BFS469L6. World's smallest SMD 6-pin leadless package Built in 2 transitors (TR1: die as BFR460L3, TR2: die as BFR949L3)
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1 NPN Silicon RF TWIN Transistor Preliminary data Low voltage/ low current applications Ideal for VCO modules and low noise amplifiers Low noise figure: :.db at.8 GHz :. db at.8 GHz World's smallest SMD 6pin leadless package Built in 2 transitors (: die as BFR460L3, : die as BFR949L3) $ 6 4 # 6 4 "! ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFS469L6 AD =C 2=E 3=C2 4=B2 =E2 6=B TSLP6 Maximum Ratings Collectoremitter voltage Collectoremitter voltage Collectorbase voltage Emitterbase voltage Collector current V CEO V CES V CBO V EBO I C V ma 0 70 Sep003
2 Maximum Ratings Base current Total power dissipation ), T S 04 C, T S 00 C Junction temperature Ambient temperature Storage temperature Thermal Resistance I B P tot T j T A T stg ma 7 mw 0 20 C Junction soldering point 2) R thjs TS is measured on the collector lead at the soldering point to the pcb 2 For calculation of RthJA please refer to Application Note Thermal Resistance K/W Sep003
3 Electrical Characteristics at T A = 2 C, unless otherwise specified DC Characteristics Collectoremitter breakdown voltage V (BR)CEO V, I C = ma, I B = 0, I C = ma, I B = Collectoremitter cutoff current I CES µa, V CE = V, V BE = 0, V CE = V, V BE = Collectorbase cutoff current I CBO na, V CB = V, I E = 0, V CB = 0 V, I E = Emitterbase cutoff current I EBO µa, V EB = 0, V, I C = 0, V EB = V, I C = 0 0. DC current gain h FE, I C = ma, V CE = 3 V 30, I C = ma, V CE = 3 V Electrical Characteristics at T A = 2 C, unless otherwise specified AC Characteristics (verified by random sampling) Transition frequency f T GHz, I C = 30 ma, V CE = 3 V, f = GHz, I C = ma, V CE = 6 V, f = GHz 6 tbd 22 9 Collectorbase capacitance, V CB = 3 V, f = MHz, emitter grounded, V CB = 0 V, f = MHz, emitter grounded C cb pf Collector emitter capacitance C ce, V CE = 3 V, f = MHz, base grounded 0.7, V CE = 0 V, f = MHz, base grounded 0.7 Emitterbase capacitance C eb, V EB = 0, V, f = MHz, collector grounded 0.7, V EB = 0, V, f = MHz, collector grounded Sep003
4 Electrical Characteristics at TA = 2 C, unless otherwise specified AC Characteristics (verified by random sampling) Noise figure F db, I C =ma, V CE = 3 V, f =.8 GHz, Z S = Z Sopt, I C =ma, V CE = 3 V, f = 3 GHz, Z S = Z Sopt, I C =3mA, V CE = 6 V, f = GHz, Z S = Z Sopt, I C =3mA, V CE = 8 V, f =.8 GHz, Z S = Z Sopt..4.3 Power gain, maximum stable ) G ms, I C = ma, V CE = 3 V, Z S =Z Sopt, Z L =Z Lopt, f =.8 GHz 4., I C = 0 ma, V CE = 8 V, Z S =Z Sopt, Z L =Z Lopt, f = 0.9 GHz, I C = 0 ma, V CE = 8 V, Z S =Z Sopt, Z L =Z Lopt, f =.8 GHz 4 Power gain, maximum available ) G ma 0, I C = ma, V CE = 3 V, Z S = Z Sopt, Z L = Z Lopt, f =,8 GHz Transducer gain S 2e 2, I C =ma, V CE = 3 V, Z S =Z L =0Ω, f=.8ghz, I C =ma, V CE = 3 V, Z S =Z L =0Ω, f=3ghz, I C =ma, V CE = 6 V, Z S =Z L =0Ω, f=ghz, I C =0mA, V CE = 8 V, Z S =Z L =0Ω, f=.8ghz 2. 9, Third order intercept point at output 2) IP 3, V CE =3V, I C =ma, Z S =Z L =0Ω, f=.8ghz, V CE =8V, I C =0mA, Z S =Z L =0Ω, f=.8ghz db Compression point at output, I C =ma, V CE =3V, Z S =Z L =0Ω, f=.8ghz, I C =0mA, V CE =8V, Z S =Z L =0Ω, f=.8ghz P db 2 6 dbm Gma = S 2e / S 2e (k(k²) /2 ), G ms = S 2e / S 2e 2 IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 0Ω from 0. MHz to 6 GHz 4 Sep003
5 Published by Infineon Technologies AG, St.MartinStrasse 3, 8669 München Infineon Technologies AG 04. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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