BFS469L6. World's smallest SMD 6-pin leadless package Built in 2 transitors (TR1: die as BFR460L3, TR2: die as BFR949L3)

Size: px
Start display at page:

Download "BFS469L6. World's smallest SMD 6-pin leadless package Built in 2 transitors (TR1: die as BFR460L3, TR2: die as BFR949L3)"

Transcription

1 NPN Silicon RF TWIN Transistor Preliminary data Low voltage/ low current applications Ideal for VCO modules and low noise amplifiers Low noise figure: :.db at.8 GHz :. db at.8 GHz World's smallest SMD 6pin leadless package Built in 2 transitors (: die as BFR460L3, : die as BFR949L3) $ 6 4 # 6 4 "! ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFS469L6 AD =C 2=E 3=C2 4=B2 =E2 6=B TSLP6 Maximum Ratings Collectoremitter voltage Collectoremitter voltage Collectorbase voltage Emitterbase voltage Collector current V CEO V CES V CBO V EBO I C V ma 0 70 Sep003

2 Maximum Ratings Base current Total power dissipation ), T S 04 C, T S 00 C Junction temperature Ambient temperature Storage temperature Thermal Resistance I B P tot T j T A T stg ma 7 mw 0 20 C Junction soldering point 2) R thjs TS is measured on the collector lead at the soldering point to the pcb 2 For calculation of RthJA please refer to Application Note Thermal Resistance K/W Sep003

3 Electrical Characteristics at T A = 2 C, unless otherwise specified DC Characteristics Collectoremitter breakdown voltage V (BR)CEO V, I C = ma, I B = 0, I C = ma, I B = Collectoremitter cutoff current I CES µa, V CE = V, V BE = 0, V CE = V, V BE = Collectorbase cutoff current I CBO na, V CB = V, I E = 0, V CB = 0 V, I E = Emitterbase cutoff current I EBO µa, V EB = 0, V, I C = 0, V EB = V, I C = 0 0. DC current gain h FE, I C = ma, V CE = 3 V 30, I C = ma, V CE = 3 V Electrical Characteristics at T A = 2 C, unless otherwise specified AC Characteristics (verified by random sampling) Transition frequency f T GHz, I C = 30 ma, V CE = 3 V, f = GHz, I C = ma, V CE = 6 V, f = GHz 6 tbd 22 9 Collectorbase capacitance, V CB = 3 V, f = MHz, emitter grounded, V CB = 0 V, f = MHz, emitter grounded C cb pf Collector emitter capacitance C ce, V CE = 3 V, f = MHz, base grounded 0.7, V CE = 0 V, f = MHz, base grounded 0.7 Emitterbase capacitance C eb, V EB = 0, V, f = MHz, collector grounded 0.7, V EB = 0, V, f = MHz, collector grounded Sep003

4 Electrical Characteristics at TA = 2 C, unless otherwise specified AC Characteristics (verified by random sampling) Noise figure F db, I C =ma, V CE = 3 V, f =.8 GHz, Z S = Z Sopt, I C =ma, V CE = 3 V, f = 3 GHz, Z S = Z Sopt, I C =3mA, V CE = 6 V, f = GHz, Z S = Z Sopt, I C =3mA, V CE = 8 V, f =.8 GHz, Z S = Z Sopt..4.3 Power gain, maximum stable ) G ms, I C = ma, V CE = 3 V, Z S =Z Sopt, Z L =Z Lopt, f =.8 GHz 4., I C = 0 ma, V CE = 8 V, Z S =Z Sopt, Z L =Z Lopt, f = 0.9 GHz, I C = 0 ma, V CE = 8 V, Z S =Z Sopt, Z L =Z Lopt, f =.8 GHz 4 Power gain, maximum available ) G ma 0, I C = ma, V CE = 3 V, Z S = Z Sopt, Z L = Z Lopt, f =,8 GHz Transducer gain S 2e 2, I C =ma, V CE = 3 V, Z S =Z L =0Ω, f=.8ghz, I C =ma, V CE = 3 V, Z S =Z L =0Ω, f=3ghz, I C =ma, V CE = 6 V, Z S =Z L =0Ω, f=ghz, I C =0mA, V CE = 8 V, Z S =Z L =0Ω, f=.8ghz 2. 9, Third order intercept point at output 2) IP 3, V CE =3V, I C =ma, Z S =Z L =0Ω, f=.8ghz, V CE =8V, I C =0mA, Z S =Z L =0Ω, f=.8ghz db Compression point at output, I C =ma, V CE =3V, Z S =Z L =0Ω, f=.8ghz, I C =0mA, V CE =8V, Z S =Z L =0Ω, f=.8ghz P db 2 6 dbm Gma = S 2e / S 2e (k(k²) /2 ), G ms = S 2e / S 2e 2 IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 0Ω from 0. MHz to 6 GHz 4 Sep003

