Mixed Signal IC Design Notes set 4: Broadband Design Techniques
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1 Mixed Sal C Des Notes set 4: Broadband Des Techniques Mark odwell University of California, Santa Barbara rodwell@ece.ucsb.edu , fax
2 Gett ore bandwidth At this pot we have learned basics (MOTC etc) How can we et ore bandwidth.? esistive feedback transconductance-transipedance eitter-follower buffers, nefits and headaches eitter deeneration basics eitter deeneration and area scal ft-doubler staes.. distributed aplifiers broadband / peak with LC networks. exaples.
3 Eitter Deeneration, e Ce e Ce e Eitter deeneration was troduced us only an eitter resistance. We will fd we stead want an C cobation such that C e e C /.
4 Eitter Deeneration, 2 - C Ce e Ce e Next note that the topoloy is such that we can work with bb, C cb etc reoved, and add the back later...
5 Eitter Deeneration, 3 1 b C 2-3 e Work fro : 1 But So, and ( 1/ jωc ) (note that the frequency dependent ters cancel) Z bb jωc 2 E C 3 jωc cb /( E E 2 1/ jωc E (1 1 so ) and E ) 3 1 ( * ) etc can now added back...they dont chane E jωc Ce e
6 Eitter Deeneration, Suary Ccbx Ccbx bb Ccbi bb Ccbi C - - Ce e (1 1 C C E 1, extrsic (1 E ) ) Other eleent values do not chane...
7 Eitter Deeneration, Unbypassed eitter resistance ex C - C ex - 1, extrsic (1 E ) can shown by eleentary nodal analysis, work throuh Key observation: deeneration by this ethod results a series put resistance, which can crease C char tie.
8 Eitter Deeneration, cobation case Ccbx bb Ccbi bb Ccbx Ccbi C ex C ext - - Ce ex e C (1 C E ) 1 1, extrsic (1 E )
9 Eitter Deeneration and Area Scal 1 Consider the CS stae. f then we have a 1 C ( en bb ) C cb eitter area Ae current density Je Current Ae*Jee transconductance put capacitancec collector capacitanceccb base resistancebb we desire a [( )(1 ) ] en bb a A, ext L, ext L L,
10 Eitter Deeneration and Area Scal 2 eitter area Ae current density Je Current Ae*Jee transconductance put capacitancec collector capacitanceccb base resistancebb Ce e Bier transistor, fore deeneration eitter area kae current density Je Current kae*jeke transconductancek put capacitancekc collector capacitancekccb base resistancebb/k now deenerate: e picked such that (1e)k trsic transconductancek extrsic transconductancek/(1e) put capacitancekc/(1e)c collector capacitancekccb base resistancebb/k
11 Eitter Deeneration and Area Scal 3 Ce e We have ade the transistor K ties bier, then deenerated by K :1. We are left with the orial and C, but have creased Ccb by K :1and decreased K :1 a a 1 1 C en C en k C cb bb So, appropriate choice of Cbb [ (1 )] kc [ (1 ) ], ext Ccb, and ives the hihest bandwidth bb kc cb en L k bb (1, ext cb bb by ), ext k k exchanes delay ters associated with bb vs L en L L L
12 Eitter Deeneration and Area Scal 4: Eitter Follower Case Why iht we want to do this?
13 Eitter Deeneration and Area Scal 5: Eitter Follower Case Ccb1 1 Ccb2 L bb1 C1 bb2 C2 Consider only ters a1associated with the CE stae, bb2 a1... kccb2 out,1 k Note that the undeenerated ( 1 ) bb C bb2 L L C2 k tieconstant of an HBT, ext is several ties1/ 2πf τ, and can a ajor bandwidth liit. Area scal/deeneration as above is one ethod to address this. out,1
14 Ft-doubler staes.the Darlton evisited 1 L 1 L Q1 Q2 ee ee C1 C2 1 L bb1 bb2 ee C1 C2 ecall the iproveent Dap provided by ee. is there a larer lesson here?
15 2 Kds of Darlton: en L en L Q1 Q2 Q1 Q2 ee ee EF collector rounded Collectors tied toether f collectors are tied toether: AC collector currents of both transistors contribute to output :) Both transistor Ccb's undero Miller ultiplication :(
16 Ft-doubler staes 2 c1 out 1 - C1 e1 11 c2 ee1/ C2
17 Ft-doubler staes 3 out ee ee ee ee ee ee ee ee e e c C j C j C C C j C j C j C j C j ω ω ω ω ω ω ω / 2 / hence and 2 / 2 /...so ) ( 1/...hence / such that Choose ) (1 ) / (1 ) /(1 ) / (1,, : Work fro out ee1/1 C2 C c1 c2 e1 out
18 Ft-doubler staes 4 c1 out 1 C1 - ee1/1 e c C/2 C2 out / jωc / 2 and out 2 / jωc..we have doubled f τ! 2 f τ / jf Note that this analysis has ored bb and Ccb...we have certaly not doubled fax, nor will we have doubled overall circuit bandwidth, iven the presence of these other parasitics.
