Diffusion. Diffusion = the spontaneous intermingling of the particles of two or more substances as a result of random thermal motion
|
|
- Daisy Watkins
- 5 years ago
- Views:
Transcription
1 Diffusion Diffusion = the spontaneous intermingling of the particles of two or more substances as a result of random thermal motion
2 Fick s First Law Γ ΔN AΔt Γ = flux ΔN = number of particles crossing cross sectional area A in time Δt Γ = D dc dx C = concentration D = diffusion coefficient Diffusion: Concepts and Solved Problems ( S.O. Kasap, : v.1.1) An e-booklet
3 Diffusion Coefficient D = D o exp E A kt or D Q = D exp diff o RT D = diffusion coefficient D O = constant E A or Q diff = activation energy k = Boltzmann constant, R = gas constant T = temperature [E A ] =ev k = ev K -1 [Q diff ] = kj mol -1 R = J K -1 mol -1
4 Diffusion of impurities in crystals U = PE(x) U A* E A U A = U B A A* B A A* B X Displacement Fig. 1.8: Diffusion of an interstitial impurity atom in a crystal from one void to a neighboring void. The impurity atom at position A must posses an energy E A to push the host atoms away and move into the neighboring void at B. Boltzmann s distribution n E N E =C exp kt n E = number of impurities with energy E N = total number of particles T = temperature k = Boltzmann s constant From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap ( McGraw-Hill, 00) Probability (E>E A ) = Number of impurities with E>E A Total number of impurities υ Frequency of jumps = = = Frequency of attempt along AB Probability (E>E A ) E A n E EA de = Aexp( ) kt E A = activation energy A = dimensionless constant EA = Aν 0 exp( ) kt
5 Random walk of impurity atom inside crystalline lattice and root mean square (rms) displacement θ = 180 θ = 90 θ = 70 θ = 0 y x a O X L O' After N jumps Fig. 1.9: An impurity atom has four site choices for diffusion to a neighboring interstitial vacancy. After N jumps, the impurity atom would have been displaced from the original position at O. From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap ( McGraw-Hill, 00) Y Total square displacement in X-direction after N jumps X X = a = 1 cos a L N ( θ ) + a cos ( θ ) a = 1 X + Y Y = a = 1 N a cos Total square displacement after N jumps However, N = υt Therefore L = a υt Dt N ( θ ) where υ = frequency of jumps N
6 Mean Square Displacement L = a ϑt = Dt ϑ = Aν exp( 0 EA ) kt L = distance, a = closest void to void separation, ϑ = frequency of jumps, t = time, D = diffusion coefficient = L /t. Diffusion Coefficient D = D o exp E A kt D = diffusion coefficient, D O = constant, E A = activation energy, k = Boltzmann constant, T = temperature
7 Diffusion of impurities in crystals E sd < E bd < E vd Diffusion: Diffusion and Oxidation ( S.O. Kasap, : v.1.1) An e-booklet
8 Purification of hydrogen D Q = D exp d o RT D 0 = m s -1 Q d = 4.6 kj mol -1 M at = g mol -1 ρ = 1 g cm -3 pre-exponential factor activation energy atomic mass of Pd density of Pd
9 Surface of crystal : passivation with hydrogen
10 k
11 Fick s Second Law D C( x, t) C( x, t) = x t C(x,t) = concentration, which depends on time and distance D Q = D exp d o RT = diffusion coefficient, where Q d = activation energy, R = gas constant, T = temperature, D 0 = constant.
12 Diffusion from unlimited supply C x t C x t D (, ) (, = ) x t C (0, t) = Solution C s C ( x,0) = C C (, t) = C 0 0 at the surface always at t=0 anywhere in the bulk always at far end erf (z) = error function erf ( z) = π z e 0 x dx erfc (z) = 1- erf (z)
13 Error and complimentary error functions erfc (z) = 1- erf (z)
14 Carburization of steel T s = C t = hours C 0 = 0.15 % C s = 1.5 % C(1mm, t) =? Qdiff D = Do exp RT D = m s -1 Q diff = 80.3 kj mol -1 pre-exponential factor activation energy
15 Carburization of steel : solution T s = C t = hours C 0 = 0.15 % C s = 1.5 % C(1mm, t) =? D 0 = m s -1 Q diff = 80.3 kj mol -1
16 Error and complimentary error functions erfc(0.84)=0.4 erf(0.84)=1-erfc(0.84) = 0.76
17 Diffusion from limited supply N 0 = total number of diffusing particles (cm - ) D = diffusion coefficient t = time Diffusion: Concepts and Solved Problems ( S.O. Kasap, : v.1.1) An e-booklet
18 Diffusion doping in semiconductor technology E hole e (a) (b) (c) Fig..5 (a) Thermal vibrations of the atoms rupture a bond and release a free electron into the crystal. A hole is left in the broken bond which has an effective positive charge. (b) An electron in a neighboring bond can jump and repair this bond and thereby create a hole in its original site; the hole has been displaced. (c) When a field is applied both holes and electrons contribute to electrical conduction. From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap ( McGraw-Hill, 00) [Ne] s p
19 Diffusion doping in semiconductor technology E hole e (a) (b) (c) Fig..5 (a) Thermal vibrations of the atoms rupture a bond and release a free electron into the crystal. A hole is left in the broken bond which has an effective positive charge. (b) An electron in a neighboring bond can jump and repair this bond and thereby create a hole in its original site; the hole has been displaced. (c) When a field is applied both holes and electrons contribute to electrical conduction. From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap ( McGraw-Hill, 00) [Ne] s p 3 n - doping with P
20 Diffusion doping in semiconductor technology E hole e (a) (b) (c) Fig..5 (a) Thermal vibrations of the atoms rupture a bond and release a free electron into the crystal. A hole is left in the broken bond which has an effective positive charge. (b) An electron in a neighboring bond can jump and repair this bond and thereby create a hole in its original site; the hole has been displaced. (c) When a field is applied both holes and electrons contribute to electrical conduction. From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap ( McGraw-Hill, 00) [He] s p 1 p - doping with B
21 Diffusion doping in semiconductor technology
22 Diffusion doping in semiconductor technology C C
23 Diffusion from limited supply positioned in the middle of sample N 0 = total number of diffusing particles D = diffusion coefficient t = time Diffusion: Concepts and Solved Problems ( S.O. Kasap, : v.1.1) An e-booklet
24 MOSFET (Metal-Oxide-Semiconductor Field-Effect-Transistor) Al OXYDATION SiO PHOTOLITHOGRAPHY Si Resist SiO Mask Negative resist DIFFUSION
25 Diffusion of boron through the opening in SiO Diffusion: Diffusion and Oxidation ( S.O. Kasap, : v.1.1) An e-booklet
26 Oxidation of silicon dry oxidation wet oxidation Diffusion: Diffusion and Oxidation ( S.O. Kasap, : v.1.1) An e-booklet
27 Stages of oxide growth O SiO Si crystal Si crystal Si crystal T I M E Initial linear growth x ~ t Parabolic growth x ~ t x -oxide thickness 0.45 μm Si 1 μm SiO Diffusion: Diffusion and Oxidation ( S.O. Kasap, : v.1.1) An e-booklet
28 Stages of oxide growth x = oxide thickness dx/dt = oxide growth rate C 0 C I = oxidant concentration on the surface = oxidant concentration on the interface Diffusion: Diffusion and Oxidation ( S.O. Kasap, : v.1.1) An e-booklet
29 Initial linear growth Si + O SiO - dry oxidation dx ~ rate of SiO volume growth ~ k[si][o dt ]~ k 1 C 0 C 0 [O ] Mass Action Law rate of reaction A+B C [ C] d dt = k[ A][ B] [A] = concentration of A k = constant x B = k1c0t + xi t A ( +τ ) where B/A = linear rate constant x i = initial oxide thickness and B 1 A E = K1 exp kt rate limiting factor is concentration of oxidant with E 1 ev / atom compare with energy of Si-Si bond breaking 1.8 ev / bond Diffusion: Concepts and Solved Problems ( S.O. Kasap, : v.1.1) An e-booklet
30 Parabolic growth in diffusion limited oxidation What is the rate of growth limiting factor? Diffusion of O to interface! Diffusion: Concepts and Solved Problems ( S.O. Kasap, : v.1.1) An e-booklet
31 Parabolic growth in diffusion limited oxidation Calculations of O diffusion flux to interface dx dc = KD dt dx xdx = KD( C 0 C1 )dt dc Γ = D dx x = x + KD C C ) t 0 ( 0 1 E = K exp kt B E (O ) = 1.4 ev/atom E (HO ) = 0.79 ev/atom Diffusion: Concepts and Solved Problems ( S.O. Kasap, : v.1.1) An e-booklet
32 Overall growth kinetics x 1/ A t + τ = 1+ 1 A / 4B where τ = x i + Ax B i t+τ << A / 4B t+τ >> A / 4B x B = t A ( +τ ) initial linear growth x x + = 0 Bt parabolic growth Diffusion: Concepts and Solved Problems ( S.O. Kasap, : v.1.1) An e-booklet
