R5 330K R49 100K Q4 BC549 R12 2K2 U2B TL074 R50 100K R28 3K3. VR7 47KB via J38 R48 100K C BASSDRUM_TRIG. VR6 10K via J39 R29 100K R51 22K Q11 BC559
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1 00 - SS RUM SSRUM_TRIG nf R K R K N R R K R 0 R K R K nf N R R K 0.uF EY R K R 0K R VR via J R U TL0 R R0 R VR via J EPTH R U TL0 R K PITH VR K via J R R K 0 R 0K R K nf N U TL0 R K R0 K R K R ISTORTION U TL0 VR via J N R K R R N VR via J TL0 U SSRUM_OUT SSRUM_VEL R0 K 00pF R U TL0 R M 0 N R N R nf R K R K nf R0 R R K PF R 0.UF R K R K R K R N N VR M via J EY R K 0.uF R 0K 0uF 0uF VR 0R via J R M R K R0 0K R K R K 0.uF R K R K 0 0.UF R K TTK R 0 R R R 0K R 0K R 0K nf R K 0.0uF NOISE iodes are N or equivalent ll NPN transistors are ll PNP transistors are
2 R K R U0 TL SNRE RUM SNPPY SNRERUM_VEL 00pF nf R M N VR0 0K via J TONE R N 0 0.uF R 0K nf R K R R S VR via J 0pF U TL0 0.uF R K VR K via J U TL0 SNRERUM_OUT SNRERUM_TRIG R K R R0 K R0 00R R R0 0 N R N U0 TL0 R R0 K nf NOISE R K R 0K R K nf 0pF U TL0 nf nf R K U TL0 R K R R N 0 R0 0K S 0pF R R K R N R K N N R R R0 0K 00nF R K nf K R R R0 N R K N R R N R 0K nf R 0K 0nF R0 K R R K R R VR via J R N R R K R0 0K 0 0nF U TL0 U TL0 R K R0 R R0 K V R N R0 U TL0 R0 R UE U 0 UF 0U R K R R0 M 0nF R0 U TL0 R00 N R U TL0 R R 0U U U U R K nf R R M R U TL0 0uF 0uF iodes are N or equivalent ll NPN transistors are, unless otherwise stated ll PNP transistors are
3 00 - LOW TOM R R M M R0 M 0 0. R K VR via J0 LOTOM_VEL LOTOM_TRIG R0 0.0 R M R 0K nf R0 K R R 0K U R U R R0 K V ZENER U R K R K R R0 R R R R U R R R U UF R 00R R K R R K R R 00R 0 nf U R R K R K R R 0nF R R R M R 0K R 0K U R 0.uF R R U U R K R R R K [K] R0 0K 0 nf [0nF] U R R R R R K R R R U R R R 0K U UE 0 R 0.uF R K VR K via J R K U U 0 VR 0K via J 0.uF R nf EY LOTOM_OUT LOTOM_NOISE R00 K nf 0uF 0uF 0uF 0uF U,,,,: TL0 iodes are N or equivalent U: 0UP ll NPN transistors are ll PNP transistors are
4 00 - MI TOM R R M M R M 0. VR via J MITOM_VEL R0 M MITOM_TRIG R0 K R R 0K nf R K R R 0K U R U R R K V ZENER U0 R K R K R0 R R R R0 R U R R R U UF R 00R 0 R K R R K R 00R R0 0 U R nf R K nf R K R R R R0 R M R0 0K R0 0K U R 0.uF R R 0 U U 0 R0 K R0 R R K R0 0K 0 U 0 R 0nF R0 R R R0 K R R R U R R R0 0K 0 U UE 0 R 0.uF R K [K] VR K via J R K U U0 nf [nf] VR 0K via J 0.uF R EY MITOM_OUT nf MITOMNOISE R K 0uF 0uF U,,0,,: TL0 0uF 0uF iodes are N or equivalent U: 0UP ll NPN transistors are ll PNP transistors are