19 ft-doubler vs Darlton thk ters of current as: H21 (2*H21H21*H21) (1H21) H21(1H21) C2 Current a is Sce / out Y c1 2H out c2 21 / ( H / jf ) Current a varies at lower frequencies as ( 2H 21 1 ) 2 21 ( H 2( f where / jf / jf which ives hih current a but neative put conductance 21 2 τ ) 2 ( ( 1 f f τ τ H 21 2 ) ) 2 2 f τ )... / jf
20 ft-doubler vs Darlton thk ters of current as: H21 2*H21 (1H21) H21 C2 H21 Current a is Sce / out Y c1 2H out c2 21 / 2H 1 2( f / 21 where H jf ) 2 jf 2 f Current a varies at all frequencies as (2 f τ τ 21 ( jf τ f τ 1 / jf (2πC / jf ) 2 ) / 2)
21 ft-doubler vs Darlton current as:
22 ft-doubler correction for Base resistance LCbb/ c1 out 1 - C1 e1 11 c2 ee1/1 LCbb/ bb 2 22 C2 The dicated ductance is necessary for equal current splitt tween the 2 transistors the presence of bb. n this case the put ipedance is C/2 series with bb/2 aa note that this correction is sificant cause bbc>>c/
23 ft-doubler vs Darlton What is the conclusion of all this? We can view the ft-doubler as a special case of the connected-collector Darlton with heavy eitter-follower load: this case the second-order (resonant) response is entirely suppressed. More enerally we iht vary the EF load to vary the dap. (The particular case of power aplifiers favors the ft-doubler due to efficiency reasons )
24 Tun: to prevent reflections, to peak a Zo Zo C Zo outzo S 21 1 Zo / 2 jωcz / 2 jωcz / S11, where Z 1 0 / 2 Zo jωcz jωc The put capacitance has hurt both S11and S21, put atch and a 0
25 Pi-section put tun. Zo L Zo CxC/2 Zo CC/2 outzo Absorb the transistor put capacitance to a pi -section C C L τz Effective for freqeucies such that the pi - section isshort (hence o C / 2 τ / Z (2C Z o ) Z f0 < 1/ πzoc) o o 2 Ga flatness and atch iproved for f<fo, but ade worse for f>f0
26 T-section put tun. Zo L/2 Zo Zo L/2 CC outzo Absorb the transistor put capacitance to a T -section C C L τz o C τ / Z (2C Z o ) Z o o Effective for freqeucies such that the pi - section isshort (hence f0 < 1/ πzoc) Note that for a iven C, we have doubled fo relative to the pi -section case...
27 T-section tun feedback aplifiers Zo L/2 Zo f L/2 CC Zo L/2 Lf Zo Zo outzo CC By Miller Approxiation : L f f Z o (1 A) ( L / 2)(1 A) This is frequently used 50 Oh FBAs...daner is reduced stability.
28 Brided-T-section put tun. Zo L/2 Zo C/2 Zo L/2 CC outzo C C L τz o C τ / Z (2C Z o ) Z o o nsofar as the transistor has an put ipedance odeled by C, S11is exactly zero.s21 nevertheless rolls off at about the sae frequency as the T -section case...
29 Brided-T-section put tun. Karthik Krishnaurthi
30 Tun Networks use Microstrip eleents... Zo L CxC/2 Zo CC/2 Zo L CxC/2 Zo CC/2 Zo L Cx CC/2 Zo
31 Distributed Aplifiers : Theory synthetic dra le synthetic ate le HEMT put/output capacitances absord to artificial put/output les broadband circuit ; a/bandwidth liited by HEMT resistive parasitics (f ax ) distributed structure Bra frequency put/output transission le sk-effect losses
32 Synthetic Transission Les transission le section le section ductance le section capacitance HEMT put capacitance synthetic put/output le fored by transission le sections transission le characteristic ipedance Z L/C cutoff (Bra) frequency f B 1/ π LC delay T LC
33 Transission Le Loss lossless le frequency-dependent loss α π f C1 Z0 / 2 frequency-dependent loss α Z0 / 2
34 HEMT Equivalent Circuit siplified equivalent circuit eleent values scale with HEMT size fτ 2πC s f f r ds / 4r / ax τ i
35 CS HEMT TWA
36 CS HEMT TWA--LC equivalent
37 CS HEMT TWA--SS odel
38 TWA liits to a and bandwidth... Gate (put)le loss : 2 Nα < 1/ 2...sets a hih frequency liit causeα ω C Dra (output) Le Loss Nα nput - Output Delay Misatch Low - Frequency Ga S 21 N(T d ate < 1/ 2...sets a a liit causeα T N dra ( Z o ) < just requires / 2 we et des riht... / 2)(capacitive deeneration ratio)...toether with above liits, sets feasible a - bandwidth Bra Frequency f < 1/ π LC...can ade very hih with lots of very sall transistors...no proble... d Z o ds 2 i...
39 Undaped Darlton FBA S S S
40 Feedback Aplifier with Follower Driv ft-doubler 10 Gas, db S 21 S S Frequency, GHz
41 80 GHz HBT Distributed Aplifier S 21 5 Gas, db S S Frequency, GHz
42 dfdfasddffasdfd
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