Massachusetts Institute of Technology Department of Materials Science and Engineering

Size: px
Start display at page:

Download "Massachusetts Institute of Technology Department of Materials Science and Engineering"

Transcription

1 Massachusetts Institute of Technology Department of Materials Science and Engineering 3.05 Thermodynamics and Kinetics of Materials Fall 003 November 7, 003 We are looking at the incorporation of Al 3 into. Let s first start by writing the incorporation reaction as follows: Al 3 Al +3 + V Note that this is just one possible reaction. There are many other ways you could incorporate alumina into magnesia, creating different types of defects in each case. Now we need some real data to figure out which type of defect is most common in. According to Physical Ceramics by Chiang, et. al. the dominant defects in are Schottky defects. The reaction for the formation of Schottky defects is: null V + V with a corresponding equilibrium relationship: f K eq = V [V ]=exp G S kt We now have to account for charge neutrality, taking into consideration both the extrinsic defects (namely the impurities) and the intrinsic Schottky defects. V =[V ]+ Al Here is where I made the error. The more interesting case is to look at how the cation vacancy concentration depends on the impurity levels and temperature. However, in class I continued on from this point looking at the anion vacancies. My analysis was incorrect and will now present both solutions correctly. 1 Cation Vacancy For the cation vacancy concentration, namely V ( 1 ) K eq = V V Al, we can use the neutrality condition to get: 1 V V Al K eq =0 We can now solve this quadratic equation for V yielding:

2 1 V = Al 4 + Al +16K eq 4 This relationship gives us V but the term K eq can be rewritten to give us a better physical understanding of the solution. Since we know in PURE (with only Schottky defects), the following is true: K eq = V [V ] And from charge neutrality in the pure crystal: V =[V ] Thus, K eq = V pure Now we have a relation that relates K eq to something more physical (the cation vacancy concentration in the pure crystal). We now go back to our original problem and get: 1 V = Al + Al +16 V 4 4 pure From this we can look at the different temperature regimes to understand variation in V. High Temperature V >> Al V V pure pure Low Temperature V Al << Al V 1 pure So at high temperatures the cation vacancy concentration is dominated by the intrinsic Schottky defects and at low temperatures its dominated by the vacancy creation from the impurity addition. Anion Vacancy Now let us consider the case of the anion vacancies which I attempted to do in recitation. We can start with the same two tools, the Schottky equilibrium statement and charge neutrality. K eq = V [V ] V =[V ]+ Al This time we will solve for [V ]. ( 1 ) K eq = [V ]+ Al [V ]

3 Solving this equation for [V [V ] + 1 Al M g [V ] Keq =0 ] yields (this is where I made the error): 1 [V ]= Al M g + Al +16K eq 4 4 Using the same a similar substitution as in the previous case, we can eliminate K eq (K eq =[V. ] pure 1 [V ]= Al 4 M 4 g + Al +16[V ] pure Again, let s look at the limits at high and low temperature: High Temperature [V ] pure >> Al [ [V ] ] [V ] pure Low Temerature [V << Al [V ] 0 ] pure M g This makes sense since at low temperatures there are very few intrinsic defects and the only contributions to the concentration of anion vacancies can come from the incorporation of the impurity. However, no oxygen vacancies are created when alumina is added. Please come see me if this explanation is not clear. Again I would like to thank those people who brought this error to my attention and I am very sorry for any confusion my mistakes might have caused.

4 5. Find an expression for the steady-state concentration profile during the radial diffusion of a diffusant through a cylindrical shell of thickness, R, and inner radius,, in which the diffusivity is a function of radius D(r). The boundary conditions are c(r = )=c in and c( r = + R) =c out. Solution. The gradient operator in cylindrical coordinates is 1 = ê r + ê θ + ê z (5.8) r r θ z The divergence of a flux J in cylindrical coordinates is J = 1 (rj r) 1 J θ + + J z r r r θ z (5.83) Therefore, the steady-state, radially symmetric, diffusion equation becomes ( c ) 0= rd(r) (5.84) r r

5 which can be integrated twice to give r dρ c(r) = c in + a 1 (5.85) ρd(ρ) The integration constant a 1 is determined by the boundary condition at + R: a 1 = out c c in + R dρ ρd(ρ) (5.86) 5.3 Find the steady-state concentration profile during the radial diffusion of a diffusant through a bilayer cylindrical shell of inner radius,, where each layer has thickness R/ and the constant diffusivities in the inner and outer layers are D in and D out. The boundary conditions are c(r = ) = c in and c( r = + R) =c out. Will the total diffusion current through the cylinder be the same if the materials which make up the inner and outer shells are exchanged? Assume that the concentration of the diffusant is the same in the inner and outer layers at the bilayer interface. Solution. The concentration profile at the bilayer interface will not have continuous derivatives. Break the problem up into separate diffusion problems in each layer and then impose the continuity of flux at the interface. Let the concentration at the bilayer interface be c. Inner region: r + R Using Eq. 5.86, c in (r) = ( c c in The flux at the bilayer interface is + R/ ) R r in + c in (5.87) J = D in ( c c in 1 ) (5.88) + R/ + R/ R r uter region: + + R out c out c r c (r) = R in + R/ + c ; (5.89) + R + R/ The flux at the bilayer interface is J c out c = D out 1 + R/ + R + R/ (5.90) Setting the fluxes at the interfaces equal and solving for c : c = in in α out c out + α c αout + α in (5.91)

6 where D α out ( out ) ; α in ( D in ) + R + R/ (5.9) + R/ Putting Eq into Eqs and 5.89 yields the concentration profile of the whole cylinder. The total current diffusing through the cylinder (per unit length) is ( c in I = π + R ) J = πd in c (5.93) + R/ Using Eq. 5.91, α out c out c in c c in = (5.94) α out + α in If everything is kept constant except D in and D out,use of Eq in Eq shows that D in D out I (5.95) α 1 D out + α D in where α 1 and α are constants. Clearly, I will be different if the materials making up the inner and outer shells are exchanged and the values of D out and D in are therefore exchanged. This contrasts with the result for the two adjoining flat slabs in Exercise 5.1.

