September 21, 2005, Wednesday

Size: px
Start display at page:

Download "September 21, 2005, Wednesday"

Transcription

1 , Wednesday Doping and diffusion I Faster MOSFET requires shorter channel P + Poly Al Al Motivation Requires shallower source, drain Al P + Poly Al source drain Shorter channel length; yes, but same source & drain depth means drain field dominates gate field => drain-induced barrier lowering DIBL Shallower source, drain depth demands better control in doping & diffusion. CHANNEL ASPECT RATIO =>ρ s 1 How are shallow doped layers made? 1) Predeposition: controlled number of dopant species at surface 6s: film or gas phase of dopant at surface c(x) Surface concentration is limited by equilibrium solubility Now: Ion implant (non-equilibrium), heat substrate to diffuse dopant but ions damage target requires anneal, x changes doping, c( ) Soon: return to film or gas phase of dopant at surface ) Drive-in process: heat substrate after predeposition, diffusion determines junction depth, sharpness c(x) Need sharper diffusion profiles: c x depth 1

2 Figure removed for copyright reasons. Please see: Figures in Ghandi, S. VLSI Fabrication Principles: Silicon and Gallium Arsenide. nd ed. New York, NY: Wiley-Interscience, ISBN:

3 , Wednesday c) Mass (or heat) flow J, d) due to concentration gradient J ( area t)= D c Fick I c(, t ) J = + Inflow out dc() J in = J () =+J ()J+ ( ) J out = J+ ( ) dt area t dc = J ( ) J+ ( ) dj dt d dc() dt or if D is constant = d d D C Fick II dc(, t) = D C,t ( ) dt These Eqs => time evolution of some initial conditions & boundary conditions t > Time dep. Schrödinger Eq. +ih t Diffusing species must be soluble In host = h m + V 5 Atomistic picture of diffusion in solids See web site for movies: En Most important is vacancy diffusion. i f E a Initial and final states have same energy Also possible is direct exchange ( = broken bond) Higher energy barrier or break more bonds => lower value of D = D exp( E kt ) 6 3

4 , Wednesday steps Atomistic picture of vacancy diffusion for diffusion: 1) create vacancy ) achieve energy E a n v = N v = exp!.6 % '! N kt & v =! exp E & % a ( kt ' Vacancy diffusion ν a E VD D ~ a x v = a! exp E v + E a & % kt ' (! cm & s % D = D exp! E VD kt % Contains ν Debye frequency! 3 k B T h = 9 11 s s 1 7 Solubility limits 1. Sample phase diagram Liquid From phase diagram: 1. T/T m Liq + Sol Solubility dopant in Si Solid T/T m B As P Si at% dopant 1 at% 1 at% Impurity content (cm -3 ) Impurity content (cm -3 ) 8 4

5 , Wednesday Solubility limits Figure removed for copyright reasons. Please see: Figure -4 in Campbell, S. The Science and Engineering of Microelectronic Fabrication. 1st ed. New York, NY: Oxford University Press, ISBN: Analytic Solution to Diffusion Equations, Fick II:!C!t = D! C! There are many different solutions to this or any DE; the correct solution is the one that satisfies the BC. Steady state, dc/dt = Implies either a) D = C() c() may be curved or b) d c/d = c(x) linear In oxidation we assumed steady state : C() = a + b O diffusion through SiO, where flux,j =!D C is same everywhere. =!Db, Not necessarily so in diffusion where non-linear c() can exist and be froen in at D = 1 5

6 , Wednesday For solutions, boundary condition, consider classical experiment: Diffusion couple: thindopant layer on rod face, press identical pieces together, heat. Then study diffusion profile in sections. symmetry ( ) BC ( ) d dc,t C, t d = Q = const. ( /area) = t = IC C, ( )= C(,t)= ( ) BC 11 Analytic Solution to Diffusion Equations J = D c, c t = D c I. Drive in of fixed amount, Q, of dopant; solution is Gaussian c,t ( )= const exp 4Dt Predeposition is delta function, (). C,t ( )= dc(,t) = d Q Dt Width of Gaussian = t = Dose, Q, amount of dopant in sample, is constant. 1 exp 4Dt a = Dt c, ( )= ( ) t > c(,t)= ( ) = diffusion length a (a is large relative to width of predeposition) C, t d = Q = const. ( /area) Units /vol = Q/(length ) 1/ So Q has units /area 1 6

7 , Wednesday Solutions for other I.C./B.C. can be obtained by superposition: II. Limitless source of dopant (e.g. growth in presence of vapor) C, t IC C, BC ( ) = ( ) = C Const C t ( ) = C C!,t (, t ) BC C imp (, t) =! u= Dt exp d % erf u [ ] ( ) = erf & ( ' Dt ) C t =! = 4Dt ( ) 4Dt erf 13 Other I.C./B.C. (cont.): erf 1 ( ) erfc( u) =1! erf ( u) c ( ) = C surf erfc C,t! Dt %&, t > a = diffusion length = Dt (D 1-15 ) (t = 1 3 ) a. µm Dose! Q = C(,t)d = Dt C = a! C C(, t) = C C(,) = Const c t c(, t) = c limited by solid solubility Dose, Q, amount of dopant in sample, increases as t 1/. 14 7

8 Figure removed for copyright reasons. Please see: Figure 7-8 in Plummer, J., M. Deal, and P. Griffin. Silicon VLSI Technology: Fundamentals, Practice, and Modeling. Upper Saddle River, NJ: Prentice Hall,. ISBN:

9 , Wednesday Internal E fields alter Fick s Law Heavily doped layer can generate its own field due to displacement of mobile carriers from ionied dopants: A A p-type Si h h h + A h h A A C A C C Mobile hole A (dopant concentration + + ions) Net charge - + E E enhances diffusion of A - to right, (also down concentration gradient). J mass =!D C + CµE! D! C + CqE! ' & ) % kt ( A - drift diffusion µ = Dq kt (units) Einstein relation from Brownian motion 17 Neutral and charged impurities, dopants If impurity is Gp. IV (e.g. Ge): uncharged, no e or h Si But if impurity = B, P As it will be charged: So vacancies can be charged As e - For small dopant concentration, different diffusion processes are independent, but generally: (these D o are NOT same as single activation energy values) Ea kt D e = D! D + D 1 n + D % n & ( +... D + % p & ( + D + % p & ( +... electrons n i n i ' p i ' p i ' Intrinsic Diffusivities and Activation Energies of Substitutional Diffusers in Silicon* D i o D i + D i - D i D o E o D o E o D o E o D o E o P As Sb B Al Ga * D in cm /s; E in ev. holes Power series representation; higher orders in n describe dopant-dopant interactions [ Higher activation energy for charged vacancy diffusion; prefactor is greater] 18 Figure by MIT OCW. 9

10 , Wednesday What is n? D off = D + D! n % ' & + n % D! ' D + p % ' & & + p % D+ ' +... & n i n i n is local free electron concentration in host. n > n i always n! N D + N D % ' + n & i So clearly, D eff = D + D - (n/n i ) + can be >> D = D exp(-e VD /kt) (provided D 1- etc not too small) For intrinsic semiconductor or N D << n i, n = p = n i n i n i See example Plummer, p. 41, As n i = 7.14 x 1 18 at 1 C D eff As = D + D - (n/n i ) +.67 x x 1-15 (n/n i ) N D = 1 18 : D eff As = 1.43 x 1-15 N D = 1 : D eff As = 16.6 x 1-15 D eff = D + D - (1) + Caution: these numbers not from table on prior slide (Single-activation-energy value: D = 1.5 x 1-15 ) 19 Internal E field C h h h C A h + h Mobile hole concentration Is related to concentration dependent diffusion n D off = D + D! % ' + D! n % ' +... & & n i n i Net charge - + E E enhances diffusion of A - to right, (also down concentration gradient). Higher dopant concentration means greater charge separation, Δq, thus larger internal electric fields. 1

11 , Wednesday Exercise Calculate diffusivity of P in Si at 1 C for a) c P < n i b) c P = cm -3 c) compare diffusion length b) with uncharged estimate a) c P < n i = 1 19 from Fig 1.16 Figure removed for copyright reasons. Please see: Figure 1.16 in Plummer et al.,. 1 Exercise Calculate diffusivity of P in Si at 1 C for a) c P < n i b) c P = cm -3 c) compare diffusion length b) with uncharged estimate a) c P < n i = 1 19 D P = 3.85exp! 3.66 % Diffusion of P in Si kt & ' =1.3(1!14 (cm s!1 ) D! P = 4.4exp! 4 D kt% = 6.63&1!16 (cm s!1 ) E a D - E - a (cm /s) (ev) (cm /s) (ev) D = D! n P + D % P ' =1.37 (1!14 (cm s!1 ) & n i 1 8 n i 6 4 n! N D + N D % ' + n & i Plummer, Eq N D /n i Linear approximation Single-valued D Better than single-activation-energy : D P = 4.7exp! 3.68 % kt & ' =1.3(1!14 (cm s!1 ) 11

12 , Wednesday Exercise Calculate diffusivity of P in Si at 1 C for a) c P < n i b) c P = cm -3 c) compare diffusion length b) with uncharged estimate b) c P = N D = n! N D + N D % ' + n & i =! ! = 4.4! 1 19 cm 3 Plummer, Eq D = D! n % P + D P & ' = 1.3 ( 4.4 1! ( 1!16 % 1 & ' = 1.57 ( 1!14 (cm s!1 ) vs 1.37 n i c) a = Dt, a = 1.3! 1 14! 36 =.137 µm 1 hr a P = 1.57! 1 14! 36 =.151 µm (This is a measure of the depth of doping.) 3 Consequence: Diffusion is enhanced at high dopant concentrations, giving sharper diffusion profile D eff (T) D ev D eff 3.99 ev Graph removed for copyright reasons. 1 3 /T D 3.44 ev 4 1

13 , Wednesday Effect of oxidation of Si on diffusion Plummer Fig B and P observed to diffuse faster when Si surface is oxidied, Sb slower. Why? So far we have concentrated on diffusion by vacancy mechanism Figure removed for copyright reasons. Please see: Figure 7-36 in Plummer et al.,. Different behavior of B and Sb under oxidation suggests a different mechanism may dominate in these two dopants 5 Effect of surface oxidation on diffusion in Si Si + Oxygen SiO x + Si interstitial Interstitial oxygen => lattice expansion, stacking faults form along (111) planes Because B and P diffuse mainly by an interstitial process; their diffusion is enhanced by oxidation. Si But Sb is large and diffuses only by vacancies. Si interstitials created by oxidation, Si recombine and reduce concentration of vacancies Si suppressing diffusion of Sb atoms. Si Si Sb Si Si Si Si 6 13

14 , Wednesday Diffusion process is different for different species. Figure removed for copyright reasons. Please see: Figure 7-15 in Plummer et al.,. 7 Review: Doping and diffusion, small dose dc(, t) dt = d! d D dc d Plus I.C. and B.C.s C δ fn If predeposition is small dose, followed by a higher T, longer t ( larger a ~ Dt ) drive-in process. C (,) C (,t) inc Dt 1) I.C. C (, ) = > ) B.C. C (, t ) =, dc(,t)/d = 3) Fixed dose Q = a! c Q C(,t) =!Dt exp ' % * ) ( a&, + C(, t) = Q decreases like t -1/!Dt 8 14

