Milko Jakšić Laboratory for ion beam interactions Division for experimental physics Ruđer Bošković Institute
|
|
- Tyler Price
- 5 years ago
- Views:
Transcription
1 Milko Jakšić Laboratory for ion beam interactions Division for experimental physics Ruđer Bošković Institute Facilities IBIC Application examples
2 Ruđer Bošković Institute
3 Ruđer Bošković Institute.. MV MV HVE HVE Tanetron Tanetron accelerator accelerator MV MV EN EN Tanem Tanem Van e Graaff Van e Graaff accelerator accelerator PIXE/RBS Ion microprobe In-air PIXE Dualbeam irraiation IAEA beam line TOF ERDA PIXE crystal spectromete r Nuclear reactions
4 Ruđer Bošković Institute UNIUENESS: numerous processes emitte particles (nuclear reactions) - NRA γ rays (nuclear reactions) - PIGE Recoil nuclei (elastic scattering) - ERDA Transmitte ions (energy loss) - STIM Ion beam x-rays (ionization) - PIXE backscattere particles (elastic scattering) - RBS scattere particles (elastic scattering) TARGET / SAMPLE seconary electrons (ionization) - SEI light (ionization) - IL 2D imaging charge creation (ionization) - IBIC ERDA; RBS epth profiling
5 Terminal voltages. to 2 MV Ion sources sputtering, RF alphatross, uoplasmatron Goo selection of ion ranges / E/x!! Silicon I 27- Si 28 C 2 He 4 H Range(µm) E= MeV Range (µm) E= MeV
6 3 e j n e č o k o k s n o r t k e l e Cl O C Li He Electronic stopping 2 s m o t a 5 / 2 m c V e - H H e j n e č o k o n r a e l k u n 2 - Nuclear stopping e j n e č o k Cl O C Li He 3 V e k a n o i a j i g r e n e Ion Energy (kev)
7 25 um Transmission image of MeV C3+ through Cu gri Typical resolution um Best resolution.4 um
8 Maximum Maximumenergy energy5 5MeV MeV ME/q2 ME/q2 Beam Beamcurrents currents..fa fa Ion Ionhit hittime timecan canbe beetermine etermine by by~~ns nsresolution resolution
9 IBIC Al amorphous silicon IBIC - single ion technique for imaging of microscopic istribution of charge transport properties! - Imaging of grain bounaries, efects (such as islocations), electric fiel (polarization),... EFG silicon
10 IBIC - single ion technique for imaging of microscopic istribution of charge transport properties! - Imaging of grain bounaries, efects (such as islocations), electric fiel (polarization),... CVD iamon (997)
11 a) Ions lose their energy E/x b) Creation of charge pairs e/h c) Charge transport: Drift - in electric fiel Diffusion ) Inuce charge e) IBIC signal gubitak energije ionizacijom (ev/ion/a) 43 kev H.4 MeV He 2.5 MeV Li 4 MeV O 6.5 MeV O MeV Cl. x 4 2x 4 3x 4 4x 4 5x 4 6x 4 ubina u siliciju (A) V Incoming raiation V out electrons ions µm
12 Inuce current T= I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V.2. v.75.5 I Time
13 Inuce current T= I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time
14 Inuce current T=2 I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time
15 Inuce current T=3 I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time
16 Inuce current T=4 I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time
17 Inuce current T=5 I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time
18 Inuce current T=6 I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time
19 Inuce current T=7 I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time
20 Inuce current T=8 I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time
21 Inuce current T=9 I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time
22 Inuce current T= I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time
23 Inuce current T= I(t) T v = q Inuce charge (t) = I(t)t V out W. Shockley, J. Appl. Phys. 9 (938) 635 S. Ramo, Proc. I.R.E. 27 (939) V I Time
24 Velocity; v = µε = /T R Mobility; µ= 2 /(T R *V Bias ) τ (t) = T I(t)t I I(t) = q v exp t τ I Time Time
25 TRIBIC time resolve IBIC (by cathoe) CZnTe 2 µ= trv 2 8 Electron Electron mobility: mobility: 2 µµe==78 78cm cm2/vs /Vs 6 4 VO(mV) 2 e V -2 V -4 V -8 V - V t(µs) Depenence on electric fiel Æ electron mobility
26 IBIC line scan (anoe to cathoe) CZnTe For CCE=% K 322 K 296 K 287 K 256 K 238 K 2 K 77 K.8.7 CCE (µτ) (µτ)ee=(.4)* =(.4)*-3cm cm2/v /V -5 2 (µτ) (µτ)h=* =*-5cm cm2/v /V h istance from anoe (channels) Depenence on temperature 275
27 TRIBIC time resolve IBIC CZnTe 2 58 K 67 K 89 K 29 K 29 K VO (mv) t (µs) Depenence on temperature Æ Ientification of efects
28 Irraiation of certain regions in test samples will increase efect concentration an ecrease IBIC signal Si pin ioe
29 CZnTe after 5 9 p/cm 2 after.5 p/cm 2 Mobility of efects (as in CZnTe) Irraiate area
30 CCE (arbitrary units) Li ions 2.5 MeV CCE (%) Time (secons) Recombination of efects in minutes Fluence ( 7 ) cm -2
31 CCE (%) Time (secons) Recombination of efects in CCE (%) CCE (%) Time (secons) Time (secons) Annealing 24 hours on 5 Measurements of recombinatio n lifetimes!
