Herre van der Zant. interplay between molecular spin and electron transport (molecular spintronics) Gate

Size: px
Start display at page:

Download "Herre van der Zant. interplay between molecular spin and electron transport (molecular spintronics) Gate"

Transcription

1 transport through the single molecule magnet Mn12 Herre van der Zant H.B. Heersche, Z. de Groot (Delft) C. Romeike, M. Wegewijs (RWTH Aachen) D. Barreca, E. Tondello (Padova) L. Zobbi, A. Cornia (Modena) Source Gate Drain Molecular Electronics and Devices group interplay between molecular spin and electron transport (molecular spintronics)

2 transport through single molecules LUMO HOMO

3 molecular transistors: quantum dots in the weak coupling limit Kondo in V 2 complex: Liang et al., Nature 417, 725 (22) Co-ion:. Park et al., Nature 417, 722 (22) N N+1 several oxidation states of OPV-5 Kubatkin et al., Nature 425, 698 (23) electron-phonon coupling inc 6 H. Park et al., Nature 47 (2) 57

4 quantum dots: Coulomb blockade and discrete energy spectrum small box occupied by electrons (holes) box (island) has discrete energy spectrum island weakly coupled to leads: Coulomb blockade level broadening (Γ) << charging energy (E c ) single molecule self-assembled QD semiconducting QD nanotube 1 nm 1 nm 1 nm 1µm

5 Coulomb blockade in quantum dots SOURCE e DRAIN ISLAND GATE V sd V g I V V G C G QD R L,C L R R,C R dot coupled via tunnel barriers to source and drain reservoirs and capacitively to gate electrode µ(n +1) +E c µ (N µ ) ( N) µ S µ µd Sµ(N-1) : level spacing E c : charging energy γ: level broadening V g

6 stability diagram and Coulomb diamonds linear regime µ(n +1) (N µ ) ( N) µ (N ) Γ L Γ R µ S µ µ S µ S µd µ ( N) µ D Sµ(N-1) +E c two knobs : V SD and V gate state contributes to transport if µ s > µ(n) > µ d V g V g di/dv sd V sd E add N-1 N N+1 V g Coulomb diamonds with no current

7 level spectroscopy Non-linear regime µ(n +1) µ e (N ) E mµs S µ(n) DE m(n) mµ D µs m (N) mµ D D two knobs : V SD and V gate state contributes to transport if µ s > µ(n) > µ d V sd di/dv sd E E add N-1 N N+1 excited states result in extra lines in stability diagram (red) excited states can be electronic, vibrational, or spin related V g

8 single-wall nanotubes different regimes as a function of gate voltage strong coupling (R~R Q ), large γ blurred CB diamonds Fabry-Perot, Kondo physics 4-fold filling weak coupling (R>>R Q ), small γ sharp CB diamonds spectroscopy bias voltage Kondo peak singlet-triplet Kondo co-tunnel line excited state gate voltage

9 experimental approach sample preparation at room temperature: nanogap fabrication with electromigration of gold wires with self-assembled monolayers ( trapping a falling molecule ) measurement system: low-temperature He-4 probe down to 1.5 K with home-made low noise electronics (Desert Cryogenics Probe-Station for screening; near future dilution fridge) measurements gate sweeps and identify interesting devices stability diagram: current vs. bias and gate voltage (di/dv numerically) lock-in measurement (di/dv directly) temperature- and magnetic field dependent measurements currents typically in the pa range; electron resides on the molecule for 1-1 ns

10 gap fabrication: electromigration on top of an aluminium gate Al 2 O 3 Au Source Gate Drain SiO 2 V V g 1 µm

11 visualization of electromigration of gold wires (TEM) Au pattern Si 3 N 4 Si substrate V b R V H.B. Heersche et al., to be published

12 electromigration: : control of gap resistance I (ma) R S = 3 Ω I (ma) R S = 5 Ω Vb (V) breaks all the way: gap > 1nm Vb (V) breaks half way: few-atom contact V R S V R (Ohm) 1.E+12 1.E+1 1.E+8 1.E+6 1.E+4 1.E+2 1.E Number

13 electromigration: : reproducibly single-atom contacts G (2e^2/h) Vb (mv) Au Al 2 O 3 1 nm

14 sample preparation: contacting molecules with thiol end groups chip placed in solution self-assembled monolayer forms electromigration creates gap molecule trapped in gap

15 When do we have a molecule between the contacts? addition energy > 1 mev limited number of charge states additional molecular fingerprints: - vibrational modes - spin excitations Diff: \\ \edgar\opv5\25_August5\7_mega.dat in practice: only a few percent of the samples show molecular behavior and of those quite a few show unstable, switchy behavior V b (mv) V g (V)

16 excitations in OPV-5: all lines can be mapped onto Raman spectrum N-1 N N+1 17 mev 82 mev 66 mev 55 mev 42.5 mev 96 mev 81 mev 66 mev 56 mev 44 mev second derivative numerical

17 excitations due to vibrational modes (OPV-5) Raman Spectra cm-1 mev 1 Diff: \\ \edgar\opv5\25_August5\17_megac.dat V b (mv) ±1 mev 25± 1meV 3.5±.5 mev 25±1meV 35±1meV 35±2 mev 25±2 mev 12±.5 mev 7.5±.5meV 12±.5meV 25±2meV 35± 2meV 56±2 mev 47±2 mev Diff: \\ \edgar\opv5\25_August5\17_megac.dat -6-8 V b (mv) V g (V)

18 molecular junction with OPV-3: Kondo V bias (mv) NDR Spin blockade? B = V gate (V) B = 7T V gate (V)

19 inelastic electron scattering probing vibrational modes in OPV-3 electron spectroscopy on a three-terminal device with a single OPV-3 molecule Raman data OPV-3 molecules in solution intensity 14 mev 12 1 wave number cm mev

20 the single molecule magnet Mn-12 H = D ( S + ) 2 N, SSz B4;N,S S+ B. Barbara et al., Journ. Magn. Magn. Mat., 2, 167(1999) Mn12: high spin (S=1) + high D- anisotropy energy barrier ~ 6K (5.6 mev) hysteretic behavior quantum tunneling of magnetization when m states are aligned (Friedman et al., 1996)