Problem Solving 3: Calculating the Electric Field of Highly Symmetric Distributions of Charge Using Gauss s Law

Problem Solving 3: Calculating the Electric Field of Highly Symmetric Distributions of Charge Using Gauss s Law MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department of Physics Problem Solving 3: Calculating the Electric Field of Highly Symmetric Distributions of Charge Using Gauss s Law REFERENCE: Section 4.2, 8.02

More information

5. Defects Thermal defects Planar defects Linear defects Point defects stochiometric compounds Schottky defects Anti-Schottky defects

5. Defects Thermal defects Planar defects Linear defects Point defects stochiometric compounds Schottky defects Anti-Schottky defects 5. Defects According to the third law of thermodynamics, only in 0[K] crystal's entropy can reach its minimum. As a consequence, if the temperature is higher than 0[K] there must be imperfections in the

More information

Introduction into defect studies. in ceramic materials(iii) Structure, Defects and Defect Chemistry. Z. Wang. January 18, 2002

Introduction into defect studies. in ceramic materials(iii) Structure, Defects and Defect Chemistry. Z. Wang. January 18, 2002 Introduction into defect studies in ceramic materials(iii) Structure, Defects and Defect Chemistry Z. Wang January 18, 2002 1. Mass, Charge and Site Balance The Schottky reactions for NaCl and MgO, respectively,

More information

Topics to discuss...

Topics to discuss... MME 467: Ceramics for Advanced Applications Lecture 18 Defects in Ceramics 2 Ref: Barsoum, Fundamentals of Ceramics, Ch6, McGraw-Hill, 2000 Prof. A. K. M. B. Rashid Department of MME, BUET, Dhaka Topics

More information

Electrons, Holes, and Defect ionization

Electrons, Holes, and Defect ionization Electrons, Holes, and Defect ionization The process of forming intrinsic electron-hole pairs is excitation a cross the band gap ( formation energy ). intrinsic electronic reaction : null e + h When electrons

More information

Chemical Reaction between Solids x 2 = Kt

Chemical Reaction between Solids x 2 = Kt 2-2.1.2 Chemical Reaction between Solids The simplest system involves the reaction between two solid phases, A and B, to produce a solid solution C, A and B are commonly elements for metallic systems,

More information

Table of Contents. Foreword... Introduction...

Table of Contents. Foreword... Introduction... Table of Contents Foreword.... Introduction.... xi xiii Chapter 1. Fundamentals of Heat Transfer... 1 1.1. Introduction... 1 1.2. A review of the principal modes of heat transfer... 1 1.2.1. Diffusion...

More information

AP Physics C. Gauss s Law. Free Response Problems

AP Physics C. Gauss s Law. Free Response Problems AP Physics Gauss s Law Free Response Problems 1. A flat sheet of glass of area 0.4 m 2 is placed in a uniform electric field E = 500 N/. The normal line to the sheet makes an angle θ = 60 ẘith the electric

More information

Chapter 4. Electrostatic Fields in Matter

Chapter 4. Electrostatic Fields in Matter Chapter 4. Electrostatic Fields in Matter 4.1. Polarization 4.2. The Field of a Polarized Object 4.3. The Electric Displacement 4.4. Linear Dielectrics 4.5. Energy in dielectric systems 4.6. Forces on

More information

Chapter 21 Chapter 23 Gauss Law. Copyright 2014 John Wiley & Sons, Inc. All rights reserved.

Chapter 21 Chapter 23 Gauss Law. Copyright 2014 John Wiley & Sons, Inc. All rights reserved. Chapter 21 Chapter 23 Gauss Law Copyright 23-1 What is Physics? Gauss law relates the electric fields at points on a (closed) Gaussian surface to the net charge enclosed by that surface. Gauss law considers

More information

Chemical Reaction Engineering Prof. Jayant Modak Department of Chemical Engineering Indian Institute of Science, Bangalore

Chemical Reaction Engineering Prof. Jayant Modak Department of Chemical Engineering Indian Institute of Science, Bangalore Chemical Reaction Engineering Prof. Jayant Modak Department of Chemical Engineering Indian Institute of Science, Bangalore Lecture No. # 26 Problem solving : Heterogeneous reactions Friends, in last few

More information

Volumes of Solids of Revolution. We revolve this curve about the x-axis and create a solid of revolution.

Volumes of Solids of Revolution. We revolve this curve about the x-axis and create a solid of revolution. Volumes of Solids of Revolution Consider the function ( ) from a = to b = 9. 5 6 7 8 9 We revolve this curve about the x-axis and create a solid of revolution. - 5 6 7 8 9 - - - We want to find the volume

More information

Today we begin the first technical topic related directly to the course that is: Equilibrium Carrier Concentration.

