Surface Characte i r i zat on LEED Photoemission Phot Linear optics

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1 Surface Characterization i LEED Photoemission Linear optics

2 Surface characterization with electrons MPS M.P. Seah, WA W.A. Dench, Surf. Interf. Anal. 1 (1979) 2

3 LEED low energy electron diffraction De Broglie wavelength: λ= h/(mv) g g /( ) For electrons: λ = 150 / E0 E0 in ev, λ in Å. For 100 ev electrons: λ(100) = 1.22 Å (low energy) Corresponds to atomic dimensions, similar to XRD

4 Analogy aogyto optical grating. gat g Constructive interference: Enhancement of intensity only in certain directions: n λ = d sinθ For 2D arrangement (plane lattice): scattering conditions have to be fulfilled in both directions. h,k (order)

5 20 ML Ge Ge on Si(111)7x77 Transition from 7x7 to 5x5 Si(111)7x7

6 Synchrotron radiation photoemission spectroscopy ISA Aarhus University Maximum Energy 580 MeV Max Current 250 ma Lifetime 15h hours SGM ev ev

7 Core levels Photoelectron spectroscopy Chemical reactions/mixing Growth modes Valence bands Electronic levels relevant for optics hν=130 ev hν Intensity (a arb. units) Al2p sp band Secondary electrons E F E vac Binding Energy(eV) Kinetic Energy (ev)

8 Wedge shaped metal film AFM Sample moved into shadow of shield. Evaporation rate ~1 ML per minute μ m Triangular domains ~200 nm Ag(111) LEED-pattern - only one type of domains 2 Scanning film thickness by moving wedge through laser or synchrotron beam ght (arb. units) Si i2p peak hei 25 Convolution fit of 20 Gauss beam and step 15 function d=150 μm ,80 38,85 38,90 38,95 39,00 Sample position (mm) Width of synchrotron beam

9 The Si(111) 7 7 structure Structure known fromstm and various spectroscopies 12 adatoms 6 rest atoms Surface states: Occupied S 1 S 2 S 3 Empty U 1 U eV 0.8 ev eV 0.5 ev 17eV 1.7

10 Si2p core levels 24 Si2p 130 ev 7x7 Inte nsity (a arb. un nits) Si(IV) Si(III) Si(II) Si(I) 100 L O 2 Decomposition of spectra Sum Bulk Ad-atoms Rest atoms 4 Background Experiments Binding energy (ev) 7x7: Bulk Ad atom Rest atom Si surface oxide: Bulk Oxidation stages

11 The Si(111) 7 7 structure Structure known from STM and various spectroscopies: 12 adatoms + 6 rest atoms Surface states: Occupied: S 1 03eV 0.3 ev, S 2 08eV 0.8 ev, S 3 17eV 1.7 Empty: U ev, U ev 20 Si(111)7x7 38 ev Inte ensity (arb b. units) θ=10 o S 3 S 2 300K 450K S Binding Energy (ev)

12 Film growth Si2p spectra In ntensity (arb. units s) Growth at 170 K No annealing 130 ev 7x7 Growth at 170 K Annealing at room temperature ) (arb. units Intensity ,1 Bulk 300 K Surface 300 K Bulk 170 K Surface 170 K Binding Energy (ev) , Coverage (ML) Growth at 170 K leads to exponential decay of Si2p levels with ~5Å decay rate. Room temperature annealing of the film leads to growth of large atomically flat domains. Areaswith low Agcoverage areformed. Annealing

13 Au on 6 ML Cu/Si(111) Au4f spectra Inte ensity (a arb. uun its) ML Au on Si(111) Au4f Reacted Bulk ML Au on 6ML Cu/Si(111) Surface Binding Energy (ev) Au on Si(111): Reacted component at higher h BE Au Si Reacted layer Au on Cu/Si(111): Surface component at lower BE Au Si 6 ML Cu

14 Valence band spectra Excitation energy typically ev Binding energy: 0 10 ev sp electrons in Ag, Au, Cu, Al Intens sity (arb b. units) ML Au ML d bands 47 ev SP bands Surface state 5 6 ML Cu/Si(111) Binding Energy (ev)

15 STM Difference STM images of occupied surface states on a Si(111)7x77 surface: a) topographic image b) adatom states at 0.35eV c) dangling gbond states at 0.8eV d) back bond states at 1.7eV [15]. Topographic image of Si(111)7x7 surface as recorded using Scanning Tunneling Microscope (STM) with a bias voltage of + 2 V [8].

16 Reflection-Anisotropy Spectroscopy (RAS) Wolfgang Richter, TU Berlin

17 RAS - Probe for solid-liquid interface UHV Au(110) Th l d l Three-layer model McIntyre and Aspnes, Surf. Sci. 24, 417 (1971 Ambient Surface Bulk Electrolyte ΔR R exp = d λ [ AΔε '' B Δε '] 8π s s Surface states at 2.5 and 3.7 ev Sheridan et al. PRL 85, 4618 (2000)

18 Surface optics - Differential reflection f 1 ~100 Hz f 2 ~10 Hz Selci et al. JVST A 5, 327 (1987)

19 Ellipsometry - Optical properties of Si E 0 +E₁ E 2 0 ε R ε I Aspnes and Studna, PRB 27,, 985 (1983)

20 Depth sensitivity of linear optics The probe depth can be varied through the wavelength

21 SDR Si(111)2 1 Difference between clean and oxygen exposed sample Excitation of surface states Anisotropy confirm chain model

22 SDR on Si(111)7 7 Experiments 1.7 ev: Ad atom dangling bonds 2 3 ev: Ad atombackbonds to bulk states Tight binding model Noguez et al. PRL 76, 4923 (1996)

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