Theory of Hydrogen-Related Levels in Semiconductors and Oxides

Size: px
Start display at page:

Download "Theory of Hydrogen-Related Levels in Semiconductors and Oxides"

Transcription

1 Theory of Hydrogen-Related Levels in Semiconductors and Oxides Chris G. Van de Walle Materials Department University of California, Santa Barbara

2 Acknowledgments Computations J. Neugebauer (Max-Planck-Institut, Düsseldorf) A. Janotti (UCSB) S. Limpijumnong (Suranaree U. Tech., Thailand) B. Tuttle (Penn State University) Support AFOSR; ONR Palo Alto Research Center Alexander von Humboldt Foundation Fritz-Haber-Institut & Paul-Drude-Institut, Berlin

3 Motivation for studying hydrogen Omnipresent impurity Growth vapor-phase transport, hydrothermal growth, MOCVD, MBE, sputtering (H 2 atmosphere), Processing: forming gas anneal, Beneficial effects & applications Passivation of defects Si/ Reliability? (deuterium) High-k dielectrics? C. G. Van de Walle and B. Tuttle, IEEE Trans. Electr. Dev. 47, 1779 (2000). hydrogen source gate silicon drain

4 Motivation for studying hydrogen Unintended / detrimental effects Passivation of dopant impurities DRAM variable retention time Nanoscale MOSFETs Source: Intel

5 Motivation for studying hydrogen Unintended / detrimental effects Passivation of dopant impurities DRAM variable retention time Nanoscale MOSFETs Trapping of hydrogen in oxide Stress-induced leakage currents Blöchl and Stathis, Phys. Rev. Lett. 83, 372 (1999). Charging of interface Afanas ev and Stesmans, Appl. Phys. Lett. 72, 79 (1998).

6 Hydrogen impurities Understanding interstitial hydrogen interactions with defects and impurities Hydrogen is electrically active! H 0 : rarely important H + donor H - acceptor Amphoteric impurity relative stability of H + /H - depends on Fermi level E F ε(+/0) = ε D ε(0/-) = ε A CB VB

7 Example: interstitial H in GaN E F H - H + ε(+/0) = ε D ε(+/-) ε(0/-) = ε A CB Amphoteric impurity: H + in p-type / H - in n-type Always counteracts prevailing conductivity VB First-principles calculations Density-functional theory Pseudopotentials / Atomic relaxations Applies to: Si, ; GaAs, AlAs, GaN, AlN, ; ZnSe, What about?

8 Zinc oxide devices Applications in optoelectronics Zinc oxide: typically n-type Conductivity due to electrons Cause: heavily debated Traditionally attributed to oxygen vacancies First-principles calculations: oxygen vacancies are not shallow donors! So what is the cause?

9 Hydrogen in ε(+/-) E F CB H + VB H + is the only stable charge state Phys. Rev. Lett. 85, 1012 (2000) Confirmed by more than 20 experiments to date

10 Why is different? Position of ε(+/-) in the band gap E F H - H + ε(+/-) CB VB E F H + ε(+/-) CB VB GaN Question: Why is ε(+/-) so much higher in energy in?

11 Why is different? Band lineups! ε(+/-) CB VB GaN

12 Why is different? Band lineups! ε(+/-) CB VB GaN

13 Band lineups 0 E (ev) Si Ge SiC AlN GaN InN GaSb GaAs ZnSe -10 Use natural band lineups to align band structures C. G. Van de Walle, Phys. Rev. B 39, 1871 (1989)

14 Band lineups 0 E (ev) Si Ge SiC AlN GaN InN GaSb GaAs hydrogen ε(+/-) level Nature 423, 626 (2003) ZnSe

15 0-2 Band lineups E (ev) Si Ge SiC AlN GaN InN GaSb GaAs ZnSe hydrogen ε(+/-) level Nature 423, 626 (2003) P. Blöchl, Phys. Rev. B 62, 6158 (2000)

16 0-2 Band lineups E (ev) Si Ge SiC AlN GaN InN GaSb GaAs hydrogen ε(+/-) level Nature 423, 626 (2003) ZnSe C. G. Van de Walle, Phys. Rev. Lett. 85, 1012 (2000)

17 Band lineups 0 E (ev) InN H exclusively a donor Si Ge SiC AlN GaN InN GaSb GaAs hydrogen ε(+/-) level Nature 423, 626 (2003) ZnSe Experiment: Appl. Phys. Lett. 82, 592 (2003).