33 Oxidation rates for dry and wet oxidations dry oxidation wet oxidation
34 Oxidation rates for dry and wet oxidations linear = rate limiting factor is concentration of oxidant at the interface parabolic = rate limiting factor is diffusion of O to interface dry oxidation wet oxidation
35 Calculation of oxidation time (at pressure 1 atm.) x = 0.1 μm T = =1173 K t wet 0.6 hour t dry 13 hours
36 Calculations of oxidation time x t 1/ A t + τ = 1+ 1 A / 4B 1 A = x + x τ B B E = K exp kt B B 1 E = K A exp 1 kt τ = x i + t Ax B Experiment i Wet oxidation μm B = hr B A μm = hr τ = hr t wet 0.6 hour Dry oxidation μm B = hr B A μm = hr τ =.13hrs 10.8 hrs t dry 13 hours Diffusion: Concepts and Solved Problems ( S.O. Kasap, : v.1.1) An e-booklet
Introduction To Materials Science FOR ENGINEERS, Ch. 5. Diffusion. MSE 201 Callister Chapter 5
Diffusion MSE 201 Callister Chapter 5 1 Goals: Diffusion - how do atoms move through solids? Fundamental concepts and language Diffusion mechanisms Vacancy diffusion Interstitial diffusion Impurities Diffusion
More informationEE 143 Microfabrication Technology Fall 2014
EE 143 Microfabrication Technology Fall 2014 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 EE 143: Microfabrication
More informationThermal Oxidation of Si
Thermal Oxidation of General Properties of O 2 Applications of thermal O 2 Deal-Grove Model of Oxidation Thermal O 2 is amorphous. Weight Density = 2.20 gm/cm 3 Molecular Density = 2.3E22 molecules/cm
More informationLecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations
Lecture 1 OUTLINE Basic Semiconductor Physics Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Reading: Chapter 2.1 EE105 Fall 2007 Lecture 1, Slide 1 What is a Semiconductor? Low
More informationOxide growth model. Known as the Deal-Grove or linear-parabolic model
Oxide growth model Known as the Deal-Grove or linear-parabolic model Important elements of the model: Gas molecules (oxygen or water) are incident on the surface of the wafer. Molecules diffuse through
More informationCarriers Concentration, Current & Hall Effect in Semiconductors. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India
Carriers Concentration, Current & Hall Effect in Semiconductors 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India http://folk.uio.no/ravi/semi2013 Conductivity Charge
More informationSteady-state diffusion is diffusion in which the concentration of the diffusing atoms at
Chapter 7 What is steady state diffusion? Steady-state diffusion is diffusion in which the concentration of the diffusing atoms at any point, x, and hence the concentration gradient at x, in the solid,
More informationSection 7: Diffusion. Jaeger Chapter 4. EE143 Ali Javey
Section 7: Diffusion Jaeger Chapter 4 Surface Diffusion: Dopant Sources (a) Gas Source: AsH 3, PH 3, B 2 H 6 (b) Solid Source BN Si BN Si (c) Spin-on-glass SiO 2 +dopant oxide (d) Liquid Source. Fick s
More informationcollisions of electrons. In semiconductor, in certain temperature ranges the conductivity increases rapidly by increasing temperature
1.9. Temperature Dependence of Semiconductor Conductivity Such dependence is one most important in semiconductor. In metals, Conductivity decreases by increasing temperature due to greater frequency of
More informationMake sure the exam paper has 9 pages (including cover page) + 3 pages of data for reference
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences Spring 2006 EE143 Midterm Exam #1 Family Name First name SID Signature Make sure the exam paper
More informationDIFFUSION IN SOLIDS. IE-114 Materials Science and General Chemistry Lecture-5
DIFFUSION IN SOLIDS IE-114 Materials Science and General Chemistry Lecture-5 Diffusion The mechanism by which matter is transported through matter. It is related to internal atomic movement. Atomic movement;
More informationThermally Activated Processes
General Description of Activated Process: 1 Diffusion: 2 Diffusion: Temperature Plays a significant role in diffusion Temperature is not the driving force. Remember: DRIVING FORCE GRADIENT of a FIELD VARIALE
More informationDIFFUSION - Chapter 7
DIFFUSION - Chapter 7 Doping profiles determine many short-channel characteristics in MOS devices. Resistance impacts drive current. Scaling implies all lateral and vertical dimensions scale by the same
More informationAtoms, electrons and Solids
Atoms, electrons and Solids Shell model of an atom negative electron orbiting a positive nucleus QM tells that to minimize total energy the electrons fill up shells. Each orbit in a shell has a specific
More informationESE 372 / Spring 2013 / Lecture 5 Metal Oxide Semiconductor Field Effect Transistor
Metal Oxide Semiconductor Field Effect Transistor V G V G 1 Metal Oxide Semiconductor Field Effect Transistor We will need to understand how this current flows through Si What is electric current? 2 Back
More informationSelf-study problems and questions Processing and Device Technology, FFF110/FYSD13
