Oscillateur paramétrique optique en

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1 C. Ozanam 1, X. Lafosse 2, I. Favero 1, S. Ducci 1, G. Leo 1 1 Université Paris Diderot, Sorbonne Paris Cité, Laboratoire MPQ, CNRS-UMR 7162, Paris, France, 2 Laboratoire de Photonique et Nanostructures, Marcoussis, France. Oscillateur paramétrique optique en guide d ondes AlGaAs/AlOx Optique Bretagne 2015 JNCO, Rennes

2 Motivation Fibred telecom MIR spectroscopy LDs QCLs Parametric Sources, OPOs Ideal source : Continuously tunable From NIR to MIR Compact Room-temperature operation State of the art : OPOs Laser diodes, QCLs Goal : electrically pump integrated OPO

3 LASER-OPO analogies Oscillation granted by an optical cavity filled with an amplifying medium Triggered by Laser Spontaneous emission OPO Parametric fluorescence Ruby laser LiNbO 3 OPO Amplification mechanism Optical transition Stimulated emission Resonant Parametric amplification Non-resonant 1970? Wavelength tunability Small Very large AlGaAs DH laser diode Electrically pumped OPO

4 Outline Introduction AlGaAs/AlOx Waveguides o Design and fabrication o Caracterisation : losses and tunability OPO o Design and fabrication o Experimental demonstration Improvements in progress o Optical cavity o Losses management

5 Parametric processes Spontaneous parametric downconversion ħ p ħ i p i s ħ s Parametric amplification p s i p k p k s k i s i k s k i Optical parametric oscillator k p p i s

6 Cavity configurations Threshold Stability & Tunability p i s Simply Resonant p i s Doubly Resonant K K p i s Triply Resonant

7 Interest of (Al)GaAs for integration High nonlinear quadratic coefficient (d eff 110pm/V) Wide transparency range (0.9 to 16 mm) Mature fabrication technologies P (2) L i s h µ sinc 2 æ ç è DkL 2 ö ø with Dk = k p - ks - ki Phase matching?

8 AlGaAs χ (2) waveguides in the near IR Phase matching techniques Quasi PM Modal PM Form birefringence PM

9 AlGaAs χ (2) waveguides in the near IR Phase matching techniques Quasi PM K Efficiency K Fabrication Modal PM Form birefringence PM Yu et al. J. Crystal Growth 301, 163 (2007) * Oron et al. Proc. of SPIE 8240 (2012)

10 AlGaAs χ (2) waveguides in the near IR Phase matching techniques Quasi PM K Efficiency K Fabrication Modal PM Efficiency Fabrication Form birefringence PM Abolghasem et al. Opt. Exp. 17, 9460 (2009) Orieux et al. CLEO JW4A.114 (2012)

11 AlGaAs χ (2) waveguides in the near IR Phase matching techniques Quasi PM K Efficiency K Fabrication AlOx Modal PM Efficiency Fabrication Form birefringence PM Efficiency K Fabrication Fiore et al. Nature 391, 463 (1998) De Rossi et al. Appl. Phys. Lett. 79, 3758 (2001)

12 AlGaAs χ (2) waveguides in the near IR Phase matching techniques Quasi PM K Efficiency K Fabrication AlOx Modal PM Efficiency Fabrication Form birefringence PM Efficiency K Fabrication Fiore et al. Nature 391, 463 (1998) De Rossi et al. Appl. Phys. Lett. 79, 3758 (2001)

13 Structure design Refractive index at 2.12 µm s c TM 00 (1.064mm) substrate (s) c TE 00 (2.128mm) cladding (c) s Normalized field intensity Vertical confinement GaAs / Al 0.70 Ga 0.30 As Artificial birefringence Insertion of AlOx barriers Height (µm) 0.0 Type I phase-matching n TE00 (2.128 µm) = n TM00 (1.064 µm)