18 0-2 Band lineups E (ev) GaSb H exclusively an acceptor Si Ge SiC AlN GaN InN GaSb GaAs ZnSe hydrogen ε(+/-) level Nature 423, 626 (2003)

19 Band lineups 0 E (ev) Si Ge SiC AlN GaN InN GaSb GaAs hydrogen ε(+/-) level Nature 423, 626 (2003) ZnSe

20 Band lineups 0 E (ev) Si Ge SiC -8 AlN -10

21 Band lineups 0 E (ev) Si Ge SiC -8 AlN In 2 O 3 TiO 2 HfO 2 ZrO 2-10 SnO 2

22 0-2 Band lineups E (ev) SnO 2 H exclusively a donor -4-6 Si Ge SiC -8 AlN In 2 O 3 SnO 2 TiO 2 HfO 2 ZrO 2-10 Transparent conductors

23 0-2 Band lineups E (ev) ZrO Si Ge SiC AlN In 2 O 3 SnO 2 TiO 2 HfO 2 ZrO 2 High-k dielectrics

24 Conclusions Hydrogen strongly interacts with defects and impurities Understanding this behavior: First-principles calculations Interstitial hydrogen: basis for understanding complex interactions Towards general understanding: Universal alignment Predictive model Connection with band lineups

EFFECTS OF STOICHIOMETRY ON POINT DEFECTS AND IMPURITIES IN GALLIUM NITRIDE

EFFECTS OF STOICHIOMETRY ON POINT DEFECTS AND IMPURITIES IN GALLIUM NITRIDE EFFECTS OF STOICHIOMETRY ON POINT DEFECTS AND IMPURITIES IN GALLIUM NITRIDE C. G. VAN DE WALLE AND J. E. NORTHRUP Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 930, USA E-mail: vandewalle@parc.com

More information

Chris G. Van de Walle Materials Department, UCSB

Chris G. Van de Walle Materials Department, UCSB First-principles simulations of defects in oxides and nitrides Chris G. Van de Walle Materials Department, UCSB Acknowledgments: A. Janotti, J. Lyons, J. Varley, J. Weber (UCSB) P. Rinke (FHI), M. Scheffler

More information

Lecture 7: Extrinsic semiconductors - Fermi level

Lecture 7: Extrinsic semiconductors - Fermi level Lecture 7: Extrinsic semiconductors - Fermi level Contents 1 Dopant materials 1 2 E F in extrinsic semiconductors 5 3 Temperature dependence of carrier concentration 6 3.1 Low temperature regime (T < T

More information

ATOMIC-SCALE THEORY OF RADIATION-INDUCED PHENOMENA

ATOMIC-SCALE THEORY OF RADIATION-INDUCED PHENOMENA ATOMIC-SCALE THEORY OF RADIATION-INDUCED PHENOMENA OVERVIEW OF THE LAST FIVE YEARS AND NEW RESULTS Sokrates T. Pantelides Department of Physics and Astronomy, Vanderbilt University, Nashville, TN The theory

More information

A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced.

A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced. Semiconductor A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced. Page 2 Semiconductor materials Page 3 Energy levels

More information

Ga and P Atoms to Covalent Solid GaP

Ga and P Atoms to Covalent Solid GaP Ga and P Atoms to Covalent Solid GaP Band Gaps in Binary Group III-V Semiconductors Mixed Semiconductors Affect of replacing some of the As with P in GaAs Band Gap (ev) (nm) GaAs 1.35 919 (IR) GaP 2.24

More information

Semi-insulating SiC substrates for high frequency devices

Semi-insulating SiC substrates for high frequency devices Klausurtagung Silberbach, 19. - 21. Feb. 2002 Institut für Werkstoffwissenschaften - WW 6 Semi-insulating SiC substrates for high frequency devices Vortrag von Matthias Bickermann Semi-insulating SiC substrates

More information

Review of Semiconductor Fundamentals

Review of Semiconductor Fundamentals ECE 541/ME 541 Microelectronic Fabrication Techniques Review of Semiconductor Fundamentals Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Page 1 Semiconductor A semiconductor is an almost insulating material,

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006 UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm 2 Name: SID: Closed book. Two sheets of notes are

More information

Defects and diffusion in metal oxides: Challenges for first-principles modelling

Defects and diffusion in metal oxides: Challenges for first-principles modelling Defects and diffusion in metal oxides: Challenges for first-principles modelling Karsten Albe, FG Materialmodellierung, TU Darmstadt Johan Pohl, Peter Agoston, Paul Erhart, Manuel Diehm FUNDING: ICTP Workshop

More information

Electrons, Holes, and Defect ionization

Electrons, Holes, and Defect ionization Electrons, Holes, and Defect ionization The process of forming intrinsic electron-hole pairs is excitation a cross the band gap ( formation energy ). intrinsic electronic reaction : null e + h When electrons

More information

ALD high-k and higher-k integration on GaAs

ALD high-k and higher-k integration on GaAs ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu 1), Yiqun Liu 2), Jun-Jieh Wang 2), Roy G. Gordon 2), and Peide D. Ye 1)* 1) School of Electrical and Computer Engineering, Purdue University,

More information

Effect of the High-k Dielectric/Semiconductor Interface on Electronic Properties in Ultra-thin Channels

Effect of the High-k Dielectric/Semiconductor Interface on Electronic Properties in Ultra-thin Channels Effect of the High-k Dielectric/Semiconductor Interface on Electronic Properties in Ultra-thin Channels Evan Wilson, Daniel Valencia, Mark J. W. Rodwell, Gerhard Klimeck and Michael Povolotskyi Electrical

