MAS Output LDO Voltage Regulator IC

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1 DA.8 MAS 2-Output LDO Voltage Regulator IC Dual Regulator: 2 15 ma Very Low Crosstalk Low Dropout: 7 mv High Ripple Rejection: 62 db Low Noise: 3 µvrms Stable with Low-ESR Output Capacitors Separate Enable/Disable Control for Both Regulators DESCRIPTION MAS is a voltage regulator IC with two low dropout voltage regulators, which both have their own enable/disable pin allowing the regulators to be turned off or on separately by pulling the particular control to low or high. Due to the low noise level of only 3 µvrms, MAS is suitable for sensitive circuits, e.g., in portable applications. In addition to the low noise level, MAS excels in dropout voltage (7 mv typical at 5 ma) and in very good crosstalk rejection. Also its ripple rejection ability of 62 db at 1 khz exceeds that of competition. FEATURES Low Noise Functionally and Pin Compatible with LP2967and LP3986 Can Be Used w/o C BYPASS, see p. 9 Auto-discharge Function Internal Thermal Shutdown Short Circuit Protection Small QFN 3x3 or Package Several Output Voltage Options Available, see Ordering Information p. 18 A wide range of values of Equivalent Series Resistance (ESR) of output capacitors can be used with MAS. This ESR range from a few mω up to a couple of Ohms combined with no minimum output current requirement makes the usage of MAS easier and low in cost. In order to save power the device goes into sleep mode when both regulators are disabled. An internal thermal protection circuit prevents the device from overheating. Also the maximum output current is internally limited. APPLICATIONS Cellular Phones Cordless Phones Accessories Pagers Battery Powered Systems Portable Systems Radio Control Systems Low Voltage Systems 1 (19)

2 DA.8 PIN CONFIGURATION QFN 3x3 8ld zzzz GVZ YWW TOP VIEW zzzz GVZ YWW Top Marking Information: zzzz = G = Green ( ) Package vz = Product Specific Code, see p. 18, Ordering Information YWW = Year Week PIN DESCRIPTION Pin Name Pin Number in and QFN Type Function VIN 1, 8 P Power Supply Voltage for Both Regulators GND 4 G Ground CTRL1 3 I Enable/Disable Pin for the First Regulator CTRL2 6 I Enable/Disable Pin for the Second Regulator BYPASS 5 I Pin for Bypass Capacitor VOUT1 2 O Output Voltage of the First Regulator VOUT2 7 O Output Voltage of the Second Regulator Exposed Pad (in QFN package) Connect exposed pad to GND for better thermal conductivity G = Ground, I = Input, O = Output, P = Power 2 (19)

3 DA.8 BLOCK DIAGRAM VIN VIN BYPASS VOLTAGE CTRL1 REFERENCE 16kΩ OVER CURRENT PROTECTION + VOUT1 OVER TEMPERATURE PROTECTION CTRL2 OVER CURRENT + VOUT2 PROTECTION GND ABSOLUTE MAXIMUM RATINGS All voltages with respect to ground. Parameter Symbol Conditions Min Max Unit Supply Voltage V IN V Voltage Range for All Pins -.3 V IN +.3 V ESD Rating HBM 2 kv Junction Temperature T Jmax +175 C (limited) Storage Temperature T S C Stresses beyond those listed may cause permanent damage to the device. The device may not operate under these conditions, but it will not be destroyed. RECOMMENDED OPERATING CONDITIONS All voltages with respect to ground. Parameter Symbol Conditions Min Max Unit Operating Junction Temperature Operating Ambient Temperature Operating Supply Voltage T J C T A C V IN V OUT(NOM) < 2.2 V 2.5 V OUT(NOM) 2.2 V V OUT(NOM) V 3 (19)