32 Si PIN ioe - irraiate by 9 fluences - by p, He, Li, Cl of 5 um range - teste by IBIC using protons
33 Si PIN ioe - irraiate by 9 fluences - by p, He, Li, Cl of 5 um range - teste by IBIC using p an He = + K Φ NIEL e ave
34 Diamon etectors mm2, 5 um thick Irraiation an IBIC tests by MeV C ions Si pin ioe sc CVD iamon
35 electrons Diamon etectors mm2, 5 um thick +/- 5 V bias Irraiation an IBIC tests by 8 MeV C ions holes
36 Support of Public an Inustrial Research using Ion beam Technology Transnational access Networking Joint research activities SPIRIT Partners: ForschungszentrumDresen-Rossenorf (FZD) CNRS CENBG Boreaux (CNRS) Katholieke Universiteit Leuven + IMEC (KUL) Jozef Stefan Institut Ljubljana (JSI) Universität er Buneswehr München + TUM (UBW) CEA JANNUS Saclay an CIMAP Caen (CEA) University of Surrey (SUR) Institute Tecnologico e Nuclear Lisboa (ITN) University e Pierre et Marie Curie (UPMC) Rujer Boskovic Institute Zagreb (RBI) Swiss Feeral Institute of Technology (ETHZ)
37 Damage profile of 6 MeV C ions in iamon (SRIM simulation) if the iamon lattice gets amage / istorte above a critical threshol, it converts to graphite upon thermal annealing graphite is a very ifferent material with respect to iamon: it is soft, electrically conuctive an etchable amage ensity threshol < 9 22 cm -3 (partial) recovery of pristine structure upon thermal annealing > 9 22 cm -3 conversion to a graphite-like phase upon thermal annealing
38 Implantation with three-imensional masking evaporation of Cr-Au ahesion layer eposition of semispherical Au contact mask implantation with scanning ion microbeam mask removal A: Cr layer B: Au layer C: Au contact mask D: scanning ion beam (6 MeV C) E: burie graphitic channel P. Olivero et al, Diamon Rel. Mat. (28)
39 AFM Electrical characterisation: 3 2 R = 3.5,.5 MΩ channels 2&3 + geometry Æ ρ =.9,. Ω cm
Modeling of charge collection efficiency degradation in semiconductor devices induced by MeV ion beam irradiation
Modeling of charge collection efficiency degradation in semiconductor devices induced by MeV ion beam irradiation Ettore Vittone Physics Department University of Torino - Italy 1 IAEA Coordinate Research
More informationAccelerator laboratory of the Ruđer Bošković Institute
Accelerator laboratory of the Ruđer Bošković Institute Laboratory for ion beam interactions Division of experimental physics, Zagreb, Croatia Scientific: Milko Jakšić, Tonči Tadić, Iva Bogdanović Radović,
More informationAccelerator facilities - Ruđer Bošković Institute, Zagreb, Croatia
Accelerator facilities - Ruđer Bošković Institute, Zagreb, Croatia Milko Jaksic, Neven Soic Our capabilities (accelerator, sources, beamlines,...) Research activities (projects, users, int. collaborations,...)