5 Published by Infineon Technologies AG, St.MartinStrasse 3, 8669 München Infineon Technologies AG 04. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323 Low Noise Silicon Bipolar RF Transistor For low distortion amplifiers and oscillators up to GHz at collector currents from 5 ma to 30 ma 3 Pbfree (RoHS compliant) and halogenfree package with visible leads

More information

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

ESD (Electrostatic discharge) sensitive device, observe handling precaution! NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 9 GHz, F = db at GHz Pbfree (RoHS compliant) package ) Qualified according AEC Q0 * Short

More information

Type Marking Pin Configuration Package BFQ19S FG 1 = B 2 = C 3 = E SOT89

Type Marking Pin Configuration Package BFQ19S FG 1 = B 2 = C 3 = E SOT89 Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to.5 GHz at collector currents from 0 ma to 70 ma Pbfree (RoHS compliant)

More information

Type Marking Pin Configuration Package BFR183 RHs 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package BFR183 RHs 1=B 2=E 3=C SOT23 Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 30 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz Pbfree (RoHS compliant) package Qualification

More information

Type Marking Pin Configuration Package BFR182W RGs 1=B 2=E 3=C SOT323

Type Marking Pin Configuration Package BFR182W RGs 1=B 2=E 3=C SOT323 Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz 3 Pbfree (RoHS compliant) and halogenfree

More information

BFS483. Low Noise Silicon Bipolar RF Transistor

BFS483. Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 30 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz Two (galvanic) internal isolated Transistor

More information

Type Marking Pin Configuration Package BFR93A R2s 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package BFR93A R2s 1=B 2=E 3=C SOT23 NPN Silicon RF Transistor For lownoise, high gain broadband amplifiers at collector currents from ma to 0 ma Pbfree (RoHS compliant) package ESD (Electrostatic discharge) sensitive device, observe handling

More information

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

ESD (Electrostatic discharge) sensitive device, observe handling precaution! NPN Silicon RF Transistor* For lowdistortion broadband output amplifier stages in antenna and telecommunication systems up to GHz at collector currents from 70 ma to 30 ma Power amplifiers for DECT and

More information

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

ESD (Electrostatic discharge) sensitive device, observe handling precaution! NPN Silicon RF Transistor For broadband amplifiers up to GHz at collector currents from ma to ma Pbfree (RoHS compliant) package ) Qualified according AEC Q ESD (Electrostatic discharge) sensitive device,

More information

Type Marking Pin Configuration Package BCX42 BSS63 1 = B 1 = B 2 = E 2 = E

Type Marking Pin Configuration Package BCX42 BSS63 1 = B 1 = B 2 = E 2 = E , PNP Silicon AF an Swiching Transistors For general AF applications High breakdown voltage Low collectoremitter saturation voltage Complementary types: BCX4, BSS64 (NPN) VPS6 Type Marking Pin Configuration

More information

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323 NPN Silicon RF Transistor For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 ma to 30 ma 3 1 2 Pbfree (RoHS compliant) package Qualified according AEC Q1 ESD (Electrostatic

More information

BFP193. NPN Silicon RF Transistor*

BFP193. NPN Silicon RF Transistor* NPN Silicon RF Transistor* For low noise, highgain amplifiers up to GHz For linear broadband amplifiers f T = 8 GHz, F = db at 900 MHz * Short term description ESD (Electrostatic discharge) sensitive device,

More information

BFP196W. NPN Silicon RF Transistor*

BFP196W. NPN Silicon RF Transistor* NPN Silicon RF Transistor* For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 ma to 80 ma Power amplifier for DECT