21 Mn-12 on a gold surface: ligands with thiols STM image Mn12- derivatives that bind to gold surface have been synthesized by Cornia et al. ligands: HO 2 (CH 2 ) 15 SAc PhSAc after cleaning the gold wires, we put samples in a.1mm solution for ~1h A. Cornia et al., Angew. Chem. Int. Ed., 42, 1645 (23)

22 Coulomb blockade in Mn-12 junctions H.B. Heersche et al. cond-mat/51732 Mn-12PhSAc Mn-12 with two different ligands fingerprints (not observed in any of the other more than 1 devices without or with other molecules) : excitation at 14 mev (unknown origin) low energy excitations (<1 mev ) with strong negative differential conductance V bias (mv) V gate Mn-12C15SAc

23 complete current suppression (CCS) and negative differential resistance (NDR) T = 3 K 2 1 V b (mv) V b (mv) -2.4 V g (V) V g (V) I (pa) -5 not easily explained within usual CB theory and spin blockade! V b (mv)

24 different sample showing NDR (3 mev) ) and excitations at the same energies 2 2 V b (mv) I (pa) T = 1.5 K 1 V g (V) V b (mv)

25 transport: charge (±1) and spin (±1/2) change transport: charge (±1) and spin (±1/2) change I II III IV N+1,D N+1,1.5 N,D N, , ,,, ) ( ) ( 1 (9.5) ± = = ± Σ = N z N z S m N N z N N z N N z N m N m N N N N m S m S D m D m D D N z N z z z z C µ µ µ µ differences in chemical potentials matter transition rates are not the same and are determined by Clebsch-Gordon coefficients 2 z S D N, S = H Christian Romeike, Maarten R. Wegewijs RWTH Aachen

26 model includes different spin manifolds two spin excitations (manifolds) per charge state energy scales N= are known energy scales N=±1 not known S=9 1D=56 K S=1 S=9 4.5 K (DFT) 4±2 K (EPR-exp) N= S=1 Christian Romeike, Maarten R. Wegewijs,RWTH Aachen Park and Pederson, PRB 7 (24) K. Petukhov et al. PRB 7 (24) 54426

27 calculations: new kind of spin blockade 1 V b (mv) -1 n-1 n -1 1 V g (V) V b (mv) n n V g (V) New type of spin blockade: S z, m z selection rules instead of S selection rules only transition rates depend on Clebsch-Gordon coefficients quantum tunneling of magnetization (QTM) enhances or destroys NDC

28 non-degenerate spin multiplets sequential tunneling populates a blocking state that can only be depopulated slowly by a violation of spin-selection rules induced by QTM M = -8 M = -9 M = -9 S=9 S 2 n, D n, S=1 n M = -1 M=1 Cation (N = n-1) (1, 8½) (1, 9½) (, 7½) (, 8½) (, 9½) Neutral (N = n) (, 8) (, 9) (, 1)

29 energy scales 1 V b (mv) CSS: lifted at the energy scale of the magnetic anisotropy barrier (about 5 mev) V g (V) NDR: few mev depends on choice of the anisotropy barrier and the distance between the two manifolds (not a unique combination but the MAB need to be different for the charge states involved)

30 conclusions First transport through a single Mn-12 molecule shows a new kind of spin blockade due to the presence of non-degenerate spin states. It would be exciting to do more systematic studies at lower temperatures in a magnetic field to probe QTM (orientation of molecule with respect to field however not known). Molecular spintronics: start working in parallel on other more simple- molecular magnetic systems. Source Gate Drain molecular quantum dots: transition rates are dependent on the wave functions (vibrational modes, spin states, different charge states) Γ L, R ΓL,R Ψafter Ψbefore 2

31 magnetic field B=7T V b (mv) Field (T) diamond edge is suppressed current increases for neg. bias; decreases for pos. bias magnetic field sweep : magnetic rearrangements?

32 different molecules show distinct different features V bias (mv) V_b (mv) V_g (V) V gate (V)

33 spin blockade Type I: Negative Differential Resistance (NDR) Type II: complete current suppression around zero excited states with maximum spin S=n/2 are involved ground states with spin differing by more than ½ (e.g. S= S =3/2) n+1, S+1/2 n+1, S n, S n, S n-1 S+1/2 n-1 S+1/2 verified in semi-conducting quantum dots (1995)

34 Mn-12: Coulomb-blockade blockade physics with excitations (spin?, vibrations?) 2 V_b (mv) 1-1 Mn(III), S=2 Mn(IV), S=3/2 single-molecule magnet Mn I (pa) V_g (V) V b (mv) Delft unpublished results

35 Coulomb blockade in Mn-12 junctions V_b (mv) Manganese-12 molecule with PhSAc ligands, T=3K V_g (V) B=7T

single-electron electron tunneling (SET)

single-electron electron tunneling (SET) single-electron electron tunneling (SET) classical dots (SET islands): level spacing is NOT important; only the charging energy (=classical effect, many electrons on the island) quantum dots: : level spacing

More information

Cotunneling and Kondo effect in quantum dots. Part I/II

Cotunneling and Kondo effect in quantum dots. Part I/II & NSC Cotunneling and Kondo effect in quantum dots Part I/II Jens Paaske The Niels Bohr Institute & Nano-Science Center Bad Honnef, September, 2010 Dias 1 Lecture plan Part I 1. Basics of Coulomb blockade

More information

Transport through Andreev Bound States in a Superconductor-Quantum Dot-Graphene System

Transport through Andreev Bound States in a Superconductor-Quantum Dot-Graphene System Transport through Andreev Bound States in a Superconductor-Quantum Dot-Graphene System Nadya Mason Travis Dirk, Yung-Fu Chen, Cesar Chialvo Taylor Hughes, Siddhartha Lal, Bruno Uchoa Paul Goldbart University

More information

Single Electron Tunneling Examples

Single Electron Tunneling Examples Single Electron Tunneling Examples Danny Porath 2002 (Schönenberger et. al.) It has long been an axiom of mine that the little things are infinitely the most important Sir Arthur Conan Doyle Books and

