74AHC1G66; 74AHCT1G66

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1 Rev December 2008 Product data sheet 1. General description 2. Features 3. Ordering information 74AHC1G66 and 74AHCT1G66 are high-speed Si-gate CMOS devices. They are single-pole single-throw analog switches. The switch has two input/output pins (Y and Z) and an active HIGH enable input pin (). When pin is LOW, the analog switch is turned off. Very low ON resistance: 26 Ω (typ.) at = 3.0 V 16 Ω (typ.) at = 4.5 V 14 Ω (typ.) at = 5.5 V High noise immunity Low power dissipation Balanced propagation delays Multiple package options SD protection: HMB JSD22-A114 exceeds 2000 V MM JSD22-A115-A exceeds 200 V CDM JSD22-C101C exceeds 1000 V Specified from 40 C to+85 C and 40 C to +125 C Table 1. Ordering information Type number Package Temperature range Name Description Version 74AHC1G66GW 40 C to +125 C TSSOP5 plastic thin shrink small outline package; SOT AHCT1G66GW 74AHC1G66GV 40 C to +125 C SC-74A 5 leads; body width 1.25 mm plastic surface-mounted package; 5 leads SOT753 74AHCT1G66GV

2 4. Marking Table 2. Marking codes Type number 74AHC1G66GW 74AHCT1G66GW 74AHC1G66GV 74AHCT1G66GV Marking AL CL A66 C66 5. Functional diagram Z Y Z Y 001aag487 mna628 Fig 1. Logic symbol Fig 2. Logic diagram 6. Pinning information 6.1 Pinning 74AHC1G66 74AHCT1G66 Y 1 5 Z 2 GND aai834 Fig 3. Pin configuration SOT353-1 and SOT753 Product data sheet Rev December of 17

3 6.2 Pin description Table 3. Pin description Symbol Pin Description Y 1 independent input or output Z 2 independent input or output GND 3 ground (0 V) 4 enable input (active HIGH) 5 supply voltage 7. Functional description Table 4. Function table [1] Input L H Switch OFF ON [1] H = HIGH voltage level; L = LOW voltage level. 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit supply voltage V I IK input clamping current V I < 0.5 V [1] 20 - ma I SK switch clamping current V I < 0.5 V or V I > V [1] - ±20 ma I SW switch current 0.5 V < V O < V - ±25 ma I CC supply current - 75 ma I GND ground current 75 - ma T stg storage temperature C P tot total power dissipation T amb = 40 C to +125 C [2] mw [1] The input and output voltage ratings may be exceeded if the input and output voltage ratings are observed. [2] For TSSOP5 and SC-74A packages: above 87.5 C the value of P tot derates linearly with 4.0 mw/k. 9. Recommended operating conditions Table 6. Recommended operating conditions Voltages are referenced to GND (ground = 0 V). [1] Symbol Parameter Conditions 74AHC1G66 74AHCT1G66 Unit Min Typ Max Min Typ Max supply voltage V V I input voltage V V SW switch voltage V Product data sheet Rev December of 17

4 Table 6. Recommended operating conditions continued Voltages are referenced to GND (ground = 0 V). [1] Symbol Parameter Conditions 74AHC1G66 74AHCT1G66 Unit T amb ambient temperature C t/ V input transition rise and fall rate [1] To avoid drawing current out of pin Z, when switch current flows in pin Y, the voltage drop across the bidirectional switch must not exceed 0.4 V. If the switch current flows into pin Z, no current will flow out of terminal Y. In this case there is no limit for the voltage drop across the switch, but the voltage at pins Y and Z may not exceed or GND. [2] Applies to control signal levels. 10. Static characteristics Min Typ Max Min Typ Max = 3.3 ± 0.3 V [2] ns/v = 5.0 ± 0.5 V [2] ns/v Table 7. Static characteristics Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit 74AHC1G66 V IH HIGH-level input voltage V IL I I I S(OFF) I S(ON) LOW-level input voltage input leakage current OFF-state leakage current ON-state leakage current Min Typ Max Min Max Min Max = 2.0 V V = 3.0 V V = 5.5 V V = 2.0 V V = 3.0 V V = 5.5 V V V I = 5.5 V or GND; µa = 5.5 V Y or Z; = 5.5 V; µa see Figure 4 Y or Z; = 5.5 V; see Figure µa I CC supply current, Y or Z = or GND; = 5.5 V µa C I input input pf capacitance C S(ON) ON-state capacitance Y or Z input or output pf 74AHCT1G66 V IH HIGH-level = 4.5 V to 5.5 V V input voltage V IL LOW-level input voltage = 4.5 V to 5.5 V V I I input leakage current V I = 5.5 V or GND; = 5.5 V µa Product data sheet Rev December of 17

