可延展柔性无机电子互连结构及其力学特性林骅, 潘开林, 陈仁章, 韦娜

Transcription

1 可延展柔性无机电子互连结构及其力学特性林骅, 潘开林, 陈仁章, 韦娜 ( 桂林电子科技大学机电工程学院, 广西桂林 ) 摘要 : 首先简要介绍了目前实现可延展柔性无机电子延展性的主要原理及方式, 分析了目前存在的问题 ; 其次, 总结了目前提高可延展柔性无机电子延展性能的主要设计, 并对可延展柔性无机电子互连结构的力学特性发展现状进行了分析 其中重点探讨了目前存在的互连导线失效 异质界面的力学及其可靠性问题的研究现状 ; 最后, 针对目前可延展柔性无机互连结构存在的界面可靠性问题, 介绍了本课题组在该方面的数值仿真工作 主要分析了可延展电子典型互连结构单元 马蹄形 Z 字形结构基底应力集中问题, 并进行了上述结构界面剥离的仿真分析 关键词 : 可延展电子互连 ; 结构设计 ; 力学特性 ; 界面可靠性 ; 有限元分析中图分类号 :TN 文献标识码 :A 文章编号 : (2015) Inorganic Stretchable, Flexible Electronic Interconnect Structure and Its Mechanical Properties Lin Hua, Pan Kailin, Chen Renzhang, Wei Na (Electromechanical Engineering College, Guilin University of Electronic Technology, Guilin , China) Abstract:Firstly, the main mechanism and way of inorganic stretchable and flexible electronics to realize elasticity are brief introduced. The existing problems are analyzed. Then, the designs for increasing elasticity of inorganic stretchable and flexible electronics are summarized, and the recent advances of its mechanical property are analyzed. The research statuses of the interconnect failure, heterogeneous interface mechanics and reliability are mainly discussed. Finally, for the interfacial reliability of inorganic stretchable and flexible interconnects, the numerical simulation on the issue of the research group is introduced. The substrate stress concentration phenomena of the typical stretchable interconnect units, such as the horseshoe shape structure and the zigzag shape structure are mainly analyzed, and the simulation analyses of the interfacial delamination of above structures are presented. Key words:stretchable interconnect; structural design; mechanical property; interfacial reliability; finite element analysis DOI: /j.cnki.wndz EEACC:2550F

2 CdxZn1-xSeyS1-y 量子点量子阱及有机 - 无机 LED 李彦沛, 刘孔, 卢树弟, 寇艳蕾, 岳世忠 ( 中国科学院半导体研究所半导体材料科学重点实验室, 北京 ) 摘要 : 为了提高无机纳米发光材料的发光效率和有机 - 无机杂化电致发光器件的性能, 使用有机金属前驱体法, 制备了具有化学组分梯度的 ZnCdS/CdxZn1-xSeyS1-y 量子点量子阱材料以及 CdxZn1-xSeyS1-y 量子点材料 观察到相同反应温度与反应物配比所制得的 ZnCdS/CdxZn1-xSeyS1-y 光致发光峰相较于 CdxZn1-xSeyS1-y 出现明显的蓝移, 且荧光量子效率有一定的提高, 最高可达 60 6% 通过在反应过程中调节 Se 与 S 的比例, 观察到了反应产物的光致发光峰随 Se 比例的减少而逐渐蓝移 结果表明, 与使用纯无机纳米材料作为有源层的器件相比, 使用量子点量子阱材料制备的有机 - 无机杂化 LED 的电流效率提高了 4 3 倍 关键词 : 量子点量子阱 (QDQW); 发光材料 ; 有机 - 无机杂化 ; 有源层 ; 电致发光中图分类号 :O471.1;TN312 8 文献标识码 :A 文章编号 : (2015) ZnCdS/CdxZn1-xSeyS1-y Quantum Dot Quantum Well and Organic Inorganic LEDs Li Yanpei, Liu Kong, Lu Shudi, Kou Yanlei,Yue Shizhong (Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors, Chinese Academy of Sciences, Beijing , China) Abstract:In order to improve the luminous efficiencies of inorganic nano materials and the performances of organic inorganic hybrid electroluminescent devices,the ZnCdS/CdxZn1-xSeyS1-y quantum dot quantum well material and CdxZn1-xSeyS1-y quantum dot material with chemical composition gradient were prepared by the organic metal precursor method.the photoluminescence peak of ZnCdS/CdxZn1-xSeyS1-y prepared under the same reaction temperature and reactant proportion appears significant blue shift compared with that of CdxZn1-xSeyS1-y. The fluorescence quantum efficiency of ZnCdS/CdxZn1-xSeyS1-y has a certain improvement, and the maximum value reaches 60 6%. By