More information

Experimental Studies of Single-Molecule Transistors

Experimental Studies of Single-Molecule Transistors Experimental Studies of Single-Molecule Transistors Dan Ralph group at Cornell University Janice Wynn Guikema Texas A&M University Condensed Matter Seminar January 18, 2006 p.1 Cornell Image from http://www.cornell.edu/

More information

Building blocks for nanodevices

Building blocks for nanodevices Building blocks for nanodevices Two-dimensional electron gas (2DEG) Quantum wires and quantum point contacts Electron phase coherence Single-Electron tunneling devices - Coulomb blockage Quantum dots (introduction)

More information

Electronic transport in low dimensional systems

Electronic transport in low dimensional systems Electronic transport in low dimensional systems For example: 2D system l

More information

Quantum Information Processing with Semiconductor Quantum Dots. slides courtesy of Lieven Vandersypen, TU Delft

Quantum Information Processing with Semiconductor Quantum Dots. slides courtesy of Lieven Vandersypen, TU Delft Quantum Information Processing with Semiconductor Quantum Dots slides courtesy of Lieven Vandersypen, TU Delft Can we access the quantum world at the level of single-particles? in a solid state environment?

More information

Coulomb blockade in metallic islands and quantum dots

Coulomb blockade in metallic islands and quantum dots Coulomb blockade in metallic islands and quantum dots Charging energy and chemical potential of a metallic island Coulomb blockade and single-electron transistors Quantum dots and the constant interaction

More information

Quantum Information Processing with Semiconductor Quantum Dots

Quantum Information Processing with Semiconductor Quantum Dots Quantum Information Processing with Semiconductor Quantum Dots slides courtesy of Lieven Vandersypen, TU Delft Can we access the quantum world at the level of single-particles? in a solid state environment?

More information

Kondo Physics in Nanostructures. A.Abdelrahman Department of Physics University of Basel Date: 27th Nov. 2006/Monday meeting

Kondo Physics in Nanostructures. A.Abdelrahman Department of Physics University of Basel Date: 27th Nov. 2006/Monday meeting Kondo Physics in Nanostructures A.Abdelrahman Department of Physics University of Basel Date: 27th Nov. 2006/Monday meeting Kondo Physics in Nanostructures Kondo Effects in Metals: magnetic impurities

More information

Interference: from quantum mechanics to nanotechnology

Interference: from quantum mechanics to nanotechnology Interference: from quantum mechanics to nanotechnology Andrea Donarini L. de Broglie P. M. A. Dirac A photon interferes only with itself Double slit experiment: (London, 1801) T. Young Phil. Trans. R.

More information

Electrical generation and absorption of phonons in carbon nanotubes

Electrical generation and absorption of phonons in carbon nanotubes Electrical generation and absorption of phonons in carbon nanotubes B.J. LeRoy, S.G. Lemay, J. Kong, and C. Dekker Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ,

More information

Temperature dependence of Andreev spectra in a superconducting carbon nanotube quantum dot

Temperature dependence of Andreev spectra in a superconducting carbon nanotube quantum dot Temperature dependence of Andreev spectra in a superconducting carbon nanotube quantum dot A. Kumar, M. Gaim, D. Steininger, A. Levy Yeyati, A. Martín-Rodero, A. K. Hüttel, and C. Strunk Phys. Rev. B 89,

More information

J. Paaske, NBI. What s the problem? Jens Paaske, NBI Dias 1

J. Paaske, NBI. What s the problem? Jens Paaske, NBI Dias 1 Nonequilibrium Quantum Transport What s the problem? Jens Paaske, NBI Dias 1 Basic 3-terminal setup sou urce Three metallic electrodes:? V 1. Emitter (Source) 2. Base (Gate) 3. Collector (Drain)?te ga

More information

Carbon Nanotubes part 2 CNT s s as a toy model for basic science. Niels Bohr Institute School 2005

Carbon Nanotubes part 2 CNT s s as a toy model for basic science. Niels Bohr Institute School 2005 Carbon Nanotubes part 2 CNT s s as a toy model for basic science Niels Bohr Institute School 2005 1 Carbon Nanotubes as a model system 2 Christian Schönenberger University of Basel B. Babic W. Belzig M.

More information

Electron transport through molecular junctions and FHI-aims

Electron transport through molecular junctions and FHI-aims STM m metallic surface Electron transport through molecular junctions and FHI-aims Alexei Bagrets Inst. of Nanotechnology (INT) & Steinbuch Centre for Computing (SCC) @ Karlsruhe Institute of Technology

More information

Single-Molecule Junctions: Vibrational and Magnetic Degrees of Freedom, and Novel Experimental Techniques

Single-Molecule Junctions: Vibrational and Magnetic Degrees of Freedom, and Novel Experimental Techniques Single-Molecule Junctions: Vibrational and Magnetic Degrees of Freedom, and Novel Experimental Techniques Heiko B. Weber Lehrstuhl für Angewandte Physik Friedrich-Alexander-Universität Erlangen-Nürnberg

More information

High-temperature single-electron transistor based on a gold nanoparticle

High-temperature single-electron transistor based on a gold nanoparticle High-temperature single-electron transistor based on a gold nanoparticle SA Dagesyan 1 *, A S Stepanov 2, E S Soldatov 1, G Zharik 1 1 Lomonosov Moscow State University, faculty of physics, Moscow, Russia,

More information

Chapter 8: Coulomb blockade and Kondo physics

Chapter 8: Coulomb blockade and Kondo physics Chater 8: Coulomb blockade and Kondo hysics 1) Chater 15 of Cuevas& Scheer. REFERENCES 2) Charge transort and single-electron effects in nanoscale systems, J.M. Thijssen and H.S.J. Van der Zant, Phys.

