Contents Part I Concepts 1 The History of Heterostructure Lasers 2 Stress-Engineered Quantum Dots: Nature s Way

Transcription

1 Contents Part I Concepts 1 The History of Heterostructure Lasers Zhores I. Alferov Introduction The DHS Concept and Its Application for Semiconductor Lasers Quantum Dot Heterostructure Lasers Future Trends References Stress-Engineered Quantum Dots: Nature s Way Anupam Madhukar Introduction Corrugated Surface Stress and Lattice-Matched Growth: Surface Mechano-Chemistry Lattice-Mismatch Stress and Growth Front Morphology Evolution Island Induced Stress Evolution in Capping Layers Stress-Driven Vertically Self-Organized Growth Stress-Directed Spatially Selective Quantum Dot Arrays Conclusion References Part II Physics 3 Characterization of Structure and Composition of Quantum Dots by Transmission Electron Microscopy Kurt Scheerschmidt, Peter Werner Introduction TEM Investigations of Quantum Dots Structure Investigations of Quantum Dots Conclusion and Outlook References... 94

2 VIII Contents 4 Scanning Tunneling Microscopy Characterization of InAs Nanostructures Formed on GaAs(001) Shigehiko Hasegawa, Hisao Nakashima Introduction Experimental Technique InAs Growth on GaAs(001) by MBE Post-Growth Annealing Effect on InAs Nanostructures Summary References Cross-sectional Scanning Tunneling Microscopy at InAs Quantum Dots Mario Dähne, Holger Eisele Introduction Contrast Mechanisms in XSTM Experiments Methods Results Discussion Summary and Outlook References X-ray Characterization of Group III-Nitrides (Al,In,Ga)N Alois Krost Introduction Crystal Structure and Mosaicity High-Resolution X-ray Diffraction Biaxial Strain Stress Relationship Experimental Results Conclusions References Theory of the Electronic and Optical Properties of InGaAs/GaAs Quantum Dots Oliver Stier Introduction General Properties of Confined States in Quantum Dots Strain in Buried Quantum Dot Structures Piezoelectric Symmetry Reduction Confined Single-Particle States Dipole Transitions Between Zero-Dimensional States Few-body Effects in the Strong Confinement Regime Quantum-Confined Stark Effect Shape Variation Effects

3 Contents IX 7.10 Reliability of State-of-the-Art Calculations Conclusions References Magneto-Tunneling Spectroscopy of Self-Assembled InAs Dots Laurence Eaves, Amalia Patanè, Peter C. Main Introduction Tunneling Diodes Incorporating Self-assembled Quantum Dots Magneto-tunneling Spectroscopy Prospects and Conclusions References Modulation Spectroscopy and Surface Photovoltage Spectroscopy of Semiconductor Quantum Wires and Quantum Dots Fred H. Pollak Introduction Experimental Methods Lineshape Considerations Results and Discussion Summary References Optical Properties of Self-Organized Quantum Dots Robert Heitz Introduction Investigated Samples Excited Exciton Transitions Exciton-LO-Phonon Coupling Many-Particle States Exciton Dynamics Conclusions References High Occupancy Effects and Condensation Phenomena in Semiconductor Microcavities and Bulk Semiconductors Maurice S. Skolnick, Alexander I. Tartakovskii, Raphaël Butté, R. Mark Stevenson, Jeremy J. Baumberg, David M. Whittaker Introduction Experimental Techniques for Microcavity Studies Non-Resonant Excitation Resonant Excitation

4 X Contents 11.5 Comparison of Resonant and Non-Resonant Excitation of Microcavities, Polariton Lasers and Optical Parametric Oscillators Exciton Condensates and Stimulated Scattering in Direct Gap Bulk Materials and Quantum Wells The Electron-Hole Liquid in Indirect Gap Semiconductors Summary References Part III Devices 12 Theory of Quantum Dot Lasers Marius Grundmann Introduction Basic Theory of Quantum Dot Lasers Carrier Distribution Function Threshold Current Characteristic Temperature Lasing Spectra High Frequency Modulation Inter-Sublevel Lasers Conclusion and Outlook References Long-Wavelength InGaAs/GaAs Quantum Dot Lasers Nikolai N. Ledentsov Introduction Quantum Dots Growth of Long-Wavelength GaAs-Based Quantum Dots Edge-Emitting Long-Wavelength Quantum Dot Lasers Degradation Studies Long-Wavelength Vertical-Cavity Surface-Emitting QD Lasers Conclusions References InP/GaInP Quantum Dot Lasers Oliver G. Schmidt, Yvonne M. Manz, Karl Eberl Introduction Single Layers Stacked Layers InP/InGaP Quantum Dot Lasers References

5 Contents XI 15 High Power Quantum Dot Lasers Christian Ribbat, Roman Sellin High Power Laser Diodes Quantum Dot Lasers Characteristics of Ridge Wave-Guide Quantum Dot Lasers Summary References Inter-Sublevel Transitions in Quantum Dots and Device Applications Alexander Weber Introduction Inter-Sublevel Absorption Inter-Sublevel Emission Conclusion References Progress in Growth and Physics of Nitride-Based Quantum Dots Yasuhiko Arakawa Introduction Why QDs in GaN-Based Lasers are Important Electronic States in GaN-Based QDs Growth and Optical Properties of Self-Assembling InGaN QDs Growth and Optical Properties of Self-Assembling GaN QDs Lasing Action of InGaN QD Lasers at Room Temperature Growth and Optical Properties of Selectively Grown InGaN QDs Conclusion References Ultrafast Optical Properties of Quantum Dot Amplifiers Paola Borri Introduction Carrier Dynamics in Semiconductor Optical Amplifiers Heterodyne Pump-Probe Technique Gain and Refractive Index Dynamics in In(Ga)As QD Amplifiers Dephasing Time in In(Ga)As QD Amplifiers Summary References Index

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