More information

Type Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23 NPN Silicon RF Transistor* For broadband amplifiers up to GHz and fast nonsaturated switches at collector currents from 0.5 ma to 0 ma Complementary type: BFT9 (PNP) * Short term description ESD (Electrostatic

More information

C1 (2) C2 (1) E1 (3) E2 (4) Type Marking Pin Configuration Package BCV61B BCV61C 2 = C1 2 = C1 1 = C2 1 = C2

C1 (2) C2 (1) E1 (3) E2 (4) Type Marking Pin Configuration Package BCV61B BCV61C 2 = C1 2 = C1 1 = C2 1 = C2 NPN Silicon Double Transistor To be used as a current mirror Good thermal coupling and V BE matching High current gain Low collectoremitter saturation voltage C1 (2) C2 (1) 2 Tr.1 Tr.2 1 VPS05178 E1 ()

More information

BFP193. NPN Silicon RF Transistor* For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers f T = 8 GHz, F = 1 db at 900 MHz

BFP193. NPN Silicon RF Transistor* For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers f T = 8 GHz, F = 1 db at 900 MHz NPN Silicon RF Transistor* For low noise, highgain amplifiers up to GHz For linear broadband amplifiers f T = 8 GHz, F = db at 900 MHz Pbfree (RoHS compliant) package ) Qualified according AEC Q * Short

More information

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR183W RHs 1=B 2=E 3=C SOT323

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR183W RHs 1=B 2=E 3=C SOT323 NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 8 GHz, F = 0.9 db at 900 MHz Pbfree (RoHS compliant) package ) Qualified according AEC

More information

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR181 RFs 1=B 2=E 3=C SOT23

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR181 RFs 1=B 2=E 3=C SOT23 NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from 0.5 ma to ma f T = 8 GHz, F = 0.9 db at 900 MHz Pbfree (RoHS compliant) package ) Qualified according

More information

Type Marking Pin Configuration Package BCX42 DKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO

Type Marking Pin Configuration Package BCX42 DKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO PNP Silicon AF and Switching Transistor For general AF applications High breakdown voltage Low collectoremitter saturation voltage Complementary type: BCX4 (NPN) Pbfree (RoHS compliant) package Qualified

More information

Type Marking Pin Configuration Package BFN38 BFN38 1=B 2=C 3=E 4=C - - SOT223

Type Marking Pin Configuration Package BFN38 BFN38 1=B 2=C 3=E 4=C - - SOT223 NPN Silicon HighVoltage Transistors Suitable for video output stages TV sets and switching power supplies High breakdown voltage 2 Low collectoremitter saturation voltage Complementary type: BFN9 (PNP)

More information

Type Marking Pin Configuration Package BFN24 BFN26 1=B 1=B

Type Marking Pin Configuration Package BFN24 BFN26 1=B 1=B BFN4, BFN6 NPN Silicon HighVoltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collectoremitter saturation voltage Complementary type:

More information

BFP196W. NPN Silicon RF Transistor*

BFP196W. NPN Silicon RF Transistor* NPN Silicon RF Transistor* For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 ma to 80 ma Power amplifier for DECT

More information

BDP947_BDP949_BDP953. Silicon NPN Transistors. For AF driver and output stages High collector current High current gain

BDP947_BDP949_BDP953. Silicon NPN Transistors. For AF driver and output stages High collector current High current gain BDP97_BDP99_BDP95 Silicon NPN Transistors For AF driver and output stages High collector current High current gain Low collectoremitter saturation voltage Complementary types: BDP98, BDP95, BDP95 (PNP)

More information

Type Marking Pin Configuration Package BSP60 BSP61 BSP62 2=C 2=C 2=C 3=E 3=E 3=E

Type Marking Pin Configuration Package BSP60 BSP61 BSP62 2=C 2=C 2=C 3=E 3=E 3=E BSP6 PNP Silicon Darlington Transistor High collector current Low collectoremitter saturation voltage Complementary types: BSP0...BSP (NPN) 1 Pbfree (RoHS compliant) package 1) Qualified according AEC

More information

Type Marking Pin Configuration Package BC BC807-16W BC BC807-25W BC BC807-40W BC BC808-25W BC808-40

