Electronic Properties of TANOS Flash Memory

Transcription

1 Elecroic Proeries of TANOS Flash Memory Vladimir Griseko Isiue of Semicoducor Physics Siberia Brach of Russia Academy of Scieces Novosibirsk

2 Oulook Marke of flash memory Pricial of flash memory High-k dielecric i flash memory Scalig of flash memory Microscoic hysics of flash Coclusio

3 Flash memory is ow drivig force i microelecroics The hisory of semicoducor busiess. Sice 1990 he FLASH memory domiaes o semicoducor marke.

4 Flash marke Flash memory is used for he savig ad rasfer of iformaio esecially i orable devices. Curre marke: digial camera ad video USB flash memory MP3 layer mobile hoe biomerical assor smar cards orable elecroics oys PC rier scaer auo commuicaio avigaio sace miliary. Fuure marke: oebooks e books elecroic aer elecroic books elecroic ebook elecroic ecycloedia. Flash memory marke er year ~ USD

5 Oeraio ricile of flash memory The basic ricile of flash memory is differe charge value accumulaed i memory ode. As memory ode i curre flash memory is used silico floaig gae or silico iride Iformaio mus be saved i flash device durig 10 years a 85 o C wihou eergy cosumio.

6 Scalig of flash memory The subsaioal disadvaage of floaig gae flash memory is arasiic ierferece durig iformaio wriig. Ierefece resuls i low reliabiliy of flash memory ad resricio for scalig o icrease memory volume > 64Gbie. This disadvaage is overcame i charge ra memory based o silico iride. Our oic for coracs bewee SEC ad ISP if he charge ra memory.

7 Saeme of a roblem The mai ricile of flash memory oeraio is he charge caure i he sorage medium of meal- oide - semicoducor field-effec rasisor. The silico iride is used as sorage maerial. The silico iride has a roery o localize a elecros ad holes wih gigaic lifeime o he dee ras. The memory eleme has srucure: oly-silico- oide- irideoide- semicoducor SONOS. The uel oide hickess of SONOS srucure is m. The disadvaage such memory eleme is a bad reliabiliy durig reeio. To elimiae his disadvaage he Al 2 O 3 dielecric ermiiviy ε=1o was roosed isead of SiO2 SANOS srucure see figure o he righ had.

8 Memory Flash Trasisor SONOS/TANOS High-k blockig dielecric allows o icrease he hickess of uel oide ad imrove he reeio of flash eleme увеличить a 85 С. Griseko VA Nasyrov KA Novikov YuN. A ew low volage fas SONOS memory wih high-k dielecrics. Absrac of he 12h Worksho o dielecrics i microelecroics November Greoble Frace V. A. Griseko K. A. Nasyrov Yu. N. Novikov A. L. Aseev S. Y. Yoo J.-W. Lee E.-H. Lee C. W. Kim A ew low volage fas SONOS memory wih high-k dielecric Solid-Sae Elecroics 47 N aes Russia Federaio o ew flash memory based o high-k dielecrics

9 The advaages of he SANOS i comariso wih SONOS The usig of high-k dielecrics wih high dielecric cosa as blockig oide lead o followig advaages: 1. he icreasig of elecric field i he uel oide lead o icreasig of curre ijecio figure o he righ had. This roery allows o use hicker uel oide whe he memory widow is fied which ca rovide he larger reeio ime i.e. reliabiliy ad decrease of rejecio rae of flash memory. 2. he decreasig of volage dro o he blockig oide leads o decreasig of arasiic ijecio of elecros ad holes form oly silico gae durig wrie/erase oeraios see figure o he righ had

10 Mahemaical model for simulaio of flash devices memory roeries ad charge rasor 1 P N j e r r υ σ υ σ + = P N r υ συ σ = 1 v P N v j e r σ σ + = P N r υ συ σ = 0 εε e F = 2 / sih 2 coh 2 e h T i h h h W W P kt W S I kt W S kt W P + = + = h T o i W W W S W ef m W m ef W P = = e * / h

11 Program Code STRUCTURE develoed i ISP for SEC These arameers defie he disribuios of door ad acceor sies o o oide/gae ierface These arameers defie he disribuios of door ad acceor sies o Si/boom oide ierface Now STRUCTURE ca simulae curreemeraure deedece ad TSC Srucure shows he iiial CV characerisic of samle

12 Wrie ad erase iformaio i TANOS: eerime ad simulaio 8 U FB V V 200 us + 17 V Si- SiO 2 35A Si 3 N 4 70A Al 2 O 3 160A TaN 200A V 20 ms -18 V T=20 C s

13 Comariso eerime ad ra assised hole ijecio model V U FB V V -14 V V -22 V -18 V -16 V sec K.A. Nasyrov S.S. Shaimeev V.A. Griseko Tra-Assised Tuelig Hole Ijecio i SiO2: Eerime ad Theory JETP v

14 Frekel model of ra ad hoo couled ra model K. A. Nasyrov V. A. Griseko Yu. N. Novikov E.-H. Lee S. Y. Yoo C. W. Kim Two- Bads Charge Trasor i Silico Niride due o Phoo-Assised Tra Ioizaio J. Al. Phys. V. 96 N

15 Curre as fucio of emeraure i silico iride: eerime ad simulaio K. A. Nasyrov V. A. Griseko M. K. Kim H. S. Chae S. D. Chae W. I. Ryu J. H. Sok J. W. Lee B. M. Kim Charge Trasor Mechaism i Meal-Niride-Oide Silico Srucures IEEE Elecro Device Leers V. 23 N

16 Curre-volage characerisics of memory ode-silico iride i TANOS A.V. Vishyakov Yu.N. Novikov V.A. Griseko K.A. Nasyrov The charge rasor mechaism i silico iride: Muli-hoo ra ioizaio Solid- Sae Elecroics V. 53 N

17 Naure of memory ras i silico iride of flash devices Elecro localizaio Hole localizaio S.S. Nekrashevich V.V. VasilevA.V. Shaoshikov V.A. Griseko Elecroic srucure of memory ras i silico iride Microelecroic Egieerig 86 N

18 Charge rasor i Al2O3 N. Novikov V.A. Griseko K.A. Nasyrov Charge rasor mechaism i amorhous alumia Al. Phys. Le

19 Poolumiescece of Al2O3 eied by sychroro radiaio DESY Gamburg Germay Phoolumiescece eergy idicae o eisece of oyge vacacies i Al2O3 T.V. Perevalov O.E. Teresheko V.A. Griseko V.A. Pusovarov A.P. Yelisseyev Chaji Park Jeog Hee Ha Choogma Lee Oyge Deficiecy Defecs i Amorhous Al2O3 J. Al. Phys. v

20 Elecro Eergy Loss Secroscoy of a-al2o3 T.V. Perevalov A.V. Shaoshikov V.A. Griseko Elecroic srucure of bulk ad defecs alfa- ad gamma-al2o3 Microelecroic Egieerig March 2009.

21 Elecroic Srucure of Al2O3

22 Bad Srucure ad Effecive masses i α-al2o3 Bad Srucure of α-al2o m * m 0 Effecive masses ofelecros m e ad holes m h Direcio * m e * m h Г-А [ Г-А ] 0.39 Г-А Г-K

23 Coclusio The localizaio effec i silico iride of TANOS is relaed o ecess silico Si-Si bods or Si clusers The defecs resosible for he lumiescece of amorhous Al2O3 are oyge vacacies The elecro ras resosible for he charge The elecro ras resosible for he charge rasor i amorhous Al2O3 are oyge vacacies

24 Thak You