15 , Wednesday Review: Doping and diffusion, large dose Diffusion preceded by pre-deposition to deliver a large amount of impurity. If pre-dep is inexhaustible or equivalently, if a ~ Dt is small, then C 1) I.C. C (, ) = > ) B.C. C (, t ) = Might be SiO + dopant inc Dt 3) B.C. C (, t ) = C! C(,t) = C erfc a a = Dt Dose! Q = C(,t)d = Dt C = a! C C limited by solid solubility 9 Junctions between different doped regions Diffuse B at high concentration, into n-type Si, (uniformly doped, N D, with P). Want to know depth of p-n junction ( N A = N D ) Consider limitless dopant source (i.e. erfc) boron phosphorus Small Dt C Boron Log C C B! (, t) = C erfc Dt %& N D (n-type Si) junction! N D = C erfc jct a %&! jct = a erfc -1 N D C % & a = Dt 3 15

16 Figure removed for copyright reasons. Please see: Figure 4.14 in Ghandi, 1994.

17 , Wednesday Internal E fields alter Fick s Law D is not a constant, but depends on c(x) Figure removed for copyright reasons. Please see: Figure 7-6 in Plummer et al.,. 33 Exercise n-type Si, N D = 1 16 cm -3 is doped with boron from a const source with C (boron) = 1 18 cm -3 C (boron) 1 18 /cm 3 ( ) = C erfc a C,t!, N D = 1 16 cm -3 Question: If exposed to c at 1 C for 1 hr, what is junction depth?! jct = a erfc -1 N D C % & = Dt erfc -1 1 ' [ ] Let erfc -1 [1 - ] = x, erfc[x] =.1 = 1-erf[x], erf [x] =.99 From appendix, x = 1.8 = /[(Dt) 1/ ] ( ) =.37exp! 3.46 D boron % ' 173 K kt & cm /s a = Dt = 3.31!1 6 cm =.33µm jct =.33!1.8 =.6µm 34 17

18 , Wednesday jct =.33!1.8 =.6µm jct D (boron) From jct (t) and jct () =, you can calculate junction depth at different time: Question: Now constant source is removed and this dose,c(, 1hr), is driven in farther for 1 hr at 11 C. Now where is junction? 1373 K Q = 7.57!1 15 cm s 1 hr t! C(,1hr) d = ac = cm - Dt = 5.!1 6 cm jct = Dt erfc -1 [ 1! ] jct = a ln N D Q % ' =1.8 (1 )5 cm =.18µm!Dt & 35 R =! L A (), Measuring diffusion profiles Resistance resistivity conductivity! = RA L (m)! = 1 = nqµ I L Define sheet resistance A t! t R s = RA Lt = R W L ( sq ) But n, µ are functions of position due to doping t! = q n( ) µ ( n)d t! = 1 = t q nµd an average measurement of n + _ Spreading resistance probe: (Developed at Bell Labs in 4s) φ 36 18

19 , Wednesday 4-point probe Measuring diffusion profiles I Also square array (Van der Pauw method) 5 micron spacing Equipotentials V I V These average n if done from surface. These are most useful if done on beveled wafer: sample Polish off depth profile 37 Hall effect: electrical transport in magnetic field. B I v _ e + + _ - _ + e - e -e- + + I B + + h + v h + F = qv B J = nq v V I F q = E = J H nq B E H = R H ( J B) I V Hall coefficient => charge sign and concentration R H is slope of V vs B data R H = 1 nq Again an average measurement V H Large hole Concentration p B Small electron concentration n 38 19

20 , Wednesday Capacitance Use MOS structure, gate & substrate are electrodes C =!A d Useful for lightly doped regions Depletion width SIMS (Secondary ion mass spectroscopy) Ion source 1-5 k ev Sputters surface Secondary ions to mass spectrometer Depth profile RBS (Rutherford back scattering) He + Backscatter energy depends on depth and impurities 1 MeV Ions penetrate Backscatter intensity (mass impurities ) 39

DIFFUSION - Chapter 7

DIFFUSION - Chapter 7 DIFFUSION - Chapter 7 Doping profiles determine many short-channel characteristics in MOS devices. Resistance impacts drive current. Scaling implies all lateral and vertical dimensions scale by the same

More information

Properties of Error Function erf(z) And Complementary Error Function erfc(z)

Properties of Error Function erf(z) And Complementary Error Function erfc(z) Properties of Error Function erf(z) And Complementary Error Function erfc(z) z erf (z) π e -y dy erfc (z) 1 - erf (z) erf () erf( ) 1 erf(- ) - 1 erf (z) d erf(z) dz π z for z

More information

Dopant Diffusion. (1) Predeposition dopant gas. (2) Drive-in Turn off dopant gas. dose control. Doped Si region

Dopant Diffusion. (1) Predeposition dopant gas. (2) Drive-in Turn off dopant gas. dose control. Doped Si region Dopant Diffusion (1) Predeposition dopant gas dose control SiO Si SiO Doped Si region () Drive-in Turn off dopant gas or seal surface with oxide profile control (junction depth; concentration) SiO SiO

More information

Section 7: Diffusion. Jaeger Chapter 4. EE143 Ali Javey

Section 7: Diffusion. Jaeger Chapter 4. EE143 Ali Javey Section 7: Diffusion Jaeger Chapter 4 Surface Diffusion: Dopant Sources (a) Gas Source: AsH 3, PH 3, B 2 H 6 (b) Solid Source BN Si BN Si (c) Spin-on-glass SiO 2 +dopant oxide (d) Liquid Source. Fick s

More information

Diffusion and Ion implantation Reference: Chapter 4 Jaeger or Chapter 3 Ruska N & P Dopants determine the resistivity of material Note N lower

Diffusion and Ion implantation Reference: Chapter 4 Jaeger or Chapter 3 Ruska N & P Dopants determine the resistivity of material Note N lower Diffusion and Ion implantation Reference: Chapter 4 Jaeger or Chapter 3 Ruska N & P Dopants determine the resistivity of material Note N lower resistavity than p: due to higher carrier mobility Near linear

