# ACADAMIC CHAPTER OF SWECHA September- 2010

Save this PDF as:

Size: px
Start display at page:

## Transcription

1 Swecha Documents SF-SAC/ ECE / II-II/LM/2010 /ver. 1.0 LABMANAUALS DEPARTMENT : ECE ELECTRONIC CIRCUITS ANALYSIS LABORATORY MANUAL ACADAMIC CHAPTER OF SWECHA September- 2010

2 INDEX S.NO NAME OF THE EXPERIMENT 1 Common Emitter Amplifier 2 Common Source Amplifier 3 Two Stage RC Coupled Amplifier 4 Current Shunt Feedback Amplifier 5 Cascode Amplifier 6 Colpitts Oscillato 7 RC Phase Shift Oscillator using Transistors 8 Class-A Power Amplifier(transformer less) 9 Class -B complementary symmetry Amplifier 10 Common Base(BJT)/Common Gate (JFET) Amplifier 11 Hartley Oscillator Contributors List 1. Mr. L. Hari Venkatesh 2. Mr. A. Mahesh 3. Mr. P. Bhaskara Rao 4. Mr. T.V.S. Kishore 5. Mr. Akbar Hussain 6. Mr. Vishwanath 7. Prof. Satya Prasad Lanka 8. Dr. L. Pratap Reddy

3 Experiment- I Common Emitter Amplifier Aim: To simulate the Common Emitter Amplifier and obtain the frequency response. Design Specifications: Voltage Gain(Av)=50, Bandwidth= 1MHz, Input Impedanc =2 kohm Apparatus: Qucs Software Circuit Diagram: Design Equations: 1. Select the transistor which has higher cutoff frequency of 1MHz 2. Assume V CC =12V, V CE =V CC /2, V E =V CC /10 3. Calculate Rc from Av=-(h FE (R c 1/h oe )) / h ie, where h ie, h oe can be taken from the manufacturers datasheet of the transistor. 4. Calculate I C from V CC -I C R C -V CE -V E =0

4 5. Assume I C =I E, Calculate R E from V E = I E R E 6. S=1+ (R B /R E ), choose S=10, calculate R B =9R E, where R B =R1 R2 7. Calculate V B =V BE +V E, where V BE =0.65 V 8. Calculate the ratio R1/R2 from V B =(R2.V CC ) / (R1 + R2) 9. From steps 6 and 8 calculate R1, R2 10. Calculate emitter bypass capacitance (C E ) from X CE <= R E / Calculate input coupling capacitance (Ci )from X Ci <= Z i /10, where Z i =R B h ie 12. Calculate output coupling capacitance (C o ) from X Co <= Z o /10, where Z o =R c R L Procedure: 1. Connect the circuit as per the circuit diagram 2. Set the properties of components as per the components properties sheet 3. Place the transient simulation, d.c simulation and a.c simulations on editor. 4. Set the simulation properties 5. Simulate the circuit 6. Place the cartesian diagram and set the properties. 7. Note down the the graph. Model Graphs:

5 Result: 1. Gain= 2. Lower Cutoff Frequency f L = 3. Upper Cutoff Frequency f H = 4. Bandwidth= f H - f L 5. Input Impedance=

6 Component Properties sheet SNO Component Name Value 1 R 1 13 kohm 2 R kohm 3 R s 600 ohm 4 R c 820 ohm 5 R E 200 ohm 6 R L 10 kohm 7 C i 10 uf 8 C uf 9 C e 220 uf 10 Transistor Q 1 BC107A 11 Power supply V CC 12 V 12 Input Voltage Source V s 15 mv,1 khz

7 Simulation Properties Sheet Transient Simulation: Sweep Parameter : time Type: linear Start: 0 // Starting time of analysis // Stop: 2ms // Stop time of analysis // Step: e-06 // Step Size or incrementing value// Number: 1111 // Number of points in the graphs// AC Simulation: Sweep Parameter : frequency Type: logarithmic Start: 10Hz // Starting frequency of analysis // Stop: 10MHz // Stop frequency of analysis // Points Per Decade: 10 Number: 100 // Number of points in the graphs// DC Simulation: No changes are required

8 Experiment- 2 Common Source Amplifier Aim: To simulate the Common Source Amplifier and obtain the frequency response. Design Specifications: AV=28dB, BW=1MHz, Apparatus: Qucs Software Circuit Diagram: Design Equations: 1. Select the JFET which has higher cutoff frequency of 1MHz 2. Assume V DD =12V, I D = 1mA 3. Calculate V DS(min) =V P + 1 V GS 4. Calculate V S =(V DD -V DS(min) ) / 2 5. Calculate R S =R D =V S /I D 6. V R2 =V G = V S -V GS 7. V R1 =V DD -V G

9 8. Assume R 2 =1Mohm, Calculate R1=V R1 R 2 / V R2, R GS =R 1 R 2 9. g m0 =2I DSS / V P, g m =g m0 [1-V GS /V P ], r m =1/g m 10. A V =-R D /r m 11. Xci<=R GS /10, X C0 <=(R D R L )/10, X CS <=R S /10 Procedure: 1. Connect the circuit as per the circuit diagram 2. Set the properties of components as per the components properties sheet 3. Place the transient simulation, d.c simulation and a.c simulations on editor. 4. Set the simulation properties 5. Simulate the circuit 6. Place the cartesian diagram and set the properties. 7. Note down the the graph. Model Graphs: Result: 1. Voltage gain= 2. Bandwidth=

10 Component Properties sheet SNO Component Name Value 1 R Mohm 2 R 2 1 Mohm 3 R a 600 ohm 4 R D 5.1 kohm 5 R S 5.1 kohm 6 R L 10 kohm 7 C i uf 8 C 0 10 uf 9 C s 10 uf 10 Transistor Q1 J2N4861_1 11 Power supply V DD 12 V 12 Input Voltage Source V a 20 mv,1 khz

11 Simulation Properties Sheet Transient Simulation: Sweep Parameter : time Type: linear Start: 0 // Starting time of analysis // Stop: 2ms // Stop time of analysis // Step: e-06 // Step Size or incrementing value// Number: 1111 // Number of points in the graphs// AC Simulation: Sweep Parameter : frequency Type: logarithmic Start: 10Hz // Starting frequency of analysis // Stop: 100MHz // Stop frequency of analysis // Points Per Decade: 10 Number: 100 // Number of points in the graphs// DC Simulation: No changes are required

