Lecture 1: Introduction to NEMS
|
|
- Nora Fisher
- 6 years ago
- Views:
Transcription
1 Lecture 1: Introduction to NEMS Horacio D. Espinosa Acknowledgments: NSF-NIT, NSF-NSEC
2 Int. Technology oadmap for Semiconductors Technology Tmi n(s) Tmax (s) CDmin (m) CDmax (m) Energy J/op Cost min $/gate Cost max $/gate NEMS 1E-7 1E-3 1E-8 1E-7 1E-1 1E-8 1E-5 Molecular 1E-8 1E-3 1E-9 5E-9 1E- 1E-1 1E-1
3 ecent Developments In Nanoelectronics First CNT Single-Electron-Transistor (SET) by depositing of a CNT on top of Au electrodes with SiO as the dielectric layer. Local barrier induced with atomic force microscope (AFM) Dekker, et al, Science, 1, 93, 76 Logic Circuit with Carbon Nanotube Transistor Adrian Bachtold, et al, Science, 1, 94, 1317
4 Nanodevices in the Life Sciences NW or CNT sensors Principle: Biologically gated transistors Nano size is needed to achieve high signal to noise ratios. Largest multiplexing capability. Micro/Nano Cantilevers Principle: Molecular binding deflects the cantilevers and introduces a frequency shift. Good multiplexing capability. Challenges Fabrication yield Need for covalent binding of biomolecules deconvolution of noise from signal, especially from nonspecific molecules. M. Ferrari, Nature, Vol. 5, 5
5 NanoElectroMechanical Systems ueckes, et al., Science, 89, U i W/Pt CNT or NW NANTEO Cantilever NEMS Si 3 N 4 Au Principle for bi- stability van der Waals Latching Electrostatic forces with feedback control SiO Gap < 1 nm ~ 1-1 nm Si AM type Non-Volatile Volatile Ke and Espinosa, App. Phys. Letts., 85(4), 681
6 Other NEMS Examples CNT nanorelay device Schematic diagrams of a CNT nanorelay device (A) (eprinted with permission from [13], J. Kinaret, et al., Appl. Phys. Lett. 8, 187 ()., American Institute of Physics) and SEM image of a fabricated nanorelay device (B) (eprinted with permission from [4], S. Lee, et al., Nano Lett. 4, 7 (4). 4, American Chemical Society). I-V sg characteristics of a nanotube relay initially suspended approximately 8 nm above the gate and drain electrodes. eprinted with permission from S. Lee, et al., Nano Lett. 4, 7 (4). 4, American Chemical Society.
7 Tunable oscillators Other NEMS Examples SEM image of a suspended device (top) and a schematic of device geometry (bottom). Scale bar, 3 nm. The sides of the trench, typically µm wide and 5 nm deep, are marked with dashed lines. A suspended nanotube can be seen bridging the trench. eprinted with permission from [3], V. Sazonova, et al., Nature 431, 84 (4). 4, Nature Publishing Group. Measurements of resonant response. (a) Detected current as a function of driving frequency; (b)- (c) Detected current as a function of gate voltage Vg and frequency for devices 1 and ; (d) Theoretical predictions for the dependence of vibration frequency on gate voltage for a representative device. eprinted with permission from V. Sazonova, et al., Nature 431, 84 (4). 4, Nature Publishing Group.
8 otational motors Other NEMS Examples Series of SEM images showing the actuator rotor plate at different angular displacements. The schematic diagrams located beneath each SEM image illustrate a cross-sectional view of the position of the nanotube/rotor-plate assembly. Scale bar, 3 nm. eprinted with permission from A. M. Fennimore, et al., Nature 44, 48 (3). 3, Nature Publishing Group.
9 Case Study: Nanocantilever Switch Si 3 N 4 W/Pt U i CNT or NW Au Operation Electrostatic force deflects the cantilever until pull-in leading to a lower stable equilibrium position, current in the circuit i>. When the cantilever is deflected in the upper stable equilibrium position, current in the circuit i= SiO Nano Device Features Si eliable ON and OFF states due to the feedback control mechanism U U i = i > OFF ON Operating frequency (1 to 1MHz) Critical Dimension (1-1 nm) C.-H. Ke, et al., App. Phys. Letts, 85(4), 681
10 van der Waals Forces A B ext SWNT int t MWNT graphene d n = 1 n = n = 3 graphene d n = 1 n = n = 3 n = N n = N van der Waals integration of a SWNT (A) and MWNT(B) over a graphite ground plane, M. Desquenes,, et al., Nanotechnology 13, 1 ()., Institute of Physics.
11 Continuum Approximation The Lennard-Jones potential between two atoms i and j is given by C C φ ij = (1) r r 1 1 ij 6 6 ij A Where r ij is the distance between atoms i and j and C 6 and C 1 are attractive and repulsive constants, respectively. For the carboncarbon interaction, C 6 = 15. evå 6, C 1 = 4.1 kevå 1, and the equilibrium spacing r = Å. SWNT A continuum model was established to compute the van der Waals energy by the double volume integral of the Lennard- Jones potential, that is, E vdw = ν1 ν n1n r 1 C 1 6 ( ν, ν ) r ( ν, ν ) 1 Let us consider a single walled carbon nanotube (SWNT) freestanding above a ground plane consisting of layers of graphite sheets, with interlayer distance d = 3.35 Å. The energy per unit length of the nanotube is given by C 1 6 dν1dν () graphene d n = 1 n = n = 3 n = N E vdw L = πσ N π π n= 1 1 C 1 [( n 1)d + r + + sinθ ] 4[ ( n 1)d + r + + sinθ ] init 1 C init 6 4 dθ (3) where, L is the length of the nanotube, is the radius of the nanotube, is the distance between the bottom of nanotube and the top graphene sheet, N is the number of graphene sheets and σ= 38 nm - is the graphene surface density.
12 Continuum Approximation When r init is much larger than the equilibrium spacing r, the repulsive component can be ignored and Eq. (3) can be simplified as E vdw L = C σ π 6 ( N 1) d + rinit ( + r)[ 3 + ( r + ) ] 7 / [ ( r + ) ] r= rinit (4) For a multi-walled carbon nanotube, as illustrated in the figure to the left, the energy per unit length can be obtained by summing up the interaction between all separate shells and layers. E C σ π + = ext ( N 1) d rinit vdw 6 L = int r= rinit ( + r)[ 3 + ( r + ) ] 7 / [( r + ) ] (5) B ext MWNT int t graphene d n = 1 n = n = 3 n = N Comparison of the continuum van der Waals energy given by Eq. (1) with the discrete pairwise summation given by Eq. (4).
