UT54ACS164/UT54ACTS164 8-Bit Shift Registers January, 2018 Datasheet

Transcription

1 UT54AS164/UT54ATS164 8-Bit Shift egisters January, 2018 Datasheet The most important thing we build is trust FEATUES AND-gated (enable/disable) serial inputs Fully buffered clock and serial inputs Direct clear MOS (ATS) and 0.6 H MOS (AS) - Latchup immune High speed Low power consumption Single 5 volt supply Available QML Q or V processes Flexible package - 14-pin DIP (ATS only) - 14-lead flatpack UT54AS164 - SMD UT54ATS164 - SMD DESIPTION The UT54AS164 and the UT54ATS164 are 8-bit shift registers which feature AND-gated serial inputs and an asynchronous clear. The gated serial inputs (A and B) permit complete control over incoming data. A low at either input inhibits entry of new data and resets the first flip-flop to the low level at the next clock pulse. A high-level at both serial inputs sets the first flip-flop to the high level at the next clock pulse. Data at the serial inputs may be changed while the clock is high or low, providing the minimum setup time requirements are met. locking occurs on the low-to-high-level transition of the clock input. The devices are characterized over full military temperature range of -55 to FUNTION TABLE INPUTS OUTPUTS L LK A B Q A Q B... Q H L X X X L L... L H L X X Q A0 Q B0... Q H0 H H H H Q An... Q Gn H L X L Q An...Q Gn H X L L Q An...Q Gn PINOUTS A B Q A Q B Q Q D V SS LOGI SYMBOL (9) L (8) LK (1) A (2) B A B Q A Q B Q Q D V SS 14-Pin DIP Top View V DD Q H Q G Q F Q E L LK 14-Lead Flatpack Top View / & SG8 1D (3) (4) (5) (6) (10) (11) (12) (13) V DD Q H Q G Q F Q E L LK Q A Q B Q Q D Q E Q F Q G Q H Notes: 1. Q A0, Q B0, Q H0 = the level of Q A, Q B or Q H, respectively, before the indicated steadystate input conditions were established. 2. Q An and Q Gn = the level of Q A or Q G before the most recent transition of the clock; indicates a one-bit shift. Note: 1. Logic symbol in accordance with ANSI/IEEE Std and IE Publication obham Semiconductor Solutions

2 LOGI DIAGAM L (9) (8) LK (1) SEIAL A B (2) K K K K K K K K S S S S S S S S (3) (4) (5) (6) (10) (11) (12) (13) Q A Q B Q Q D Q E Q F Q G Q H 2 obham Semiconductor Solutions

3 OPEATIONAL ENVIONMENT 1 PAAMETE LIMIT UNITS Total Dose 1.0E6 (ATS) 500K (AS) rads(si) SEU Threshold 2 80 MeV-cm 2 /mg SEL Threshold 120 MeV-cm 2 /mg Neutron Fluence 1.0E14 n/cm 2 Notes: 1. Logic will not latchup during radiation exposure within the limits defined in the table. 2. Device storage elements are immune to SEU affects. ABSOLUTE MAXIMUM ATINGS SYMBOL PAAMETE LIMIT UNITS V DD Supply voltage -0.3 to 7.0 V V I/O Voltage any pin -.3 to V DD +.3 V T STG Storage Temperature range -65 to +150 T J Maximum junction temperature +175 T LS Lead temperature (soldering 5 seconds) +300 J Thermal resistance junction to case 15.0 /W I I D input current 10 ma P D Maximum power dissipation 1 W Note: 1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. EOMMENDED OPEATING ONDITIONS SYMBOL PAAMETE LIMIT UNITS V DD Supply voltage 4.5 to 5.5 V V IN Input voltage any pin 0 to V DD V T Temperature range -55 to obham Semiconductor Solutions

4 D ELETIAL HAATEISTIS 7 (V DD = 5.0V 10%; V SS = 0V 6, -55 < T < +125 ); Unless otherwise noted, Tc is per the temperature range ordered. SYMBOL PAAMETE ONDITION MIN MAX UNIT V IL Low-level input voltage 1 ATS AS V IH High-level input voltage 1 ATS AS 0.8 V.3V DD.5V DD V.7V DD I IN Input leakage current ATS/AS V IN = V DD or V SS -1 1 A V OL Low-level output voltage 3 ATS AS I OL = 8.0mA I OL = 100 A V V OH High-level output voltage 3 ATS AS I OH = -8.0mA I OH = -100 A.7V DD V DD V I OS Short-circuit output current 2,4 ATS/AS V O = V DD and V SS ma I OL Output current 10 (Sink) V IN = V DD or V SS V OL = 0.4V 8 ma I OH Output current 10 (Source) V IN = V DD or V SS V OH = V DD - 0.4V -8 ma P total Power dissipation 2, 8, 9 L = 50pF 1.9 mw/ MHz I DDQ Quiescent Pre-ad Supply Post-ad urrent Device Type 01 I DDQ Quiescent Supply urrent Delta ATS V IN = V DD or V SS V DD = V DD MAX For input under test V IN = V DD - 2.1V For all other inputs V IN = V DD or V SS V DD = 5.5V A 1.6 ma IN Input capacitance 5 = 0V 15 pf OUT Output capacitance 5 = 0V 15 pf 4 obham Semiconductor Solutions