adjusting the proportions of Se and S in the reaction process,the obvious blue shift of the photoluminescence peak for the reaction product with the decline of Se proportion was observed.the result shows that compared with the device fabricated with inorganic active layers, the current efficiency of the organic inorganic hybrid LED fabricated by using the quantum dot quantum well material increases 4 3 times. Key words:quantum dot quantum well(qdqw);luminescent material; organic inorganic hybrid; active layer; electroluminescence DOI: /j.cnki.wndz EEACC:2530C;4260D

3 Mn2+ 掺杂 CdS 量子点敏化太阳电池的性能吕其坤, 顾修全 ( 中国矿业大学材料科学与工程学院, 江苏徐州 ) 摘要 : 采用连续式离子层吸附与反应 (SILAR) 法不仅成功制备出 CdS 量子点敏化的 TiO2 纳米晶光阳极, 而且实现了 Mn2+ 在 CdS 量子点晶格内部的可控掺杂 应用场发射扫描电子显微镜 (FESEM) 对电极的形貌进行了分析和表征 继而通过组装光伏电池研究 Mn2+ 掺杂浓度与电池性能之间的关系 通过测量其紫外 - 可见吸收光谱及电流密度 - 电压 (J V) 特性曲线考察电池性能随 Mn2+ 掺杂量的变化规律 在研究中发现, 掺杂适量的 Mn2+ 有助于提高 CdS/TiO2 光阳极对可见光的吸收, 进而增强太阳电池的能量转换效率 当 Mn2+ 浓度为 mmol/l 时, 量子点敏化太阳电池 (QDSSC) 的能量转换效率可达 2 85%, 较未掺杂的光阳极试样性能提高约 50% 关键词 :CdS; 量子点 ; 量子点敏化太阳电池 (QDSSC); Mn 离子 ; 太阳电池中图分类号 :TM914.4 文献标识码 :A 文章编号 : (2015) Properties of Mn2+ Doped CdS Quantum Dot Sensitized Solar Cells LüQikun, Gu Xiuquan (School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou , China) Abstract:The CdS quantum dot (QD) sensitized TiO2 nanoparticle photoanodes were fabricated by the successive ionic layer adsorption and reaction (SILAR) method, and the controllable doping of Mn2+ in the lattice of CdS QDs was realized. The morphologies of the electrodes were analyzed and characterized by field emission scanning electron microscopy (FESEM). Further, the solar cells were assembled to investigate the relationship between Mn2+ doped concentration and solar cell performances. The change law of the solar cell performances with the amount of Mn2+ doping was discussed by the ultraviolet visible (UV VIS) spectra and J V characteristic curve. It is found that the moderate Mn2+ doping facilitates enhancing the visible light absorbance of CdS/TiO2 photoanodes and improving the energy conversion efficiency of the solar cell. When the Mn2+ concentration is mmol/l, the energy conversion efficiency of the quantum dot sensitized solar cell(qdssc) reaches 2 85%,corresponding to an increase by about 50% compared with that of the undoped photoanodes of the QDSSC. Key words:cds; quantum dot; quantum dot sensitized solar cell (QDSSC); Mn ion; solar cell DOI: /j.cnki.wndz EEACC:8420

4 模板法制备三维有序氧化钛薄膜的结构调控王韬 1, 陈杨 2,3b, 陈志刚 1,3a,3b (1. 江苏大学材料科学与工程学院, 江苏镇江 ;2. 常州大学材料科学与工程学院, 江苏常州 ;3. 苏州科技学院 a. 化学生物与材料工程学院 ;b. 江苏省环境功能材料重点实验室, 江苏苏州 ) 摘要 : 以聚苯乙烯微球胶体晶体为硬模板 四氯化钛为氧化钛前驱体, 结合控制浸渍 - 煅烧工艺制备了三维有序 TiO2 薄膜材料, 重点考察了浸渍液中 TiCl4 的浓度对最终 TiO2 薄膜样品结构的影响 利用 X 射线衍射 (XRD) 热重分析(TGA) 扫描电子显微镜(SEM) 能谱仪 (EDS) 透射电子显微镜(TEM) 选区电子衍射(SAED) 和 N2 吸附 / 脱附等手段对样品的结构特征进行表征 XRD 分析表明, 经 500 煅烧 2 h 后所得样品为锐钛矿相 TiO2; SEM 结果显示, 在本实验条件下随着前驱体溶液中 TiCl4 浓度的增大,TiO2 薄膜的微观结构逐步由三维有序大孔 TiO2(three dimensional ordered macro porous TiO2, 3DOM TiO2) 演变为三维有序 TiO2 中空球 (three dimensional ordered TiO2 hollow spheres, 3DOH TiO2);TEM 结果表明,3DOM TiO2 和 3DOH TiO2 薄膜样品骨架由氧化钛纳米颗粒组成, 大孔孔壁和中空球壳壁上存在由 TiO2 纳米颗粒堆积形成的不规则介孔 关键词 : 胶体晶体模板 ; 氧化钛 ; 大孔 ; 中空球 ; 有序结构中图分类号 :TB383 文献标识码 :A 文章编号 : (2015) Structurally Tailored Three