AC-829A. Issued on Apr. 15 th 2013 (Version 1.0)
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1 Hitachi Chemical Co., Ltd. Hitachi Anisotropic Conductive Film ANISOLM AC-829A Issued on Apr. 15 th 2013 (Version 1.0) 1. Standard specification, bonding condition, storage condition and characteristic Precautions in bonding Connection reliability Insulation reliability Warpage Particle counts on bump 8 7. Reaction rate Physical properties.9 Advanced Interconnect Material R&D Dept. Material Polymer Science Sector Advanced Performance Materials Operational Headquarters Hitachi Chemical Co.,Ltd. < NOTICE: This document may wholly or partially be subject to change without notice.>
2 Storage conditions Bonding conditions IC final bonding ACF lamination Standard Specifications 1. Standard specification, bonding condition, storage condition and characteristic Item Unit AC-829A Remark Capability in interconnection circuit Connection area *1 μm Bump space *2 Electrode μm space * Min. contact area (Including Msalignment) Bump Ave.-3σ>3 Min. bump space IC Bump Electrode Glass (ITO, Metal etc.) Min. space Min. electrode space Electrode (ITO, Metal etc.) IC Bump Electrode Glass (ITO, Metal etc.) Min. space (In Misalignment) Conductive particle Size μm 3.0 Ni coated plastic particle Density pcs/mm 2 65,000 with surface treatment Thickness μm 18 Width mm 1.5 Contact us for other width request Length m 50, 100 Color - Transparent (gray) Diameter of reel core mm φ18.5 Configuration - -Cover film (Transparent PET 25um) -Particle-filled layer -Non particle-filled layer -Separator (White PET ;38μm) Temperature deg.c 60±10 Final ANISOLM temperature Pressure MPa 1 Per unit area of ANISOLM Time sec Temperature deg.c 155±10 Final ANISOLM temperature Pressure MPa Per total bump area Time sec. 5 or more Including temp increasing time Unopened months after date of manufacture when stored at -10 to 5degC. 3days at 25 degc or below Opened - and 70%RH or below. Notes: -Leave ANISOLM at room temperature for an hour before opening sealed bag. Make sure ANISOLM is not wet before using it. -Suitable bonding condition depends on specification of IC chip, glass substrate, bonding machines etc. Please contact us for detailed information. *1: Effective connection area between bump and electrode on glass after bonding. Number of particle on bump; Ave-3σ 3 (Calculated value using Hitachi's TEG) *2: Actual and minimum space of two adjacent electrode(bum to bump, Bump to electrode on glass) after bonding The values given above represent typical measurements, not guaranteed ones. 1
3 Temp. of ACF [degc] 2. Precautions in bonding 2.1 Temperature profile in main-bonding of IC chip Ex.) Bonding condition: 160 deg C/5sec. (Teflon cushion 50μm) Head setting temperature: 235deg.C Chip size: 1.7mm x 17.2mm x 0.55mmt Thickness of glass substrate: 0.5mmt Caution: Temperature should reach at more than 90% of targeting ACF temperature within first 2 seconds Time [sec] 2.2 Measurement of ANISOLM temperature Bonding head LCD Driver IC ACF Thermo couple Temperature recorder Bonding stage 2.3 Bonding head (1) In order to press equally, make sure bonding head is even and parallel to the surface. (2) Use slightly wider head than IC chip. Example; Chip width 2.0mm Head width 2.5mm 2.4 Misalignment of opposite circuits Make sure opposite circuits are well aligned and matched each other. 2