12 Experiment- 3 Two Stage RC Coupled Ampifier Aim: To simulate the Two Stage RC Coupled Amplifier and obtain the frequency response. Design Specifications: Voltage Gain(Av1)=36dB, Voltage Gain(Av2)=11dB, Bandwidth= 700kHz, Input Impedanc =2 kohm Apparatus: Qucs Software Circuit Diagram: Design Equations: 1. Select the transistors which has higher cutoff frequency of 1MHz Design for Second Stage 2. Choose I C2 =5mA, Vcc=12, V CE2 = Vcc /2, V E2 = Vcc/10, S=5 3. Calculate R E2 =V E2 / I C2 4. Calculate R C from V CC -I C2 R C2 -V CE2 -V E2 =0

13 5. R Leff2 =R C2 R L 6. CalculateV B2 from V B2 =V BE2 +V E2 7. Calculate R 12, R 22 from S=1+R B2 /R E, V B2 =V CC (R 2 ) / (R 1 +R 2 ) 8. Z i2 =R B2 [h ie2 +(1+h fe2 )R E2 ] 9. AV2=-h fe2 R Leff / (h ie2 +(1+h fe2 )R E2 ) Design for First Stage 10. Choose I C1 =1mA, Vcc=12, V CE1 = Vcc /2, V E1 = Vcc/10, S= Calculate R E1, R C1, 12. R Leff1 =R C1 Z i2 13. Z i1 =h ie R B1 14. A V1 =-h fe1 R Leff1 / Z i1 Calculation of Values 15. X ci <=Z i1 /10, X ce <=R e /10, X cc <=Z i2 /10, X c0 =R Leff2 /10 Procedure: 1. Connect the circuit as per the circuit diagram 2. Set the properties of components as per the components properties sheet 3. Place the transient simulation, d.c simulation and a.c simulations on editor. 4. Set the simulation properties 5. Simulate the circuit 6. Place the cartesian diagram and set the properties. 7. Note down the the graph.

14 Model Graphs: Result: 1. Overall Gain=, 2. Gain of First stage= 3. Bandwidth of Two stage= f H - f L 4. Bandwidth of first stage= f H - f L 5. Input Impedance=

15 Component Properties sheet SNO Component Name Value 1 R11 68 kohm 2 R21 13 kohm 3 R kohm 4 R kohm 5 Rs 600 kohm 6 Rc1 4.7 kohm Rc2 Re1 Re2 RL 1 kohm 1.2 kohm 240 ohm 100 kohm 11 Rs 600 ohm 12 Ci 22 uf 13 Ce1 33 uf 14 Ce2 150 uf 15 Cc 33 uf 16 C0 33 uf 17 Transistor Q1 BC107A 18 Transistor Q2 BC107A 19 Power supply VCC 12 V 20 Input Voltage source Vs 1 mv, 1 khz

16 Simulation Properties Sheet Transient Simulation: Sweep Parameter : time Type: linear Start: 0 // Starting time of analysis // Stop: 2ms // Stop time of analysis // Step: e-06 // Step Size or incrementing value// Number: 1111 // Number of points in the graphs// AC Simulation: Sweep Parameter : frequency Type: logarithmic Start: 10Hz // Starting frequency of analysis // Stop: 10MHz // Stop frequency of analysis // Points Per Decade: 10 Number: 100 // Number of points in the graphs// DC Simulation: No changes are required

17 Experiment- 4 Current Shunt Feedback Amplifier Aim: To simulate the Current Shunt Feedback Amplifier and obtain the frequency response. Design Specifications: Voltage Gain(Av1)=36dB, Voltage Gain(Av2)=11dB, Input Impedanc =2kohm, f L =1KHz without feedback Apparatus: Qucs Software Circuit Diagram: Without Feedback

18 With Feedback Design Equations: 1. Select the transistors which has higher cutoff frequency of 1MHz Design for Second Stage 2. Choose I C2 =5mA, Vcc=12, V CE2 = Vcc /2, V E2 = Vcc/10, S=5 3. Calculate R E2 =V E2 / I C2 4. Calculate R C from V CC -I C2 R C2 -V CE2 -V E2 =0 5. R Leff2 =R C2 R L 6. CalculateV B2 from V B2 =V BE2 +V E2 7. Calculate R 12, R 22 from S=1+R B2 /R E, V B2 =V CC (R 2 ) / (R 1 +R 2 ) 8. Z i2 =R B2 [h ie2 +(1+h fe2 )R E2 ] 9. AV2=-h fe2 R Leff / (h ie2 +(1+h fe2 )R E2 ) Design for First Stage 10. Choose I C =1mA, Vcc=12, V CE = Vcc /2, V E = Vcc/10, S= Calculate RE, RC, 12. R Leff1 =RC1 Zi2 13. Zi1=hie RB1 14. AV1=-hfeRLeff / Zi1 Calculation of Values 15.X ci <=Z i1 /10, X ce1 <=R e1 /10, X ce2 <=R e2 /10, X cc <=Z i2 /10, X c0 =R Leff2 /10

19 Design With Feedback 16. β = -R e2 / (R f +R e2 ), Choose R f =5 Kohm 17. D=1+ βa I, A I =(h fe1 h fe2 )(R c1 R B2 ) / (Z i2 +(R c1 R B2 )) 18. A I f = A I /D 19. A Vf =A If (R Leff2 )/R s 20. Z 0 f=z 0D, Z if =Z i /D Procedure: 1. Connect the circuit as per the circuit diagram 2. Set the properties of components as per the components properties sheet 3. Place the transient simulation, d.c simulation and a.c simulations on editor. 4. Set the simulation properties 5. Simulate the circuit 6. Place the cartesian diagram and set the properties. 7. Note down the the graph. Model Graphs: Without Feedback

20 With Feedback Result: 1. Without feedback A V =, 2. With Feedback A vf = 3. Without feedback BW=f H -f L 4. With feedback BW=f H -f L 5. Without feedback Z i =, Z 0 = 6. With feedback Z i =, Z 0 =

21 Component Properties sheet SNO Component Name Value 1 R kohm 2 R kohm 3 R kohm 4 R kohm 5 R s 600 kohm 6 R c1 4.7 kohm R c2 R e1 R e2 R L 1 kohm 1.2 kohm 240 ohm 100 kohm 11 R s 600 ohm 12 C i 1uF 13 C e1 1.5 uf 14 C e2 1.5 uf 15 C c 1.5 uf 16 C uf 17 Transistor Q 1 BC107A 18 Transistor Q 2 BC107A 19 Power supply V CC 12 V Input Voltage source Vs Rf 1 mv, 1 khz 5 kohm

22 Transient Simulation: Sweep Parameter : time Type: linear Start: 0 // Starting time of analysis // Stop: 2ms // Stop time of analysis // Step: e-06 // Step Size or incrementing value// Number: 1111 // Number of points in the graphs// AC Simulation: Sweep Parameter : frequency Type: logarithmic Start: 10Hz // Starting frequency of analysis // Stop: 50MHz // Stop frequency of analysis // Points Per Decade: 10 Number: 100 // Number of points in the graphs// DC Simulation: No changes are required

23 Experiment- 5 Cascode Amplifier Aim: To simulate the Cascode Amplifier and obtain the frequency response. Design Specifications: Voltage Gain(Av)=100, Bandwidth= 1MHz Apparatus: Qucs Software Circuit Diagram: Design Equations: 1. Select the transistor which has higher cutoff frequency of 1MHz 2. Assume V CC =15V,V CE1 =V CE2 =V CC /3.I E1 =I E2 =1mA,Rs = 600 ohm. 3. R Leff = R C R L. 4. re1 = 26mV/I E1. hie1 = β1*re1. Since β1= β2,i E1 =I E2 =>re1=re2.