Today we begin the first technical topic related directly to the course that is: Equilibrium Carrier Concentration. Solid State Devices Dr. S. Karmalkar Department of Electronics and Communication Engineering Indian Institute of Technology, Madras Lecture - 3 Equilibrium and Carrier Concentration Today we begin the

More information

E. not enough information given to decide

E. not enough information given to decide Q22.1 A spherical Gaussian surface (#1) encloses and is centered on a point charge +q. A second spherical Gaussian surface (#2) of the same size also encloses the charge but is not centered on it. Compared

More information

Chapter 22 Gauss s Law. Copyright 2009 Pearson Education, Inc.

Chapter 22 Gauss s Law. Copyright 2009 Pearson Education, Inc. Chapter 22 Gauss s Law 22-1 Electric Flux Electric flux: Electric flux through an area is proportional to the total number of field lines crossing the area. 22-1 Electric Flux Example 22-1: Electric flux.

More information

Transient Heat Conduction in a Circular Cylinder

Transient Heat Conduction in a Circular Cylinder Transient Heat Conduction in a Circular Cylinder The purely radial 2-D heat equation will be solved in cylindrical coordinates using variation of parameters. Assuming radial symmetry the solution is represented

More information

Chapter 22 Gauss s Law. Copyright 2009 Pearson Education, Inc.

Chapter 22 Gauss s Law. Copyright 2009 Pearson Education, Inc. Chapter 22 Gauss s Law Electric Flux Gauss s Law Units of Chapter 22 Applications of Gauss s Law Experimental Basis of Gauss s and Coulomb s Laws 22-1 Electric Flux Electric flux: Electric flux through

More information

Phys102 Second Major-181 Zero Version Coordinator: Kunwar, S Monday, November 19, 2018 Page: 1

Phys102 Second Major-181 Zero Version Coordinator: Kunwar, S Monday, November 19, 2018 Page: 1 Coordinator: Kunwar, S Monday, November 19, 2018 Page: 1 Q1. A neutral metal ball is suspended by a vertical string. When a positively charged insulating rod is placed near the ball (without touching),

More information

One dimensional steady state diffusion, with and without source. Effective transfer coefficients

One dimensional steady state diffusion, with and without source. Effective transfer coefficients One dimensional steady state diffusion, with and without source. Effective transfer coefficients 2 mars 207 For steady state situations t = 0) and if convection is not present or negligible the transport

More information

CHAPTER 4 IMPERFECTIONS IN SOLIDS PROBLEM SOLUTIONS

CHAPTER 4 IMPERFECTIONS IN SOLIDS PROBLEM SOLUTIONS 4-1 CHAPTER 4 IMPERFECTIONS IN SOLIDS PROBLEM SOLUTIONS Vacancies and Self-Interstitials 4.1 In order to compute the fraction of atom sites that are vacant in copper at 1357 K, we must employ Equation

More information

Slowing down the neutrons

Slowing down the neutrons Slowing down the neutrons Clearly, an obvious way to make a reactor work, and to make use of this characteristic of the 3 U(n,f) cross-section, is to slow down the fast, fission neutrons. This can be accomplished,

More information

Chapter 22. Dr. Armen Kocharian. Gauss s Law Lecture 4

Chapter 22. Dr. Armen Kocharian. Gauss s Law Lecture 4 Chapter 22 Dr. Armen Kocharian Gauss s Law Lecture 4 Field Due to a Plane of Charge E must be perpendicular to the plane and must have the same magnitude at all points equidistant from the plane Choose

More information

Chapter 24. Gauss s Law

Chapter 24. Gauss s Law Chapter 24 Gauss s Law Let s return to the field lines and consider the flux through a surface. The number of lines per unit area is proportional to the magnitude of the electric field. This means that

More information

Homework 4 PHYS 212 Dr. Amir

Homework 4 PHYS 212 Dr. Amir Homework 4 PHYS Dr. Amir. (I) A uniform electric field of magnitude 5.8 passes through a circle of radius 3 cm. What is the electric flux through the circle when its face is (a) perpendicular to the field

More information

University of Rome Tor Vergata

University of Rome Tor Vergata University of Rome Tor Vergata Faculty of Engineering Department of Industrial Engineering THERMODYNAMIC AND HEAT TRANSFER HEAT TRANSFER dr. G. Bovesecchi gianluigi.bovesecchi@gmail.com 06-7259-727 (7249)

More information

HEAT TRANSFER 1 INTRODUCTION AND BASIC CONCEPTS 5 2 CONDUCTION

HEAT TRANSFER 1 INTRODUCTION AND BASIC CONCEPTS 5 2 CONDUCTION HEAT TRANSFER 1 INTRODUCTION AND BASIC CONCEPTS 5 2 CONDUCTION 11 Fourier s Law of Heat Conduction, General Conduction Equation Based on Cartesian Coordinates, Heat Transfer Through a Wall, Composite Wall

More information

Chapter 23: Gauss Law. PHY2049: Chapter 23 1

Chapter 23: Gauss Law. PHY2049: Chapter 23 1 Chapter 23: Gauss Law PHY2049: Chapter 23 1 Two Equivalent Laws for Electricity Coulomb s Law equivalent Gauss Law Derivation given in Sec. 23-5 (Read!) Not derived in this book (Requires vector calculus)

More information

4. CHEMICAL EQUILIBRIUM

4. CHEMICAL EQUILIBRIUM 4. CHEMICL EQUILIBRIUM Must deal with systems containing more than one species (i.e., a mixture). How do concentrations of species adjust at equilibrium? Non reacting mixture : Ni, Fe, Cr (steal) O 2,

More information

Chapter 23. Gauss Law. Copyright 2014 John Wiley & Sons, Inc. All rights reserved.