More information

Dopant Diffusion Sources

Dopant Diffusion Sources Dopant Diffusion (1) Predeposition dopant gas dose control SiO Si SiO Doped Si region () Drive-in Turn off dopant gas or seal surface with oide profile control (junction depth; concentration) SiO SiO Si

More information

Review of Semiconductor Fundamentals

Review of Semiconductor Fundamentals ECE 541/ME 541 Microelectronic Fabrication Techniques Review of Semiconductor Fundamentals Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Page 1 Semiconductor A semiconductor is an almost insulating material,

More information

collisions of electrons. In semiconductor, in certain temperature ranges the conductivity increases rapidly by increasing temperature

collisions of electrons. In semiconductor, in certain temperature ranges the conductivity increases rapidly by increasing temperature 1.9. Temperature Dependence of Semiconductor Conductivity Such dependence is one most important in semiconductor. In metals, Conductivity decreases by increasing temperature due to greater frequency of

More information

Ion Implant Part 1. Saroj Kumar Patra, TFE4180 Semiconductor Manufacturing Technology. Norwegian University of Science and Technology ( NTNU )

Ion Implant Part 1. Saroj Kumar Patra, TFE4180 Semiconductor Manufacturing Technology. Norwegian University of Science and Technology ( NTNU ) 1 Ion Implant Part 1 Chapter 17: Semiconductor Manufacturing Technology by M. Quirk & J. Serda Spring Semester 2014 Saroj Kumar Patra,, Norwegian University of Science and Technology ( NTNU ) 2 Objectives

More information

Modelling for Formation of Source/Drain Region by Ion Implantation and Diffusion Process for MOSFET Device

Modelling for Formation of Source/Drain Region by Ion Implantation and Diffusion Process for MOSFET Device Modelling for Formation of Source/Drain Region by Ion Implantation and Diffusion Process for MOSFET Device 1 Supratim Subhra Das 2 Ria Das 1,2 Assistant Professor, Mallabhum Institute of Technology, Bankura,

More information

EE-612: Lecture 22: CMOS Process Steps

EE-612: Lecture 22: CMOS Process Steps EE-612: Lecture 22: CMOS Process Steps Mark Lundstrom Electrical and Computer Engineering Purdue University West Lafayette, IN USA Fall 2006 NCN www.nanohub.org Lundstrom EE-612 F06 1 outline 1) Unit Process

More information

MATHEMATICS OF DOPING PROFILES. C(x,t) t. = D 2 C(x,t) x 2. 4Dt dx '

MATHEMATICS OF DOPING PROFILES. C(x,t) t. = D 2 C(x,t) x 2. 4Dt dx ' EE43 MATHEMATICS OF DOPING PROFILES N. Cheung The diffusion equation with constant D : has the general solution: C(x,t) = C(x,t) = D 2 C(x,t) 4πDt F(x ' ) e -(x-x' ) 2 4Dt dx ' - where F(x') is the C(x,t)

More information

Section 12: Intro to Devices

Section 12: Intro to Devices Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals Bond Model of Electrons and Holes Si Si Si Si Si Si Si Si Si Silicon

More information

Xing Sheng, 微纳光电子材料与器件工艺原理. Doping 掺杂. Xing Sheng 盛兴. Department of Electronic Engineering Tsinghua University

Xing Sheng, 微纳光电子材料与器件工艺原理. Doping 掺杂. Xing Sheng 盛兴. Department of Electronic Engineering Tsinghua University 微纳光电子材料与器件工艺原理 Doping 掺杂 Xing Sheng 盛兴 Department of Electronic Engineering Tsinghua University xingsheng@tsinghua.edu.cn 1 Semiconductor PN Junctions Xing Sheng, EE@Tsinghua LEDs lasers detectors solar

More information

Ion Implantation. alternative to diffusion for the introduction of dopants essentially a physical process, rather than chemical advantages:

Ion Implantation. alternative to diffusion for the introduction of dopants essentially a physical process, rather than chemical advantages: Ion Implantation alternative to diffusion for the introduction of dopants essentially a physical process, rather than chemical advantages: mass separation allows wide varies of dopants dose control: diffusion

More information

Lecture 04 Review of MOSFET

Lecture 04 Review of MOSFET ECE 541/ME 541 Microelectronic Fabrication Techniques Lecture 04 Review of MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) What is a Transistor? A Switch! An MOS Transistor V GS V T V GS S Ron D

More information

Chapter 3 Engineering Science for Microsystems Design and Fabrication

Chapter 3 Engineering Science for Microsystems Design and Fabrication Lectures on MEMS and MICROSYSTEMS DESIGN and MANUFACTURE Chapter 3 Engineering Science for Microsystems Design and Fabrication In this Chapter, we will present overviews of the principles of physical and

More information

Ion Implantation ECE723

Ion Implantation ECE723 Ion Implantation Topic covered: Process and Advantages of Ion Implantation Ion Distribution and Removal of Lattice Damage Simulation of Ion Implantation Range of Implanted Ions Ion Implantation is the

More information

Semiconductors Reference: Chapter 4 Jaeger or Chapter 3 Ruska Recall what determines conductor, insulator and semiconductor Plot the electron energy

Semiconductors Reference: Chapter 4 Jaeger or Chapter 3 Ruska Recall what determines conductor, insulator and semiconductor Plot the electron energy Semiconductors Reference: Chapter 4 Jaeger or Chapter 3 Ruska Recall what determines conductor, insulator and semiconductor Plot the electron energy states of a material In some materials get the creation

More information

Semiconductor Physics Problems 2015

Semiconductor Physics Problems 2015 Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible

More information

Make sure the exam paper has 9 pages (including cover page) + 3 pages of data for reference

Make sure the exam paper has 9 pages (including cover page) + 3 pages of data for reference UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences Spring 2006 EE143 Midterm Exam #1 Family Name First name SID Signature Make sure the exam paper

More information

A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced.

