CONTROL OF UNIFORMITY IN CAPACITIVELY COUPLED PLASMAS CONSIDERING EDGE EFFECTS*
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1 CONTROL OF UNIFORMITY IN CAPACITIVELY COUPLED PLASMAS CONSIDERING EDGE EFFECTS* Junqing Lu and Mark J. Kushner Department of Electrical and Computer Engineering at Urbana-Champaign AVS 2004 Session PS2-WeM3 *Supported by SRC and Applied Materials. AVS04_JLU00
2 AGENDA Edge effects in Capacitively Coupled Plasmas Description of the model Origins of the edge effects Conclusions AVS04_JLU01
3 EDGE EFFECTS IN CCPs Edge effects (the perturbation of features near the edge of the wafer) are an increasing concern as wafers increase in size and more product is at larger radius. Edge effects are ultimately produced by perturbation of reactant fluxes produced by Method of terminating wafer and matching to tool materials Chuck design Aspect ratio Flow characteristics AVS04_JLU02
4 INVESTIGATION OF EDGE EFFECTS To illustrate the consequences of tool design on edge effects, a computational investigation has been performed in an idealized CCP reactor: Focus ring placement Focus ring materials Gap Height A new 2-d plasma hydrodynamics model using an unstructured mesh was developed. 100 s mtorr Ar Pedestal Showerhead Wafer Focus Ring Outlet AVS04_JLU s V rf bias
5 2D PLASMA DYNAMICS MODEL 2d rectilinear or cylindrical unstructured mesh model. Poisson s equation for potential. Surface charge equation. Sources due to electron impact, heavy particle reactions, and secondary emission are included. Multi-fluid charged species transport equations are discretized using the Scharfetter-Gummel technique. Finite volume discretized set of governing equations is solved using Newton s method. Electron energy equation coupled with Boltzmann solution for electron transport coefficients. Secondary electrons are modeled by the Monte Carlo method. AVS04_JLU04
6 AREA WEIGHTED ION FLUX NONUNIFORMITY To assess edge effects, a nonuniformity factor is used: Integration over wafer Φ ave = Φ i i 2πr dr πr 2 i i Φ ave: area weighted average flux r i Φ i : flux to sub-area i dr i R α = i Φ ave Φ Φ ave i πr 2πr dr 2 i i α 0, = perfectly uniform > 0, nonuniform AVS04_JLU05
7 2D UNSTRUCTURED MESH The 2d triangular unstructured mesh was generated by Skymesh2, a commercial mesh generator. Wafer Plasma Pedestal Wafer Plasma Pedestal Focus Ring AVS04_JLU06
8 TIME AVERAGED T e and E/N FOR THE BASE CASE T e is slightly double peaked near the electrodes and > 4 ev. The E/N is large near the electrodes and almost 0 in the center of the reactor. T e (ev) The strong gradient in E/N near the wafer edge is caused by charging of the focus ring, which acts like a 2d capacitor. E/N (Td) AVS04_JLU mtorr Ar, 100 sccm 200 V, 10 MHz Showerhead to wafer distance (d) = 4 cm Dielectric constant of focus ring = 4.0
9 3 cm 4 cm BULK ELECTRON IMPACT SOURCE vs GAP HEIGHT Bulk electron impact source (cm -3 s -1 ) x Most of the electron impact ionization occurs in the presheath. For a small gap height of 3 cm, the two presheath ionization regions coalesce into one. 4.5 cm AVS04_JLU08 Ar, 100 mtorr, 200 V, 10 MHz The bulk electrons accounts for > 85% of the ionization. Island of ionization results from convergence of top and sidewall presheaths.
