Mar Yunsu Sung. Yunsu Sung. Special Topics in Optical Engineering II(15/1)
|
|
- Evan Neal
- 5 years ago
- Views:
Transcription
1 Mar
2 Contents Two-port model Rate equation and damping Small signal response Conclusion
3 Two Port Model I:Current V:Voltage P: Optical Power ν: Optical frequency shift Model summarize parasitic effects and overall response This model are valid in single frequency DFB lasers
4 Two Port Model P: Optical Power Δν: Optical frequency shift 3 sections of laser model 1. package or mount parasitic Bonding wire inductance, capacitance between input terminal 2. semiconductor chip parasitic parasitic capacitance, resistance with semiconductor material 3. Intrinsic laser(active layer & cavity)
5 Two Port Model Signal response of semiconductor laser IM p( j) I ( j) A ( j) FM I ( j) A Parasitic: Lower high frequency of signal response Intrinsic Laser: Resonance peak
6 Parasitic Chip cross section
7 Parasitic Circuit model of parasitic L p : bondwire inductuce R p : Small loss resistance C p : Pad capacitance C s : Shunt capacitance R s : Series resistance I L : Leakage current
8 Rate Equations and Damping Single mode rate equation dn I A N g 0( N N 0g )(1 S ) S dt qv act n ds 1 N g0( N N0g )(1 S) S dt p n N: electron density S: photon density Γ: optical confinement factor τ p : photon lifetime τ n : electron lifetime V act : Volume of active layer β: Fraction of spontaneous emission coupled into the laser mode ε: gain compression characteristic absorption Spontaneous emission Stimulated emission N,S are assumed constant across active layer
9 Rate Equations and Damping Cause of damping in the modulation response Spontaneous emission coupled into the lasing mode Spatial hole burning combined with carrier diffusion Nonlinear due to spectral hole burning Nonlinear absorption
10 Small Signal Response Intensity Modulation M( j) p( j) i ( j) A 2 M( j) B0 M (0) ' 1 ' S ( j) j S ( g ) B S0 n p ns0 n p I ' qv th act gs p h M (0) 2q Damping term With some approximation M( j) 1 M 2 (0) j j 1 0 m
11 Small Signal Response Damping of resonance Damping term: ' 1 S0( g0 ) S 0 n p Damping term peak, ω p ω 0 Damping term peak, ω p ω 0 Low S 0 (Low output power) Spontaneous emission term dominate Large S 0 (Large output power) gain compression damping term(ε)
12 High Frequency limitations Recall Then M( j) 1 2 M (0) j j 1 0 m p m m 2 m p p db 0 m m m m 2 1 M p m 4 m
13 High Frequency limitations ω 0 proportional to output power ω p ω 0 at low output power(ω 0 /ω m <<1) ω p /ω m max at ω 0 /ω m =1, zero at ω 0 /ω m = 2 ω 3dB /ω m max at ω 0 /ω m = 2 M p =0(no peak) at ω 0 /ω m = 2 Second order Butterworth
14 Design for Wide-Band Laser ω 3dB /ω m max at ω 0 /ω m = 2 Make large ω 0 (up to 2) for large bandwidth gs p 1.Increse S 0 Decrease the width of the optical field distribution Design low threshhold current 2. Increase g 0 Decrease temperature 3. Reduce photon lifetime Reduce cavity length
15 Small Signal Response Frequency Modulation g0n 4 ( j) F( j) i ( j) A jm 1 2 F( j) 0 F(0) j j 0 m 2 ( ) 1
16 Small Signal Response IM FM Difference between IM,FM FM has much larger peak IM slope decade -40dB FM slope decade-20db
17 Conclusion Semiconductor Laser response modeling was described Bandwidth of direct modulator can control by small signal model
Paper Review. Special Topics in Optical Engineering II (15/1) Minkyu Kim. IEEE Journal of Quantum Electronics, Feb 1985
Paper Review IEEE Journal of Quantum Electronics, Feb 1985 Contents Semiconductor laser review High speed semiconductor laser Parasitic elements limitations Intermodulation products Intensity noise Large
More informationS. Blair February 15,
S Blair February 15, 2012 66 32 Laser Diodes A semiconductor laser diode is basically an LED structure with mirrors for optical feedback This feedback causes photons to retrace their path back through
More informationFIBER OPTICS. Prof. R.K. Shevgaonkar. Department of Electrical Engineering. Indian Institute of Technology, Bombay. Lecture: 14.
FIBER OPTICS Prof. R.K. Shevgaonkar Department of Electrical Engineering Indian Institute of Technology, Bombay Lecture: 14 Optical Sources Fiber Optics, Prof. R.K. Shevgaonkar, Dept. of Electrical Engineering,
More informationSchool of Electrical and Computer Engineering, Cornell University. ECE 5330: Semiconductor Optoelectronics. Fall 2014
School of Electrical and Computer Engineering, Cornell University ECE 5330: Semiconductor Optoelectronics Fall 014 Homework 7 Due on Nov. 06, 014 Suggested Readings: i) Study lecture notes. ii) Study Coldren
More informationNoise in voltage-biased scaled semiconductor laser diodes
Noise in voltage-biased scaled semiconductor laser diodes S. M. K. Thiyagarajan and A. F. J. Levi Department of Electrical Engineering University of Southern California Los Angeles, California 90089-1111
More information- Outline. Chapter 4 Optical Source. 4.1 Semiconductor physics
Chapter 4 Optical Source - Outline 4.1 Semiconductor physics - Energy band - Intrinsic and Extrinsic Material - pn Junctions - Direct and Indirect Band Gaps 4. Light Emitting Diodes (LED) - LED structure
More information6. Light emitting devices
6. Light emitting devices 6. The light emitting diode 6.. Introduction A light emitting diode consist of a p-n diode which is designed so that radiative recombination dominates. Homojunction p-n diodes,
More informationSignal regeneration - optical amplifiers
Signal regeneration - optical amplifiers In any atom or solid, the state of the electrons can change by: 1) Stimulated absorption - in the presence of a light wave, a photon is absorbed, the electron is
More informationAppendix 1: List of symbols
Appendix 1: List of symbols Symbol Description MKS Units a Acceleration m/s 2 a 0 Bohr radius m A Area m 2 A* Richardson constant m/s A C Collector area m 2 A E Emitter area m 2 b Bimolecular recombination
More informationDistributed feedback semiconductor lasers
Distributed feedback semiconductor lasers John Carroll, James Whiteaway & Dick Plumb The Institution of Electrical Engineers SPIE Optical Engineering Press 1 Preface Acknowledgments Principal abbreviations
More informationThe effective factors on threshold conditions in laser diode Passive Q-Switching
J. Basic. Appl. Sci. Res., (4)4079-4084, 0 0, TextRoad Publication ISSN 090-4304 Journal of Basic and Applied Scientific Research www.textroad.com The effective factors on threshold conditions in laser
More informationPhotonic Micro and Nanoresonators
Photonic Micro and Nanoresonators Hauptseminar Nanooptics and Nanophotonics IHFG Stuttgart Overview 2 I. Motivation II. Cavity properties and species III. Physics in coupled systems Cavity QED Strong and
More informationPhotonic Devices. Light absorption and emission. Transitions between discrete states
Light absorption and emission Photonic Devices Transitions between discrete states Transition rate determined by the two states: Fermi s golden rule Absorption and emission of a semiconductor Vertical
More informationChapter 5. Semiconductor Laser
Chapter 5 Semiconductor Laser 5.0 Introduction Laser is an acronym for light amplification by stimulated emission of radiation. Albert Einstein in 1917 showed that the process of stimulated emission must
More informationMTLE-6120: Advanced Electronic Properties of Materials. Semiconductor p-n junction diodes. Reading: Kasap ,
MTLE-6120: Advanced Electronic Properties of Materials 1 Semiconductor p-n junction diodes Reading: Kasap 6.1-6.5, 6.9-6.12 Metal-semiconductor contact potential 2 p-type n-type p-type n-type Same semiconductor
More informationLecture 9. PMTs and Laser Noise. Lecture 9. Photon Counting. Photomultiplier Tubes (PMTs) Laser Phase Noise. Relative Intensity
s and Laser Phase Phase Density ECE 185 Lasers and Modulators Lab - Spring 2018 1 Detectors Continuous Output Internal Photoelectron Flux Thermal Filtered External Current w(t) Sensor i(t) External System
More informationAssignment 6. Solution: Assumptions - Momentum is conserved, light holes are ignored. Diagram: a) Using Eq a Verdeyen,
Assignment 6 Solution: Assumptions - Momentum is conserved, light holes are ignored. Diagram: a) Using Eq..4.5a Verdeyen, ΔE c = E 2 E c = Using Eq..4.5b Verdeyen, ΔE v = E v E = b) Using Eq.2.9 Verdeyen,
More informationLASERS. Amplifiers: Broad-band communications (avoid down-conversion)
L- LASERS Representative applications: Amplifiers: Broad-band communications (avoid down-conversion) Oscillators: Blasting: Energy States: Hydrogen atom Frequency/distance reference, local oscillators,
More informationPHOTOVOLTAICS Fundamentals
PHOTOVOLTAICS Fundamentals PV FUNDAMENTALS Semiconductor basics pn junction Solar cell operation Design of silicon solar cell SEMICONDUCTOR BASICS Allowed energy bands Valence and conduction band Fermi
More informationLaser Types Two main types depending on time operation Continuous Wave (CW) Pulsed operation Pulsed is easier, CW more useful
What Makes a Laser Light Amplification by Stimulated Emission of Radiation Main Requirements of the Laser Laser Gain Medium (provides the light amplification) Optical Resonator Cavity (greatly increase
More informationQuantum Electronics Laser Physics PS Theory of the Laser Oscillation
Quantum Electronics Laser Physics PS407 6. Theory of the Laser Oscillation 1 I. Laser oscillator: Overview Laser is an optical oscillator. Resonant optical amplifier whose output is fed back into its input
More information1 Longitudinal modes of a laser cavity
Adrian Down May 01, 2006 1 Longitudinal modes of a laser cavity 1.1 Resonant modes For the moment, imagine a laser cavity as a set of plane mirrors separated by a distance d. We will return to the specific
More informationExternal (differential) quantum efficiency Number of additional photons emitted / number of additional electrons injected
Semiconductor Lasers Comparison with LEDs The light emitted by a laser is generally more directional, more intense and has a narrower frequency distribution than light from an LED. The external efficiency
More informationMode-partition Noise in Semiconductor Lasers
Mode-partition Noise in Semiconductor Lasers Linh V. T. Nguyen Electronic Warfare and Radar Division Systems Sciences Laboratory DSTO-RR-044 ABSTRACT The primary goal of this research activity is to understand
More informationEngineering Medical Optics BME136/251 Winter 2017
Engineering Medical Optics BME136/251 Winter 2017 Monday/Wednesday 2:00-3:20 p.m. Beckman Laser Institute Library, MSTB 214 (lab) Teaching Assistants (Office hours: Every Tuesday at 2pm outside of the
More informationPulsed Lasers Revised: 2/12/14 15: , Henry Zmuda Set 5a Pulsed Lasers
Pulsed Lasers Revised: 2/12/14 15:27 2014, Henry Zmuda Set 5a Pulsed Lasers 1 Laser Dynamics Puled Lasers More efficient pulsing schemes are based on turning the laser itself on and off by means of an
More informationEinstein s Approach to Gain and Spontaneous Emission
APPENDIX SIX Einstein s Approach to Gain and Spontaneous Emission A6.1 INTRODUCTION Equation (2.14) gives us the relationship between gain and the stimulated recombination rate, R st = v g gn p. (A6.1)
More informationModern Physics. Unit 6: Hydrogen Atom - Radiation Lecture 6.5: Optical Absorption. Ron Reifenberger Professor of Physics Purdue University
Modern Physics Unit 6: Hydrogen tom - Radiation Lecture 6.5: Optical bsorption Ron Reifenberger Professor of Physics Purdue University 1 We now have a simple quantum model for how light is emitted. How
More informationINSTITUTE BECKMAN. K. Hess, Y. Liu, F. Oyafuso, W.C. Ng and B.D. Klein. The Beckman Institute University of Illinois at Urbana-Champaign
BECKMAN INSTITUTE K. Hess, Y. Liu, F. Oyafuso, W.C. Ng and B.D. Klein. The Beckman Institute University of Illinois at Urbana-Champaign Photo by Don Hamerman Typical VCSEL Structure and Electronic Mesh
More informationWhat are Lasers? Light Amplification by Stimulated Emission of Radiation LASER Light emitted at very narrow wavelength bands (monochromatic) Light
What are Lasers? What are Lasers? Light Amplification by Stimulated Emission of Radiation LASER Light emitted at very narrow wavelength bands (monochromatic) Light emitted in a directed beam Light is coherenent
More informationSemiconductor Optoelectronics Prof. M. R. Shenoy Department of Physics Indian Institute of Technology, Delhi
Semiconductor Optoelectronics Prof. M. R. Shenoy Department of Physics Indian Institute of Technology, Delhi Lecture - 1 Context and Scope of the Course (Refer Slide Time: 00:44) Welcome to this course
More informationConventional Paper-I Part A. 1. (a) Define intrinsic wave impedance for a medium and derive the equation for intrinsic vy
EE-Conventional Paper-I IES-01 www.gateforum.com Conventional Paper-I-01 Part A 1. (a) Define intrinsic wave impedance for a medium and derive the equation for intrinsic vy impedance for a lossy dielectric
More informationANALYSIS OF AN INJECTION-LOCKED BISTABLE SEMICONDUCTOR LASER WITH THE FREQUENCY CHIRPING
Progress In Electromagnetics Research C, Vol. 8, 121 133, 2009 ANALYSIS OF AN INJECTION-LOCKED BISTABLE SEMICONDUCTOR LASER WITH THE FREQUENCY CHIRPING M. Aleshams Department of Electrical and Computer
More informationEECE 4646 Optics for Engineers. Lecture 17
C 4646 Optics for ngineers Lecture 7 9 March, 00 Spontaneous mission Rate BFOR MISSION DURING MISSION AFTR MISSION electron hν hν The rate of spontaneous emission r sp can be written as: A f r sp A f[
More informationQuantum Electronics/Laser Physics Chapter 4 Line Shapes and Line Widths
Quantum Electronics/Laser Physics Chapter 4 Line Shapes and Line Widths 4.1 The Natural Line Shape 4.2 Collisional Broadening 4.3 Doppler Broadening 4.4 Einstein Treatment of Stimulated Processes Width
More informationVLSI Design and Simulation
VLSI Design and Simulation Performance Characterization Topics Performance Characterization Resistance Estimation Capacitance Estimation Inductance Estimation Performance Characterization Inverter Voltage
More informationMetals and Insulators
Metals and Insulators Covalent bonds, weak U seen by e-, with E F being in mid-band area: free e-, metallic Covalent or slightly ionic bonds, weak U to medium U, with E F near band edge E F in or near
More informationICPY471. November 20, 2017 Udom Robkob, Physics-MUSC
ICPY471 19 Laser Physics and Systems November 20, 2017 Udom Robkob, Physics-MUSC Topics Laser light Stimulated emission Population inversion Laser gain Laser threshold Laser systems Laser Light LASER=
More informationEE 472 Solutions to some chapter 4 problems
EE 472 Solutions to some chapter 4 problems 4.4. Erbium doped fiber amplifier An EDFA is pumped at 1480 nm. N1 and N2 are the concentrations of Er 3+ at the levels E 1 and E 2 respectively as shown in
More informationA STUDY OF DYNAMIC CHARACTERIZATIONS OF GaAs/ALGaAs SELF-ASSEMBLED QUANTUM DOT LASERS
Romanian Reports in Physics, Vol. 63, No. 4, P. 1061 1069, 011 A STUDY OF DYNAMIC CHARACTERIZATIONS OF GaAs/ALGaAs SELF-ASSEMBLED QUANTUM DOT LASERS H. ARABSHAHI Payame Nour University of Fariman, Department
More informationIntroduction Fundamentals of laser Types of lasers Semiconductor lasers
Introduction Fundamentals of laser Types of lasers Semiconductor lasers Is it Light Amplification and Stimulated Emission Radiation? No. So what if I know an acronym? What exactly is Light Amplification
More informationLASER. Light Amplification by Stimulated Emission of Radiation
LASER Light Amplification by Stimulated Emission of Radiation Energy Level, Definitions The valence band is the highest filled band The conduction band is the next higher empty band The energy gap has
More informationHybrid indium phosphide-on-silicon nanolaser diode
In the format provided by the authors and unedited. DOI: 10.1038/NPHOTON.2017.56 Hybrid indium phosphide-on-silicon nanolaser diode Guillaume Crosnier 1,2, Dorian Sanchez 2, Sophie Bouchoule 2, Paul Monnier
More informationECE 240a - Notes on Spontaneous Emission within a Cavity
ECE 0a - Notes on Spontaneous Emission within a Cavity Introduction Many treatments of lasers treat the rate of spontaneous emission as specified by the time constant τ sp as a constant that is independent
More informationSegmented 1.55um Laser with 400% Differential Quantum Efficiency J. Getty, E. Skogen, L. Coldren, University of California, Santa Barbara, CA.
Segmented 1.55um Laser with 400% Differential Quantum Efficiency J. Getty, E. Skogen, L. Coldren, University of California, Santa Barbara, CA. Abstract: By electrically segmenting, and series-connecting
More informationLaser Basics. What happens when light (or photon) interact with a matter? Assume photon energy is compatible with energy transition levels.
What happens when light (or photon) interact with a matter? Assume photon energy is compatible with energy transition levels. Electron energy levels in an hydrogen atom n=5 n=4 - + n=3 n=2 13.6 = [ev]
More informationOPTI 511, Spring 2016 Problem Set 9 Prof. R. J. Jones
OPTI 5, Spring 206 Problem Set 9 Prof. R. J. Jones Due Friday, April 29. Absorption and thermal distributions in a 2-level system Consider a collection of identical two-level atoms in thermal equilibrium.
More informationCourse overview. Me: Dr Luke Wilson. The course: Physics and applications of semiconductors. Office: E17 open door policy
Course overview Me: Dr Luke Wilson Office: E17 open door policy email: luke.wilson@sheffield.ac.uk The course: Physics and applications of semiconductors 10 lectures aim is to allow time for at least one
More informationThe Generation of Ultrashort Laser Pulses
The Generation of Ultrashort Laser Pulses The importance of bandwidth More than just a light bulb Two, three, and four levels rate equations Gain and saturation But first: the progress has been amazing!
More informationFIBER OPTICS. Prof. R.K. Shevgaonkar. Department of Electrical Engineering. Indian Institute of Technology, Bombay. Lecture: 17.
FIBER OPTICS Prof. R.K. Shevgaonkar Department of Electrical Engineering Indian Institute of Technology, Bombay Lecture: 17 Optical Sources- Introduction to LASER Fiber Optics, Prof. R.K. Shevgaonkar,
More informationPhys 2310 Fri. Dec. 12, 2014 Today s Topics. Begin Chapter 13: Lasers Reading for Next Time
Phys 2310 Fri. Dec. 12, 2014 Today s Topics Begin Chapter 13: Lasers Reading for Next Time 1 Reading this Week By Fri.: Ch. 13 (13.1, 13.3) Lasers, Holography 2 Homework this Week No Homework this chapter.
More informationConventional Paper I-2010
Conventional Paper I-010 1. (a) Sketch the covalent bonding of Si atoms in a intrinsic Si crystal Illustrate with sketches the formation of bonding in presence of donor and acceptor atoms. Sketch the energy
More informationElectrons are shared in covalent bonds between atoms of Si. A bound electron has the lowest energy state.
Photovoltaics Basic Steps the generation of light-generated carriers; the collection of the light-generated carriers to generate a current; the generation of a large voltage across the solar cell; and
More informationPopulation inversion occurs when there are more atoms in the excited state than in the ground state. This is achieved through the following:
Lasers and SemiconductorsTutorial Lasers 1. Fill in the table the differences between spontaneous emission and stimulated emission in atoms: External stimulus Direction of emission Phase & coherence of
More informationLaser Types Two main types depending on time operation Continuous Wave (CW) Pulsed operation Pulsed is easier, CW more useful
Main Requirements of the Laser Optical Resonator Cavity Laser Gain Medium of 2, 3 or 4 level types in the Cavity Sufficient means of Excitation (called pumping) eg. light, current, chemical reaction Population
More informationAcoustics and Fourier Transform
AFT Acoustics and Fourier Transform 1. A Hamming filter is used to compute FFT (Fast Fourier Transform) plots in the AFT experiment. What is the reason for using such a filter? 2. Briefly describe what
More informationGain Compression Effect on the Modulation Dynamics of an Optically Injection-Locked Semiconductor Laser using Gain Lever
Gain Compression Effect on the Modulation Dynamics of an Optically Injection-Locked Semiconductor Laser using Gain Lever J.-M. Sarraute a,b*,k.schires a,s.larochelle b,andf.grillot a,c a CNRS LTCI, Télécom
More informationQuantum Electronics Laser Physics. Chapter 5. The Laser Amplifier
Quantum Electronics Laser Physics Chapter 5. The Laser Amplifier 1 The laser amplifier 5.1 Amplifier Gain 5.2 Amplifier Bandwidth 5.3 Amplifier Phase-Shift 5.4 Amplifier Power source and rate equations
More informationR. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition. Figures for Chapter 6
R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition Figures for Chapter 6 Free electron Conduction band Hole W g W C Forbidden Band or Bandgap W V Electron energy Hole Valence
More informationOPTI 511R, Spring 2018 Problem Set 10 Prof. R.J. Jones Due Thursday, April 19
OPTI 511R, Spring 2018 Problem Set 10 Prof. R.J. Jones Due Thursday, April 19 1. (a) Suppose you want to use a lens focus a Gaussian laser beam of wavelength λ in order to obtain a beam waist radius w
More informationSimulation of gain-switched picosecond pulse generation from quantum well lasers
Optical and Quantum Electronics 28 (1996) 1669-1676 Simulation of gain-switched picosecond pulse generation from quantum well lasers H. A. TAFTI School of Electronics and Communication Engineering, Anna
More informationPreamplifier in 0.5µm CMOS
A 2.125 Gbaud 1.6kΩ Transimpedance Preamplifier in 0.5µm CMOS Sunderarajan S. Mohan Thomas H. Lee Center for Integrated Systems Stanford University OUTLINE Motivation Shunt-peaked Amplifier Inductor Modeling
More informationMs. Monika Srivastava Doctoral Scholar, AMR Group of Dr. Anurag Srivastava ABV-IIITM, Gwalior
By Ms. Monika Srivastava Doctoral Scholar, AMR Group of Dr. Anurag Srivastava ABV-IIITM, Gwalior Unit 2 Laser acronym Laser Vs ordinary light Characteristics of lasers Different processes involved in lasers
More informationChapter 2 Optical Transitions
Chapter 2 Optical Transitions 2.1 Introduction Among energy states, the state with the lowest energy is most stable. Therefore, the electrons in semiconductors tend to stay in low energy states. If they
More informationLecture 10. Lidar Effective Cross-Section vs. Convolution
Lecture 10. Lidar Effective Cross-Section vs. Convolution q Introduction q Convolution in Lineshape Determination -- Voigt Lineshape (Lorentzian Gaussian) q Effective Cross Section for Single Isotope --
More informationWhat are Lasers? Light Amplification by Stimulated Emission of Radiation LASER Light emitted at very narrow wavelength bands (monochromatic) Light
What are Lasers? What are Lasers? Light Amplification by Stimulated Emission of Radiation LASER Light emitted at very narrow wavelength bands (monochromatic) Light emitted in a directed beam Light is coherenent
More informationDevice Physics: The Bipolar Transistor
Monolithic Amplifier Circuits: Device Physics: The Bipolar Transistor Chapter 4 Jón Tómas Guðmundsson tumi@hi.is 2. Week Fall 2010 1 Introduction In analog design the transistors are not simply switches
More informationLaser Detection Techniques
Laser Detection Techniques K.-H. Gericke Institute for Physical Chemistry University Braunschweig E 2 E 1 = hn, λ = c /n Lambert-Beer Law Transmittance of the sample:: T = I / I 0 T = e -snl = e -α, where
More informationMOS Transistor I-V Characteristics and Parasitics
ECEN454 Digital Integrated Circuit Design MOS Transistor I-V Characteristics and Parasitics ECEN 454 Facts about Transistors So far, we have treated transistors as ideal switches An ON transistor passes
More informationSIDDHARTH INSTITUTE OF ENGINEERING & TECHNOLOGY :: PUTTUR Siddharth Nagar, Narayanavanam Road QUESTION BANK (DESCRIPTIVE) UNIT I
SIDDHARTH INSTITUTE OF ENGINEERING & TECHNOLOGY :: PUTTUR Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK (DESCRIPTIVE) Subject with Code : (18HS0849) Year & Sem: I-B.Tech & I-Sem Course & Branch:
More informationHigh Speed Communication Circuits and Systems Lecture 4 Generalized Reflection Coefficient, Smith Chart, Integrated Passive Components
High Speed Communication Circuits and Systems Lecture 4 Generalized Reflection Coefficient, Smith Chart, Integrated Passive Components Michael H. Perrott February 11, 2004 Copyright 2004 by Michael H.
More informationSUPPLEMENTARY INFORMATION
doi:10.1038/nature12036 We provide in the following additional experimental data and details on our demonstration of an electrically pumped exciton-polariton laser by supplementing optical and electrical
More informationHigh Speed VCSELs With Separated Quantum Wells
High Speed VCSELs With Separated Quantum Wells V. V. Lysak 1,2, I. M. Safonov 2, Y. M. Song 1, I. A. Sukhoivanov 1,3, Yong Tak Lee 1 1 Department of Information and Communications, Gwangju Institute of
More informationEnhancing the Rate of Spontaneous Emission in Active Core-Shell Nanowire Resonators
Chapter 6 Enhancing the Rate of Spontaneous Emission in Active Core-Shell Nanowire Resonators 6.1 Introduction Researchers have devoted considerable effort to enhancing light emission from semiconductors
More informationDiode Lasers and Photonic Integrated Circuits
Diode Lasers and Photonic Integrated Circuits L. A. COLDREN S. W. CORZINE University of California Santa Barbara, California A WILEY-INTERSCIENCE PUBLICATION JOHN WILEY & SONS, INC. NEW YORK / CHICHESTER
More informationThe Report of the Characteristics of Semiconductor Laser Experiment
The Report of the Characteristics of Semiconductor Laser Experiment Masruri Masruri (186520) 22/05/2008 1 Laboratory Setup The experiment consists of two kind of tasks: To measure the caracteristics of
More informationSemiconductor Disk Laser on Microchannel Cooler
Semiconductor Disk Laser on Microchannel Cooler Eckart Gerster An optically pumped semiconductor disk laser with a double-band Bragg reflector mirror is presented. This mirror not only reflects the laser
More informationECE 484 Semiconductor Lasers
ECE 484 Semiconductor Lasers Dr. Lukas Chrostowski Department of Electrical and Computer Engineering University of British Columbia January, 2013 Module Learning Objectives: Understand the importance of
More informationPhoto Diode Interaction of Light & Atomic Systems Assume Only two possible states of energy: W u and W l Energy levels are infinitesimally sharp Optical transitions occur between u and l Monochromatic
More informationLaser Diodes. Revised: 3/14/14 14: , Henry Zmuda Set 6a Laser Diodes 1
Laser Diodes Revised: 3/14/14 14:03 2014, Henry Zmuda Set 6a Laser Diodes 1 Semiconductor Lasers The simplest laser of all. 2014, Henry Zmuda Set 6a Laser Diodes 2 Semiconductor Lasers 1. Homojunction
More informationRefinements to Incremental Transistor Model
Refinements to Incremental Transistor Model This section presents modifications to the incremental models that account for non-ideal transistor behavior Incremental output port resistance Incremental changes
More informationIntroduction to Sources: Radiative Processes and Population Inversion in Atoms, Molecules, and Semiconductors Atoms and Molecules
OPTI 500 DEF, Spring 2012, Lecture 2 Introduction to Sources: Radiative Processes and Population Inversion in Atoms, Molecules, and Semiconductors Atoms and Molecules Energy Levels Every atom or molecule
More informationLecture 15: Optoelectronic devices: Introduction
Lecture 15: Optoelectronic devices: Introduction Contents 1 Optical absorption 1 1.1 Absorption coefficient....................... 2 2 Optical recombination 5 3 Recombination and carrier lifetime 6 3.1
More informationPropagation of Photons Through Localized Coupled Cavity Modes in Photonic Band Gap Structures:
CLEO, May 7-12, 7 2000, San Francisco Propagation of Photons Through Localized Coupled Cavity Modes in Photonic Band Gap Structures: A New Type of Waveguiding Mechanism Mehmet Bayındır Burak Temelkuran
More informationTransistor Noise Lecture 10 High Speed Devices
Transistor Noise 1 Transistor Noise A very brief introduction to circuit and transistor noise. I an not an expert regarding noise Maas: Noise in Linear and Nonlinear Circuits Lee: The Design of CMOS RFIC
More informationPhotonic crystal laser threshold analysis using 3D FDTD with a material gain model
Photonic crystal laser threshold analysis using 3D FDTD with a material gain model Adam Mock and John O'Brien Microphotonic Device Group University of Southern California July 14, 2009 Session: ITuD6 Integrated
More informationEE 6313 Homework Assignments
EE 6313 Homework Assignments 1. Homework I: Chapter 1: 1.2, 1.5, 1.7, 1.10, 1.12 [Lattice constant only] (Due Sept. 1, 2009). 2. Homework II: Chapter 1, 2: 1.17, 2.1 (a, c) (k = π/a at zone edge), 2.3
More informationASSOCIATE DEGREE IN ENGINEERING RESIT EXAMINATIONS SEMESTER 1. "Electrical Eng Science"
ASSOCIATE DEGREE IN ENGINEERING RESIT EXAMINATIONS SEMESTER 1 COURSE NAME: "Electrical Eng Science" CODE: GROUP: "[ADET 2]" DATE: December 2010 TIME: DURATION: 9:00 am "Two hours" INSTRUCTIONS: 1. This
More informationLast Lecture. Overview and Introduction. 1. Basic optics and spectroscopy. 2. Lasers. 3. Ultrafast lasers and nonlinear optics
Last Lecture Overview and Introduction 1. Basic optics and spectroscopy. Lasers 3. Ultrafast lasers and nonlinear optics 4. Time-resolved spectroscopy techniques Jigang Wang, Feb, 009 Today 1. Spectroscopy
More informationL.A.S.E.R. LIGHT AMPLIFICATION. EMISSION of RADIATION
Lasers L.A.S.E.R. LIGHT AMPLIFICATION by STIMULATED EMISSION of RADIATION History of Lasers and Related Discoveries 1917 Stimulated emission proposed by Einstein 1947 Holography (Gabor, Physics Nobel Prize
More informationActive Medium Acceleration
Active Medium Acceleration Levi Schächter Department of Electrical Engineering Technion - Israel Institute of Technology Haifa 3, ISRAEL Outline Acceleration concepts Wake in a medium Frank-Hertz, LASER
More informationPhotonics applications II. Ion-doped ChGs
Photonics applications II Ion-doped ChGs 1 ChG as a host for doping; pros and cons - Important - Condensed summary Low phonon energy; Enabling emission at longer wavelengths Reduced nonradiative multiphonon
More informationCharacteristics of a Designed 1550 nm AlGaInAs/InP MQW VCSEL
INTERNATIONAL JOURNAL OF MULTIDISCIPLINARY SCIENCES AND ENGINEERING, VOL. 4, NO. 1, JANUARY 13 Characteristics of a Designed 155 nm AlGaInAs/InP MQW VCSEL Raja Rashidul Hasan and Rinku Basak Abstract The
More informationBJT - Mode of Operations
JT - Mode of Operations JTs can be modeled by two back-to-back diodes. N+ P N- N+ JTs are operated in four modes. HO #6: LN 251 - JT M Models Page 1 1) Forward active / normal junction forward biased junction
More informationUltrafast All-optical Switches Based on Intersubband Transitions in GaN/AlN Multiple Quantum Wells for Tb/s Operation
Ultrafast All-optical Switches Based on Intersubband Transitions in GaN/AlN Multiple Quantum Wells for Tb/s Operation Jahan M. Dawlaty, Farhan Rana and William J. Schaff Department of Electrical and Computer
More informationEYP-DFB TOC03-000x
Version 0.93 2009-05-06 page 1 from 5 General Product Information Product Application 1083 nm DFB Laser with hermetic TO Housing Spectroscopy Monitor Diode, Thermoelectric Cooler and Thermistor He Polarization
More informationStudy on Quantum Dot Lasers and their advantages
Study on Quantum Dot Lasers and their advantages Tae Woo Kim Electrical and Computer Engineering University of Illinois, Urbana Champaign Abstract Basic ideas for understanding a Quantum Dot Laser were
More informationPhys 2310 Mon. Dec. 4, 2017 Today s Topics. Begin supplementary material: Lasers Reading for Next Time
Phys 2310 Mon. Dec. 4, 2017 Today s Topics Begin supplementary material: Lasers Reading for Next Time 1 By Wed.: Reading this Week Lasers, Holography 2 Homework this Week No Homework this chapter. Finish
More informationStimulated Emission. ! Electrons can absorb photons from medium. ! Accelerated electrons emit light to return their ground state
Lecture 15 Stimulated Emission Devices- Lasers! Stimulated emission and light amplification! Einstein coefficients! Optical fiber amplifiers! Gas laser and He-Ne Laser! The output spectrum of a gas laser!
More informationTime-domain simulation of semiconductor laser light with correlated amplitude and phase noise
Time-domain simulation of semiconductor laser light with correlated amplitude and phase noise Daniel Lasaosa, Martín Vega-Leal, Carlos Fañanas Universidad Pública de Navarra, NUSOD Pamplona, 007 Delaware
More information