More information

Chapter 1 Overview of Semiconductor Materials and Physics

Chapter 1 Overview of Semiconductor Materials and Physics Chapter 1 Overview of Semiconductor Materials and Physics Professor Paul K. Chu Conductivity / Resistivity of Insulators, Semiconductors, and Conductors Semiconductor Elements Period II III IV V VI 2 B

More information

EE143 Fall 2016 Microfabrication Technologies. Evolution of Devices

EE143 Fall 2016 Microfabrication Technologies. Evolution of Devices EE143 Fall 2016 Microfabrication Technologies Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1-1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) 1-2 1 Why

More information

LN 3 IDLE MIND SOLUTIONS

LN 3 IDLE MIND SOLUTIONS IDLE MIND SOLUTIONS 1. Let us first look in most general terms at the optical properties of solids with band gaps (E g ) of less than 4 ev, semiconductors by definition. The band gap energy (E g ) can

More information

EECS143 Microfabrication Technology

EECS143 Microfabrication Technology EECS143 Microfabrication Technology Professor Ali Javey Introduction to Materials Lecture 1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) Why Semiconductors? Conductors e.g

More information

Pakpoom Reunchan. Curriculum Vitae

Pakpoom Reunchan. Curriculum Vitae Pakpoom Reunchan Curriculum Vitae Department of Physics Faculty of Science, Kasetsart University Bangkok Thailand 10900 E-mail: p.reunchan@gmail.com pakpoom.r@ku.ac.th Tel: (+66) 2-562-5555 #3048 Educations

More information

Chris G. Van de Walle a) Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304

Chris G. Van de Walle a) Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304 JOURNAL OF APPLIED PHYSICS VOLUME 95, NUMBER 8 15 APRIL 2004 APPLIED PHYSICS REVIEWS First-principles calculations for defects and impurities: Applications to III-nitrides Chris G. Van de Walle a) Palo

More information

Quantum Mechanical Simulation for Ultra-thin High-k Gate Dielectrics Metal Oxide Semiconductor Field Effect Transistors

Quantum Mechanical Simulation for Ultra-thin High-k Gate Dielectrics Metal Oxide Semiconductor Field Effect Transistors Mechanical Simulation for Ultra-thin High-k Gate Dielectrics Metal Oxide Semiconductor Field Effect Transistors Shih-Ching Lo 1, Yiming Li 2,3, and Jyun-Hwei Tsai 1 1 National Center for High-Performance

More information

Basic cell design. Si cell

Basic cell design. Si cell Basic cell design Si cell 1 Concepts needed to describe photovoltaic device 1. energy bands in semiconductors: from bonds to bands 2. free carriers: holes and electrons, doping 3. electron and hole current:

More information

MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University

MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University Practice Final Exam 1 Read the questions carefully Label all figures

More information

Quantification of Trap State Densities at High-k/III-V Interfaces

Quantification of Trap State Densities at High-k/III-V Interfaces Quantification of Trap State Densities at High-k/III-V Interfaces Roman Engel-Herbert*, Yoontae Hwang, and Susanne Stemmer Materials Department, University of California, Santa Barbara *now at Penn State

More information

NITROGEN CONTAINING ULTRA THIN SiO 2 FILMS ON Si OBTAINED BY ION IMPLANTATION

NITROGEN CONTAINING ULTRA THIN SiO 2 FILMS ON Si OBTAINED BY ION IMPLANTATION NITROGEN CONTAINING ULTRA THIN SiO 2 FILMS ON Si OBTAINED BY ION IMPLANTATION Sashka Petrova Alexandrova 1, Evgenia Petrova Valcheva 2, Rumen Georgiev Kobilarov 1 1 Department of Applied Physics, Technical

More information

2. Point Defects. R. Krause-Rehberg

2. Point Defects. R. Krause-Rehberg R. Krause-Rehberg 2. Point Defects (F-center in NaCl) 2.1 Introduction 2.2 Classification 2.3 Notation 2.4 Examples 2.5 Peculiarities in Semiconductors 2.6 Determination of Structure and Concentration

More information

Challenges and Opportunities. Prof. J. Raynien Kwo 年

Challenges and Opportunities. Prof. J. Raynien Kwo 年 Nanoelectronics Beyond Si: Challenges and Opportunities Prof. J. Raynien Kwo 年 立 Si CMOS Device Scaling Beyond 22 nm node High κ,, Metal gates, and High mobility channel 1947 First Transistor 1960 1960

More information

Characterization of reliability-limiting defects in 4H-SiC MOSFETs using density functional (atomistic) simulations

Characterization of reliability-limiting defects in 4H-SiC MOSFETs using density functional (atomistic) simulations Characterization of reliability-limiting defects in 4H-SiC MOSFETs using density functional (atomistic) simulations Dev Ettisserry ARL Workshop 14, 15 August, 2014 UMD, College Park Advised by : Prof.