Type Marking Pin Configuration Package BC BC807-16W BC BC807-25W BC BC807-40W BC BC808-25W BC808-40 PNP Silicon AF Transistor For general AF applications High collector current High current gain Low collectoremitter saturation voltage Complementary type: BC87.../W, BC88.../W (NPN) Pbfree (RoHS compliant)

More information

C1 B2 E2 TR2 TR1 EHA Type Marking Pin Configuration Package BC817UPN 1Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74

C1 B2 E2 TR2 TR1 EHA Type Marking Pin Configuration Package BC817UPN 1Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 BC87UPN NPN Silicon AF Transistor Array For AF stages and driver applications High current gain Low collectoremitter saturation voltage 4 6 Two (galvanic) internal isolated NPN/PNP transistors in one package

More information

Type Marking Pin Configuration Package BCX68-10 BCX68-16 BCX =B 1=B 1=B

Type Marking Pin Configuration Package BCX68-10 BCX68-16 BCX =B 1=B 1=B NPN Silicon AF Transistors For general AF applications High collector current High current gain Low collectoremitter saturation voltage Complementary type: BCX69 (PNP) Pbfree (RoHS compliant) package )

More information

Type Marking Pin Configuration Package BCM846S 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

Type Marking Pin Configuration Package BCM846S 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 NPN Silicon AF Transistor Array Precision matched transistor pair: I C % For current mirror applications Low collectoremitter saturation voltage Two (galvanic) internal isolated Transistors Complementary

More information

Type Marking Pin Configuration Package BCP68-25 * 1=B 2=C 3=E 4=C - - SOT223

Type Marking Pin Configuration Package BCP68-25 * 1=B 2=C 3=E 4=C - - SOT223 BCP68 NPN Silicon AF Transistor For general AF applications High collector current High current gain 4 Low collectoremitter saturation voltage Complementary type: BCP69 (PNP) Pbfree (RoHS compliant) package

More information

BCP51...-BCP53... Type Marking Pin Configuration Package BCP51 BCP51-16 BCP52-16 BCP53-10 BCP SOT223 SOT223 SOT223 SOT223 SOT223

BCP51...-BCP53... Type Marking Pin Configuration Package BCP51 BCP51-16 BCP52-16 BCP53-10 BCP SOT223 SOT223 SOT223 SOT223 SOT223 BCP...BCP... PNP Silicon AF Transistors For AF driver and output stages High collector current Low collectoremitter saturation voltage Complementary types: BCP4... BCP6 (NPN) Pbfree (RoHS compliant) package

More information

BCW61..., BCX71... PNP Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage

BCW61..., BCX71... PNP Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage PNP Silicon AF Transistors For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz Complementary types: BCW6, BCX7 (NPN) Pbfree

More information

BCW60, BCX70. NPN Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage

BCW60, BCX70. NPN Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage BCW6, BCX7 NPN Silicon A Transistors or A input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz Complementary types: BCW6, BCX7 (PNP)

More information

Type Marking Pin Configuration Package BFN27 FLs 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package BFN27 FLs 1=B 2=E 3=C SOT23 PNP Silicon HighVoltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage 2 Low collectoremitter saturation voltage omplementary types: BFN26 (NPN)

More information

Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) Type Marking Pin Configuration Package BCV62A BCV62B BCV62C 2 = C1 2 = C1 2 = C1

Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) Type Marking Pin Configuration Package BCV62A BCV62B BCV62C 2 = C1 2 = C1 2 = C1 PNP Silicon Double Transistor To be used as a current mirror Good thermal coupling and V BE matching High current gain Low collector-emitter saturation voltage 1 2 Pb-free (RoHS compliant) package Qualified

More information

Type Marking Pin Configuration Package SMBTA06/MMBTA06 s1g 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package SMBTA06/MMBTA06 s1g 1=B 2=E 3=C SOT23 SMBTA6/MMBTA6 NPN Silicon AF Transistor Low collectoremitter saturation voltage omplementary type: SMBTA 6 / MMBTA6 (PNP) Pbfree (RoHS compliant) package Qualified according AE Q Type Marking Pin onfiguration

More information

Type Marking Pin Configuration Package BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* 1=B 1=B 1=B 1=B 1=B 1=B