5 00 - HI TOM VR via J 0 00nF HITOM_VEL HITOM_VEL R K R nf R M R 0K 0 nf R K R R 0K R U TL0 U TL0 R R K V ZENER U R K R K R R0 R0 M M R0 R R R R U TL0 R R R U 0U UF 0U R 00R 0 R R R K R 00R R R0 nf U TL0 R K R00 K nf [nf] R0 R R R R0 M 0K R R 0K 0.uF U0 TL0 R R R U 0U U 0U R0 K R R R K [K] R0 0K R0 nf [0nF] U0 TL0 0 R R0 R R K R R R U TL0 R0 R R0 0K U 0U UE 0U 0 R VR K via J VR0 0K via J 0.uF R K R K R M U TL uF R U TL0 nf EY HITOM_OUT 0.0 HITOMNOISE R K 0 0uF 0uF 0 0uF 0 0uF U,,,,0: TL0 iodes are N or equivalent U: 0UP ll NPN transistors are ll PNP transistors are
6 00 - HN LP HNLP_VEL HNLP_TRIG R K R R R K R00 U TL0 R R K R K R K R0 K R0 K R K U LM0 U LM0 U LM0 R M R K nf R0 K R K R M R K nf [nf] 0 0.uF U LM0 R0 0R 0pF R0 R K R 0K R K R K R K R K V JUST VR NOISE R K nf R 0K R0 0 nf nf 0.uF R K R K R K 0.uF R0 K R K R0 R R 0K U 00 R K 0 nf VR 0K via J U0 TL0 U0 TL0 HNLP_OUT U TL0 R K 00nF 00nF iodes are N or equivalent ll NPN transistors are ll PNP transistors are
7 00 - RIM SHOT R K R 0nF R 0K 0nF 0 N N VR via J RIMSHOT_VEL R0 M R K U TL0 R K R K U TL0 R K R K R 0R 0pF U TL0 0nF 0nF R 0K R K R K R K U TL0 RIMSHOT_OUT N R 0K R K RIMSHOT_TRIG 0 nf [nf] R K nf [nf] nf [nf] N R R K [K] R K U TL0 R K R M nf R0 0K R K 0 nf 0 nf R K U TL0 iodes are N or equivalent ll NPN transistors are ll PNP transistors are
8 0 U 00 0 LK RST LK EN R U N U 0U N R R U 0U R0 K 0 U 0U 0pF Polystyrene U 0 U 0 LK S R S 0 U HIHT PROM U 0U 0 0 U LK RST 0 E G 0 N 0 N R K LK R 0 0 R R0 K R K R K R R R R R 00 - HI HTS U: USE UNUFFERE TYPE VR via J HH 0 00pF 0uF/V R K R K 0 HIHTENT R R 0 R K % % 0K % 0K % 0K % 0K % R K R0 R R 0 U TL0 nf 0 nf R nf 0pF R 0.0uF R K VR via J K U TL0 HIHT_OUT HIHTSELET 0: OPEN HT : LOSE HT R K R R K VR via J VR via J M R OH EY uf 0V R K R R0 K R 0K R 0R R K U TL0 nf R 00R HIHTTRIG H EY iodes are N or equivalent ll NPN transistors are ll PNP transistors are
9 0 U0 00 LK RST U 0U 0 U 0U LK S 0 R U 0 E 00 - RSH YML U 0 0 LK EN R R K % R % R 0K % R 0K % R 0K % R 0K % nf U 0U R 0K U TL0 0 R0 K G U: USE UNUFFERE TYPE VR via J U 0U 0 LK RST U rash PROM R K R 0R R K R 00R 0uF/V R K K via J VR U TL0 RSH_OUT R K 0pF S U 0 0 RSH_VEL R 00pF LK R U uF/V R K R0 K R K R K R K RSH_TRIG R R R U TL0 nf nf R nf 0p R R K % R % R 0K % R0 0K % R 0K % R 0K % iodes are N or equivalent ll NPN transistors are ll PNP transistors are
10 00 - RIE YML 0 0 U00 U 0 0 LK EN R LK RST 0 R00 K % R0 % R0 0K % R0 0K % R0 0K % R0 0K % nf U: USE UNUFFERE TYPE U 0U U 0U U 0U VR0 via J 0 LK S 0 R U E G U 0U 0 LK RST U Ride EPROM R0 K R 0R R0 0K R0 K U TL0 R K R 00R 0uF/V R K VR K via J U0 TL0 RIE_OUT R RIE_TRIG R K 0 00pF 0pF R0 LK S R U U 0 R0 K % R0 % R0 0K % R0 0K % R 0K % R0 0K % RIE_VEL 0uF/V R R R K U TL0 R0 K R K nf nf R R K R K nf 0pF R iodes are N or equivalent ll NPN transistors are ll PNP transistors are