Self-study problems and questions Processing and Device Technology, FFF110/FYSD13 Version 2016_01 In addition to the problems discussed at the seminars and at the lectures, you can use this set of problems
More informationAppendix 4. Appendix 4A Heat Capacity of Ideal Gases
Appendix 4 W-143 Appendix 4A Heat Capacity of Ideal Gases We can determine the heat capacity from the energy content of materials as a function of temperature. The simplest material to model is an ideal
More informationProperties of Error Function erf(z) And Complementary Error Function erfc(z)
Properties of Error Function erf(z) And Complementary Error Function erfc(z) z erf (z) π e -y dy erfc (z) 1 - erf (z) erf () erf( ) 1 erf(- ) - 1 erf (z) d erf(z) dz π z for z
More informationFabrication Technology, Part I
EEL5225: Principles of MEMS Transducers (Fall 2004) Fabrication Technology, Part I Agenda: Microfabrication Overview Basic semiconductor devices Materials Key processes Oxidation Thin-film Deposition Reading:
More informationDopant Diffusion. (1) Predeposition dopant gas. (2) Drive-in Turn off dopant gas. dose control. Doped Si region
Dopant Diffusion (1) Predeposition dopant gas dose control SiO Si SiO Doped Si region () Drive-in Turn off dopant gas or seal surface with oxide profile control (junction depth; concentration) SiO SiO
More informationSeptember 21, 2005, Wednesday
, Wednesday Doping and diffusion I Faster MOSFET requires shorter channel P + Poly Al Al Motivation Requires shallower source, drain Al P + Poly Al source drain Shorter channel length; yes, but same source
More informationKinetics. Rate of change in response to thermodynamic forces
Kinetics Rate of change in response to thermodynamic forces Deviation from local equilibrium continuous change T heat flow temperature changes µ atom flow composition changes Deviation from global equilibrium
More informationwater adding dye partial mixing homogenization time
iffusion iffusion is a process of mass transport that involves the movement of one atomic species into another. It occurs by ranom atomic jumps from one position to another an takes place in the gaseous,
More informationLecture 3 Semiconductor Physics (II) Carrier Transport
Lecture 3 Semiconductor Physics (II) Carrier Transport Thermal Motion Carrier Drift Carrier Diffusion Outline Reading Assignment: Howe and Sodini; Chapter 2, Sect. 2.4-2.6 6.012 Spring 2009 Lecture 3 1
More informationPHYS208 p-n junction. January 15, 2010
1 PHYS208 p-n junction January 15, 2010 List of topics (1) Density of states Fermi-Dirac distribution Law of mass action Doped semiconductors Dopinglevel p-n-junctions 1 Intrinsic semiconductors List of
More informationSemiconductor physics I. The Crystal Structure of Solids
Lecture 3 Semiconductor physics I The Crystal Structure of Solids 1 Semiconductor materials Types of solids Space lattices Atomic Bonding Imperfection and doping in SOLIDS 2 Semiconductor Semiconductors
More informationCharge Carriers in Semiconductor
Charge Carriers in Semiconductor To understand PN junction s IV characteristics, it is important to understand charge carriers behavior in solids, how to modify carrier densities, and different mechanisms
More informationCarriers Concentration and Current in Semiconductors
Carriers Concentration and Current in Semiconductors Carrier Transport Two driving forces for carrier transport: electric field and spatial variation of the carrier concentration. Both driving forces lead
More informationSolid State Electronics EC210 Arab Academy for Science and Technology AAST Cairo Fall Lecture 10: Semiconductors
Solid State Electronics EC210 Arab Academy for Science and Technology AAST Cairo Fall 2014 Lecture 10: Semiconductors Lecture Notes Prepared by: Dr. Amr Bayoumi, Dr. Nadia Rafat These PowerPoint color
More informationSemiconductor Device Physics
1 Semiconductor Device Physics Lecture 3 http://zitompul.wordpress.com 2 0 1 3 Semiconductor Device Physics 2 Three primary types of carrier action occur inside a semiconductor: Drift: charged particle
More informationESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems
ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Lec 6: September 14, 2015 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable
More informationEECS143 Microfabrication Technology
EECS143 Microfabrication Technology Professor Ali Javey Introduction to Materials Lecture 1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) Why Semiconductors? Conductors e.g
More informationQuiz #1 Practice Problem Set
Name: Student Number: ELEC 3908 Physical Electronics Quiz #1 Practice Problem Set? Minutes January 22, 2016 - No aids except a non-programmable calculator - All questions must be answered - All questions
More informationECE 442. Spring, Lecture -2
ECE 442 Power Semiconductor Devices and Integrated circuits Spring, 2006 University of Illinois at Chicago Lecture -2 Semiconductor physics band structures and charge carriers 1. What are the types of
More informationECE 142: Electronic Circuits Lecture 3: Semiconductors
Faculty of Engineering ECE 142: Electronic Circuits Lecture 3: Semiconductors Agenda Intrinsic Semiconductors Extrinsic Semiconductors N-type P-type Carrier Transport Drift Diffusion Semiconductors A semiconductor
More informationLecture 0. EE206 Electronics I
Lecture 0 Course Overview EE206 Electronics I Course description: Theory, characteristics and operation of diodes, bipolar junction transistors and MOSFET transistors. When: Tue Thu 10:30-12:20 (Lectures)
More informationIntroduction to Semiconductor Physics. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India
Introduction to Semiconductor Physics 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India http://folk.uio.no/ravi/cmp2013 Review of Semiconductor Physics Semiconductor fundamentals
More informationpn JUNCTION THE SHOCKLEY MODEL
The pn Junction: The Shockley Model ( S. O. Kasap, 1990-001) 1 pn JUNCTION THE SHOCKLEY MODEL Safa Kasap Department of Electrical Engineering University of Saskatchewan Canada Although the hole and its
More informationESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems
ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Lec 6: September 18, 2017 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable
More informationChapter 2. Electronics I - Semiconductors
Chapter 2 Electronics I - Semiconductors Fall 2017 talarico@gonzaga.edu 1 Charged Particles The operation of all electronic devices is based on controlling the flow of charged particles There are two type
More informationEE143 Fall 2016 Microfabrication Technologies. Evolution of Devices
EE143 Fall 2016 Microfabrication Technologies Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1-1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) 1-2 1 Why
More informationLecture 150 Basic IC Processes (10/10/01) Page ECE Analog Integrated Circuits and Systems P.E. Allen
Lecture 150 Basic IC Processes (10/10/01) Page 1501 LECTURE 150 BASIC IC PROCESSES (READING: TextSec. 2.2) INTRODUCTION Objective The objective of this presentation is: 1.) Introduce the fabrication of
More informationSection 12: Intro to Devices
Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals Bond Model of Electrons and Holes Si Si Si Si Si Si Si Si Si Silicon
More informationSection 12: Intro to Devices
Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si
More information! Previously: simple models (0 and 1 st order) " Comfortable with basic functions and circuits. ! This week and next (4 lectures)
ESE370: CircuitLevel Modeling, Design, and Optimization for Digital Systems Lec 6: September 14, 2015 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable
More informationEE 212 FALL ION IMPLANTATION - Chapter 8 Basic Concepts
EE 212 FALL 1999-00 ION IMPLANTATION - Chapter 8 Basic Concepts Ion implantation is the dominant method of doping used today. In spite of creating enormous lattice damage it is favored because: Large range
More informationELECTRONIC I Lecture 1 Introduction to semiconductor. By Asst. Prof Dr. Jassim K. Hmood
ELECTRONIC I Lecture 1 Introduction to semiconductor By Asst. Prof Dr. Jassim K. Hmood SOLID-STATE ELECTRONIC MATERIALS Electronic materials generally can be divided into three categories: insulators,
More informationISSUES TO ADDRESS...
Chapter 12: Electrical Properties School of Mechanical Engineering Choi, Hae-Jin Materials Science - Prof. Choi, Hae-Jin Chapter 12-1 ISSUES TO ADDRESS... How are electrical conductance and resistance
More informationLecture 15: Optoelectronic devices: Introduction
Lecture 15: Optoelectronic devices: Introduction Contents 1 Optical absorption 1 1.1 Absorption coefficient....................... 2 2 Optical recombination 5 3 Recombination and carrier lifetime 6 3.1
More informationECE 250 Electronic Devices 1. Electronic Device Modeling
ECE 250 Electronic Devices 1 ECE 250 Electronic Device Modeling ECE 250 Electronic Devices 2 Introduction to Semiconductor Physics You should really take a semiconductor device physics course. We can only
More information! Previously: simple models (0 and 1 st order) " Comfortable with basic functions and circuits. ! This week and next (4 lectures)
ESE370: CircuitLevel Modeling, Design, and Optimization for Digital Systems Lec 6: September 18, 2017 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable
More informationIntroduction to Semiconductor Devices
Physics 233 Experiment 48 Introduction to Semiconductor Devices References 1. G.W. Neudeck, The PN Junction Diode, Addison-Wesley MA 1989 2. Background notes (Appendix A) 3. Specification sheet for Diode
More information3.1 Absorption and Transparency
3.1 Absorption and Transparency 3.1.1 Optical Devices (definitions) 3.1.2 Photon and Semiconductor Interactions 3.1.3 Photon Intensity 3.1.4 Absorption 3.1 Absorption and Transparency Objective 1: Recall
More informationDetermination of properties in semiconductor materials by applying Matlab
Determination of properties in semiconductor materials by applying Matlab Carlos Figueroa. 1, Raúl Riera A. 2 1 Departamento de Ingeniería Industrial. Universidad de Sonora A.P. 5-088, Hermosillo, Sonora.
More informationMATHEMATICS OF DOPING PROFILES. C(x,t) t. = D 2 C(x,t) x 2. 4Dt dx '
EE43 MATHEMATICS OF DOPING PROFILES N. Cheung The diffusion equation with constant D : has the general solution: C(x,t) = C(x,t) = D 2 C(x,t) 4πDt F(x ' ) e -(x-x' ) 2 4Dt dx ' - where F(x') is the C(x,t)
More informationLecture 2 Electrons and Holes in Semiconductors
EE 471: Transport Phenomena in Solid State Devices Spring 2018 Lecture 2 Electrons and Holes in Semiconductors Bryan Ackland Department of Electrical and Computer Engineering Stevens Institute of Technology
More informationIntroduction to Semiconductor Devices
Physics 233 Experiment 48 Introduction to Semiconductor Devices References 1. G.W. Neudeck, The PN Junction Diode, Addison-Wesley MA 1989 2. Background notes (Appendix A) 3. Specification sheet for Diode
More informationReview of Semiconductor Fundamentals
ECE 541/ME 541 Microelectronic Fabrication Techniques Review of Semiconductor Fundamentals Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Page 1 Semiconductor A semiconductor is an almost insulating material,
More informationKey Words Student Paper, Electrical Engineering
A GUI Program for the Calculation of Mobility and Carrier Statistics in Semiconductors Daniel Barrett, University of Notre Dame Faculty Advisor: Dr. Debdeep Jena, University of Notre Dame Student Paper
More informationLecture 18 Molecular Motion and Kinetic Energy
Physical Principles in Biology Biology 3550 Fall 2017 Lecture 18 Molecular Motion and Kinetic Energy Monday, 2 October c David P. Goldenberg University of Utah goldenberg@biology.utah.edu Fick s First
More informationFinal Examination EE 130 December 16, 1997 Time allotted: 180 minutes
Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2
More informationLecture 8. Equations of State, Equilibrium and Einstein Relationships and Generation/Recombination
Lecture 8 Equations of State, Equilibrium and Einstein Relationships and Generation/Recombination Reading: (Cont d) Notes and Anderson 2 sections 3.4-3.11 Energy Equilibrium Concept Consider a non-uniformly
More informationEngineering 2000 Chapter 8 Semiconductors. ENG2000: R.I. Hornsey Semi: 1
Engineering 2000 Chapter 8 Semiconductors ENG2000: R.I. Hornsey Semi: 1 Overview We need to know the electrical properties of Si To do this, we must also draw on some of the physical properties and we
More informationEE 346: Semiconductor Devices
EE 346: Semiconductor Devices Lecture - 6 02/06/2017 Tewodros A. Zewde 1 DENSTY OF STATES FUNCTON Since current is due to the flow of charge, an important step in the process is to determine the number
More informationEECS130 Integrated Circuit Devices
EECS130 Integrated Circuit Devices Professor Ali Javey 8/30/2007 Semiconductor Fundamentals Lecture 2 Read: Chapters 1 and 2 Last Lecture: Energy Band Diagram Conduction band E c E g Band gap E v Valence
More informationEE301 Electronics I , Fall
EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials
More informationEE130: Integrated Circuit Devices
EE130: Integrated Circuit Devices (online at http://webcast.berkeley.edu) Instructor: Prof. Tsu-Jae King (tking@eecs.berkeley.edu) TA s: Marie Eyoum (meyoum@eecs.berkeley.edu) Alvaro Padilla (apadilla@eecs.berkeley.edu)
More informationSemiconductor Physics
Semiconductor Physics Motivation Is it possible that there might be current flowing in a conductor (or a semiconductor) even when there is no potential difference supplied across its ends? Look at the
More informationDiodes. anode. cathode. cut-off. Can be approximated by a piecewise-linear-like characteristic. Lecture 9-1
Diodes mplest nonlinear circuit element Basic operation sets the foundation for Bipolar Junction Transistors (BJTs) Also present in Field Effect Transistors (FETs) Ideal diode characteristic anode cathode
More informationChapter 1 Overview of Semiconductor Materials and Physics
Chapter 1 Overview of Semiconductor Materials and Physics Professor Paul K. Chu Conductivity / Resistivity of Insulators, Semiconductors, and Conductors Semiconductor Elements Period II III IV V VI 2 B
More informationLecture 3b. Bonding Model and Dopants. Reading: (Cont d) Notes and Anderson 2 sections