Chapter 23. Gauss Law. Copyright 2014 John Wiley & Sons, Inc. All rights reserved. Chapter 23 Gauss Law Copyright 23-1 Electric Flux Electric field vectors and field lines pierce an imaginary, spherical Gaussian surface that encloses a particle with charge +Q. Now the enclosed particle

More information

collisions of electrons. In semiconductor, in certain temperature ranges the conductivity increases rapidly by increasing temperature

collisions of electrons. In semiconductor, in certain temperature ranges the conductivity increases rapidly by increasing temperature 1.9. Temperature Dependence of Semiconductor Conductivity Such dependence is one most important in semiconductor. In metals, Conductivity decreases by increasing temperature due to greater frequency of

More information

Electricity & Magnetism Lecture 4: Gauss Law

Electricity & Magnetism Lecture 4: Gauss Law Electricity & Magnetism Lecture 4: Gauss Law Today s Concepts: A) Conductors B) Using Gauss Law Electricity & Magne/sm Lecture 4, Slide 1 Another question... whats the applica=on to real life? Stuff you

More information

Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science Electric Machines

Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science Electric Machines Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science 6.685 Electric Machines Problem Set 10 Issued November 11, 2013 Due November 20, 2013 Problem 1: Permanent

More information

Physics 114 Exam 1 Fall 2016

Physics 114 Exam 1 Fall 2016 Physics 114 Exam 1 Fall 2016 Name: For grading purposes (do not write here): Question 1. 1. 2. 2. 3. 3. Problem Answer each of the following questions and each of the problems. Points for each question

More information

ECE 250 Electronic Devices 1. Electronic Device Modeling

ECE 250 Electronic Devices 1. Electronic Device Modeling ECE 250 Electronic Devices 1 ECE 250 Electronic Device Modeling ECE 250 Electronic Devices 2 Introduction to Semiconductor Physics You should really take a semiconductor device physics course. We can only

More information

(a) What are the probabilities associated with finding the different allowed values of the z-component of the spin after time T?

(a) What are the probabilities associated with finding the different allowed values of the z-component of the spin after time T? 1. Quantum Mechanics (Fall 2002) A Stern-Gerlach apparatus is adjusted so that the z-component of the spin of an electron (spin-1/2) transmitted through it is /2. A uniform magnetic field in the x-direction

More information

Flux. Flux = = va. This is the same as asking What is the flux of water through the rectangle? The answer depends on:

Flux. Flux = = va. This is the same as asking What is the flux of water through the rectangle? The answer depends on: Ch. 22: Gauss s Law Gauss s law is an alternative description of Coulomb s law that allows for an easier method of determining the electric field for situations where the charge distribution contains symmetry.

More information

1 One-Dimensional, Steady-State Conduction

1 One-Dimensional, Steady-State Conduction 1 One-Dimensional, Steady-State Conduction 1.1 Conduction Heat Transfer 1.1.1 Introduction Thermodynamics defines heat as a transfer of energy across the boundary of a system as a result of a temperature

More information

Version: A. Earth s gravitational field g = 9.81 N/kg Mass of a Proton m p = kg

Version: A. Earth s gravitational field g = 9.81 N/kg Mass of a Proton m p = kg PHYS 2212 G & J Quiz and Exam Formulæ & Constants Fall 2017 Fundamental Charge e = 1.602 10 19 C Mass of an Electron m e = 9.109 10 31 kg Earth s gravitational field g = 9.81 N/kg Mass of a Proton m p

More information

Oxide growth model. Known as the Deal-Grove or linear-parabolic model

Oxide growth model. Known as the Deal-Grove or linear-parabolic model Oxide growth model Known as the Deal-Grove or linear-parabolic model Important elements of the model: Gas molecules (oxygen or water) are incident on the surface of the wafer. Molecules diffuse through

More information

VU Mobile Powered by S NO Group All Rights Reserved S NO Group 2012

VU Mobile Powered by S NO Group All Rights Reserved S NO Group 2012 PHY101 Physics Final Term Solved MCQs (Latest) 1 1. A total charge of 6.3 10 8 C is distributed uniformly throughout a 2.7-cm radius sphere. The volume charge density is: A. 3.7 10 7 C/m3 B. 6.9 10 6 C/m3

More information

V. Electrostatics Lecture 24: Diffuse Charge in Electrolytes

V. Electrostatics Lecture 24: Diffuse Charge in Electrolytes V. Electrostatics Lecture 24: Diffuse Charge in Electrolytes MIT Student 1. Poisson-Nernst-Planck Equations The Nernst-Planck Equation is a conservation of mass equation that describes the influence of

More information

Chapter 23 Term083 Term082

Chapter 23 Term083 Term082 Chapter 23 Term083 Q6. Consider two large oppositely charged parallel metal plates, placed close to each other. The plates are square with sides L and carry charges Q and Q. The magnitude of the electric

More information

Effective masses in semiconductors

Effective masses in semiconductors Effective masses in semiconductors The effective mass is defined as: In a solid, the electron (hole) effective mass represents how electrons move in an applied field. The effective mass reflects the inverse

More information

Physics 208, Spring 2015 Exam #1

Physics 208, Spring 2015 Exam #1 Physics 208, Spring 2015 Exam #1 A Name (Last, First): ID #: Section #: You have 75 minutes to complete the exam. Formulae are provided on a separate colored sheet. You may NOT use any other formula sheet.