More information

Tunneling through magnetic molecules with arbitrary angle between easy axis and magnetic field

Tunneling through magnetic molecules with arbitrary angle between easy axis and magnetic field Tunneling through magnetic molecules with arbitrary angle between easy axis and magnetic field Carsten Timm* Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 6645, USA Received

More information

Ideal Discrete Energy Levels in Synthesized Au. Nanoparticle for Chemically Assembled. Single-Electron Transistors

Ideal Discrete Energy Levels in Synthesized Au. Nanoparticle for Chemically Assembled. Single-Electron Transistors Ideal Discrete Energy Levels in Synthesized Au Nanoparticle for Chemically Assembled Single-Electron Transistors Shinya Kano,, Yasuo Azuma,, Kosuke Maeda,, Daisuke Tanaka,, Masanori Sakamoto,,, Toshiharu

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION Electrical control of single hole spins in nanowire quantum dots V. S. Pribiag, S. Nadj-Perge, S. M. Frolov, J. W. G. van den Berg, I. van Weperen., S. R. Plissard, E. P. A. M. Bakkers and L. P. Kouwenhoven

More information

Nanoelectronics. Topics

Nanoelectronics. Topics Nanoelectronics Topics Moore s Law Inorganic nanoelectronic devices Resonant tunneling Quantum dots Single electron transistors Motivation for molecular electronics The review article Overview of Nanoelectronic

More information

Electron transport through Shiba states induced by magnetic adsorbates on a superconductor

Electron transport through Shiba states induced by magnetic adsorbates on a superconductor Electron transport through Shiba states induced by magnetic adsorbates on a superconductor Michael Ruby, Nino Hatter, Benjamin Heinrich Falko Pientka, Yang Peng, Felix von Oppen, Nacho Pascual, Katharina

More information

Coulomb blockade and single electron tunnelling

Coulomb blockade and single electron tunnelling Coulomb blockade and single electron tunnelling Andrea Donarini Institute of theoretical physics, University of Regensburg Three terminal device Source System Drain Gate Variation of the electrostatic

More information

Microscopy and Spectroscopy with Tunneling Electrons STM. Sfb Kolloquium 23rd October 2007

Microscopy and Spectroscopy with Tunneling Electrons STM. Sfb Kolloquium 23rd October 2007 Microscopy and Spectroscopy with Tunneling Electrons STM Sfb Kolloquium 23rd October 2007 The Tunnel effect T ( E) exp( S Φ E ) Barrier width s Barrier heigth Development: The Inventors 1981 Development:

More information

Charge transport in nanoscale three-terminal devices. 1. Introduction: Three-terminal devices and quantization

Charge transport in nanoscale three-terminal devices. 1. Introduction: Three-terminal devices and quantization 0 0 0 0 harge transport in nanoscale three-terminal devices J.M. Thijssen and H..J. van der Zant Kavli Institute of Nanoscience, elft University of Technology, Lorentzweg, J elft (The Netherlands). Abstract

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION DOI: 10.1038/NNANO.2011.138 Graphene Nanoribbons with Smooth Edges as Quantum Wires Xinran Wang, Yijian Ouyang, Liying Jiao, Hailiang Wang, Liming Xie, Justin Wu, Jing Guo, and

More information

Introduction to Nanotechnology Chapter 5 Carbon Nanostructures Lecture 1

Introduction to Nanotechnology Chapter 5 Carbon Nanostructures Lecture 1 Introduction to Nanotechnology Chapter 5 Carbon Nanostructures Lecture 1 ChiiDong Chen Institute of Physics, Academia Sinica chiidong@phys.sinica.edu.tw 02 27896766 Carbon contains 6 electrons: (1s) 2,

More information

Solid-State Spin Quantum Computers

Solid-State Spin Quantum Computers Solid-State Spin Quantum Computers 1 NV-Centers in Diamond P Donors in Silicon Kane s Computer (1998) P- doped silicon with metal gates Silicon host crystal + 31 P donor atoms + Addressing gates + J- coupling

More information

Single Electron Transistor (SET)

Single Electron Transistor (SET) Single Electron Transistor (SET) e - e - dot C g V g A single electron transistor is similar to a normal transistor (below), except 1) the channel is replaced by a small dot. 2) the dot is separated from

More information

How a single defect can affect silicon nano-devices. Ted Thorbeck

How a single defect can affect silicon nano-devices. Ted Thorbeck How a single defect can affect silicon nano-devices Ted Thorbeck tedt@nist.gov The Big Idea As MOS-FETs continue to shrink, single atomic scale defects are beginning to affect device performance Gate Source

More information

Quantum Confinement in Graphene

Quantum Confinement in Graphene Quantum Confinement in Graphene from quasi-localization to chaotic billards MMM dominikus kölbl 13.10.08 1 / 27 Outline some facts about graphene quasibound states in graphene numerical calculation of

More information

ELECTRON TRANSPORT IN SEMICONDUCTOR QUANTUM DOTS. University of Technology, P.O. Box 5046, 2600 GA DELFT, The Netherlands

ELECTRON TRANSPORT IN SEMICONDUCTOR QUANTUM DOTS. University of Technology, P.O. Box 5046, 2600 GA DELFT, The Netherlands ELECTRON TRANSPORT IN SEMICONDUCTOR QUANTUM DOTS Seigo Tarucha 1, 2, David Guy Austing 2 and Toshimasa Fujisawa 2 and L.P. Kouwenhoven 3 1 Department of Physics and ERATO Mesoscopic Correlation Project

More information

Molecular Electronics 11/17/05

Molecular Electronics 11/17/05 Molecular Electronics 11/17/05 Molecular electronics: definition - Molecules are used in bulk form in a number of prototype devices: Thin film transistors, Prof. Kaniki group Covered by EECS 513: Flat

More information

The Physics of Nanoelectronics

The Physics of Nanoelectronics The Physics of Nanoelectronics Transport and Fluctuation Phenomena at Low Temperatures Tero T. Heikkilä Low Temperature Laboratory, Aalto University, Finland OXFORD UNIVERSITY PRESS Contents List of symbols

More information

Edge conduction in monolayer WTe 2

Edge conduction in monolayer WTe 2 In the format provided by the authors and unedited. DOI: 1.138/NPHYS491 Edge conduction in monolayer WTe 2 Contents SI-1. Characterizations of monolayer WTe2 devices SI-2. Magnetoresistance and temperature