13 x Electrostatic Force Charge Distribution along the Nanotube (I) L/ L/ The governing equations include: V y H z The Laplace s Equation: V V V V = + + x y z = The electric field strength is given by, Schematic of a biased nanotube with radius and length L above a grounded infinite plane. V is the biased voltage E = - V The charge density per unit length V = V V = Ω 1 Ω ρ L = ρ Ads = ρ Ads s s V = -V Ω The surface charge density is ρ A =ε E n Computational domain
14 BEM Electrostatic Analysis Electrostatic Force Charge Distribution along the Nanotube (II) ρ L [pc/μm ] ρ L Charge per unit length (pc/m) Position (μm) Q se Q se z -L/ L/ Through a parametric study, we found that if L>> L * Total Charge where ρ Q = ρ L = 1 cosh L L + Q c πε V ( 1+ H / ) Charge distribution for a biased armchair carbon nanotube. The parameters are ext = 9.15nm, H = 1nm and L = 1µm. Q c.85ρ L[ (H+) ] 1/3 L* is the minimum length beyond which the end charge distribution function does not change. It is related to and H, see Ke and Espinosa, JAM, Vol.7, 5.
15 q elec 1) Mechanical Equation Continuum theory 1 = V EI Electrostatic: dc( r) dr van der Waals: Time Independent Analysis 4 d w 4 dx ; = qelec ( r) + q C( r) = C d vdw ( r) ( r){1 +.85[( H Uniform charge Dequesnes et al., Nanotechnology, 13,, pp q n vdw 1 d = dr and n E L vdw are the density of ; E vdw + ext ) V ext ] 1/3 H δ ( x x Concentrated charge C1 = n1n 1 vv 1 r 1 atoms in volumes v x tip L )}; C 6 ( v, v ) r ( v, v ) 1 and v C 1 6 d dv q 1 = dv cosh r 1 πε (1 + w r ext ) E is the Young s Modulus; I is the moment of inertia; w is the deflection of the cantilever; r is the distance between the axis of the cantilever to the ground; H is the step height, C d is the capacitance for an infinite long cylinder, ext is the outer radius of the cylinder; L is the length; q vdw is the van der Waals distributed force, ε ο is the permittivity in vacuum.
16 Time Independent Analysis ) Electrical Equations Lumped Model x L q w A U Equivalent circuit V H r T V V U T = 1- V U Tunneling resistance T = exp( / λ) Tunneling current i = V exp(- / 1 λ ) ; λ = 1. φ(ev) o -1 A U is the total applied voltage; V is the voltage applied to the cantilever; is the contact resistance; is the feedback resistor; Δ is the gap between the cantilever and the ground; Φ is the work function( for MWNT Φ = 5eV)
17 Device Characteristics 1 (a) 1-6 (b) (nm) 1 1 Pull-out Pull-in i (A) Pull-out Pull-in U (volt) U (volt) The pull-in and pull-out processes plus the lower and upper stable equilibrium positions form the characteristic curve of the device with a hysteretic loop. E = 1. TPa, ext =9.15nm, int =6nm, L=5nm, H = 1nm, o =1KΩ and = 1GΩ.
18 Key Issues in the Device Design 1) van der Waal (vdw) force - If the length of cantilever is long enough, the vdw force may hold the cantilever down ( stiction ) ) Condition on the Feedback esistor 3) Thermal Vibration V V V PI exp( / λ) The CNT tip vibration amplitude is A = A = 1.86 T = 3 K A =. T = 4. K 3 L kt E( 4 ext int ) where k is Boltzmann constant (1.38x1-3 J/K) and T is the temperature in Kelvins Treacy et al, Nature, 381,
19 V H x s Finite Kinematics and Charge Concentration Effects L q Pull-in Analytical Model w c Energy Method: the total potential energy of the system is: W ( c) = E ( c) E ( c) E ( c) elast elec vdw E E elast = () c EI L dϑ ds L devdw ds ds ( w) ds E elec () c w( x) = L x L vdw V PI k 1+ k 1+ k FK TIP ; ; H ln L H ext deelec ds EI ε c ( w) ds k.85 Equilibrium: Instability: FK 8 H ; k ; 9 L d dw dc W dc ( c) ( c) = = ( ( H ) ) TIP 55 ext + k. L FK refers to finite kinematics; TIP refers to concentrated charge Ke et al., J. Mech. Phys. Solids, 53, 1314 (5) ext 1 3
20 Time Dependent Analysis - Device Dynamics Objective: examine the time response of pull-in and pull-out processes x L q elec C CNT C I ; CNT much smaller than I CNT U H r U A C V C CNT T Governing Equations (1) r r r ρa + c + EI = q elec + q 4 vdw t t x πaρω c where = Q (3) C ( x,t) 4 CNT () U = 1+ C CNT Equivalent circuit for short and small diameter nanotubes L T dc + dt CNT ( t) = C( r( x, t)) dx V + ( C + C ) CNT dv dt 1 / { 1+. ( ext ( ext + H ) ) ( x L) } 1 3 ( 1+ r( x,t) / ) = 85 δ 1 cosh ext
21 Pull-in esponse Applied voltage signal Tip Position vs. time Time esponse U U Fastest time response for minimized C and t Current vs. time V max = 63m/s U V max =8m/s U E = 1. TPa, ext =9.15 nm, int =6 nm, L= 5 nm, H = 1 nm, =1 KΩ and =1 GΩ, Q = 5, C =C CNT ()
22 Device Level In-Situ SEM Experiments Objective: experimentally identify pull-in, pull-out and I-V characteristic curve SEM Gun SEM chamber Flange i Probe Coaxial cable Triaxial cable U CNT SMU w/ PA Keithley SMU w/ PA 4 SCS BNC-TX adapter The resolution of current measurement is up to.1fa
