In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Transcription

1 Important notice Dear ustomer, On 7 February 07 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of or use Instead of sales.addresses@ or sales.addresses@ use salesaddresses@nexperia.com ( ) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - NXP N.V. (year). ll rights reserved or Koninklijke Philips Electronics N.V. (year). ll rights reserved Should be replaced with: - Nexperia.V. (year). ll rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

2 Rev. 4 august 0 Product data sheet. General description The provides low-power, low-voltage configurable logic gate functions. The output state is determined by eight patterns of -bit input. The user can choose the logic functions MUX, ND, OR, NND, NOR, inverter and buffer. ll inputs can be connected to V or GND. This device ensures a very low static and dynamic power consumption across the entire V range from. V to. V. The is designed for logic-level translation applications with input switching levels that accept.8 V low-voltage MOS signals, while operating from either a single. V or. V supply voltage. The wide supply voltage range ensures normal operation as battery voltage drops from. V to. V. This device is fully specified for partial power-down applications using I OFF. The I OFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. Schmitt trigger inputs make the circuit tolerant to slower input rise and fall times across the entire V range.. Features and benefits Wide supply voltage range from. V to. V High noise immunity ESD protection: HM JESD-4F lass exceeds 000 V MM JESD-- exceeds 00 V DM JESD-0E exceeds 000 V Low static power consumption; I =. (maximum) Latch-up performance exceeds 00 m per JESD 78 lass II Inputs accept voltages up to. V Low noise overshoot and undershoot < 0 % of V I OFF circuitry provides partial power-down mode operation Multiple package options Specified from 40 to+8 and 40 to+

3 . Ordering information Table. Type number 4. Marking Ordering information Package Temperature range Name Description Version GW 40 to + S-88 plastic surface-mounted package; leads SOT GM 40 to + XSON plastic extremely thin small outline package; no leads; terminals; body.4 0. mm GF 40 to + XSON plastic extremely thin small outline package; no leads; terminals; body 0. mm GN 40 to + XSON extremely thin small outline package; no leads; terminals; body mm GS 40 to + XSON extremely thin small outline package; no leads; terminals; body mm SOT88 SOT89 SOT SOT0 Table. Marking Type number GW GM GF GN GS Marking code ar ar ar ar ar. Functional diagram 4 00aad987 Fig. Logic symbol ll information provided in this document is subject to legal disclaimers. NXP.V. 0. ll rights reserved. Product data sheet Rev. 4 august 0 of 0

4 . Pinning information. Pinning GND V GND 4 V 4 00aah840 GND V 4 00aah84 00aah89 Transparent top view Transparent top view Fig. Pin configuration SOT Fig. Pin configuration SOT88 Fig 4. Pin configuration SOT89, SOT and SOT0. Pin description Table. Pin description Symbol Pin Description data input GND ground (0 V) data input 4 data output V supply voltage data input 7. Functional description Table 4. Function table [] Input Output L L L H L L H H L H L L L H H L H L L H H L H L H H L H H H H L [] H = HIGH voltage level; L = LOW voltage level. ll information provided in this document is subject to legal disclaimers. NXP.V. 0. ll rights reserved. Product data sheet Rev. 4 august 0 of 0

5 7. Logic configurations Table. Function selection table Logic function Figure -input MUX (inverting) see Figure -input NND see Figure -input NOR with one input inverted see Figure 7 -input ND with one input inverted see Figure 7 -input NND with one input inverted see Figure 8 -input OR with one input inverted see Figure 8 -input NOR see Figure 9 uffer see Figure 0 Inverter see Figure V V aad99 00aad99 Fig. -input MUX (inverting) Fig. -input NND gate V V aad99 00aad994 Fig 7. -input ND gate with input inverted or -input NOR gate with input inverted Fig 8. -input OR gate with input inverted or -input NND gate with input inverted V V aad99 00aad99 Fig 9. -input NOR gate Fig 0. uffer ll information provided in this document is subject to legal disclaimers. NXP.V. 0. ll rights reserved. Product data sheet Rev. 4 august 0 4 of 0

