Bipolar Transistor WS 2011

Size: px
Start display at page:

Download "Bipolar Transistor WS 2011"

Transcription

1 Institut für Integrierte Systeme Integrated Systems Laboratory Bipolar Transistor WS Introduction In this exercise we want to simulate the IV characteristics of a bipolar transistor and draw the Gummel plot and current gain. Additionally, the device shall be optimized with the help of simulation by changing the base doping. The bipolar transistor is one of the key devices in discrete and integrated circuits. Modifications are being used in power electronics IGBTs). In integrated circuits fast switching times are realized by bipolar transistors; here CMOS and bipolar technologies are integrated on chip BiCMOS). A bipolar transistor is a pnp- or a npn-structure, where each region has an electrical contact. The middle region is very thin which enables the interaction of the two pn-junctions that s why a bipolar transistor is more than the series connection of two diodes). In Fig. 1 the structure of a pnp-transistor is shown schematically. V I p + W n p I K VK IB V B Figure 1: Principle structure of a pnp-transistor. The heavily doped p-region p + ) is called emitter, the moderately doped n-layer is called base, and the lowly doped p-region is the collector. We denote by I K the current which flows into the collector and by V K the potential at the collector contact. Base and emitter quantities are labeled likewise. Currents can be split Ted in electron and hole contributions, e.g. I K = I K,n + I K,p. Kirchhoff s law connects all currents, I + I B + I K = 0 For voltages between two contacts we use the notation V B = V V B. The emitter injection efficiency factor is the hole contribution of the emitter current majority carriers), γ = I,p /I. As the emitter is heavily p-doped, the current is made up of holes almost exclusively, i.e. γ 1. The base transport factor is the part of the emitter hole current that reaches the collector, α T = I K,p /I,p,

2 it is also approximately 1. The common-base current gain is the product of both, α 0 = γα T. Hence the collector current can be written as I K = α 0 I + I K,n, 1) where I K,n is the leakage current of the reversed-biased base-collector junction. For the computation of the IV characteristics we make the following simplifications: We assume abrupt transitions between space charge regions and neutral regions. p- and n-regions are homogeneously doped. Generation and recombination in the space charge region are neglected. The concentration of majority carriers is assumed to be constant in each neutral region. The series resistance of the neutral regions is neglected. In particular, we use the boundary values of the minority carrier densities at the edges of the space charge regions, n 0) = n 0 qv B/) p B 0) = p 0 B qv B /) p B W) = p 0 B qv KB /) n K W) = n 0 K qv KB /) Here we have defined coordinates in such a way that the width of the space charge layers has been neglected, i.e. we consider them small compared to W. With this boundary conditions and with the general solution of the drift-diffusion equation in the neutral regions n n 0 p = C x/ ) + C + x/ ) with the diffusion length = D n τ n ) one obtains n x) n 0 = n 0 p 0 B p B x) p 0 B = sinh W/L p ) n K x) n 0 K = n0 K ) ] x { ) From this we obtain the emitter currents 2I,n = I,p = qd n A dn dx 0) = qd nan 0 qd p A dp B dx 0) = ) ) ] ] ) W x qd p Ap 0 B L p sinh W/L p ) { x sinh ) ] L p ) + ) ] sinh ) ] ) W cosh + 1 L p 2) )} W x L p 3) )} 4) and the collector currents by simply interchanging with K in above ressions. A is the active cross-sectional area of the transistor in the yz-plane. 2

3 Starting with these formulas, we now may compute characteristic parameters of the transistor, e.g. the base transport factor 1 α T coshw/l p ) 1 W 2 2L 2 p where we have assumed qv B /) 1 qv KB /) which means nothing more than qv B and qv KB shall be large compared to, and V KB shall be negative). We see that a thin base is necessary for a large α T. In the same limit we obtain for the emitter efficiency γ 1 + D n n 0 L p D p p 0 tanh W ) 1 B L p In circuit applications the common emitter configuration is most often used, where the emitter contact is grounded and the base and collector potentials are related to the emitter. With such a topology one can achieve a gain > 1. With 1) we can write the collector current in the common emitter configuration as I K = α 0 I B + I K ) + I K,n. 5) The common emitter current gain is defined as follows: β 0 I K I B. If we resolve 2) for I K, divide by I B and set α T 1 which is well fulfilled for todays transistors), the gain will only depend on the emitter efficiency. β 0 = α 0 = γ 1 α 0 1 γ = D p p 0 ) ) B W D n n 0 coth p0 B 1 L p L p n 0 N W N B W The current gain increases with rising ratio between emitter and base doping. After this rather accumulated theory you just need to copy the necessary input files into your home directory, >> mkdir biptrans >> mkdir tecplot_macro >> cp ~hlbe/biptrans/* biptrans/ >> cp ~hlbe/tecplot_macro/cut.mcr tecplot_macro/ >> cp ~hlbe/.alias. >> source.alias >> cd biptrans Let s start with the practical part. 2 Task 1: Gummel Plot We want to simulate the stationary IV curve. First, the emitter-collector voltage is ramped from 0 to 2.5 V, i.e. the transistor is driven into its working point. Then the base voltage is ramped from 3

4 0 to 1 V. Have a look at the Solve Section in the input file biptrans_des.cmd. Start the Sentaurus Structure ditor with the following command: sde biptrans_mdr Return The name of the device to be edited is handed to sde as an parameter. The program will automatically load the boundary file biptrans_mdr.bnd and the command file biptrans_mdr.cmd. To build the mesh you have to click mesh build mesh in the drop down menu bar. A new dialog box will open and ask for a file name where to save the grid data. nter bip as file name and choose Mesh as meshing engine, leave everything else as it is and confirm by pressing Build Mesh. The program will take care of file extensions. Now you can see the structure of the device. At the bottom there is the collector with the collector contact, top right you find the heavily-doped emitter and in-between the base which is contacted top left. The critical region of a bipolar transistor is the base, therefore the base region must be refined more than the other regions to obtain correct electron and hole currents. You can check that this was already accounted for in the command file. Leavesde and do not save changes to the model. Now we can start the simulation with sdevice biptrans_des.cmd Return. When the simulation is finished, you should plot the collector current and the base current as a function of the base voltage. For that, start the inspection tool inspect with inspect gummel_bip_des.plt & Return These two IV-curves are called Gummel plot. Now we want to plot the current gain. Select New... in inspect under Curves and try to plot the ratio I K /I B. Select the Y right axis as y-axis for the gain with linear scale. Answer the following questions: i) What is the value of the maximum of the gain? ii) At which base voltage has the gain its maximum? iii) Compare the maximum gain with the ratio of the doping concentrations between emitter and base. Which value is larger and why? iv) Do not close inspect, since you can just update this plot by pressing simulations. ) after the next 3 Task 2: Device Optimization by Simulation As we have seen in the Introduction, the common emitter current gain depends on the ratio of doping concentrations between emitter and base β 0 N N B see the last formula in the Introduction). On one hand one wants do increase the doping density in the base to minimize its resistance. On the other hand the doping level in the base must not be too high, in order to avoid a degradation of the current gain. We let the emitter doping unchanged and will try to optimize the gain by changing the base doping. Vary the base doping in the limits 2e17 cm 3 to 1e18 cm 3. Do the following: 1. Open the command-file biptrans_mdr.cmd with an editor e.g. emacs or gedit) 4

5 2. You will find in this file on line 77 the following statements: Function = GaussPeakPos = 0.1, PeakVal = 2e+17, StdDev = 0.06) 3. The base doping is set with PeakVal = 2e Set the PeakVal to a value in the range from 2e17 to 1e Save the changes and generate the new SDVIC input files with sde -e -l sde_batch.scm Return 6. Run the simulation with sdevice biptrans_des.cmd Return 7. Plot the gain as in task 1. Find the base doping in the range from 2e17 cm 3 to 1e18 cm 3, where the gain becomes maximum. Answer the following questions: i) What is the value of this base doping? ii) How large is the maximum current gain for this doping level? iii) What happens when you further decrease the base doping concentration and why? What happens when you increase the base doping beyond 1e18 cm 3 and why? 5

Recitation 17: BJT-Basic Operation in FAR

Recitation 17: BJT-Basic Operation in FAR Recitation 17: BJT-Basic Operation in FAR BJT stands for Bipolar Junction Transistor 1. Can be thought of as two p-n junctions back to back, you can have pnp or npn. In analogy to MOSFET small current

More information

Semiconductor Physics Problems 2015

Semiconductor Physics Problems 2015 Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible

More information

CLASS 3&4. BJT currents, parameters and circuit configurations

CLASS 3&4. BJT currents, parameters and circuit configurations CLASS 3&4 BJT currents, parameters and circuit configurations I E =I Ep +I En I C =I Cp +I Cn I B =I BB +I En -I Cn I BB =I Ep -I Cp I E = I B + I C I En = current produced by the electrons injected from

More information

EE105 - Fall 2006 Microelectronic Devices and Circuits

EE105 - Fall 2006 Microelectronic Devices and Circuits EE105 - Fall 2006 Microelectronic Devices and Circuits Prof. Jan M. Rabaey (jan@eecs) Lecture 21: Bipolar Junction Transistor Administrative Midterm Th 6:30-8pm in Sibley Auditorium Covering everything

More information

Introduction to Power Semiconductor Devices

Introduction to Power Semiconductor Devices ECE442 Power Semiconductor Devices and Integrated Circuits Introduction to Power Semiconductor Devices Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Semiconductor Devices Applications System Ratings

More information

Device Physics: The Bipolar Transistor

Device Physics: The Bipolar Transistor Monolithic Amplifier Circuits: Device Physics: The Bipolar Transistor Chapter 4 Jón Tómas Guðmundsson tumi@hi.is 2. Week Fall 2010 1 Introduction In analog design the transistors are not simply switches

More information

Lecture 17 - The Bipolar Junction Transistor (I) Forward Active Regime. April 10, 2003

Lecture 17 - The Bipolar Junction Transistor (I) Forward Active Regime. April 10, 2003 6.012 - Microelectronic Devices and Circuits - Spring 2003 Lecture 17-1 Lecture 17 - The Bipolar Junction Transistor (I) Contents: Forward Active Regime April 10, 2003 1. BJT: structure and basic operation

More information

Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

More information

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2

More information

Lecture 35 - Bipolar Junction Transistor (cont.) November 27, Current-voltage characteristics of ideal BJT (cont.)