Type Marking Pin Configuration Package BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* 1=B 1=B 1=B 1=B 1=B 1=B NPN Silicon AF Transistors For general AF applications High current gain Low collectoremitter saturation voltage omplementary type: BW68 (PNP) Pbfree (RoHS compliant) package ) Qualified according AE Q

More information

Type Marking Pin Configuration Package SMBT2222A/MMBT2222A s1p 1 = B 2 = E 3 = C SOT23

Type Marking Pin Configuration Package SMBT2222A/MMBT2222A s1p 1 = B 2 = E 3 = C SOT23 SMBTA/MMBTA NPN Silicon Switching Transistor Low collectoremitter saturation voltage omplementary type: SMBT97A / MMBT97A (PNP) 1 Pbfree (RoHS compliant) package Qualified according AE Q1 Type Marking

More information

Type Marking Pin Configuration Package BCW66KF BCW66KG BCW66KH 1=B 1=B 1=B

Type Marking Pin Configuration Package BCW66KF BCW66KG BCW66KH 1=B 1=B 1=B NPN Silicon AF Transistors For general AF applications High current gain Low collectoremitter saturation voltage omplementary type: BW68 (PNP) Pbfree (RoHS compliant) package Qualified according AE Q Type

More information

Type Marking Pin Configuration Package SMBT2907A/MMBT2907A s2f 1 = B 2 = E 3 = C SOT23

Type Marking Pin Configuration Package SMBT2907A/MMBT2907A s2f 1 = B 2 = E 3 = C SOT23 PNP Silicon Switching Transistor Low collectoremitter saturation voltage omplementary type: SMBTA / MMBTA (NPN) 1 Pbfree (RoHS compliant) package 1) Qualified according AE Q1 Type Marking Pin onfiguration

More information

Type Marking Pin Configuration Package BCM856S 3Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

Type Marking Pin Configuration Package BCM856S 3Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BM86S PNP Silicon AF Transistor Array Precision matched transistor pair: I % For current mirror applications Low collectoremitter saturation voltage Two (galvanic) internal isolated Transistors omplementary

More information

BC BC Pb-containing package may be available upon special request

BC BC Pb-containing package may be available upon special request BC846...BC8... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz Complementary types: BC86...BC86...(PNP)

More information

SMBT MMBT3906 SMBT3906S/U. Type Marking Pin Configuration Package SMBT3906S SMBT3906U

SMBT MMBT3906 SMBT3906S/U. Type Marking Pin Configuration Package SMBT3906S SMBT3906U PNP Silicon Switching Transistors High D current gain:. ma to ma Low collectoremitter saturation voltage For SMBT96S and SMBT96U: Two (galvanic) internal isolated transistor with good matching in one package

More information

BFR93A. NPN Silicon RF Transistor. For low-noise, high-gain broadband amplifiers at collector currents from 2 ma to 30 ma

BFR93A. NPN Silicon RF Transistor. For low-noise, high-gain broadband amplifiers at collector currents from 2 ma to 30 ma NPN Silicon RF Transistor For lownoise, highgain broadband amplifiers at collector currents from ma to ma VPS5 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin

More information

2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E

2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E B847...B8... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz omplementary types: B87...B86...(PNP)

More information

BC BC Pb-containing package may be available upon special request

BC BC Pb-containing package may be available upon special request B86...B86... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between hz and khz omplementary types: B846...B8...

More information

single, leadless single Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R

single, leadless single Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R Silicon PIN Diode Optimized for low current antenna switches in hand held applications Very low forward resistance (typ..5 Ω @ I F = ma) Low capacitance at zero volt reverse bias at frequencies above GHz

More information

BAR64... BAR64-05 BAR64-05W BAR64-04 BAR64-04W BAR64-02LRH BAR64-02V BAR64-03W BAR64-06 BAR64-06W BAR64-07

BAR64... BAR64-05 BAR64-05W BAR64-04 BAR64-04W BAR64-02LRH BAR64-02V BAR64-03W BAR64-06 BAR64-06W BAR64-07 Silicon PIN Diode High voltage current controlled RF resistor for RF attenuator and switches Frequency range above MHz up to 6 GHz Very low capacitance at zero volt reverse bias at frequencies above GHz