More informationUtilization of the RBI Tandem Accelerator Facility for Analytical Applications
Utilization of the RBI Tandem Accelerator Facility for Analytical Applications Stjepko Fazinić Laboratory for Ion Beam Interactions Rudjer Bošković Institute, Zagreb, Croatia International Topical Meeting
More informationA new protocol to evaluate the charge collection efficiency degradation in semiconductor devices induced by MeV ions
Session 12: Modification and Damage: Contribute lecture O-35 A new protocol to evaluate the charge collection efficiency degradation in semiconductor devices induced by MeV ions Ettore Vittone Physics
More informationINTRODUCTION to ION BEAM TECHNIQUES. Marko Karlušić Ruđer Bošković Institute, Zagreb
INTRODUCTION to ION BEAM TECHNIQUES Marko Karlušić Ruđer Bošković Institute, Zagreb INTRODUCTION to ION BEAM ANALYSIS (IBA) Electrostatic accelerators Ion beam analysis with examples RBS ERDA PIXE Nuclear
More informationIAP NAN of Ukraine activity in. Possible areas of cooperation in. Roman Kholodov, PICS Meeting, Basivka, Ukraine,
1 IAP NAN of Ukraine activity in field of High Energy Physics. Possible areas of cooperation in frame of PICS and beyond. Institute of Applied Physics National Academy of Sciences of Ukraine 2 The Institute
More informationSINGLE CRYSTAL CVD DIAMOND MEMBRANE MICRODOSIMETERS FOR HADRON THERAPY. ADAMAS2017 Zagreb 28/11/2017 Pomorski Michal
SINGLE CRYSTAL CVD DIAMOND MEMBRANE MICRODOSIMETERS FOR HADRON THERAPY ADAMAS217 Zagreb 28/11/217 Pomorski Michal michal.pomorski@cea.fr INTERESTS FOR MICRODOSIMETRY COMMUNITY A slide from the opening
More informationTheory and practice of Materials Analysis for Microelectronics with a nuclear microprobe
TUTORIAL Theory and practice of Materials Analysis for Microelectronics with a nuclear microprobe Ettore Vittone Physics Department University of Torino, Italy Ettore Vittone 1 IBIC for the functional
More informationHigh voltage electron microscopy facility. Jannus-Saclay facility (GIS with Jannus-Orsay) SRMA
SRMA Jannus-Saclay facility (GIS with Jannus-Orsay) High voltage electron microscopy facility Lucile Beck - JANNUS laboratory - SRMP Jean Henry SRMA CEA Saclay CEA 10 AVRIL 2012 PAGE 1 Programs and objectives
More informationIn situ TEM studies of helium bubble/platelet evolution in Si based materials
In situ TEM studies of helium bubble/platelet evolution in Si based materials M. Vallet 1, M.F. Beaufort 1, J.F. Barbot 1, E. Oliviero 2 and S.E. Donnelly 3 1 Institut Pprime, CNRS-Université de Poitiers,
More informationIon-beam techniques. Ion beam. Electrostatic Accelerators. Van de Graaff accelerator Pelletron Tandem Van de Graaff
Ion-beam techniques RBS Target nucleus Ion beam STIM RBS: Rutherford backscattering ERD: Elastic recoil detection PIXE: Particle induced x-ray emission PIGE: Particle induced gamma emission NRA: Nuclear
More informationGaN for use in harsh radiation environments
4 th RD50 - Workshop on radiation hard semiconductor devices for very high luminosity colliders GaN for use in harsh radiation environments a (W Cunningham a, J Grant a, M Rahman a, E Gaubas b, J Vaitkus
More informationAlpha Particle scattering
Introuction Alpha Particle scattering Revise Jan. 11, 014 In this lab you will stuy the interaction of α-particles ( 4 He) with matter, in particular energy loss an elastic scattering from a gol target
More informationInteraction of ion beams with matter
Interaction of ion beams with matter Introduction Nuclear and electronic energy loss Radiation damage process Displacements by nuclear stopping Defects by electronic energy loss Defect-free irradiation
More informationSecondary ion mass spectrometry (SIMS)
Secondary ion mass spectrometry (SIMS) Lasse Vines 1 Secondary ion mass spectrometry O Zn 10000 O 2 Counts/sec 1000 100 Li Na K Cr ZnO 10 ZnO 2 1 0 20 40 60 80 100 Mass (AMU) 10 21 10 20 Si 07 Ge 0.3 Atomic
More informationIon Implantation ECE723
Ion Implantation Topic covered: Process and Advantages of Ion Implantation Ion Distribution and Removal of Lattice Damage Simulation of Ion Implantation Range of Implanted Ions Ion Implantation is the
More informationSecondary Ion Mass Spectrometry (SIMS) Thomas Sky
1 Secondary Ion Mass Spectrometry (SIMS) Thomas Sky Depth (µm) 2 Characterization of solar cells 0,0 1E16 1E17 1E18 1E19 1E20 0,2 0,4 0,6 0,8 1,0 1,2 P Concentration (cm -3 ) Characterization Optimization
More informationJoint ICTP-IAEA Workshop on Physics of Radiation Effect and its Simulation for Non-Metallic Condensed Matter.