More information

Novel High-Efficiency Crystalline-Si-Based Compound. Heterojunction Solar Cells: HCT (Heterojunction with Compound. Thin-layer)

Novel High-Efficiency Crystalline-Si-Based Compound. Heterojunction Solar Cells: HCT (Heterojunction with Compound. Thin-layer) Electronic Supplementary Material (ESI) for Physical Chemistry Chemical Physics. This journal is the Owner Societies 2014 Supplementary Information for Novel High-Efficiency Crystalline-Si-Based Compound

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006 UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm I Name: Closed book. One sheet of notes is allowed.

More information

Atomic configuration of boron pile-up at the Si/SiO 2 interface

Atomic configuration of boron pile-up at the Si/SiO 2 interface Atomic configuration of boron pile-up at the Si/SiO 2 interface Masayuki Furuhashi, a) Tetsuya Hirose, Hiroshi Tsuji, Masayuki Tachi, and Kenji Taniguchi Department of Electronics and Information Systems,

More information

Modelowanie Nanostruktur

Modelowanie Nanostruktur Chair of Condensed Matter Physics Institute of Theoretical Physics Faculty of Physics, Universityof Warsaw Modelowanie Nanostruktur, 2012/2013 Jacek A. Majewski Semester Zimowy 2012/2013 Wykad Modelowanie

More information

COTS BTS Testing and Improved Reliability Test Methods

COTS BTS Testing and Improved Reliability Test Methods 2015 August 2015 SiC MOS Program Review COTS BTS Testing and Improved Reliability Test Methods Aivars Lelis, Ron Green, Dan Habersat, and Mooro El Outline Lelis (and Green) : COTS BTS results Standard

More information

Diffusion in Extrinsic Silicon and Silicon Germanium

Diffusion in Extrinsic Silicon and Silicon Germanium 1 Diffusion in Extrinsic Silicon and Silicon Germanium SFR Workshop & Review November 14, 2002 Hughes Silvestri, Ian Sharp, Hartmut Bracht, and Eugene Haller Berkeley, CA 2002 GOAL: Diffusion measurements

More information

Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High Electron Mobility Transistors on a Nanometer Scale

Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High Electron Mobility Transistors on a Nanometer Scale Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High Electron Mobility Transistors on a Nanometer Scale Chung-Han Lin Department of Electrical & Computer Engineering, The Ohio State

More information

Chris G. Van de Walle

Chris G. Van de Walle Complex oxide interfaces Chris G. Van de Walle Anderson Janotti, Lars Bjaalie, Luke Gordon, Burak Himmetoglu, K. Krishnaswamy Materials Department, University of California, Santa Barbara ES213 June 11-14,

More information

Electrical measurements of voltage stressed Al 2 O 3 /GaAs MOSFET

Electrical measurements of voltage stressed Al 2 O 3 /GaAs MOSFET Microelectronics Reliability xxx (2007) xxx xxx www.elsevier.com/locate/microrel Electrical measurements of voltage stressed Al 2 O 3 /GaAs MOSFET Z. Tang a, P.D. Ye b, D. Lee a, C.R. Wie a, * a Department

More information

Traps in MOCVD n-gan Studied by Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy

Traps in MOCVD n-gan Studied by Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy Traps in MOCVD n-gan Studied by Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy Yutaka Tokuda Department of Electrical and Electronics Engineering, Aichi Institute of Technology,

More information

Semiconductors. Semiconductors also can collect and generate photons, so they are important in optoelectronic or photonic applications.

Semiconductors. Semiconductors also can collect and generate photons, so they are important in optoelectronic or photonic applications. Semiconductors Semiconducting materials have electrical properties that fall between true conductors, (like metals) which are always highly conducting and insulators (like glass or plastic or common ceramics)

More information

J. Price, 1,2 Y. Q. An, 1 M. C. Downer 1 1 The university of Texas at Austin, Department of Physics, Austin, TX

J. Price, 1,2 Y. Q. An, 1 M. C. Downer 1 1 The university of Texas at Austin, Department of Physics, Austin, TX Understanding process-dependent oxygen vacancies in thin HfO 2 /SiO 2 stacked-films on Si (100) via competing electron-hole injection dynamic contributions to second harmonic generation. J. Price, 1,2

More information

First-principles studies of beryllium doping of GaN

First-principles studies of beryllium doping of GaN PHYSICAL REVIEW B, VOLUME 63, 24525 First-principles studies of beryllium doping of GaN Chris G. Van de Walle * and Sukit Limpijumnong Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto,

More information

Lecture 20: Semiconductor Structures Kittel Ch 17, p , extra material in the class notes

Lecture 20: Semiconductor Structures Kittel Ch 17, p , extra material in the class notes Lecture 20: Semiconductor Structures Kittel Ch 17, p 494-503, 507-511 + extra material in the class notes MOS Structure Layer Structure metal Oxide insulator Semiconductor Semiconductor Large-gap Semiconductor

More information

Semiconductor-Detectors

Semiconductor-Detectors Semiconductor-Detectors 1 Motivation ~ 195: Discovery that pn-- junctions can be used to detect particles. Semiconductor detectors used for energy measurements ( Germanium) Since ~ 3 years: Semiconductor

More information

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Lec 6: September 14, 2015 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable

More information

Resonant photo-ionization of point defects in HfO 2 thin films observed by second-harmonic generation.