23 Flange Nanomanipulation A customized SEM flange holding a 3-D nanomanipulator manufactured by Klocke Nanotechnik Inc. with two electric feedthroughs, a 3-axis PZT actuator, and a tungsten probe mounted to the manipulator s probe holder. probe PZT actuator Feedthroughs SEM images of the manipulation of carbon nanotubes using the 3D Klocke Nanotechnik nanomanipulator. (A) Manipulator probe is approaching a protruding nanotube. The sample is dried nanotube solution on top of a TEM copper grid. (B) Manipulator probe makes contact with the free end of the nanotube and the nanotube is welded to the probe by EBID of platinum. (C) A single nanotube mounted to the manipulator probe. (A) (B) (C)
24 In-Situ SEM Pull-in Experiments 93 o SEM Gun CNT Probe Gap (µm) V PI k 1+ k 1+ k FK TIP H ln L H ext EI ε E = 1. TPa, = 3.5 nm, L = 6.8 µm, H = 3 µm V PI =48 Volts Electrode 1.5 Experimental Data Analytical esult When finite kinematics is neglected, error is 7%. U Voltage (volt) When charge concentration is neglected, error is 15%. U = 1 Volt 5µm U = 3 Volts 5µm U = 46 Volts 5µm H
25 Pull-in/Pull in/pull-out Experiment and I-V I V curve U = U = 3 Volts U = 1 Volts 3 μm 3 μm 3 μm I (A ) 1.E-7 1.E-8 1.E-9 1.E-1 1.E-11 1.E-1 1.E-13 1.E-14 Experiment Measurement Theoretical Prediction U (volt) Parameter used in theoretical prediction Length of nanotube L = 9 µm (before pull-in) L = 7.9 µm (after pull-in) Outer diameter: 5 nm; inner diameter:15 nm E = 1TPa, Feedback resistor = 1 GΩ Contact resistance 5 Ω
26 L = 13. µm Failure Modes L = 11.3 µm 3 μm 3 μm Original L = 9. µm L = 7.9 µm After 1 st pull-in/pull-out 3 μm L = 7. µm 3 μm 3 μm 3 μm After nd pull-in/pull-out After 3 rd pull-in/pull-out After 4 th pull-in/pull-out
27 Failure Modes L = 9. µm U IN =3 V L = 7.9 µm L = 7. µm After nd P in -P out After 3 rd P in -P out 3 μm After 4 th P in -P out Possible Failure Modes - Fracture - Sublimation 3 µm 3 µm 3 nm Pull-in voltage: U=7 volts ; V max ~ 3 m/s
28 Failure Modes - Fracture (a) Before actuation (b) After second pull-in/pull in/pull-out (c) After lateral displacement of nanomanipulator
29 Failure Mode Dynamic Buckling? 4 r r r ρa + [ fc ( x, t) ] + EI = qelec + q 4 t x x x vdw Gladden et al, PL, Vol σ = fc fc.58µ N = = = 3. 64GPa A π d π *4nm*.335nm ext α CNT f c (x,t) Moment(N*m) 8.E-14 6.E-14 4.E-14.E-14.E+ -.E-14-4.E-14-6.E-14 t=.191ns t=.ns t=.5ns t=.7ns t=3.ns t=3.5ns f λ = πd c V T = π *8e 9 3e9 sqrt =.968µ m -8.E x(nm) Breaking points at n 4 λ λ = 1.484µ m ; ; 3λ 4 =.6µ m
30 Discussion Density-Functional Calculations of charge distribution reveal that there is a threshold Voltage beyond which Coulomb repulsion of concentrated charges lead to unstable CNT ends with C atom ejection. This voltage is a function of the tube end (open/close) and length. Capped SWNTs can withstand voltages as high as 1 Volts. However, thermal motion induced by charge transport and mechanical deformation can destabilize the tube at lower voltages. Observed failure is likely the result from both high current densities and mechanical impact effects. To decouple these effects AFM tunneling measurements should be pursued. Multiscale electro-mechanical modeling is also needed to gain insight into deformation and electronic states. Ultimately, dimensionless maps defining regions of robust device operation need to be developed. elaxed atomic positions and bonding for (5,5) arm chair SWNT; Keblinski et al., PL, Vol. 89,.
31 Nanofabrication of NEMS Arrays Si wafter with SiN 4 layer, patterned Au/Cr layer and PECVD SiO layer Au/Cr Si 3 N 4 SiO Si Surface functionalization using NFP Directed Self assembly of CNTs/NWs in solution E-beam evaporation of Au/Cr and pattern with e-beam lithography ao et al, Nature, Vol. 45, 3 elease the CNT by removing the SiO layer using wet etching (HF) or plasma etching Schematic of fabrication steps
32 1-D D Array of Nano Fountain Probes Microchannels eservoir Substrate a b LFM images of areas (15 µm x 15 µm) patterned with 16- mercaptohexadecanoic (MHA) and H-Perfluorododecane- 1-thiol (PFD)
33 SWCNT Assembly by DPN patterning MHA patterns with ODT passivation directs the self assembly of SWCNTs Preliminary NEMS devices fabricated by lithography and directed self assembly of SWCNTs SWCNTs
34 Direct CVD Growth Electric-field-directed growth of freestanding single-walled nanotubes. Y. Zhang, et al., Appl. Phys. Lett. 79, 3155 (1). 1, American Institute of Physics.
35 Conclusions We reviewed some advances and applications of Nanoelectronics and Nanoelectromechanical Systems We reviewed the in-situ SEM electromechanical testing of a NEMS bi-stable switch. The study revealed failure modes as a function of current density and mechanical deformation. Additional experiments and models are needed to define design maps and optimal operation conditions. Scaling up the nanofabrication of NEMS into arrays appears feasible. New tools such as the Nano Fountain Probe Array appears promising for the patterning of various inorganic and organic molecular inks that can be employed in the directed self-assembly of CNTs or NWs with a control of length, orientation and characteristic dimensions.
36 Acknowledgments: Y. Zhu, Northwestern University C-H. Ke, Northwestern University N. Moldovan, Northwestern University K-H. Kim, Northwestern University B. Peng, Northwestern University T. Belytschko, Northwestern University G. Schatz, Northwestern University C. Mirkin, Northwestern University Z. Bazant, Northwestern University N. Pugno, Politecnico di Torino P. Zapol, ANL O. Auciello, ANL I. Petrov, UIUC J. Mahon, UIUC M. Marshall, UIUC B. Prorok, Aurburn University National Science Foundation-NIT, J. Larsen-Basse, K. Chong Federal Aviation Administration, J. Newcomb NSF-NSEC at NU for Integrated Nanopatterning and Detection Technology Office of Naval esearch, L. Kabakoff
Electron Microscopy Testing of Nanostructures
MEMS devices for In-Situ Electron Microscopy Testing of Nanostructures Horacio D. Espinosa Y. Zhu, C-H. C Ke,, N. Moldovan Acknowledgments: NSF-NIRT, NSF-NSEC, FAA, ONR NEMS Characterization Technique
More informationUltralow-Power Reconfigurable Computing with Complementary Nano-Electromechanical Carbon Nanotube Switches
Ultralow-Power Reconfigurable Computing with Complementary Nano-Electromechanical Carbon Nanotube Switches Presenter: Tulika Mitra Swarup Bhunia, Massood Tabib-Azar, and Daniel Saab Electrical Eng. And
More information24 Nanoelectromechanical Systems Experiments and Modeling
24 Nanoelectromechanical Systems Experiments and Modeling Horacio D. Espinosa Changhong Ke 24.1 Introduction Nanoelectromechanical systems (NEMS) are made of electromechanical devices that have critical
More informationSupplementary Methods A. Sample fabrication
Supplementary Methods A. Sample fabrication Supplementary Figure 1(a) shows the SEM photograph of a typical sample, with three suspended graphene resonators in an array. The cross-section schematic is
More informationIntroduction to Nanotechnology Chapter 5 Carbon Nanostructures Lecture 1
Introduction to Nanotechnology Chapter 5 Carbon Nanostructures Lecture 1 ChiiDong Chen Institute of Physics, Academia Sinica chiidong@phys.sinica.edu.tw 02 27896766 Carbon contains 6 electrons: (1s) 2,
More informationCHAPTER 5 FIXED GUIDED BEAM ANALYSIS
77 CHAPTER 5 FIXED GUIDED BEAM ANALYSIS 5.1 INTRODUCTION Fixed guided clamped and cantilever beams have been designed and analyzed using ANSYS and their performance were calculated. Maximum deflection
More informationOutline Scanning Probe Microscope (SPM)
AFM Outline Scanning Probe Microscope (SPM) A family of microscopy forms where a sharp probe is scanned across a surface and some tip/sample interactions are monitored Scanning Tunneling Microscopy (STM)
More informationSUPPLEMENTARY NOTES Supplementary Note 1: Fabrication of Scanning Thermal Microscopy Probes
SUPPLEMENTARY NOTES Supplementary Note 1: Fabrication of Scanning Thermal Microscopy Probes Fabrication of the scanning thermal microscopy (SThM) probes is summarized in Supplementary Fig. 1 and proceeds
More informationLarge scale growth and characterization of atomic hexagonal boron. nitride layers
Supporting on-line material Large scale growth and characterization of atomic hexagonal boron nitride layers Li Song, Lijie Ci, Hao Lu, Pavel B. Sorokin, Chuanhong Jin, Jie Ni, Alexander G. Kvashnin, Dmitry
More informationSimple piezoresistive accelerometer
Simple piezoresistive pressure sensor Simple piezoresistive accelerometer Simple capacitive accelerometer Cap wafer C(x)=C(x(a)) Cap wafer may be micromachined silicon, pyrex, Serves as over-range protection,
More informationSupplementary Figures
Supplementary Figures Supplementary Figure 1 Molecular structures of functional materials involved in our SGOTFT devices. Supplementary Figure 2 Capacitance measurements of a SGOTFT device. (a) Capacitance
More informationDiameter- and Loading Mode Effects of Modulus in ZnO Nanowires
Diameter- and Loading Mode Effects of Modulus in ZnO Nanowires In Situ Measurements & Theoretical Understanding Mo-rigen H, CQ Chen, Y Shi, YS Zhang, W Zhou, JW Chen, YJ Yan, J Zhu* Beijing National Center
More informationMetallic: 2n 1. +n 2. =3q Armchair structure always metallic = 2
Properties of CNT d = 2.46 n 2 2 1 + n1n2 + n2 2π Metallic: 2n 1 +n 2 =3q Armchair structure always metallic a) Graphite Valence(π) and Conduction(π*) states touch at six points(fermi points) Carbon Nanotube:
More informationCarbon Nanotubes for Interconnect Applications Franz Kreupl, Andrew P. Graham, Maik Liebau, Georg S. Duesberg, Robert Seidel, Eugen Unger
Carbon Nanotubes for Interconnect Applications Franz Kreupl, Andrew P. Graham, Maik Liebau, Georg S. Duesberg, Robert Seidel, Eugen Unger Infineon Technologies Corporate Research Munich, Germany Outline
More informationINF5490 RF MEMS. LN03: Modeling, design and analysis. Spring 2008, Oddvar Søråsen Department of Informatics, UoO
INF5490 RF MEMS LN03: Modeling, design and analysis Spring 2008, Oddvar Søråsen Department of Informatics, UoO 1 Today s lecture MEMS functional operation Transducer principles Sensor principles Methods
More informationThere's Plenty of Room at the Bottom
There's Plenty of Room at the Bottom 12/29/1959 Feynman asked why not put the entire Encyclopedia Britannica (24 volumes) on a pin head (requires atomic scale recording). He proposed to use electron microscope
More informationGHZ ELECTRICAL PROPERTIES OF CARBON NANOTUBES ON SILICON DIOXIDE MICRO BRIDGES
GHZ ELECTRICAL PROPERTIES OF CARBON NANOTUBES ON SILICON DIOXIDE MICRO BRIDGES SHENG F. YEN 1, HAROON LAIS 1, ZHEN YU 1, SHENGDONG LI 1, WILLIAM C. TANG 1,2, AND PETER J. BURKE 1,2 1 Electrical Engineering
More informationATOMISTIC CAPACITANCE OF A NANOTUBE ELECTROMECHANICAL DEVICE
International Journal of Nanoscience, Vol. 1, Nos. 3 & 4 (2002) 337 346 c World Scientific Publishing Company ATOMISTIC CAPACITANCE OF A NANOTUBE ELECTROMECHANICAL DEVICE SLAVA V. ROTKIN,, VAISHALI SHRIVASTAVA,
More informationNano-mechatronics. Presented by: György BudaváriSzabó (X0LY4M)
Nano-mechatronics Presented by: György BudaváriSzabó (X0LY4M) Nano-mechatronics Nano-mechatronics is currently used in broader spectra, ranging from basic applications in robotics, actuators, sensors,
More informationGraphene A One-Atom-Thick Material for Microwave Devices
ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY Volume 11, Number 1, 2008, 29 35 Graphene A One-Atom-Thick Material for Microwave Devices D. DRAGOMAN 1, M. DRAGOMAN 2, A. A. MÜLLER3 1 University
More informationAdsorption and Phase Properties of Inert Gases on Suspended Carbon Nanotube Resonators
Adsorption and Phase Properties of Inert Gases on Suspended Carbon Nanotube Resonators Ricky Roy University of Puget Sound Abstract Carbon nanotubes offer a new regime for adsorption experiments in the
More informationElectronic transport in low dimensional systems
Electronic transport in low dimensional systems For example: 2D system l
More informationLecture 4 Scanning Probe Microscopy (SPM)
Lecture 4 Scanning Probe Microscopy (SPM) General components of SPM; Tip --- the probe; Cantilever --- the indicator of the tip; Tip-sample interaction --- the feedback system; Scanner --- piezoelectric
More informationAtomic and molecular interactions. Scanning probe microscopy.
Atomic and molecular interactions. Scanning probe microscopy. Balázs Kiss Nanobiotechnology and Single Molecule Research Group, Department of Biophysics and Radiation Biology 27. November 2013. 2 Atomic
More informationThe New Boundary Condition Effect on The Free Vibration Analysis of Micro-beams Based on The Modified Couple Stress Theory
International Research Journal of Applied and Basic Sciences 2015 Available online at www.irjabs.com ISSN 2251-838X / Vol, 9 (3): 274-279 Science Explorer Publications The New Boundary Condition Effect
More informationSENSOR DEVICES MECHANICAL SENSORS
SENSOR DEVICES MECHANICAL SENSORS OUTLINE 4 Mechanical Sensors Introduction General mechanical properties Piezoresistivity Piezoresistive sensors Capacitive sensors Applications INTRODUCTION MECHANICAL
More informationPiezoelectric Resonators ME 2082
Piezoelectric Resonators ME 2082 Introduction K T : relative dielectric constant of the material ε o : relative permittivity of free space (8.854*10-12 F/m) h: distance between electrodes (m - material
More informationPIEZOELECTRIC TECHNOLOGY PRIMER
PIEZOELECTRIC TECHNOLOGY PRIMER James R. Phillips Sr. Member of Technical Staff CTS Wireless Components 4800 Alameda Blvd. N.E. Albuquerque, New Mexico 87113 Piezoelectricity The piezoelectric effect is
More informationSupplementary Figure S1. AFM images of GraNRs grown with standard growth process. Each of these pictures show GraNRs prepared independently,
Supplementary Figure S1. AFM images of GraNRs grown with standard growth process. Each of these pictures show GraNRs prepared independently, suggesting that the results is reproducible. Supplementary Figure
More informationSTM: Scanning Tunneling Microscope
STM: Scanning Tunneling Microscope Basic idea STM working principle Schematic representation of the sample-tip tunnel barrier Assume tip and sample described by two infinite plate electrodes Φ t +Φ s =
More informationVapor-Phase Cutting of Carbon Nanotubes Using a Nanomanipulator Platform
Vapor-Phase Cutting of Carbon Nanotubes Using a Nanomanipulator Platform MS&T 10, October 18, 2010 Vladimir Mancevski, President and CTO, Xidex Corporation Philip D. Rack, Professor, The University of
More informationCharacterization of MEMS Devices
MEMS: Characterization Characterization of MEMS Devices Prasanna S. Gandhi Assistant Professor, Department of Mechanical Engineering, Indian Institute of Technology, Bombay, Recap Characterization of MEMS
More informationScanning Tunneling Microscopy
Scanning Tunneling Microscopy References: 1. G. Binnig, H. Rohrer, C. Gerber, and Weibel, Phys. Rev. Lett. 49, 57 (1982); and ibid 50, 120 (1983). 2. J. Chen, Introduction to Scanning Tunneling Microscopy,
More informationScanning Tunneling Microscopy
Scanning Tunneling Microscopy Scanning Direction References: Classical Tunneling Quantum Mechanics Tunneling current Tunneling current I t I t (V/d)exp(-Aφ 1/2 d) A = 1.025 (ev) -1/2 Å -1 I t = 10 pa~10na
More informationsingle-electron electron tunneling (SET)
single-electron electron tunneling (SET) classical dots (SET islands): level spacing is NOT important; only the charging energy (=classical effect, many electrons on the island) quantum dots: : level spacing
More informationReport on design of the CNT based RF switch
CARBON BASED SMART SYSTEM FOR WIRELESS APPLICATION Start Date : 01/09/1 Project n 31835 Duration : 36 months Topic addressed : Very advanced nanoelectronic components: design, engineering, technology and
More informationIn situ studies on dynamic properties of carbon nanotubes with metal clusters
In situ studies on dynamic properties of carbon nanotubes with metal clusters Jason Chang, Yuan-Chih Chang, Der-Hsien Lien, Shaw-Chieh Wang*, Tung Hsu*, and Tien T. Tsong Institute of Physics, Academia
More informationInstrumentation and Operation
Instrumentation and Operation 1 STM Instrumentation COMPONENTS sharp metal tip scanning system and control electronics feedback electronics (keeps tunneling current constant) image processing system data
More informationElectric Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon. Nanotubes. Yung-Fu Chen and M. S. Fuhrer
Electric Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon Nanotubes Yung-Fu Chen and M. S. Fuhrer Department of Physics and Center for Superconductivity Research, University of Maryland,
More information1. Narrative Overview Questions
Homework 4 Due Nov. 16, 010 Required Reading: Text and Lecture Slides on Downloadable from Course WEB site: http://courses.washington.edu/overney/nme498.html 1. Narrative Overview Questions Question 1
More informationSimulating the buckling deflection of carbon nanotube-made detectors used in medical detections by applying a continuum mechanics model
ie Science Journal 3;() Simulating the buckling delection o carbon nanotube-made detectors used in medical detections by applying a continuum mechanics model Alireza Vahdati *, Mehdi Vahdati,, R. A. Mahdavinejad
More informationDocumentToPDF trial version, to remove this mark, please register this software.
PAPER PRESENTATION ON Carbon Nanotube - Based Nonvolatile Random Access Memory AUTHORS M SIVARAM PRASAD Sivaram.443@gmail.com B N V PAVAN KUMAR pavankumar.bnv@gmail.com 1 Carbon Nanotube- Based Nonvolatile
More informationStudies of nanotube-based resonant oscillators through multiscale modeling and simulation
Studies of nanotube-based resonant oscillators through multiscale modeling and simulation Shaoping Xiao and Wenyi Hou Department of Mechanical and Industrial Engineering and Center for Computer-Aided Design,
More informationNEM Relays Using 2-Dimensional Nanomaterials for Low Energy Contacts
NEM Relays Using 2-Dimensional Nanomaterials for Low Energy Contacts Seunghyun Lee, Ji Cao 10/29/2013 A Science & Technology Professor H. -S. Philip Wong Electrical Engineering, Stanford University Center
More informationChapter 2 Lateral Series Switches
Chapter 2 Lateral Series Switches The objective of this chapter is to study the lateral RF MEMS series switch [1 14]. The switch consists of a silicon-core (Si-core) transmission line and a cantilever
More informationEN2912C: Future Directions in Computing Lecture 08: Overview of Near-Term Emerging Computing Technologies
EN2912C: Future Directions in Computing Lecture 08: Overview of Near-Term Emerging Computing Technologies Prof. Sherief Reda Division of Engineering Brown University Fall 2008 1 Near-term emerging computing
More informationSupporting Information
Supporting Information Thickness of suspended epitaxial graphene (SEG) resonators: Graphene thickness was estimated using an atomic force microscope (AFM) by going over the step edge from SiC to graphene.
More informationWhat are Carbon Nanotubes? What are they good for? Why are we interested in them?
Growth and Properties of Multiwalled Carbon Nanotubes What are Carbon Nanotubes? What are they good for? Why are we interested in them? - Interconnects of the future? - our vision Where do we stand - our
More informationThe World of Carbon Nanotubes
The World of Carbon Nanotubes Carbon Nanotubes Presentation by Jan Felix Eschermann at JASS05 from March 31st to April 9th, 2005 1 Outline Introduction Physical Properties Manufacturing Techniques Applications
More informationMeasuring charge transport through molecules
Measuring charge transport through molecules utline Indirect methods 1. ptical techniques 2. Electrochemical techniques Direct methods 1. Scanning probe techniques 2. In-plane electrodes 3. Break junctions
More informationA simple method for analysing the deformation of nanoelectromechanical switches based on carbon nanotubes. Yuantong Gu and Liangchi Zhang*
10 Int. J. Nanomanufacturing, Vol. 1, No., 006 A simple method for analysing the deformation of nanoelectromechanical switches based on carbon nanotubes Yuantong Gu and Liangchi Zhang* Mechanical and Mechatronic
More informationEE C245 / ME C218 INTRODUCTION TO MEMS DESIGN FALL 2009 PROBLEM SET #7. Due (at 7 p.m.): Thursday, Dec. 10, 2009, in the EE C245 HW box in 240 Cory.
Issued: Thursday, Nov. 24, 2009 PROBLEM SET #7 Due (at 7 p.m.): Thursday, Dec. 10, 2009, in the EE C245 HW box in 240 Cory. 1. Gyroscopes are inertial sensors that measure rotation rate, which is an extremely
More informationCarbon Nanotubes in Interconnect Applications
Carbon Nanotubes in Interconnect Applications Page 1 What are Carbon Nanotubes? What are they good for? Why are we interested in them? - Interconnects of the future? Comparison of electrical properties
More informationBuckling of Double-walled Carbon Nanotubes
Buckling o Double-walled Carbon anotubes Y. H. Teo Engineering Science Programme ational University o Singapore Kent idge Singapore 960 Abstract This paper is concerned with the buckling o double-walled
More informationChapter 3 Engineering Science for Microsystems Design and Fabrication
Lectures on MEMS and MICROSYSTEMS DESIGN and MANUFACTURE Chapter 3 Engineering Science for Microsystems Design and Fabrication In this Chapter, we will present overviews of the principles of physical and
More informationVibration Studying of AFM Piezoelectric Microcantilever Subjected to Tip-Nanoparticle Interaction
Journal of Novel Applied Sciences Available online at www.jnasci.org 2013 JNAS Journal-2013-2-S/806-811 ISSN 2322-5149 2013 JNAS Vibration Studying of AFM Piezoelectric Microcantilever Subjected to Tip-Nanoparticle
More informationTransduction Based on Changes in the Energy Stored in an Electrical Field. Lecture 6-5. Department of Mechanical Engineering
Transduction Based on Changes in the Energy Stored in an Electrical Field Lecture 6-5 Transducers with cylindrical Geometry For a cylinder of radius r centered inside a shell with with an inner radius
More informationTransport through Andreev Bound States in a Superconductor-Quantum Dot-Graphene System
Transport through Andreev Bound States in a Superconductor-Quantum Dot-Graphene System Nadya Mason Travis Dirk, Yung-Fu Chen, Cesar Chialvo Taylor Hughes, Siddhartha Lal, Bruno Uchoa Paul Goldbart University
More informationCarbon nanotubes in a nutshell. Graphite band structure. What is a carbon nanotube? Start by considering graphite.
Carbon nanotubes in a nutshell What is a carbon nanotube? Start by considering graphite. sp 2 bonded carbon. Each atom connected to 3 neighbors w/ 120 degree bond angles. Hybridized π bonding across whole
More informationIntroduction to Microeletromechanical Systems (MEMS) Lecture 9 Topics. MEMS Overview
Introduction to Microeletromechanical Systems (MEMS) Lecture 9 Topics MicroOptoElectroMechanical Systems (MOEMS) Grating Light Valves Corner Cube Reflector (CCR) MEMS Light Modulator Optical Switch Micromirrors
More informationResistance Thermometry based Picowatt-Resolution Heat-Flow Calorimeter
Resistance Thermometry based Picowatt-Resolution Heat-Flow Calorimeter S. Sadat 1, E. Meyhofer 1 and P. Reddy 1, 1 Department of Mechanical Engineering, University of Michigan, Ann Arbor, 48109 Department
More informationTransduction Based on Changes in the Energy Stored in an Electrical Field
Lecture 6-1 Transduction Based on Changes in the Energy Stored in an Electrical Field Electric Field and Forces Suppose a charged fixed q 1 in a space, an exploring charge q is moving toward the fixed
More information7.Piezoelectric, Accelerometer and Laser Sensors
7.Piezoelectric, Accelerometer and Laser Sensors 7.1 Piezoelectric sensors: (Silva p.253) Piezoelectric materials such as lead-zirconate-titanate (PZT) can generate electrical charge and potential difference
More informationSupplementary Figure 1 Dark-field optical images of as prepared PMMA-assisted transferred CVD graphene films on silicon substrates (a) and the one
Supplementary Figure 1 Dark-field optical images of as prepared PMMA-assisted transferred CVD graphene films on silicon substrates (a) and the one after PBASE monolayer growth (b). 1 Supplementary Figure
More informationNIMS: SEM + AFM. Current People, Overall Funding. SEM/AFM Concept. Russell M. Taylor II
Russell M. Taylor II Russ Taylor, Fall 02 Slide 1 Current People, Overall Funding Sustained hard work across disciplines CS:Russ Taylor, Leandra Vicci, Steve Pizer, Paul Morris, David Marshburn, Adam Seeger,
More informationSection 12: Intro to Devices
Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si
More informationMicroscopie a stilo: principi ed esempi di applicazione
Microscopie a stilo: principi ed esempi di applicazione Adele Sassella Dipartimento di Scienza dei Materiali Università degli Studi di Milano Bicocca adele.sassella@unimib.it Pavia, 22 aprile 2009 SCANNING
More informationIntensity (a.u.) Intensity (a.u.) Raman Shift (cm -1 ) Oxygen plasma. 6 cm. 9 cm. 1mm. Single-layer graphene sheet. 10mm. 14 cm
Intensity (a.u.) Intensity (a.u.) a Oxygen plasma b 6 cm 1mm 10mm Single-layer graphene sheet 14 cm 9 cm Flipped Si/SiO 2 Patterned chip Plasma-cleaned glass slides c d After 1 sec normal Oxygen plasma
More informationEFFECTIVE SIMULATION APPROACH FOR STUDY OF CARBON NANOTUBE MECHANICAL PROPERTIES
Oct 14 th 16 th 015, Brno, Czech Republic, EU EFFECTIVE SIMULATION APPROACH FOR STUDY OF CARBON NANOTUBE MECHANICAL PROPERTIES SVATOŠ Vojtěch *1,, NEUŽIL Pavel 1,, HRSTKA Miroslav 3, HUBÁLEK Jaromír 1,
More informationIntermittent-Contact Mode Force Microscopy & Electrostatic Force Microscopy (EFM)
WORKSHOP Nanoscience on the Tip Intermittent-Contact Mode Force Microscopy & Electrostatic Force Microscopy (EFM) Table of Contents: 1. Motivation... 1. Simple Harmonic Motion... 1 3. AC-Mode Imaging...
More informationA flexoelectric microelectromechanical system on silicon
A flexoelectric microelectromechanical system on silicon Umesh Kumar Bhaskar, Nirupam Banerjee, Amir Abdollahi, Zhe Wang, Darrell G. Schlom, Guus Rijnders, and Gustau Catalan Supporting Information Figure
More informationCarbon nanotubes in a nutshell
Carbon nanotubes in a nutshell What is a carbon nanotube? Start by considering graphite. sp 2 bonded carbon. Each atom connected to 3 neighbors w/ 120 degree bond angles. Hybridized π bonding across whole
More informationWafer-scale fabrication of graphene
Wafer-scale fabrication of graphene Sten Vollebregt, MSc Delft University of Technology, Delft Institute of Mircosystems and Nanotechnology Delft University of Technology Challenge the future Delft University
More informationIntroduction to Nanotechnology Chapter 5 Carbon Nanostructures Lecture 1
Introduction to Nanotechnology Chapter 5 Carbon Nanostructures Lecture 1 ChiiDong Chen Institute of Physics, Academia Sinica chiidong@phys.sinica.edu.tw 02 27896766 Section 5.2.1 Nature of the Carbon Bond
More informationNanotechnology where size matters
Nanotechnology where size matters J Emyr Macdonald Overview Ways of seeing very small things What is nanotechnology and why is it important? Building nanostructures What we can do with nanotechnology?
More informationNovel Dispersion and Self-Assembly
Novel Dispersion and Self-Assembly of Carbon Nanotubes Mohammad F. Islam 100g Department of Chemical Engineering and Department of Materials Science & Engineering Funding Agencies http://islamgroup.cheme.cmu.edu
More informationCarbon Nanotube Electronics
Carbon Nanotube Electronics Jeorg Appenzeller, Phaedon Avouris, Vincent Derycke, Stefan Heinz, Richard Martel, Marko Radosavljevic, Jerry Tersoff, Shalom Wind H.-S. Philip Wong hspwong@us.ibm.com IBM T.J.
More informationNIS: what can it be used for?
AFM @ NIS: what can it be used for? Chiara Manfredotti 011 670 8382/8388/7879 chiara.manfredotti@to.infn.it Skype: khiaram 1 AFM: block scheme In an Atomic Force Microscope (AFM) a micrometric tip attached
More informationVIBRATION CHARACTERISTICS OF EMBEDDED DOUBLE WALLED CARBON NANOTUBES SUBJECTED TO AN AXIAL PRESSURE
18 TH INTERNATIONAL CONFERENCE ON COMPOSITE MATERIALS VIBRATION CHARACTERISTICS OF EMBEDDED DOUBLE WALLED CARBON NANOTUBES SUBJECTED TO AN AXIAL PRESSURE X. W. Lei 1, T. Natsuki 2, J. X. Shi 1, Q. Q. Ni
More informationAtomic Force Microscopy imaging and beyond
Atomic Force Microscopy imaging and beyond Arif Mumtaz Magnetism and Magnetic Materials Group Department of Physics, QAU Coworkers: Prof. Dr. S.K.Hasanain M. Tariq Khan Alam Imaging and beyond Scanning
More informationFinite Element Analysis of Piezoelectric Cantilever
Finite Element Analysis of Piezoelectric Cantilever Nitin N More Department of Mechanical Engineering K.L.E S College of Engineering and Technology, Belgaum, Karnataka, India. Abstract- Energy (or power)
More informationHigh-resolution Characterization of Organic Ultrathin Films Using Atomic Force Microscopy
High-resolution Characterization of Organic Ultrathin Films Using Atomic Force Microscopy Jing-jiang Yu Nanotechnology Measurements Division Agilent Technologies, Inc. Atomic Force Microscopy High-Resolution
More information175-IJN Article No SPIN IN CARBON NANOTUBE-BASED OSCILLATORS
175-IJN Article No. 49 FA International Journal of Nanoscience Vol. 5, No. 1 (26) 47 55 World Scientific Publishing Company SPIN IN CARBON NANOTUBE-BASED OSCILLATORS SHAOPING XIAO Department of Mechanical
More informationSUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION Flexible, high-performance carbon nanotube integrated circuits Dong-ming Sun, Marina Y. Timmermans, Ying Tian, Albert G. Nasibulin, Esko I. Kauppinen, Shigeru Kishimoto, Takashi
More information3.052 Nanomechanics of Materials and Biomaterials Thursday 02/08/06 Prof. C. Ortiz, MIT-DMSE I LECTURE 2 : THE FORCE TRANSDUCER
I LECTURE 2 : THE FORCE TRANSDUCER Outline : LAST TIME : WHAT IS NANOMECHANICS... 2 HOW CAN WE MEASURE SUCH TINY FORCES?... 3 EXAMPLE OF A FORCE TRANSDUCER... 4 Microfabricated cantilever beams with nanosized
More informationSupporting Online Material for
www.sciencemag.org/cgi/content/full/310/5753/1480/dc1 Supporting Online Material for Electrowetting in Carbon Nanotubes J. Y. Chen, A. Kutana, C. P. Collier,* K. P. Giapis* *To whom correspondence should
More informationSupplementary material for High responsivity mid-infrared graphene detectors with antenna-enhanced photo-carrier generation and collection
Supplementary material for High responsivity mid-infrared graphene detectors with antenna-enhanced photo-carrier generation and collection Yu Yao 1, Raji Shankar 1, Patrick Rauter 1, Yi Song 2, Jing Kong
More informationOutlines 3/12/2011. Vacuum Chamber. Inside the sample chamber. Nano-manipulator. Focused ion beam instrument. 1. Other components of FIB instrument
Focused ion beam instruments Outlines 1. Other components of FIB instrument 1.a Vacuum chamber 1.b Nanomanipulator 1.c Gas supply for deposition 1.d Detectors 2. Capabilities of FIB instrument Lee Chow
More informationElectrical and Optical Properties. H.Hofmann
Introduction to Nanomaterials Electrical and Optical Properties H.Hofmann Electrical Properties Ohm: G= σw/l where is the length of the conductor, measured in meters [m], A is the cross-section area of
More informationIntroduction to Scanning Probe Microscopy
WORKSHOP Nanoscience on the Tip Introduction to Scanning Probe Microscopy Table of Contents: 1 Historic Perspectives... 1 2 Scanning Force Microscopy (SFM)... 2 2.1. Contact Mode... 2 2.2. AC Mode Imaging...
More informationFormation mechanism and Coulomb blockade effect in self-assembled gold quantum dots
Formation mechanism and Coulomb blockade effect in self-assembled gold quantum dots S. F. Hu a) National Nano Device Laboratories, Hsinchu 300, Taiwan R. L. Yeh and R. S. Liu Department of Chemistry, National
More information1. Introduction : 1.2 New properties:
Nanodevices In Electronics Rakesh Kasaraneni(PID : 4672248) Department of Electrical Engineering EEL 5425 Introduction to Nanotechnology Florida International University Abstract : This paper describes
More informationThe Nanotube SQUID. uhu,, M. Monthioux,, V. Bouchiat, W. Wernsdorfer, CEMES-Toulouse, CRTBT & LLN Grenoble
The Nanotube SQUID J.-P. Cleuziou,, Th. Ondarçuhu uhu,, M. Monthioux,, V. Bouchiat, W. Wernsdorfer, CEMES-Toulouse, CRTBT & LLN Grenoble Outline Sample fabrication Proximity effect in CNT The CNT superconducting
More informationElectrostatics of Nanowire Transistors
Electrostatics of Nanowire Transistors Jing Guo, Jing Wang, Eric Polizzi, Supriyo Datta and Mark Lundstrom School of Electrical and Computer Engineering Purdue University, West Lafayette, IN, 47907 ABSTRACTS
More informationGraphene Fundamentals and Emergent Applications
Graphene Fundamentals and Emergent Applications Jamie H. Warner Department of Materials University of Oxford Oxford, UK Franziska Schaffel Department of Materials University of Oxford Oxford, UK Alicja
More informationBasic Laboratory. Materials Science and Engineering. Atomic Force Microscopy (AFM)
Basic Laboratory Materials Science and Engineering Atomic Force Microscopy (AFM) M108 Stand: 20.10.2015 Aim: Presentation of an application of the AFM for studying surface morphology. Inhalt 1.Introduction...
More informationTorsional Buckling of Double-Walled Carbon Nanotubes
Torsional Buckling of Double-Walled Carbon Nanotubes S. H. Soong Engineering Science Programme, National University of Singapore Kent Ridge, Singapore 119260 ABSTRACT This paper is concerned with the torsional
More informationEE C245 / ME C218 INTRODUCTION TO MEMS DESIGN FALL 2011 C. Nguyen PROBLEM SET #7. Table 1: Gyroscope Modeling Parameters
Issued: Wednesday, Nov. 23, 2011. PROBLEM SET #7 Due (at 7 p.m.): Thursday, Dec. 8, 2011, in the EE C245 HW box in 240 Cory. 1. Gyroscopes are inertial sensors that measure rotation rate, which is an extremely
More informationFunctionalized Carbon Nanotubes a key to nanotechnology?
1 27th Max Born Symposium Multiscale Modeling of Real Materials Wroclaw, Sep 19, 2010 Functionalized Carbon Nanotubes a key to nanotechnology? Karolina Milowska, Magda Birowska & Jacek A. Majewski Faculty
More informationFE modelling of multi-walled carbon nanotubes
Estonian Journal of Engineering, 2009, 15, 2, 77 86 doi: 10.3176/eng.2009.2.01 FE modelling of multi-walled carbon nanotubes Marino Brcic, Marko Canadija, Josip Brnic, Domagoj Lanc, Sanjin Krscanski and
More information