EE 330 Lecture 12. Devices in Semiconductor Processes. Diodes

Size: px
Start display at page:

Download "EE 330 Lecture 12. Devices in Semiconductor Processes. Diodes"

Transcription

1 EE 330 Lecture 12 evices in Semiconuctor Processes ioes

2 Review from Last Lecture

3 Review from Last Lecture

4 Review from Last Lecture Silicon opants in Semiconuctor Processes B (Boron) wiely use a opant for creating p-type regions P (Phosphorus) wiely use a opant for creating n-type regions (bulk oping, iffuses fast) As (Arsenic) wiely use a opant for creating n-type regions (Active region oping, iffuses slower)

5 ioes (pn junctions) epletion region create that is ionize but voi of carriers

6 pn Junctions Physical Bounary Separating n-type an p-type regions f oping levels ientical, epletion region extens equally into n-type an p-type regions

7 pn Junctions Physical Bounary Separating n-type an p-type regions Extens farther into p-type region if p-oping lower than n-oping

8 pn Junctions Physical Bounary Separating n-type an p-type regions Extens farther into n-type region if n-oping lower than p-oping

9 pn Junctions Positive voltages across the p to n junction are referre to forwar bias Negative voltages across the p to n junction are referre to reverse bias As forwar bias increases, epletion region thins an current starts to flow Current grows very rapily as forwar bias increases Current is very small uner revere bias

10 pn Junctions Anoe Anoe Cathoe Cathoe Circuit Symbol

11 pn Junctions As forwar bias increases, epletion region thins an current starts to flow Current grows very rapily as forwar bias increases Anoe Cathoe Simple ioe Moel: =0 >0 =0 <0 Simple moel often referre to as the eal ioe moel

12 pn Junctions Simple ioe Moel: pn junction serves as a rectifier passing current in one irection an blocking it n the other irection

13 Rectifier Application: 1 OUT Simple ioe Moel: N 1K N = M sinωt M N t OUT M t

14 - characteristics of pn junction mprove ioe Moel: (signal or rectifier ioe) S in the 10fA to 100fA range kt = t q ioe Equation t e 1 S What is t at room temp? t is about 26m at room temp k= (24) JK -1 q = (40) C k/q= K -1 ioe equation ue to William Schockley, inventor of BJT n 1919, William Henry Eccles coine the term ioe n 1940, Russell Ohl stumble upon the p-n junction ioe

15 (amps) - characteristics of pn junction mprove ioe Moel: (signal or rectifier ioe) ioe Characteristics ioe Equation Uner reverse bias ( <0), Uner forwar bias ( >0), t e 1 S Simplification of ioe Equation: S Se t (volts) S in the 10fA to 100fA range kt = t q k= (24) JK -1 q = (40) C k/q= K -1 t is about 26m at room temp Simplification essentially ientical moel except for very close to 0 ioe Equation or forwar bias simplification is unwiely to work with analytically

16 - characteristics of pn junction mprove ioe Moel: (signal or rectifier ioe) ioe Equation Simplification of ioe Equation: Uner reverse bias, Uner forwar bias, t e 1 S S S e t S often in the 10fA to 100fA range S proportional to junction area t is about 26m at room temp How much error is introuce using the simplification for > 0.5? t S e 1 Se t e 1 S t e How much error is introuce using the simplification for < - 0.5? e Simplification almost never introuces any significant error 9 9

17 Will you impress your colleagues or your boss if you use the more exact ioe equation when < -0.5 or > +0.5? Will your colleagues or your boss be unimpresse if you use the more exact ioe equation when < -0.5 or > +0.5?

18 pn Junctions Anoe Cathoe ioe Equation: (goo enough for most applications) JSAe 0 n T 0 0 Note: S =J s A J S = Sat Current ensity (in the 1aA/u 2 to 1fA/u 2 range) A= Junction Cross Section Area T =kt/q (k/q=1.381x10-23 C/ K/1.6x10-19 C=8.62x10-5 / K) n is approximately 1

19 pn Junctions ioe Equation: J 0 S Ae n T 0 0 Anoe J S is strongly temperature epenent With n=1, for >0, Cathoe - G0 (T) J T m e Ae t t SX Typical values for key parameters: J SX =0.5A/μ 2, G0 =1.17, m=2.3

20 Example: pn Junctions - G0 (T) J m t T e Ae SX t What percent change in S will occur for a 1 C change in temperature at room temperature? - -G G0 G0 G0 G0 (T ) t T1 (T ) (T ) m m m m t T1 t 2 t t 2 t 2 J T e Ae - J T e Ae T e - T e SX T SX T T S S -G0 - - G0 G0 m t T1 (T ) m t T1 t 2 J T e Ae T e SX T T x x x10 S % 21% S

21 pn Junctions Anoe Cathoe ioe Equation: (goo enough for most applications) JSAe 0 n T 0 0 S =J s A Simple ioe Moel: Often terme the conucting or ON state Often terme the nonconucting or OFF state

22 Consier again the basic rectifier circuit OUT N R Previously consiere sinusoial excitation Previously gave qualitative analysis Rigorous analysis metho is essential? O U T

23 Analysis of Nonlinear Circuits (Circuits with one or more nonlinear evices) What analysis tools or methos can be use? KCL? KL? Superposition? Noal Analysis Mesh Analysis Two-Port Subcircuits oltage ivier? Current ivier? Thevenin an Norton Equivalent Circuits?

24 Consier again the basic rectifier circuit OUT N R N OUT R R t e 1 S OUT S R e N t O U T 1 Even the simplest ioe circuit oes not have a close-form solution when ioe equation is use to moel the ioe!! ue to the nonlinear nature of the ioe equation Simplifications are essential if analytical results are to be obtaine

25 (amps) Lets stuy the ioe equation a little further t S e 1 ioe Characteristics Linear-Linear Axis (volts) Power issipation Becomes estructive if > 0.85 (actually less)

26 (amps) Lets stuy the ioe equation a little further t e 1 S ioe Characteristics E-06 1E-08 1E-10 1E-12 Linear-Log Axis (volts) For two ecaes of current change, is close to 0.6 This is the most useful current range for many applications

27 (amps) Lets stuy the ioe equation a little further t e 1 S ioe Characteristics (volts) For two ecaes of current change, is close to 0.6 This is the most useful current range when conucting for many applications

28 (amps) Lets stuy the ioe equation a little further t e 1 S ioe Characteristics (volts) Wiely Use Piecewise Linear Moel

29 (amps) Lets stuy the ioe equation a little further t e 1 S ioe Characteristics (volts) Better moel in ON state though often not neee nclues ioe ON resistance

30 Lets stuy the ioe equation a little further t e 1 S Piecewise Linear Moel with ioe Resistance 0 if 0.6 R (R is rather small: often in the 20Ώ to 100Ώ range): if Equivalent Circuit A C A C Off State A C 0.6 R On State

31 The eal ioe 0 if 0 0 if 0

32 The eal ioe 0 if 0 0 if 0 OFF ON ON OFF ali for >0 0

33 (amps) (amps) ioe Moels (amps) ioe Characteristics (volts) ioe Characteristics (volts) ioe Characteristics (volts) Which moel shoul be use? The simplest moel that will give acceptable results in the analysis of a circuit

34 (amps) (amps) (amps) ioe Moels ioe Characteristics ioe Equation t e 1 S (volts) ioe Characteristics if if (volts) ioe Characteristics Piecewise Linear Moels R if if (volts) 0 if 0 0 if 0

35 0 0 0 if if 0 ioe Moels ioe Equation 1 e t S Piecewise Linear Moels R When are the piecewise-linear moels aequate? When it oesn t make much ifference whether =0.6 or =0.7 is use When is the ieal PWL moel aequate? When it oesn t make much ifference whether =0 or =0.7 is use

36 Example: etermine OUT for the following circuit 10K OUT 12 1 Solution: Strategy: 1. Assume PWL moel with =0.6, R =0 2. Guess state of ioe (ON) 3. Analyze circuit with moel 4. aliate state of guess in step 2 (verify the if conition in moel) 5. Assume PWL with = Guess state of ioe (ON) 7. Analyze circuit with moel 8. aliate state of guess in step 6 (verify the if conition in moel) 9. Show ifference between results using these two moels is small 10. f ifference is not small, must use a ifferent moel

37 Solution: 1. Assume PWL moel with =0.6, R =0 2. Guess state of ioe (ON) 10K OUT Analyze circuit with moel = 1. 14mA OUT 10K 4. aliate state of guess in step 2 To valiate state, must show >0 = OUT =1.14mA>0

38 Solution: 5. Assume PWL moel with =0.7, R =0 6. Guess state of ioe (ON) 10K OUT Analyze circuit with moel = 1. 13mA OUT 10K 8. aliate state of guess in step 6 To valiate state, must show >0 = OUT =1.13mA>0

39 Solution: 9. Show ifference between results using these two moels is small =1.14mA an =1.13 ma are close OUT OUT Thus, can conclue OUT 1.14mA

40 Example: etermine OUT for the following circuit 10K 0.8 OUT 1 Solution: Strategy: 1. Assume PWL moel with =0.6, R =0 2. Guess state of ioe (ON) 3. Analyze circuit with moel 4. aliate state of guess in step 2 5. Assume PWL with = Guess state of ioe (ON) 7. Analyze circuit with moel 8. aliate state of guess in step 6 9. Show ifference between results using these two moels is small 10. f ifference is not small, must use a ifferent moel

41 Solution: 1. Assume PWL moel with =0.6, R =0 2. Guess state of ioe (ON) 10K 0.8 OUT Analyze circuit with moel = OUT 10K 20 A 4. aliate state of guess in step 2 To valiate state, must show >0 = =20A>0 OUT

42 Solution: 5. Assume PWL moel with =0.7, R =0 6. Guess state of ioe (ON) 10K 0.8 OUT Analyze circuit with moel = OUT 10K 10 A 8. aliate state of guess in step 6 To valiate state, must show >0 = =10A>0 OUT

43 Solution: 9. Show ifference between results using these two moels is small =10A an =20A are not close OUT OUT 10. f ifference is not small, must use a ifferent moel Thus must use ioe equation to moel the evice OUT OUT 0.8- = 10K = e S t K OUT 0.6 Solve simultaneously, assume t =25m, S =1fA Solving these two equations by iteration, obtain = an OUT =18.60μA

44 En of Lecture 12

EE 330 Lecture 13. Devices in Semiconductor Processes. Diodes Capacitors Transistors

EE 330 Lecture 13. Devices in Semiconductor Processes. Diodes Capacitors Transistors EE 330 Lecture 13 evices in Semiconuctor Processes ioes Capacitors Transistors Review from Last Lecture pn Junctions Physical Bounary Separating n-type an p-type regions Extens farther into n-type region

More information

EE 330 Lecture 13. Devices in Semiconductor Processes. Diodes

EE 330 Lecture 13. Devices in Semiconductor Processes. Diodes EE 330 Lecture 13 evices in Semiconductor Processes iodes Exam 1 Friday Sept 22 Students may bring 1 page of notes Next weeks HW assignment due on Wed Sept 20 at beginning of class No 5:00 p.m extension

More information

EE 330 Lecture 12. Devices in Semiconductor Processes. Resistors Diodes

EE 330 Lecture 12. Devices in Semiconductor Processes. Resistors Diodes EE 330 Lecture 12 evices in Semiconductor Processes Resistors iodes Exam 1 Friday Feb 16 Students may bring 1 page of notes HW assignment of week of Feb 11 due on Wed Sfeb 14 at beginning of class No 5:00

More information

EE 330 Lecture 15. Devices in Semiconductor Processes. Diodes Capacitors MOSFETs

EE 330 Lecture 15. Devices in Semiconductor Processes. Diodes Capacitors MOSFETs EE 330 Lecture 15 evices in Semiconuctor Processes ioes Capacitors MOSFETs Review from Last Lecture Basic evices an evice Moels Resistor ioe Capacitor MOSFET BJT Review from Last Lecture Review from Last

More information

EE 330 Lecture 14. Devices in Semiconductor Processes. Diodes Capacitors MOSFETs

EE 330 Lecture 14. Devices in Semiconductor Processes. Diodes Capacitors MOSFETs EE 330 Lecture 14 Devices in Semiconuctor Processes Dioes Capacitors MOSFETs Reminer: Exam 1 Friay Feb 16 Stuents may bring one page of notes (front an back) but no electronic ata storage or remote access

More information

Electronic Devices and Circuit Theory

Electronic Devices and Circuit Theory Instructor s Resource Manual to accompany Electronic Devices an Circuit Theory Tenth Eition Robert L. Boylesta Louis Nashelsky Upper Sale River, New Jersey Columbus, Ohio Copyright 2009 by Pearson Eucation,

More information

Lecture contents. Metal-semiconductor contact

Lecture contents. Metal-semiconductor contact 1 Lecture contents Metal-semiconuctor contact Electrostatics: Full epletion approimation Electrostatics: Eact electrostatic solution Current Methos for barrier measurement Junctions: general approaches,

More information

Two Dimensional Numerical Simulator for Modeling NDC Region in SNDC Devices

Two Dimensional Numerical Simulator for Modeling NDC Region in SNDC Devices Journal of Physics: Conference Series PAPER OPEN ACCESS Two Dimensional Numerical Simulator for Moeling NDC Region in SNDC Devices To cite this article: Dheeraj Kumar Sinha et al 2016 J. Phys.: Conf. Ser.

More information

Module 2. DC Circuit. Version 2 EE IIT, Kharagpur

Module 2. DC Circuit. Version 2 EE IIT, Kharagpur Moule 2 DC Circuit Lesson 9 Analysis of c resistive network in presence of one non-linear element Objectives To unerstan the volt (V ) ampere ( A ) characteristics of linear an nonlinear elements. Concept

More information

Conservation laws a simple application to the telegraph equation

Conservation laws a simple application to the telegraph equation J Comput Electron 2008 7: 47 51 DOI 10.1007/s10825-008-0250-2 Conservation laws a simple application to the telegraph equation Uwe Norbrock Reinhol Kienzler Publishe online: 1 May 2008 Springer Scienceusiness

More information

Compact Modeling of Graphene Barristor for Digital Integrated Circuit Design

Compact Modeling of Graphene Barristor for Digital Integrated Circuit Design Compact Moeling of Graphene Barristor for Digital Inteate Circuit Design Zhou Zhao, Xinlu Chen, Ashok Srivastava, Lu Peng Division of Electrical an Computer Engineering Louisiana State University Baton

More information

ELECTRONIC DEVICES DIODES

ELECTRONIC DEVICES DIODES AGH NVERSTY OF SCENCE AN TECHNOLOGY M. STANSŁAWA STASZCA W KRAKOWE Faculty of Computer Science, Elelctronics an Telecommunications EPARTMENT OF ELECTRONCS ELECTRONC EVCES Piotr ziurzia, Ph.. C-3, room

More information

CHAPTER 3 DIODES. NTUEE Electronics L. H. Lu 3-1

CHAPTER 3 DIODES. NTUEE Electronics L. H. Lu 3-1 CHAPER 3 OE Chapte Outline 3.1 he eal ioe 3.2 eminal Chaacteistics of Junction ioes 3.3 Moeling the ioe Fowa Chaacteistics 3.4 Opeation in the Reese Beakown Region ene ioes 3.5 Rectifie Cicuits 3.6 Limiting

More information

Alpha Particle scattering

Alpha Particle scattering Introuction Alpha Particle scattering Revise Jan. 11, 014 In this lab you will stuy the interaction of α-particles ( 4 He) with matter, in particular energy loss an elastic scattering from a gol target

More information

A Parametric Device Study for SiC Power Electronics

A Parametric Device Study for SiC Power Electronics A Parametric evice Stuy for SiC Power Electronics Burak Ozpineci urak@ieee.org epartment of Electrical an Computer Engineering The University of Tennessee Knoxville TN 7996- Leon M. Tolert tolert@utk.eu

More information

ECE321 Electronics I

ECE321 Electronics I ECE321 Electronics I Lecture 4: Physics of Semiconductor iodes Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Tuesday 2:00-3:00PM or by appointment E-mail: pzarkesh.unm.edu Slide: 1 Review of Last

More information

24th European Photovoltaic Solar Energy Conference, September 2009, Hamburg, Germany

24th European Photovoltaic Solar Energy Conference, September 2009, Hamburg, Germany 4th European hotovoltaic Solar Energy Conference, 1-5 September 9, Hamburg, Germany LOCK-IN THERMOGRAHY ON CRYSTALLINE SILICON ON GLASS (CSG) THIN FILM MODULES: INFLUENCE OF ELTIER CONTRIBUTIONS H. Straube,

More information

PARALLEL-PLATE CAPACITATOR

PARALLEL-PLATE CAPACITATOR Physics Department Electric an Magnetism Laboratory PARALLEL-PLATE CAPACITATOR 1. Goal. The goal of this practice is the stuy of the electric fiel an electric potential insie a parallelplate capacitor.

More information

water adding dye partial mixing homogenization time

water adding dye partial mixing homogenization time iffusion iffusion is a process of mass transport that involves the movement of one atomic species into another. It occurs by ranom atomic jumps from one position to another an takes place in the gaseous,

More information

EE 230 Lecture 20. Nonlinear Op Amp Applications. The Comparator Nonlinear Analysis Methods

EE 230 Lecture 20. Nonlinear Op Amp Applications. The Comparator Nonlinear Analysis Methods EE 230 Lecture 20 Nonlinear Op Amp Applications The Comparator Nonlinear Analysis Methods Quiz 14 What is the major purpose of compensation when designing an operatinal amplifier? And the number is? 1

More information

APPROXIMATE SOLUTION FOR TRANSIENT HEAT TRANSFER IN STATIC TURBULENT HE II. B. Baudouy. CEA/Saclay, DSM/DAPNIA/STCM Gif-sur-Yvette Cedex, France

APPROXIMATE SOLUTION FOR TRANSIENT HEAT TRANSFER IN STATIC TURBULENT HE II. B. Baudouy. CEA/Saclay, DSM/DAPNIA/STCM Gif-sur-Yvette Cedex, France APPROXIMAE SOLUION FOR RANSIEN HEA RANSFER IN SAIC URBULEN HE II B. Bauouy CEA/Saclay, DSM/DAPNIA/SCM 91191 Gif-sur-Yvette Ceex, France ABSRAC Analytical solution in one imension of the heat iffusion equation

More information

Physics 505 Electricity and Magnetism Fall 2003 Prof. G. Raithel. Problem Set 3. 2 (x x ) 2 + (y y ) 2 + (z + z ) 2

Physics 505 Electricity and Magnetism Fall 2003 Prof. G. Raithel. Problem Set 3. 2 (x x ) 2 + (y y ) 2 + (z + z ) 2 Physics 505 Electricity an Magnetism Fall 003 Prof. G. Raithel Problem Set 3 Problem.7 5 Points a): Green s function: Using cartesian coorinates x = (x, y, z), it is G(x, x ) = 1 (x x ) + (y y ) + (z z

More information

EE1320: Measurement Science Lecture 2: Sensors

EE1320: Measurement Science Lecture 2: Sensors EE1320: Measurement Science Lecture 2: Sensors Dr. ir. Michiel Pertijs, Electronic Instrumentation Laboratory April 26, 2013 Delft University of Technology Challenge the future Course program 2013 week

More information

Adjoint Transient Sensitivity Analysis in Circuit Simulation

Adjoint Transient Sensitivity Analysis in Circuit Simulation Ajoint Transient Sensitivity Analysis in Circuit Simulation Z. Ilievski 1, H. Xu 1, A. Verhoeven 1, E.J.W. ter Maten 1,2, W.H.A. Schilers 1,2 an R.M.M. Mattheij 1 1 Technische Universiteit Einhoven; e-mail:

More information

Revisiting the Charge Concept in HBT/BJT Models

Revisiting the Charge Concept in HBT/BJT Models evisiting the Charge Concept in HBT/BJT Moels Zoltan Huska an Ehrenfrie Seebacher austriamicrosystems AG 23r Bipolar Arbeitkeis BipAK Meeting at STM Crolles, France, 5 October 2 Outline recalling the junction

More information

CHARACTERIZATION OF THERMAL INTERFACE MATERIALS TO SUPPORT THERMAL SIMULATION

CHARACTERIZATION OF THERMAL INTERFACE MATERIALS TO SUPPORT THERMAL SIMULATION Nice, Côte Azur, France, 7-9 September 006 CHARACTERIZATION OF THERMAL INTERFACE MATERIALS TO SUPPORT THERMAL SIMULATION Ralph Schacht 1, Daniel May 1, Bernhar Wunerle 1, Olaf Wittler, Astri Gollhart 1,

More information

SYNCHRONOUS SEQUENTIAL CIRCUITS

SYNCHRONOUS SEQUENTIAL CIRCUITS CHAPTER SYNCHRONOUS SEUENTIAL CIRCUITS Registers an counters, two very common synchronous sequential circuits, are introuce in this chapter. Register is a igital circuit for storing information. Contents

More information

THE USE OF KIRCHOFF S CURRENT LAW AND CUT-SET EQUATIONS IN THE ANALYSIS OF BRIDGES AND TRUSSES

THE USE OF KIRCHOFF S CURRENT LAW AND CUT-SET EQUATIONS IN THE ANALYSIS OF BRIDGES AND TRUSSES Session TH US O KIRCHO S CURRNT LAW AND CUT-ST QUATIONS IN TH ANALYSIS O BRIDGS AND TRUSSS Ravi P. Ramachanran an V. Ramachanran. Department of lectrical an Computer ngineering, Rowan University, Glassboro,

More information

Harmonic Modelling of Thyristor Bridges using a Simplified Time Domain Method

Harmonic Modelling of Thyristor Bridges using a Simplified Time Domain Method 1 Harmonic Moelling of Thyristor Briges using a Simplifie Time Domain Metho P. W. Lehn, Senior Member IEEE, an G. Ebner Abstract The paper presents time omain methos for harmonic analysis of a 6-pulse

More information

A Novel Decoupled Iterative Method for Deep-Submicron MOSFET RF Circuit Simulation

A Novel Decoupled Iterative Method for Deep-Submicron MOSFET RF Circuit Simulation A Novel ecouple Iterative Metho for eep-submicron MOSFET RF Circuit Simulation CHUAN-SHENG WANG an YIMING LI epartment of Mathematics, National Tsing Hua University, National Nano evice Laboratories, an

More information

Based on transitions between bands electrons delocalized rather than bound to particular atom

Based on transitions between bands electrons delocalized rather than bound to particular atom EE31 Lasers I 1/01/04 #6 slie 1 Review: Semiconuctor Lasers Base on transitions between bans electrons elocalize rather than boun to particular atom transitions between bans Direct electrical pumping high

More information

Design A Robust Power System Stabilizer on SMIB Using Lyapunov Theory

Design A Robust Power System Stabilizer on SMIB Using Lyapunov Theory Design A Robust Power System Stabilizer on SMIB Using Lyapunov Theory Yin Li, Stuent Member, IEEE, Lingling Fan, Senior Member, IEEE Abstract This paper proposes a robust power system stabilizer (PSS)

More information

Design and Application of Fault Current Limiter in Iran Power System Utility

Design and Application of Fault Current Limiter in Iran Power System Utility Australian Journal of Basic an Applie Sciences, 7(): 76-8, 13 ISSN 1991-8178 Design an Application of Fault Current Limiter in Iran Power System Utility M. Najafi, M. Hoseynpoor Department of Electrical

More information

Efficient Macro-Micro Scale Coupled Modeling of Batteries

Efficient Macro-Micro Scale Coupled Modeling of Batteries A00 Journal of The Electrochemical Society, 15 10 A00-A008 005 0013-651/005/1510/A00/7/$7.00 The Electrochemical Society, Inc. Efficient Macro-Micro Scale Couple Moeling of Batteries Venkat. Subramanian,*,z

More information

(3-3) = (Gauss s law) (3-6)

(3-3) = (Gauss s law) (3-6) tatic Electric Fiels Electrostatics is the stuy of the effects of electric charges at rest, an the static electric fiels, which are cause by stationary electric charges. In the euctive approach, few funamental

More information

FET Inrush Protection

FET Inrush Protection FET Inrush Protection Chris Pavlina https://semianalog.com 2015-11-23 CC0 1.0 Universal Abstract It is possible to use a simple one-transistor FET circuit to provie inrush protection for low voltage DC

More information

EE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits

EE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits EE 330 Lecture 22 Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits Exam 2 Friday March 9 Exam 3 Friday April 13 Review Session for Exam 2: 6:00

More information

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EECS 40 Spring 2000 Introduction to Microelectronic Devices Prof. King MIDTERM EXAMINATION

More information

Chapter 6. Electromagnetic Oscillations and Alternating Current

Chapter 6. Electromagnetic Oscillations and Alternating Current hapter 6 Electromagnetic Oscillations an Alternating urrent hapter 6: Electromagnetic Oscillations an Alternating urrent (hapter 31, 3 in textbook) 6.1. Oscillations 6.. The Electrical Mechanical Analogy

More information

Lectures - Week 10 Introduction to Ordinary Differential Equations (ODES) First Order Linear ODEs

Lectures - Week 10 Introduction to Ordinary Differential Equations (ODES) First Order Linear ODEs Lectures - Week 10 Introuction to Orinary Differential Equations (ODES) First Orer Linear ODEs When stuying ODEs we are consiering functions of one inepenent variable, e.g., f(x), where x is the inepenent

More information

Finite element analysis of electromagnetic bulging of sheet metals

Finite element analysis of electromagnetic bulging of sheet metals International Journal of Scientific & Engineering Research Volume 3, Issue 2, Febraury-212 1 Finite element analysis of electromagnetic bulging of sheet metals Ali M. Abelhafeez, M. M. Nemat-Alla, M. G.

More information

Nonlinear Adaptive Ship Course Tracking Control Based on Backstepping and Nussbaum Gain

Nonlinear Adaptive Ship Course Tracking Control Based on Backstepping and Nussbaum Gain Nonlinear Aaptive Ship Course Tracking Control Base on Backstepping an Nussbaum Gain Jialu Du, Chen Guo Abstract A nonlinear aaptive controller combining aaptive Backstepping algorithm with Nussbaum gain

More information

Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

More information

SiC-based Power Converters for High Temperature Applications

SiC-based Power Converters for High Temperature Applications Materials Science orum Vols. 556-557 (7) pp 965-97 online at http://www.scientific.net (7) Trans Tech Publications Switzerlan Online available since 7/Sep/5 -base Power Converters for High Temperature

More information

Control of a PEM Fuel Cell Based on a Distributed Model

Control of a PEM Fuel Cell Based on a Distributed Model 21 American Control Conference Marriott Waterfront, Baltimore, MD, USA June 3-July 2, 21 FrC1.6 Control of a PEM Fuel Cell Base on a Distribute Moel Michael Mangol Abstract To perform loa changes in proton

More information

Physics 2212 K Quiz #2 Solutions Summer 2016

Physics 2212 K Quiz #2 Solutions Summer 2016 Physics 1 K Quiz # Solutions Summer 016 I. (18 points) A positron has the same mass as an electron, but has opposite charge. Consier a positron an an electron at rest, separate by a istance = 1.0 nm. What

More information

'HVLJQ &RQVLGHUDWLRQ LQ 0DWHULDO 6HOHFWLRQ 'HVLJQ 6HQVLWLYLW\,1752'8&7,21

'HVLJQ &RQVLGHUDWLRQ LQ 0DWHULDO 6HOHFWLRQ 'HVLJQ 6HQVLWLYLW\,1752'8&7,21 Large amping in a structural material may be either esirable or unesirable, epening on the engineering application at han. For example, amping is a esirable property to the esigner concerne with limiting

More information

Neural Network Training By Gradient Descent Algorithms: Application on the Solar Cell

Neural Network Training By Gradient Descent Algorithms: Application on the Solar Cell ISSN: 319-8753 Neural Networ Training By Graient Descent Algorithms: Application on the Solar Cell Fayrouz Dhichi*, Benyounes Ouarfi Department of Electrical Engineering, EEA&TI laboratory, Faculty of

More information

Statics, Quasistatics, and Transmission Lines

Statics, Quasistatics, and Transmission Lines CHAPTER 6 Statics, Quasistatics, an Transmission Lines In the preceing chapters, we learne that the phenomenon of wave propagation is base upon the interaction between the time-varying or ynamic electric

More information

An inductance lookup table application for analysis of reluctance stepper motor model

An inductance lookup table application for analysis of reluctance stepper motor model ARCHIVES OF ELECTRICAL ENGINEERING VOL. 60(), pp. 5- (0) DOI 0.478/ v07-0-000-y An inuctance lookup table application for analysis of reluctance stepper motor moel JAKUB BERNAT, JAKUB KOŁOTA, SŁAWOMIR

More information

FIRST ORDER QUASI STATIC MOSFET CHANNEL CAPACITANCE MODEL SAMEER SHARMA

FIRST ORDER QUASI STATIC MOSFET CHANNEL CAPACITANCE MODEL SAMEER SHARMA FIRST ORDER QUASI STATIC MOSFET CHANNEL CAPACITANCE MODEL By SAMEER SHARMA Bachelor of Science in Electrical Engineering Punjab Engineering College Chanigarh, Inia 1994 Master of Science in Electrical

More information

AN3400 Application note

AN3400 Application note Application note Analysis an simulation of a BJT complementary pair in a self-oscillating CFL solution ntrouction The steay-state oscillation of a novel zero-voltages switching (ZS) clampe-voltage (C)

More information

EE 435. Lecture 44. References

EE 435. Lecture 44. References EE 5 Lecture eferences . eview from last lecture. Consider oltage eferences DD M BIAS oltage eference Circuit EF EF M DD, T reference EF DD T 0 WL WL W L W L Observation ariables with units olts needed

More information

Physics for Scientists & Engineers 2

Physics for Scientists & Engineers 2 Capacitors Physics for Scientists & Engineers 2 Spring Semester 2005 Lecture 12 Capacitors are evices that can store electrical energy Capacitors are use in many every-ay applications Heart efibrillators

More information

AIEEE Physics Model Question Paper

AIEEE Physics Model Question Paper IEEE Physics Moel Question Paper ote: Question o. 11 to 1 an 1 to consist of Eight (8) marks each for each correct response an remaining questions consist of Four (4) marks. ¼ marks will be eucte for inicating

More information

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits Spring 2008 MIDTERM EXAMINATION #1 Time

More information

EE 230 Lecture 28. Nonlinear Circuits using Diodes. Rectifiers Precision Rectifiers Nonlinear function generators

EE 230 Lecture 28. Nonlinear Circuits using Diodes. Rectifiers Precision Rectifiers Nonlinear function generators EE 230 Lecure 28 Nonlinear Circuis using ioes ecifiers Precision ecifiers Nonlinear funcion generaors Quiz 8 f a ioe has a value of S =E-4A an he ioe volage is.65v, wha will be he ioe curren if operaing

More information

1. The electron volt is a measure of (A) charge (B) energy (C) impulse (D) momentum (E) velocity

1. The electron volt is a measure of (A) charge (B) energy (C) impulse (D) momentum (E) velocity AP Physics Multiple Choice Practice Electrostatics 1. The electron volt is a measure of (A) charge (B) energy (C) impulse (D) momentum (E) velocity. A soli conucting sphere is given a positive charge Q.

More information

Thermal conductivity of graded composites: Numerical simulations and an effective medium approximation

Thermal conductivity of graded composites: Numerical simulations and an effective medium approximation JOURNAL OF MATERIALS SCIENCE 34 (999)5497 5503 Thermal conuctivity of grae composites: Numerical simulations an an effective meium approximation P. M. HUI Department of Physics, The Chinese University

More information

Lecture 12: FET AC Properties

Lecture 12: FET AC Properties Lecture 1: FET AC Properties 016-0- Lecture 11, Hih Spee evices 016 1 Lecture 1: FET AC Properties Quasi-static operation iffusive an Ballistic FETs y-parameters Hybri p-moel Non-quasi Static effects Reain

More information

ECE PN Junctions and Diodes

ECE PN Junctions and Diodes ECE 342 2. PN Junctions and iodes Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu ECE 342 Jose Schutt Aine 1 B: material dependent parameter = 5.4 10

More information

Mechanics Physics 151

Mechanics Physics 151 Mechanics Physics 151 Lecture 3 Continuous Systems an Fiels (Chapter 13) Where Are We Now? We ve finishe all the essentials Final will cover Lectures 1 through Last two lectures: Classical Fiel Theory

More information

Mathematical Review Problems

Mathematical Review Problems Fall 6 Louis Scuiero Mathematical Review Problems I. Polynomial Equations an Graphs (Barrante--Chap. ). First egree equation an graph y f() x mx b where m is the slope of the line an b is the line's intercept

More information

EE 230 Lecture 21. Nonlinear Op Amp Applications. Nonlinear analysis methods Comparators with Hysteresis

EE 230 Lecture 21. Nonlinear Op Amp Applications. Nonlinear analysis methods Comparators with Hysteresis EE 230 Lecture 2 Nonlinear Op Amp Applications Nonlinear analysis methods Comparators with Hysteresis Quiz 5 Plot the transfer charactristics of the following circuit. Assume the op amp has =2 and SATL

More information

CURRENT ELECTRICITY Q.1

CURRENT ELECTRICITY Q.1 CUENT EECTCTY Q. Define Electric current an its unit.. Electric Current t can be efine as the time rate of flow of charge in a conuctor is calle Electric Current. The amount of flow of charge Q per unit

More information

EE301 Electronics I , Fall

EE301 Electronics I , Fall EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials

More information

Schrödinger s equation.

Schrödinger s equation. Physics 342 Lecture 5 Schröinger s Equation Lecture 5 Physics 342 Quantum Mechanics I Wenesay, February 3r, 2010 Toay we iscuss Schröinger s equation an show that it supports the basic interpretation of

More information

Thermal runaway during blocking

Thermal runaway during blocking Thermal runaway uring blocking CES_stable CES ICES_stable ICES k 6.5 ma 13 6. 12 5.5 11 5. 1 4.5 9 4. 8 3.5 7 3. 6 2.5 5 2. 4 1.5 3 1. 2.5 1. 6 12 18 24 3 36 s Thermal runaway uring blocking Application

More information

THE VAN KAMPEN EXPANSION FOR LINKED DUFFING LINEAR OSCILLATORS EXCITED BY COLORED NOISE

THE VAN KAMPEN EXPANSION FOR LINKED DUFFING LINEAR OSCILLATORS EXCITED BY COLORED NOISE Journal of Soun an Vibration (1996) 191(3), 397 414 THE VAN KAMPEN EXPANSION FOR LINKED DUFFING LINEAR OSCILLATORS EXCITED BY COLORED NOISE E. M. WEINSTEIN Galaxy Scientific Corporation, 2500 English Creek

More information

M7 ELECTROLUMINESCENCE OF POLYMERS

M7 ELECTROLUMINESCENCE OF POLYMERS 1 Avance ab Course: Electroluminescence University of Potsam Faculty of Mathematics an Sciences Institute of Physics M7 EECTROUMINESCENCE OF POYMERS I. Introuction The recombination of holes an electrons

More information

From last time. Attention. Capacitance. Spherical capacitor. Energy stored in capacitors. How do we charge a capacitor? Today:

From last time. Attention. Capacitance. Spherical capacitor. Energy stored in capacitors. How do we charge a capacitor? Today: Attention From last time More on electric potential an connection to Efiel How to calculate Efiel from V Capacitors an Capacitance switch off computers in the room an be prepare to a very lou noise Toay:

More information

Chapter 10 Sinusoidal Steady State Analysis Chapter Objectives:

Chapter 10 Sinusoidal Steady State Analysis Chapter Objectives: Chapter 10 Sinusoidal Steady State Analysis Chapter Objectives: Apply previously learn circuit techniques to sinusoidal steady-state analysis. Learn how to apply nodal and mesh analysis in the frequency

More information

15.9 TWO-PORTS* . (15.114) R Thout = v 2a

15.9 TWO-PORTS* . (15.114) R Thout = v 2a 15.9 TWOPORTS* It should be obvious by now that circuits with dependent sources can perform much more interesting and useful signal processing than those constructed solely from twoterminal resistive elements.

More information

AN INTRODUCTION TO AIRCRAFT WING FLUTTER Revision A

AN INTRODUCTION TO AIRCRAFT WING FLUTTER Revision A AN INTRODUCTION TO AIRCRAFT WIN FLUTTER Revision A By Tom Irvine Email: tomirvine@aol.com January 8, 000 Introuction Certain aircraft wings have experience violent oscillations uring high spee flight.

More information

Switching Time Optimization in Discretized Hybrid Dynamical Systems

Switching Time Optimization in Discretized Hybrid Dynamical Systems Switching Time Optimization in Discretize Hybri Dynamical Systems Kathrin Flaßkamp, To Murphey, an Sina Ober-Blöbaum Abstract Switching time optimization (STO) arises in systems that have a finite set

More information

5-4 Electrostatic Boundary Value Problems

5-4 Electrostatic Boundary Value Problems 11/8/4 Section 54 Electrostatic Bounary Value Problems blank 1/ 5-4 Electrostatic Bounary Value Problems Reaing Assignment: pp. 149-157 Q: A: We must solve ifferential equations, an apply bounary conitions

More information

Situation awareness of power system based on static voltage security region

Situation awareness of power system based on static voltage security region The 6th International Conference on Renewable Power Generation (RPG) 19 20 October 2017 Situation awareness of power system base on static voltage security region Fei Xiao, Zi-Qing Jiang, Qian Ai, Ran

More information

A Simple Model for the Calculation of Plasma Impedance in Atmospheric Radio Frequency Discharges

A Simple Model for the Calculation of Plasma Impedance in Atmospheric Radio Frequency Discharges Plasma Science an Technology, Vol.16, No.1, Oct. 214 A Simple Moel for the Calculation of Plasma Impeance in Atmospheric Raio Frequency Discharges GE Lei ( ) an ZHANG Yuantao ( ) Shanong Provincial Key

More information

Modeling and analysis of hydrogen permeation in mixed proton electronic conductors

Modeling and analysis of hydrogen permeation in mixed proton electronic conductors Chemical Engineering Science 58 (2003 1977 1988 www.elsevier.com/locate/ces Moeling an analysis of hyrogen permeation in mixe proton electronic conuctors Lin Li a;b;1, Enrique Iglesia a;b; a Department

More information

Introduction Basic principles Finite element formulation Nonlinear algorithms Validation & examples Oofelie::MEMS, driven by SAMCEF Field Perspectives

Introduction Basic principles Finite element formulation Nonlinear algorithms Validation & examples Oofelie::MEMS, driven by SAMCEF Field Perspectives Non linear behavior of electrostatically actuate micro-structures Dr. Ir. Stéphane Paquay, Open Engineering SA Dr. Ir. Véronique Rochus, ULg (LTAS-VIS) Dr. Ir. Stefanie Gutschmit, ULg (LTAS-VIS) Outline

More information

EE 330 Lecture 20. Bipolar Device Modeling

EE 330 Lecture 20. Bipolar Device Modeling 330 Lecture 20 ipolar Device Modeling xam 2 Friday March 9 xam 3 Friday April 13 Review from Last Lecture ipolar Transistors npn stack pnp stack ipolar Devices Show asic Symmetry lectrical Properties not

More information

A Quantitative Analysis of Coupling for a WPT System Including Dielectric/Magnetic Materials

A Quantitative Analysis of Coupling for a WPT System Including Dielectric/Magnetic Materials Progress In Electromagnetics Research Letters, Vol. 72, 127 134, 2018 A Quantitative Analysis of Coupling for a WPT System Incluing Dielectric/Magnetic Materials Yangjun Zhang *, Tatsuya Yoshiawa, an Taahiro

More information

EE-201 Review Exam I. 1. The voltage Vx in the circuit below is: (1) 3V (2) 2V (3) -2V (4) 1V (5) -1V (6) None of above

EE-201 Review Exam I. 1. The voltage Vx in the circuit below is: (1) 3V (2) 2V (3) -2V (4) 1V (5) -1V (6) None of above EE-201, Review Probs Test 1 page-1 Spring 98 EE-201 Review Exam I Multiple Choice (5 points each, no partial credit.) 1. The voltage Vx in the circuit below is: (1) 3V (2) 2V (3) -2V (4) 1V (5) -1V (6)

More information

Stable and compact finite difference schemes

Stable and compact finite difference schemes Center for Turbulence Research Annual Research Briefs 2006 2 Stable an compact finite ifference schemes By K. Mattsson, M. Svär AND M. Shoeybi. Motivation an objectives Compact secon erivatives have long

More information

EE40. Lec 3. Basic Circuit Analysis. Prof. Nathan Cheung. Reading: Hambley Chapter 2

EE40. Lec 3. Basic Circuit Analysis. Prof. Nathan Cheung. Reading: Hambley Chapter 2 EE40 Lec 3 Basic Circuit Analysis Prof. Nathan Cheung 09/03/009 eading: Hambley Chapter Slide Outline Chapter esistors in Series oltage Divider Conductances in Parallel Current Divider Node-oltage Analysis

More information

A transmission problem for the Timoshenko system

A transmission problem for the Timoshenko system Volume 6, N., pp. 5 34, 7 Copyright 7 SBMAC ISSN -85 www.scielo.br/cam A transmission problem for the Timoshenko system C.A. RAPOSO, W.D. BASTOS an M.L. SANTOS 3 Department of Mathematics, UFSJ, Praça

More information

Istituto di Fotonica e Nanotecnologie

Istituto di Fotonica e Nanotecnologie Istituto i Fotonica e Nanotecnologie Atomic Scale Nanoelectronics Enrico Prati, PhD Research Scientist at Istituto i Fotonica e Nanotecnologie Milano, Italy Visiting Scholar Wasea University Tokyo, Japan

More information

05 The Continuum Limit and the Wave Equation

05 The Continuum Limit and the Wave Equation Utah State University DigitalCommons@USU Founations of Wave Phenomena Physics, Department of 1-1-2004 05 The Continuum Limit an the Wave Equation Charles G. Torre Department of Physics, Utah State University,

More information

Bipolar Junction Transistor (BJT) - Introduction

Bipolar Junction Transistor (BJT) - Introduction Bipolar Junction Transistor (BJT) - Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification

More information

ELECTRONIC DEVICES AND CIRCUITS SUMMARY

ELECTRONIC DEVICES AND CIRCUITS SUMMARY ELECTRONIC DEVICES AND CIRCUITS SUMMARY Classification of Materials: Insulator: An insulator is a material that offers a very low level (or negligible) of conductivity when voltage is applied. Eg: Paper,

More information

ECE 422 Power System Operations & Planning 7 Transient Stability

ECE 422 Power System Operations & Planning 7 Transient Stability ECE 4 Power System Operations & Planning 7 Transient Stability Spring 5 Instructor: Kai Sun References Saaat s Chapter.5 ~. EPRI Tutorial s Chapter 7 Kunur s Chapter 3 Transient Stability The ability of

More information

Essential Considerations for Buckling Analysis

Essential Considerations for Buckling Analysis Worlwie Aerospace Conference an Technology Showcase, Toulouse, France, Sept. 24-26, 2001 Essential Consierations for Buckling Analysis 2001-120 Sang H. Lee MSC.Software Corporation, 2 MacArthur Place,

More information

Electronic Power Conversion

Electronic Power Conversion Electronic Power Conersion Switch Moe DC-DC Conerters with Isolation Challenge the future Switch moe c-c conerters Frequent requirements: regulate output isolation (safety) multiple outputs Solutions:

More information

Dynamics of the synchronous machine

Dynamics of the synchronous machine ELEC0047 - Power system ynamics, control an stability Dynamics of the synchronous machine Thierry Van Cutsem t.vancutsem@ulg.ac.be www.montefiore.ulg.ac.be/~vct These slies follow those presente in course

More information

Synchronization of Diffusively Coupled Oscillators: Theory and Experiment

Synchronization of Diffusively Coupled Oscillators: Theory and Experiment American Journal of Electrical an Electronic Engineering 2015 Vol 3 No 2 37-3 Available online at http://pubssciepubcom/ajeee/3/2/3 Science an Eucation Publishing DOI:12691/ajeee-3-2-3 Synchronization

More information

Entanglement is not very useful for estimating multiple phases

Entanglement is not very useful for estimating multiple phases PHYSICAL REVIEW A 70, 032310 (2004) Entanglement is not very useful for estimating multiple phases Manuel A. Ballester* Department of Mathematics, University of Utrecht, Box 80010, 3508 TA Utrecht, The

More information

4. CONTROL OF ZERO-SEQUENCE CURRENT IN PARALLEL THREE-PHASE CURRENT-BIDIRECTIONAL CONVERTERS

4. CONTROL OF ZERO-SEQUENCE CURRENT IN PARALLEL THREE-PHASE CURRENT-BIDIRECTIONAL CONVERTERS 4. CONRO OF ZERO-SEQUENCE CURREN IN PARAE HREE-PHASE CURREN-BIDIRECIONA CONVERERS 4. A NOVE ZERO-SEQUENCE CURREN CONRO 4.. Zero-Sequence Dynamics he parallel boost rectifier moel in Figure.4 an the parallel

More information

Problem 3.84 of Bergman. Consider one-dimensional conduction in a plane composite wall. The outer surfaces are exposed to a fluid at T

Problem 3.84 of Bergman. Consider one-dimensional conduction in a plane composite wall. The outer surfaces are exposed to a fluid at T 1/10 bergman3-84.xmc Problem 3.84 of Bergman. Consier one-imensional conuction in a plane composite wall. The outer surfaces are expose to a flui at T 5 C an a convection heat transfer coefficient of h1000

More information

CHAPTER 4. Circuit Theorems

CHAPTER 4. Circuit Theorems CHAPTER 4 Circuit Theorems The growth in areas of application of electrical circuits has led to an evolution from simple to complex circuits. To handle such complexity, engineers over the years have developed

More information

Short Intro to Coordinate Transformation

Short Intro to Coordinate Transformation Short Intro to Coorinate Transformation 1 A Vector A vector can basically be seen as an arrow in space pointing in a specific irection with a specific length. The following problem arises: How o we represent

More information