5 Table 7. Static characteristics continued Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit Min Typ Max Min Max Min Max µa I S(OFF) I S(ON) I CC I CC C I C S(ON) OFF-state leakage current ON-state leakage current Y or Z; = 5.5 V; see Figure 4 Y or Z; = 5.5 V; see Figure 5 supply current, Y or Z = or GND; = 5.5 V additional supply current input capacitance ON-state capacitance per input pin; V I = 3.4 V; other inputs at or GND; I O = 0 A; = 5.5 V µa µa ma input pf Y or Z input or output pf 10.1 Test circuits V IL V IH I S Y Z I S I S Y Z VI GND VO VI GND VO 001aai aai836 V I = or GND and V O = GND or. V I = or GND and V O = open circuit. Fig 4. Test circuit for measuring OFF-state leakage current Fig 5. Test circuit for measuring ON-state leakage current Product data sheet Rev December of 17

6 10.2 ON resistance Table 8. ON resistance At recommended operating conditions; voltages are referenced to GND (ground 0 V); for graph see Figure 7 [1]. Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit Typ max Max Max 74AHC1G66 and 74AHCT1G66 R ON(peak) ON resistance V I = to GND; see Figure 6 (peak) I SW = 1.0 ma; = 2.0 V 148 [1] Ω I SW = 10 ma; = 3.0 V to 3.6 V Ω I SW = 10 ma; = 4.5 V to 5.5 V Ω R ON(rail) ON resistance V I = GND; see Figure 6 (rail) I SW = 1.0 ma; = 2.0 V Ω I SW = 10 ma; = 3.0 V to 3.6 V Ω I SW = 10 ma; = 4.5 V to 5.5 V Ω V I = ; see Figure 6 I SW = 1.0 ma; = 2.0 V Ω I SW = 10 ma; = 3.0 V to 3.6 V Ω I SW = 10 ma; = 4.5 V to 5.5 V Ω [1] At supply voltages approaching 2 V, the analog switch ON resistance becomes extremely non-linear. Therefore it is recommended that these devices be used to transmit digital signals only, when using this supply voltage ON resistance test circuit and graphs 40 mna630 R ON (Ω) 30 V SW = 3.0 V 20 V IH 4.5 V 5.5 V Y Z 10 VI GND ISW 001aag V I (V) R ON =V SW / I SW. T amb =25 C. Fig 6. Test circuit for measuring ON resistance Fig 7. Typical ON resistance as a function of input voltage Product data sheet Rev December of 17

7 11. Dynamic characteristics Table 9. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); C L = 50 pf; unless otherwise specified; For test circuit see Figure 10. Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit Typ [1] max Max Max 74AHC1G66 t pd propagation Y to Z or Z to Y; see Figure 8 [2] delay = 2.0 V ns = 3.0 V to 3.6 V ns = 4.5 V to 5.5 V ns t en enable time to Y or Z; see Figure 9 [2] = 2.0 V; C L = 15 pf ns = 2.0 V ns = 3.0 V to 3.6 V; ns C L =15pF = 3.0 V to 3.6 V ns = 4.5 V to 5.5 V; ns C L =15pF = 4.5 V to 5.5 V ns t dis disable time to Y or Z; see Figure 9 [2] C PD power dissipation capacitance 74AHCT1G66 t pd propagation delay = 2.0 V; C L = 15 pf ns = 2.0 V ns = 3.0 V to 3.6 V; ns C L =15pF = 3.0 V to 3.6 V ns = 4.5 V to 5.5 V; ns C L =15pF = 4.5 V to 5.5 V ns V I = GND to [3] pf Y to Z or Z to Y; see Figure 8 [2] = 4.5 V to 5.5 V ns t en enable time to Y or Z; see Figure 9 [2] = 4.5 V to 5.5 V; ns C L =15pF = 4.5 V to 5.5 V ns t dis disable time to Y or Z; see Figure 9 [2] = 4.5 V to 5.5 V; ns C L =15pF = 4.5 V to 5.5 V ns Product data sheet Rev December of 17