More information

Spin amplification, reading, and writing in transport through anisotropic magnetic molecules

Spin amplification, reading, and writing in transport through anisotropic magnetic molecules PHYSICAL REVIEW B 73, 235304 2006 Spin amplification, reading, and writing in transport through anisotropic magnetic molecules Carsten Timm 1,2, * and Florian Elste 2, 1 Department of Physics and Astronomy,

More information

Coulomb Blockade and Kondo Effect in Nanostructures

Coulomb Blockade and Kondo Effect in Nanostructures Coulomb Blockade and Kondo Effect in Nanostructures Marcin M. Wysokioski 1,2 1 Institute of Physics Albert-Ludwigs-Universität Freiburg 2 Institute of Physics Jagiellonian University, Cracow, Poland 2.VI.2010

More information

Nanoscience, MCC026 2nd quarter, fall Quantum Transport, Lecture 1/2. Tomas Löfwander Applied Quantum Physics Lab

Nanoscience, MCC026 2nd quarter, fall Quantum Transport, Lecture 1/2. Tomas Löfwander Applied Quantum Physics Lab Nanoscience, MCC026 2nd quarter, fall 2012 Quantum Transport, Lecture 1/2 Tomas Löfwander Applied Quantum Physics Lab Quantum Transport Nanoscience: Quantum transport: control and making of useful things

More information

Interaction between a single-molecule

Interaction between a single-molecule Interaction between a single-molecule magnet Mn 12 monolayer and a gold surface 12 Kyungwha Park Department of Physics, Virginia Tech Salvador Barraza-Lopez (postdoc) Michael C. Avery (undergraduate) Supported

More information

Lectures: Condensed Matter II 1 Electronic Transport in Quantum dots 2 Kondo effect: Intro/theory. 3 Kondo effect in nanostructures

Lectures: Condensed Matter II 1 Electronic Transport in Quantum dots 2 Kondo effect: Intro/theory. 3 Kondo effect in nanostructures Lectures: Condensed Matter II 1 Electronic Transport in Quantum dots 2 Kondo effect: Intro/theory. 3 Kondo effect in nanostructures Luis Dias UT/ORNL Lectures: Condensed Matter II 1 Electronic Transport

More information

Nano devices for single photon source and qubit

Nano devices for single photon source and qubit Nano devices for single photon source and qubit, Acknowledgement K. Gloos, P. Utko, P. Lindelof Niels Bohr Institute, Denmark J. Toppari, K. Hansen, S. Paraoanu, J. Pekola University of Jyvaskyla, Finland

More information

STM spectroscopy (STS)

STM spectroscopy (STS) STM spectroscopy (STS) di dv 4 e ( E ev, r) ( E ) M S F T F Basic concepts of STS. With the feedback circuit open the variation of the tunneling current due to the application of a small oscillating voltage

More information

Fig. 8.1 : Schematic for single electron tunneling arrangement. For large system this charge is usually washed out by the thermal noise

Fig. 8.1 : Schematic for single electron tunneling arrangement. For large system this charge is usually washed out by the thermal noise Part 2 : Nanostuctures Lecture 1 : Coulomb blockade and single electron tunneling Module 8 : Coulomb blockade and single electron tunneling Coulomb blockade and single electron tunneling A typical semiconductor

More information

Many-body correlations in a Cu-phthalocyanine STM single molecule junction

Many-body correlations in a Cu-phthalocyanine STM single molecule junction Many-body correlations in a Cu-phthalocyanine STM single molecule junction Andrea Donarini Institute of Theoretical Physics, University of Regensburg (Germany) Organic ligand Metal center Non-equilibrium

More information

Quantum physics in quantum dots

Quantum physics in quantum dots Quantum physics in quantum dots Klaus Ensslin Solid State Physics Zürich AFM nanolithography Multi-terminal tunneling Rings and dots Time-resolved charge detection Moore s Law Transistors per chip 10 9

More information

The Nanotube SQUID. uhu,, M. Monthioux,, V. Bouchiat, W. Wernsdorfer, CEMES-Toulouse, CRTBT & LLN Grenoble

The Nanotube SQUID. uhu,, M. Monthioux,, V. Bouchiat, W. Wernsdorfer, CEMES-Toulouse, CRTBT & LLN Grenoble The Nanotube SQUID J.-P. Cleuziou,, Th. Ondarçuhu uhu,, M. Monthioux,, V. Bouchiat, W. Wernsdorfer, CEMES-Toulouse, CRTBT & LLN Grenoble Outline Sample fabrication Proximity effect in CNT The CNT superconducting

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION High-density integration of carbon nanotubes by chemical self-assembly Hongsik Park, Ali Afzali, Shu-Jen Han, George S. Tulevski, Aaron D. Franklin, Jerry Tersoff, James B. Hannon and Wilfried Haensch

More information

Kondo effect in multi-level and multi-valley quantum dots. Mikio Eto Faculty of Science and Technology, Keio University, Japan

Kondo effect in multi-level and multi-valley quantum dots. Mikio Eto Faculty of Science and Technology, Keio University, Japan Kondo effect in multi-level and multi-valley quantum dots Mikio Eto Faculty of Science and Technology, Keio University, Japan Outline 1. Introduction: next three slides for quantum dots 2. Kondo effect

More information

Graphene Canada Montreal Oct. 16, 2015 (International Year of Light)

Graphene Canada Montreal Oct. 16, 2015 (International Year of Light) Luminescence Properties of Graphene A. Beltaos 1,2,3, A. Bergren 1, K. Bosnick 1, N. Pekas 1, A. Matković 4, A. Meldrum 2 1 National Institute for Nanotechnology (NINT), 11421 Saskatchewan Drive, Edmonton,

More information

Electric Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon. Nanotubes. Yung-Fu Chen and M. S. Fuhrer

Electric Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon. Nanotubes. Yung-Fu Chen and M. S. Fuhrer Electric Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon Nanotubes Yung-Fu Chen and M. S. Fuhrer Department of Physics and Center for Superconductivity Research, University of Maryland,