More information

BAV BAV Total power dissipation T S 35 C. t = 1 s. t = 1 µs. P tot 250 mw

BAV BAV Total power dissipation T S 35 C. t = 1 s. t = 1 µs. P tot 250 mw Silicon Low Leakage Diode Array Lowleakage applications Medium speed switching times Pbfree (RoHS compliant) package 1) Qualified according AEC Q11 BAV17!,, Type Package Configuration Marking BAV17 SOT23

More information

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF998 BF998R 2=D 2=S 3=G2 3=G1

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF998 BF998R 2=D 2=S 3=G2 3=G1 BF99... Silicon N_Channel MOSFET Tetrode Shortchannel transistor with high S / C quality factor For lownoise, gaincontrolled input stage up to GHz Pbfree (RoHS compliant) package ) Qualified according

More information

single, leadless single single

single, leadless single single Silicon PIN Diode Series diode for mobile communication in low loss transmitreceiver switches Band switch for TVtuners Very low forward resistance (typ..65 Ω @ 5 ma) Low capacitance (typ..5 pf @ V) Fast

More information

BAW56 BAW56S BAW56T BAW56U BAW56W

BAW56 BAW56S BAW56T BAW56U BAW56W Silicon Switching Diode For highspeed switching applications Common anode configuration BAW56S / U: For orientation in reel see package information below BAW56 BAW56T BAW56W BAW56S BAW56U! $ # ",!, ",,,,!

More information

Type Package Configuration Marking BAS28 BAS28W

Type Package Configuration Marking BAS28 BAS28W Silicon Switching Diode For highspeed switching applications Electrical insulated diodes Pbfree (RoHS compliant) package ) Qualified according EC Q /W "!,, Type Package Configuration Marking W SOT SOT

More information

Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm 3 R thja 450 K/W plated with 35m Cu

Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm 3 R thja 450 K/W plated with 35m Cu Silicon NPN Planar RF Transistor BFR92 Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features High

More information

I FSM P tot 500 mw. 150 C Storage temperature T stg

I FSM P tot 500 mw. 150 C Storage temperature T stg Silicon Schottky Diode Medium current rectifier Schottky diode Low forward voltage at m High reverse voltage Pbfree (RoHS compliant) package ) Qualified according EC Q BS5V ESD (Electrostatic discharge)

More information

Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35m Cu

Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35m Cu Silicon NPN Planar RF Transistor BFR96TS Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features

More information

RF amplifier up to GHz range specially for wide band antenna amplifier.

RF amplifier up to GHz range specially for wide band antenna amplifier. Silicon NPN Planar RF Transistor BFR91 Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features High

More information

RF amplifier up to GHz range specially for wide band antenna amplifier.

RF amplifier up to GHz range specially for wide band antenna amplifier. Silicon NPN Planar RF Transistor BFR91A Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features High

More information

BCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C

BCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω ) For 6PIN packages: two (galvanic) internal isolated transistors with

More information

thinq! SiC Schottky Diode

thinq! SiC Schottky Diode SDT12S6 Silicon Carbide Schottky Diode Worlds first 6V Schottky diode Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the

More information

BFS17/BFS17R/BFS17W. Silicon NPN Planar RF Transistor. Vishay Telefunken. Applications. Features

BFS17/BFS17R/BFS17W. Silicon NPN Planar RF Transistor. Vishay Telefunken. Applications. Features Silicon NPN Planar RF Transistor BFS17/BFS17R/BFS17W Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features High power gain SMD-package

More information

PG-TO I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62

PG-TO I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62 Fast IGBT in NPTtechnology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: Motor controls Inverter NPTTechnology for

More information

IGW25T120. TrenchStop Series

IGW25T120. TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology Short circuit withstand time 10µs Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications

More information

Parameter Test condition Symbol Value Unit Junction ambient 1) R thja 300 K/W

Parameter Test condition Symbol Value Unit Junction ambient 1) R thja 300 K/W Silicon NPN Planar RF Transistor Features High power gain Low noise figure Lead (Pb)-free component Component in accordance to RoHS 00/95/EC and WEEE 00/96/EC e E B C Applications RF amplifier up to GHz

More information

BAT64-04W. ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking

BAT64-04W. ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward voltage Pb-free (RoHS compliant) package ) Qualified

More information

IDP30E120. Fast Switching Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C

IDP30E120. Fast Switching Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C Fast Switching Diode Features 1200 V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Product Summary V RRM 1200 V I F 30 V F 1.65 V T jmax 150 C PGTO2202 Easy

More information

TrenchStop Series. P t o t 270 W

TrenchStop Series. P t o t 270 W Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10 s Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications

More information

SGP20N60 SGW20N60. Fast IGBT in NPT-technology

SGP20N60 SGW20N60. Fast IGBT in NPT-technology Fast IGBT in NPTtechnology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: Motor controls Inverter NPTTechnology for

More information

IDD06E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 6 A V F 1.5 V T jmax 175 C

IDD06E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 6 A V F 1.5 V T jmax 175 C Fast Switching EmCon Diode Feature 6 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM 6

More information

TrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

TrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode C G E Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive

More information

Soft Switching Series

Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for T Jmax = 175 C Trench and Fieldstop

More information

Type Marking Pin Configuration Package BGA427 BMs 1, IN 2, GND 3, +V 4, Out SOT343. Maximum Ratings Parameter Symbol Value Unit Device current I D

Type Marking Pin Configuration Package BGA427 BMs 1, IN 2, GND 3, +V 4, Out SOT343. Maximum Ratings Parameter Symbol Value Unit Device current I D BGA7 SiMMICAmplifier in SIEGET Technologie Cascadable 0 Ωgain block Unconditionally stable Gain S = 8. db at.8 GHz (Appl.) gain S = db at.8 GHz (Appl.) IP out = +7 dbm at.8 GHz (V D =V, I D =9.mA) Noise

More information

60 30 Pulsed collector current, t p limited by T jmax I Cpuls 90 Turn off safe operating area V CE 900V, T j 175 C - 90 Diode forward current

60 30 Pulsed collector current, t p limited by T jmax I Cpuls 90 Turn off safe operating area V CE 900V, T j 175 C - 90 Diode forward current Reverse Conducting IGBT with monolithic body diode Features: 1.5V typical saturation voltage of IGBT Trench and Fieldstop technology for 900 V applications offers : very tight parameter distribution high

More information

IDB30E120. Fast Switching Emitter Controlled Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C

IDB30E120. Fast Switching Emitter Controlled Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C Fast Switching Emitter Controlled Diode Feature 1200 V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM

More information

IGW15T120. TrenchStop Series

IGW15T120. TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology Approx. 1.0V reduced V CE(sat) compared to BUP313 Short circuit withstand time 10µs Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop

More information

TrenchStop Series I C

TrenchStop Series I C Low Loss IGBT in TrenchStop and Fieldstop technology Very low V CE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5µs Designed for : Freuency Converters Uninterrupted

More information

BSS670S2L. OptiMOS Buck converter series. Product Summary. Feature V DS 55 V. R DS(on) 650 mω. Enhancement mode I D 0.54 A. Logic Level.

BSS670S2L. OptiMOS Buck converter series. Product Summary. Feature V DS 55 V. R DS(on) 650 mω. Enhancement mode I D 0.54 A. Logic Level. BSS67S2L OptiMOS Buck converter series Feature NChannel Enhancement mode Logic Level Product Summary V DS 55 V R DS(on) 65 mω I D.54 PGSOT 23 Type Package Ordering Code BSS67S2L PGSOT 23 Q6742S452 Marking

More information

single common cathode common cathode

single common cathode common cathode Silicon Tuning Diodes High capacitance ratio High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance

More information

Soft Switching Series I C I F I FSM

Soft Switching Series I C I F I FSM Reverse Conducting IGBT with monolithic body diode Features: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200

More information

IKW40N120T2 TrenchStop 2 nd Generation Series

IKW40N120T2 TrenchStop 2 nd Generation Series Low Loss DuoPack : IGBT in 2 nd generation TrenchStop with soft, fast recovery antiparallel Emitter Controlled Diode Best in class TO247 Short circuit withstand time 10 s Designed for : Frequency Converters

More information

single single single 150 C Operating temperature range T op Storage temperature T stg

single single single 150 C Operating temperature range T op Storage temperature T stg Silicon PIN Diode Current-controlled RF resistor for switching and attenuating applications Frequency range MHz... 2 GHz Especially useful as antenna switch in TV-sat tuners Very low harmonics Pb-free

More information

SKP10N60 SKB10N60, SKW10N60

SKP10N60 SKB10N60, SKW10N60 Fast SIGBT in NPTtechnology with soft, fast recovery antiparallel EmCon diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed

More information

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 40 Turn off safe operating area V CE 600V, T j 150 C - 40.

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 40 Turn off safe operating area V CE 600V, T j 150 C - 40. Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter G C E NPT-Technology

More information

IGP03N120H2 IGW03N120H2

IGP03N120H2 IGW03N120H2 HighSpeed 2Technology Designed for: SMPS Lamp Ballast ZVSConverter optimised for softswitching / resonant topologies G C E 2 nd generation HighSpeedTechnology for 1200V applications offers: loss reduction

More information

IDP45E60. Fast Switching Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C. Features 600V Emitter Controlled technology

IDP45E60. Fast Switching Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C. Features 600V Emitter Controlled technology Fast Switching Diode Features 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Pb-free lead plating; RoHS compliant Halogen-free

More information

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62.

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62. Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter NPT-Technology

More information

SIPMOS Power-Transistor

SIPMOS Power-Transistor SPP18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175 C operating temperature Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A PG-TO22-3 Type Package

More information

Rev Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D

Rev Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D SIPMOS PowerTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant Product Summary V DS 4 V R DS(on) 25 Ω I D.17 SOT223 Type Package Tape and Reel Information

More information

This chip is used for: power module BSM 75GD120DN2. Emitter pad size 8 x ( 2.99 x 1.97 ) Thickness 200 µm. Wafer size 150 mm

This chip is used for: power module BSM 75GD120DN2. Emitter pad size 8 x ( 2.99 x 1.97 ) Thickness 200 µm. Wafer size 150 mm IGBT Chip in NPT-technology Features: 1200V NPT technology low turn-off losses short tail current positive temperature coefficient easy paralleling integrated gate resistor This chip is used for: power

More information

OptiMOS Power-Transistor

OptiMOS Power-Transistor OptiMOS Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q11 qualified MSL1 up to 26 C peak reflow 175 C operating temperature Green package (lead free) Product Summary V DS 75 V R

More information

Rev Type Package RoHS compliant Tape and Reel Information BSP125 P-SOT-223 No

Rev Type Package RoHS compliant Tape and Reel Information BSP125 P-SOT-223 No SIPMOS PowerTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant available Product Summary V DS 6 V R DS(on) 45 Ω.12 PGSOT223 Type Package RoHS compliant

More information

IDB30E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 30 A V F 1.5 V T jmax 175 C

IDB30E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 30 A V F 1.5 V T jmax 175 C Fast Switching EmCon Diode Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM

More information

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time

More information

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast IGBT in NPTtechnology with soft, fast recovery antiparallel EmCon diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed

More information

SGB02N120. Fast IGBT in NPT-technology. Power Semiconductors 1 Rev. 2_3 Jan 07

SGB02N120. Fast IGBT in NPT-technology. Power Semiconductors 1 Rev. 2_3 Jan 07 Fast IGBT in NPT-technology Lower E off compared to previous generation Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter

More information

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time

More information

BFQ65. Silicon NPN Planar RF Transistor. Applications. Features. Absolute Maximum Ratings. Maximum Thermal Resistance

BFQ65. Silicon NPN Planar RF Transistor. Applications. Features. Absolute Maximum Ratings. Maximum Thermal Resistance Silicon NPN Planar R Transistor Applications R-amplifier up to GHz range specially for wide band antenna amplifier. Electrostatic sensitive device. Observe precautions for handling. eatures High power

More information

Data Sheet BUY25CS54A-01

Data Sheet BUY25CS54A-01 HiRel RadHard Power-MOS Low R DS(on) Single Event Effect (SEE) hardened LET 85, Range: 118µm LET 55, Range: 90µm V GS = -10V, V DS = 250V V GS = -15V, V DS = 250V V GS = -15V, V DS = 120V V GS = -20V,

More information

single single single yellow S HH H Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R

single single single yellow S HH H Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF TV / VTR tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due

More information

single single single yellow S HH H Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R

single single single yellow S HH H Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF TV / VTR tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due

More information