4 3. Connection reliability 3.1 Measurement (1) Used materials for measurement / Test chip : Connection area 2,500μm 2 (Connection size: 50 x 50μm, IC size: 1.7 x 17 x 0.55mm) / Test board: ITO coated glass (ITO thickness: 0.2μm, Surface resistance: 10ohm/ ) (2) Measurement of connection resistance (refer to the diagram below) / Four-probe measurement (Circuit resistance can be cancelled) / Applied current: 1mA Bump ITO electrode ACF V I = 1mA Bump ITO electrode R ACF V I = 1mA Four-probe measurement in COG interconnection 3
5 3.2 Test results (1) High temperature humidity test (85degC85%RH) Bonding condition: 145degC 60MPa 5sec (2) Thermal cycle test (-40deg.C 100deg.C) Bonding condition: 145degC 60MPa 5sec 4
6 3. Insulation reliability (Short circuit test) 3.3 Measurement (1) Used materials for measurement / Test chip : IC size; 1.9 x 15 x 0.55mm, Bump size; 26 x 100μm, Bump space; 12μm / Test board : Glass board with ITO circuit (ITO thickness; 0.2μm, Surface resistance; 10ohm/sq) / Definition of short circuit : Below 10 8 ohm (2) Measurement of insulation resistance The resistance of each test piece was measured after applying 50V DC to it for 60 seconds in an atmosphere at 23deg.C and 65%RH at points which were showed at graph during 500 hours high temperature humidity test at 85degC and 85%RH. Bump configuration 50V-1min. Bump gap: 12μm 3.4 Test results /Main bonding condition : 155deg.C/ 60MPa/ 5sec. 5
7 4. Warpage Measurement 4.1 Measurement (1) Used materials for measurement / Test chip A : IC size: 1.7 x 17.2 x 0.55mm B : IC size: 0.9 x 20.4 x 0.3mm / Test board A : Glass Size : 28 x 38 x 0.3mm B : Glass Size : 28 x 38 x 0.3mm (2) Warpage Measurement / Measuring Instrument : Laser Displacement Meter / Measuring Length : 25mm 4.2 Test Result 1 ACF: AC-829A Test chip/board : A/A Lamination condition : 70degC 1MPa 1sec Main bonding condition: degC 60MPa 5sec 6
8 4.3 Test Result 2 ACF: AC-829A Test chip/board : B/B Lamination condition : 70degC 1MPa 1sec Main bonding condition: degC 60MPa 5sec 7
9 5. Particle counts on bump (1) Used materials for measurement / Lamination condition : 60deg.C/ 1Mpa/ 1sec. / Main bonding condition : 155deg.C/ 60MPa/ 5sec. /Test chip: / Test chip A: Bump size 1,200μm 2 (12 100μm), IC size: 0.9 x 20 x 0.30mm / Test chip B: Bump size 840μm 2 (12 70μm), IC size: 0.9 x 20 x 0.30mm / Test board: Al coated glass board (2) Measurement of particle counts on bump After main bonding IC chip onto test glass, captured particles on bump was counted by optical microscope. The data at 650um 2 were calculated value based on the actual data at 1,200um 2 and 840um 2 bump size. 8
10 6. Reaction rate (1).Measuring method: Facility : FT-IR Evaluation Sample : Hitachi Chemical s Test Pieces (IC & Glass) Main-Bonding Conditions : degC, 60MPa, 5s (with 50umt Teflon Sheet) Test Method : After removing IC chips from glass boards, the hardened ACF was collected, and measured by FT-IR spectrometer. The reaction rate is calculated from the epoxy group s absorbance of IR spectra. (2).Reaction rate: Bonding time; 5sec. 7. Physical properties Item Unit AC-829A Tg *1 deg.c 160 Elastic modulus *2 GPa 1.7 C.T.E *3 ppm/degc 60 [Conditions] *1:Tanδpeak temp. *2: Elastic modulus at 40deg.C Measured with DVE; Dynamic Visco-Elastic Analyzer Test conditions: Fully cured sample, Tensile mode, 10Hz Frequency, 10degC/min *3: Measured with TMA; Thermal Mechanical Analyzer Test conditions: Fully cured sample, Tensile mode, 10degC/min, Load 5gf 9
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