2359-3 Joint ICTP-IAEA Workshop on Physics of Radiation Effect and its Simulation for Non-Metallic Condensed Matter 13-24 August 2012 Electrically active defects in semiconductors induced by radiation
More informationApplications for PIXE and other Ion Beam Analysis (IBA)
Applications for PIXE and other Ion Beam Analysis (IBA) PIXE-PAN Summer Science Program University of Notre Dame June, 2007 Larry Lamm, Research Professor Many, many facilities worldwide Some IBA Techniques
More informationThe scanning microbeam PIXE analysis facility at NIRS
Nuclear Instruments and Methods in Physics Research B 210 (2003) 42 47 www.elsevier.com/locate/nimb The scanning microbeam PIXE analysis facility at NIRS Hitoshi Imaseki a, *, Masae Yukawa a, Frank Watt
More informationMaterials Analysis Using Fast Ions
A. Denker, W. Bohne, J. Rauschenberg,J. Röhrich, E. Strub Ionenstrahllabor Hahn-Meitner-Institut Berlin Materials Analysis Using Fast Ions Introduction: Energy Loss PIXE Proton Induced X-ray Emission RBS
More informationSemiconductor X-Ray Detectors. Tobias Eggert Ketek GmbH
Semiconductor X-Ray Detectors Tobias Eggert Ketek GmbH Semiconductor X-Ray Detectors Part A Principles of Semiconductor Detectors 1. Basic Principles 2. Typical Applications 3. Planar Technology 4. Read-out
More informationCharacterisation of SiC by IBIC and other IBA techniques
Nuclear Instruments and Methods in Physics Research B 188 (2002) 130 134 www.elsevier.com/locate/nimb Characterisation of SiC by IBIC and other IBA techniques M. Jaksic a, *, Z. Bosnjak a, D. Gracin a,
More informationElectrically active defects in semiconductors induced by radiation
Electrically active defects in semiconductors induced by radiation Ivana Capan Rudjer Boskovic Institute, Croatia http://www.irb.hr/users/capan Outline Radiation damage Capacitance transient techniques
More informationResearch at the Tandem Accelerator
SI0100093 Nuclear Energy in Central Europe '98 Terme Catez, September? to 10, 1998 Research at the Tandem Accelerator M.Budnar and P.Pelicon J.Stefan Institute, SI-1001 Ljubljana, Slovenia' ABSTRACT -
More informationIdentification of Getter Defects in high-energy self-implanted Silicon at Rp/2
Identification of Getter Defects in high-energy self-implanted Silicon at Rp R. Krause-Rehberg 1, F. Börner 1, F. Redmann 1, J. Gebauer 1, R. Kögler 2, R. Kliemann 2, W. Skorupa 2, W. Egger 3, G. Kögel
More informationInstitute of Physics & Power Engineering Current Status of the Problem of Cross Section Data for Ion Beam Analysis
Institute of Physics & Power Engineering Current Status of the Problem of Cross Section Data for Ion Beam Analysis A.F. Gurbich IBA Methods Acronym PIXE PIGE RBS NRA NRP or r-nra ERDA or FRS Particle-Induced
More informationFormation of buried conductive micro-channels in single crystal diamond. with MeV C and He implantation
Formation of buried conductive micro-channels in single crystal diamond with MeV C and He implantation F. Picollo 1, P. Olivero 1 *, F. Bellotti 2, J. A. Lo Giudice 1, G. Amato 2, M. 3, N. Skukan 3, 3,
More informationEE 212 FALL ION IMPLANTATION - Chapter 8 Basic Concepts
EE 212 FALL 1999-00 ION IMPLANTATION - Chapter 8 Basic Concepts Ion implantation is the dominant method of doping used today. In spite of creating enormous lattice damage it is favored because: Large range
More informationSemiconductor Detectors
Semiconductor Detectors Summary of Last Lecture Band structure in Solids: Conduction band Conduction band thermal conductivity: E g > 5 ev Valence band Insulator Charge carrier in conductor: e - Charge
More informationionbeam.kigam.re.kr Beam Application Ion Group
ionbeam.kigam.re.kr Ion Application Group http://ionbeam.kigam.re.kr Project Schedule Major subjects 88 89 9 91 92 93 94 95 96 97 98 99 1 2 3 4 5 6 7 8 9 1 11 Ion Analysis Setup of 1.7MV Tandem VDG Accelerator
More informationSpectroscopy on Mars!
Spectroscopy on Mars! Pathfinder Spirit and Opportunity Real World Friday H2A The Mars Pathfinder: Geological Elemental Analysis On December 4th, 1996, the Mars Pathfinder was launched from earth to begin
More informationApplications of Nuclear Analytical Techniques in Geoscience
Applications of Nuclear Analytical Techniques in Geoscience J. Aspiazu a,1, J. López a, J. Ramírez a, M. E. Montero b, P. Villaseñor a a Intituto Nacional de Investigaciones Nucleares (ININ), Carretera
More informationLecture 22 Ion Beam Techniques
Lecture 22 Ion Beam Techniques Schroder: Chapter 11.3 1/44 Announcements Homework 6/6: Will be online on later today. Due Wednesday June 6th at 10:00am. I will return it at the final exam (14 th June).