11 00 - MII INTERFE pf XTL MHz pf 0uF 0uF 00nF To board via J MII THRU: IN PIN MII THRU: IN PIN MII THRU: IN PIN MII IN: IN PIN MII IN: IN PIN J MII MII IN / MII THRU R 0R 00 N R 0R R 0R OS/LKIN MLR R0 R R R R/T0KI R0/INT N/ N/ V VSS U N R K OS/LKOUT R R R R R R R U PIF/0 R 0 R 0R R K U 0 0 LK RST U LK RST U LK RST R 0K % R 0K % R 0K % R 0K % R0 % R K % MITOM_TRIG SSRUM_TRIG SNRERUM_TRIG LOTOM_TRIG HIHT_TRIG RIMSHOT_TRIG RIE_TRIG HIHT_SELET HITOM_TRIG HNLP_TRIG RSH_TRIG 0 U TL0 X X0 X X X X X X X INH VEE U 0 X X0 X X X X X X X INH VEE U nf HITOM_TRIG HNLP_TRIG RIMSHOT_TRIG To board via J SNRERUM_VEL LOTOM_VEL MITOM_VEL SSRUM_VEL 0 U nf TL0 U TL0 HIHT_VEL RSH_VEL SYN PPN OUTPUT RUN/STOP: IN PIN TEMPO: IN PIN SYN GN: IN PIN R K R0 K R K R K R K R K R SW Pushswitch via J R R k R0 0R LE MII - via J0 R0 0R LE Power - via J0 0 nf U TL0 RIE_VEL J SYN
12 00 - POWER SUPPLY N00 J OUT (TO OR ) REG Vin GN 0 R RIGE RET P FUSE Vin N00 SUPPLY FOR OR J INPUT 00uF/V REG 0 GN GN SUPPLY FOR OR SUPPLY FOR OR V V INPUT 00uF/V P FUSE REG Vin GN N00
13 00 - MIX MPLIFIER / MUTING VR K via J uf U TL0 R0 K 0uF uf U TL0 R K 0uF MIX IN LEFT GN MIX IN RIGHT GN MIX OUT LEFT MIX OUT RIGHT J MIX IN / OUT TO OUTPUT SOKETS S S R K R K R N uf/v 0uF N R K N R 0K MUTING IRUIT iodes are N or equivalent ll NPN transistors are unless otherwise stated ll PNP transistors are
14 R00 K 00 - UIO OUTPUT SOKETS SSRUM_OUT 00 0nF R0 K SS RUM SNRERUM_OUT R0 K R0 K 0 0nF R0 K SNRE RUM R0 K R0 K LOWTOM_OUT 0 0nF R0 K LOW TOM PSSIVE OMPONENTS RE MOUNTE IRETLY TO JK SOKETS. R0 K R0 K MITOM_OUT 0 0nF R0 K MI TOM R K R K INIVIUL RUM OUTPUTS HITOM_OUT WIRE FROM J (OR ) N FROM J (OR ) 0 0nF R K HI TOM R K R K RIMSHOT_OUT 0 0nF R K RIM SHOT R K R K HNLP_OUT 0 0nF R K HN LP R K R K HIHT_OUT 0 0nF R K HI HT R K R0 K R K RSH_OUT 0 0nF R K RSH YML 0nF R MIX OUT LEFT R K R R K RIE_OUT 0 0nF R K RIE YML 0nF R0 MIX OUT RIGHT R K MIX IN LEFT GN MIX IN RIGHT GN MIX OUT LEFT MIX OUT RIGHT WIRING TO J (MIX IN / OUT)
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SYMETRIX INC th Avenue West Lynnwood, WA USA REV: DATE:
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
SCHEMATIC AD9265 CMOS EVALUATION BOARD REV. DRAWING NO. AD9265CE01A REVISIONS DESCRIPTION JUMPER TABLE RELAY CONTROL CHART A A DE N V C L O
THIS RWING IS THE PROPERTY OF NLOG EVIES IN. IT IS NOT TO E REPROUE OR OPIE, IN WHOLE OR IN PRT, OR USE IN FURNISHING INFORMTION TO OTHERS, OR FOR NY OTHER PURPOSE ETRIMENTL TO THE INTERESTS OF NLOG EVIES.