Lecture 35 - Bipolar Junction Transistor (cont.) November 27, Current-voltage characteristics of ideal BJT (cont.) 6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 35-1 Lecture 35 - Bipolar Junction Transistor (cont.) November 27, 2002 Contents: 1. Current-voltage characteristics of ideal BJT (cont.)

More information

ELEC 3908, Physical Electronics, Lecture 17. Bipolar Transistor Injection Models

ELEC 3908, Physical Electronics, Lecture 17. Bipolar Transistor Injection Models LC 3908, Physical lectronics, Lecture 17 Bipolar Transistor njection Models Lecture Outline Last lecture looked at qualitative operation of the BJT, now want to develop a quantitative model to predict

More information

Spring Semester 2012 Final Exam

Spring Semester 2012 Final Exam Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters

More information

6.012 Electronic Devices and Circuits

6.012 Electronic Devices and Circuits Page 1 of 1 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.12 Electronic Devices and Circuits Exam No. 1 Wednesday, October 7, 29 7:3 to 9:3

More information

Lecture 19 - p-n Junction (cont.) October 18, Ideal p-n junction out of equilibrium (cont.) 2. pn junction diode: parasitics, dynamics

Lecture 19 - p-n Junction (cont.) October 18, Ideal p-n junction out of equilibrium (cont.) 2. pn junction diode: parasitics, dynamics 6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 19-1 Lecture 19 - p-n Junction (cont.) October 18, 2002 Contents: 1. Ideal p-n junction out of equilibrium (cont.) 2. pn junction diode:

More information

Technology Computer Aided Design (TCAD) Laboratory. Lecture 2, A simulation primer

Technology Computer Aided Design (TCAD) Laboratory. Lecture 2, A simulation primer Technology Computer Aided Design (TCAD) Laboratory Lecture 2, A simulation primer [Source: Synopsys] Giovanni Betti Beneventi E-mail: gbbeneventi@arces.unibo.it ; giobettibeneventi@gmail.com Office: Engineering

More information

Electronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices

Electronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage

More information

Lecture 17 The Bipolar Junction Transistor (I) Forward Active Regime

Lecture 17 The Bipolar Junction Transistor (I) Forward Active Regime Lecture 17 The Bipolar Junction Transistor (I) Forward Active Regime Outline The Bipolar Junction Transistor (BJT): structure and basic operation I V characteristics in forward active regime Reading Assignment:

More information

BJT - Mode of Operations

BJT - Mode of Operations JT - Mode of Operations JTs can be modeled by two back-to-back diodes. N+ P N- N+ JTs are operated in four modes. HO #6: LN 251 - JT M Models Page 1 1) Forward active / normal junction forward biased junction

More information

figure shows a pnp transistor biased to operate in the active mode

figure shows a pnp transistor biased to operate in the active mode Lecture 10b EE-215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the

More information

ECE-305: Spring 2018 Final Exam Review

ECE-305: Spring 2018 Final Exam Review C-305: Spring 2018 Final xam Review Pierret, Semiconductor Device Fundamentals (SDF) Chapters 10 and 11 (pp. 371-385, 389-403) Professor Peter Bermel lectrical and Computer ngineering Purdue University,

More information

Introduction to Transistors. Semiconductors Diodes Transistors

Introduction to Transistors. Semiconductors Diodes Transistors Introduction to Transistors Semiconductors Diodes Transistors 1 Semiconductors Typical semiconductors, like silicon and germanium, have four valence electrons which form atomic bonds with neighboring atoms

More information

ECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed)

ECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed) ECE-342 Test 2 Solutions, Nov 4, 2008 6:00-8:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free

More information

ECE 340 Lecture 31 : Narrow Base Diode Class Outline:

ECE 340 Lecture 31 : Narrow Base Diode Class Outline: ECE 340 Lecture 31 : Narrow Base Diode Class Outline: Narrow-Base Diodes Things you should know when you leave Key Questions What is a narrow-base diode? How does current flow in a narrow-base diode? Quick

More information

Lecture 27: Introduction to Bipolar Transistors

Lecture 27: Introduction to Bipolar Transistors NCN www.nanohub.org ECE606: Solid State Devices Lecture 27: Introduction to ipolar Transistors Muhammad Ashraful Alam alam@purdue.edu Alam ECE 606 S09 1 ackground E C E C ase! Point contact Germanium transistor