A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced. Semiconductor A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced. Page 2 Semiconductor materials Page 3 Energy levels

More information

Introduction to Semiconductor Physics. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India

Introduction to Semiconductor Physics. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India Introduction to Semiconductor Physics 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India http://folk.uio.no/ravi/cmp2013 Review of Semiconductor Physics Semiconductor fundamentals

More information

Quiz #1 Practice Problem Set

Quiz #1 Practice Problem Set Name: Student Number: ELEC 3908 Physical Electronics Quiz #1 Practice Problem Set? Minutes January 22, 2016 - No aids except a non-programmable calculator - All questions must be answered - All questions

More information

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00 1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.

More information

Diffusion. Diffusion = the spontaneous intermingling of the particles of two or more substances as a result of random thermal motion

Diffusion. Diffusion = the spontaneous intermingling of the particles of two or more substances as a result of random thermal motion Diffusion Diffusion = the spontaneous intermingling of the particles of two or more substances as a result of random thermal motion Fick s First Law Γ ΔN AΔt Γ = flux ΔN = number of particles crossing

More information

Classification of Solids

Classification of Solids Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples

More information

Lecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations

Lecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Lecture 1 OUTLINE Basic Semiconductor Physics Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Reading: Chapter 2.1 EE105 Fall 2007 Lecture 1, Slide 1 What is a Semiconductor? Low

More information

Ajay Kumar Gautam Asst. Prof. Electronics & Communication Engineering Dev Bhoomi Institute of Technology & Engineering Dehradun UNIT II

Ajay Kumar Gautam Asst. Prof. Electronics & Communication Engineering Dev Bhoomi Institute of Technology & Engineering Dehradun UNIT II Ajay Kumar Gautam Asst. Prof. Electronics & Communication Engineering Dev Bhoomi Institute of Technology & Engineering Dehradun UNIT II Syllabus EPITAXIAL PROCESS: Epitaxy and its concept, Growth kinetics

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 23, 2018 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2018 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor

More information

Spring Semester 2012 Final Exam

Spring Semester 2012 Final Exam Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters

More information

Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

More information

EE301 Electronics I , Fall

EE301 Electronics I , Fall EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials

More information

Semiconductor Detectors

Semiconductor Detectors Semiconductor Detectors Summary of Last Lecture Band structure in Solids: Conduction band Conduction band thermal conductivity: E g > 5 ev Valence band Insulator Charge carrier in conductor: e - Charge

More information

Diffusion in Extrinsic Silicon and Silicon Germanium

Diffusion in Extrinsic Silicon and Silicon Germanium 1 Diffusion in Extrinsic Silicon and Silicon Germanium SFR Workshop & Review November 14, 2002 Hughes Silvestri, Ian Sharp, Hartmut Bracht, and Eugene Haller Berkeley, CA 2002 GOAL: Diffusion measurements

More information

Changing the Dopant Concentration. Diffusion Doping Ion Implantation

Changing the Dopant Concentration. Diffusion Doping Ion Implantation Changing the Dopant Concentration Diffusion Doping Ion Implantation Step 11 The photoresist is removed with solvent leaving a ridge of polysilicon (the transistor's gate), which rises above the silicon

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Chenming Hu.

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Chenming Hu. UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Spring 2009 Professor Chenming Hu Midterm I Name: Closed book. One sheet of notes is

More information

MOSFET: Introduction

MOSFET: Introduction E&CE 437 Integrated VLSI Systems MOS Transistor 1 of 30 MOSFET: Introduction Metal oxide semiconductor field effect transistor (MOSFET) or MOS is widely used for implementing digital designs Its major

More information

an introduction to Semiconductor Devices

an introduction to Semiconductor Devices an introduction to Semiconductor Devices Donald A. Neamen Chapter 6 Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor Introduction: Chapter 6 1. MOSFET Structure 2. MOS Capacitor -

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 29, 2019 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2019 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor

More information

ECE 142: Electronic Circuits Lecture 3: Semiconductors

ECE 142: Electronic Circuits Lecture 3: Semiconductors Faculty of Engineering ECE 142: Electronic Circuits Lecture 3: Semiconductors Agenda Intrinsic Semiconductors Extrinsic Semiconductors N-type P-type Carrier Transport Drift Diffusion Semiconductors A semiconductor

More information

MOS CAPACITOR AND MOSFET

MOS CAPACITOR AND MOSFET EE336 Semiconductor Devices 1 MOS CAPACITOR AND MOSFET Dr. Mohammed M. Farag Ideal MOS Capacitor Semiconductor Devices Physics and Technology Chapter 5 EE336 Semiconductor Devices 2 MOS Capacitor Structure

More information

Lecture 2. Semiconductor Physics. Sunday 4/10/2015 Semiconductor Physics 1-1

Lecture 2. Semiconductor Physics. Sunday 4/10/2015 Semiconductor Physics 1-1 Lecture 2 Semiconductor Physics Sunday 4/10/2015 Semiconductor Physics 1-1 Outline Intrinsic bond model: electrons and holes Charge carrier generation and recombination Intrinsic semiconductor Doping:

More information

EE 212 FALL ION IMPLANTATION - Chapter 8 Basic Concepts

EE 212 FALL ION IMPLANTATION - Chapter 8 Basic Concepts EE 212 FALL 1999-00 ION IMPLANTATION - Chapter 8 Basic Concepts Ion implantation is the dominant method of doping used today. In spite of creating enormous lattice damage it is favored because: Large range