5 Notes: 1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V IH = V IH (min) + 20%, - 0%; V IL = V IL (max) + 0%, - 50%, as specified herein, for TTL, MOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are guaranteed to V IH (min) and V IL (max). 2. Supplied as a design limit but not guaranteed or tested. 3. Per MIL-PF-38535, for current density 5.0E5 amps/cm 2, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765 pf/ MHz. 4. Not more than one output may be shorted at a time for maximum duration of one second. 5. apacitance measured for initial qualification and when design changes may affect the value. apacitance is measured between the designated terminal and V SS at frequency of 1MHz and a signal amplitude of 50mV rms maximum. 6. Maximum allowable relative shift equals 50mV. 7. Device type 01 is only offered with a TID tolerance guarantee of 1E6 rads(si) (ATS only), 1E5 rads(si), 3E5 rads(si), and 5E5 rads(si), and is tested in accordance with MIL-STD-883 Test Method 1019 ondition A. 8. Power does not include power contribution of any TTL output sink current 9. Power dissipation specified per switching output. 10. This value is guaranteed based on characterization data, but not tested. 5 obham Semiconductor Solutions

6 A ELETIAL HAATEISTIS 2 (V DD = 5.0V 10%; V SS = 0V 1, -55 < T < +125 ); Unless otherwise noted, Tc is per the temperature range ordered. SYMBOL PAAMETE MINIMUM MAXIMUM UNIT t PHL LK to Qn 4 21 ns t PLH LK to Qn 2 18 ns t PHL L to Qn 5 21 ns f MAX Maximum clock frequency 83 MHz t SU1 L inactive Setup time before LK 4 ns t SU2 Data setup time before LK 4 ns t H 3 Data hold time after LK 2 ns t W Minimum pulse width L low LK high LK low 6 ns Notes: 1. Maximum allowable relative shift equals 50mV. 2. Device type 01 is only offered with a TID tolerance guarantee of 1E6 rads(si) (ATS only), 1E5 rads(si), 3E5 rads(si), and 5E5 rads(si), and is tested in accordance with MIL-STD-883 Test Method 1019 ondition A. 3. Based on characterization, hold time (t H ) of 0ns can be assumed if data setup time (t SU2 ) is >10ns. This is guaranteed, but not tested. 6 obham Semiconductor Solutions

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8 PAKAGING Side-Brazed Packages 8 obham Semiconductor Solutions

9 FLATPAK PAKAGES 9 obham Semiconductor Solutions

10 UT54AS164/UT54ATS164: SMD 5962 * ***** ** * * * Lead Finish: (Notes 1 & 2) A = Solder = Gold X = Optional Package Type: X = 14-lead ceramic bottom-brazed dual-in-line Flatpack = 14-lead ceramic side-brazed dip lass Designator: Q = QML lass Q V = QML lass V Device Type: 01 = 50 to 300 rads(si)/sec Drawing Number: = UT54AS = UT54ATS164 Total Dose: (Notes 3 & 4) = 1E5 rads(si) F = 3E5 rads(si) G = 5E5 rads(si) H = 1E6 rads(si) (ATS only) Notes: 1. Lead finish (A,, or X) must be specified. 2. If an X is specified when ordering, part marking will match the lead finish and will be either A (solder) or (gold). 3. Total dose radiation must be specified when ordering. QML Q and QML V not available without radiation hardening. For prototype inquiries, contact factory. 4. Device type 01 is only offered with a TID tolerance guarantee of 1E6 rads(si) (ATS only), 1E5 rads(si), 3E5 rads(si), and 5E5 rads(si), and is tested in accordance with MIL-STD-883 Test Method 1019 ondition A. 10 obham Semiconductor Solutions

11 Aeroflex olorado Springs - Datasheet Definition Advanced Datasheet - Product In Development Preliminary Datasheet - Shipping Prototype Datasheet - Shipping QML & educed Hi-el The following United States (U.S.) Department of ommerce statement shall be applicable if these commodities, technology, or software are exported from the U.S.: These commodities, technology, or software were exported from the United States in accordnance with the Export Administration egulations. Divsion contrary to the U.S. law is prohibited. obham Semiconductor Solutions 4350 entennial Blvd olorado Springs, O E: info-ams@aeroflex.com T: Aeroflex olorado Springs Inc., dba obham Semiconductor Solutions, reserves the right to make changes to any products and services described herein at any time without notice. onsult Aeroflex or an authorized sales representative to verify that the information in this data sheet is current before using this product. Aeroflex does not assume any responsibility or liability arising out of the application or use of any product or service described herein, except as expressly agreed to in writing by Aeroflex; nor does the purchase, lease, or use of a product or service from Aeroflex convey a license under any patent rights, copyrights, trademark rights, or any other of the intellectual rights of Aeroflex or of third parties. 11 obham Semiconductor Solutions

12 DATA SHEET EVISION HISTOY evision Date Description of hange Page 4 edited IDDQ Applied new obham Data Sheet template to the document. Author 1-18 Updates to reflect current SMD T T 12 obham Semiconductor Solutions