Dimensional Ordered TiO2 Films Fabricated by the Template Method Wang Tao1, Chen Yang2,3b, Chen Zhigang1,3a,3b (1.School of Materials Science and Engineering, Jiangsu University, Zhenjiang , China; 2.School of Materials Science and Engineering, Changzhou University, Changzhou , China; 3.a.School of Chemistry Biology and Material Engineering; b.jiangsu Key Laboratory for Environment Functional Materials, Suzhou University of Science and Technology, Suzhou , China) Abstract:With the polystyrene microspheres colloidal crystals as the hard templates and titanium tetrachloride as the TiO2 precursor, the three dimensional ordered TiO2 films were synthesized by the controlled dipping calcination method. The effects of the TiCl4 concentrations in the precursor solution on the structures of the obtained TiO2 films were mainly investigated. The structure characteristics of the samples were characterized by X ray diffraction (XRD), thermogravimetric analysis (TGA), scanning electron microscopy (SEM), electron energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), selected area electron diffraction (SAED) and nitrogen adsorption desorption techniques. The XRD results show that the obtained samples are anatase TiO2 after calcination at 500 for 2 h. The SEM results indicate that with the increase of the TiCl4 concentrations in the precursor solution, the microstructures of the TiO2 films are transformed from three dimensional ordered macro porous TiO2 (3DOM TiO2) to three dimensional ordered TiO2 hollow spheres (3DOH TiO2). The TEM results show that the frameworks of the 3DOM TiO2 and 3DOH TiO2 films are composed of TiO2 nanoparticles, and there are the irregular mesoporous composed by TiO2 nanoparticles on the walls of the macropores and the shells of the hollow spheres. Key words:colloidal crystal template;tio2;macropore;hollow sphere;ordered structure DOI: /j.cnki.wndz PACC:6146

5 金属成分对固态硫化 CZTS 薄膜性能的影响曹中明, 杨元政, 许佳雄, 谢致薇 ( 广东工业大学材料与能源学院, 广州 ) 摘要 : 采用磁控溅射法制备铜锌锡 (CZT) 金属预制膜, 再利用固态硫化法制备了 Cu2ZnSnS4 (CZTS) 薄膜 研究了 CZT 金属预制膜中 Sn 的原子数分数对 CZTS 薄膜的化学成分 结构组织和光学性能的影响规律 结果表明 : 实验制备的 CZT 金属预制膜硫化后均能得到主相为 CZTS 的薄膜 在适当的范围内增加 CZT 金属预制膜中 Sn 的原子数分数可提高 CZTS 薄膜的结晶度, 有利于生长均匀致密的 CZTS 薄膜 ;Sn 的原子数分数过高时, 硫化后制得的 CZTS 薄膜存在杂相 Sn2S3 当 CZT 预制膜中各成分的原子数分数比为 yzn/ysn=0 24, ycu/yzn+sn=0 33 时, 固态硫化后可获得表面均匀致密 具单相的 CZTS 薄膜, 该薄膜中 yzn/ysn=1 15, ycu/yzn+sn=0 92, 光吸收系数达 104 cm-1, 光学带隙为 1 52 ev 关键词 : 金属预制膜 ; 固态硫化 ; 磁控溅射 ;Cu2ZnSnS4 (CZTS) 薄膜 ; 金属含量中图分类号 :TB332;TM615 文献标识码 :A 文章编号 : (2015) Effect of the Metallic Compositions on the Properties of the CZTS Thin Films Prepared by Solid State Sulfurization Cao Zhongming, Yang Yuanzheng, Xu Jiaxiong, Xie Zhiwei (School of Materials and Energy, Guangdong University of Technology, Guangzhou , China) Abstract:The Cu Zn Sn (CZT) metallic precursors were prepared by the magnetron sputtering method, then the Cu2ZnSnS4 (CZTS) thin films were prepared by the solid state sulfurization method. The effect rules of the atomicity fraction of Sn in the CZT metallic precursors on the chemical composition, structure and optical properties of the CZTS thin films were investigated. The results show that the CZTS thin films can be obtained through the sulfurized CZT metallic precursors prepared by the experiment. The increase of the suitable atomicity fraction of Sn in the CZT metallic precursors can improve the crystallinity of the CZTS thin films and make the CZTS thin films more uniform and compact. The excessive high atomicity fraction of Sn leads to the presence of Sn2S3 phase in sulfurized CZTS thin films. When the atomicity fraction ratios of yzn/ysn and ycu/yzn+sn in CZT precursors are 0 24 and 0 33 respectively, the sulfurized CZTS thin film is uniform and single phase. The ratios of yzn/ysn and ycu/yzn+sn are 1 15 and 0 92 respectively, the optical absorption coefficient is 104 cm-1 and optical band gap is 1 52 ev. Key words:metallic precursor; solid state sulfurization; magnetron sputtering; Cu2ZnSnS4 (CZTS) thin film; metal content DOI: /j.cnki.wndz EEACC:2520M

6 基于行波介电泳的细菌分离电极的设计与操控冯奇亮 1, 连崑 2, 唐晓亮 1, 桑胜波 1 (1. 太原理工大学信息工程学院微纳系统研究中心新型传感器和智能控制系统重点实验室 ( 教育部 ), 太原 ;2. 路易斯安那州立大学先进微结构和器件中心,LA 美国 ) 摘要 : 基于行波介电泳原理, 分析了电场强度和 Clausius Mossoti (C M) 因子的虚部对行波介电泳力的影响 对 4 种不同形状电极的电场强度分布进行了仿真建模, 结果表明半圆形电极阵列有较好的传输特性, 并建立了半圆形电极阵列在行波作用下的电场模型 以行波介电泳力的复数表达式为基础, 得出了 C M 因子虚部随频率的变化曲线 设计加工了基于半圆形电极阵列的细胞分离微流体芯片, 基于行波介电泳原理, 对金黄色葡萄球菌细菌进行了分离实验 通过对比分析, 实验结果与仿真结果具有较好的一致性 因此, 利用行波介电泳力, 半圆形电极阵列能够有效地对细菌进行传输分离 关键词 : 生物芯片 ; 微流体 ; 行波介电泳 ; 连续流 ; 传输分离中图分类号 :O35;R318 文献标识码 :A 文章编号 : (2015) Design and Manipulation of the Bacteria Separation Electrode Based on the Travelling Wave Dielectrophoresis Feng Qiliang1, Lian Kun2, Tang Xiaoliang1, Sang Shengbo1 (1.Key Lab of Advanced Transducers and Intelligent Control System (Ministry of Education), Micro and Nano System Research Center, College of Information Engineering, Taiyuan University of Technology, Taiyuan , China; 2. Center for Advanced Microstructures and Devices, Louisiana State University, LA 70809,USA) Abstract:The effects of the electric field strength and the imaginary part of Clausius Mossoti (C M) factor on the travelling wave dielectrophoresis force were analyzed based on the principle of the travelling wave dielectrophoresis. The electric field strength distributions for the electrodes with four different shapes were simulated and modeled. The results show that the semicircle electrodes array has better transmission performances. The electric filed model of the semicircle electrodes array was built under the effect of the travelling wave. According to the plural expressions of the travelling wave dielectrophoresis force, the change curve of the imaginary part of C M factor with the frequency was obtained. The microfluidic chip for cell separation was designed and fabricated based on the semicircle electrode array. Based on the theory of travelling wave dielectrophoresis, the separation experiment of staphylococcus aureus was carried out. The experiment results are well consistent with the simulation results through the comparative analysis. Therefore, the semicircle electrode array can efficiently transport and separate the bacteria by using the travelling wave dielectrophoresis force. Key words:biochip; microfluidics; travelling wave dielectrophoresis; continuous flow; transport separation DOI: /j.cnki.wndz PACC:0340G; 0710C

7 低功耗芯片级原子钟物理系统热分析 朱启发 1, 韩军 1, 王逸群 2, 张宝顺 2, 郭立建 1 (1. 北京工业大学电子信息与控制工程学院, 北京 ; 2. 中国科学院苏州纳米技术与纳米仿生研究所纳米加工平台, 江苏苏州 ) 摘要 : 对一种基于玻璃隔热桥结构芯片级原子钟物理系统进行了热学分析 通过理论方法对 真空下无封装外壳物理系统各个导热路径进行了分析, 同时用有限元方法分析了镀金涂层对 其功耗的影响, 并且进行了实验验证 实验表明 : 无封装外壳情况下, 在工作区部分外表面 镀金涂层可以使物理系统总功耗从 93 6 mw 降低到 72 4 mw, 实验值与有限元仿真结 果一致 最后对真空下有封装外壳物理系统进行了有限元仿真, 仿真结果表明 : 给工作区部 分外表面镀金涂层物理系统盖上封装外壳, 可以使物理系统总功耗降低至 57 2 mw, 在 基座和封装外壳内表面都镀上金涂层可以使物理系统总功耗进一步降低至 34 8 mw 关键词 : 原子钟 ; 物理系统 ; 微机电系统 (MEMS); 有限元方法 ; 低功耗 ; 金涂层 ; 热分 析 中图分类号 :TN303 文献标识码 :A 文章编号 : (2015) Thermal Analysis of the Low Power Consumption Physics Package for a Chip Scale Atomic Clock Zhu Qifa1, Han Jun1, Wang Yiqun2, Zhang Baoshun2, Guo Lijian1 (1.School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing , China; 2.Nano Processing Platform, Suzhou Institute of Nano Tech and Nano Bionics, Chinese Academy of Sciences, Suzhou , China) Abstract:The thermal analysis was made for the physics package of the chip scale atomic clockbased on the glass insulating bridge structure. The each thermal path of the physics package without the package enclosure in vacuum environment was analyzed by theory method, at the same time the influence of a gold coating on its power consumption was analyzed by the finite element method, and the experimental verification was carried out. The experimental results show that a gold coating placed on the part surface of workspace can reduce the total power consumption of physics package from 93 6 mw to 72 4 mw without the package enclosure, and the experimental results are in agreement with the finite element simulation results. Finally, the phy sics package with package enclosure in vacuum environment was simulated by the finite element method. The simulation results show that covering package enclosure on the physics package with the part surface of workspace placed a gold coating can reduce the total power consumption of the physics package to 57 2 mw, and the gold coating on the inner surface of the substrate and package enclosure can further reduce the total power consumption of the physics package to 34 8 mw. Key words:atomic clock;physics package;micro electromechanical system(mems);finite element method;low power consumption;gold coating;thermal analysis DOI: /j.cnki.wndz EEACC:2560Z;2575D

8 基于 SOI 薄膜的硅压敏电阻变化率计算方法李丹丹 a,b, 梁庭 a,b, 李赛男 a,b, 姚宗 a,b, 洪应平 a,b, 齐蕾 a,b, 杨帆 a,b, 熊继军 a,b ( 中北大学 a. 电子测试技术重点实验室 ;b. 仪器科学与动态测试教育部重点实验室, 太原 ) 摘要 : 用小挠度方形膜作为理论模型, 提出了一种基于绝缘体上硅 (SOI) 敏感薄膜的硅压敏电阻变化率新型积分计算方法 针对传统中心点计算方法的不足, 通过整个平面积分的方法计算电阻变化率, 并计算出输出电压和外部气压的关系表达式, 与传统中心点计算方法进行比较 ; 同时, 利用仿真的方法算出灵敏度, 并将计算的理论值与实验值进行比较 实验结果表明, 外界温度不变, 当输入电压为 5 V 单个压敏电阻值为 4 5 kω 时, 敏感芯片的灵敏度为 mv/pa 该灵敏度值相比传统中心点法和仿真计算方法, 与采用新型积分计算方法的计算值更接近 关键词 : 压敏电阻 ; 压力传感器 ; 平面积分 ; 敏感薄膜 ; 灵敏度中图分类号 :TN302 文献标识码 :A 文章编号 : (2015) A Method of Calculating the Changing Rate of the Silicon Piezoresistance Based on SOI Films Li Dandana,b,Liang Tinga,b,Li Sainana,b,Yao Zonga,b,Hong Yingpinga,b, Qi Leia,b, Yang Fana,b,Xiong Jijuna,b (a.science and Technology on Electronic Test and Measurement Laboratory; b.key Laboratory of Instrumentation Science and Dynamic Measurement of Ministry of Education,North University of China,Taiyuan ,China) Abstract:With the small deflection square film as the theoretical model, a novel integral calculation method based on the micro structure surface of silicon on insulator (SOI) sensitive films was proposed to calculate the changing rate of the silicon piezoresistance.aiming at the shortage of the traditional center point calculation method, the changing rate of piezoresistance was calculated by the method of the whole plane integral, and the relationship expression of the output voltage and the external air pressure was calculated, then compared with the traditional center point calculation method. Meanwhile,the sensitivity was calculated by the simulation method, and then the theoretical values were compared with the experimental values.the experiment result shows that when the input voltage is 5 V and a single piezoresistor value is 4 5 kω with the constant outside temperature, the sensitivity of the sensitive chip is mv/pa.compared with the traditional central point method and simulation calculation method, the sensitivity value is closer to the value by using the new integral calculation method. Key words:piezoresistance; pressure sensor; plane integral; sensitive film; sensitivity DOI: /j.cnki.wndz EEACC:0585

9 基于 (111) 硅单片集成三轴加速度计的工艺研究赵忆, 王家畴, 陈方, 李昕欣 ( 中国科学院上海微系统与信息技术研究所传感技术联合国家重点实验室, 上海 ) 摘要 : 介绍了一种新型单片集成电容式三轴微加速度计的加工方法, 该方法采用非绝缘体上硅 (SOI) 的单硅片单面加工技术, 易于与 IC 工艺兼容, 而且成本低廉, 成品率高, 适用于批量生产, 可替代传统的 SOI 工艺 该方法主要利用硅深度反应离子刻蚀 (DRIE) 技术结合普通 (111) 单晶硅片内部可选择性横向自停止腐蚀技术制作并释放得到悬浮可动的敏感结构 此外, 创新的锚点设计不仅使检测电极之间相互电学隔离, 而且便于引线键合与封装 最后基于开环接口电路对加工制造的三轴加速度计进行了测试, 验证了该工艺的可行性 关键词 : 微机电系统 (MEMS);(111) 硅 ; 单硅片单面加工 ; 三轴加速度计 ; 单片集成中图分类号 :TH703;TH824.4 文献标识码 :A 文章编号 : (2015) Study on Monolithic Integration Technique of 3 Axis Accelerometers Based on (111) Silicon Wafer Zhao Yi, Wang Jiachou, Chen Fang, Li Xinxin (State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai , China) Abstract:A novel processing method for the monolithic integration of 3 axis capacitive accele rometers was introduced, and the single wafer based single sided micromachining technology without silicon on insulator (SOI) was used in the method. The advantages of the method are compatible with IC, low lost, high yield, suitable for mass production and can replace the traditional SOI technology. The silicon deep reactive ion etching (DRIE) technology combined with the (111) silicon wafer inside selective transverse self stop wet etching technology was mainly used to fabricate and release the movably sensitive structure in the method. In addition, the novel anchor structure was designed to make the detection electrodes electrically isolated from each other and the bonding and packaging more convenient. Finally, the fabricated 3 axis accelerometer was tested based on the open loop interface circuit, and the feasibility of the novel technology was verified. Key words:micro electromechanical systems (MEMS); (111) silicon; single wafer based single sided micromachining; 3 axis accelerometer; monolithic integration DOI: /j.cnki.wndz EEACC:2575F

10 沉淀法制备炭载纳米氧化镧催化剂及其性能薛越, 李新梅 ( 新疆大学机械工程学院, 乌鲁木齐 ) 摘要 : 通过沉淀法, 以炭黑为载体 氯化镧和四甲基氢氧化铵 (TMAH) 为原料制备了炭载纳米氧化镧催化剂 采用扫描电镜 (SEM) 和 X 射线衍射 (XRD) 对所获产物的组织结构进行表征, 采用循环伏安法和旋转圆盘测试对产物的催化活性进行研究 结果表明 : 当纳米 La2O3 微粒负载到炭黑上时, 沉淀剂 ( 四甲基氢氧化铵 ) 的加入量和热处理温度都会对其组织结构产生影响 当沉淀剂用量为 6 mmol, 热处理温度为 750 时可以得到粒径小 分散性好的氧化镧粒子, 其平均粒径约为 20 nm 电化学测试确定了该催化剂对氧气还原反应的催化活性, 并得出氧气还原反应是以二电子和四电子反应共同进行的 关键词 : 沉淀法 ; 纳米氧化镧 ; 组织结构 ; 催化活性 ; 电化学 ; 氧气还原反应中图分类号 :TB383 文献标识码 :A 文章编号 : (2015) Carbon Supported Nano Sized Lanthanum Oxide Catalyst Prepared by the Precipitation Method and Its Properties Xue Yue, Li Xinmei (College of Mechanical Engineering, Xinjiang University, Urumqi , China) Abstract:The nano sized lanthanum oxide catalyst was prepared with LaCl3 and tetramethylammonium hydroxide (TMAH) as the raw materials and carbon as the carrier by the precipitation method. The organizational structure of the obtained product was characterized by scanning electron microscope (SEM) and X ray diffraction (XRD), and the catalytic activity of the product was studied by cyclic voltammetry and rotating disk test. The results show that when the nano sized lanthanum oxide particles are loaded onto the carbon, the amount of precipitant (TMAH) and heat treatment temperatures can affect the organizational structure. When the precipitant dose and heat treatment temperature are 6 mmol and 750, respectively, the La2O3 particles with small diameter and good dispersion can be obtained, and the average diameter is about 20 nm. The electrochemical test confirms the catalytic activity of the catalyst for the oxygen reduction reaction and proves that oxygen reduction reaction is carried out with two electrons and four electrons jointly. Key words:precipitation method; nano sized lanthanum oxide; organizational structure; catalytic activity; electrochemistry; oxygen reduction reaction DOI: /j.cnki.wndz PACC:6146

11 硅 - 硅直接键合后硅片的机械减薄过程陈晨, 杨洪星, 何远东 ( 中国电子科技集团公司第四十六研究所, 天津 ) 摘要 : 硅 - 硅直接键合硅片的机械减薄工艺对器件的性能有很大的影响 采用磨削 化学腐蚀和机械 / 化学抛光的方法对硅 - 硅直接键合硅片进行减薄加工, 分析了减薄过程中各个工序键合片的平整度 弯曲度和翘曲度变化, 并对减薄后硅片的厚度均匀性进行了考察 本次实验最终获得了几何参数良好 厚度满足要求且均匀的晶片 磨削过程会使弯曲度和翘曲度升高, 可以通过化学腐蚀的方法降低弯曲度和翘曲度, 化学腐蚀过程虽然使平整度升高, 但可以通过机械 / 化学抛光的方法降低平整度 采用该减薄技术对直接键合硅片进行机械减薄具有可行性 关键词 : 硅 - 硅直接键合 (SDB); 机械减薄 ; 平整度 ; 弯曲度 ; 翘曲度中图分类号 :TN305 文献标识码 :A 文章编号 : (2015) Mechanical Thinning Process of the Wafer After the Si Si Direct Bonding Chen Chen, Yang Hongxing, He Yuandong (The 46th Research Institute, CETC, Tianjin ,China) Abstract:Mechanical thinning technology after Si Si direct bonding wafer has a great influence on the performances of the devices. The thinning process after Si Si direct bonding wafer was completed by the methods of grinding, chemical corrosion and mechanical/chemical polishing. The geometrical parameters including flatness, bow and warp during the mechanical thinning processes were analyzed, and the thickness uniformity of the wafer after thinning process was investigated.the wafers with good geometric parameters and uniform thickness for meeting the requirements were obtained.the chemical polishing method can decrease the bow and warp even though the grinding process increases them.the flatness is increased by the chemical polishing method and improved by the mechanical/chemical polishing method. The direct bonding silicon wafer is feasible by this thinning technology. Key words:si Si direct bonding(sdb);mechanical thinning; flatness; bow; warp DOI: /j.cnki.wndz EEACC:2550