More information

a three-terminal configuration

a three-terminal configuration Electronic excitations of a single molecule contacted in a three-terminal configuration Edgar A. Osorio, Kevin O Neill, Maarten Wegewijs, Nicolai Stuhr-Hansen, 3 Jens Paaske, 3 Thomas Bjørnholm 3 and Herre

More information

EU: NANOMOL-CANEL. Bottom-up opportunities - the promise of molecular electronics. Thomas Bjørnholm, Nano-Science Center, University of Copenhagen

EU: NANOMOL-CANEL. Bottom-up opportunities - the promise of molecular electronics. Thomas Bjørnholm, Nano-Science Center, University of Copenhagen Bottom-up opportunities - the promise of molecular electronics Thomas Bjørnholm, Nano-cience Center, University of Copenhagen EU: NANOMOL-CANEL INGLE ELECTRON TRANITOR OF A INGLE CONJUGATED MOLECULE WITH

More information

A Single-Level Tunnel Model to Account for Electrical Transport through. Single Molecule- and Self-Assembled Monolayer-based Junctions

A Single-Level Tunnel Model to Account for Electrical Transport through. Single Molecule- and Self-Assembled Monolayer-based Junctions A Single-Level Tunnel Model to Account for Electrical Transport through Single Molecule- and Self-Assembled Monolayer-based Junctions Alvar R. Garrigues 1, Li Yuan 2, Lejia Wang 2, Eduardo R. Mucciolo

More information

Carbon based Nanoscale Electronics

Carbon based Nanoscale Electronics Carbon based Nanoscale Electronics 09 02 200802 2008 ME class Outline driving force for the carbon nanomaterial electronic properties of fullerene exploration of electronic carbon nanotube gold rush of

More information

Single Electron Transistor (SET)

Single Electron Transistor (SET) Single Electron Transistor (SET) SET: e - e - dot A single electron transistor is similar to a normal transistor (below), except 1) the channel is replaced by a small dot. C g 2) the dot is separated from

More information

Lecture 12. Electron Transport in Molecular Wires Possible Mechanisms

Lecture 12. Electron Transport in Molecular Wires Possible Mechanisms Lecture 12. Electron Transport in Molecular Wires Possible Mechanisms In Lecture 11, we have discussed energy diagrams of one-dimensional molecular wires. Here we will focus on electron transport mechanisms

More information

Determination of the tunnel rates through a few-electron quantum dot

Determination of the tunnel rates through a few-electron quantum dot Determination of the tunnel rates through a few-electron quantum dot R. Hanson 1,I.T.Vink 1, D.P. DiVincenzo 2, L.M.K. Vandersypen 1, J.M. Elzerman 1, L.H. Willems van Beveren 1 and L.P. Kouwenhoven 1

More information

Quantum Noise Measurement of a Carbon Nanotube Quantum dot in the Kondo Regime

Quantum Noise Measurement of a Carbon Nanotube Quantum dot in the Kondo Regime Quantum Noise Measurement of a Carbon Nanotube Quantum dot in the Kondo Regime J. Basset, 1 A.Yu. Kasumov, 1 C.P. Moca, G. Zarand,, 3 P. Simon, 1 H. Bouchiat, 1 and R. Deblock 1 1 Laboratoire de Physique

More information

Tunable Non-local Spin Control in a Coupled Quantum Dot System. N. J. Craig, J. M. Taylor, E. A. Lester, C. M. Marcus

Tunable Non-local Spin Control in a Coupled Quantum Dot System. N. J. Craig, J. M. Taylor, E. A. Lester, C. M. Marcus Tunable Non-local Spin Control in a Coupled Quantum Dot System N. J. Craig, J. M. Taylor, E. A. Lester, C. M. Marcus Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA M. P.

More information

Lecture 2: Double quantum dots

Lecture 2: Double quantum dots Lecture 2: Double quantum dots Basics Pauli blockade Spin initialization and readout in double dots Spin relaxation in double quantum dots Quick Review Quantum dot Single spin qubit 1 Qubit states: 450

More information

Carbon Nanotube Quantum Dot with Superconducting Leads. Kondo Effect and Andreev Reflection in CNT s

Carbon Nanotube Quantum Dot with Superconducting Leads. Kondo Effect and Andreev Reflection in CNT s Carbon Nanotube Quantum Dot with Superconducting Leads Kondo Effect and Andreev Reflection in CNT s Motivation Motivation S NT S Orsay group: reported enhanced I C R N product S A. Yu. Kasumov et al. N

More information

arxiv: v1 [cond-mat.mes-hall] 10 Sep 2010

arxiv: v1 [cond-mat.mes-hall] 10 Sep 2010 Electric Field Controlled Magnetic Anisotropy in a Single Molecule Alexander S. Zyazin, Johan W.G. van den Berg, Edgar A. Osorio, and Herre S.J. van der Zant arxiv:1009.2027v1 [cond-mat.mes-hall] 10 Sep

More information

Lecture 8, April 12, 2017

Lecture 8, April 12, 2017 Lecture 8, April 12, 2017 This week (part 2): Semiconductor quantum dots for QIP Introduction to QDs Single spins for qubits Initialization Read-Out Single qubit gates Book on basics: Thomas Ihn, Semiconductor

More information

Laurens W. Molenkamp. Physikalisches Institut, EP3 Universität Würzburg

Laurens W. Molenkamp. Physikalisches Institut, EP3 Universität Würzburg Laurens W. Molenkamp Physikalisches Institut, EP3 Universität Würzburg Onsager Coefficients I electric current density J particle current density J Q heat flux, heat current density µ chemical potential

More information

Title. I-V curve? e-e interactions? Conductance? Electrical Transport Through Single Molecules. Vibrations? Devices?