10 Ar + DENSITY vs GAP HEIGHT 3 cm Ar + (cm -3 ) x 10 8 As the gap decreases, axial diffusion losses increases while lateral diffusion is unaffected. 4 cm The Ar + density vs radius for smaller gaps therefore mirror ionization sources. 4.5 cm Larger gaps, with less axial loss, allow lateral diffusion to smooth ionization sources. AVS04_JLU09 Ar, 100 mtorr, 200 V, 10 MHz
11 Ar + FLUX vs GAP HEIGHT The overlapping of presheath electron sources is responsible for the large ion density and flux near the wafer edge with small gaps. As d increases, smoothing of electron sources by lateral diffusion improves flux uniformity. For very large d, presheath ionization sources separate and uniformity decreases. Ar, 100 mtorr, 200 V, 10 MHz AVS04_JLU10
12 Ar + FLUX NONUNIFORMITY vs GAP HEIGHT Uniformity of ion flux is controllable with gap height by engineering the overlap of presheath ionization regions. AVS04_JLU11 Ar, 100 mtorr, 200 V, 10 MHz
13 BULK ELECTRON IMPACT SOURCE vs PRESSURE Bulk electron impact source (cm -3 s -1 ) x mtorr Ar 200 mtorr Ar As pressure increases, ionization sources are more localized near the wafer due to local maximum in T e. The influence of the focus ring in localizing ionization is greater at higher pressures. 100 mtorr Ar AVS04_JLU V, 10 MHz
14 NORMALIZED Ar + DENSITY vs PRESSURE Ar [Ar + ] max (cm -3 ) 3.6 x mtorr Ar 200 mtorr Ar 1.8 x x 10 9 The more local ionization sources at higher pressure and the influence of the focus ring produce a more confined plasma. 100 mtorr Ar 200 V, 10 MHz AVS04_JLU13
15 Ar + FLUX vs PRESSURE In spite of increased uniformity at intermediate radii, decrease in flux at the very edge of wafer at large pressures potentially reduce overall uniformity. 200 V, 10 MHz AVS04_JLU14
16 Ar + DENSITY vs FOCUS RING HEIGHT Ar + (cm -3 ) x 10 8 The focus ring is a recombination surface for ions. Ring raised 0.5 cm When the focus ring is lowered, the Ar + expands and the Ar + density near the wafer edge increases. Baseline Ring lowered 1 cm Ar, 100 mtorr, 200 V, 10 MHz AVS04_JLU15
17 Ar + FLUX vs FOCUS RING HEIGHT Lowering the focus ring reduces the peak and increases the flux at the wafer edge due to the shifts in Ar + density. This could be beneficial or detrimental to the flux uniformity. Raising the focus ring above the wafer cuts off fluxes to the wafer edge and increases the nonuniformity. AVS04_JLU16 Ar, 100 mtorr, 200 V, 10 MHz
18 Ar + FLUX NONUNIFORMITY vs FOCUS RING HEIGHT In general, lower heights may be better. However, due to the complex structure of ion flux with height of focus ring, α may not capture subtle flux variations. Ar, 100 mtorr, 200 V, 10 MHz AVS04_JLU17
19 Ar + DENSITY vs FOCUS RING GAP Ar + (cm -3 ) x cm The focus ring gap has a surprisingly small effect on ion densities. 0.5 cm There is a slight broadening and shift of the Ar + density. Baseline case Ar, 100 mtorr, 200 V, 10 MHz AVS04_JLU18
20 Ar + FLUX vs FOCUS RING GAP Tuning of the ion flux uniformity can be achieved with the focus ring gap. Ar, 100 mtorr, 200 V, 10 MHz AVS04_JLU19
21 DIELECTRIC CONSTANT OF THE FOCUS RING The dominant factors for ion density profiles and ion flux uniformity are the diffusion loss, the density gradient, and the source and sink for ions. The displacement current through the focus ring is proportional to dielectric constant. Ar, 100 mtorr, 200 V, 10 MHz Under these conditions, the displacement current is small enough not to perturb total current. AVS04_JLU20 The only significant effect of the dielectric constant is the surface charges, which are shielded from the plasma by the sheath.
22 CONCLUSIONS Tuning of the ion flux uniformity, particularly near the edge, can be achieved by Regulation of gap and pressure Redesign of focus ring Adjustable height or placement of the focus ring could aid in having different processes performed in a single tool. AVS04_JLU21
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