More informationIon Implantation. alternative to diffusion for the introduction of dopants essentially a physical process, rather than chemical advantages:
Ion Implantation alternative to diffusion for the introduction of dopants essentially a physical process, rather than chemical advantages: mass separation allows wide varies of dopants dose control: diffusion
More informationwater adding dye partial mixing homogenization time
iffusion iffusion is a process of mass transport that involves the movement of one atomic species into another. It occurs by ranom atomic jumps from one position to another an takes place in the gaseous,
More informationSmall Angle Neutron Scattering in Different Fields of Research. Henrich Frielinghaus
Small Angle Neutron Scattering in Different Fields of Research Henrich Frielinghaus Jülich Centre for Neutron Science Forschungszentrum Jülich GmbH Lichtenbergstrasse 1 85747 Garching (München) h.frielinghaus@fz-juelich.de
More informationSerge Bouffard EMIR User days
facilities Serge Bouffard EMIR User days October 20 th, 2011 EMIR network a national network of accelerators dedicated to material irradiation EMIR network gathers the French facilities for material irradiation
More informationOutlook: Application of Positron Annihilation for defects investigations in thin films. Introduction to Positron Annihilation Methods
Application of Positron Annihilation for defects investigations in thin films V. Bondarenko, R. Krause-Rehberg Martin-Luther-University Halle-Wittenberg, Halle, Germany Outlook: Introduction to Positron
More informationCOMPARATIVE STUDY OF PIGE, PIXE AND NAA ANALYTICAL TECHNIQUES FOR THE DETERMINATION OF MINOR ELEMENTS IN STEELS
COMPARATIVE STUDY OF PIGE, PIXE AND NAA ANALYTICAL TECHNIQUES FOR THE DETERMINATION OF MINOR ELEMENTS IN STEELS ANTOANETA ENE 1, I. V. POPESCU 2, T. BÃDICÃ 3, C. BEªLIU 4 1 Department of Physics, Faculty
More informationAIEEE Physics Model Question Paper
IEEE Physics Moel Question Paper ote: Question o. 11 to 1 an 1 to consist of Eight (8) marks each for each correct response an remaining questions consist of Four (4) marks. ¼ marks will be eucte for inicating
More informationSurface analysis techniques
Experimental methods in physics Surface analysis techniques 3. Ion probes Elemental and molecular analysis Jean-Marc Bonard Academic year 10-11 3. Elemental and molecular analysis 3.1.!Secondary ion mass
More informationIon Implanter Cyclotron Apparatus System
Ion Implanter Cyclotron Apparatus System A. Latuszyñski, K. Pyszniak, A. DroŸdziel, D. M¹czka Institute of Physics, Maria Curie-Sk³odowska University, Lublin, Poland Abstract In this paper the authors
More informationMeasurement of the Ionizing Energy Depositions after Fast Neutron Interactions in Silicon
Measurement of the Ionizing Energy Depositions after Fast Neutron Interactions in Silicon B. Bergmann a), I. Caicedo a), E. Fröjdh c), J. Kirstead b), S. Pospisil a), H. Takai b), D. Turecek a) a) Institute
More informationMS482 Materials Characterization ( 재료분석 ) Lecture Note 5: RBS
2016 Fall Semester MS482 Materials Characterization ( 재료분석 ) Lecture Note 5: RBS Byungha Shin Dept. of MSE, KAIST 1 Course Information Syllabus 1. Overview of various characterization techniques (1 lecture)
More informationAtomic and Nuclear Analytical Methods
H.R. Verma Atomic and Nuclear Analytical Methods XRF, Mössbauer, XPS, NAA and Ion-Beam Spectroscopic Techniques With 128 Figures and 24 Tables Springer Contents 1 X-ray Fluorescence (XRF) and Particle-Induced
More informationSTUDY OF SEMICONDUCTOR DEVICES EXPOSED TO SPATIAL RADIATION
STUDY OF SEMICONDUCTOR DEVICES EXPOSED TO SPATIAL RADIATION G. DOMINGO YAGÜEZ 1, D. N. VILLARRAZA 1, M. A. CAPPELLETTI 1 y E. L. PELTZER y BLANCÁ 1,2 1 Grupo de Estudio de Materiales y Dispositivos Electrónicos
More informationION IMPLANTATION - Chapter 8 Basic Concepts
ION IMPLANTATION - Chapter 8 Basic Concepts Ion implantation is the dominant method of doping used today. In spite of creating enormous lattice damage it is favored because: Large range of doses - 1 11
More informationV.Storizhko Institute of Applied Physics, National Academy of Sciences of Ukraine
IAP accelerator based facility for simulation and studies of radiation induced defects in materials V.Storizhko Institute of Applied Physics, National Academy of Sciences of Ukraine IAEA Technical Meeting
More informationLight element IBA by Elastic Recoil Detection and Nuclear Reaction Analysis R. Heller
Text optional: Institute Prof. Dr. Hans Mousterian www.fzd.de Mitglied der Leibniz-Gemeinschaft Light element IBA by Elastic Recoil Detection and Nuclear Reaction Analysis R. Heller IBA Techniques slide
More informationLarge electron screening effect in different environments
Large electron screening effect in different environments Aleksandra Cvetinović, Matej Lipoglavsek, Sabina Markelj and Jelena Vesić Jožef Stefan Institute, Jamova cesta 39, Ljubljana, Slovenia Abstract
More informationDevelopment and characterization of 3D semiconductor X-rays detectors for medical imaging
Development and characterization of 3D semiconductor X-rays detectors for medical imaging Marie-Laure Avenel, Eric Gros d Aillon CEA-LETI, DETectors Laboratory marie-laure.avenel@cea.fr Outlines Problematic
More informationCharge transport properties. of heavily irradiated
Charge transport properties of heavily irradiated Characterization SC CVD detectors diamond detectors SC CVDofdiamond for heavy ions spectroscopy Michal Pomorski and MIPs timing Eleni Berdermann GSI Darmstadt
More informationDepth profiles of helium and hydrogen in tungsten nano-tendril surface morphology using Elastic Recoil Detection
PSFC/JA-12-82 Depth profiles of helium and hydrogen in tungsten nano-tendril surface morphology using Elastic Recoil Detection K.B. Woller, D.G. Whyte, G.M. Wright, R.P. Doerner*, G. de Temmerman** * Center
More informationTest Simulation of Neutron Damage to Electronic Components using Accelerator Facilities
Test Simulation of Neutron Damage to Electronic Components using Accelerator Facilities Donald King, Patrick Griffin, Ed Bielejec, William Wampler, Chuck Hembree, Kyle McDonald, Tim Sheridan, George Vizkelethy,
More informationphysics/ Sep 1997
GLAS-PPE/97-6 28 August 1997 Department of Physics & Astronomy Experimental Particle Physics Group Kelvin Building, University of Glasgow, Glasgow, G12 8QQ, Scotland. Telephone: +44 - ()141 3398855 Fax:
More informationStatus of the magnetic spectrometer PRISMA
Status of the magnetic spectrometer PRISMA E. Fioretto INFN Laboratori Nazionali di Legnaro 1 PRISMA in vacuum mode Dipole 50 cm 120 cm 60 +130 Quadrupole 30 cm Beam Target 2-20 Rotating platform PRISMA:
More informationRITU and the GREAT Spectrometer
RITU and the GREAT Spectrometer Cath Scholey Department of Physics University of Jyväskylä 19 th March 2006 3rd TASCA Detector Group Meeting, GSI Darmstadt C. Scholey (JYFL, Finland) RITU and the GREAT
More informationChap. 11 Semiconductor Diodes
Chap. 11 Semiconductor Diodes Semiconductor diodes provide the best resolution for energy measurements, silicon based devices are generally used for charged-particles, germanium for photons. Scintillators
More informationMeV Particles, Huge Impact, Soft Desorption.
MeV Particles, Huge Impact, Soft Desorption. S. Della-Negra Institut de Physique Nucléaire d Orsay, UMR 8608 CNRS- Univ. Paris-Sud, F-91406Orsay Cedex (dellaneg@ipno.in2p3.fr) Since the first PDMS experiment
More informationRutherford Backscattering Spectrometry
Rutherford Backscattering Spectrometry EMSE-515 Fall 2005 F. Ernst 1 Bohr s Model of an Atom existence of central core established by single collision, large-angle scattering of alpha particles ( 4 He
More informationEpitaxial SiC Schottky barriers for radiation and particle detection
Epitaxial SiC Schottky barriers for radiation and particle detection M. Bruzzi, M. Bucciolini, R. D'Alessandro, S. Lagomarsino, S. Pini, S. Sciortino INFN Firenze - Università di Firenze F. Nava INFN Bologna
More informationIN THE NAME OF ALLAH, THE MOST MERCIFUL AND COMPASSIONATE
IN THE NAME OF ALLAH, THE MOST MERCIFUL AND COMPASSIONATE Ion Beam Analysis of Diamond Thin Films Sobia Allah Rakha Experimental Physics Labs 04-03-2010 Outline Diamond Nanostructures Deposition of Diamond
More informationEE 527 MICROFABRICATION. Lecture 5 Tai-Chang Chen University of Washington
EE 527 MICROFABRICATION Lecture 5 Tai-Chang Chen University of Washington MICROSCOPY AND VISUALIZATION Electron microscope, transmission electron microscope Resolution: atomic imaging Use: lattice spacing.
More informationContribution of Small Facilities to the study of Nuclear Reactions
Contribution of Small Facilities to the study of Nuclear Reactions F.J. Ferrer, B. Fernández and J. Gómez Camacho Centro Nacional de Aceleradores (U. Sevilla, J. Andalucia, CSIC) Sevilla, Spain NuSPRASEN
More informationaccelerating opportunities
accelerating opportunities 9 MV Pelletron FN Tandem Accelerator for basic and applied research The 9MV Tandem Accelerator has been built by the High Voltage Engineering Corporation (HVEC) in 1973 and it
More informationMS482 Materials Characterization ( 재료분석 ) Lecture Note 5: RBS. Byungha Shin Dept. of MSE, KAIST
2015 Fall Semester MS482 Materials Characterization ( 재료분석 ) Lecture Note 5: RBS Byungha Shin Dept. of MSE, KAIST 1 Course Information Syllabus 1. Overview of various characterization techniques (1 lecture)
More informationEE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors
EE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors 5. Radiation Microsensors Radiation µ-sensors convert incident radiant signals into standard electrical out put signals. Radiant Signals Classification
More informationEEE4106Z Radiation Interactions & Detection
EEE4106Z Radiation Interactions & Detection 2. Radiation Detection Dr. Steve Peterson 5.14 RW James Department of Physics University of Cape Town steve.peterson@uct.ac.za May 06, 2015 EEE4106Z :: Radiation
More informationElectronic Devices and Circuit Theory
Instructor s Resource Manual to accompany Electronic Devices an Circuit Theory Tenth Eition Robert L. Boylesta Louis Nashelsky Upper Sale River, New Jersey Columbus, Ohio Copyright 2009 by Pearson Eucation,
More informationarxiv: v1 [physics.ins-det] 25 May 2017
physica status solidi Description of radiation damage in diamond sensors using an effective defect model Florian Kassel *,1,2, Moritz Guthoff 2, Anne Dabrowski 2, Wim de Boer 1 1 Institute for Experimental
More informationTheory and applications of the Ion Beam Induced Charge (IBIC) technique
Università degli Studi di Torino Scuola di Dottorato in Scienza ed Alta Tecnologia Indirizzo di Fisica ed Astro9isica Ciclo XXV Theory and applications of the Ion Beam Induced Charge (IBIC) technique Candidate
More informationMSN551 LITHOGRAPHY II
MSN551 Introduction to Micro and Nano Fabrication LITHOGRAPHY II E-Beam, Focused Ion Beam and Soft Lithography Why need electron beam lithography? Smaller features are required By electronics industry:
More informationTest Simulation of Neutron Damage to Electronic Components using Accelerator Facilities
1 AP/DM-05 Test Simulation of Neutron Damage to Electronic Components using Accelerator Facilities D. King 1, E. Bielejec 1, C. Hembree 1, K. McDonald 1, R. Fleming 1, W. Wampler 1, G. Vizkelethy 1, T.
More informationIon irradiation induced damage and dynamic recovery in single crystal silicon carbide and strontium titanate
University of Tennessee, Knoxville Trace: Tennessee Research and Creative Exchange Doctoral Dissertations Graduate School 8-2015 Ion irradiation induced damage and dynamic recovery in single crystal silicon
More informationin Si by means of Positron Annihilation
Investigation of the Rp/2 /2-effect in Si by means of Positron Annihilation R. Krause-Rehberg, F. Börner, F. Redmann Universität Halle Martin-Luther-Universität R. Kögler, W. Skorupa Forschungszentrum
More informationLASER MICRO-MACHINING FOR 3D DIAMOND DETECTORS APPLICATIONS
LASER MICRO-MACHINING FOR 3D DIAMOND DETECTORS APPLICATIONS B.Caylar 1, M.Pomorski 1, D.Tromson 1, P.Bergonzo 1, J.Alvarez 2, A.Oh 3,C. Da Via 3, I.Haughton 3, V.Tyzhnevy 3, T.Wengler 4 1 CEA-LIST, French
More informationHIGH ENERGY IRRADIATION PROPERTIES OF CdTe/CdS SOLAR CELLS
Presented at the 29 th PVSC, New Orleans (2002) HIGH ENERGY IRRADIATION PROPERTIES OF CdTe/CdS SOLAR CELLS D. L. Bätzner, A. Romeo, M. Döbeli 1, K. Weinert 2, H. Zogg, A. N. Tiwari Thin Film Physics Group,
More informationAssessing Temperature Dependence of Drift. Mobility in Methylammonium Lead Iodide
Supporting Information Assessing Temperature Dependence of Drift Mobility in Methylammonium Lead Iodide Perovskite Single Crystals Shreetu Shrestha, Gebhard J. Matt*, Andres Osvet, Daniel Niesner, Rainer
More informationRadiation Interactions
Raiation Measurement Systems/Lecture. Interactions Raiation Measurement Systems Knoll chap. Raiation Interactions Ho Kyung Kim Pusan National University The operation of any raiation etector epens on the
More informationRadiation Effects nm Si 3 N 4
The Active DEPFET Pixel Sensor: Irradiation Effects due to Ionizing Radiation o Motivation / Radiation Effects o Devices and Facilities o Results o Summary and Conclusion MPI Semiconductor Laboratory Munich
More informationJoint ICTP-IAEA Workshop on Physics of Radiation Effect and its Simulation for Non-Metallic Condensed Matter.
2359-13 Joint ICTP-IAEA Workshop on Physics of Radiation Effect and its Simulation for Non-Metallic Condensed Matter 13-24 August 2012 Ion beam lithography - I Paolo Olivero University of Turin Italy Ion
More informationBenchmark measurements of non-rutherford proton elastic scattering cross section for boron
Published in: Nuclear Instr. Meth. B (01) 0 Benchmark measurements of non-rutherford proton elastic scattering cross section for boron M. Chiari (a), M. Bianconi (b), I. Bogdanović Radović (c), M. Mayer
More informationVLSI Technology Dr. Nandita Dasgupta Department of Electrical Engineering Indian Institute of Technology, Madras
VLSI Technology Dr. Nandita Dasgupta Department of Electrical Engineering Indian Institute of Technology, Madras Lecture - 20 Ion-implantation systems and damages during implantation So, in our discussion
More informationPositron Annihilation Spectroscopy - A non-destructive method for material testing -
Maik Butterling Institute of Radiation Physics http://www.hzdr.de Positron Annihilation Spectroscopy - A non-destructive method for material testing - Maik Butterling Positron Annihilation Spectroscopy
More informationFlux and neutron spectrum measurements in fast neutron irradiation experiments
Flux and neutron spectrum measurements in fast neutron irradiation experiments G.Gorini WORKSHOP A neutron irradiation facility for space applications Rome, 8th June 2015 OUTLINE ChipIr and SEE: New Istrument
More informationA short history of accelerators CHESS & LEPP. 4πε. 1919: Rutherford produces first nuclear reactions with natural 4 He 14
17 A short history of accelerators 1911: Rutherford discovers the nucleus with 7.7MeV 4 He from 14 Po alpha decay measuring the elastic crossection of 197 Au + 4 He! 197 Au + 4 He. 14 Po 4 He 197 Au E
More informationSURVEY OF RECENT RADIATION DAMGE STUDIES AT HAMBURG
SURVEY OF RECENT RADIATION DAMGE STUDIES AT HAMBURG E. Fretwurst 1, D. Contarato 1, F. Hönniger 1, G. Kramberger 2 G. Lindström 1, I. Pintilie 1,3, A. Schramm 1, J. Stahl 1 1 Institute for Experimental
More informationSOLUTION & ANSWER FOR KCET-2009 VERSION A1 [PHYSICS]
SOLUTION & ANSWER FOR KCET-009 VERSION A [PHYSICS]. The number of significant figures in the numbers.8000 ---- 5 an 7.8000 5 significant igits 8000.50 7 significant igits. β-ecay means emission of electron
More informationMaterials Science. Hand axes like this one found in the United Arab Emirates indicate humans left Africa 125,000 years ago.
Summary Materials Science Ion Beam Analysis (IBA) @ 3 MV Tandetron TM Accelerator Rutherford Backscattering Spectrometry (RBS) Elastic Recoil Detection (ERD) Nuclear Reaction Analysis (NRA) Ion implant/channeling
More informationIAEA-TECDOC Instrumentation for PIXE and RBS
IAEA-TECDOC-1190 Instrumentation for PIXE and RBS December 2000 The originating Section of this publication in the IAEA was: Physics Section International Atomic Energy Agency Wagramer Strasse 5 P.O. Box
More informationBerdermann, GSI Darmstadt. Helmholtz Zentrum für Schwerionenforschung
Elèni Berdermann, GSI Darmstadt Helmholtz Zentrum für Schwerionenforschung ELECTRICAL CHARACTERIZATION of DIA-ON ON-IR; DoI- DETECTOR CHARACTERISTICS in 2010 INTRODUCTION DESCRIPTION of THE MEASUREMENTS:
More information3.155J/6.152J Microelectronic Processing Technology Fall Term, 2004
3.155J/6.152J Microelectronic Processing Technology Fall Term, 2004 Bob O'Handley Martin Schmidt Quiz Nov. 17, 2004 Ion implantation, diffusion [15] 1. a) Two identical p-type Si wafers (N a = 10 17 cm
More informationtwo-proton radioactivity discovery of two-proton radioactivity experimental results with TPC s future studies
two-proton radioactivity discovery of two-proton radioactivity experimental results with TPC s future studies Bertram Blank CEN Bordeaux-Gradignan EPS European Nuclear Physics Conference 2009 Spring meeting
More informationElectron Rutherford Backscattering, a versatile tool for the study of thin films
Electron Rutherford Backscattering, a versatile tool for the study of thin films Maarten Vos Research School of Physics and Engineering Australian National University Canberra Australia Acknowledgements:
More informationThe Configuration of the Atom: Rutherford s Model
CHAPTR 2 The Configuration of the Atom: Rutherford s Model Problem 2.2. (a) When α particles with kinetic energy of 5.00 MeV are scattered at 90 by gold nuclei, what is the impact parameter? (b) If the
More informationEDS User School. Principles of Electron Beam Microanalysis
EDS User School Principles of Electron Beam Microanalysis Outline 1.) Beam-specimen interactions 2.) EDS spectra: Origin of Bremsstrahlung and characteristic peaks 3.) Moseley s law 4.) Characteristic
More informationTransmissive Final Optic for Laser IFE
Transmissive Final Optic for Laser IFE S. A. Payne, J. F. Latkowski, A. Kubota, M. J. Caturla, S. N. Dixit, and J. A. Speth Lawrence Livermore National Laboratory April 4, 2002 HAPL Program Workshop General
More informationFYS3410 Condensed matter physics
FYS3410 Condensed matter physics Lecture 23 and 24: pn-junctions and electrooptics Randi Haakenaasen UniK/UiO Forsvarets forskningsinstitutt 11.05.2016 and 18.05.2016 Outline Why pn-junctions are important
More information