More information

3.155J/6.152J Microelectronic Processing Technology Fall Term, 2004

3.155J/6.152J Microelectronic Processing Technology Fall Term, 2004 3.155J/6.152J Microelectronic Processing Technology Fall Term, 2004 Bob O'Handley Martin Schmidt Quiz Nov. 17, 2004 Ion implantation, diffusion [15] 1. a) Two identical p-type Si wafers (N a = 10 17 cm

More information

3.1 Introduction to Semiconductors. Y. Baghzouz ECE Department UNLV

3.1 Introduction to Semiconductors. Y. Baghzouz ECE Department UNLV 3.1 Introduction to Semiconductors Y. Baghzouz ECE Department UNLV Introduction In this lecture, we will cover the basic aspects of semiconductor materials, and the physical mechanisms which are at the

More information

6.152J / 3.155J Spring 05 Lecture 08-- IC Lab Testing. IC Lab Testing. Outline. Structures to be Characterized. Sheet Resistance, N-square Resistor

6.152J / 3.155J Spring 05 Lecture 08-- IC Lab Testing. IC Lab Testing. Outline. Structures to be Characterized. Sheet Resistance, N-square Resistor IC Lab Testing Review Process Outline Structures to be Characterized Resistors Sheet Resistance, Nsquare Resistor MOS Capacitors Flatband Voltage, Threshold Voltage, Oxide Thickness, Oxide Charges, Substrate

More information

Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

More information

Make sure the exam paper has 7 pages (including cover page) + 3 pages of data for reference

Make sure the exam paper has 7 pages (including cover page) + 3 pages of data for reference UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences Fall 2005 EE143 Midterm Exam #1 Family Name First name SID Signature Make sure the exam paper

More information

Midterm I - Solutions

Midterm I - Solutions UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Spring 2008 Professor Chenming Hu Midterm I - Solutions Name: SID: Grad/Undergrad: Closed

More information

CMPEN 411 VLSI Digital Circuits. Lecture 03: MOS Transistor

CMPEN 411 VLSI Digital Circuits. Lecture 03: MOS Transistor CMPEN 411 VLSI Digital Circuits Lecture 03: MOS Transistor Kyusun Choi [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] CMPEN 411 L03 S.1

More information

UNIVERSITY OF CALIFORNIA. College of Engineering. Department of Electrical Engineering and Computer Sciences. Professor Ali Javey.

UNIVERSITY OF CALIFORNIA. College of Engineering. Department of Electrical Engineering and Computer Sciences. Professor Ali Javey. UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EE 143 Professor Ali Javey Spring 2009 Exam 2 Name: SID: Closed book. One sheet of notes is allowed.

More information

Section 12: Intro to Devices

Section 12: Intro to Devices Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si

More information

Dopant and Self-Diffusion in Semiconductors: A Tutorial

Dopant and Self-Diffusion in Semiconductors: A Tutorial Dopant and Self-Diffusion in Semiconductors: A Tutorial Eugene Haller and Hughes Silvestri MS&E, UCB and LBNL FLCC Tutorial 1/26/04 1 FLCC Outline Motivation Background Fick s Laws Diffusion Mechanisms

More information

Part 5: Quantum Effects in MOS Devices

Part 5: Quantum Effects in MOS Devices Quantum Effects Lead to Phenomena such as: Ultra Thin Oxides Observe: High Leakage Currents Through the Oxide - Tunneling Depletion in Poly-Si metal gate capacitance effect Thickness of Inversion Layer

More information

Semiconductor Device Physics

Semiconductor Device Physics 1 Semiconductor Device Physics Lecture 3 http://zitompul.wordpress.com 2 0 1 3 Semiconductor Device Physics 2 Three primary types of carrier action occur inside a semiconductor: Drift: charged particle

More information

Electric Field--Definition. Brownian motion and drift velocity

Electric Field--Definition. Brownian motion and drift velocity Electric Field--Definition Definition of electrostatic (electrical) potential, energy diagram and how to remember (visualize) relationships E x Electrons roll downhill (this is a definition ) Holes are

More information

! CMOS Process Enhancements. ! Semiconductor Physics. " Band gaps. " Field Effects. ! MOS Physics. " Cut-off. " Depletion.

! CMOS Process Enhancements. ! Semiconductor Physics.  Band gaps.  Field Effects. ! MOS Physics.  Cut-off.  Depletion. ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 3, 018 MOS Transistor Theory, MOS Model Lecture Outline! CMOS Process Enhancements! Semiconductor Physics " Band gaps " Field Effects!

More information

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006 UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm 2 Name: SID: Closed book. Two sheets of notes are

More information

Effects of Antimony Near SiO 2 /SiC Interfaces

Effects of Antimony Near SiO 2 /SiC Interfaces Effects of Antimony Near SiO 2 /SiC Interfaces P.M. Mooney, A.F. Basile, and Zenan Jiang Simon Fraser University, Burnaby, BC, V5A1S6, Canada and Yongju Zheng, Tamara Isaacs-Smith Smith, Aaron Modic, and

More information

Schottky Rectifiers Zheng Yang (ERF 3017,

Schottky Rectifiers Zheng Yang (ERF 3017, ECE442 Power Semiconductor Devices and Integrated Circuits Schottky Rectifiers Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Schottky Rectifier Structure 2 Metal-Semiconductor Contact The work function

More information

! CMOS Process Enhancements. ! Semiconductor Physics. " Band gaps. " Field Effects. ! MOS Physics. " Cut-off. " Depletion.

! CMOS Process Enhancements. ! Semiconductor Physics.  Band gaps.  Field Effects. ! MOS Physics.  Cut-off.  Depletion. ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 9, 019 MOS Transistor Theory, MOS Model Lecture Outline CMOS Process Enhancements Semiconductor Physics Band gaps Field Effects

More information

Engineering 2000 Chapter 8 Semiconductors. ENG2000: R.I. Hornsey Semi: 1

Engineering 2000 Chapter 8 Semiconductors. ENG2000: R.I. Hornsey Semi: 1 Engineering 2000 Chapter 8 Semiconductors ENG2000: R.I. Hornsey Semi: 1 Overview We need to know the electrical properties of Si To do this, we must also draw on some of the physical properties and we

More information

PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS

PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS Tennessee Technological University Wednesday, October 30, 013 1 Introduction Chapter 4: we considered the

More information

2. Point Defects. R. Krause-Rehberg

2. Point Defects. R. Krause-Rehberg R. Krause-Rehberg 2. Point Defects (F-center in acl) 2.1 Introduction 2.2 Classification 2.3 otation 2.4 Examples 2.5 Peculiarities in Semiconductors 2.6 Determination of Structure and Concentration 2.7

More information

8.1 Drift diffusion model

8.1 Drift diffusion model 8.1 Drift diffusion model Advanced theory 1 Basic Semiconductor Equations The fundamentals of semiconductor physic are well described by tools of quantum mechanic. This point of view gives us a model of

More information

ECE 340 Lecture 39 : MOS Capacitor II

ECE 340 Lecture 39 : MOS Capacitor II ECE 340 Lecture 39 : MOS Capacitor II Class Outline: Effects of Real Surfaces Threshold Voltage MOS Capacitance-Voltage Analysis Things you should know when you leave Key Questions What are the effects

More information

Lecture 7 - Carrier Drift and Diffusion (cont.) February 20, Non-uniformly doped semiconductor in thermal equilibrium

Lecture 7 - Carrier Drift and Diffusion (cont.) February 20, Non-uniformly doped semiconductor in thermal equilibrium 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 7-1 Lecture 7 - Carrier Drift and Diffusion (cont.) February 20, 2007 Contents: 1. Non-uniformly doped semiconductor in thermal equilibrium

More information

Ion implantation Campbell, Chapter 5

Ion implantation Campbell, Chapter 5 Ion implantation Campbell, Chapter 5 background why ion implant? elastic collisions nuclear and electronic stopping ion ranges: projected and lateral channeling ion-induced damage and amorphization basic

More information

Charge Carriers in Semiconductor

Charge Carriers in Semiconductor Charge Carriers in Semiconductor To understand PN junction s IV characteristics, it is important to understand charge carriers behavior in solids, how to modify carrier densities, and different mechanisms

More information

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors. Fabrication of semiconductor sensor

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors. Fabrication of semiconductor sensor Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Fabrication of semiconductor sensor

More information

Electrical Characteristics of MOS Devices

Electrical Characteristics of MOS Devices Electrical Characteristics of MOS Devices The MOS Capacitor Voltage components Accumulation, Depletion, Inversion Modes Effect of channel bias and substrate bias Effect of gate oide charges Threshold-voltage

More information

Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor

Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Lecture 15 OUTLINE MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Electrostatics t ti Charge vs. voltage characteristic Reading: Chapter 6.1 6.2.1 EE105 Fall 2007

More information

Semiconductors CHAPTER 3. Introduction The pn Junction with an Applied Voltage Intrinsic Semiconductors 136

Semiconductors CHAPTER 3. Introduction The pn Junction with an Applied Voltage Intrinsic Semiconductors 136 CHAPTER 3 Semiconductors Introduction 135 3.1 Intrinsic Semiconductors 136 3.2 Doped Semiconductors 139 3.3 Current Flow in Semiconductors 142 3.4 The pn Junction 148 3.5 The pn Junction with an Applied

More information

Semiconductor-Detectors

Semiconductor-Detectors Semiconductor-Detectors 1 Motivation ~ 195: Discovery that pn-- junctions can be used to detect particles. Semiconductor detectors used for energy measurements ( Germanium) Since ~ 3 years: Semiconductor

More information

Feature-level Compensation & Control. Process Integration September 15, A UC Discovery Project

Feature-level Compensation & Control. Process Integration September 15, A UC Discovery Project Feature-level Compensation & Control Process Integration September 15, 2005 A UC Discovery Project Current Milestones Si/Ge-on-insulator and Strained Si-on-insulator Substrate Engineering (M28 YII.13)

More information

VLSI Technology Dr. Nandita Dasgupta Department of Electrical Engineering Indian Institute of Technology, Madras

VLSI Technology Dr. Nandita Dasgupta Department of Electrical Engineering Indian Institute of Technology, Madras VLSI Technology Dr. Nandita Dasgupta Department of Electrical Engineering Indian Institute of Technology, Madras Lecture - 20 Ion-implantation systems and damages during implantation So, in our discussion

More information

Lecture 150 Basic IC Processes (10/10/01) Page ECE Analog Integrated Circuits and Systems P.E. Allen

Lecture 150 Basic IC Processes (10/10/01) Page ECE Analog Integrated Circuits and Systems P.E. Allen Lecture 150 Basic IC Processes (10/10/01) Page 1501 LECTURE 150 BASIC IC PROCESSES (READING: TextSec. 2.2) INTRODUCTION Objective The objective of this presentation is: 1.) Introduce the fabrication of

More information

ION IMPLANTATION - Chapter 8 Basic Concepts

ION IMPLANTATION - Chapter 8 Basic Concepts ION IMPLANTATION - Chapter 8 Basic Concepts Ion implantation is the dominant method of doping used today. In spite of creating enormous lattice damage it is favored because: Large range of doses - 1 11

More information

Chapter 1 Overview of Semiconductor Materials and Physics

Chapter 1 Overview of Semiconductor Materials and Physics Chapter 1 Overview of Semiconductor Materials and Physics Professor Paul K. Chu Conductivity / Resistivity of Insulators, Semiconductors, and Conductors Semiconductor Elements Period II III IV V VI 2 B

More information

Unit IV Semiconductors Engineering Physics

Unit IV Semiconductors Engineering Physics Introduction A semiconductor is a material that has a resistivity lies between that of a conductor and an insulator. The conductivity of a semiconductor material can be varied under an external electrical

More information

For the following statements, mark ( ) for true statement and (X) for wrong statement and correct it.

For the following statements, mark ( ) for true statement and (X) for wrong statement and correct it. Benha University Faculty of Engineering Shoubra Electrical Engineering Department First Year communications. Answer all the following questions Illustrate your answers with sketches when necessary. The

More information

ELECTRONIC I Lecture 1 Introduction to semiconductor. By Asst. Prof Dr. Jassim K. Hmood

ELECTRONIC I Lecture 1 Introduction to semiconductor. By Asst. Prof Dr. Jassim K. Hmood ELECTRONIC I Lecture 1 Introduction to semiconductor By Asst. Prof Dr. Jassim K. Hmood SOLID-STATE ELECTRONIC MATERIALS Electronic materials generally can be divided into three categories: insulators,

More information

Electronics The basics of semiconductor physics

Electronics The basics of semiconductor physics Electronics The basics of semiconductor physics Prof. Márta Rencz, Gergely Nagy BME DED September 16, 2013 The basic properties of semiconductors Semiconductors conductance is between that of conductors

More information

Chapter 5 MOSFET Theory for Submicron Technology

Chapter 5 MOSFET Theory for Submicron Technology Chapter 5 MOSFET Theory for Submicron Technology Short channel effects Other small geometry effects Parasitic components Velocity saturation/overshoot Hot carrier effects ** Majority of these notes are

More information

Session 6: Solid State Physics. Diode

Session 6: Solid State Physics. Diode Session 6: Solid State Physics Diode 1 Outline A B C D E F G H I J 2 Definitions / Assumptions Homojunction: the junction is between two regions of the same material Heterojunction: the junction is between

More information

CHAPTER 5 EFFECT OF GATE ELECTRODE WORK FUNCTION VARIATION ON DC AND AC PARAMETERS IN CONVENTIONAL AND JUNCTIONLESS FINFETS

CHAPTER 5 EFFECT OF GATE ELECTRODE WORK FUNCTION VARIATION ON DC AND AC PARAMETERS IN CONVENTIONAL AND JUNCTIONLESS FINFETS 98 CHAPTER 5 EFFECT OF GATE ELECTRODE WORK FUNCTION VARIATION ON DC AND AC PARAMETERS IN CONVENTIONAL AND JUNCTIONLESS FINFETS In this chapter, the effect of gate electrode work function variation on DC

More information

The Devices: MOS Transistors

The Devices: MOS Transistors The Devices: MOS Transistors References: Semiconductor Device Fundamentals, R. F. Pierret, Addison-Wesley Digital Integrated Circuits: A Design Perspective, J. Rabaey et.al. Prentice Hall NMOS Transistor

More information

High-Precision Evaluation of Ultra-Shallow Impurity Profiles by Secondary Ion Mass Spectrometry

High-Precision Evaluation of Ultra-Shallow Impurity Profiles by Secondary Ion Mass Spectrometry High-Precision Evaluation of Ultra-Shallow Impurity Profiles by Secondary Ion Mass Spectrometry Yoko Tada Kunihiro Suzuki Yuji Kataoka (Manuscript received December 28, 2009) As complementary metal oxide

More information

Current mechanisms Exam January 27, 2012

Current mechanisms Exam January 27, 2012 Current mechanisms Exam January 27, 2012 There are four mechanisms that typically cause currents to flow: thermionic emission, diffusion, drift, and tunneling. Explain briefly which kind of current mechanisms

More information

Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor

Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Lecture 15 OUTLINE MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Electrostatics Charge vs. voltage characteristic Reading: Chapter 6.1 6.2.1 EE15 Spring 28 Lecture

More information

The Intrinsic Silicon

The Intrinsic Silicon The Intrinsic ilicon Thermally generated electrons and holes Carrier concentration p i =n i ni=1.45x10 10 cm-3 @ room temp Generally: n i = 3.1X10 16 T 3/2 e -1.21/2KT cm -3 T= temperature in K o (egrees

More information

EECS130 Integrated Circuit Devices

EECS130 Integrated Circuit Devices EECS130 Integrated Circuit Devices Professor Ali Javey 9/18/2007 P Junctions Lecture 1 Reading: Chapter 5 Announcements For THIS WEEK OLY, Prof. Javey's office hours will be held on Tuesday, Sept 18 3:30-4:30

More information

Lecture 12: MOS Capacitors, transistors. Context

Lecture 12: MOS Capacitors, transistors. Context Lecture 12: MOS Capacitors, transistors Context In the last lecture, we discussed PN diodes, and the depletion layer into semiconductor surfaces. Small signal models In this lecture, we will apply those

More information

The Devices. Jan M. Rabaey

The Devices. Jan M. Rabaey The Devices Jan M. Rabaey Goal of this chapter Present intuitive understanding of device operation Introduction of basic device equations Introduction of models for manual analysis Introduction of models

More information

Semiconductor Detectors are Ionization Chambers. Detection volume with electric field Energy deposited positive and negative charge pairs

Semiconductor Detectors are Ionization Chambers. Detection volume with electric field Energy deposited positive and negative charge pairs 1 V. Semiconductor Detectors V.1. Principles Semiconductor Detectors are Ionization Chambers Detection volume with electric field Energy deposited positive and negative charge pairs Charges move in field

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006 UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm I Name: Closed book. One sheet of notes is allowed.

More information

MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University

MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University Practice Final Exam 1 Read the questions carefully Label all figures

More information

Chapter 5. Carrier Transport Phenomena

Chapter 5. Carrier Transport Phenomena Chapter 5 Carrier Transport Phenomena 1 We now study the effect of external fields (electric field, magnetic field) on semiconducting material 2 Objective Discuss drift and diffusion current densities

More information