Resonant photo-ionization of point defects in HfO 2 thin films observed by second-harmonic generation. Optics of Surfaces & Interfaces - VIII September 10 th, 2009 Resonant photo-ionization of point defects in HfO 2 thin films observed by second-harmonic generation. Jimmy Price and Michael C. Downer Physics

More information

EECS130 Integrated Circuit Devices

EECS130 Integrated Circuit Devices EECS130 Integrated Circuit Devices Professor Ali Javey 8/30/2007 Semiconductor Fundamentals Lecture 2 Read: Chapters 1 and 2 Last Lecture: Energy Band Diagram Conduction band E c E g Band gap E v Valence

More information

New Material Design and Device Simulation Tool. Dr. Gong Kui HZWTECH

New Material Design and Device Simulation Tool. Dr. Gong Kui HZWTECH New Material Design and Device Simulation Tool Dr. Gong Kui HZWTECH 鸿之微科技 ( 上海 ) 股份有限公司 HONGZHIWEI TECHNOLOGY(SHANGHAI) CO.,LTD outline Atomistic-TCAD:new devices simulation tool Applications of Atomistic-TCAD

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 23, 2018 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2018 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor

More information

Enhancement of Ionization Efficiency of Acceptors by Their Excited States in Heavily Doped p-type GaN and Wide Bandgap Semiconductors

Enhancement of Ionization Efficiency of Acceptors by Their Excited States in Heavily Doped p-type GaN and Wide Bandgap Semiconductors Enhancement of Ionization Efficiency of cceptors by Their Excited States in Heavily Doped p-type GaN and Wide Bandgap Semiconductors Hideharu Matsuura Osaka Electro-Communication University 2004 Joint

More information

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Lec 6: September 18, 2017 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable

More information

The effect of point defects in zircon

The effect of point defects in zircon aterials for nuclear waste immobilization: The effect of point defects in zircon iguel Pruneda Department of Earth Sciences University of Centre for Ceramic Immobilisation Radiation damage process α-decay

More information

Structure, energetics, and vibrational properties of Si-H bond dissociation in silicon

Structure, energetics, and vibrational properties of Si-H bond dissociation in silicon PHYSICAL REVIEW B VOLUME 59, NUMBER 20 15 MAY 1999-II Structure, energetics, and vibrational properties of Si-H bond dissociation in silicon Blair Tuttle Department of Physics, University of Illinois,

More information

Dopant and Self-Diffusion in Semiconductors: A Tutorial

Dopant and Self-Diffusion in Semiconductors: A Tutorial Dopant and Self-Diffusion in Semiconductors: A Tutorial Eugene Haller and Hughes Silvestri MS&E, UCB and LBNL FLCC Tutorial 1/26/04 1 FLCC Outline Motivation Background Fick s Laws Diffusion Mechanisms

More information

Searching for functional oxides using high-throughput ab initio screening

Searching for functional oxides using high-throughput ab initio screening 11 th Korea-US Forum on Nanotechnology Searching for functional oxides using high-throughput ab initio screening Kanghoon Yim, Joohee Lee, Yong Youn, Kyu-hyun Lee, and Seungwu Han Materials Theory and

More information

Frequency dispersion effect and parameters. extraction method for novel HfO 2 as gate dielectric

Frequency dispersion effect and parameters. extraction method for novel HfO 2 as gate dielectric 048 SCIENCE CHINA Information Sciences April 2010 Vol. 53 No. 4: 878 884 doi: 10.1007/s11432-010-0079-8 Frequency dispersion effect and parameters extraction method for novel HfO 2 as gate dielectric LIU

More information

Wide Bandgap Semiconductor Research at Mississippi State University

Wide Bandgap Semiconductor Research at Mississippi State University Wide Bandgap Semiconductor Research at Mississippi State University Dr. Yaroslav Koshka Associate Professor Department of Electrical and Computer Engineering Mississippi State University Presentation Outline

More information

Lecture 3: Semiconductors and recombination. Prof Ken Durose, University of Liverpool

Lecture 3: Semiconductors and recombination. Prof Ken Durose, University of Liverpool Lecture 3: Semiconductors and recombination Prof Ken Durose, University of Liverpool Outline semiconductors and 1. Band gap representations 2. Types of semiconductors -Adamantine semiconductors (Hume -Rothery

More information

Chapter 2. Semiconductor Fundamentals

Chapter 2. Semiconductor Fundamentals hapter Semiconductor Fundamentals.0 Introduction There are altogether 9 types of natural occurring elements, of which only few types are important in semiconductor physics and technology. They are the

More information

Semiconductors. SEM and EDAX images of an integrated circuit. SEM EDAX: Si EDAX: Al. Institut für Werkstoffe der ElektrotechnikIWE

