Unconventional Nano-patterning. Peilin Chen

Transcription

1 Unconventional Nano-patterning Peilin Chen

2 Reference

3 Outlines History of patterning Traditional Nano-patterning Unconventional Nano-patterning

4 Ancient Patterning "This is the Elks' land". A greeting at the mouth of Dalbergsaa, Southern Dal. It seems that the carvings of Northern Scandinavia's including Kola Peninsula are the oldest. Large figures of ritual animals characterise the Mesolithic period mostly before c.4200 BC

5 Evolution of Writing Around 4000 BC Man scratches the surface of moist clay tablet with a bronze or bone tool. Around 3000 BC The Egyptians developed a form of writing on papyrus scrolls scribes used thin reed brushes or reed pens BC The Romans have been developing form of writing, that they scribed into thin sheets of wax using metal stylus.

6 Writing by Inks Writing Brush ~2000 Ys Quill Pen ~1000 Ys

7 Chinese Replication and 1048

8 Western Replication

9 Building a computer

10 First Integrated Circuit "What we didn't realize then was that the integrated circuit would reduce the cost of electronic functions by a factor of a million to one, nothing had ever done that for anything before" - Jack Kilby 2000 Nobel Prize 1958 Texas Instruments

11 Moore s Law

12 Tool Cost

13

14 Methods of Photolithography

15 Photolithography Process

16 Photolithography Process

17 Limit of Photolithography r = 1.22 x λ/(2 x N.A.) N.A. = n x sin(θ)

18 Diffraction Limit Resolution = K x λ/(n.a.) Depth of Focus = λ/(n.a.) 2 K = 0.61

19 Photolithography

20 Water Immersion Lithography Resolution (R) = K x λ/(n.a.) K = 0.25, NA ~1.4, λ = 193 R = 35 nm Air n= Water n = 1.437

21 Electron Microscope

22 TEM Image

23 E-Beam Lithography

24 E-beam Writer Better than 10 nm lines over 4 inch wafer

25 E-beam Writer 理

26 E-beam Projection

27 EUV System

28 Next Generation Lithographic Techniques

29 Nanoimprint Lithography Mold PMMA Substrate Imprint Remove Mold RIE Evaporation Lift-off

30 Step and Flash Imprint Lithography

31 NX-2000, Nanoimprintor, Nanonex Nanoimprintors

32 Imprinting Result

33 Challenges Mask Fabrication (1:1) Lift-off process Resist Mask Design

34

35 Writing

36 Writing Principles

37 Introduction To Scanning Probe Microscopy

38 Scanning Tunneling Microscopy

39 Polymer Gold atom

40 Atomic Force Microscopy

41

42 E Coli Protein Nanotubes DNA

43 Scanning Probe Family

44 STM Lithography Resist: Thiol

45 STM Lithography

46 Oxidation Lithography

47 AFM Lithography

48 Substitution Lithography

49 Dip-Pen Lithography

50

51 Dip-Pen Lithography

52 Dip-Pen Lithography

53 Dip-pen Lithography

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59 Dip-Pen Array

60 Ultimate STM Lithography

61 Single Atomic Manipulation

62 Single Molecular Vibrational Spectra by STM

63 Building Molecule Step by Step

64 Atomic Manipulation

65 Laser Writing

66 Laser Writing A chip integrating PCR and solid phase extraction A 48-channel CE chip

67 Two Photon Writing

68 Two Photon Writing

69 Two Photon Writing

70

71 DNA Nanosphere Sperm

72 Near-Field Lithography

73 Near-Field Lithography

74 Direct Writing 3D

75 Direct Writing

76 Direct Writing

77 Direct Writing

78 Inkjet Printer

79 Inkjet Printing

80 Inkjet Printing

81 Inkjet Printing

82 Inkjet Printing

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87 Self-Assembled Pattern

88 Self-Assembly of Block-Copolymer

89 Possible phase separated morphologies in PD-PS block copolymer systems.

90 Block Copolymer as Nano-Materials

91 Block Copolymer as Nano-Materials

92 Block Copolymer as Templates

93 Block Copolymer as Templates

94 Block Copolymer as Templates

95 Self-Assembly of Block-Copolymer

96 Self-Assembly of Block-Copolymer

97 1926 Goldschmidt proposed atoms could be considered as packing in solids as hard spheres

98 A single layer of spheres is closestpacked with a HEXAGONAL coordination of each sphere

99 TWO different types of HOLES (so-called INTERSTITIAL sites) OCTAHEDRAL (O) holes with 6 nearest sphere neighbors TETRAHEDRAL (T ) holes with 4 nearest sphere neighbors

100 The third layer lies in indentations directly in line (eclipsed) with the 1st layer Layer ordering may be described as ABA The third layer lies in the alternative indentations leaving it staggered with respect to both previous layers Layer ordering may be described as ABC

101 Features of Close-Packing Coordination Number = 12 74% of space is occupied 2 atoms in the unit cell (0, 0, 0) (2/3, 1 /3, 1 /2) 4 atoms in the unit cell l (0, 0, 0) (0, 1 /2, 1 /2) (1 /2, 0, 1 /2) (1 /2, 1 /2, 0)

102 74% of space is occupied

103 NON-CLOSE-PACKED structure 68% of space is occupied 8 Nearest Neighbours at 0.87a 6 Next-Nearest Neighbours at 1a

104 Packing Fraction FCC : 0.74 BCC: 0.68 SC : 0.52 Diamond: 0.34

105 Nanosphere

106 Driving Force

107 Phase Diagram

108 Nanosphere Lithography Single layer Metal deposition Lift-off Double layer Metal deposition Lift-off

109 D r r D r 3 1 = D a = D r = D a = Array Dimension Array Dimension ~1/4 D ~1/7 D

110 Optical Image of PS Template 800 nm PS

111 Nanosphere Lithography 350 nm 550 nm 400 nm 880 nm

112 Single Layer Templates 200 nm 280 nm 550 nm

113 Double Layer Templates 200 nm 400 nm 550 nm

114 Anodic Alumina

115 Ordered Anodic Alumina

116 Ordered Anodic Alumina

117 AAO Templates V 50 V Distance (nm) Y = * V Voltage (V) 40 V 60 V

118 Nano-Barcodes

119 Nano-Barcodes