Lecture 3b Bonding Model and Dopants Reading: (Cont d) Notes and Anderson 2 sections 2.3-2.7 The need for more control over carrier concentration Without help the total number of carriers (electrons and
More informationMolecules and Condensed Matter
Chapter 42 Molecules and Condensed Matter PowerPoint Lectures for University Physics, Thirteenth Edition Hugh D. Young and Roger A. Freedman Lectures by Wayne Anderson Goals for Chapter 42 To understand
More informationSemiconductor-Detectors
Semiconductor-Detectors 1 Motivation ~ 195: Discovery that pn-- junctions can be used to detect particles. Semiconductor detectors used for energy measurements ( Germanium) Since ~ 3 years: Semiconductor
More informationECE 340 Lecture 6 : Intrinsic and Extrinsic Material I Class Outline:
ECE 340 Lecture 6 : Intrinsic and Extrinsic Material I Class Outline: Effective Mass Intrinsic Material Extrinsic Material Things you should know when you leave Key Questions What is the physical meaning
More informationSemiconductor Detectors are Ionization Chambers. Detection volume with electric field Energy deposited positive and negative charge pairs
1 V. Semiconductor Detectors V.1. Principles Semiconductor Detectors are Ionization Chambers Detection volume with electric field Energy deposited positive and negative charge pairs Charges move in field
More informationan introduction to Semiconductor Devices
an introduction to Semiconductor Devices Donald A. Neamen Chapter 6 Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor Introduction: Chapter 6 1. MOSFET Structure 2. MOS Capacitor -
More informationOxidation of Si. Why spend a whole lecture on oxidation of Si? GaAs has high m and direct band no oxide
Oxidation of Why spend a whole lecture on oxidation of? Ge has high m e, m h, Ge stable but no oxide GaAs has high m and direct band no oxide e Why? is stable down to 10-9 Torr, T > 900 C can be etched
More informationIon Implantation ECE723
Ion Implantation Topic covered: Process and Advantages of Ion Implantation Ion Distribution and Removal of Lattice Damage Simulation of Ion Implantation Range of Implanted Ions Ion Implantation is the
More informationConduction. Metals, Semiconductors and Interconnects. Fig 2.1
Conduction Metals, Semiconductors and Interconnects Fig 2.1 Metal interconnects are used in microelectronics to wire the devices within the chip, the intergraded circuit. Multilevel interconnects are used
More informationDiffusion. Diffusion. Diffusion in Solid Materials
Atoms movements in materials Diffusion Movement of atoms in solids, liquids and gases is very important Eamples: Hardening steel, chrome-plating, gas reactions, Si wafers.. etc. We will study: Atomic mechanisms
More informationElectrical Conduction in Ceramic Materials 1 Ref: Barsoum, Fundamentals of Ceramics, Ch7, McGraw-Hill, 2000
MME 467 Ceramics for Advanced Applications Lecture 19 Electrical Conduction in Ceramic Materials 1 Ref: Barsoum, Fundamentals of Ceramics, Ch7, McGraw-Hill, 2000 Prof. A. K. M. B. Rashid Department of
More informationElectrons, Holes, and Defect ionization
Electrons, Holes, and Defect ionization The process of forming intrinsic electron-hole pairs is excitation a cross the band gap ( formation energy ). intrinsic electronic reaction : null e + h When electrons
More informationSolid State Physics SEMICONDUCTORS - IV. Lecture 25. A.H. Harker. Physics and Astronomy UCL
Solid State Physics SEMICONDUCTORS - IV Lecture 25 A.H. Harker Physics and Astronomy UCL 9.9 Carrier diffusion and recombination Suppose we have a p-type semiconductor, i.e. n h >> n e. (1) Create a local
More informationFirst-Hand Investigation: Modeling of Semiconductors
perform an investigation to model the behaviour of semiconductors, including the creation of a hole or positive charge on the atom that has lost the electron and the movement of electrons and holes in
More information3.1 Introduction to Semiconductors. Y. Baghzouz ECE Department UNLV
3.1 Introduction to Semiconductors Y. Baghzouz ECE Department UNLV Introduction In this lecture, we will cover the basic aspects of semiconductor materials, and the physical mechanisms which are at the
More informationAtoms? All matters on earth made of atoms (made up of elements or combination of elements).
Chapter 1 Atoms? All matters on earth made of atoms (made up of elements or combination of elements). Atomic Structure Atom is the smallest particle of an element that can exist in a stable or independent
More informationLecture 2. Semiconductor Physics. Sunday 4/10/2015 Semiconductor Physics 1-1
Lecture 2 Semiconductor Physics Sunday 4/10/2015 Semiconductor Physics 1-1 Outline Intrinsic bond model: electrons and holes Charge carrier generation and recombination Intrinsic semiconductor Doping:
More informationMaterials and Devices in Electrical Engineering
Examination WS 02/03 Materials and Devices in Electrical Engineering Monday 17 th of March, 9:00 11:00, International Department, SR. 203 Notice 1. It is allowed to use any kind of aids (books, scripts,
More informationXing Sheng, 微纳光电子材料与器件工艺原理. Doping 掺杂. Xing Sheng 盛兴. Department of Electronic Engineering Tsinghua University
微纳光电子材料与器件工艺原理 Doping 掺杂 Xing Sheng 盛兴 Department of Electronic Engineering Tsinghua University xingsheng@tsinghua.edu.cn 1 Semiconductor PN Junctions Xing Sheng, EE@Tsinghua LEDs lasers detectors solar
More informationElectronics The basics of semiconductor physics
Electronics The basics of semiconductor physics Prof. Márta Rencz, Gergely Nagy BME DED September 16, 2013 The basic properties of semiconductors Semiconductors conductance is between that of conductors
More informationLECTURE 23. MOS transistor. 1 We need a smart switch, i.e., an electronically controlled switch. Lecture Digital Circuits, Logic
LECTURE 23 Lecture 16-20 Digital Circuits, Logic 1 We need a smart switch, i.e., an electronically controlled switch 2 We need a gain element for example, to make comparators. The device of our dreams
More informationSemiconductor Device Physics
1 Semiconductor Device Physics Lecture 1 http://zitompul.wordpress.com 2 0 1 3 2 Semiconductor Device Physics Textbook: Semiconductor Device Fundamentals, Robert F. Pierret, International Edition, Addison
More information1. Introduction of solid state 1.1. Elements of solid state physics:
1. Introduction of solid state 1.1. Elements of solid state physics: To understand the operation of many of the semiconductor devices we need, at least, an appreciation of the solid state physics of homogeneous
More informationECE611 / CHE611: Electronic Materials Processing Fall 2017 John Labram Solutions to Homework 2 Due at the beginning of class Thursday October 19 th
ECE611 / CHE611: Electronic Materials Processing Fall 017 John Labram Solutions to Homework Due at the beginning of class Thursday October 19 th Question 1 [3 marks]: a) Piranha solution consists of a
More informationDirect and Indirect Semiconductor
Direct and Indirect Semiconductor Allowed values of energy can be plotted vs. the propagation constant, k. Since the periodicity of most lattices is different in various direction, the E-k diagram must
More informationLecture 20: Semiconductor Structures Kittel Ch 17, p , extra material in the class notes
Lecture 20: Semiconductor Structures Kittel Ch 17, p 494-503, 507-511 + extra material in the class notes MOS Structure Layer Structure metal Oxide insulator Semiconductor Semiconductor Large-gap Semiconductor
More information8.1 Drift diffusion model
8.1 Drift diffusion model Advanced theory 1 Basic Semiconductor Equations The fundamentals of semiconductor physic are well described by tools of quantum mechanic. This point of view gives us a model of
More informationEE 5211 Analog Integrated Circuit Design. Hua Tang Fall 2012
EE 5211 Analog Integrated Circuit Design Hua Tang Fall 2012 Today s topic: 1. Introduction to Analog IC 2. IC Manufacturing (Chapter 2) Introduction What is Integrated Circuit (IC) vs discrete circuits?
More informationBasic Semiconductor Physics
6 Basic Semiconductor Physics 6.1 Introduction With this chapter we start with the discussion of some important concepts from semiconductor physics, which are required to understand the operation of solar
More informationESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems. Today MOS MOS. Capacitor. Idea
ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 9: September 26, 2011 MOS Model Today MOS Structure Basic Idea Semiconductor Physics Metals, insulators Silicon lattice
More information