Semiconductors. SEM and EDAX images of an integrated circuit. SEM EDAX: Si EDAX: Al. Institut für Werkstoffe der ElektrotechnikIWE SEM and EDAX images of an integrated circuit SEM EDAX: Si EDAX: Al source: [Cal 99 / 605] M&D-.PPT, slide: 1, 12.02.02 Classification semiconductors electronic semiconductors mixed conductors ionic conductors

More information

Theoretical study on the possibility of bipolar doping of ScN

Theoretical study on the possibility of bipolar doping of ScN Theoretical study on the possibility of bipolar doping of ScN G. Soto, M.G. Moreno-Armenta and A. Reyes-Serrato Centro de Ciencias de la Materia Condensada, Universidad Nacional Autónoma de México, Apartado

More information

Feature-level Compensation & Control. Process Integration September 15, A UC Discovery Project

Feature-level Compensation & Control. Process Integration September 15, A UC Discovery Project Feature-level Compensation & Control Process Integration September 15, 2005 A UC Discovery Project Current Milestones Si/Ge-on-insulator and Strained Si-on-insulator Substrate Engineering (M28 YII.13)

More information

Lecture 1. Introduction to Electronic Materials. Reading: Pierret 1.1, 1.2, 1.4,

Lecture 1. Introduction to Electronic Materials. Reading: Pierret 1.1, 1.2, 1.4, Lecture 1 Introduction to Electronic Materials Reading: Pierret 1.1, 1.2, 1.4, 2.1-2.6 Atoms to Operational Amplifiers The goal of this course is to teach the fundamentals of non-linear circuit elements

More information

Semiconductor Fundamentals. Professor Chee Hing Tan

Semiconductor Fundamentals. Professor Chee Hing Tan Semiconductor Fundamentals Professor Chee Hing Tan c.h.tan@sheffield.ac.uk Why use semiconductor? Microprocessor Transistors are used in logic circuits that are compact, low power consumption and affordable.

More information

smal band gap Saturday, April 9, 2011

smal band gap Saturday, April 9, 2011 small band gap upper (conduction) band empty small gap valence band filled 2s 2p 2s 2p hybrid (s+p)band 2p no gap 2s (depend on the crystallographic orientation) extrinsic semiconductor semi-metal electron

More information

Chemistry Instrumental Analysis Lecture 8. Chem 4631

Chemistry Instrumental Analysis Lecture 8. Chem 4631 Chemistry 4631 Instrumental Analysis Lecture 8 UV to IR Components of Optical Basic components of spectroscopic instruments: stable source of radiant energy transparent container to hold sample device

More information

Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs

Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs Feng Gao 1,2, Bin Lu 2, Carl V. Thompson 1, Jesús del Alamo 2, Tomás Palacios 2 1. Department of Materials Science and

More information

Comparison of Ultra-Thin InAs and InGaAs Quantum Wells and Ultra-Thin-Body Surface-Channel MOSFETs

Comparison of Ultra-Thin InAs and InGaAs Quantum Wells and Ultra-Thin-Body Surface-Channel MOSFETs Comparison of Ultra-Thin InAs and InGaAs Quantum Wells and Ultra-Thin-Body Surface-Channel MOSFETs Cheng-Ying Huang 1, Sanghoon Lee 1, Evan Wilson 3, Pengyu Long 3, Michael Povolotskyi 3, Varistha Chobpattana

More information

KATIHAL FİZİĞİ MNT-510

KATIHAL FİZİĞİ MNT-510 KATIHAL FİZİĞİ MNT-510 YARIİLETKENLER Kaynaklar: Katıhal Fiziği, Prof. Dr. Mustafa Dikici, Seçkin Yayıncılık Katıhal Fiziği, Şakir Aydoğan, Nobel Yayıncılık, Physics for Computer Science Students: With

More information

Energy position of the active near-interface traps in metal oxide semiconductor field-effect transistors on 4H SiC

Energy position of the active near-interface traps in metal oxide semiconductor field-effect transistors on 4H SiC Energy position of the active near-interface traps in metal oxide semiconductor field-effect transistors on 4H SiC Author Haasmann, Daniel, Dimitrijev, Sima Published 2013 Journal Title Applied Physics

More information

NBTI and Spin Dependent Charge Pumping in 4H-SiC MOSFETs

NBTI and Spin Dependent Charge Pumping in 4H-SiC MOSFETs NBTI and Spin Dependent Charge Pumping in 4H-SiC MOSFETs Mark A. Anders, Patrick M. Lenahan, Pennsylvania State University Aivars Lelis, US Army Research Laboratory Energy Deviations from the resonance

More information

GaN based transistors

GaN based transistors GaN based transistors S FP FP dielectric G SiO 2 Al x Ga 1-x N barrier i-gan Buffer i-sic D Transistors "The Transistor was probably the most important invention of the 20th Century The American Institute

More information

Theoretical study of defects in silicon carbide and at the silicon dioxide interface

Theoretical study of defects in silicon carbide and at the silicon dioxide interface Theoretical study of defects in silicon carbide and at the silicon dioxide interface Ph.D. Thesis Tamás Hornos Supervisor: Dr. Ádám Gali Budapest University of Technology and Economics Department of Atomic

More information

Semiconductors 1. Explain different types of semiconductors in detail with necessary bond diagrams. Intrinsic semiconductors:

Semiconductors 1. Explain different types of semiconductors in detail with necessary bond diagrams. Intrinsic semiconductors: Semiconductors 1. Explain different types of semiconductors in detail with necessary bond diagrams. There are two types of semi conductors. 1. Intrinsic semiconductors 2. Extrinsic semiconductors Intrinsic

More information

JUNCTION LEAKAGE OF A SiC-BASED NON-VOLATILE RANDOM ACCESS MEMORY (NVRAM) K. Y. Cheong ABSTRACT INTRODUCTION

JUNCTION LEAKAGE OF A SiC-BASED NON-VOLATILE RANDOM ACCESS MEMORY (NVRAM) K. Y. Cheong ABSTRACT INTRODUCTION JUNCTION LEAKAGE OF A SiC-BASED NON-VOLATILE RANDOM ACCESS MEMORY (NVRAM) K. Y. Cheong Electronic Materials Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti

More information

EE130: Integrated Circuit Devices

EE130: Integrated Circuit Devices EE130: Integrated Circuit Devices (online at http://webcast.berkeley.edu) Instructor: Prof. Tsu-Jae King (tking@eecs.berkeley.edu) TA s: Marie Eyoum (meyoum@eecs.berkeley.edu) Alvaro Padilla (apadilla@eecs.berkeley.edu)

More information

Semiconductor Physics. Lecture 3

Semiconductor Physics. Lecture 3 Semiconductor Physics Lecture 3 Intrinsic carrier density Intrinsic carrier density Law of mass action Valid also if we add an impurity which either donates extra electrons or holes the number of carriers

More information

Fundamentals of Nanoelectronics: Basic Concepts

Fundamentals of Nanoelectronics: Basic Concepts Fundamentals of Nanoelectronics: Basic Concepts Sławomir Prucnal FWIM Page 1 Introduction Outline Electronics in nanoscale Transport Ohms law Optoelectronic properties of semiconductors Optics in nanoscale

More information

Introduction to Engineering Materials ENGR2000. Dr.Coates

Introduction to Engineering Materials ENGR2000. Dr.Coates Introduction to Engineering Materials ENGR2000 Chapter 18: Electrical Properties Dr.Coates 18.2 Ohm s Law V = IR where R is the resistance of the material, V is the voltage and I is the current. l R A

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 24, 2017 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2017 Khanna Lecture Outline! Semiconductor Physics " Band gaps "

More information

How a single defect can affect silicon nano-devices. Ted Thorbeck

How a single defect can affect silicon nano-devices. Ted Thorbeck How a single defect can affect silicon nano-devices Ted Thorbeck tedt@nist.gov The Big Idea As MOS-FETs continue to shrink, single atomic scale defects are beginning to affect device performance Gate Source

More information

Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices

Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices Applied Surface Science 212 213 (2003) 563 569 Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices Gerald Lucovsky *, Gilbert B. Rayner

More information

Charge Extraction. Lecture 9 10/06/2011 MIT Fundamentals of Photovoltaics 2.626/2.627 Fall 2011 Prof. Tonio Buonassisi

Charge Extraction. Lecture 9 10/06/2011 MIT Fundamentals of Photovoltaics 2.626/2.627 Fall 2011 Prof. Tonio Buonassisi Charge Extraction Lecture 9 10/06/2011 MIT Fundamentals of Photovoltaics 2.626/2.627 Fall 2011 Prof. Tonio Buonassisi 2.626/2.627 Roadmap You Are Here 2.626/2.627: Fundamentals Every photovoltaic device

More information

! Previously: simple models (0 and 1 st order) " Comfortable with basic functions and circuits. ! This week and next (4 lectures)

! Previously: simple models (0 and 1 st order)  Comfortable with basic functions and circuits. ! This week and next (4 lectures) ESE370: CircuitLevel Modeling, Design, and Optimization for Digital Systems Lec 6: September 14, 2015 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 29, 2019 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2019 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor

More information

Defects in Semiconductors

Defects in Semiconductors Defects in Semiconductors Mater. Res. Soc. Symp. Proc. Vol. 1370 2011 Materials Research Society DOI: 10.1557/opl.2011. 771 Electronic Structure of O-vacancy in High-k Dielectrics and Oxide Semiconductors

More information

Ch. 2: Energy Bands And Charge Carriers In Semiconductors

Ch. 2: Energy Bands And Charge Carriers In Semiconductors Ch. 2: Energy Bands And Charge Carriers In Semiconductors Discrete energy levels arise from balance of attraction force between electrons and nucleus and repulsion force between electrons each electron

More information

! Previously: simple models (0 and 1 st order) " Comfortable with basic functions and circuits. ! This week and next (4 lectures)

! Previously: simple models (0 and 1 st order)  Comfortable with basic functions and circuits. ! This week and next (4 lectures) ESE370: CircuitLevel Modeling, Design, and Optimization for Digital Systems Lec 6: September 18, 2017 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable

More information

Investigation of Buffer Traps in AlGaN/GaN Heterostructure Field-Effect Transistors Using a Simple Test Structure

Investigation of Buffer Traps in AlGaN/GaN Heterostructure Field-Effect Transistors Using a Simple Test Structure http://dx.doi.org/10.5573/jsts.2014.14.4.478 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.14, NO.4, AUGUST, 2014 Investigation of Buffer Traps in AlGaN/GaN Heterostructure Field-Effect Transistors

More information

Single ion implantation for nanoelectronics and the application to biological systems. Iwao Ohdomari Waseda University Tokyo, Japan

Single ion implantation for nanoelectronics and the application to biological systems. Iwao Ohdomari Waseda University Tokyo, Japan Single ion implantation for nanoelectronics and the application to biological systems Iwao Ohdomari Waseda University Tokyo, Japan Contents 1.History of single ion implantation (SII) 2.Novel applications

More information

Conductivity and Semi-Conductors

Conductivity and Semi-Conductors Conductivity and Semi-Conductors J = current density = I/A E = Electric field intensity = V/l where l is the distance between two points Metals: Semiconductors: Many Polymers and Glasses 1 Electrical Conduction

More information

Defects in materials. Manish Jain. July 8, Department of Physics Indian Institute of Science Bangalore 1/46

Defects in materials. Manish Jain. July 8, Department of Physics Indian Institute of Science Bangalore 1/46 1/46 Defects in materials Manish Jain Department of Physics Indian Institute of Science Bangalore July 8, 2014 Outline 2/46 Motivation. Computational methods. Defects in oxides. Why are defects challenging?

More information

Solid State Device Fundamentals

Solid State Device Fundamentals Solid State Device Fundamentals ENS 345 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 Office 4N101b 1 The free electron model of metals The free electron model

More information

Electric-Field Induced F - Migration in Self-Aligned InGaAs MOSFETs and Mitigation

Electric-Field Induced F - Migration in Self-Aligned InGaAs MOSFETs and Mitigation Electric-Field Induced F - Migration in Self-Aligned InGaAs MOSFETs and Mitigation X. Cai, J. Lin, D. A. Antoniadis and J. A. del Alamo Microsystems Technology Laboratories, MIT December 5, 2016 Sponsors:

More information

Electron Energy, E E = 0. Free electron. 3s Band 2p Band Overlapping energy bands. 3p 3s 2p 2s. 2s Band. Electrons. 1s ATOM SOLID.

Electron Energy, E E = 0. Free electron. 3s Band 2p Band Overlapping energy bands. 3p 3s 2p 2s. 2s Band. Electrons. 1s ATOM SOLID. Electron Energy, E Free electron Vacuum level 3p 3s 2p 2s 2s Band 3s Band 2p Band Overlapping energy bands Electrons E = 0 1s ATOM 1s SOLID In a metal the various energy bands overlap to give a single

More information

! CMOS Process Enhancements. ! Semiconductor Physics. " Band gaps. " Field Effects. ! MOS Physics. " Cut-off. " Depletion.

! CMOS Process Enhancements. ! Semiconductor Physics.  Band gaps.  Field Effects. ! MOS Physics.  Cut-off.  Depletion. ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 3, 018 MOS Transistor Theory, MOS Model Lecture Outline! CMOS Process Enhancements! Semiconductor Physics " Band gaps " Field Effects!

More information

Electrical material properties

Electrical material properties Electrical material properties U = I R Ohm s law R = ρ (l/a) ρ resistivity l length σ = 1/ρ σ conductivity A area σ = n q μ n conc. of charge carriers q their charge μ their mobility μ depends on T, defects,

More information

Course overview. Me: Dr Luke Wilson. The course: Physics and applications of semiconductors. Office: E17 open door policy

Course overview. Me: Dr Luke Wilson. The course: Physics and applications of semiconductors. Office: E17 open door policy Course overview Me: Dr Luke Wilson Office: E17 open door policy email: luke.wilson@sheffield.ac.uk The course: Physics and applications of semiconductors 10 lectures aim is to allow time for at least one

More information

Nanoelectronics. Topics

Nanoelectronics. Topics Nanoelectronics Topics Moore s Law Inorganic nanoelectronic devices Resonant tunneling Quantum dots Single electron transistors Motivation for molecular electronics The review article Overview of Nanoelectronic

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Fall Exam 1

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Fall Exam 1 UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 143 Fall 2008 Exam 1 Professor Ali Javey Answer Key Name: SID: 1337 Closed book. One sheet

More information

Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

More information

Part II Electrical Properties of Materials

Part II Electrical Properties of Materials Part II Electrical Properties of Materials Chap. 7 Electrical Conduction in Metals and Alloys Chap. 8 Semiconductors Chap. 9 9.1 Conducting Polymers and Organic Metals Polymers consist of (macro)molecules

More information