6 V 4 00aad997 Fig. Inverter 8. Limiting values Table. Limiting values In accordance with the bsolute Maximum Rating System (IE 04). Voltages are referenced to GND (ground = 0 V). Symbol Parameter onditions Min Max Unit V supply voltage V I IK input clamping current V I <0V 0 - m V I input voltage [] V I OK output clamping current V O <0V 0 - m V O output voltage ctive mode and Power-down mode [] V I O output current V O =0 VtoV - 0 m I supply current - +0 m I GND ground current 0 - m T stg storage temperature +0 P tot total power dissipation T amb = 40 to + [] - 0 mw [] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed. [] For S-88 package: above 87. the value of P tot derates linearly with 4.0 mw/k. For XSON packages: above 8 the value of P tot derates linearly with 7.8 mw/k. 9. Recommended operating conditions Table 7. Recommended operating conditions Symbol Parameter onditions Min Max Unit V supply voltage.. V V I input voltage 0. V V O output voltage ctive mode 0 V V Power-down mode; V =0V 0. V T amb ambient temperature 40 + ll information provided in this document is subject to legal disclaimers. NXP.V. 0. ll rights reserved. Product data sheet Rev. 4 august 0 of 0

7 0. Static characteristics Table 8. Static characteristics t recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter onditions Min Typ Max Unit T amb = V T+ positive-going threshold V =. V to.7 V V voltage V =.0 V to. V V V T negative-going threshold V =. V to.7 V V voltage V =.0 V to. V V V H hysteresis voltage (V H = V T+ V T ) V =. V to.7 V V V =.0 V to. V V V OH HIGH-level output voltage V I = V T+ or V T I O = 0 ; V =. V to. V V V I O =. m; V =. V V I O =. m; V =. V V I O =.7 m; V =.0 V V I O = 4.0 m; V =.0 V. - - V V OL LOW-level output voltage V I = V T+ or V T I O = 0 ; V =. V to. V V I O =. m; V =. V V I O =. m; V =. V V I O =.7 m; V =.0 V V I O = 4.0 m; V =.0 V V I I input leakage current V I = GND to. V; V = 0 V to. V I OFF power-off leakage current V I or V O = 0 V to. V; V = 0 V I OFF additional power-off V I or V O = 0 V to. V; leakage current V =0Vto0.V I supply current V I = GND or V ; I O = 0 ; - -. V =. V to. V I input capacitance V = 0 V to. V; V I = GND or V pf O output capacitance V O = GND; V = 0 V pf T amb = 40 to +8 V T+ positive-going threshold V =. V to.7 V V voltage V =.0 V to. V V V T negative-going threshold V =. V to.7 V V voltage V =.0 V to. V V V H hysteresis voltage (V H = V T+ V T ) V =. V to.7 V V V =.0 V to. V V ll information provided in this document is subject to legal disclaimers. NXP.V. 0. ll rights reserved. Product data sheet Rev. 4 august 0 of 0

8 Table 8. Static characteristics continued t recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter onditions Min Typ Max Unit V OH HIGH-level output voltage V I = V T+ or V T V OL LOW-level output voltage V I = V T+ or V T I O = 0 ; V =. V to. V V V I O =. m; V =. V V I O =. m; V =. V V I O =.7 m; V =.0 V V I O = 4.0 m; V =.0 V. - - V I O = 0 ; V =. V to. V V I O =. m; V =. V V I O =. m; V =. V V I O =.7 m; V =.0 V V I O = 4.0 m; V =.0 V V I I input leakage current V I = GND to. V; V = 0 V to. V I OFF power-off leakage current V I or V O = 0 V to. V; V = 0 V I OFF additional power-off V I or V O = 0 V to. V; leakage current V =0Vto0.V I supply current V I = GND or V ; I O = 0 ; - -. V =. V to. V I additional supply current V =. V to.7 V; I O = 0 [] V =.0 V to. V; I O = 0 [] - - T amb = 40 to + V T+ positive-going threshold V =. V to.7 V V voltage V =.0 V to. V V V T negative-going threshold V =. V to.7 V V voltage V =.0 V to. V V V H hysteresis voltage (V H = V T+ V T ) V =. V to.7 V V V =.0 V to. V V V OH HIGH-level output voltage V I = V T+ or V T I O = 0 ; V =. V to. V V V I O =. m; V =. V V I O =. m; V =. V V I O =.7 m; V =.0 V V I O = 4.0 m; V =.0 V V V OL LOW-level output voltage V I = V T+ or V T I O = 0 ; V =. V to. V V I O =. m; V =. V V I O =. m; V =. V V I O =.7 m; V =.0 V V I O = 4.0 m; V =.0 V V I I input leakage current V I = GND to. V; V = 0 V to. V ll information provided in this document is subject to legal disclaimers. NXP.V. 0. ll rights reserved. Product data sheet Rev. 4 august 0 7 of 0

9 Table 8. Static characteristics continued t recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter onditions Min Typ Max Unit I OFF power-off leakage current V I or V O = 0 V to. V; V = 0 V I OFF additional power-off V I or V O = 0 V to. V; leakage current V =0Vto0.V I supply current V I = GND or V ; I O = 0 ; - -. V =. V to. V I additional supply current V =. V to.7 V; I O = 0 [] V =.0 V to. V; I O = 0 [] - - [] One input at 0. V or. V, other input at V or GND. [] One input at 0.4 V or. V, other input at V or GND.. Dynamic characteristics Table 9. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure. Symbol Parameter onditions 40 to + Unit Min Typ [] Max Min Max (8 ) Max ( ) V =. V to.7 V; V I =. V to.9 V t pd propagation delay,, to ; see Figure [] L = pf ns L = 0 pf ns L = pf ns L = 0 pf ns V =. V to.7 V; V I =. V to.7 V t pd propagation delay,, to ; see Figure [] L = pf ns L = 0 pf ns L = pf ns L = 0 pf ns V =. V to.7 V; V I =.0 V to. V t pd propagation delay,, to ; see Figure [] L = pf ns L = 0 pf ns L = pf ns L = 0 pf ns V =.0 V to. V; V I =. V to.9 V t pd propagation delay,, to ; see Figure [] L = pf ns L = 0 pf ns L = pf ns L = 0 pf ns ll information provided in this document is subject to legal disclaimers. NXP.V. 0. ll rights reserved. Product data sheet Rev. 4 august 0 8 of 0

10 Table 9. Dynamic characteristics continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure. Symbol Parameter onditions 40 to + Unit V =.0 V to. V; V I =. V to.7 V t pd propagation delay,, to ; see Figure [] L = pf ns L = 0 pf ns L = pf ns L = 0 pf ns V =.0 V to. V; V I =.0 V to. V t pd propagation delay,, to ; see Figure [] L = pf ns L = 0 pf ns L = pf ns L = 0 pf ns T amb = PD power dissipation f i = MHz; V I = GND to V [] capacitance V =. V to.7 V pf V =.0 V to. V pf [] ll typical values are measured at nominal V. [] t pd is the same as t PLH and t PHL [] PD is used to determine the dynamic power dissipation (P D in W). P D = PD V f i N+ ( L V f o ) where: f i = input frequency in MHz; f o = output frequency in MHz; L = output load capacitance in pf; V = supply voltage in V; N = number of inputs switching; ( L V f o ) = sum of the outputs. Min Typ [] Max Min Max (8 ) Max ( ) ll information provided in this document is subject to legal disclaimers. NXP.V. 0. ll rights reserved. Product data sheet Rev. 4 august 0 9 of 0

11 . Waveforms V I,, input V M V M GND t PHL t PLH V OH output V M V M V OL t PLH t PHL V OH output V M V M V OL 00aab9 Fig. Measurement points are given in Table 0. V OL and V OH are typical output voltage levels that occur with the output load. Input, and to output propagation delay times Table 0. Measurement points Supply voltage Output Input V V M V M V I t r = t f. V to. V 0. V 0. V I. V to. V.0 ns ll information provided in this document is subject to legal disclaimers. NXP.V. 0. ll rights reserved. Product data sheet Rev. 4 august 0 0 of 0

12 V V EXT G VI DUT VO kω RT L RL 00aac Fig. Test data is given in Table. Definitions for test circuit: R L = Load resistance. L = Load capacitance including jig and probe capacitance. R T = Termination resistance should be equal to the output impedance Z o of the pulse generator. V EXT = External voltage for measuring switching times. Test circuit for measuring switching times Table. Test data Supply voltage Load V EXT V L R [] L t PLH, t PHL t PZH, t PHZ t PZL, t PLZ. V to. V pf, 0 pf, pf and 0 pf k or M open GND V [] For measuring enable and disable times R L = k, for measuring propagation delays, setup and hold times and pulse width R L = M. ll information provided in this document is subject to legal disclaimers. NXP.V. 0. ll rights reserved. Product data sheet Rev. 4 august 0 of 0

13 . Package outline Plastic surface-mounted package; leads SOT D E X y H E v M 4 Q pin index c e b p w M L p e detail X 0 mm scale DIMENSIONS (mm are the original dimensions) UNIT bp c D E e e max H E Lp Q v w y mm OUTLINE VERSION REFERENES IE JEDE JEIT EUROPEN PROJETION ISSUE DTE SOT S Fig 4. Package outline SOT (S-88) ll information provided in this document is subject to legal disclaimers. NXP.V. 0. ll rights reserved. Product data sheet Rev. 4 august 0 of 0

14 XSON: plastic extremely thin small outline package; no leads; terminals; body x.4 x 0. mm SOT88 b L L 4x () e 4 e e x () D E terminal index area Dimensions (mm are the original dimensions) 0 mm scale Unit () b D E e e L L mm max nom min Outline version SOT Notes. Including plating thickness.. an be visible in some manufacturing processes. 0. References IE JEDE JEIT MO European projection Issue date sot88_po Fig. Package outline SOT88 (XSON) ll information provided in this document is subject to legal disclaimers. NXP.V. 0. ll rights reserved. Product data sheet Rev. 4 august 0 of 0

15 XSON: plastic extremely thin small outline package; no leads; terminals; body x x 0. mm SOT89 b L L 4 () e 4 e e () D E terminal index area DIMENSIONS (mm are the original dimensions) 0 mm scale UNIT mm max max b D E e e L Note. an be visible in some manufacturing processes L OUTLINE VERSION REFERENES IE JEDE JEIT EUROPEN PROJETION ISSUE DTE SOT Fig. Package outline SOT89 (XSON) ll information provided in this document is subject to legal disclaimers. NXP.V. 0. ll rights reserved. Product data sheet Rev. 4 august 0 4 of 0

16 XSON: extremely thin small outline package; no leads; terminals; body 0.9 x.0 x 0. mm SOT b (4 ) () L L e 4 e e ( ) () D E terminal index area Dimensions 0 0. mm scale Unit () b D E e e L L mm max nom min Outline version SOT Note. Including plating thickness.. Visible depending upon used manufacturing technology References IE JEDE JEIT European projection Issue date sot_po Fig 7. Package outline SOT (XSON) ll information provided in this document is subject to legal disclaimers. NXP.V. 0. ll rights reserved. Product data sheet Rev. 4 august 0 of 0

17 XSON: extremely thin small outline package; no leads; terminals; body.0 x.0 x 0. mm SOT0 b (4 ) () L L e 4 e e ( ) () D terminal index area E Dimensions 0 0. mm scale Unit () b D E e e L L mm max nom min Outline version SOT Note. Including plating thickness.. Visible depending upon used manufacturing technology References IE JEDE JEIT European projection Issue date sot0_po Fig 8. Package outline SOT0 (XSON) ll information provided in this document is subject to legal disclaimers. NXP.V. 0. ll rights reserved. Product data sheet Rev. 4 august 0 of 0

18 4. bbreviations Table. cronym DM MOS DUT ESD HM MM bbreviations Description harged Device Model omplementary Metal-Oxide Semiconductor Device Under Test ElectroStatic Discharge Human ody Model Machine Model. Revision history Table. Revision history Document ID Release date Data sheet status hange notice Supersedes v Product data sheet - v. Modifications: Package outline drawing of SOT88 (Figure ) modified. v. 00 Product data sheet - v. v Product data sheet - v. v Product data sheet - - ll information provided in this document is subject to legal disclaimers. NXP.V. 0. ll rights reserved. Product data sheet Rev. 4 august 0 7 of 0

19 . Legal information. Data sheet status Document status [][] Product status [] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [] Please consult the most recently issued document before initiating or completing a design. [] The term short data sheet is explained in section Definitions. [] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet short data sheet is an extract from a full data sheet with the same product type number(s) and title. short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.. Disclaimers Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. pplications pplications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. ustomers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). ustomers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). ustomer is responsible for doing all necessary testing for the customer s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the bsolute Maximum Ratings System of IE 04) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the haracteristics sections of this document is not warranted. onstant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. ll information provided in this document is subject to legal disclaimers. NXP.V. 0. ll rights reserved. Product data sheet Rev. 4 august 0 8 of 0

20 Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors specifications such use shall be solely at customer s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors standard warranty and NXP Semiconductors product specifications. Translations non-english (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions..4 Trademarks Notice: ll referenced brands, product names, service names and trademarks are the property of their respective owners. 7. ontact information For more information, please visit: For sales office addresses, please send an to: salesaddresses@nxp.com ll information provided in this document is subject to legal disclaimers. NXP.V. 0. ll rights reserved. Product data sheet Rev. 4 august 0 9 of 0

21 8. ontents General description Features and benefits Ordering information Marking Functional diagram Pinning information Pinning Pin description Functional description Logic configurations Limiting values Recommended operating conditions Static characteristics Dynamic characteristics Waveforms Package outline bbreviations Revision history Legal information Data sheet status Definitions Disclaimers Trademarks ontact information ontents Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP.V. 0. ll rights reserved. For more information, please visit: For sales office addresses, please send an to: salesaddresses@nxp.com Date of release: august 0 Document identifier: