For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.

Size: px
Start display at page:

Download "For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit."

Transcription

1 Current Transducer HO-NP series I P N = 4, 6, 12, 15 A Ref: HO 4-NP, HO 6-NP, HO 12-NP, HO 15-NP For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit. Features Open loop multi-range current transducer Voltage output Single power supply +5 V Overcurrent detect 2.93 I P N (peak value) EEPROM Control Galvanic separation between primary and secondary circuit Low power consumption Compact design for THT PCB mounting Factory calibrated Dedicated parameter settings available on request (see page 1). Advantages Low offset drift Over-drivable 8 mm creepage /clearance Fast response. Applications AC variable speed and servo motor drives Static converters for DC motor drives Battery supplied applications Uninterruptible Power Supplies (UPS) Switched Mode Power Supplies (SMPS) Power supplies for welding applications Combiner box Solar inverter on DC side of the inverter (MPPT). Standards IEC 618-1: 1997 IEC 618-2: 215 IEC 618-3: 24 IEC : 27 IEC : 21 UL 58: 213. Application Domain Industrial. N 97.K3.23..; N 97.K3.27..; N 97.K3.36..; N 97.K3.39..; 97.K ; 97.K Page 1/13

2 Absolute maximum ratings Parameter Symbol Unit Value Supply voltage (not destructive) U C V 8 Supply voltage (not entering non standard modes) U C V 6.5 Primary conductor temperature T B C 12 Electrostatic discharge voltage U ESD kv 2 Stresses above these ratings may cause permanent damage. Exposure to absolute maximum ratings for extended periods may degrade reliability. UL 58: Ratings and assumptions of certification File # E Volume: 2 Section: 5 Standards CSA C22.2 NO INDUSTRIAL CONTROL EQUIPMENT - Edition 12 UL 58 STANDARD FOR INDUSTRIAL CONTROL EQUIPMENT - Edition 17 Ratings Parameter Symbol Unit Value Primary involved potential V AC/DC 6 Max surrounding air temperature T A C 15 Primary current I P A According to series primary current Secondary supply voltage U C V DC 5 Output voltage V to 5 Conditions of acceptability 1 - These devices have been evaluated for overvoltage category III and for use in pollution degree 2 environment. 2 - A suitable enclosure shall be provided in the end-use application. 3 - The terminals have not been evaluated for field wiring. 4 - These devices are intended to be mounted on a printed wiring board of end use equipment. The suitability of the connections (including spacings) shall be determined in the end-use application. 5 - Primary terminals shall not be straightened since assembly of housing case depends upon bending of the terminals. 6 - Any surface of polymeric housing have not been evaluated as insulating barrier. 7 - Low voltage control circuit shall be supplied by an isolating source (such as a transformer, optical isolator, limiting impedance or electro-mechanical relay). Marking Only those products bearing the UR Mark should be considered to be Listed or Recognized and covered under UL's Follow-Up Service. Always look for the Mark on the product. Page 2/13

3 Insulation coordination Parameter Symbol Unit Value Comment RMS voltage for AC insulation test 5/6 Hz/1 min U d kv 4.3 Impulse withstand voltage 1.2/5 µs Û W kv 8 Partial discharge test voltage (q m < 1 pc) U t V 15 Primary / Secondary Clearance (pri. - sec.) d CI mm > 8 Shortest distance through air Creepage distance (pri. - sec.) d Cp mm > 8 Shortest path along device body Clearance (pri. - sec.) mm > 8 When mounted on PCB with recommended layout Case material V according to UL 94 Comparative tracking index CTI 6 Application example V 6 CAT III PD2 Reinforced insulation, non uniform field according to IEC Application example V 1 CAT III PD2 Basic insulation non uniform field according to IEC Application example V 6 CAT III PD2 Simple insulation, non uniform field according to UL 58 Environmental and mechanical characteristics Parameter Symbol Unit Min Typ Max Comment Ambient operating temperature T A C 4 15 Ambient storage temperature T S C 4 15 Mass m g 31 Page 3/13

4 Electrical data HO 4-NP-1 HO NP series At T A = 25 C, U C = +5 V, R L = 1 kω unless otherwise noted (see Min, Max, typ. definition paragraph in page 11). Parameter Symbol Unit Min Typ Max Comment Primary nominal RMS current I P N A 4 Primary current, measuring range I P M A 1 U C 4.6 V Number of primary turns N P 1,2,4 See application information Primary jumper +25 C R P mω.9 4 jumpers in parallel Primary jumper +12 C R P mω.12 4 jumpers in parallel Supply voltage 1) U C V Current consumption I C ma Reference voltage (output) V Internal reference Reference voltage (input) V External reference Output voltage I P M V 2 2 Over operating temperature range output resistance R ref Ω Series output resistance R out Ω 2 5 Series Allowed capacitive load C L nf 6 Overcurrent detection output on resistance R on Ω Overcurrent detection hold t hold ms EEPROM control mv 5 Open drain, active low Over operating temperature range Additional time after threshold has released forced to GND when EEPROM in an error state 2) Electrical offset I P = A V O E mv 5 V = 2.5 V ref Electrical offset current Referred to primary I O E A Temperature coefficient of TC ppm/k C 15 C Temperature coefficient of V O E TCV O E mv/k C 15 C Offset drift referred to I P = A TCI O E ma/k C 15 C Theoretical sensitivity G th mv/a 2 8 I P N Sensitivity I P N ε G % Factory adjustment, 1 turn configuration, 4 jumpers in parallel Temperature coefficient of G TCG ppm/k C 15 C Linearity error I P N % of I P N Linearity error I P M % of I P M.5.5 Magnetic offset current (@ 1 I P N ) referred to primary I O M A.8.8 One turn Reaction 1 % of I P N t ra µs 5 A/µs Response 9 % of I P N t r µs 5 A/µs Frequency bandwidth ( 3 db) BW khz 35 Output RMS noise voltage spectral density (1 Hz 1 khz) e no µv/ Hz 16 Output noise voltage (DC 1 khz) (DC 1 khz) (DC 1 MHz) V no mvpp Peak value ±1 %, overcurrent Primary current, detection threshold I P Th A 2.64 I P N 2.93 I P N 3.22 I P N detection OCD X % of I P N = +15 C X % of I P N See formula note 3) = +85 C X % of I P N See formula note 3) Notes: 1) 3.3 V SP version available 2) EEPROM in an error state makes the transducer behave like a reverse current saturation. Use of the OCD may help to differentiate the two cases. 3) Accuracy (% of I PN ) = X + ( TCG (T 25) + TCI OE 1 1 (T 25)). A A 1 I PN Page 4/

5 Electrical data HO 6-NP-1 HO NP series At T A = 25 C, U C = +5 V, R L = 1 kω unless otherwise noted (see Min, Max, typ. definition paragraph in page 11). Parameter Symbol Unit Min Typ Max Comment Primary nominal RMS current I P N A 6 Primary current, measuring range I P M A 15 U C 4.6 V Number of primary turns N P 1,2,4 See application information Primary jumper +25 C R P mω.9 4 jumpers in parallel Primary jumper +12 C R P mω.12 4 jumpers in parallel Supply voltage 1) U C V Current consumption I C ma Reference voltage (output) V Internal reference Reference voltage (input) V External reference Output voltage I P M V 2 2 Over operating temperature range output resistance R ref Ω Series output resistance R out Ω 2 5 Series Allowed capacitive load C L nf 6 Overcurrent detection output on resistance R on Ω Overcurrent detection hold t hold ms EEPROM control mv 5 Open drain, active low, Over operating temperature range Additional time after threshold has released forced to GND when EEPROM in an error state 2) Electrical offset I P = A V O E mv 5 = 2.5 V Electrical offset current Referred to primary I O E A Temperature coefficient of TC ppm/k C 15 C Temperature coefficient of V O E TCV O E mv/k C 15 C Offset drift referred to I P = A TCI O E ma/k C 15 C Theoretical sensitivity G th mv/a I P N Sensitivity I P N ε G % Factory adjustment, 1 turn configuration, 4 jumpers in parallel Temperature coefficient of G TCG ppm/k C 15 C Linearity error I P N % of I P N Linearity error I P M % of I P M.5.5 Magnetic offset current (@ 1 I P N ) referred to primary I O M A.8.8 One turn Reaction 1 % of I P N t ra µs 5 A/µs Response 9 % of I P N t r µs 5 A/µs Frequency bandwidth ( 3 db) BW khz 35 Output RMS noise voltage spectral density (1 Hz 1 khz) e no µv/ Hz 11 Output noise voltage (DC 1 khz) (DC 1 khz) (DC 1 MHz) V no mvpp Peak value ±1 %, overcurrent Primary current, detection threshold I P Th A 2.64 I P N 2.93 I P N 3.22 I P N detection OCD X % of I P N = +15 C X % of I P N See formula note 3) = +85 C X % of I P N See formula note 3) Notes: 1) 3.3 V SP version available 2) EEPROM in an error state makes the transducer behave like a reverse current saturation. Use of the OCD may help to differentiate the two cases. 3) Accuracy (% of I PN ) = X + ( TCG (T 25) + TCI OE 1 1 (T 25)). A A 1 I PN Page 5/13

6 Electrical data HO 12-NP-1 HO NP series At T A = 25 C, U C = +5 V, R L = 1 kω unless otherwise noted (see Min, Max, typ. definition paragraph in page 11). Parameter Symbol Unit Min Typ Max Comment Primary nominal RMS current I P N A 12 Primary current, measuring range I P M A 3 U C 4.6 V Number of primary turns N P 1,2,4 See application information Primary jumper +25 C R P mω.9 4 jumpers in parallel Primary jumper +12 C R P mω.12 4 jumpers in parallel Supply voltage 1) U C V Current consumption I C ma Reference voltage (output) V Internal reference Reference voltage (input) V External reference Output voltage I P M - V 2 2 Over operating temperature range output resistance R ref Ω Series output resistance R out Ω 2 5 Series Allowed capacitive load C L nf 6 Overcurrent detection output on resistance R on Ω Overcurrent detection hold t hold ms EEPROM control mv 5 Open drain, active low, Over operating temperature range Additional time after threshold has released forced to GND when EEPROM in an error state 2) Electrical offset I P = A V O E mv 5 V = 2.5 V ref Electrical offset current Referred to primary I O E A Temperature coefficient of TC ppm/k C 15 C Temperature coefficient of V O E TCV O E mv/k C 15 C Offset drift referred to I P = A TCI O E ma/k C 15 C Theoretical sensitivity G th mv/a I P N Factory adjustment, 1 turn Sensitivity I P N ε G % configuration, 4 jumpers in parallel Temperature coefficient of G TCG ppm/k C 15 C Linearity error I P N % of I P N.5.5 Linearity error I P M % of I P M.5.5 Magnetic offset current (@ 1 I P N ) referred to primary I O M A.8.8 One turn Reaction 1 % of I P N t ra µs 5 A/µs Response 9 % of I P N t r µs 5 A/µs Frequency bandwidth ( 3 db) BW khz 35 Output RMS noise voltage spectral density (1 Hz 1 khz) e no µv/ Hz 6.1 Output noise voltage (DC 1 khz) (DC 1 khz) (DC 1 MHz) V no mvpp Peak value ±1 %, overcurrent Primary current, detection threshold I P Th A 2.64 I P N 2.93 I P N 3.22 I P N detection OCD X % of I P N = +15 C X % of I P N See formula note 3 = +85 C X % of I P N See formula note 3) Notes: 1) 3.3 V SP version available 2) EEPROM in an error state makes the transducer behave like a reverse current saturation. Use of the OCD may help to differentiate the two cases. 3) Accuracy (% of I P N ) = X + ( TCG (T 25) + TCI O E 1 (T 25)). A A 1 1 I P N Page 6/

7 Electrical data HO 15-NP-1 HO NP series At T A = 25 C, U C = +5 V, R L = 1 kω unless otherwise noted (see Min, Max, typ. definition paragraph in page 11). Parameter Symbol Unit Min Typ Max Comment Primary nominal RMS current I P N A 15 Primary current, measuring range 85 C 1) 15 C I P M A U C 4.6 V Number of primary turns N P 1,2,4 See application information Primary jumper +25 C R P mω.9 4 jumpers in parallel Primary jumper +12 C R P mω.12 4 jumpers in parallel Supply voltage 2) U C V Current consumption I C ma Reference voltage (output) V Internal reference Reference voltage (input) V External reference Output voltage I P M V 2 2 Over operating temperature range output resistance R ref Ω Series output resistance R out Ω 2 5 Series Allowed capacitive load C L nf 6 Overcurrent detection output on resistance R on Ω Overcurrent detection hold t hold ms EEPROM control mv 5 Open drain, active low, Over operating temperature range Additional time after threshold has released forced to GND when EEPROM in an error state 3) Electrical offset I P = A V O E mv 5 V = 2.5 V ref Electrical offset current Referred to primary I O E A Temperature coefficient of TC ppm/k C 15 C Temperature coefficient of V O E TCV O E mv/k C 15 C Offset drift referred to I P = A TCI O E ma/k C 15 C Theoretical sensitivity G th mv/a I P N Sensitivity I P N ε G % Factory adjustment, 1 turn configuration, 4 jumpers in parallel Temperature coefficient of G TCG ppm/k C 15 C Linearity error I P N % of I P N.4.4 Linearity error I P M % of I P M.5.5 Magnetic offset current (@ 1 I P N ) referred to primary I O M A.8.8 One turn Reaction 1 % of I P N t ra µs 5 A/µs Response 9 % of I P N t r µs 5 A/µs Frequency bandwidth ( 3 db) BW khz 35 Output RMS noise voltage spectral density (1 Hz 1 khz) e no µv/ Hz 5.2 Output noise voltage (DC 1 khz) (DC 1 khz) (DC 1 MHz) V no mvpp Peak value ±1 %, overcurrent Primary current, detection threshold I P Th A 2.64 I P N 2.93 I P N 3.22 x I P N detection OCD X % of I P N = +15 C X % of I P N See formula note 4) = +85 C X % of I P N See formula note 4) Notes: 1) Magnetic core temperature remaining equal or less than ambiant temperature T A 2) 3.3 V SP version available 3) EEPROM in an error state makes the transducer behave like a reverse current saturation. Use of the OCD may help to differentiate the two cases 4) 4) Accuracy (% of I P N ) = X + ( TCG (T 25) + TCI O E 1 (T 25)). A A 1 1 I P N Page 7/13

8 HO-NP series, measuring range versus external reference voltage 3 HO 4-NP 2 I P (A) 1-1 U c = 5 V U c = 4.75 V U c = 4.6 V (V) 4 HO 6-NP 3 I p (A) U c = 5 V U c = 4.75 V U c = 4.6 V (V) I p (A) HO 12-NP U c = 5 V U c = 4.75 V U c = 4.6 V (V) I p (A) HO 15-NP U c = 5 V U c = 4.75 V U c = 4.6 V (V) Page 8/13

9 Maximum continuous DC current For all ranges: 2 15 I P (A) 1 5 HO 4-NP HO 6-NP HO 12-NP HO 15-NP T A ( C) Important notice: whatever the usage and/or application, the transducer jumper temperature shall not go above the maximum rating of 12 C as stated in page 2 of this datasheet. Page 9/13

10 HO-NP series: name and codification HO family products may be ordered on request 1) with a dedicated setting of the parameters as described below (standard products are delivered with the setting 1 according to the table). HO-NP-XXXX Internal reference 2) 2.5 V V V 3.5 V 4 External only Standard products are: - HO 4-NP-1 - HO 6-NP-1 - HO 12-NP-1 - HO 15-NP-1 Response time 3.5 µs µs 2 6 µs EEPROM Control YES 1 NO Notes: 1) For dedicated settings, minimum quantities apply, please contact your local LEM support. 2) electrical data Overcurrent detection ( I P N ) 3) 2.93 A B C D E F G H 2.31 (V) TC (ppm/k) parameter min typ max min max ) OCD ( I P N ) correction table versus range and temperature All other values or empty cells: no change OCD Parameter HO-NP-xxxx I P N 25 C A B C D E 6 F G H OCD Parameter HO-NP-xxxx I P N 85 C A B C D E 6 F G H OCD Parameter HO-NP-xxxx I P N 15 C A B C D E 6 F G H Tolerance on OCD value ±2 % ±15 % ±1 % No change - Do not use Page 1/13

11 HO-NP series: output compatibility with HAIS Series Reference I P N (A) I P M (A) I P M / I P N HO 4-NP 4 1 I P N (V) Reference I P N (A) I P M (A) I P M / I P I P N (V) HO 6-NP HAIS 5-TP HO 12-NP HAIS 1-TP HO 15-NP The HO-NP gives the same output levels as the HAIS-TP referring to the HAIS nominal currents. This allows easier replacement of HAIS by HO-NP in existing applications. Application information Possibilities between range selection and number of turns Number of primary turns 1) 2) Primary current I P N = 4 A I P N = 6 A I P N = 12 A I P N = 15 A 1 4 A 6 A 12 A 15 A 2 2 A 3 A 6 A 75 A 4 1 A 15 A 3 A 37.5 A Connection diagram Number of primary turns Primary resistance current RMS R P (mω) = 25 C Recommended connections Notes: 1) The standard configuration is with all jumpers in parallel (1 primary turn) which is the only one calibrated and guaranteed by LEM. The sensitivity may change slightly for all other configurations, therefore, LEM advises the user to characterize any specific configuration. 2) The maximum magnetic offset referred to primary is inversely proportional to the number of turns, thus is divided by 2 with 2 turns and by 4 with 4 turns. Definition of typical, minimum and maximum values Minimum and maximum values for specified limiting and safety conditions have to be understood as such as well as values shown in typical graphs. On the other hand, measured values are part of a statistical distribution that can be specified by an interval with upper and lower limits and a probability for measured values to lie within this interval. Unless otherwise stated (e.g. 1 % tested ), the LEM definition for such intervals designated with min and max is that the probability for values of samples to lie in this interval is %. For a normal (Gaussian) distribution, this corresponds to an interval between 3 sigma and +3 sigma. If typical values are not obviously mean or average values, those values are defined to delimit intervals with a probability of %, corresponding to an interval between sigma and +sigma for a normal distribution. Typical, maximal and minimal values are determined during the initial characterization of the product. Remark Installation of the transducer must be done unless otherwise specified on the datasheet, according to LEM Transducer Generic Mounting Rules. Please refer to LEM document N ANE1254 available on our Web site: Products/Product Documentation. Page 11/13

12 PCB Footprint (in mm, general tolerance ±.3 mm) (Layout example with 4 jumpers in parallel) Assembly on PCB Recommended PCB hole diameter Maximum PCB thickness Wave soldering profile No clean process only Insulation distance (nominal values): 2.15 mm for primary pin.9 mm for secondary pin 2.4 mm maximum 26 C, 1 s d Cp d CI On PCB: A - B mm - Between jumper and secondary terminal 13.8 mm mm Between core and PCBA mm - Safety This transducer must be used in limited-energy secondary circuits. This transducer must be used in electric/electronic equipment with respect to applicable standards and safety requirements in accordance with the manufacturer s operating instructions. Caution, risk of electrical shock. When operating the transducer, certain parts of the module can carry hazardous voltage (e.g. primary bus bar, power supply). Ignoring this warning can lead to injury and/or cause serious damage. This transducer is a build-in device, whose conducting parts must be inaccessible after installation. A protective housing or additional shield could be used. Main supply must be able to be disconnected. Page 12/13

13 Dimensions HO-NP series (in mm, general linear tolerance ±.3 mm) Connection I P U C Remark: is positive with respect to when positive I P flows in direction of the arrow shown on the drawing above. Page 13/13

For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.

For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit. Current Transducer HO-NP/SP33 series I PN = 8, 15, 25 A Ref: HO 8-NP/SP33, HO 15-NP/SP33, HO 25-NP/SP33 For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the

More information

For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.

For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit. Current Transducer HO-NSM series I PN = 8, 15, 25 A Ref: HO 8-NSM, HO 15-NSM, HO 25-NSM For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the

More information

Ref: HLSR 16-PW; HLSR 32-PW; HLSR 40-PW-000; HLSR 50-PW-000,

Ref: HLSR 16-PW; HLSR 32-PW; HLSR 40-PW-000; HLSR 50-PW-000, Digital Current Transducer HLSR-PW series I P N = 16... 50 A Ref: HLSR 16-PW; HLSR 32-PW; HLSR 40-PW-000; HLSR 50-PW-000, Bitstream output from on onboard Sigma Delta modulator. For the electronic measurement

More information

Digital Current Transducer HO-SW series I P N = A. Ref: HO 100-SW; HO 150-SW; HO 200-SW; HO 250-SW

Digital Current Transducer HO-SW series I P N = A. Ref: HO 100-SW; HO 150-SW; HO 200-SW; HO 250-SW Digital Current Transducer HO-SW series I P N = 100... 250 A Ref: HO 100-SW; HO 150-SW; HO 200-SW; HO 250-SW Bitstream output from on onboard Sigma Delta modulator. For the electronic measurement of current:

More information

For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.

For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit. Current Transducer LDSR 0.3-TP/SP1 I P R N = 300 ma For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit. Features Closed

More information

For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.

For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit. Current Transducer GO-SMS series I P N = 10... 30 A Ref: GO 10-SMS, GO 20-SMS, GO 30-SMS For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the

More information

For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.

For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit. Current Transducer GO-SMS/SP3 series I P N = 10... 30 A Ref: GO 10-SMS/SP3, GO 20-SMS/SP3, GO 30-SMS/SP3 For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the

More information

For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.

For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit. Current Transducer GO-SME series I P N = 10 20 A Ref: GO 10-SME, GO 20-SME For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.

More information

For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.

For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit. Current Transducer GO-SMS/SP3 series I P N = 10... 30 A Ref: GO 10-SMS/SP3, GO 20-SMS/SP3, GO 30-SMS/SP3 For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the

More information

AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HAH1BVW S/08

AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HAH1BVW S/08 AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HAH1BVW S/08 Introduction The HAH1BVW family is for the electronic measurement of DC, AC or pulsed currents in high power and low voltage automotive applications

More information

AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HC5FW 500-S

AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HC5FW 500-S AUTOMOTIE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY Introduction The HC5FW family is for the electronic measurement of DC, AC or pulsed currents in high power and low voltage automotive applications with

More information

AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HC5FW 200-S/SP1

AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HC5FW 200-S/SP1 AUTOMOTIE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HC5FW 200-S/SP1 Introduction The HC5FW family is for the electronic measurement of DC, AC or pulsed currents in high power and low voltage automotive applications

More information

AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HC6H 400-S/SP1

AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HC6H 400-S/SP1 AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HC6H 400-S/SP1 Picture of product with pencil Introduction The HC6H family is for the electronic measurement of DC, AC or pulsed currents in high power

More information

DC/DC regulator Input V Output up to 16 A

DC/DC regulator Input V Output up to 16 A PMC 4000 series Contents Product Program...................... 2 Mechanical Data...................... 3 Connections......................... 3 Absolute Maximum Ratings............. 4 Input...............................

More information

PHOENIX CONTACT - 04/2016. Features

PHOENIX CONTACT - 04/2016. Features Signal conditioner Data sheet 100238_de_06 1 Description PHOENIX CONTACT - 04/2016 Features The MCR-C-UI-UI(-450)-DCI(-NC) 3-way isolation amplifier is used to electrically isolate and convert analog signals.

More information

3.3V Power Supply Isolated Current Sensor with Common Mode Field Rejection

3.3V Power Supply Isolated Current Sensor with Common Mode Field Rejection Fully Integrated Current Sensor IC 3.3V Power Supply Isolated Current Sensor with Common Mode Field Rejection Description The Senko Micro s provides economical and precise solutions for AC or DC current

More information

Optocoupler, Phototransistor Output, LSOP-4, 110 C Rated, Long Mini-Flat Package

Optocoupler, Phototransistor Output, LSOP-4, 110 C Rated, Long Mini-Flat Package TCLT11. Series Optocoupler, Phototransistor Output, LSOP-4, 11 C Rated, Long Mini-Flat Package 17295-5 DESCRIPTION The TCLT11. series consists of a phototransistor optically coupled to a gallium arsenide

More information

Optocoupler with Transistor Output

Optocoupler with Transistor Output Optocoupler with Transistor Output 17197_4 DESCRIPTION The HS817 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package.

More information

Isolated Current Sensor with Common Mode Field Rejection

Isolated Current Sensor with Common Mode Field Rejection Fully Integrated Current Sensor IC Isolated Current Sensor with Common Mode Field Rejection Description The Senko Micro s SC810 provides economical and precise solutions for AC or DC current sensing in

More information

IFX8117. Data Sheet. Standard Power. 1A Low-Dropout Linear Voltage Regulator IFX8117MEV IFX8117MEV33 IFX8117MEV50. Rev. 1.

IFX8117. Data Sheet. Standard Power. 1A Low-Dropout Linear Voltage Regulator IFX8117MEV IFX8117MEV33 IFX8117MEV50. Rev. 1. 1A Low-Dropout Linear Voltage Regulator IFX8117MEV IFX8117MEV33 IFX8117MEV5 Data Sheet Rev. 1.1, 21-7-2 Standard Power 1A Low-Dropout Linear Voltage Regulator IFX8117 1 Overview Features 5 V, 3.3 V and

More information

Isolated Current Sensor with Common Mode Field Rejection

Isolated Current Sensor with Common Mode Field Rejection Fully Integrated Current Sensor IC Isolated Current Sensor with Common Mode Field Rejection Description The SENKO SC820 provides economical and precise solutions for AC or DC current sensing in industrial,

More information

SPECIFICATION SS 51/9 400KV COUPLING CAPACITORS FOR POWER LINE CARRIER SYSTEM

SPECIFICATION SS 51/9 400KV COUPLING CAPACITORS FOR POWER LINE CARRIER SYSTEM INDEPENDENT POWER TRANSMISSION OPERATOR S.A. TNPRD/ SUBSTATION SPECIFICATION & EQUIPMENT SECTION January 2017 SPECIFICATION SS 51/9 400KV COUPLING CAPACITORS FOR POWER LINE CARRIER SYSTEM I. SCOPE This

More information

CNY64/ CNY65/ CNY66. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. VDE Standards

CNY64/ CNY65/ CNY66. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. VDE Standards Optocoupler with Phototransistor Output Description The CNY64/ CNY65/ CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The

More information

Film Capacitors. EMI suppression capacitors. Date: June 2018

Film Capacitors. EMI suppression capacitors. Date: June 2018 Film Capacitors EMI suppression capacitors Date: June 2018 EPCOS AG 2018. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without

More information

5-V Low Drop Fixed Voltage Regulator TLE 4275

5-V Low Drop Fixed Voltage Regulator TLE 4275 5-V Low Drop Fixed Voltage Regulator TLE 4275 Features Output voltage 5 V ± 2% Very low current consumption Power-on and undervoltage reset Reset low down to V Q = 1 V Very low-drop voltage Short-circuit-proof

More information

DC/DC converter Input 9-36 and Vdc Output up to 0.5A/3W

DC/DC converter Input 9-36 and Vdc Output up to 0.5A/3W PKV 3000 I PKV 5000 I DC/DC converter Input 9-36 and 18-72 Vdc up to 0.5A/3W Key Features Industry standard DIL24 Wide input voltage range, 9 36V, 18 72V High efficiency 74 83% typical Low idling power

More information

TLE Data Sheet. Automotive Power. Low Dropout Fixed Voltage Regulator TLE42644G. Rev. 1.1,

TLE Data Sheet. Automotive Power. Low Dropout Fixed Voltage Regulator TLE42644G. Rev. 1.1, Low Dropout Fixed Voltage Regulator TLE42644G Data Sheet Rev. 1.1, 214-7-3 Automotive Power Low Dropout Fixed Voltage Regulator TLE42644G 1 Overview Features Output Voltage 5 V ± 2 % up to Output Currents

More information

RP mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator. General Description. Features. Applications. Ordering Information. Marking Information

RP mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator. General Description. Features. Applications. Ordering Information. Marking Information RP122 3mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator General Description The RP122 is designed for portable RF and wireless applications with demanding performance and space requirements. The RP122

More information

CQ-3200 High-Speed Response Coreless Current Sensor

CQ-3200 High-Speed Response Coreless Current Sensor CQ-3200 High-Speed Response Coreless Current Sensor 1. General Description CQ-3200 is an open-type current sensor using a Hall sensor which outputs the analog voltage proportional to the AC/DC current.

More information

Data Sheet, Rev. 1.1, February 2008 TLE4294GV50. Low Drop Out Voltage Regulator. Automotive Power

Data Sheet, Rev. 1.1, February 2008 TLE4294GV50. Low Drop Out Voltage Regulator. Automotive Power Data Sheet, Rev. 1.1, February 2008 TLE4294GV50 Low Drop Out Voltage Regulator Automotive Power Low Drop Out Voltage Regulator TLE4294GV50 1 Overview Features Output voltage tolerance ±4% Very low drop

More information

Optocoupler, Phototransistor Output, Single Channel, Half Pitch Mini-Flat Package

Optocoupler, Phototransistor Output, Single Channel, Half Pitch Mini-Flat Package TCMT11. Series Optocoupler, Phototransistor Output, Single Channel, Half Pitch Mini-Flat Package 22628-1 C E 4 3 1 2 DESCRIPTION The TCMT11. series consist of a phototransistor optically coupled to a gallium

More information

SGM8707 Micro-Power, CMOS Input, RRIO, 1.4V, Push-Pull Output Comparator

SGM8707 Micro-Power, CMOS Input, RRIO, 1.4V, Push-Pull Output Comparator GENERAL DESCRIPTION The is an ultra low power comparator with a typical power supply current of 3nA. It has the best-in-class power supply current versus propagation delay performance. The propagation

More information

SFH615A / SFH6156. Pb Pb-free. Optocoupler, High Reliability, 5300 V RMS VISHAY. Vishay Semiconductors

SFH615A / SFH6156. Pb Pb-free. Optocoupler, High Reliability, 5300 V RMS VISHAY. Vishay Semiconductors SFH6A / SFH66 Optocoupler, High Reliability, 300 V RMS Features Excellent CTR Linearity Depending on Forward Current Isolation Test Voltage, 300 V RMS Fast Switching Times Low CTR Degradation Low Coupling

More information

SGM48000/1/2 High Speed, Dual Power MOSFET Drivers

SGM48000/1/2 High Speed, Dual Power MOSFET Drivers SGM000// GENERAL DESCRIPTION The SGM000// ICs are matched dual-drivers. Unique circuit design provides very high speed drivers capable of delivering peak currents of A into highly capacitive loads. Improved

More information

5-V Low Drop Fixed Voltage Regulator TLE

5-V Low Drop Fixed Voltage Regulator TLE 5-V Low Drop Fixed Voltage Regulator TLE 427-2 Features Output voltage tolerance ±2% 65 ma output current capability Low-drop voltage Reset functionality Adjustable reset time Suitable for use in automotive

More information

SGM nA, Non-Unity Gain, Dual Rail-to-Rail Input/Output Operational Amplifier

SGM nA, Non-Unity Gain, Dual Rail-to-Rail Input/Output Operational Amplifier PRODUCT DESCRIPTION The SGM8046 operates with a single supply voltage as low as 1.4V, while drawing less than 670nA (TYP) of quiescent current per amplifier. This device is also designed to support rail-to-rail

More information

CNY17 Series. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. VDE Standards.

CNY17 Series. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. VDE Standards. Optocoupler with Phototransistor Output Description The CNY7 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.

More information

TLF80511TF. Data Sheet. Automotive Power. Low Dropout Linear Fixed Voltage Regulator TLF80511TFV50 TLF80511TFV33. Rev. 1.

TLF80511TF. Data Sheet. Automotive Power. Low Dropout Linear Fixed Voltage Regulator TLF80511TFV50 TLF80511TFV33. Rev. 1. Low Dropout Linear Fixed Voltage Regulator V50 V33 Data Sheet Rev. 1.0, 2014-01-28 Automotive Power Table of Contents 1 Overview....................................................................... 3

More information

UNISONIC TECHNOLOGIES CO., LTD LM78XX

UNISONIC TECHNOLOGIES CO., LTD LM78XX UNISONIC TECHNOLOGIES CO., LTD LM78XX 3-TERMINAL 1A POSITIVE VOLTAGE REGULATOR 1 TO-220 DESCRIPTION The UTC LM78XX family is monolithic fixed voltage regulator integrated circuit. They are suitable for

More information

TOPFET high side switch

TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a I L Nominal load current (ISO) 9 A pin plastic envelope,

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLF245 VHF power MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLF245 VHF power MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET September 1992 FEATURES High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement

More information

5-V Low Drop Voltage Regulator TLE 4290

5-V Low Drop Voltage Regulator TLE 4290 5-V Low Drop Voltage Regulator TLE 429 Features Output voltage 5 V ± 2% Very low current consumption 45 ma current capability Power Good Feature Very low-drop voltage Short-circuit-proof Reverse polarity

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 3-TERMINAL 1A POSITIVE VOLTAGE REGULATOR DESCRIPTION The UTC LM78XX family is monolithic fixed voltage regulator integrated circuit. They are suitable for applications that

More information

SFH615A/SFH6156. Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS. Vishay Semiconductors

SFH615A/SFH6156. Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS. Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 300 V RMS Features Excellent CTR Linearity Depending on Forward Current Isolation Test Voltage, 300 V RMS e3 Fast Switching Times Low CTR Degradation

More information

SGM nA, Dual Rail-to-Rail I/O Operational Amplifier

SGM nA, Dual Rail-to-Rail I/O Operational Amplifier SGM842 67nA, Dual Rail-to-Rail I/O GENERAL DESCRIPTION The SGM842 is guaranteed to operate with a single supply voltage as low as 1.4V, while drawing less than 67nA (TYP) of quiescent current per amplifier.

More information

SGM nA, Non-Unity Gain, Quad Rail-to-Rail Input/Output Operational Amplifier

SGM nA, Non-Unity Gain, Quad Rail-to-Rail Input/Output Operational Amplifier PRODUCT DESCRIPTION The SGM8048 operates with a single supply voltage as low as 1.4V, while drawing less than 690nA (TYP) of quiescent current per amplifier. This device is also designed to support rail-to-rail

More information

TCLT10.. Series. Optocoupler with Phototransistor Output. Vishay Semiconductors. Description. Applications. VDE Standards

TCLT10.. Series. Optocoupler with Phototransistor Output. Vishay Semiconductors. Description. Applications. VDE Standards Optocoupler with Phototransistor Output Description The TCLT1.. Series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 4-lead SO6L package. The elements

More information

60 V, 0.3 A N-channel Trench MOSFET

60 V, 0.3 A N-channel Trench MOSFET Rev. 01 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT2 (TO-26AB) Surface-Mounted

More information

Powered-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Powered-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) Powered-off Protection,, 1. V to 5.5 V, SPDT Analog Switch (:1 Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for 1. V to 5.5 V operation with

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLF246 VHF power MOS transistor Oct 21. Product specification Supersedes data of September 1992

DISCRETE SEMICONDUCTORS DATA SHEET. BLF246 VHF power MOS transistor Oct 21. Product specification Supersedes data of September 1992 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of September 1992 1996 Oct 21 FEATURES High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch. PINNING

More information

Dual Low Dropout Voltage Regulator

Dual Low Dropout Voltage Regulator Dual Low Dropout Voltage Regulator TLE 4473 GV55-2 Features Stand-by output 190 ma; 5 V ± 2% Main output: 300 ma, 5 V tracked to the stand-by output Low quiescent current consumption Disable function separately

More information

Request Ensure that this Instruction Manual is delivered to the end users and the maintenance manager.

Request Ensure that this Instruction Manual is delivered to the end users and the maintenance manager. Request Ensure that this Instruction Manual is delivered to the end users and the maintenance manager. 1 -A - Introduction - Thank for your purchasing MITSUBISHI ELECTRIC MELPRO TM D Series Digital Protection

More information

5-V Low Drop Fixed Voltage Regulator TLE 4299

5-V Low Drop Fixed Voltage Regulator TLE 4299 5-V Low Drop Fixed Voltage Regulator TLE 4299 Features Output voltage 5 V ± 2% 150 ma Output current Extreme low current consumption typical 65 µa in ON state Inhibit function: Below 1 µa current consumption

More information

Recommended Land Pattern: [mm]

Recommended Land Pattern: [mm] Dimensions: [mm] Recommended Land Pattern: [mm] Electrical Properties: Properties Test conditions Value Unit Tol. Capacitance 1 V/ 1 khz ± 0.2 khz C 150 nf ±10% Rated Voltage U R 310 V (AC) max. Rated

More information

SGM nA, Single Rail-to-Rail I/O Operational Amplifier

SGM nA, Single Rail-to-Rail I/O Operational Amplifier GENERAL DESCRIPTION The SGM8041 is guaranteed to operate with a single supply voltage as low as 1.4V, while drawing less than 710nA (TYP) of quiescent current. This device is also designed to support rail-to-rail

More information

TC ma, Tiny CMOS LDO With Shutdown. General Description. Features. Applications. Package Types SOT-23 SC-70

TC ma, Tiny CMOS LDO With Shutdown. General Description. Features. Applications. Package Types SOT-23 SC-70 1 ma, Tiny CMOS LDO With Shutdown Features Space-saving -Pin SC-7 and SOT-23 Packages Extremely Low Operating Current for Longer Battery Life: 3 µa (typ.) Very Low Dropout Voltage Rated 1 ma Output Current

More information

Low Drift, Low Power Instrumentation Amplifier AD621

Low Drift, Low Power Instrumentation Amplifier AD621 a FEATURES EASY TO USE Pin-Strappable Gains of 0 and 00 All Errors Specified for Total System Performance Higher Performance than Discrete In Amp Designs Available in -Lead DIP and SOIC Low Power,.3 ma

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLF543 UHF power MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLF543 UHF power MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET October 1992 FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability Designed for broadband operation. DESCRIPTION

More information

TLF80511EJ. Data Sheet. Automotive Power. Low Dropout Linear Fixed Voltage Regulator TLF80511EJV50 TLF80511EJV33. Rev. 1.

TLF80511EJ. Data Sheet. Automotive Power. Low Dropout Linear Fixed Voltage Regulator TLF80511EJV50 TLF80511EJV33. Rev. 1. Low Dropout Linear Fixed Voltage Regulator TLF80511EJV50 TLF80511EJV33 Data Sheet Rev. 1.0, 2014-11-17 Automotive Power Table of Contents 1 Overview.......................................................................

More information

Insulated Gate Bipolar Transistor (IGBT)

Insulated Gate Bipolar Transistor (IGBT) BUK856-8A GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated SYMBOL PARAMETER MAX. UNIT gate bipolar power transistor in a plastic envelope. V CE Collector-emitter voltage 8 V

More information

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.

More information

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Rev. 24 March 29 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package

More information

1.2 kv 16 mω 1.8 mj. Package. Symbol Parameter Value Unit Test Conditions Notes 117 V GS = 20V, T C

1.2 kv 16 mω 1.8 mj. Package. Symbol Parameter Value Unit Test Conditions Notes 117 V GS = 20V, T C CAS1H12AM1 1.2 kv, 1A Silicon Carbide Half-Bridge Module Z-FET TM MOSFET and Z-Rec TM Diode Not recommended for new designs. Replacement part: CAS12M12BM2 Features Ultra Low Loss Zero Turn-off Tail Current

More information

TCET110.(G) up to TCET4100. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. VDE Standards

TCET110.(G) up to TCET4100. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. VDE Standards Optocoupler with Phototransistor Output Description The TCET11./ TCET2/ TCET4 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic

More information

ST2L Very low quiescent current dual voltage regulator. Description. Features. Applications

ST2L Very low quiescent current dual voltage regulator. Description. Features. Applications Very low quiescent current dual voltage regulator Description Datasheet - production data Features DFN8 (5x6 mm) V O1 : fixed V O2 : adjustable from 1.25 to V I - V DROP Guaranteed current of output 1:

More information

DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 File under Discrete Semiconductors, SC7 996 Jul FEATURES Interchangeability of drain and source

More information

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS DESCRIPTION The / optocouplers consist of an AlGaAS LED, optically coupled to a very high speed integrated photo-detector logic gate with a strobable output. The devices are housed in a compact small-outline

More information

HAL501...HAL506, HAL508 Hall Effect Sensor ICs MICRONAS INTERMETALL MICRONAS. Edition May 5, DS

HAL501...HAL506, HAL508 Hall Effect Sensor ICs MICRONAS INTERMETALL MICRONAS. Edition May 5, DS MICRONAS INTERMETALL HAL1...HAL, HAL Hall Effect Sensor ICs Edition May, 1997 1--1DS MICRONAS HAL1...HAL HAL Hall Effect Sensor IC in CMOS technology Common Features: switching offset compensation at khz

More information

PRODUCTION DATA SHEET

PRODUCTION DATA SHEET The positive voltage linear regulator is configured with a fixed 3.3V output, featuring low dropout, tight line, load and thermal regulation. VOUT is controlled and predictable as UVLO and output slew

More information

LED light engines LED linear / area

LED light engines LED linear / area Module LLE G2 55mm 4lm ADV Modules LLE ADVANCED Product description Ideal for linear and panel lights LED system solution with outstanding system efficiency up to 165 lm/w, consisting of linear LED modules

More information

LED light engine / OLED LED linear / area

LED light engine / OLED LED linear / area LED light engine / OLED Module CLE G1 25mm ADV IND Modules CLE ADVANCED Product description LED modules for diffuse highbay applications Luminous flux: 26, lm per module Efficacy of the module up to 155

More information

High-ohmic/high-voltage resistors

High-ohmic/high-voltage resistors FEATURES These resistors meet the safety requirements of: UL1676 (range 510 kω to 11 MΩ) EN60065 BS60065 (U.K.) NFC 92-130 (France) VDE 0860 (Germany) High pulse loading capability Small size. APPLICATIONS

More information

WCAP-FTXX Film Capacitors

WCAP-FTXX Film Capacitors A Dimensions: [mm] B Recommended hole pattern: [mm] D1 Electrical Properties: Properties Test conditions Value Unit Tol. Capacitance 1 V/ 1 khz ± 0.2 khz C 0.1000 µf ± 10% Rated voltage U R 310 V (AC)

More information

LED light engines LED linear / area. Module RLE 2x6 EXC2 OTD Modules RLE EXCITE

LED light engines LED linear / area. Module RLE 2x6 EXC2 OTD Modules RLE EXCITE Module RLE 2x6 EXC2 OTD Modules RLE EXCITE Product description High efficiency outdoor modules Suitable for harsh and humid outdoor conditions Tested acc. to salt spray test (IEC 668-2-52) and harmful

More information

PINNING - SOT223 PIN CONFIGURATION SYMBOL

PINNING - SOT223 PIN CONFIGURATION SYMBOL BUK78-55 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface V DS Drain-source

More information

DC/DC converter Input 9-36 and Vdc Output up to 0.5A/3W

DC/DC converter Input 9-36 and Vdc Output up to 0.5A/3W PKV 3000 I PKV 5000 I DC/DC converter Input 9-36 and 18-72 Vdc up to 0.5A/3W Key Features Industry standard DIL24 Wide input voltage range, 9 36V, 18 72V High efficiency 74 83% typical Low idling power

More information

HIGH SPEED TRANSISTOR OPTOCOUPLERS

HIGH SPEED TRANSISTOR OPTOCOUPLERS DESCRIPTION The HCPL05XX, and HCPL04XX optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor housed in a compact pin small outline package. A separate connection

More information

PINNING - SOT404 PIN CONFIGURATION SYMBOL

PINNING - SOT404 PIN CONFIGURATION SYMBOL GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope V DS Drain-source voltage 55 V suitable

More information

MAU100 Series. 1W, Miniature SIP, Single & Dual Output DC/DC Converters MINMAX. Key Features

MAU100 Series. 1W, Miniature SIP, Single & Dual Output DC/DC Converters MINMAX. Key Features W, Miniature SIP, Single & Dual Output DC/DC s Key Features Efficiency up to % 000 Isolation MTBF >,000,000 Hours Low Cost Input,, and Output 3.3,,9,,,{,{9,{ and { Temperature Performance -0] to +] UL

More information

T20WN. Data Sheet. Torque transducers. Special features. Installation example with bellows couplings. B en

T20WN. Data Sheet. Torque transducers. Special features. Installation example with bellows couplings. B en T20WN Torque transducers Data Sheet Special features - Nominal (rated) torques 0.1 N m, 0.2 N m, 0. N m, 1 N m, 2 N m, N m, 10 N m, 20 N m, 0 N m, 100 N m, 200 N m - Accuracy class: 0.2 - Contactless transmission

More information

PHOTOVOLTAIC SOLID-STATE RELAY OPTOCOUPLERS

PHOTOVOLTAIC SOLID-STATE RELAY OPTOCOUPLERS PACKAGE SCHEMATIC ANODE 6 DRAIN 6 CATHODE 2 5 6 N/C 3 4 DRAIN DESCRIPTION The HSR32 and HSR42 devices consist of a AlGaAs infrared emitting diode optically coupled to a power MOSFET detector which is driven

More information

Recommended Land Pattern: [mm]

Recommended Land Pattern: [mm] Dimensions: [mm] Recommended Land Pattern: [mm] Electrical Properties: 3 4 5 0,7 Properties Test conditions Value Unit Tol. Inductance 1 100 khz/ 100 mv L 1 10 µh ±20% Inductance 2 100 khz/ 100 mv L 2

More information

PHASED OUT. LED light engine / OLED LED compact. Umodule SLE G4 15mm 2000lm 8x0 H ADV D50

PHASED OUT. LED light engine / OLED LED compact. Umodule SLE G4 15mm 2000lm 8x0 H ADV D50 w LED light engine / OLED Product description For spotlights and downlights Housing with Snap-On feature for easy reflector mounting Luminous flux up to 2,92 lm at tp = 65 C High efficacy up to 147 lm/w

More information

S-882Z Series ULTRA-LOW VOLTAGE OPERATION CHARGE PUMP IC FOR STEP-UP DC-DC CONVERTER STARTUP. Rev.1.2_00. Features. Applications.

S-882Z Series ULTRA-LOW VOLTAGE OPERATION CHARGE PUMP IC FOR STEP-UP DC-DC CONVERTER STARTUP. Rev.1.2_00. Features. Applications. ULTRA-LOW VOLTAGE OPERATION CHARGE PUMP IC FOR STEP-UP DC-DC CONVERTER STARTUP The is a charge pump IC for step-up DC-DC converter startup, which differs from conventional charge pump ICs, in that it uses

More information

PHASED OUT. LED light engine / OLED LED compact. Umodule SLE G4 15mm 2000lm 9x0 H EXC D50

PHASED OUT. LED light engine / OLED LED compact. Umodule SLE G4 15mm 2000lm 9x0 H EXC D50 w LED light engine / OLED Product description For spotlights and downlights Housing with Snap-On feature for easy reflector mounting Luminous flux up to 2,51 lm at tp = 65 C High efficacy up to 124 lm/w

More information

C N V (4TYP) U (5TYP)

C N V (4TYP) U (5TYP) QID3316 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697 (724) 92-7272 www.pwrx.com Dual IGBT HVIGBT Module 1 Amperes/33 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E M 1

More information

MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 Optocoupler, Phototransistor Output, no Base Connection

MOC8101, MOC8102, MOC8103, MOC8104, MOC8105  Optocoupler, Phototransistor Output, no Base Connection MOC80, MOC80, MOC803, MOC80, MOC80 Optocoupler, Phototransistor Output, no Base Connection i79009- DESCRIPTION The MOC80, MOC80, MOC803, MOC80, MOC80 family optocoupler consisting of a gallium arsenide

More information

FAN ma, Low-IQ, Low-Noise, LDO Regulator

FAN ma, Low-IQ, Low-Noise, LDO Regulator April 2014 FAN25800 500 ma, Low-I Q, Low-Noise, LDO Regulator Features V IN: 2.3 V to 5.5 V V OUT = 3.3 V (I OUT Max. = 500 ma) V OUT = 5.14 V (I OUT Max. = 250 ma) Output Noise Density at 250 ma and 10

More information

Optocoupler, Photodarlington Output, High Gain, With Base Connection

Optocoupler, Photodarlington Output, High Gain, With Base Connection End of Life January-208 - Alternative Device: CNY7 HB, HB2, HB3 Optocoupler, Photodarlington Output, High Gain, With Base Connection FEATURES A C NC 2 3 6 5 4 B C E Isolation test voltage: 4420 V RMS Coupling

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLF521 UHF power MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLF521 UHF power MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET November 1992 FEATURES PIN CONFIGURATION High power gain Easy power control ook, halfpage 1 Gold metallization Good thermal stability Withstands full load mismatch Designed

More information

HIGH SPEED TRANSISTOR OPTOCOUPLERS

HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLECHANNEL: PACKAGE SCHEMATIC N/C V CC + V CC V F + V F 7 V B _ 7 V 0 _ V O _ V 0 V F N/C 4 5 GND + 4 5 GND,,, Pin 7 is not connected in Part Number / DESCRIPTION The /, / and / optocouplers consist

More information

FEATURES SYMBOL QUICK REFERENCE DATA

FEATURES SYMBOL QUICK REFERENCE DATA FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Low on-state resistance Fast switching d g s V DSS = 2 V I D = 7.6 A R DS(ON) 23 mω GENERAL DESCRIPTION N-channel enhancement mode field-effect power

More information

Low Drop Voltage Regulator TLE 4295

Low Drop Voltage Regulator TLE 4295 Low Drop Voltage Regulator TLE 4295 Features Four versions: 2.6 V, 3.0 V, 3.3 V, 5.0 V tolerance ±4% Very low drop voltage Output current: 30 ma Power fail output Low quiescent current consumption Wide

More information

TLE42344G. Data Sheet. Automotive Power. Low Dropout Linear Voltage Regulator. Rev. 1.0,

TLE42344G. Data Sheet. Automotive Power. Low Dropout Linear Voltage Regulator. Rev. 1.0, Low Dropout Linear Voltage Regulator Data Sheet Rev. 1., 21-2-8 Automotive Power Low Dropout Linear Voltage Regulator 1 Overview Features Output voltage tolerance ±2% Low dropout voltage Output current

More information

Low Drop Voltage Regulator TLE 4296

Low Drop Voltage Regulator TLE 4296 Low Drop Voltage Regulator TLE 4296 Features Three versions: 3.0 V, 3.3 V, 5.0 V Output voltage tolerance ±4% Very low drop voltage Output current: 30 ma Inhibit input Low quiescent current consumption

More information

Powered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Powered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) DGE Powered-off Protection,,.8 V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The DGE is a high performance single-pole, double-throw (SPDT) analog switch designed for.8 V to 5.5 V operation

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLF145 HF power MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLF145 HF power MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET September 1992 FEATURES High power gain Low noise figure Good thermal stability Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement mode vertical

More information

Interference suppression film capacitors MKP 336 1

Interference suppression film capacitors MKP 336 1 MKP RADIAL POTTED TYPE PITCH /15/22.5/27.5 mm l b h lt P d t CBA196 Fig.1 Simplified outlines. FEATURES to 27.5 mm lead pitch Supplied loose in box and taped on reel Consists of a low-inductive wound cell

More information

9A HIGH-SPEED MOSFET DRIVERS

9A HIGH-SPEED MOSFET DRIVERS 9A HIGH-SPEED MOSFET DRIVERS 9A HIGH-SPEED MOSFET DRIVERS FEATURES Tough CMOS Construction High Peak Output Current.................. 9A High Continuous Output Current........ 2A Max Fast Rise and Fall

More information