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MT9V128(SOC356) 63IBGA HB DEMO3 Card
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100K SLQ1 OP2 R207. Future option SLQ2 OP2 R307. Future option
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XIO2213ZAY REFERENCE DESIGN
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AS1117M3 or LM1117MPX-ADJ REG_VDD ADJ. C20 0.1uF U6. + C57 10uF R K 1% GND 3.92K 1%
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Headers for all pins sorted by pin no. (unpopulated) TSX-1001 Cortex-M0. Oscillator 44MHz
V V Way type onnector US Type onnector x.v.v Regulators Headers for all pins sorted by pin no. (unpopulated) Prototyping area with power and GNs (unpopulated) RS Transceiver US to Serial onverter Expansion
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General Purpose Transistors
General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 33/SC which is designed for low power surface mount
THAT Corporation. QSC Digital Cinema Monitor DCM-2/DCM-3 Monitor Board
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Power supply, reset circuit, reference voltage and power indicator. Analogue and digital inputs with options for FET outputs
VR core and power 00v.0 Power supply, reset circuit, reference voltage and power indicator. Port 00v.0 nalogue and digital inputs with options for FET outputs Port 00v.0 igital inputs with optional FET
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institution: University of Hawaii at Manoa
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Design Overview. Page 2 Power,Flash,SDcard User switch,reset switch. Page 3 Ethernet. Page 4 Audio. Page 5 USB. Page 6 JTAG,BOOTSW,LED,Header
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100K SLQ1 OP2 R207. Future option SLQ2 OP2 R307. Future option
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PROMOTES EXPERIMENTATION AND EXPLORATION
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The AN/ARC-54. Module Circuit Diagrams
The N/R- Module ircuit iagrams. Tone squelch (selective call). Homing. High requency oscillator HO. Low requency Oscilator LO. Variable I amplifier. R mplifier. Mechanical Tuning Unit. Power mplifier.
Generated by Foxit PDF Creator Foxit Software For evaluation only.
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Revisions. TRK-KEA128 Drawn by: Nov Original Release A. INZUNZA
Table of ontents Title Page Notes Rev X escription Original Release Revisions ate Nov--0 pproved Production Release ec--0 Production Release Feb--0 Microcontroller Solutions Group 0 William annon rive
DISCRETE SEMICONDUCTORS DATA SHEET. BFS17 NPN 1 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DT SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION NPN transistor in a plastic SOT23 package. PPLICTIONS wide range of RF applications such as: Mixers
Block Diagram SGTL5000 PG. 3. Power PG. 8. Communication PG.6. I2S Signals PG.7. Analog Inputs PG.4. Analog Outputs PG.5.
lock iagram I R Select I/SPI Mode Select MLK Source ommunication PG. US to I/SPI IS Signals PG. nalog Inputs PG. IS Interface Line-In / Microphone nalog Outputs PG. Headphone SGTL PG. igital Header P PSI
RSC CHIP VDD P05 P03 P01 P04 VDD GND PWM0 AVDD VDD AVDD P0-2 P0-5 P0-1 P0-6 P0-4 P0.3 GND P00. Y1 3.58MHz P00 P01 AGND P01 P00 P02 P02 P07 P0-0 P0-7
Place as close to pins of U as possible. RS HIP 0-00 RS-x emo/evaluation oard: RS-000 Thursday, ecember, 00 Size ocument Number Rev ate: Sheet of P XI P0 P0 P0 P0 P00 PN P0 P0 P0 P0 P0 P0 P0 P0 P XO -XM
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DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of May 994 File under Discrete Semiconductors, SC9 996 May 3 FEATURES 6 V nominal supply voltage996 May 3. W output power (BGY5A, BGY5B and BGY5D).4 W
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Intel Edison. 7V to 15V Brick Power Supply. 4.4V power supply and battery recharger UART 1 USB 0TG. EDISON BREAKOUT BOARD Title Title page