24 5.Gain for Q1 transistor Av1=V01/Vi - R L /re1. With R L =re2=hib2 of transistor-2 => Av1 = -re2/re1= Av2 = R Leff /re2=?,total gain A T =Av1*Av2 = 100. calculate Av2 from above formula, from Av2 and R Leff calculate Rc. 7.calculate R E from Vcc=IcRc + V CE2 +V CE1 +I E R E. 8.I B1 =I B2 = I C1 / β, R 3 =10*R E, find I 3 from I 3 =V B1 /R 3 where V B1 =V E1 +V BE1. find I 2 from I 2 = I 3 +I B1 find R 2 from R 2 = [V B2 -V B1 ]/I 2. find I 1 from I 1 = I 2 +I B2. Find R 1 from R 1 =[Vcc-V B2 ]/I 1. 9.output coupling capacitor is given by X C0 = (Rc R L )/10. X C0 = 1/2pi*f*C 0 where f is lower cutoff frequency. In diagram C 0 =C 4. Bypass capacitor is given by X CE = R E /10. X CE = 1/2pi*f*C E. In diagram C E =C 3. Procedure: 1. Connect the circuit as per the circuit diagram 2. Set the properties of components as per the components properties sheet 3. Place the transient simulation 4. Set the simulation properties 5. Simulate the circuit 6. Place the cartesian diagram and set the properties. 7. Note down the the graph.

25 Model Graphs: Result: 1. Voltage Gain AV= 2. Bandwidth BW=f H -f L

26 Component Properties sheet SNO Component Name Value 1 R1 90 kohm 2 R2 24 kohm 3 Rs 100 ohm 4 R3 47 kohm 5 Rc 8.2 kohm 6 Re 4.7 kohm 7 RL 90 kohm 8 C1 100 uf 9 C3 20 uf 10 C4 68 uf 11 C5 56 uf 12 Transistor Q1 2N Power supply VCC 15 V 14 Input Voltage Source Vs 10 mv,1 khz

27 Simulation Properties Sheet Transient Simulation: Sweep Parameter : time Type: linear Start: 0 // Starting time of analysis // Stop: 2ms // Stop time of analysis // Step: e-06 // Step Size or incrementing value// Number: 1111 // Number of points in the graphs// AC Simulation: Sweep Parameter : frequency Type: logarithmic Start: 10Hz // Starting frequency of analysis // Stop: 2ms // Stop time of analysis // Points Per Decade: 10 Number: 100 // Number of points in the graphs// DC Simulation: No changes are required

28 Experiment- 6 Colpitts Oscillator Aim: To simulate the Colpitts Oscillator and obtain the transient response. Design Specifications: 1. Voltage Gain(A V )=50, 2. Frequency of the output signal=770 khz Apparatus: Qucs Software Circuit Diagram: Design Equations: 1. Design the CE Amplifier for the given Gain. 2. Choose C 1 3. Calculate C 2 from A V > C 1 /C 2 4. Calculate C from f=1/(2п (L 1 C) 1/2 ), where C= C 1 C 2 /(C 1 +C 2 )

29 Procedure: 1. Connect the circuit as per the circuit diagram 2. Set the properties of components as per the data sheet 3. Place the transiant simulation,d.c simulation and a.c simulations on editor. 4. Set the simulation properties 5. Simulate the circuit 6. Place the cartesian diagram and set the properties. 7. Note down the the graph. Model Graphs: Result: 1. Theoritical Frequency (f T )=(1/2Π ) X( (C 1 +C 2 )/LC 1 C 2 ) 1/2 2. Practical Frequency (f P )= 1/T measured

30 Component Properties sheet SNO Component Name Value 1 R1 13 kohm 2 R2 2.4 kohm 3 Rc1 820 ohm 4 Re1 200 ohm 5 Ci 10 uf 6 C0 1.5 uf 7 Ce 220 uf 8 C1 470 pf 9 C2 47 pf 9 Inductor L1 1 mh 10 Transistor BC107BP BC107BP 11 Power supply VCC 12 V Simulation Properties Sheet Transient Simulation: Sweep Parameter : time Type: linear Start: 0 // Starting time of analysis // Stop: 0.025ms // Stop time of analysis // Step: e-06 // Step Size or incrementing value// Number: 1111 // Number of points in the graphs// DC Simulation: No changes are required

31 Experiment- 7 RC Phase Shift Oscillator using Transistor Aim: To simulate the RC Phase Oscillator using Transistor and obtain the transient response. Design Specifications: Frequency of output signal = 18kHz, A V >= 29 Apparatus: Qucs Software Circuit Diagram: Design Equations: 1. Assume V CC =12V, V CE =V CC /2, V E =V CC /10 2. Calculate Rc from Av=-(h FE (R c 1/h oe )) / h ie, where h ie, h oe can be taken from the manufacturers datasheet of the transistor. 3. Calculate I C from V CC -I C R C -V CE -V E =0 4. Assume I C =I E, Calculate R E from V E = I E R E 5. S=1+ (R B /R E ), choose S=10, calculate R B =9R E, where R B =R1 R2 6. Calculate V B =V BE +V E, where V BE =0.65 V 7. Calculate the ratio R1/R2 from V B =(R2.V CC ) / (R1 + R2) 8. From steps 5 and 7 calculate R1, R2

32 9. Calculate emitter bypass capacitance (C E ) from X CE <= R E / Choose R= Ra=Rb=10 kohm, calculate Ca=Cb=Cc using f=1/2πrc(6+4k)1/2, where K= Rc/R 11. Calculate R7 from R7= R-h ie 12. Choose the transistor such that h oe R C < 0.1, h FE > 4K+23+29/K Procedure: 1. Connect the circuit as per the circuit diagram 2. Set the properties of components as per the components properties sheet 3. Place the transient simulation 4. Set the simulation properties 5. Simulate the circuit 6. Place the cartesian diagram and set the properties. 7. Note down the the graph. Model Graphs: Result: 1. Theoritical Frequency (f T ) =1/2ΠRC(6+4K) 1/2, where K= Rc/R, R=Ra=Rb 2. Practical Frequency (f P )= 1/ T measured

33 Component Properties sheet SNO Component Name Value 1 R1 33 kohm 2 R2 6.2 kohm 3 Re 600 ohm 4 Rc 2.4 kohm 5 Ra 10 kohm 6 Rb 10 kohm 7 R7 3.3 kohm 8 C1 330 uf 9 Ca, Cb, Cc 330 pf 10 Transistor BC107BP BC107BP 11 Power supply Vcc 12 V Simulation Properties Sheet Transient Simulation: Sweep Parameter : time Type: linear Start: 0 // Starting time of analysis // Stop: 7ms // Stop time of analysis // Step: e-06 // Step Size or incrementing value// Number: 1111 // Number of points in the graphs//

34 Experiment- 8 Class-A Power Amplifier (Transformerless) Aim: To simulate the Class-A Power Amplifier and calculate the Efficiency. Design Specifications: Efficiency (η) =10% Apparatus: Qucs Software Circuit Diagram: Design Equations: 1. Transistor Specifications will include I cmax, CE breakdown Voltage BV CEO and P Cmax 2. Choose 2V CEQ <= BV CEO and 2I CQ <= I cmax 3. Assume V CC =24,V CEQ = V CC /2 4. Calculate Rc from V CC -I CQ R C -V CEQ =0 5. Calculate R B from I BQ =I CQ /h FE, I BQ =(V CC -0.7) / R B 6. Choose C1,C2=10uF

35 Procedure: 1. Connect the circuit as per the circuit diagram 2. Set the properties of components as per the components properties sheet 3. Place the transient simulation, d.c simulation and a.c simulations on editor. 4. Set the simulation properties 5. Simulate the circuit 6. Place the cartesian diagram and set the properties. 7. Note down the the graph. Model Graphs: Result: 1. P dc(i) = V CC I CQ = 2. P ac(o) =(V CE(P-P) ) 2 /(8R C ) = 3. η =(Pac(o) / P dc(i) ) X 100 =

36 Component Properties sheet SNO Component Name Value 1 Rb 100 kohm 2 Rc 300 ohm 3 RL 100 kohm 4 C1 10 uf 5 C2 10uF 6 Transistor 2N2222 2N Power supply VCC 24 V 8 Input Voltage Source VS 50mV, 1kHz Simulation Properties Sheet Transient Simulation: Sweep Parameter : time Type: linear Start: 0 // Starting time of analysis // Stop: 2ms // Stop time of analysis // Step: e-06 // Step Size or incrementing value// Number: 1111 // Number of points in the graphs// DC Simulation: No changes are required

37 Experiment- 9 Class-B Complementary Symmetry Amplifier Aim: To simulate the Class-B Complementary Symmetry Amplifier and calculate the Efficiency. Design Specifications: Efficiency η=78% Apparatus: Qucs Software Circuit Diagram: Procedure: 1. Connect the circuit as per the circuit diagram 2. Set the properties of components as per the components properties sheet 3. Place the transient simulation, d.c simulation and a.c simulations on editor. 4. Set the simulation properties 5. Simulate the circuit 6. Place the cartesian diagram and set the properties. 7. Note down the the graph by giving input voltage as 1V and 30V.

38 Model Graphs: Result: 1. Pdc(i)= V CC (2I C(P) / π ) 2. Pac(o)= (V L(P-P) ) 2 / 8R L 3. η =(Pac(o) / P dc(i) ) X 100

39 Component Properties sheet SNO Component Name Value 1 RL 1 kohm 2 C1 100 uf 3 Transistor 2N2907A 2N2907A (PNP) 4 Transistor 2N2222 2N2222 (NPN) 5 Power supply V1 30 V 6 Power supply V2 30 V 7 Input Voltage Source V3 (1-30) V, 1 khz Simulation Properties Sheet Transient Simulation: Sweep Parameter : time Type: linear Start: 0 // Starting time of analysis // Stop: 2ms // Stop time of analysis // Step: e-06 // Step Size or incrementing value// Number: 1111 // Number of points in the graphs// DC Simulation: No changes are required

40 Experiment- 10 Common Base (BJT) Amplifier Aim: To simulate the Common Base Amplifier and obtain the frequency response. Design Specifications: Voltage Gain(Av)=30, Bandwidth= 1MHz, Apparatus: Qucs Software Circuit Diagram: Design Equations: 1. Select the transistor which has higher cutoff frequency of 1MHz 2. Assume VCC=12V, VCB =VCC/2. 3. Calculate Rc from equation Avs = -h fb* R L '/(Ri + Rs) where R L ' = Rc R L Ri = hib,rs is the sourcr resistance,r L is the load resistance 4. Calculate Ic from equation Vcc-IcRc-V CB = 0. 5.Assume Ic =I E and calculate RE from -V EE +I E R E -V CB =0. 6.Calculate Cs from equation f L = 1/(2pi(Rs+Ri)Cs) wher f L is the lower cutoff frequency. and take C L =Cs.

41 Procedure: 1. Connect the circuit as per the circuit diagram 2. Set the properties of components as per the components properties sheet 3. Place the transient simulation, d.c simulation and a.c simulations on editor. 4. Set the simulation properties 5. Simulate the circuit 6. Place the cartesian diagram and set the properties. 7. Note down the the graph. Model Graphs: Result: 1.Voltage Gain= 2.Bandwidth BW= f H -f L

42 Component Properties sheet SNO Component Name Value 1 Rs 100 ohm 2 RE 650 ohm 3 RC 4 Kohm 4 RL 15 kohm 5 Cs 10 uf 6 CL 10 uf 7 Transistor BC107BP BC107BP 8 Power supply VCC 12 V 9 Power supply VEE 2V 10 Input Voltage Source Vin 10mV,1 khz

43 Simulation Properties Sheet Transient Simulation: Sweep Parameter : time Type: linear Start: 0 // Starting time of analysis // Stop: 2ms // Stop time of analysis // Step: e-06 // Step Size or incrementing value// Number: 1111 // Number of points in the graphs// AC Simulation: Sweep Parameter : frequency Type: logarithmic Start: 10Hz // Starting frequency of analysis // Stop: 100MHz // Stop time of analysis // Points Per Decade: 10 Number: 100 // Number of points in the graphs// DC Simulation: No changes are required

44 Experiment- 11 Hartley Oscillator Aim: To simulate the Transistor Hartley Oscillator and obtain the transient response. Design Specifications: Voltage Gain(A V )=50, Frequency of the output signal=7.7 khz Apparatus: Qucs Software Circuit Diagram:

45 Design Equations: 1. Design the CE Amplifier for the given Gain. 2. Choose L 1 3. Calculate L 2 from A V =1/β=L 2 /L 1 4. Calculate C 3 from f=1/(2п (LC 3 ) 1/2 ), where L= L 1 +L 2 Procedure: 1. Connect the circuit as per the circuit diagram 2. Set the properties of components as per the components properties sheet 3. Place the transient simulation, d.c simulation and a.c simulations on editor. 4. Set the simulation properties 5. Simulate the circuit 6. Place the cartesian diagram and set the properties. 7. Note down the the graph. Model Graphs: Result: 1. Theoritical Frequency (f T )=1/ (2Π ((L 1 +L 2 )C) 1/2 ) 2. Practical Frequency (f P )= 1/T measured

46 Component Properties sheet SNO Component Name Value 1 R1 13 kohm 2 R2 2.4 kohm 3 Rc1 820 ohm 4 Re1 200 ohm 5 C1 10 uf 6 C2 1.5 uf 7 C3 2 uf 8 Inductor L1 2 mh 9 Inductor L2 2mH 10 Transistor BC107BP BC107BP 11 Power supply VCC 12 V Simulation Properties Sheet Transient Simulation: Sweep Parameter : time Type: linear Start: 0 // Starting time of analysis // Stop: 10 ms // Stop time of analysis // Step: e-06 // Step Size or incrementing value// Number: 1111 // Number of points in the graphs// DC Simulation: No changes are required

47

### CHAPTER.4: Transistor at low frequencies

CHAPTER.4: Transistor at low frequencies Introduction Amplification in the AC domain BJT transistor modeling The re Transistor Model The Hybrid equivalent Model Introduction There are three models commonly

### Chapter 5. BJT AC Analysis

Chapter 5. Outline: The r e transistor model CB, CE & CC AC analysis through r e model common-emitter fixed-bias voltage-divider bias emitter-bias & emitter-follower common-base configuration Transistor

### EE105 Fall 2014 Microelectronic Devices and Circuits

EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB)

### Chapter 2. - DC Biasing - BJTs

Chapter 2. - DC Biasing - BJTs Objectives To Understand : Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented

### Section 1: Common Emitter CE Amplifier Design

ECE 3274 BJT amplifier design CE, CE with Ref, and CC. Richard Cooper Section 1: CE amp Re completely bypassed (open Loop) Section 2: CE amp Re partially bypassed (gain controlled). Section 3: CC amp (open

### Biasing the CE Amplifier

Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC base-emitter voltage (note: normally plot vs. base current, so we must return to Ebers-Moll): I C I S e V BE V th I S e V th

### CHAPTER 3: TRANSISTOR MOSFET DR. PHAM NGUYEN THANH LOAN. Hà Nội, 9/24/2012

1 CHAPTER 3: TRANSISTOR MOSFET DR. PHAM NGUYEN THANH LOAN Hà Nội, 9/24/2012 Chapter 3: MOSFET 2 Introduction Classifications JFET D-FET (Depletion MOS) MOSFET (Enhancement E-FET) DC biasing Small signal

### DC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15-Mar / 59

Contents Three States of Operation BJT DC Analysis Fixed-Bias Circuit Emitter-Stabilized Bias Circuit Voltage Divider Bias Circuit DC Bias with Voltage Feedback Various Dierent Bias Circuits pnp Transistors

### At point G V = = = = = = RB B B. IN RB f

Common Emitter At point G CE RC 0. 4 12 0. 4 116. I C RC 116. R 1k C 116. ma I IC 116. ma β 100 F 116µ A I R ( 116µ A)( 20kΩ) 2. 3 R + 2. 3 + 0. 7 30. IN R f Gain in Constant Current Region I I I C F

### CHAPTER 14 SIGNAL GENERATORS AND WAVEFORM SHAPING CIRCUITS

CHAPTER 4 SIGNA GENERATORS AND WAEFORM SHAPING CIRCUITS Chapter Outline 4. Basic Principles of Sinusoidal Oscillators 4. Op Amp RC Oscillators 4.3 C and Crystal Oscillators 4.4 Bistable Multivibrators

### ESE319 Introduction to Microelectronics Bode Plot Review High Frequency BJT Model

Bode Plot Review High Frequency BJT Model 1 Logarithmic Frequency Response Plots (Bode Plots) Generic form of frequency response rational polynomial, where we substitute jω for s: H s=k sm a m 1 s m 1

### 7. DESIGN OF AC-COUPLED BJT AMPLIFIERS FOR MAXIMUM UNDISTORTED VOLTAGE SWING

à 7. DESIGN OF AC-COUPLED BJT AMPLIFIERS FOR MAXIMUM UNDISTORTED VOLTAGE SWING Figure. AC coupled common emitter amplifier circuit ü The DC Load Line V CC = I CQ + V CEQ + R E I EQ I EQ = I CQ + I BQ I

### Microelectronic Circuit Design 4th Edition Errata - Updated 4/4/14

Chapter Text # Inside back cover: Triode region equation should not be squared! i D = K n v GS "V TN " v & DS % ( v DS \$ 2 ' Page 49, first exercise, second answer: -1.35 x 10 6 cm/s Page 58, last exercise,

### DEPARTMENT OF ECE UNIT VII BIASING & STABILIZATION AMPLIFIER:

UNIT VII IASING & STAILIZATION AMPLIFIE: - A circuit that increases the amplitude of given signal is an amplifier - Small ac signal applied to an amplifier is obtained as large a.c. signal of same frequency

### Mod. Sim. Dyn. Sys. Amplifiers page 1

AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance

### EE 321 Analog Electronics, Fall 2013 Homework #8 solution

EE 321 Analog Electronics, Fall 2013 Homework #8 solution 5.110. The following table summarizes some of the basic attributes of a number of BJTs of different types, operating as amplifiers under various

### Exact Analysis of a Common-Source MOSFET Amplifier

Exact Analysis of a Common-Source MOSFET Amplifier Consider the common-source MOSFET amplifier driven from signal source v s with Thévenin equivalent resistance R S and a load consisting of a parallel

### Lecture 150 Simple BJT Op Amps (1/28/04) Page 150-1

Lecture 50 Simple BJT Op Amps (/28/04) Page 50 LECTURE 50 SIMPLE BJT OP AMPS (READING: TextGHLM 425434, 453454, AH 249253) INTRODUCTION The objective of this presentation is:.) Illustrate the analysis

### ECE-343 Test 1: Feb 10, :00-8:00pm, Closed Book. Name : SOLUTION

ECE-343 Test : Feb 0, 00 6:00-8:00pm, Closed Book Name : SOLUTION C Depl = C J0 + V R /V o ) m C Diff = τ F g m ω T = g m C µ + C π ω T = g m I / D C GD + C or V OV GS b = τ i τ i = R i C i ω H b Z = Z

### Lecture 140 Simple Op Amps (2/11/02) Page 140-1

Lecture 40 Simple Op Amps (2//02) Page 40 LECTURE 40 SIMPLE OP AMPS (READING: TextGHLM 425434, 453454, AH 249253) INTRODUCTION The objective of this presentation is:.) Illustrate the analysis of BJT and

### Experiment Guide for RC Circuits

Guide-P1 Experiment Guide for RC Circuits I. Introduction 1. Capacitors A capacitor is a passive electronic component that stores energy in the form of an electrostatic field. The unit of capacitance is

### BC546 / 547 / 548. Small Signal Transistors (NPN) Vishay Semiconductors

Small Signal Transistors (NPN) Features NPN Silicon Epitaxial Planar Transistors These transistors are subdivided into three groups A, B, and C according to their current gain. The type BC546 is available

### AC Circuits Homework Set

Problem 1. In an oscillating LC circuit in which C=4.0 μf, the maximum potential difference across the capacitor during the oscillations is 1.50 V and the maximum current through the inductor is 50.0 ma.

### ESE319 Introduction to Microelectronics. Output Stages

Output Stages Power amplifier classification Class A amplifier circuits Class A Power conversion efficiency Class B amplifier circuits Class B Power conversion efficiency Class AB amplifier circuits Class

### Chapter7. FET Biasing

Chapter7. J configurations Fixed biasing Self biasing & Common Gate Voltage divider MOS configurations Depletion-type Enhancement-type JFET: Fixed Biasing Example 7.1: As shown in the figure, it is the

### 2N4403. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

N443 Preferred Device General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit BASE Collector Emitter Voltage V CEO 4 Vdc Collector

### DISCRETE SEMICONDUCTORS DATA SHEET. BFS17 NPN 1 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DISCRETE SEMICONDUCTORS DT SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION NPN transistor in a plastic SOT23 package. PPLICTIONS wide range of RF applications such as: Mixers

### Transistors E ITT INTERMETALL

Transistors 6--E ITT INTERMETALL All information and data contained in this data book are without any commitment, are not to be considered as an offer for conclusion of a contract nor shall they be construed

### Alternating Current Circuits. Home Work Solutions

Chapter 21 Alternating Current Circuits. Home Work s 21.1 Problem 21.11 What is the time constant of the circuit in Figure (21.19). 10 Ω 10 Ω 5.0 Ω 2.0µF 2.0µF 2.0µF 3.0µF Figure 21.19: Given: The circuit

### Lecture 23: Negative Resistance Osc, Differential Osc, and VCOs

EECS 142 Lecture 23: Negative Resistance Osc, Differential Osc, and VCOs Prof. Ali M. Niknejad University of California, Berkeley Copyright c 2005 by Ali M. Niknejad A. M. Niknejad University of California,

### figure shows a pnp transistor biased to operate in the active mode

Lecture 10b EE-215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the

### n-channel Solar Inverter Induction Heating G C E Gate Collector Emitter

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA 1% of the parts tested for I LM Positive V CE (ON)

### DISCRETE SEMICONDUCTORS DATA SHEET. BLW96 HF/VHF power transistor

DISCRETE SEMICONDUCTORS DATA SHEET August 1986 DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-a, AB and B operated high power industrial and military transmitting equipment

### EXP. NO. 3 Power on (resistive inductive & capacitive) load Series connection

OBJECT: To examine the power distribution on (R, L, C) series circuit. APPARATUS 1-signal function generator 2- Oscilloscope, A.V.O meter 3- Resisters & inductor &capacitor THEORY the following form for

### D is the voltage difference = (V + - V - ).

1 Operational amplifier is one of the most common electronic building blocks used by engineers. It has two input terminals: V + and V -, and one output terminal Y. It provides a gain A, which is usually

### Operational Amplifiers

Operational Amplifiers A Linear IC circuit Operational Amplifier (op-amp) An op-amp is a high-gain amplifier that has high input impedance and low output impedance. An ideal op-amp has infinite gain and

### E2.2 Analogue Electronics

E2.2 Analogue Electronics Instructor : Christos Papavassiliou Office, email : EE 915, c.papavas@imperial.ac.uk Lectures : Monday 2pm, room 408 (weeks 2-11) Thursday 3pm, room 509 (weeks 4-11) Problem,

### S-13R1 Series REVERSE CURRENT PROTECTION CMOS VOLTAGE REGULATOR. Features. Applications. Packages. ABLIC Inc., Rev.1.

www.ablicinc.com REVERSE CURRENT PROTECTION CMOS VOLTAGE REGULATOR ABLIC Inc., 212-214 Rev.1.2_2 The, developed by using the CMOS technology, is a positive voltage regulator IC of 15 ma output current,

### Common Drain Stage (Source Follower) Claudio Talarico, Gonzaga University

Common Drain Stage (Source Follower) Claudio Talarico, Gonzaga University Common Drain Stage v gs v i - v o V DD v bs - v o R S Vv IN i v i G C gd C+C gd gb B&D v s vv OUT o + V S I B R L C L v gs - C

### EXPERIMENT 07 TO STUDY DC RC CIRCUIT AND TRANSIENT PHENOMENA

EXPERIMENT 07 TO STUDY DC RC CIRCUIT AND TRANSIENT PHENOMENA DISCUSSION The capacitor is a element which stores electric energy by charging the charge on it. Bear in mind that the charge on a capacitor

### Monolithic N-Channel JFET Dual

N9 Monolithic N-Channel JFET Dual V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I G Max (pa) V GS V GS Max (mv). to. Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: pa Low Noise:

### Half-circuit incremental analysis techniques

6.012 Electronic Devices and Circuits Lecture 19 Differential Amplifier Stages Outline Announcements Handouts Lecture Outline and Summary Design Problem out tomorrow in recitation Review Singletransistor

### i;\-'i frz q > R>? >tr E*+ [S I z> N g> F 'x sa :r> >,9 T F >= = = I Y E H H>tr iir- g-i I * s I!,i --' - = a trx - H tnz rqx o >.F g< s Ire tr () -s

5 C /? >9 T > ; '. ; J ' ' J. \ ;\' \.> ). L; c\ u ( (J ) \ 1 ) : C ) (... >\ > 9 e!) T C). '1!\ /_ \ '\ ' > 9 C > 9.' \( T Z > 9 > 5 P + 9 9 ) :> : + (. \ z : ) z cf C : u 9 ( :!z! Z c (! \$ f 1 :.1 f.

### C1 (2) C2 (1) E1 (3) E2 (4) Type Marking Pin Configuration Package BCV61B BCV61C 2 = C1 2 = C1 1 = C2 1 = C2

NPN Silicon Double Transistor To be used as a current mirror Good thermal coupling and V BE matching High current gain Low collectoremitter saturation voltage C1 (2) C2 (1) 2 Tr.1 Tr.2 1 VPS05178 E1 ()

### To investigate further the series LCR circuit, especially around the point of minimum impedance. 1 Electricity & Electronics Constructor EEC470

Series esonance OBJECTIE To investigate further the series LC circuit, especially around the point of minimum impedance. EQUIPMENT EQUIED Qty Apparatus Electricity & Electronics Constructor EEC470 Basic

### Lecture 6: Impedance (frequency dependent. resistance in the s- world), Admittance (frequency. dependent conductance in the s- world), and

Lecture 6: Impedance (frequency dependent resistance in the s- world), Admittance (frequency dependent conductance in the s- world), and Consequences Thereof. Professor Ray, what s an impedance? Answers:

### BC556B, BC557A, B, C, BC558B. Amplifier Transistors. PNP Silicon BC556B PNP AUDIO 100MA 65V 500MW TO92.

B, A, B, C, B Amplifier Transistors PNP Silicon Features PbFree Packages are Available* B PNP AUDIO 1MA 65 5MW TO92 COLLECTOR 1 MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating

### Multistage Amplifier Frequency Response

Multistage Amplifier Frequency Response * Summary of frequency response of single-stages: CE/CS: suffers from Miller effect CC/CD: wideband -- see Section 0.5 CB/CG: wideband -- see Section 0.6 (wideband

### UNIVERSITÀ DEGLI STUDI DI CATANIA. Dottorato di Ricerca in Ingegneria Elettronica, Automatica e del Controllo di Sistemi Complessi, XXII ciclo

UNIVERSITÀ DEGLI STUDI DI CATANIA DIPARTIMENTO DI INGEGNERIA ELETTRICA, ELETTRONICA E DEI SISTEMI Dottorato di Ricerca in Ingegneria Elettronica, Automatica e del Controllo di Sistemi Complessi, XXII ciclo

### Transistor amplifiers: Biasing and Small Signal Model

Transistor amplifiers: iasing and Small Signal Model Transistor amplifiers utilizing JT or FT are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly. Then, similar FT

### EE221 - Practice for the Midterm Exam

EE1 - Practice for the Midterm Exam 1. Consider this circuit and corresponding plot of the inductor current: Determine the values of L, R 1 and R : L = H, R 1 = Ω and R = Ω. Hint: Use the plot to determine

### The Miller Approximation

The Miller Approximation The exact analysis is not particularly helpful for gaining insight into the frequency response... consider the effect of C µ on the input only I t C µ V t g m V t R'out = r o r

### 2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS

, Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in lineoperated equipment such as audio output amplifiers; lowcurrent, highvoltage converters; and AC line relays.

### Fundamentals of Electrical Engineering, 1 st Edition. Giorgio Rizzoni

Fundamentals of Electrical Engineering, 1 st Edition. Giorgio Rizzoni Errata Corrige for first printing of 1 st Edition Revision 1 August 31 st, 2008 Rev. 1, August 31, 2008 1 Note from the Author Dear

### DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D86 Supersedes data of 2003 Dec 0 2004 Nov 05 FEATURES High current. APPLICATIONS Linear voltage regulators Low side switch Supply line switch for negative

### ECE 145A/218A Power Amplifier Design Lectures. Power Amplifier Design 1

Power Amplifiers; Part 1 Class A Device Limitations Large signal output match Define efficiency, power-added efficiency Class A operating conditions Thermal resistance We have studied the design of small-signal

### The Common-Emitter Amplifier

c Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. The Common-Emitter Amplifier Basic Circuit Fig. shows the circuit diagram

### IRG7PH35UDPbF IRG7PH35UD-EP

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA % of the parts tested for I LM Positive V CE (ON) temperature

### ECE 342 Electronic Circuits. 3. MOS Transistors

ECE 342 Electronic Circuits 3. MOS Transistors Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu 1 NMOS Transistor Typically L = 0.1 to 3 m, W = 0.2 to

### Symbolic SPICE TM Circuit Analyzer and Approximator

Symbolic SPICE Symbolic SPICE TM Circuit Analyzer and Approximator Application Note AN-006: Magnetic Microphone Amplifier by Gregory M. Wierzba Rev 072010 A) Introduction The schematic shown below in Fig.

### VI. Transistor amplifiers: Biasing and Small Signal Model

VI. Transistor amplifiers: iasing and Small Signal Model 6.1 Introduction Transistor amplifiers utilizing JT or FET are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly.

### Switched-Capacitor Circuits David Johns and Ken Martin University of Toronto

Switched-Capacitor Circuits David Johns and Ken Martin University of Toronto (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) University of Toronto 1 of 60 Basic Building Blocks Opamps Ideal opamps usually

### GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4N37 HA HA2 HA3 HA4 HA5 WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE 5 4 BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The general purpose

### à 10. DC (DIRECT-COUPLED) AMPLIFIERS

0.DC-Amps-X.nb à 0. DC (DIRECT-COUPLED) AMPLIFIERS ü AC COUPLED SMALL SIGNAL AMPLIFIERS ADVANTAGES:. Signal, load and the amplifier bias are separate. One can work on the bias calculations stage by stage

### MC3346. General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays

General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays The MC336 is designed for general purpose, low power applications for consumer and industrial designs.

### Chaotic Operation of a Colpitts Oscillator in the Presence of Parasitic Capacitances

Chaotic Operation of a Colpitts Oscillator in the Presence of Parasitic Capacitances O. TSAKIRIDIS Λ, D. SYVRIDIS y, E. ZERVAS z and J. STONHAM Λ ΛDept. of Computer and Electronics, y Dept. of Informatics

### MOSFET and CMOS Gate. Copy Right by Wentai Liu

MOSFET and CMOS Gate CMOS Inverter DC Analysis - Voltage Transfer Curve (VTC) Find (1) (2) (3) (4) (5) (6) V OH min, V V OL min, V V IH min, V V IL min, V OHmax OLmax IHmax ILmax NM L = V ILmax V OL max

### 2B30 Formal Report Simon Hearn Dr Doel

DEPARTMENT OF PHYSICS & ASTRONOMY SECOND YEAR LAB REPORT DECEMBER 2001 EXPERIMENT E7: STUDY OF AN OSCILLATING SYSTEM DRIVEN INTO RESONANCE PERFORMED BY SIMON HEARN, LAB PARTNER CAROLINE BRIDGES Abstract

### BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor

BC847BPDX6, SBC847BPDX6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT563 which is designed for low power surface

### ECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed)

ECE-342 Test 2 Solutions, Nov 4, 2008 6:00-8:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free

### 5SNA 2400E HiPak IGBT Module

Data Sheet, Doc. No. 5SYA 1417-4 2-214 5SNA 24E1735 HiPak IGBT Module VCE = 17 V IC = 24 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power

### Adjoint networks and other elements of circuit theory. E416 4.Adjoint networks

djoint networks and other elements of circuit theory One-port reciprocal networks one-port network is reciprocal if: V I I V = Where and are two different tests on the element Example: a linear impedance

### Package. Symbol Parameter Value Unit Test Conditions Note V GS = 15 V, T C = 25 C Fig. 19 A 7.5 V GS = 15 V, T C = 100 C.

C3M29D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 9 V 11.5 A 2 mω C3M SiC MOSFET technology High blocking voltage with low

### Estimation of Circuit Component Values in Buck Converter using Efficiency Curve

ISPACS2017 Paper 2017 ID 21 Nov. 9 NQ-L5 Paper ID 21, Estimation of Circuit Component Values in Buck Converter using Efficiency Curve S. Sakurai, N. Tsukiji, Y. Kobori, H. Kobayashi Gunma University 1/36

### ECE-305: Fall 2017 MOS Capacitors and Transistors

ECE-305: Fall 2017 MOS Capacitors and Transistors Pierret, Semiconductor Device Fundamentals (SDF) Chapters 15+16 (pp. 525-530, 563-599) Professor Peter Bermel Electrical and Computer Engineering Purdue

### Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time

### Package. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 15 V GS = 15 V, T C = 100 C.

C3M129D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ C R DS(on) 9 V 23 A 12 mω C3M SiC MOSFET technology High blocking voltage with low On-resistance

### PZT2222A. NPN Silicon Planar Epitaxial Transistor SOT 223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT

NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT223 package which is designed for

### SKP15N60 SKW15N60. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time

### LCR Series Circuits. AC Theory. Introduction to LCR Series Circuits. Module. What you'll learn in Module 9. Module 9 Introduction

Module 9 AC Theory LCR Series Circuits Introduction to LCR Series Circuits What you'll learn in Module 9. Module 9 Introduction Introduction to LCR Series Circuits. Section 9.1 LCR Series Circuits. Amazing

### 225 P C = 25 C Power Dissipation 40 P C = 100 C Power Dissipation Linear Derating Factor

PDP TRENCH IGBT PD - 962 Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved

### IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT

PD- 95899A IRGPS4B12UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

### Lowpass L Matching Network Designer

Lowpass L Matching Network Designer V S L V L I S j*x S C j*x L Table of Contents I. General Impedance Matching II. Impedance Transformation for Power Amplifiers III. Inputs IV. Calculations V. Outputs

### Errata of CMOS Analog Circuit Design 2 nd Edition By Phillip E. Allen and Douglas R. Holberg

Errata 2 nd Ed. (5/22/2) Page Errata of CMOS Analog Circuit Design 2 nd Edition By Phillip E. Allen and Douglas R. Holberg Page Errata 82 Line 4 after figure 3.2-3, CISW CJSW 88 Line between Eqs. (3.3-2)

### Electricity and Light Pre Lab Questions

Electricity and Light Pre Lab Questions The pre lab questions can be answered by reading the theory and procedure for the related lab. You are strongly encouraged to answers these questions on your own.

### Power Distribution System Design Methodology and Capacitor Selection for Modern CMOS Technology

Power Distribution System Design Methodology and Capacitor Selection for Modern CMOS Technology Abstract Larry Smith, Raymond Anderson, Doug Forehand, Tom Pelc, Tanmoy Roy Sun Microsystems, Inc. MS MPK15-103

### DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN transistor/schottky diode module Supersedes data of 2002 Oct 28 2003 Jul 04 FEATURES 600 mw total power dissipation High current capability

### HARDENED PNP SILICON SWITCHING TRANSISTOR

6 Lake Street, Lawrence, MA 01841 RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2907A JANSM 3K Rads (Si) 2N2906AL 2N2907AL JANSD 10K Rads

### 5SNE 1000E HiPak Chopper IGBT Module

Data Sheet, Doc. No. 5SYA 457-8-27 5SNE E333 HiPak Chopper IGBT Module VCE = 33 V IC = A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power

### Four Voltage References, an ADC and MSP430

Four Voltage References, an ADC and MSP430 Tadija Janjic HPL Tucson Michael Ashton DAP Motivation u Total Solution Concept u Application section of datasheets u New REF products from TI u Greed Product

### SKP06N60 SKA06N60. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time

### IXBT24N170 IXBH24N170

High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBT24N17 IXBH24N17 S 11 = 1 = 24A (sat) 2. TO-26 (IXBT) Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 17 V V CGR = 25 C

Chapter 4 Sinusoidal Steady-State Analysis In this unit, we consider circuits in which the sources are sinusoidal in nature. The review section of this unit covers most of section 9.1 9.9 of the text.

### DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 NPN transistor/schottky-diode module 2003 Nov 0 FEATURES 600 mw total power dissipation High current capability Reduces required PCB area Reduced

### ECE 438: Digital Integrated Circuits Assignment #4 Solution The Inverter

ECE 438: Digital Integrated Circuits Assignment #4 The Inverter Text: Chapter 5, Digital Integrated Circuits 2 nd Ed, Rabaey 1) Consider the CMOS inverter circuit in Figure P1 with the following parameters.

### ) t 0(q+ t ) dt n t( t) dt ( rre i dq t 0 u = = t l C t) t) a i( ( q tric c le E

EE70 eview Electrical Current i ( t ) dq ( t ) dt t q ( t ) i ( t ) dt + t 0 q ( t 0 ) Circuit Elements An electrical circuit consists o circuit elements such as voltage sources, resistances, inductances

### DATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09.

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN/PNP general purpose transistor Supersedes data of 2002 Aug 09 2002 Nov 22 FEATURES High current (500 ma) 600 mw total power dissipation Replaces