8 Table 9. Dynamic characteristics continued Voltages are referenced to GND (ground = 0 V); C L = 50 pf; unless otherwise specified; For test circuit see Figure 10. Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit Typ [1] max Max Max C PD power dissipation capacitance V I = GND to [3] pf [1] All typical values are measured at = 2.0 V, = 3.3 V, = 5.0 V and T amb =25 C. [2] t pd is the same as t PLH and t PHL. t en is the same as t PZL and t PZH. t dis is the same as t PLZ and t PHZ. [3] C PD is used to determine the dynamic power dissipation P D (µw). P D =C PD V 2 CC f i + Σ ((C L C SW ) V 2 CC f o ) where: f i = input frequency in MHz; f o = output frequency in MHz; C L = output load capacitance in pf; C SW = maximum switch capacitance in pf (see Table 7); = supply voltage in Volt; Σ ((C L C SW ) V 2 CC f o ) = sum of outputs Waveforms and test circuit V I Y or Z input GND t PLH t PHL V OH Z or Y output V OL mna667 Fig 8. Measurement points are given in Table 10. Logic levels: V OL and V OH are typical output voltage levels that occur with the output load. Input (Y or Z) to output (Z or Y) propagation delays Product data sheet Rev December of 17

9 V I GND t PLZ t PZL Y or Z output LOW-to-OFF OFF-to-LOW V OL V X t PHZ t PZH Y or Z output HIGH-to-OFF OFF-to-HIGH V OH GND switch enabled V Y switch disabled switch enabled mna668 Fig 9. Measurement points are given in Table 10. Logic levels: V OL and V OH are typical output voltage levels that occur with the output load. nable and disable times Table 10. Measurement points Type Input Output V X V Y 74AHC1G V OL V V OH 0.3 V 74AHCT1G V 1.5 V V OL V V OH 0.3 V Product data sheet Rev December of 17

10 V I negative pulse 0 V 90 % 10 % t W t f t r t r t f V I positive pulse 0 V 10 % 90 % t W G VI DUT VO RL S1 open RT CL 001aad983 Test data is given in Table 11. Definitions for test circuit: R T = Termination resistance should be equal to output impedance Z o of the pulse generator. C L = Load capacitance including jig and probe capacitance. R L = Load resistance. S1 = Test selection switch. Fig 10. Test circuit for measuring switching times Table 11. Test data Type Input Load S1 position V I t r, t f C L R L t PHL, t PLH t PZH, t PHZ t PZL, t PLZ 74AHC1G66 GND to 3 ns 15 pf, 50 pf 1 kω open GND 74AHCT1G66 GND to 3 V 3 ns 15 pf, 50 pf 1 kω open GND 11.2 Additional dynamic characteristics Table 12. Additional dynamic characteristics for 74AHC1G66 and 74AHCT1G66 GND = 0 V; t r = t f = 3.0 ns; C L = 50 pf; unless otherwise specified. All typical values are measured at T amb =25 C. Symbol Parameter Conditions Min Typ Max Unit THD total harmonic distortion f i = 1 khz; R L = 10 kω; see Figure 11 = 3.0 V to 3.6 V % = 4.5 V to 5.5 V % f i = 10 khz; R L = 10 kω; see Figure 11 = 3.0 V to 3.6 V; V I = 2.5 V % = 4.5 V to 5.5 V; V I = 4.0 V % Product data sheet Rev December of 17

11 Table 12. Additional dynamic characteristics for 74AHC1G66 and 74AHCT1G66 continued GND = 0 V; t r = t f = 3.0 ns; C L = 50 pf; unless otherwise specified. All typical values are measured at T amb =25 C. Symbol Parameter Conditions Min Typ Max Unit f ( 3dB) 3 db frequency response [1] Adjust input voltage V I to 0 dbm level (0 dbm =1 mw into 50 Ω). R L = 50 Ω; C L =10pF; see Figure 12 and 13 = 3.0 V to 3.6 V MHz = 4.5 V to 5.5 V MHz α iso isolation (OFF-state) R L = 600 Ω; f i = 1 MHz; see Figure 14 [1] = 3.0 V to 3.6 V; V I = 2.5 V db = 4.5 V to 5.5 V; V I = 4.0 V db 11.3 Test circuits and graphs V IH 2RL 10 µf Y/Z Z/Y V O fi 2RL CL D 001aai678 Fig 11. Test conditions: = 3.0 V to 3.6 V; V I = 2.5 V (p-p). = 4.5 V to 5.5 V; V I = 4.0 V (p-p). Test circuit for measuring total harmonic distortion V IH 2RL 0.1 µf Y/Z Z/Y V O fi 2RL CL db 001aai680 Fig 12. With f i = 1 MHz adjust the switch input voltage for a 0 dbm level at the switch output, (0 dbm = 1 mw into 50 Ω). Then increase the input f i frequency until the db meter reads 3 db. Test circuit for measuring the 3 db frequency response Product data sheet Rev December of 17

12 001aai837 4 (db) f i (Hz) Fig 13. Test conditions: = 4.5 V; GND = 0 V; R L =50Ω; R SOURC =1kΩ. Typical 3 db frequency response V IL 2RL 0.1 µf Y/Z Z/Y V O fi CL 2RL db 001aai679 Adjust the switch input voltage for a 0 dbm level (0 dbm = 1 mw into 600 Ω). Fig 14. Test circuit for measuring isolation (OFF-state) Product data sheet Rev December of 17

13 12. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm SOT353-1 D A X c y H v M A Z 5 4 A 2 A 1 (A 3 ) A θ 1 3 e b p e 1 w M detail X L p L mm scale DIMNSIONS (mm are the original dimensions) A UNIT A max. 1 mm A 2 A 3 b p c D (1) (1) e e 1 H L L p v w y Z (1) θ Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLIN VRSION RFRNCS IC JDC JITA SOT353-1 MO-203 SC-88A UROPAN PROJCTION ISSU DAT Fig 15. Package outline SOT353-1 (TSSOP5) Product data sheet Rev December of 17

14 Plastic surface-mounted package; 5 leads SOT753 D B A X y H v M A 5 4 Q A A1 c Lp e bp w M B detail X mm scale DIMNSIONS (mm are the original dimensions) UNIT A A 1 bp c D e H L p Q v w y mm OUTLIN VRSION RFRNCS IC JDC JITA UROPAN PROJCTION ISSU DAT SOT753 SC-74A Fig 16. Package outline SOT753 (SC-74A) Product data sheet Rev December of 17

15 13. Abbreviations Table 13. Acronym CDM CMOS DUT SD HBM MM Abbreviations Description Charged Device Model Complementary Metal-Oxide Semiconductor Device Under Test lectrostatic Discharge Human Body Model Machine Model 14. Revision history Table 14. Revision history Document ID Release date Data sheet status Change notice Supersedes Product data sheet - 74AHC_AHCT1G66_3 Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Package SOT353 changed to SOT353-1 in Table 1 and Figure 15. Quick Reference Data and Soldering sections removed. Section 2 Features updated. 74AHC_AHCT1G66_ Product specification - 74AHC_AHCT1G66_2 74AHC_AHCT1G66_ Product specification - 74AHC_AHCT1G66_1 74AHC_AHCT1G66_ Product specification - - Product data sheet Rev December of 17

16 15. Legal information 15.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail Disclaimers General Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. xposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Nexperia. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 16. Contact information For more information, please visit: For sales office addresses, please send an to: salesaddresses@nexperia.com Product data sheet Rev December of 17

17 17. Contents 1 General description Features Ordering information Marking Functional diagram Pinning information Pinning Pin description Functional description Limiting values Recommended operating conditions Static characteristics Test circuits ON resistance ON resistance test circuit and graphs Dynamic characteristics Waveforms and test circuit Additional dynamic characteristics Test circuits and graphs Package outline Abbreviations Revision history Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Contents For more information, please visit: For sales office addresses, please send an to: salesaddresses@nexperia.com Date of release: 18 December 2008

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