More information

ECE 305 Fall Final Exam (Exam 5) Wednesday, December 13, 2017

ECE 305 Fall Final Exam (Exam 5) Wednesday, December 13, 2017 NAME: PUID: ECE 305 Fall 017 Final Exam (Exam 5) Wednesday, December 13, 017 This is a closed book exam. You may use a calculator and the formula sheet at the end of this exam. Following the ECE policy,

More information

Physics of Semiconductors 8 th

Physics of Semiconductors 8 th Physics of Semiconductors 8 th 2016.6.6 Shingo Katsumoto Department of Physics, Institute for Solid State Physics University of Tokyo Review of pn junction Estimation of builtin potential Depletion layer

More information

Lecture 18 - The Bipolar Junction Transistor (II) Regimes of Operation. November 10, 2005

Lecture 18 - The Bipolar Junction Transistor (II) Regimes of Operation. November 10, 2005 6.012 - Microelectronic Devices and ircuits - Fall 2005 Lecture 18-1 Lecture 18 - The ipolar Junction Transistor (II) ontents: 1. Regimes of operation. Regimes of Operation November 10, 2005 2. Large-signal

More information

Forward-Active Terminal Currents

Forward-Active Terminal Currents Forward-Active Terminal Currents Collector current: (electron diffusion current density) x (emitter area) diff J n AE qd n n po A E V E V th ------------------------------ e W (why minus sign? is by def.

More information

Institute of Solid State Physics. Technische Universität Graz. Exam. Feb 2, 10:00-11:00 P2

Institute of Solid State Physics. Technische Universität Graz. Exam. Feb 2, 10:00-11:00 P2 Technische Universität Graz nstitute of Solid State Physics Exam Feb 2, 10:00-11:00 P2 Exam Four questions, two from the online list. Calculator is ok. No notes. Explain some concept: (tunnel contact,

More information

Memories Bipolar Transistors

Memories Bipolar Transistors Technische Universität Graz nstitute of Solid State Physics Memories Bipolar Transistors Technische Universität Graz nstitute of Solid State Physics Exams February 5 March 7 April 18 June 27 Exam Four

More information

Electronic Devices and Circuits Lecture 5 - p-n Junction Injection and Flow - Outline

Electronic Devices and Circuits Lecture 5 - p-n Junction Injection and Flow - Outline 6.012 - Electronic Devices and Circuits Lecture 5 - p-n Junction Injection and Flow - Outline Review Depletion approimation for an abrupt p-n junction Depletion charge storage and depletion capacitance

More information

Current mechanisms Exam January 27, 2012

Current mechanisms Exam January 27, 2012 Current mechanisms Exam January 27, 2012 There are four mechanisms that typically cause currents to flow: thermionic emission, diffusion, drift, and tunneling. Explain briefly which kind of current mechanisms

More information

DC and AC modeling of minority carriers currents in ICs substrate

DC and AC modeling of minority carriers currents in ICs substrate DC and AC modeling of minority carriers currents in ICs substrate Camillo Stefanucci, Pietro Buccella, Maher Kayal and Jean-Michel Sallese Swiss Federal Institute of Technology Lausanne, Switzerland MOS-AK

More information

Bipolar junction transistor operation and modeling

Bipolar junction transistor operation and modeling 6.01 - Electronic Devices and Circuits Lecture 8 - Bipolar Junction Transistor Basics - Outline Announcements Handout - Lecture Outline and Summary; Old eam 1's on Stellar First Hour Eam - Oct. 8, 7:30-9:30

More information

Lecture 17. The Bipolar Junction Transistor (II) Regimes of Operation. Outline

Lecture 17. The Bipolar Junction Transistor (II) Regimes of Operation. Outline Lecture 17 The Bipolar Junction Transistor (II) Regimes of Operation Outline Regimes of operation Large-signal equivalent circuit model Output characteristics Reading Assignment: Howe and Sodini; Chapter

More information

Fundamentals of Semiconductor Physics

Fundamentals of Semiconductor Physics Fall 2007 Fundamentals of Semiconductor Physics 万 歆 Zhejiang Institute of Modern Physics xinwan@zimp.zju.edu.cn http://zimp.zju.edu.cn/~xinwan/ Transistor technology evokes new physics The objective of

More information

Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions

Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions Author manuscript, published in "Microelectronics Reliability vol.47 (7) pp.173-1734" Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions

More information

Modeling and Analysis of Full-Chip Parasitic Substrate Currents

Modeling and Analysis of Full-Chip Parasitic Substrate Currents Modeling and Analysis of Full-Chip Parasitic Substrate Currents R. Gillon, W. Schoenmaker September 11, 2017 Rev. 2.0 1 Outline Objectives Challenges SPX solver Solutions l Compact Modeling (ONSEMI) l

More information

6.012 Electronic Devices and Circuits

6.012 Electronic Devices and Circuits Page 1 of 12 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits FINAL EXAMINATION Open book. Notes: 1. Unless

More information

Electronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208 Department of EECE

Electronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208   Department of EECE Electronic Circuits Bipolar Junction Transistors Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of Precedent Class Explain the Operation of the Zener Diode Explain Applications

More information

12. Memories / Bipolar transistors

12. Memories / Bipolar transistors Technische Universität Graz Institute of Solid State Physics 12. Memories / Bipolar transistors Jan. 9, 2019 Technische Universität Graz Institute of Solid State Physics Exams January 31 March 8 May 17

More information

EE105 Fall 2015 Microelectronic Devices and Circuits: Semiconductor Fabrication and PN Junctions

EE105 Fall 2015 Microelectronic Devices and Circuits: Semiconductor Fabrication and PN Junctions EE105 Fall 2015 Microelectronic Devices and Circuits: Semiconductor Fabrication and PN Junctions Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 pn Junction p-type semiconductor in

More information

Lecture 15 - The pn Junction Diode (I) I-V Characteristics. November 1, 2005

Lecture 15 - The pn Junction Diode (I) I-V Characteristics. November 1, 2005 6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 15-1 Lecture 15 - The pn Junction Diode (I) I-V Characteristics November 1, 2005 Contents: 1. pn junction under bias 2. I-V characteristics

More information

The Devices. Jan M. Rabaey

The Devices. Jan M. Rabaey The Devices Jan M. Rabaey Goal of this chapter Present intuitive understanding of device operation Introduction of basic device equations Introduction of models for manual analysis Introduction of models

More information

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits Spring 2008 MIDTERM EXAMINATION #1 Time

More information

( )! N D ( x) ) and equilibrium

( )! N D ( x) ) and equilibrium ECE 66: SOLUTIONS: ECE 66 Homework Week 8 Mark Lundstrom March 7, 13 1) The doping profile for an n- type silicon wafer ( N D = 1 15 cm - 3 ) with a heavily doped thin layer at the surface (surface concentration,

More information

ECE-305: Spring 2018 Exam 2 Review

ECE-305: Spring 2018 Exam 2 Review ECE-305: Spring 018 Exam Review Pierret, Semiconductor Device Fundamentals (SDF) Chapter 3 (pp. 75-138) Chapter 5 (pp. 195-6) Professor Peter Bermel Electrical and Computer Engineering Purdue University,

More information

16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE. Energy Band Diagram of Conductor, Insulator and Semiconductor:

16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE. Energy Band Diagram of Conductor, Insulator and Semiconductor: 16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE Energy bands in Intrinsic and Extrinsic silicon: Energy Band Diagram of Conductor, Insulator and Semiconductor: 1 2 Carrier transport: Any motion

More information

Shot Noise in pn Junction Diodes and Transistors

Shot Noise in pn Junction Diodes and Transistors Chapter 6 Shot Noise in pn Junction Diodes and Transistors Shockley s 1949 paper heralded a new era in the history of semiconductor device physics and engineering[1]. Basic physical processes of a pn junction

More information

Lecture 16 - The pn Junction Diode (II) Equivalent Circuit Model. April 8, 2003

Lecture 16 - The pn Junction Diode (II) Equivalent Circuit Model. April 8, 2003 6.012 - Microelectronic Devices and Circuits - Spring 2003 Lecture 16-1 Lecture 16 - The pn Junction Diode (II) Equivalent Circuit Model April 8, 2003 Contents: 1. I-V characteristics (cont.) 2. Small-signal

More information

EE 466/586 VLSI Design. Partha Pande School of EECS Washington State University

EE 466/586 VLSI Design. Partha Pande School of EECS Washington State University EE 466/586 VLSI Design Partha Pande School of EECS Washington State University pande@eecs.wsu.edu Lecture 8 Power Dissipation in CMOS Gates Power in CMOS gates Dynamic Power Capacitance switching Crowbar

More information

Lecture 10 - Carrier Flow (cont.) February 28, 2007

Lecture 10 - Carrier Flow (cont.) February 28, 2007 6.720J/3.43J Integrated Microelectronic Devices - Spring 2007 Lecture 10-1 Lecture 10 - Carrier Flow (cont.) February 28, 2007 Contents: 1. Minority-carrier type situations Reading assignment: del Alamo,

More information

Lecture 18 - The Bipolar Junction Transistor (II) Regimes of Operation April 19, 2001

Lecture 18 - The Bipolar Junction Transistor (II) Regimes of Operation April 19, 2001 6.012 - Microelectronic Devices and ircuits - Spring 2001 Lecture 18-1 Lecture 18 - The ipolar Junction Transistor (II) Regimes of Operation April 19, 2001 ontents: 1. Regimes of operation. 2. Large-signal

More information

Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

More information

L03: pn Junctions, Diodes

L03: pn Junctions, Diodes 8/30/2012 Page 1 of 5 Reference:C:\Users\Bernhard Boser\Documents\Files\Lib\MathCAD\Default\defaults.mcd L03: pn Junctions, Diodes Intrinsic Si Q: What are n, p? Q: Is the Si charged? Q: How could we make

More information

SOME USEFUL NETWORK THEOREMS

SOME USEFUL NETWORK THEOREMS APPENDIX D SOME USEFUL NETWORK THEOREMS Introduction In this appendix we review three network theorems that are useful in simplifying the analysis of electronic circuits: Thévenin s theorem Norton s theorem

More information

Semiconductor Junctions

Semiconductor Junctions 8 Semiconductor Junctions Almost all solar cells contain junctions between different materials of different doping. Since these junctions are crucial to the operation of the solar cell, we will discuss

More information

ELEC 3908, Physical Electronics, Lecture 18. The Early Effect, Breakdown and Self-Heating

ELEC 3908, Physical Electronics, Lecture 18. The Early Effect, Breakdown and Self-Heating ELEC 3908, Physical Electronics, Lecture 18 The Early Effect, Breakdown and Self-Heating Lecture Outline Previous 2 lectures analyzed fundamental static (dc) carrier transport in the bipolar transistor

More information

Chapter 9 Bipolar Junction Transistor

Chapter 9 Bipolar Junction Transistor hapter 9 ipolar Junction Transistor hapter 9 - JT ipolar Junction Transistor JT haracteristics NPN, PNP JT D iasing ollector haracteristic and Load Line ipolar Junction Transistor (JT) JT is a three-terminal

More information

Digital Integrated CircuitDesign

Digital Integrated CircuitDesign Digital Integrated CircuitDesign Lecture 5a Bipolar Transistor Dep. Region Neutral Base n(0) b B C n b0 P C0 P e0 P C xn 0 xp 0 x n(w) b W B Adib Abrishamifar EE Department IUST Contents Bipolar Transistor

More information

Lecture 16 The pn Junction Diode (III)

Lecture 16 The pn Junction Diode (III) Lecture 16 The pn Junction iode (III) Outline I V Characteristics (Review) Small signal equivalent circuit model Carrier charge storage iffusion capacitance Reading Assignment: Howe and Sodini; Chapter

More information

Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr.

Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr. Semiconductor Devices and Circuits Fall 2003 Midterm Exam Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering Name: Mat. -Nr.: Guidelines: Duration of the Midterm: 1 hour The exam is a closed

More information

Junction Bipolar Transistor. Characteristics Models Datasheet

Junction Bipolar Transistor. Characteristics Models Datasheet Junction Bipolar Transistor Characteristics Models Datasheet Characteristics (1) The BJT is a threeterminal device, terminals are named emitter, base and collector. Small signals, applied to the base,

More information

CHAPTER 4: P-N P N JUNCTION Part 2. M.N.A. Halif & S.N. Sabki

CHAPTER 4: P-N P N JUNCTION Part 2. M.N.A. Halif & S.N. Sabki CHAPTER 4: P-N P N JUNCTION Part 2 Part 2 Charge Storage & Transient Behavior Junction Breakdown Heterojunction CHARGE STORAGE & TRANSIENT BEHAVIOR Once injected across the junction, the minority carriers

More information

Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions

Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions Adel Benmansour, Stephane Azzopardi, Jean-Christophe Martin, Eric Woirgard To cite this

More information

Chapter 2. - DC Biasing - BJTs

Chapter 2. - DC Biasing - BJTs Chapter 2. - DC Biasing - BJTs Objectives To Understand : Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented

More information

ELEC 3908, Physical Electronics, Lecture 19. BJT Base Resistance and Small Signal Modelling

ELEC 3908, Physical Electronics, Lecture 19. BJT Base Resistance and Small Signal Modelling ELEC 3908, Physical Electronics, Lecture 19 BJT Base Resistance and Small Signal Modelling Lecture Outline Lecture 17 derived static (dc) injection model to predict dc currents from terminal voltages This

More information

Getting J e (x), J h (x), E(x), and p'(x), knowing n'(x) Solving the diffusion equation for n'(x) (using p-type example)

Getting J e (x), J h (x), E(x), and p'(x), knowing n'(x) Solving the diffusion equation for n'(x) (using p-type example) 6.012 - Electronic Devices and Circuits Lecture 4 - Non-uniform Injection (Flow) Problems - Outline Announcements Handouts - 1. Lecture Outline and Summary; 2. Thermoelectrics Review Thermoelectricity:

More information

CHAPTER 2 AN OVERVIEW OF TCAD SIMULATOR AND SIMULATION METHODOLOGY

CHAPTER 2 AN OVERVIEW OF TCAD SIMULATOR AND SIMULATION METHODOLOGY 15 CHAPTER 2 AN OVERVIEW OF TCAD SIMULATOR AND SIMULATION METHODOLOGY In this chapter TCAD and the various modules available in the TCAD simulator have been discussed. The simulation methodologies to extract

More information

Sample Exam # 2 ECEN 3320 Fall 2013 Semiconductor Devices October 28, 2013 Due November 4, 2013

Sample Exam # 2 ECEN 3320 Fall 2013 Semiconductor Devices October 28, 2013 Due November 4, 2013 Sample Exam # 2 ECEN 3320 Fall 203 Semiconductor Devices October 28, 203 Due November 4, 203. Below is the capacitance-voltage curve measured from a Schottky contact made on GaAs at T 300 K. Figure : Capacitance

More information

GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering

GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering NAME: GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering ECE 4430 First Exam Closed Book and Notes Fall 2002 September 27, 2002 General Instructions: 1. Write on one side of

More information

Lecture 20 - p-n Junction (cont.) October 21, Non-ideal and second-order effects

Lecture 20 - p-n Junction (cont.) October 21, Non-ideal and second-order effects 6.70J/3.43J - Integrated Microelectronic Devices - Fall 00 Lecture 0-1 Lecture 0 - p-n Junction (cont.) October 1, 00 Contents: 1. Non-ideal and second-order effects Reading assignment: del Alamo, Ch.

More information

(Refer Slide Time: 03:41)

(Refer Slide Time: 03:41) Solid State Devices Dr. S. Karmalkar Department of Electronics and Communication Engineering Indian Institute of Technology, Madras Lecture - 25 PN Junction (Contd ) This is the 25th lecture of this course

More information

A Simplified, Analytical, One-Dimensional Model for Saturation Operation of the Bipolar Transistor

A Simplified, Analytical, One-Dimensional Model for Saturation Operation of the Bipolar Transistor 82 A Simplified, Analytical, One-Dimensional Model for Saturation Operation of the Bipolar Transistor G.T. Wright and P.P. Frangos Electronic and Electrical Engineering Department, University of Birmingham,

More information

Most matter is electrically neutral; its atoms and molecules have the same number of electrons as protons.

Most matter is electrically neutral; its atoms and molecules have the same number of electrons as protons. Magnetism Electricity Magnetism Magnetic fields are produced by the intrinsic magnetic moments of elementary particles associated with a fundamental quantum property, their spin. -> permanent magnets Magnetic

More information

Diodes. anode. cathode. cut-off. Can be approximated by a piecewise-linear-like characteristic. Lecture 9-1

Diodes. anode. cathode. cut-off. Can be approximated by a piecewise-linear-like characteristic. Lecture 9-1 Diodes mplest nonlinear circuit element Basic operation sets the foundation for Bipolar Junction Transistors (BJTs) Also present in Field Effect Transistors (FETs) Ideal diode characteristic anode cathode

More information

Diodes. EE223 Digital & Analogue Electronics Derek Molloy 2012/2013.

Diodes. EE223 Digital & Analogue Electronics Derek Molloy 2012/2013. Diodes EE223 Digital & Analogue Electronics Derek Molloy 2012/2013 Derek.Molloy@dcu.ie Diodes: A Semiconductor? Conductors Such as copper, aluminium have a cloud of free electrons weak bound valence electrons

More information

Devices. chapter Introduction. 1.2 Silicon Conductivity

Devices. chapter Introduction. 1.2 Silicon Conductivity chapter 1 Devices 1.1 Introduction The properties and performance of analog bicmos integrated circuits are dependent on the devices used to construct them. This chapter is a review of the operation of

More information

R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition. Figures for Chapter 6

R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition. Figures for Chapter 6 R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition Figures for Chapter 6 Free electron Conduction band Hole W g W C Forbidden Band or Bandgap W V Electron energy Hole Valence

More information

Holes (10x larger). Diode currents proportional to minority carrier densities on each side of the depletion region: J n n p0 = n i 2

Holes (10x larger). Diode currents proportional to minority carrier densities on each side of the depletion region: J n n p0 = n i 2 Part V. (40 pts.) A diode is composed of an abrupt PN junction with N D = 10 16 /cm 3 and N A =10 17 /cm 3. The diode is very long so you can assume the ends are at x =positive and negative infinity. 1.

More information

Spin-polarized current amplification and spin injection in magnetic bipolar transistors

Spin-polarized current amplification and spin injection in magnetic bipolar transistors Spin-polarized current amplification and spin injection in magnetic bipolar transistors Jaroslav Fabian Institute for Theoretical Physics, Karl-Franzens University, Universitätsplatz 5, 8010 Graz, Austria

More information

(e V BC/V T. α F I SE = α R I SC = I S (3)

(e V BC/V T. α F I SE = α R I SC = I S (3) Experiment #8 BJT witching Characteristics Introduction pring 2015 Be sure to print a copy of Experiment #8 and bring it with you to lab. There will not be any experiment copies available in the lab. Also

More information

Lecture 0. EE206 Electronics I

Lecture 0. EE206 Electronics I Lecture 0 Course Overview EE206 Electronics I Course description: Theory, characteristics and operation of diodes, bipolar junction transistors and MOSFET transistors. When: Tue Thu 10:30-12:20 (Lectures)

More information

PN Junctions. Lecture 7

PN Junctions. Lecture 7 Lecture 7 PN Junctions Kathy Aidala Applied Physics, G2 Harvard University 10 October, 2002 Wei 1 Active Circuit Elements Why are they desirable? Much greater flexibility in circuit applications. What

More information

PN Junction

PN Junction P Junction 2017-05-04 Definition Power Electronics = semiconductor switches are used Analogue amplifier = high power loss 250 200 u x 150 100 u Udc i 50 0 0 50 100 150 200 250 300 350 400 i,u dc i,u u

More information

PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS

PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS Tennessee Technological University Wednesday, October 30, 013 1 Introduction Chapter 4: we considered the

More information

Section 5.4 BJT Circuits at DC

Section 5.4 BJT Circuits at DC 12/3/2004 section 5_4 JT Circuits at DC 1/1 Section 5.4 JT Circuits at DC Reading Assignment: pp. 421-436 To analyze a JT circuit, we follow the same boring procedure as always: ASSUME, ENFORCE, ANALYZE

More information

Material Eg (ev) Si 1.12 GaAs 1.43 CdSe 1.73 GaP 2.26 SiC 2.86 GaN 3.2 CeO ZnO 3.3 TiO2 3.4 InSnO Y2O3 5.6 ZrO2 5-7 AlN

Material Eg (ev) Si 1.12 GaAs 1.43 CdSe 1.73 GaP 2.26 SiC 2.86 GaN 3.2 CeO ZnO 3.3 TiO2 3.4 InSnO Y2O3 5.6 ZrO2 5-7 AlN Lectures 1& (Power Module) This power module will cover an introduction to WBG semiconductors and the simulation of power devices. The module is split into four lectures that cover the following topics:

More information

ECE-305: Fall 2016 Minority Carrier Diffusion Equation (MCDE)

ECE-305: Fall 2016 Minority Carrier Diffusion Equation (MCDE) ECE-305: Fall 2016 Minority Carrier Diffusion Equation (MCDE) Professor Peter Bermel Electrical and Computer Engineering Purdue University, West Lafayette, IN USA pbermel@purdue.edu Pierret, Semiconductor

More information

3 Minority carrier profiles (the hyperbolic functions) Consider a

3 Minority carrier profiles (the hyperbolic functions) Consider a Microelectronic Devices and Circuits October 9, 013 - Homework #3 Due Nov 9, 013 1 Te pn junction Consider an abrupt Si pn + junction tat as 10 15 acceptors cm -3 on te p-side and 10 19 donors on te n-side.

More information

Chapter 2 - DC Biasing - BJTs

Chapter 2 - DC Biasing - BJTs Objectives Chapter 2 - DC Biasing - BJTs To Understand: Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented

More information

SOLUTIONS: ECE 606 Homework Week 10 Mark Lundstrom. Purdue University. (Revised 3/29/13)

SOLUTIONS: ECE 606 Homework Week 10 Mark Lundstrom. Purdue University. (Revised 3/29/13) ECE- 66 SOLUTIOS: ECE 66 Homework Week 1 Mark Lundstrom (Revised 3/9/13) 1) In a forward- biased P junction under low- injection conditions, the QFL s are aroximately flat from the majority carrier region

More information

Choice of V t and Gate Doping Type

Choice of V t and Gate Doping Type Choice of V t and Gate Doping Type To make circuit design easier, it is routine to set V t at a small positive value, e.g., 0.4 V, so that, at V g = 0, the transistor does not have an inversion layer and

More information

PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS

PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS Tennessee Technological University Monday, November 11, 013 1 Introduction Chapter 4: we considered the semiconductor

More information

Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium September 20, 2005

Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium September 20, 2005 6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 4-1 Contents: Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium September 20, 2005

More information

Objective: The purpose of these notes is to familiarize students with semiconductors and devices including the P-N junction, and the transistors.

Objective: The purpose of these notes is to familiarize students with semiconductors and devices including the P-N junction, and the transistors. - 1-1/15/02C:\lec320.doc H.L.Kwok SEMICONDUCTOR MATERIALS AND DEVICES by H.L. Kwok Objective: The purpose of these notes is to familiarize students with semiconductors and devices including the P-N junction,

More information

01 01 Intro to Course

01 01 Intro to Course ECE 474 Spring 2011 Day Date Lecture Chapter Topics M 10 Jan 01 01 Intro to Course Physical structures of crystal systems that are important for devices W 12 02 01 How to quantify physical structures of

More information

EE 230 Lecture 31. THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR

EE 230 Lecture 31. THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR EE 23 Lecture 3 THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR Quiz 3 Determine I X. Assume W=u, L=2u, V T =V, uc OX = - 4 A/V 2, λ= And the number is? 3 8 5 2? 6 4 9 7 Quiz 3

More information

Field-Effect (FET) transistors

Field-Effect (FET) transistors Field-Effect (FET) transistors References: Barbow (Chapter 8), Rizzoni (chapters 8 & 9) In a field-effect transistor (FET), the width of a conducting channel in a semiconductor and, therefore, its current-carrying

More information

Objective: The purpose of these notes is to familiarize students with semiconductors and devices including the P-N junction, and the transistors.

Objective: The purpose of these notes is to familiarize students with semiconductors and devices including the P-N junction, and the transistors. - 1-3/4/02C:\lec320.doc H.L.Kwok SEMICONDUCTOR MATERIALS AND DEVICES by H.L. Kwok Objective: The purpose of these notes is to familiarize students with semiconductors and devices including the P-N junction,

More information