Title. I-V curve? e-e interactions? Conductance? Electrical Transport Through Single Molecules. Vibrations? Devices? Electrical Transport Through Single Molecules Harold U. Baranger, Duke University Title with Rui Liu, San-Huang Ke, and Weitao Yang Thanks to S. Getty, M. Fuhrer and L. Sita, U. Maryland Conductance? I-V

More information

Spectroscopy at nanometer scale

Spectroscopy at nanometer scale Spectroscopy at nanometer scale 1. Physics of the spectroscopies 2. Spectroscopies for the bulk materials 3. Experimental setups for the spectroscopies 4. Physics and Chemistry of nanomaterials Various

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION Dirac electron states formed at the heterointerface between a topological insulator and a conventional semiconductor 1. Surface morphology of InP substrate and the device Figure S1(a) shows a 10-μm-square

More information

Don Eigler IBM Fellow. Spin Excitation Spectroscopy : A Tool Set For Nano-Scale Spin Systems

Don Eigler IBM Fellow. Spin Excitation Spectroscopy : A Tool Set For Nano-Scale Spin Systems Don Eigler IBM Fellow Spin Excitation Spectroscopy : A Tool Set For Nano-Scale Spin Systems NSF Grantees Conference, Arlington, VA. December 6, 2010 A Challenge Build a Spin-Only Nano-Scale Digital Computer

More information

Computational Modeling of Molecular Electronics. Chao-Cheng Kaun

Computational Modeling of Molecular Electronics. Chao-Cheng Kaun Computational Modeling of Molecular Electronics Chao-Cheng Kaun Research Center for Applied Sciences, Academia Sinica Department of Physics, National Tsing Hua University May 9, 2007 Outline: 1. Introduction

More information

Developing Quantum Logic Gates: Spin-Resonance-Transistors

Developing Quantum Logic Gates: Spin-Resonance-Transistors Developing Quantum Logic Gates: Spin-Resonance-Transistors H. W. Jiang (UCLA) SRT: a Field Effect Transistor in which the channel resistance monitors electron spin resonance, and the resonance frequency

More information

Supplementary Figure 1 Change of the Tunnelling Transmission Coefficient from the Bulk to the Surface as a result of dopant ionization Colour-map of

Supplementary Figure 1 Change of the Tunnelling Transmission Coefficient from the Bulk to the Surface as a result of dopant ionization Colour-map of Supplementary Figure 1 Change of the Tunnelling Transmission Coefficient from the Bulk to the Surface as a result of dopant ionization Colour-map of change of the tunnelling transmission coefficient through

More information

Formation of unintentional dots in small Si nanostructures

Formation of unintentional dots in small Si nanostructures Superlattices and Microstructures, Vol. 28, No. 5/6, 2000 doi:10.1006/spmi.2000.0942 Available online at http://www.idealibrary.com on Formation of unintentional dots in small Si nanostructures L. P. ROKHINSON,

More information

Electron transport : From nanoparticle arrays to single nanoparticles. Hervé Aubin

Electron transport : From nanoparticle arrays to single nanoparticles. Hervé Aubin Electron transport : From nanoparticle arrays to single nanoparticles Hervé Aubin Qian Yu (PhD) Hongyue Wang (PhD) Helena Moreira (PhD) Limin Cui (Visitor) Irena Resa(Post-doc) Brice Nadal (Post-doc) Alexandre

More information

Chapter 3 Properties of Nanostructures

Chapter 3 Properties of Nanostructures Chapter 3 Properties of Nanostructures In Chapter 2, the reduction of the extent of a solid in one or more dimensions was shown to lead to a dramatic alteration of the overall behavior of the solids. Generally,

More information

Carbon Nanomaterials

Carbon Nanomaterials Carbon Nanomaterials STM Image 7 nm AFM Image Fullerenes C 60 was established by mass spectrographic analysis by Kroto and Smalley in 1985 C 60 is called a buckminsterfullerene or buckyball due to resemblance

More information

Supplementary Information for Pseudospin Resolved Transport Spectroscopy of the Kondo Effect in a Double Quantum Dot. D2 V exc I

Supplementary Information for Pseudospin Resolved Transport Spectroscopy of the Kondo Effect in a Double Quantum Dot. D2 V exc I Supplementary Information for Pseudospin Resolved Transport Spectroscopy of the Kondo Effect in a Double Quantum Dot S. Amasha, 1 A. J. Keller, 1 I. G. Rau, 2, A. Carmi, 3 J. A. Katine, 4 H. Shtrikman,

More information

are microscopically large but macroscopically small contacts which may be connected to a battery to provide the bias voltage across the junction.

are microscopically large but macroscopically small contacts which may be connected to a battery to provide the bias voltage across the junction. At present, we observe a long-lasting process of miniaturization of electronic devices. The ultimate limit for the miniaturization of electronic components is set by the atomic scale. However, in the case

More information

Counting Individual Electrons on Liquid Helium

Counting Individual Electrons on Liquid Helium Counting Individual Electrons on Liquid Helium G. Papageorgiou 1, P. Glasson 1, K. Harrabi 1, V.Antonov 1, E.Collin 2, P.Fozooni 1, P.G.Frayne 1, M.J.Lea 1, Y.Mukharsky 2 and D.G.Rees 1. 1 Department of

More information

Supporting Information for

Supporting Information for Supporting Information for Single Electron Transistor with Single Aromatic Ring Molecule Covalently Connected to Graphene Nanogaps Qizhi Xu 1, Giovanni Scuri 2, Carly Mathewson 1, Philip Kim*,3, Colin

More information

Classification of Solids

Classification of Solids Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples

More information

Apparent reversal of molecular orbitals reveals entanglement

Apparent reversal of molecular orbitals reveals entanglement Apparent reversal of molecular orbitals reveals entanglement Andrea Donarini P.Yu, N. Kocic, B.Siegert, J.Repp University of Regensburg and Shanghai Tech University Entangled ground state Spectroscopy

More information

Signatures of Molecular Magnetism in Single-Molecule Transport Spectroscopy

Signatures of Molecular Magnetism in Single-Molecule Transport Spectroscopy Signatures of Molecular Magnetism in Single-Molecule Transport Spectroscopy NANO LETTERS 2006 Vol. 6, No. 9 2014-2020 Moon-Ho Jo,,,# Jacob E. Grose,,# Kanhayalal Baheti, Mandar M. Deshmukh, Jennifer J.

More information

arxiv: v2 [cond-mat.mes-hall] 11 Nov 2015

arxiv: v2 [cond-mat.mes-hall] 11 Nov 2015 Probing Transverse Magnetic Anisotropy by Electronic Transport through a Single-Molecule Magnet arxiv:147.5265v2 [cond-mat.mes-hall] 11 ov 215 M. Misiorny, 1, 2, E. Burzurí, 3, R. Gaudenzi, 3 K. Park,

More information

Electrical and Optical Properties. H.Hofmann

Electrical and Optical Properties. H.Hofmann Introduction to Nanomaterials Electrical and Optical Properties H.Hofmann Electrical Properties Ohm: G= σw/l where is the length of the conductor, measured in meters [m], A is the cross-section area of

More information

FABRICATION AND CHARACTERIZATION OF SINGLE ELECTRON DEVICE AND STUDY OF ENERGY FILTERING IN SINGLE ELECTRON TRANSPORT LIANG-CHIEH MA

FABRICATION AND CHARACTERIZATION OF SINGLE ELECTRON DEVICE AND STUDY OF ENERGY FILTERING IN SINGLE ELECTRON TRANSPORT LIANG-CHIEH MA FABRICATION AND CHARACTERIZATION OF SINGLE ELECTRON DEVICE AND STUDY OF ENERGY FILTERING IN SINGLE ELECTRON TRANSPORT by LIANG-CHIEH MA Presented to the Faculty of the Graduate School of The University

More information

Electrical Contacts to Carbon Nanotubes Down to 1nm in Diameter

Electrical Contacts to Carbon Nanotubes Down to 1nm in Diameter 1 Electrical Contacts to Carbon Nanotubes Down to 1nm in Diameter Woong Kim, Ali Javey, Ryan Tu, Jien Cao, Qian Wang, and Hongjie Dai* Department of Chemistry and Laboratory for Advanced Materials, Stanford

More information

Formation mechanism and Coulomb blockade effect in self-assembled gold quantum dots

Formation mechanism and Coulomb blockade effect in self-assembled gold quantum dots Formation mechanism and Coulomb blockade effect in self-assembled gold quantum dots S. F. Hu a) National Nano Device Laboratories, Hsinchu 300, Taiwan R. L. Yeh and R. S. Liu Department of Chemistry, National

More information

Spectroscopies for Unoccupied States = Electrons

Spectroscopies for Unoccupied States = Electrons Spectroscopies for Unoccupied States = Electrons Photoemission 1 Hole Inverse Photoemission 1 Electron Tunneling Spectroscopy 1 Electron/Hole Emission 1 Hole Absorption Will be discussed with core levels

More information

Cotunneling and nonequilibrium magnetization in magnetic molecular monolayers

Cotunneling and nonequilibrium magnetization in magnetic molecular monolayers Cotunneling and nonequilibrium magnetization in magnetic molecular monolayers Florian Elste 1, * and Carsten Timm 2, 1 Institut für Theoretische Physik, Freie Universität Berlin, Arnimallee 14, 14195 Berlin,

More information

Supplementary information for Tunneling Spectroscopy of Graphene-Boron Nitride Heterostructures

Supplementary information for Tunneling Spectroscopy of Graphene-Boron Nitride Heterostructures Supplementary information for Tunneling Spectroscopy of Graphene-Boron Nitride Heterostructures F. Amet, 1 J. R. Williams, 2 A. G. F. Garcia, 2 M. Yankowitz, 2 K.Watanabe, 3 T.Taniguchi, 3 and D. Goldhaber-Gordon

More information

Molecular electronics and single electron transistors. Molecular electronics: definition

Molecular electronics and single electron transistors. Molecular electronics: definition Molecular electronics and single electron transistors Single electron devices that function at room temperature require: Island sizes ~ 1 nm to have capacitances sufficiently small that k B T ~ 0.01 e

More information

Spatially resolving density-dependent screening around a single charged atom in graphene

Spatially resolving density-dependent screening around a single charged atom in graphene Supplementary Information for Spatially resolving density-dependent screening around a single charged atom in graphene Dillon Wong, Fabiano Corsetti, Yang Wang, Victor W. Brar, Hsin-Zon Tsai, Qiong Wu,

More information

Few-electron molecular states and their transitions in a single InAs quantum dot molecule

Few-electron molecular states and their transitions in a single InAs quantum dot molecule Few-electron molecular states and their transitions in a single InAs quantum dot molecule T. Ota 1*, M. Rontani 2, S. Tarucha 1,3, Y. Nakata 4, H. Z. Song 4, T. Miyazawa 4, T. Usuki 4, M. Takatsu 4, and

More information

Transport through Magnetic Molecules with Spin-Vibron Interaction

Transport through Magnetic Molecules with Spin-Vibron Interaction Transport through Magnetic Molecules with Spin-Vibron Interaction Thesis for the degree of Erasmus Mundus Master of Science in Nanoscience and Nanotechnology AHMED KENAWY Promoter: Prof. Janine Splettstößer

More information

Many-body correlations in STM single molecule junctions

Many-body correlations in STM single molecule junctions Many-body correlations in STM single molecule junctions Andrea Donarini Institute of Theoretical Physics, University of Regensburg, Germany TMSpin Donostia Many-body correlations in STM single molecule

More information

Supplementary Figure 1 Experimental setup for crystal growth. Schematic drawing of the experimental setup for C 8 -BTBT crystal growth.

Supplementary Figure 1 Experimental setup for crystal growth. Schematic drawing of the experimental setup for C 8 -BTBT crystal growth. Supplementary Figure 1 Experimental setup for crystal growth. Schematic drawing of the experimental setup for C 8 -BTBT crystal growth. Supplementary Figure 2 AFM study of the C 8 -BTBT crystal growth

More information

CHARACTERIZATION AND MANIPULATION OF NANOSTRUCTURES BY A SCANNING TUNNELING MICROSCOPE

CHARACTERIZATION AND MANIPULATION OF NANOSTRUCTURES BY A SCANNING TUNNELING MICROSCOPE Mater.Phys.Mech. Characterization and 4 (2001) manipulation 29-33 of nanostructures by a scanning tunneling microscope 29 CHARACTERIZATION AND MANIPULATION OF NANOSTRUCTURES BY A SCANNING TUNNELING MICROSCOPE

More information