4 DA.8 ELECTRICAL CHARACTERISTICS Thermal Protection T A = -4 C to +85 C, typical values at T A = +27 C, V IN = V OUT(NOM) + 1. V, I OUT = 1. ma, C IN = 1. µf, C L = 1. µf, C BYPASS = 1 nf, Parameter Symbol Conditions Min Typ Max Unit Threshold High T H C Threshold Low T L C The hysteresis of 1 C prevents the device from turning on too soon after thermal shutdown. Control Terminal Specifications T A = -4 C to +85 C, typical values at T A = +27 C, V IN = V OUT(NOM) + 1. V, I OUT = 1. ma, C IN = 1. µf, C L = 1. µf, C BYPASS = 1 nf, Parameter Symbol Conditions Min Typ Max Unit Control Voltage OFF State ON State Control Current, one control input V CTRL I CTRL V CTRL = V IN V CTRL = V If CTRL-pin is not connected, the particular regulator is in OFF state (9 kω pull-down resistor to ground) V IN +.3 Voltage Parameters T A = -4 C to +85 C, typical values at T A = +27 C, V IN = V OUT(NOM) + 1. V, I OUT = 1. ma, C IN = 1. µf, C L = 1. µf, C BYPASS = 1 nf, Parameter Symbol Conditions Min Typ Max Unit Output Voltage Tolerance V OUT V I OUT = ma I OUT = 15 ma V OUT(NOM).5 V OUT(NOM).1 V OUT(NOM) +.5 V OUT(NOM) +.5 Dropout Voltage V DROP I OUT = 1 ma I OUT = 5 ma I OUT = 15 ma Current Parameters T A = -4 C to +85 C, typical values at T A = +27 C, V IN = V OUT(NOM) + 1. V, I OUT = 1. ma, C IN = 1. µf, C L = 1. µf, C BYPASS = 1 nf, Parameter Symbol Conditions Min Typ Max Unit Continuous Output Current I OUT 15 ma Short Circuit Current I MAX R L = Ω ma Peak Output Current I PK V OUT > 95% * V OUT(NOM) 41 ma Ground Pin Current I GND one regulator on I OUT = ma I OUT = 1 ma I OUT = 5 ma I OUT = 15 ma Ground Pin Current I GND both regulators on I OUT = ma I OUT = 1 ma I OUT = 5 ma Ground Pin Current, Sleep Mode I GND I OUT = 15 ma 41 V CTRL1,2 = V T A = 27 C.3 1. T A = 85 C V µa mv µa µa µa 4 (19)

5 DA.8 Power Dissipation T A = -4 C to +85 C, typical values at T A = +27 C, V IN = V OUT(NOM) + 1. V, I OUT = 1. ma, C IN = 1. µf, C L = 1. µf, C BYPASS = 1 nf, Parameter Symbol Conditions Min Typ Max Unit Junction to Ambient Thermal Resistance R JA thermal test board according to JESD51 (4 layers), package thermal test board according to JESD51 (4 layers), QFN 3x3 8ld package Maximum Power Dissipation P d any ambient temperature P dmax Note JA C/W TJ(MAX) TA = W R Note 1: T J(MAX) denotes maximum operating junction temperature (+125 C), T A ambient temperature, and R JA junction-to-ambient thermal resistance. Line and Load Regulation T A = -4 C to +85 C, typical values at T A = +27 C, V IN = V OUT(NOM) + 1. V, I OUT = 1. ma, C IN = 1. µf, C L = 1. µf, C BYPASS = 1 nf, Parameter Symbol Conditions Min Typ Max Unit Line Regulation V OUT(NOM) + 1 V < V IN < 5.3 V,.7 mv I OUT = 6 ma Load Regulation mv I OUT = 1. to 5 ma I OUT = 1. to 15 ma Noise and Ripple Rejection T A = -4 C to +85 C, typical values at T A = +27 C, V IN = V OUT(NOM) + 1. V, I OUT = 1. ma, C IN = 1. µf, C L = 1. µf, C BYPASS = 1 nf, Parameter Symbol Conditions Min Typ Max Unit Output Noise Voltage V RMS 3 Hz < f < 5 khz C BYPASS = 1 nf w/o C BYPASS Output Noise Voltage vs. C BYPASS Value V RMS I OUT = 5 ma 1 Hz < f < 1 khz C BYPASS = 1 nf C BYPASS = 3.3 nf C BYPASS = 1 nf Noise Density V N I OUT = 5 ma, f = 1. khz 15 PSRR I OUT = 5 ma f = 1 khz f = 1 khz f = 1 khz µvrms µvrms nv Hz db 5 (19)

6 DA.8 Dynamic Parameters T A = -4 C to +85 C, typical values at T A = +27 C, V IN = V OUT(NOM) + 1. V, I OUT = 1. ma, C IN = 1. µf, C L = 1. µf, C BYPASS = 1 nf, Parameter Symbol Conditions Min Typ Max Unit Rise Time (1% 9%) V CTRL = to 2.4 V, I OUT = 3 ma C BYPASS = 1 nf w/o C BYPASS 4 16 ms µs Rise Time (1% 9%) vs. C BYPASS Value ms V CTRL = to 2.4 V, I OUT = 5 ma C BYPASS = 1 nf C BYPASS = 3.3 nf C BYPASS = 1 nf Overshoot V CTRL = to 2.4 V, 3 5 % w/o C BYPASS Start-up Delay (from start-up to 9% * V OUT(NOM) ) one regulator on, w/o C BYPASS 26 µs CTRL overshoot 5% 9% Figure1. Definitions of rise time, overshoot and startup delay. VOUT 1% delay rise time 6 (19)

7 DA.8 TYPICAL PERFORMANCE CHARACTERISTICS T A = -4 C to +85 C, typical values at T A = +27 C, V IN = V OUT(NOM) + 1. V, I OUT = 1. ma, C IN = 1. µf, C L = 1. µf, C BYPASS = 1 nf, MAS Load regulation transient MAS Crosstalk in V OUT2 (I OUT = 5 ma, V OUT2 = 3 V) 6 Output voltage (V) Output current (ma) Output Output voltage voltage change (mv) Output current (ma) Time (5 µs/div) Time (5 µs/div) Vout Iout Vout2 Iout1 Figure 2. Typical load regulation transient. I OUT = 15 ma in 1 µs. Figure 3. Typical cross-coupling at load regulation transient. I OUT1 = 15 ma in 1 µs (Figure 2). 3.5 MAS Start-up 3.5 MAS Start-up Voltage (V) Voltage (V) Time (2 ms/div) Time (5 µs/div) Vout1 CTRL1 Vout2 CTRL2 Figure 4. Start-up. C BYPASS = 1 nf, CTRL2 = V (i.e. regulator 2 in power off). Figure 5. Start-up. C BYPASS = 1 nf, CTRL1 = 2 V (i.e. regulator 1 in power on). MAS Ground pin current, one regulator on 3 MAS Ground pin current, both regulators on 5 Ground pin current (µa) Load current (ma) T = 25 C T = 4 C T = 85 C Ground pin current (µa) Load current (ma) T = 25 C T = 4 C T = 85 C Figure 6. Current consumption vs. load current and temperature. One regulator is on. Figure 7. Current consumption vs. load current and temperature. Both regulators are on. 7 (19)

8 DA.8 TYPICAL PERFORMANCE CHARACTERISTICS T A = -4 C to +85 C, typical values at T A = +27 C, V IN = V OUT(NOM) + 1. V, I OUT = 1. ma, C IN = 1. µf, C L = 1. µf, C BYPASS = 1 nf, 25 MAS Dropout voltage vs. load current Dropout voltage (mv) Load current (ma) T = 25 C T = 4 C T = 85 C Figure 8. Dropout voltage vs. load current and temperature. 7 MAS Noise spectral density Noise spectral density (nv/hz Hz) ½ ) Frequency (khz) Figure 9. Output noise spectral density. C BYPASS = 1 nf, C L = 1 µf, I OUT = 5 ma. 7 MAS PSRR vs. frequency 6 5 PSRR (db) Frequency (khz) Cload = 1 µf Cload = 47 nf Figure 1. PSRR vs. frequency. C BYPASS = 1 nf, I OUT = 5 ma. 8 (19)

9 DA.8 APPLICATION INFORMATION VIN VIN VOLTAGE CTRL1 REFERENCE 16kΩ OVER CURRENT + VOUT1 PROTECTION OVER TEMPERATURE PROTECTION CTRL2 OVER CURRENT PROTECTION + VOUT2 BYPASS C L C L C IN C BYPASS GND Parameter Symbol Min Max Unit Note Output Capacitance Effective Series Resistance Bypass Capacitance (Optional: if C BYPASS is not used, noise performance declines, but rise time is improved. If one of the regulators is already on, C BYPASS does not have effect on rise time.) C L ESR C BYPASS Typically.1 µf 1. Ceramic and film capacitors can be used. 2. The value of C L should be smaller than or equal to the value of C IN. Ohm 1. When within this range, stable with all I OUT = ma 15 ma values. µf 1. Ceramic and film capacitors are best suited. For maximum output voltage accuracy DC leakage current through capacitor should be kept as low as possible. In any case DC leakage current must be below 1 na. Input Capacitance C IN.5 µf 1. A big enough input capacitance is needed to prevent possible impedance interactions between the supply and MAS. 2. Ceramic, tantalum, and film capacitors can be used. If a tantalum capacitor is used, it should be checked that the surge current rating is sufficient for the application. 3. In the case that the inductance between a battery and MAS is very small (<.1 µh).47 µf input capacitor is sufficient. 4. The value of C IN should not be smaller than the value of C L. Values given on the table are minimum requirements unless otherwise specified. When selecting capacitors, tolerance and temperature coefficient must be considered to make sure that the requirement is met in all potential operating conditions. 9 (19)

10 DA.8 APPLICATION INFORMATION Auto-Discharge Function MAS includes auto-discharge function, which means that a shutdown transistor turns on and discharges the output capacitor, when the particular output of MAS is turned off. Calculating Maximum Power Dissipation Maximum power dissipation of the package may limit output current or input voltage, which can be used, especially with the combination of low output voltage and high input voltage. The power dissipation can be calculated by using the formula: ( VIN VOUT )* IOUT VIN * IGND P d = + It shall not exceed the maximum power dissipation, allowed by the package: TJMAX T P A dmax = RJA where T JMAX is maximum junction temperature (T JMAX = 125 C), T A is ambient temperature and R JA is junction-to-ambient thermal resistance of the package. When assumed that: T A = +65 C, V OUT = 1.8 V, V IN = 5.3 V and used package is QFN x3 8ld the equation yields: 125 C 65 C P dmax = =.94 W 64 C/W from which can be calculated: P I dmax OUTMAX = = 268 ma VIN VOUT V IN * I GND is negligible and can be omitted. Consequently, it can be seen that under these conditions the average output current should not exceed 268 ma. 1 (19)

11 DA.8 PACKAGE OUTLINE () E1 E F Land Pattern Recommendation P Q L Gage plane R1 R A A N A1 b D e A2 A G M c b1 (b) Section A - A c1 Symbol Min Nom Max Unit A 1.1 mm A1.15 mm A mm b mm b mm c.8.23 mm c mm D 3. BSC mm E 4.9 BSC mm E1 3. BSC mm e.65 BSC mm F 4.8 mm G.65 mm L (Terminal length for mm soldering) M.41 mm N 1.2 mm P 8 Q.25 BSC mm R.7 mm R1.7 mm Dimensions do not include mold or interlead flash, protrusions or gate burrs. All measurement according to JEDEC standard MO (19)

12 E2 E2/2 L A1 A A2 A3 E/2 L2 DA.8 PACKAGE (QFN 3X3 8ld) OUTLINE / LAND PATTERN RECOMMENDATION D D/2 PIN 1 MARK QFN 3X3 DIMENSIONS -DASHED LINE DETAIL 1 - LAND PATTERN FOR QFN TERMINALS (Pitch equal or greater than.65mm) ~1 deg TOP VIEW Y1 X1 SIDE VIEW SEATING PLANE LAND PATTERN RECOMMENDATION -SOLID LINE/ GREY FILL Y2 D2 th D2/2 D2 E2 th EXPOSED PAD e BOTTOM VIEW b LAND PATTERN RECOMMENDATION Note: The exposed pad should be connected to GND layer for better thermal conductivity. Symbol Min Nom Max Unit PACKAGE DIMENSIONS A mm A mm A mm A mm b mm D 3. BSC mm D2 (exposed pad) mm E 3. BSC mm E2 (exposed pad) mm e.65 BSC mm L mm L mm LAND PATTERN RECOMMENDATION DIMENSIONS X1 (per side) mm Y mm Y mm D2th (exposed pad) >D mm E2th (exposed pad) >E mm 12 (19)

13 DA.8 SOLDERING INFORMATION For Eutectic Sn/Pb Resistance to Soldering Heat According to RSH test IEC /2 2*22 C Maximum Temperature 24 C Maximum Number of Reflow Cycles 3 Reflow profile Thermal profile parameters stated in JESD22-A113 should not be exceeded. Seating Plane Co-planarity max.8 mm Lead Finish Solder plate µm, material Sn 85% Pb 15% For and QFN 3 mm x 3 mm 8ld Resistance to Soldering Heat According to RSH test IEC /2 Maximum Temperature 26 C Maximum Number of Reflow Cycles 3 Reflow profile Thermal profile parameters stated in IPC/JEDEC J-STD-2 should not be exceeded. Lead Finish Solder plate µm, material Matte Tin 13 (19)

14 DA.8 EMBOSSED TAPE SPECIFICATIONS () P1 P2 PO DO T E W F BO A AO User Direction of Feed D1 Section A-A KO Pin 1 Designator Dimension Min/Max Unit Ao 5. ±.1 mm Bo 3.2 ±.1 mm Do /-. mm D1 1.5 min mm E 1.75 mm F 5.5 ±.5 mm Ko 1.45 ±.1 mm Po 4. mm P1 8. ±.1 mm P2 2. ±.5 mm T.3 ±.5 mm W /-.1 mm 14 (19)

15 DA.8 REEL SPECIFICATIONS () W 2 A D Tape Slot for Tape Start C N B W 1 4 Components on Each Reel Reel Material: Conductive, Plastic Antistatic or Static Dissipative Carrier Tape Material: Conductive Cover Tape Material: Static Dissipative Carrier Tape Cover Tape End Start Trailer Components Leader Dimension Min Max Unit A 33 mm B 1.5 mm C mm D 2.2 mm N 5 mm W 1 (measured at hub) mm W 2 (measured at hub) 18.4 mm Trailer 16 mm Leader 39, mm of which minimum 16 mm of empty carrier tape sealed with cover tape Weight 15 g 15 (19)

16 DA.8 EMBOSSED TAPE SPECIFICATIONS (QFN 3x3) 4. +/ / , / / / /-.2 USER FEED DIRECTION 16 (19)

17 DA.8 REEL SPECIFICATIONS (QFN 3x3) W 2 A D Tape Slot for Tape Start C N B W 1 Reel Material: Conductive, Plastic Antistatic or Static Dissipative Carrier Tape Material: Conductive Cover Tape Material: Static Dissipative Carrier Tape Cover Tape End Start Trailer Components Leader Dimension Min Max Unit A 178 mm B 1.5 mm C mm D 2.2 mm N 5 mm W 1 (measured at hub) mm W 2 (measured at hub) 14.4 mm Trailer 16 mm Leader 39, of which minimum 16 mm of empty carrier tape sealed with cover tape mm 17 (19)

18 DA.8 ORDERING INFORMATION Product Code V OUT1(NOM) V OUT2(NOM) Top Marking Package Comments MASANHH6 1.5V 2.5V MASASMN-T 1.5V 2.5V MASANSN6 1.5V 2.5V GAN AN GAN QFN8 3k/reel MASAMHH6 1.5V 2.8V MASASMM-T 1.5V 2.8V MASAMSN6 1.5V 2.8V GAM AM GAM QFN8 3k/reel MASA4HH6 1.8V 1.8V MASASM4-T 1.8V 1.8V MASA4SN6 1.8V 1.8V GA4 A4 GA4 QFN8 3k/reel MASAHHH6 1.8V 2.8V MASASMH-T 1.8V 2.8V MASAHSN6 1.8V 2.8V GAH AH GAH QFN8 3k/reel MASA3HH6 2.5V 2.5V MASASM3-T 2.5V 2.5V MASA3SN6 2.5V 2.5V GA3 A3 GA3 QFN8 3k/reel MASAJHH6 2.5V 2.8V MASASMJ-T 2.5V 2.8V MASAJSN6 2.5V 2.8V GAJ AJ GAJ QFN8 3k/reel MASA2HH6 2.8V 2.8V MASASM2-T 2.8V 2.8V MASA2SN6 2.8V 2.8V GA2 A2 GA2 QFN8 3k/reel 18 (19)

19 DA.8 MASA6HH6 3.V 3.V MASASM6-T 3.V 3.V MASA6SN6 3.V 3.V GA6 A6 GA6 QFN8 3k/reel MASA1HH6 3.3V 3.3V MASASM1-T 3.3V 3.3V MASA1SN6 3.3V 3.3V GA1 A1 GA1 QFN8 3k/reel For more voltage options contact Micro Analog Systems Oy. LOCAL DISTRIBUTOR MICRO ANALOG SYSTEMS OY CONTACTS Micro Analog Systems Oy Kamreerintie 2, P.O. Box 51 FIN-2771 Espoo, FINLAND Tel Fax NOTICE Micro Analog Systems Oy reserves the right to make changes to the products contained in this data sheet in order to improve the design or performance and to supply the best possible products. Micro Analog Systems Oy assumes no responsibility for the use of any circuits shown in this data sheet, conveys no license under any patent or other rights unless otherwise specified in this data sheet, and makes no claim that the circuits are free from patent infringement. Applications for any devices shown in this data sheet are for illustration only and Micro Analog Systems Oy makes no claim or warranty that such applications will be suitable for the use specified without further testing or modification. 19 (19)

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