Milko Jakšić Laboratory for ion beam interactions Division for experimental physics Ruđer Bošković Institute

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1 Milko Jakšić Laboratory for ion beam interactions Division for experimental physics Ruđer Bošković Institute Facilities IBIC Application examples

2 Ruđer Bošković Institute

3 Ruđer Bošković Institute.. MV MV HVE HVE Tanetron Tanetron accelerator accelerator MV MV EN EN Tanem Tanem Van e Graaff Van e Graaff accelerator accelerator PIXE/RBS Ion microprobe In-air PIXE Dualbeam irraiation IAEA beam line TOF ERDA PIXE crystal spectromete r Nuclear reactions

4 Ruđer Bošković Institute UNIUENESS: numerous processes emitte particles (nuclear reactions) - NRA γ rays (nuclear reactions) - PIGE Recoil nuclei (elastic scattering) - ERDA Transmitte ions (energy loss) - STIM Ion beam x-rays (ionization) - PIXE backscattere particles (elastic scattering) - RBS scattere particles (elastic scattering) TARGET / SAMPLE seconary electrons (ionization) - SEI light (ionization) - IL 2D imaging charge creation (ionization) - IBIC ERDA; RBS epth profiling

5 Terminal voltages. to 2 MV Ion sources sputtering, RF alphatross, uoplasmatron Goo selection of ion ranges / E/x!! Silicon I 27- Si 28 C 2 He 4 H Range(µm) E= MeV Range (µm) E= MeV

6 3 e j n e č o k o k s n o r t k e l e Cl O C Li He Electronic stopping 2 s m o t a 5 / 2 m c V e - H H e j n e č o k o n r a e l k u n 2 - Nuclear stopping e j n e č o k Cl O C Li He 3 V e k a n o i a j i g r e n e Ion Energy (kev)

7 25 um Transmission image of MeV C3+ through Cu gri Typical resolution um Best resolution.4 um

8 Maximum Maximumenergy energy5 5MeV MeV ME/q2 ME/q2 Beam Beamcurrents currents..fa fa Ion Ionhit hittime timecan canbe beetermine etermine by by~~ns nsresolution resolution

9 IBIC Al amorphous silicon IBIC - single ion technique for imaging of microscopic istribution of charge transport properties! - Imaging of grain bounaries, efects (such as islocations), electric fiel (polarization),... EFG silicon

10 IBIC - single ion technique for imaging of microscopic istribution of charge transport properties! - Imaging of grain bounaries, efects (such as islocations), electric fiel (polarization),... CVD iamon (997)

11 a) Ions lose their energy E/x b) Creation of charge pairs e/h c) Charge transport: Drift - in electric fiel Diffusion ) Inuce charge e) IBIC signal gubitak energije ionizacijom (ev/ion/a) 43 kev H.4 MeV He 2.5 MeV Li 4 MeV O 6.5 MeV O MeV Cl. x 4 2x 4 3x 4 4x 4 5x 4 6x 4 ubina u siliciju (A) V Incoming raiation V out electrons ions µm

12 Inuce current T= I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V.2. v.75.5 I Time

13 Inuce current T= I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time

14 Inuce current T=2 I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time

15 Inuce current T=3 I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time

16 Inuce current T=4 I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time

17 Inuce current T=5 I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time

18 Inuce current T=6 I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time

19 Inuce current T=7 I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time

20 Inuce current T=8 I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time

21 Inuce current T=9 I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time

22 Inuce current T= I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time

23 Inuce current T= I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time

24 Velocity; v = µε = /T R Mobility; µ= 2 /(T R *V Bias ) τ (t) = T I(t)t I I(t) = q v exp t τ I Time Time

25 TRIBIC time resolve IBIC (by cathoe) CZnTe 2 µ= trv 2 8 Electron Electron mobility: mobility: 2 µµe==78 78cm cm2/vs /Vs 6 4 VO(mV) 2 e V -2 V -4 V -8 V - V t(µs) Depenence on electric fiel Æ electron mobility

26 IBIC line scan (anoe to cathoe) CZnTe For CCE=% K 322 K 296 K 287 K 256 K 238 K 2 K 77 K.8.7 CCE (µτ) (µτ)ee=(.4)* =(.4)*-3cm cm2/v /V -5 2 (µτ) (µτ)h=* =*-5cm cm2/v /V h istance from anoe (channels) Depenence on temperature 275

27 TRIBIC time resolve IBIC CZnTe 2 58 K 67 K 89 K 29 K 29 K VO (mv) t (µs) Depenence on temperature Æ Ientification of efects

28 Irraiation of certain regions in test samples will increase efect concentration an ecrease IBIC signal Si pin ioe

29 CZnTe after 5 9 p/cm 2 after.5 p/cm 2 Mobility of efects (as in CZnTe) Irraiate area

30 CCE (arbitrary units) Li ions 2.5 MeV CCE (%) Time (secons) Recombination of efects in minutes Fluence ( 7 ) cm -2

31 CCE (%) Time (secons) Recombination of efects in CCE (%) CCE (%) Time (secons) Time (secons) Annealing 24 hours on 5 Measurements of recombinatio n lifetimes!

32 Si PIN ioe - irraiate by 9 fluences - by p, He, Li, Cl of 5 um range - teste by IBIC using protons

33 Si PIN ioe - irraiate by 9 fluences - by p, He, Li, Cl of 5 um range - teste by IBIC using p an He = + K Φ NIEL e ave

34 Diamon etectors mm2, 5 um thick Irraiation an IBIC tests by MeV C ions Si pin ioe sc CVD iamon

35 electrons Diamon etectors mm2, 5 um thick +/- 5 V bias Irraiation an IBIC tests by 8 MeV C ions holes

36 Support of Public an Inustrial Research using Ion beam Technology Transnational access Networking Joint research activities SPIRIT Partners: ForschungszentrumDresen-Rossenorf (FZD) CNRS CENBG Boreaux (CNRS) Katholieke Universiteit Leuven + IMEC (KUL) Jozef Stefan Institut Ljubljana (JSI) Universität er Buneswehr München + TUM (UBW) CEA JANNUS Saclay an CIMAP Caen (CEA) University of Surrey (SUR) Institute Tecnologico e Nuclear Lisboa (ITN) University e Pierre et Marie Curie (UPMC) Rujer Boskovic Institute Zagreb (RBI) Swiss Feeral Institute of Technology (ETHZ)

37 Damage profile of 6 MeV C ions in iamon (SRIM simulation) if the iamon lattice gets amage / istorte above a critical threshol, it converts to graphite upon thermal annealing graphite is a very ifferent material with respect to iamon: it is soft, electrically conuctive an etchable amage ensity threshol < 9 22 cm -3 (partial) recovery of pristine structure upon thermal annealing > 9 22 cm -3 conversion to a graphite-like phase upon thermal annealing

38 Implantation with three-imensional masking evaporation of Cr-Au ahesion layer eposition of semispherical Au contact mask implantation with scanning ion microbeam mask removal A: Cr layer B: Au layer C: Au contact mask D: scanning ion beam (6 MeV C) E: burie graphitic channel P. Olivero et al, Diamon Rel. Mat. (28)

39 AFM Electrical characterisation: 3 2 R = 3.5,.5 MΩ channels 2&3 + geometry Æ ρ =.9,. Ω cm

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