Intel Edison reakout Sept/0 V to V rick Power Supply V power supply and battery recharger SPI GPIO Intel Edison PWM I S URT 0 0" header US 0TG URT Level Shifter URT US FTI P P lient US Micro Type- lient
3 Different test points used in design: TPx - Test point pad. TPHx - Through Hole Pad Large (for standard 0.1" header). Also used on IO Matrix (IOMx)
NXP VKIT-SZV Table of ontents 0 LOK IGRM N NOTS 0 I/O Headers 0 Power/MU 0 Peripherals 0 US/OSM Revisions Rev escription esigner ate X Initial raft 00 Release 0/0/ X hanged MU to SZV 0// U T I O N : This
8V Title SCHEMATIC, 8V89317EVB REV A. Date: Friday, June 14, Power Supply. XTAL Interface. 12.8MHz TCXO/OCXO LED Status IN1 OUT1
isclaimer: IT is providing this schematic for reference purposes only. lthough the schematic was taken from a known working design, it is being provided "as is" without any express or implied warranty
Features. Symbol Parameter N-Channel P-Channel Units. Drain-Source Voltage, Power Supply Voltage V V GSS. Gate-Source Voltage, 8-8 V I D
FC6C ual N & P Channel, igital FET General escription These dual N & P Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
DAC PLAY0 PLAY0 CT7601 DAC REC ADC REC RCA * 2. Power LDO RCA. RCA * 2 SPDIF output x2 RCA RCA RCA. Ext. MCU POR. PWM LED x 2. SPDIF input x 1.
R * SPIF output x Power LO R * R R SPIF input x POR Flash PWM LE x PM00 Lightning() P 0x0 0pin Type connector US 0pin For Lightning & P T0 RE PLY0 PLY H Sel Stereo T0 PLY0 T0 0x PLY 0x PM00 R Ext. MU H
PA50 Amplifier Operation and Maintenance Manual
Eclipse Series RF Technology rfinfo@rftechnology.com.au October 00 Revision PA0 Amplifier Operation and Maintenance Manual This manual is produced by RF Technology Pty Ltd 0/ Leighton Place, Hornsby NSW
0603/15p/10v L R/100MHz. 100nF/50V. 100nF/16V. 100nF/50V C105 C106 C108 C107 GND GND GND GND
+V +V 00nF/0V 00nF/0V 00nF/0V 00R/00MHz.µF/0V 00nF/V 00nF/V 0K K n.b. 0k 0k 00/p/0v 00/p/0v MHZ-.X. 00nF/V 0R 0R µ/v MK0XVLK MK0XVLK 00nF/0V 00nF/0V µ/v 00R/00MHz 0R 0 0 0 L0 0 0 R0 R0 R0 R0 L0 L0 Y0 0
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DATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 22 Feb 4 24 Feb 6 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN 1
DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 1999 Apr 12 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
Sirius-Rx-232. Sirius-Tx-232. SIRIUS-Rx. STATUS Prog RC-5. SIRIUS-Rx. Prog RCA-5 DAB-SDA DAB-SCL STAYUS AM-SMETER POWER-ON POWER-ON CE-PLL
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INSTRUCTIONS FOR ASSEMBLY AND OPERATION
diytube Poseidon Driver for the Dynaco Mark III, IV and DIY INSTRUCTIONS FOR ASSEMBLY AND OPERATION Price $0.00 C Star Ground 0VDC J R6 00K 0VDC K R6 K C.uF G KT: blu/wht & grn/wht V AU 6 a a'' R0 6K,
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HIgh Voltage chip Analysis Circuit (HIVAC)
ate: esigner: RWING NO: SLE: SHEET: OF TOP MK HIgh Voltage chip nalysis ircuit (HIV) March H_I_RSEL H_I_RSEL H_I_SEL H_I_ H_I_ H_I_ H_I_SEL H_I_SW H_I_S H_I_S H_I_S H_I_P H_I_P H_I_P H_I_P H_I_PSH H_I_PSL
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a Preliminary Technical ata FEATURES Position Potentiometer Replacement 0K, 00K, M, Ohm Internal Power ON Mid-Scale Preset +. to +.V Single-Supply; ±.V ual-supply Operation I C Compatible Interface APPLICATIONS
DATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D12 Supersedes data of 1999 Apr 23 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
Host MSP430. dacqs_host_board 12/7/2016 9:26 PM. U1 Value +3V3 AVCC_HOST UART_1_TX UART_1_RX MSP_SCLK UART_2_TX UART_2_RX CUTDOWN_EN MSP_SS
+V Host MSP +V R MSP_SS MSP_MOSI MSP_MISO V_HOST MOTOR_T_VSNS_ OMMS_MOSI OMMS_MISO OMMS_SLK OMMS_SS URT TX URT RX V V V V P._T._M_RTLK VRF-_VRF- P._T._TLK_OUT VRF+_VRF+ P._T._TLK_OUT P._T._UST P._T._UST
DISCRETE SEMICONDUCTORS DATA SHEET. PMMT591A PNP BISS transistor. Product specification Supersedes data of 2001 Jun 11.
DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 2001 Jun 11 2004 Jan 13 FETURES High current (max. 1 ) Low collector-emitter saturation voltage ensures reduced power consumption. PPLICTIONS Battery
Revisions. TWR-LCD-RGB Drawn by: Initial Release 15-JUL-11
Table of ontents Notes lock iagram isplay and Tower onnectors MU & apacitive Touch kt Rev X X escription Revisions Initial Release ate -JUL- pproved hanged Power L colours-jul- Removed J and J dded J &
+3.3V PRE_EMPH_0 DIST_GAIN_1 -JTAG_EMU JTAG_TMS -JTAG_TRST JTAG_TCLK JTAG_TDO PA_MUTE JTAG_TDI TCK TRST EMU VDDEXT1 TMS ADSP21375 GND31 GND7 GND32
REV Eng ate: Revision escription C E F ECN# JT_TI JT_TO JT_TRT JT_TCLK JT_TM JT_EMU P_MUTE PRE_EMPH_0 IT_IN_.V 0 9 9 0 9 9 0 9 90 0.V C 0 9 0 0 0 9 9 0 9 REET 0 C C C0 C C9 HEET INEX ECRIPTION URT_TX R.V
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Distributing Tomorrow s Technologies For Today s Designs Toll-Free:
2W, Ultra-High Isolation DIP, Single & DC/DC s Key Features Low Cost 6 Isolation MTBF > 6, Hours Short Circuit Protection Input, and 24 Output,, 1, {, { and {1 Regulated Outputs Low Isolation Capacitance
MAU100 Series. 1W, Miniature SIP, Single & Dual Output DC/DC Converters MINMAX. Key Features
W, Miniature SIP, Single & Dual Output DC/DC s Key Features Efficiency up to % 000 Isolation MTBF >,000,000 Hours Low Cost Input,, and Output 3.3,,9,,,{,{9,{ and { Temperature Performance -0] to +] UL
2 Notes 3 MC9S08LG32CLK 4 Touch Sensors 1 5 Touch Sensors 2 6 Power 7 OSBDM 8 USB COM
Table of ontents Notes MS0LGLK Touch Sensors Touch Sensors Power OSM US OM L Revisions Rev escription X First raft X Replaced, M RN with sigle resistors Updated Power section Swapped LE_ER, with ER, to
SVS 5V & 3V. isplsi_2032lv
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DISCRETE SEMICONDUCTORS DATA SHEET. BFR106 NPN 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION PINNING NPN silicon planar epitaxial transistor in a plastic SOT3 envelope. It is primarily intended
A Power, JTAG, LEDs FPGA_TCK FPGA_TDO FPGA_TMS FPGA_TRST FPGA_TDI nanofip_misc.sch
opyright ERN. This documentation describes Open Hardware and is licensed under the ERN OHL v... You may redistribute and modify this under the terms of the ERN OHL v... (http://ohwr.org/ernohl). This documentation
01 TITLE PAGE 02 MCU 03 DEBUG INTERFACE 05 POWER BRIDGE 06 MOSFET DRIVERS / VI SENSING XSKEAZ128REFDES
Table of ontents 0 TITLE PGE 0 MU 0 EUG INTERFE 0 SUPPLY 0 POWER RIGE 0 MOSFET RIVERS / VI SENSING utomotive Product Group 0 William annon rive West ustin, T 9 esigner:. ZUZEK rawn by:. ZUZEK pproved: