Characteristics of Active Devices

Transcription

1 007/Oct/17 1

2 haracteristics of Active Devices Review of MOSFET Physics MOS ircuit Applications Review of JT Physics MOS Noise JT Noise

3 MS/RF Technology Roadmap MS MOS 1., 1.0, 0.8µm 0.60, 0.50µm 0.45, 0.35µm 0.5, 0.18µm M013 1.V/.5V MN90 (1 ) 1.0V/.5V RF MOS M05.5V/3.3V M V/3.3V M013 1.V/.5V MN90 (1 ) 1.0V/.5V SiGe imos SG V SG /3.3V Available Technologies Left edge of each box represents risk production schedule MiM is offered for M05 and below and SiGe technologies. 3

4 Technology Landscape 00 40G SiGe imos 10G Si imos F t (GHz) DMA WLAN Si MOS 40 GSM Technology (µm) 4

5 ross Section View 5

6 Review of MOSFET Physics ross Section View & Layout Process masks N-Well, Active region, Poly gate, P/N implant D S G Substrate Well ontact S G D ontact S G D N Poly P N N N P Poly P P N Well Metal 1 ontact Silicided Poly Unsilicided Poly Field Oxide Nwell Substrate 6

7 Review of MOSFET Physics MOS Operation Regions: ut-off region V <, = 0 GS V T Linear (triode) region V GS > V Saturation region D Subthreshold region T W V DS, VDS < VGS V T D = µ n; pox ( VGS VT ) VDS L 1 W VGS > VT, VDS > VGS VT ( ) D = µ n; pox VGS VT L Overdrive voltage: V V V OV hannel - length modulation : T T GS D T ( 1 ) 0 = λv DS ( Φ V Φ ) ody effect : V = V 0 γ F S F D 7

8 Review of MOSFET Physics VDS = ( VGS VT ) D Triode region Short - channel effects Active region ncreasing V GS V GS > V T ut - off region V DS 8

9 Review of MOSFET Physics MOS parasitic capacitances: G S D L D L D ov ov P N N cb P-substrate jsb gc x l jdb x d 9

10 10 Review of MOSFET Physics Parasitic capacitance vs. Dimension ) ( D ox gc L L W = j ox D ox ox ov x W WL t 7 0. = ε ) ( Si D d cb L L W x ε d l l jdb x x W x W ) ( jdb cb jdb jdb db cb jsb cb jsb jsb sb gc gb cb gc cb gc gb ov ov gc ov gd ov gc ov gc ov gs Saturation Triode - off ut < <

11 Review of MOSFET Physics MOS small signal model G G gd D R ds R g ds S gs gmv gs ro g mb v bs S R s Dsb Rsb Rdb Ddb R d D sb db R b Low frequency model RF model 11

12 Review of MOSFET Physics Unit current gain frequency, ω T : in D Unit power gain frequency, ω max : in Z in Z in Z out Z out gnore ω T R d and R gd gm n saturation gnore and i gd R d, gs s : g m gs region R s, forward R ds, R db, current, ( ) Z r 1 jω Z gd gs ( ) jω L R b, etc.: in g gd gs ωt ω 1 gm 1 max gd rg gd out ncreasing g m gs r o, ω T W L VOV W L ω T V OV L : 1

13 Review of MOSFET Physics NMOS in Deep N-Well No body effect Need extra mask and process procedure Large area V DD Substrate ontact S G D V DD N Poly N-well P N N N-well Deep N-Well Metal 1 ontact Silicided Poly Unsilicided Poly Field Oxide Nwell Substrate 13

14 MOS ircuit Applications 14

15 MOS ircuit Applications 15

16 MOS ircuit Applications 16

17 Review of JT Physics Vertical NPN JT E E E E E P Poly N Poly N-Epi N N N-uried Layerl Metal 1 ontact P Poly NL Field Oxide Nwell Substrate 17

18 Review of JT Physics Lateral JT PNP NPN E E P N P N N P N P N N-well N-well N-well Deep N-Well Metal 1 ontact P implant NL Field Oxide Nwell Substrate 18

19 E.g. SiGe Lateral PNP JT Review of JT Physics P SiGe P type SiGe SiGe P DT N Deep N-Well N DT 19

20 JT Operation Regions Use NPN as an example: ut-off region < V E 0, = 0 Activeregion Review of JT Physics VE > 0, V > 0, = β = S exp q Transconductance g m = = kt VT Early effect = exp qv kt 1 V Saturation region V E > 0, V < 0, < β S ( qv kt ) E ( ) ( V ) E E A 0

21 Review of JT Physics reakdown region Saturation region Active region ncreasing V E V E > V E _ ON V A ut - off region V E 1

22 JT small signal model Review of JT Physics r µ r b r π π µ v π g m ro r c S r e E NPN model S

23 Review of JT Physics Unit current gain frequency, ω T : in D Unit power gain frequency, ω max : η kt x x dep ωt = ( je jc ) ( RE R ) jc q ν Dn ν sat Z out τ = 1 T τ e τ b τ π τ c π f = ω max T ωt 8π r b jc RE R r bi i R 1 in Z in Z in Z out i E Emitter ase ollecter x x dep i 3

24 4 Review of JT Physics (nm) ) m ( 60 (nm) ) m (ff/ ) m (ff/ (nm) Assumptions : (GHz) / ) ( Si SiGe GaAs total SL JE E T E E t E X R X W f V R µ µ µ τ τ τ τ Ω in ps. are constants time All is is (GaAs,SiGe) to is (Si) 4 to is sat sat p JE E SL n n n D X V X V W D W D W D W τ τ τ τ f T of GanP/GaAs HT, SiGe HT and Si JT

25 Review of JT Physics Scaling of Si/SiGe HTs with ase Thickness f T is dramatically affected by decreasing base width. f max is relatively unaffected by decreasing W. Koenig,

26 Review of JT Physics Si vs. SiGe 6

27 Review of JT Physics Process Scaling Vertical scaling Lateral scaling Single poly E E N N Nwell P N N Single poly self-aligned N-uried Layerl E P Poly N Poly N-Epi N N Double poly N-uried Layerl 7

28 Review of JT Physics Similarity between JT and MOS process 8

29 Review of JT Physics Evolution of imos process 9

30 Noise Noise: Any random interference unrelated to the wanted signal Statistic results (Mean square) v n = v n Total power = (individual noise power) v n,1 v n,1 R L vn, RL Uncorrelated v n, R L P n, 1 = v n,1 R L P v n, n, = P n, 1 = Pn,1 Pn, RL 30

31 Noise Device Noises V n = 4kTR f n = 4kT gm, q, 3 n = Figure.6 (a) Thermal and (b) shot noise in devices. White noise source Pnoise flicker noise olored noise source P noise f (in Hz) V K WL 1 f, n = ox f (in Hz) 31

32 MOS Noise 3

33 MOS Noise 33

34 MOS Noise 34

35 MOS Noise 35

36 MOS Noise 36

37 JT Noise 37

38 JT Noise 38

39 JT Noise 39

40 JT Noise 40

41 41 Latch-up Semiconductor active devices have many parasitic structures, with excessive current flows between the power supply and GND. P1 P P N1 N1 N E E 1 = 1 = ( 1 ) α ( ) α ) (1 ) ( O O E E E = = = α α O O E = = α α 1 ) when (, ) ( 1 ) ( = = = = = α α α α α α O O O O urrent relation

42 Latch-up condition Latch-up 1. pnpn structure. connection from VDD to GND 3. α 1 α = 1 Latch-up Prevention Epitaxial Substrate Retrograde Well Deep Trench solation SO Guard Rings 4