14 Sample fabrication MBE epitaxy

15 Sample fabrication MBE epitaxy Resist coating

16 Sample fabrication MBE epitaxy Resist coating Photolithography

17 Sample fabrication MBE epitaxy Resist coating Photolithography Resist development

18 Sample fabrication MBE epitaxy Resist coating Photolithography Resist development Wet etching

19 Sample fabrication MBE epitaxy Resist coating Photolithography Resist development Wet etching Resist removal

20 Sample fabrication MBE epitaxy Resist coating Photolithography Resist development Wet etching Resist removal Oxidation

21 Sample fabrication MBE epitaxy Resist coating AlAs Photolithography Resist development Wet etching Resist removal Oxidation GaAs Wet lateral thermic oxidation AlOx

22 Sample fabrication MBE epitaxy Resist coating Photolithography Resist development Wet etching Resist removal Oxidation

23 Sample fabrication Width = µm Height = 3 µm MBE epitaxy Resist coating Photolithography Resist development Wet etching Resist removal Oxidation

24 Linear characterization nm Ti:Sapphire transmission 4 TE 00 TM ( P ) 2-3 cm -1 a (cm -1 ) 3 2 TM nm Fabry-Perot fringes TE ( s,i ) 1 cm l (nm) λ > 1.1 m : Scattering λ< 1.1 m : Absorption

25 SPDC characterization Tunability n TM /λ P = n TE /λ s + n TE /λ i Conversion efficiency η 0 = 1500 %W -1 cm -2 Parametric gain coefficient g = 1.3 cm -1 (@ P P = 100 mw

26 OPO cavity design DROPO i P s Bragg mirror 0.5% 99% Dielectric materials SiO 2 /TiO 2 Stack calculation (MacLeod) 6 bi-layers, thick tot = 3.65 µm

27 OPO cavity fabrication Protection of the sample with softly baked photoresist Cleavage of the to-be-coated facet Positionning in an holder Ion Assisted Deposition Lift-off of the resist + dielectric pollution Measured values R mod (2.12 µm) = 90 ± 5 % R mod (1.06 µm) = 11 ± 5 %

28 Experimental demonstration Waveguide with mirrors L = 2 mm P 3 cm -1, S,I 1 cm -1 p at degeneracy P p th 210 mw But P p max 230 mw...

29 Experimental demonstration P p th 210 mw => Can it be lower?

30 Experimental demonstration P p max 230 mw => Can it be higher?

31 R (%) New optical cavity design DPP DROPO i P s Bragg mirror with phase-matching layer Bjorkholm et al. IEEE JQE 6, 797(1970) % 96.6% Dielectric materials SiO 2 /TiO 2 60 Stack calculation (Transfert Matrix D simulations) 6 bi-layers, thick tot = 3.36 µm λ (nm)

32 Double-pass DROPO DPP DROPO P i s Waveguide with mirrors L = 2 mm P 3 cm -1, S,I 0.6 cm -1 R mod,in (TE, λ s,i ) = 0.61±0.05 R mod,out (TE, λ s,i ) = 0.67±0.12 T mod,in (TM, λ p ) = 0.68 ± 0.04 R mod,out (TM, λ p ) 0.74 P p th 172 mw

33 Losses management 4 TE 00 Urbach tail-like behavior at pump wavelength a (cm -1 ) TM 00 Hypothesis: absorption by residual oxidation products Use GaInP barriers [Lee et al. Jpn. JAP 39, 2583 (2000)] l (nm) AlOx Ga 0.5 In 0.5 P Barrier (Al)GaAs New sample presently under caracterization

34 Optical cavity fabrication Mirrors Walls against air Accumulation of heat, limitation of P p,max Idea: Coating of the waveguides for better heatsink Protection of the waveguides during mirror deposition with glass: permanent coating 6,3 µm BCB (Benzocyclobutene) 2 µm

35 Conclusion First near-ir semiconductor OPO in waveguide Significant step towards an electrically injected OPO onchip Improvements explored: Cavity opimization Threshold under 200 mw with a DP-DROPO Losses control New equipment Epitaxial modifications Under caracterization Heat management

36 Merci de votre attention!

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