More information

3. Consider a semiconductor. The concentration of electrons, n, in the conduction band is given by

3. Consider a semiconductor. The concentration of electrons, n, in the conduction band is given by Colloqium problems to chapter 13 1. What is meant by an intrinsic semiconductor? n = p All the electrons are originating from thermal excitation from the valence band for an intrinsic semiconductor. Then

More information

Question Answer Marks Guidance 1 (a) (i)

Question Answer Marks Guidance 1 (a) (i) 1 (a) (i) Fe + (g) + 2I(g) + e Fe2+ (g) + 2I- (g) Correct species AND state symbols required for each marks ALLOW e for e Fe(g) + 2I(g) TAKE CARE: In top left box, e may be in centre of response and more

More information

EE301 Electronics I , Fall

EE301 Electronics I , Fall EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials

More information

Ch. 2: Energy Bands And Charge Carriers In Semiconductors

Ch. 2: Energy Bands And Charge Carriers In Semiconductors Ch. 2: Energy Bands And Charge Carriers In Semiconductors Discrete energy levels arise from balance of attraction force between electrons and nucleus and repulsion force between electrons each electron

More information

Physics 114 Exam 1 Spring 2013

Physics 114 Exam 1 Spring 2013 Physics 114 Exam 1 Spring 2013 Name: For grading purposes (do not write here): Question 1. 1. 2. 2. 3. 3. Problem Answer each of the following questions and each of the problems. Points for each question

More information

Model Building An Introduction to Atomistic Simulation

Model Building An Introduction to Atomistic Simulation Materials and Modelling MPhil 2006-07 COURSE MP3: MONTE CARLO AND MOLECULAR DYNAMICS COMPUTING CLASS 1 Model Building An Introduction to Atomistic Simulation Wednesday 22 nd November 2006 14.00 16.00 1

More information

Ph.D. QUALIFYING EXAMINATION PART A. Tuesday, January 3, 2012, 1:00 5:00 P.M.

Ph.D. QUALIFYING EXAMINATION PART A. Tuesday, January 3, 2012, 1:00 5:00 P.M. PhD QUALIFYING EXAMINATION PART A Tuesday, January 3, 212, 1: 5: PM Work each problem on a separate sheet(s) of paper and put your identifying number on each page Do not use your name Each problem has

More information

Lecture D Steady State Heat Conduction in Cylindrical Geometry

Lecture D Steady State Heat Conduction in Cylindrical Geometry Conduction and Convection Heat Transfer Prof. S.K. Som Prof. Suman Chakraborty Department of Mechanical Engineering Indian Institute of Technology Kharagpur Lecture - 08 1D Steady State Heat Conduction

More information

Interphase Mass Transfer see Handout. At equilibrium a species will distribute (or partition ) between two phases.

Interphase Mass Transfer see Handout. At equilibrium a species will distribute (or partition ) between two phases. Interphase Mass Transfer see Handout At equilibrium a species will distribute (or partition ) between two phases. Examples: 1. oxygen (species) will partition between air (gas phase) and water (liquid

More information

Math Review for Exam Compute the second degree Taylor polynomials about (0, 0) of the following functions: (a) f(x, y) = e 2x 3y.

Math Review for Exam Compute the second degree Taylor polynomials about (0, 0) of the following functions: (a) f(x, y) = e 2x 3y. Math 35 - Review for Exam 1. Compute the second degree Taylor polynomial of f e x+3y about (, ). Solution. A computation shows that f x(, ), f y(, ) 3, f xx(, ) 4, f yy(, ) 9, f xy(, ) 6. The second degree

More information

Name(s) with Lab section in Group. How do we use the model of the electronic structure of the atom to understand periodic trends of the elements?

Name(s) with Lab section in Group. How do we use the model of the electronic structure of the atom to understand periodic trends of the elements? Chem 1314 Sections 14 and 15 Periodicity Laboratory Fall 2004 Monday, November 22, 2004 Name(s) with Lab section in Group How do we use the model of the electronic structure of the atom to understand periodic

More information

Gauss s Law. Name. I. The Law: , where ɛ 0 = C 2 (N?m 2

Gauss s Law. Name. I. The Law: , where ɛ 0 = C 2 (N?m 2 Name Gauss s Law I. The Law:, where ɛ 0 = 8.8510 12 C 2 (N?m 2 1. Consider a point charge q in three-dimensional space. Symmetry requires the electric field to point directly away from the charge in all

More information

Quick Questions. 1. Two charges of +1 µc each are separated by 1 cm. What is the force between them?

Quick Questions. 1. Two charges of +1 µc each are separated by 1 cm. What is the force between them? 92 3.10 Quick Questions 3.10 Quick Questions 1. Two charges of +1 µc each are separated by 1 cm. What is the force between them? 0.89 N 90 N 173 N 15 N 2. The electric field inside an isolated conductor

More information

Exam 1 Solution. Solution: Make a table showing the components of each of the forces and then add the components. F on 4 by 3 k(1µc)(2µc)/(4cm) 2 0

Exam 1 Solution. Solution: Make a table showing the components of each of the forces and then add the components. F on 4 by 3 k(1µc)(2µc)/(4cm) 2 0 PHY2049 Fall 2010 Profs. S. Hershfield, A. Petkova Exam 1 Solution 1. Four charges are placed at the corners of a rectangle as shown in the figure. If Q 1 = 1µC, Q 2 = 2µC, Q 3 = 1µC, and Q 4 = 2µC, what

More information

Problem Solving 1: The Mathematics of 8.02 Part I. Coordinate Systems

Problem Solving 1: The Mathematics of 8.02 Part I. Coordinate Systems Problem Solving 1: The Mathematics of 8.02 Part I. Coordinate Systems In 8.02 we regularly use three different coordinate systems: rectangular (Cartesian), cylindrical and spherical. In order to become

More information

MAGNETIC NOZZLE PLASMA EXHAUST SIMULATION FOR THE VASIMR ADVANCED PROPULSION CONCEPT

MAGNETIC NOZZLE PLASMA EXHAUST SIMULATION FOR THE VASIMR ADVANCED PROPULSION CONCEPT MAGNETIC NOZZLE PLASMA EXHAUST SIMULATION FOR THE VASIMR ADVANCED PROPULSION CONCEPT ABSTRACT A. G. Tarditi and J. V. Shebalin Advanced Space Propulsion Laboratory NASA Johnson Space Center Houston, TX

More information

Electrical Conduction in Ceramic Materials 1 Ref: Barsoum, Fundamentals of Ceramics, Ch7, McGraw-Hill, 2000

Electrical Conduction in Ceramic Materials 1 Ref: Barsoum, Fundamentals of Ceramics, Ch7, McGraw-Hill, 2000 MME 467 Ceramics for Advanced Applications Lecture 19 Electrical Conduction in Ceramic Materials 1 Ref: Barsoum, Fundamentals of Ceramics, Ch7, McGraw-Hill, 2000 Prof. A. K. M. B. Rashid Department of

More information

Semiconductors. Semiconductors also can collect and generate photons, so they are important in optoelectronic or photonic applications.

Semiconductors. Semiconductors also can collect and generate photons, so they are important in optoelectronic or photonic applications. Semiconductors Semiconducting materials have electrical properties that fall between true conductors, (like metals) which are always highly conducting and insulators (like glass or plastic or common ceramics)

More information

Unit II Thermal Physics Introduction- Modes of Heat Transfer Normally there are three modes of transfer of heat from one place to another viz., conduction, convection and radiation. Conduction : Conduction

More information

HEAT CONDUCTION USING GREEN S FUNCTIONS

HEAT CONDUCTION USING GREEN S FUNCTIONS HEAT CONDUCTION USING GREEN S FUNCTIONS Preface to the first edition Preface to the second edition Author Biographies Nomenclature TABLE OF CONTENTS FOR SECOND EDITION December 2009 Page viii x xii xiii

More information

INTRODUCTION TO THE DEFECT STATE IN MATERIALS

INTRODUCTION TO THE DEFECT STATE IN MATERIALS INTRODUCTION TO THE DEFECT STATE IN MATERIALS DEFECTS, DEFECTS, DEFECTS CAN T LIVE WITH THEM!!! CAN T LIVE WITHOUT THEM!!! INTRODUCTION TO DEFECT STATE IN MATERIALS DEFECTS, DEFECTS, DEFECTS Perfect crystals

More information

Potential & Potential Energy

Potential & Potential Energy Potential & Potential Energy Lecture 10: Electromagnetic Theory Professor D. K. Ghosh, Physics Department, I.I.T., Bombay Electrostatic Boundary Conditions : We had seen that electric field has a discontinuity

More information

PHYS 241 EXAM #1 October 5, 2006

PHYS 241 EXAM #1 October 5, 2006 1. ( 5 points) Two point particles, one with charge 8 10 9 C and the other with charge 2 10 9 C, are separated by 4 m. The magnitude of the electric field (in N/C) midway between them is: A. 9 10 9 B.

More information

Coordinates 2D and 3D Gauss & Stokes Theorems

Coordinates 2D and 3D Gauss & Stokes Theorems Coordinates 2 and 3 Gauss & Stokes Theorems Yi-Zen Chu 1 2 imensions In 2 dimensions, we may use Cartesian coordinates r = (x, y) and the associated infinitesimal area We may also employ polar coordinates

More information

Defects. Defects. Kap. 3 States of aggregation. Perfect Crystal

Defects. Defects. Kap. 3 States of aggregation. Perfect Crystal Kap. 3 States of aggregation Defects Perfect Crystal A A perfect crystal with every atom in the correct position does not exist. Only a hypothetical situation at 0 K Crystals are like people: it is the

More information

Electric flux. Electric Fields and Gauss s Law. Electric flux. Flux through an arbitrary surface

Electric flux. Electric Fields and Gauss s Law. Electric flux. Flux through an arbitrary surface Electric flux Electric Fields and Gauss s Law Electric flux is a measure of the number of field lines passing through a surface. The flux is the product of the magnitude of the electric field and the surface

More information

Electric Field. Electric field direction Same direction as the force on a positive charge Opposite direction to the force on an electron

Electric Field. Electric field direction Same direction as the force on a positive charge Opposite direction to the force on an electron Electric Field Electric field Space surrounding an electric charge (an energetic aura) Describes electric force Around a charged particle obeys inverse-square law Force per unit charge Electric Field Electric

More information

Nucleation rate (m -3 s -1 ) Radius of water nano droplet (Å) 1e+00 1e-64 1e-128 1e-192 1e-256

Nucleation rate (m -3 s -1 ) Radius of water nano droplet (Å) 1e+00 1e-64 1e-128 1e-192 1e-256 Supplementary Figures Nucleation rate (m -3 s -1 ) 1e+00 1e-64 1e-128 1e-192 1e-256 Calculated R in bulk water Calculated R in droplet Modified CNT 20 30 40 50 60 70 Radius of water nano droplet (Å) Supplementary

More information

Introduction. Statement of Problem. The governing equations for porous materials with Darcy s law can be written in dimensionless form as:

Introduction. Statement of Problem. The governing equations for porous materials with Darcy s law can be written in dimensionless form as: Symbolic Calculation of Free Convection for Porous Material of Quadratic Heat Generation in a Circular Cavity Kamyar Mansour Amirkabir University of technology, Tehran, Iran, 15875-4413 mansour@aut.ac.ir

More information

3. A solid conducting sphere has net charge of +6nC. At electrostatic equilibrium the electric field inside the sphere is:

3. A solid conducting sphere has net charge of +6nC. At electrostatic equilibrium the electric field inside the sphere is: Conceptual Questions. Circle the best answer. (2 points each) 1. If more electric field lines point into a balloon than come out of it, you can conclude that this balloon must contain more positive charge

More information

Defect Ch em Ch istry 1

Defect Ch em Ch istry 1 Defect Chemistry 1 What is a defect? Fundamental definition Any deviation from the perfect crystal lattice is a defect! Macroscopic defects like porosities and cracks have an overall negative influence

More information

Modified Maxwell-Garnett equation for the effective transport coefficients in inhomogeneous media

Modified Maxwell-Garnett equation for the effective transport coefficients in inhomogeneous media J. Phys. A: Math. Gen. 3 (998) 7227 7234. Printed in the UK PII: S0305-4470(98)93976-2 Modified Maxwell-Garnett equation for the effective transport coefficients in inhomogeneous media Juris Robert Kalnin

More information

Steady-state diffusion is diffusion in which the concentration of the diffusing atoms at

Steady-state diffusion is diffusion in which the concentration of the diffusing atoms at Chapter 7 What is steady state diffusion? Steady-state diffusion is diffusion in which the concentration of the diffusing atoms at any point, x, and hence the concentration gradient at x, in the solid,

More information

Chapter 2: Heat Conduction. Dr Ali Jawarneh Department of Mechanical Engineering, Hashemite University

Chapter 2: Heat Conduction. Dr Ali Jawarneh Department of Mechanical Engineering, Hashemite University Chapter : Heat Conduction Equation Dr Ali Jawarneh Department of Mechanical Engineering, Hashemite University Objectives When you finish studying this chapter, you should be able to: Understand multidimensionality

More information

Physics (

Physics ( Question 2.12: A charge of 8 mc is located at the origin. Calculate the work done in taking a small charge of 2 10 9 C from a point P (0, 0, 3 cm) to a point Q (0, 4 cm, 0), via a point R (0, 6 cm, 9 cm).

More information

Gauss s Law & Potential

Gauss s Law & Potential Gauss s Law & Potential Lecture 7: Electromagnetic Theory Professor D. K. Ghosh, Physics Department, I.I.T., Bombay Flux of an Electric Field : In this lecture we introduce Gauss s law which happens to

More information

Supporting Information for Conical Nanopores. for Efficient Ion Pumping and Desalination

Supporting Information for Conical Nanopores. for Efficient Ion Pumping and Desalination Supporting Information for Conical Nanopores for Efficient Ion Pumping and Desalination Yu Zhang, and George C. Schatz,, Center for Bio-inspired Energy Science, Northwestern University, Chicago, Illinois

More information

ECE 142: Electronic Circuits Lecture 3: Semiconductors

ECE 142: Electronic Circuits Lecture 3: Semiconductors Faculty of Engineering ECE 142: Electronic Circuits Lecture 3: Semiconductors Agenda Intrinsic Semiconductors Extrinsic Semiconductors N-type P-type Carrier Transport Drift Diffusion Semiconductors A semiconductor

More information

5 GRAVITATION Last Updated: July 16, 2012

5 GRAVITATION Last Updated: July 16, 2012 Problem List 5.1 Total mass of a shell 5.2 Tunnel through the moon 5.3 Gravitational field above the center of a thin hoop 5.4 Gravitational force near a metal-cored planet surrounded by a gaseous cloud

More information

1. Electricity and Magnetism (Fall 1995, Part 1) A metal sphere has a radius R and a charge Q.

1. Electricity and Magnetism (Fall 1995, Part 1) A metal sphere has a radius R and a charge Q. 1. Electricity and Magnetism (Fall 1995, Part 1) A metal sphere has a radius R and a charge Q. (a) Compute the electric part of the Maxwell stress tensor T ij (r) = 1 {E i E j 12 } 4π E2 δ ij both inside

More information

Electro - Principles I

Electro - Principles I Electro - Principles I Page 10-1 Atomic Theory It is necessary to know what goes on at the atomic level of a semiconductor so the characteristics of the semiconductor can be understood. In many cases a

More information

Thermodynamics 1. Lecture 7: Heat transfer Open systems. Bendiks Jan Boersma Thijs Vlugt Theo Woudstra. March 1, 2010.

Thermodynamics 1. Lecture 7: Heat transfer Open systems. Bendiks Jan Boersma Thijs Vlugt Theo Woudstra. March 1, 2010. hermodynamics Lecture 7: Heat transfer Open systems Bendiks Jan Boersma hijs Vlugt heo Woudstra March, 00 Energy echnology Summary lecture 6 Poisson relation efficiency of a two-stroke IC engine (Otto

More information

Lecture 13: Electromagnetic Theory Professor D. K. Ghosh, Physics Department, I.I.T., Bombay. Poisson s and Laplace s Equations

Lecture 13: Electromagnetic Theory Professor D. K. Ghosh, Physics Department, I.I.T., Bombay. Poisson s and Laplace s Equations Poisson s and Laplace s Equations Lecture 13: Electromagnetic Theory Professor D. K. Ghosh, Physics Department, I.I.T., Bombay We will spend some time in looking at the mathematical foundations of electrostatics.

More information

Physics 202, Lecture 3. The Electric Field

Physics 202, Lecture 3. The Electric Field Physics 202, Lecture 3 Today s Topics Electric Field (Review) Motion of charged particles in external E field Conductors in Electrostatic Equilibrium (Ch. 21.9) Gauss s Law (Ch. 22) Reminder: HW #1 due

More information

Introduction to Semiconductor Physics. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India

Introduction to Semiconductor Physics. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India Introduction to Semiconductor Physics 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India http://folk.uio.no/ravi/cmp2013 Review of Semiconductor Physics Semiconductor fundamentals

More information

Prototype Instabilities

Prototype Instabilities Prototype Instabilities David Randall Introduction Broadly speaking, a growing atmospheric disturbance can draw its kinetic energy from two possible sources: the kinetic and available potential energies

More information

Review: Conduction. Breaking News

Review: Conduction. Breaking News CH EN 3453 Heat Transfer Review: Conduction Breaking News No more homework (yay!) Final project reports due today by 8:00 PM Email PDF version to report@chen3453.com Review grading rubric on Project page

More information

UNIVERSITY OF MISSOURI-COLUMBIA PHYSICS DEPARTMENT. PART I Qualifying Examination. January 20, 2015, 5:00 p.m. to 8:00 p.m.

UNIVERSITY OF MISSOURI-COLUMBIA PHYSICS DEPARTMENT. PART I Qualifying Examination. January 20, 2015, 5:00 p.m. to 8:00 p.m. UNIVERSITY OF MISSOURI-COLUMBIA PHYSICS DEPARTMENT PART I Qualifying Examination January 20, 2015, 5:00 p.m. to 8:00 p.m. Instructions: The only material you are allowed in the examination room is a writing

More information

Symmetry in Monte Carlo. Dennis Mennerdahl OECD/NEA/NSC/WPNCS/AMCT EG, Paris, 18 September 2014

Symmetry in Monte Carlo. Dennis Mennerdahl OECD/NEA/NSC/WPNCS/AMCT EG, Paris, 18 September 2014 Symmetry in Monte Carlo Dennis Mennerdahl OECD/NEA/NSC/WPNCS/AMCT EG, Paris, 18 September 2014 OVERVIEW Identical events - Full model results contain everything and more Symmetry to improve convergence?

More information

Collision Rates, Mean Free Path, and Diffusion. Chemistry B

Collision Rates, Mean Free Path, and Diffusion. Chemistry B Collision Rates, Mean Free Path, and Diffusion Chemistry 8-23B David Ronis McGill University In the previous section, we found the parameter b by computing the average force exerted on the walls of the

More information

Stabilization of sawteeth in tokamaks with toroidal flows

Stabilization of sawteeth in tokamaks with toroidal flows PHYSICS OF PLASMAS VOLUME 9, NUMBER 7 JULY 2002 Stabilization of sawteeth in tokamaks with toroidal flows Robert G. Kleva and Parvez N. Guzdar Institute for Plasma Research, University of Maryland, College

More information

Q ( q(m, t 0 ) n) S t.

Q ( q(m, t 0 ) n) S t. THE HEAT EQUATION The main equations that we will be dealing with are the heat equation, the wave equation, and the potential equation. We use simple physical principles to show how these equations are

More information

Plasma Physics Prof. V. K. Tripathi Department of Physics Indian Institute of Technology, Delhi

Plasma Physics Prof. V. K. Tripathi Department of Physics Indian Institute of Technology, Delhi Plasma Physics Prof. V. K. Tripathi Department of Physics Indian Institute of Technology, Delhi Lecture No. # 03 DC Conductivity and Negative Differential Conductivity Well friends, in this lecture, I

More information

Thermal and Statistical Physics Department Exam Last updated November 4, L π

Thermal and Statistical Physics Department Exam Last updated November 4, L π Thermal and Statistical Physics Department Exam Last updated November 4, 013 1. a. Define the chemical potential µ. Show that two systems are in diffusive equilibrium if µ 1 =µ. You may start with F =

More information

Chapter 21: Gauss law Tuesday September 13 th. Gauss law and conductors Electrostatic potential energy (more likely on Thu.)

Chapter 21: Gauss law Tuesday September 13 th. Gauss law and conductors Electrostatic potential energy (more likely on Thu.) Chapter 21: Gauss law Tuesday September 13 th LABS START THIS WEEK Quick review of Gauss law The flux of a vector field The shell theorem Gauss law for other symmetries A uniformly charged sheet A uniformly

More information

Photoionized Gas Ionization Equilibrium

Photoionized Gas Ionization Equilibrium Photoionized Gas Ionization Equilibrium Ionization Recombination H nebulae - case A and B Strömgren spheres H + He nebulae Heavy elements, dielectronic recombination Ionization structure 1 Ionization Equilibrium

More information