EE 330 Lecture 16. MOSFET Modeling CMOS Process Flow
|
|
- Victor Lee
- 6 years ago
- Views:
Transcription
1 EE 330 Lecture 16 MOSFET Modeling CMOS Process Flow
2 Model Extensions 300 Id Vds Existing Model Id Slope is not Actual Device Vds
3 Model Extensions Id 150 I D 0 μc μc OX OX W V L W 2L GS 0 V V 2 V 2 V V 1 V GS T T DS DS DS Note: This introduces small discontinuity (not shown) in model at SAT/Triode transition V GS V V GS V GS T V V T T Vds V V DS DS V V GS GS V V T T
4 Further Model Extensions Existing model does not depend upon the bulk voltage! Observe that changing the bulk voltage will change the electric field in the channel region! V DS V GS ID V BS I B I G E (V BS small)
5 Further Model Extensions Existing model does not depend upon the bulk voltage! Observe that changing the bulk voltage will change the electric field in the channel region! V DS V GS ID V BS I B I G E (V BS small) Changing the bulk voltage will change the thickness of the inversion layer Changing the bulk voltage will change the threshold voltage of the device V V V T T 0 B S
6 Typical Effects of Bulk on Threshold Voltage for n-channel Device V T V T 0 V B S 1 0.4V V V T V T0 ~ -5V V BS Bulk-Diffusion Generally Reverse Biased (V BS < 0 or at least less than 0.3V) for n-channel Shift in threshold voltage with bulk voltage can be substantial Often V BS =0
7 Typical Effects of Bulk on Threshold Voltage for n-channel Device V T V T 0 V B S 1 0.4V V V T ΔV=? V T0 ~ -5V V BS V V -V V T T T 0 B S V V T
8 Typical Effects of Bulk on Threshold Voltage for p-channel Device T T 0 B S V V V 1 0.4V V V BS V T0 V T Bulk-Diffusion Generally Reverse Biased (V BS > 0 or at least greater than -0.3V) for n-channel Same functional form as for n-channel devices but V T0 is now negative and the magnitude of V T still increases with the magnitude of the reverse bias
9 Model Extension Summary I I G B V V GS T W V L 2 W 2 μc V V 1 V V V V V V 2L DS I μc V V V V V V V V D OX GS T DS GS T DS GS T OX GS T DS GS T DS GS T V T V T0 V BS Model Parameters : {μ,c OX,V T0,φ,γ,λ} Design Parameters : {W,L} but only one degree of freedom W/L
10 Id Operation Regions by Applications I D Triode Region Saturation Region Analog Circuits Cutoff Region Vds Digital Circuits V DS Most analog circuits operate in the saturation region (basic VVR operates in triode and is an exception) Most digital circuits operate in triode and cutoff regions and switch between these two with Boolean inputs
11 Model Extension (short devices) 0 V V GS T W V L 2 W 2L DS I μc V V V V V V V V D OX GS T DS GS T DS GS T 2 μc V V V V V V V OX GS T GS T DS GS T As the channel length becomes very short, velocity saturation will occur in the channel and this will occur with electric fields around 2V/u. So, if a gate length is around 1u, then voltages up to 2V can be applied without velocity saturation. But, if gate length decreases and voltages are kept high, velocity saturation will occur 0 V V GS T W I μc V V V V V V V D OX GS T DS GS T DS 1 GS L 1 W μc V V V V V V 2 OX GS T GS T DS 1 GS L V V α is the velocity saturation index, 2 α 1 T T 2
12 Model Extension (short devices) 0 V V GS T W I μc V V V V V V V D OX GS T DS GS T DS 1 GS L 1 W μc V V V V V V 2 OX GS T GS T DS 1 GS L V V α is the velocity saturation index, 2 α 1 T T 2 No longer a square-law model (some term it an α-power model) For long devices, α=2 Channel length modulation (λ) and bulk effects can be added to the velocity Saturation as well Degrading of α is not an attractive limitation of the MOSFET
13 Model Extension (BSIM model)
14 Model Errors with Different W/L Values I D Actual Modeled with one value of L, W Modeled with another value of L, W V GS3 V GS2 V GS1 V DS Binning models can improve model accuracy
15 BSIM Binning Model - Bin on device sizes - multiple BSIM models! With 32 bins, this model has 3040 model parameters!
16 Model Changes with Process Variations (n-ch characteristics shown) I D TT FS or FF (Fast n, slow p or Fast n, fast p ) SS or SF (Slow n, slow p or Slow n, fast p ) V GS3 V GS2 V GS1 V DS Corner models can improve model accuracy
17 BSIM Corner Models with Binning - Often 4 corners in addition to nominal TT, FF, FS, SF, and SS - bin on device sizes With 32 size bins and 4 corners, this model has 15,200 model parameters!
18 How many models of the MOSFET do we have? Switch-level model (2) Square-law model Square-law model (with λ and bulk additions) α-law model (with λ and bulk additions) BSIM model BSIM model (with binning extensions) BSIM model (with binning extensions and process corners)
19 The Modeling Challenge I D Actual Modeled with one model V GS3 (and W/L variations or Process Variations) Local Agreement with Any Model V GS2 (and W/L variations or Process Variations) V GS1 (and W/L variations or Process Variations) V DS (and W/L variations or Process Variations) I G I D V DS I = f V,V D 1 GS DS I = f V,V G 2 GS DS I = f V,V B 3 GS DS V GS I B V BS = 0 Difficult to obtain analytical functions that accurately fit actual devices over bias, size, and process variations
20 Model Status Simple dc Model Square-Law Model Small Signal Better Analytical dc Model Sophisticated Model for Computer Simulations BSIM Model Square-Law Model (with extensions for λ,γ effects) Short-Channel α-law Model Frequency Dependent Small Signal Simpler dc Model Switch-Level Models Ideal switches R SW and C GS
21 In the next few slides, the models we have developed will be listed and reviewed Square-law Model Switch-level Models Extended Square-law model Short-channel model BSIM Model BSIM Binning Model Corner Models
22 Square-Law Model I D V GS4 V GS3 V DS V GS2 V GS1 0 VGS VT W V L 2 W 2L DS I μc V V V V V V V V D OX GS T DS GS T DS GS T 2 μc V V V V V V V OX GS T GS T DS GS T Model Parameters : {μ,c OX,V T0 } Design Parameters : {W,L} but only one degree of freedom W/L
23 Switch-Level Models Drain Gate G D Source R SW C GS V GS Switch closed for V GS = 1 S Switch-level model including gate capacitance and drain resistance C GS and R SW dependent upon device sizes and process For minimum-sized devices in a 0.5u process 2KΩ n channel C GS 1.5fF R sw 6KΩ p channel Considerable emphasis will be placed upon device sizing to manage C GS and R SW Model Parameters : {C GS,R SW }
24 Extended Square-Law Model I I G B V V GS T W V L 2 W 2 μc V V 1 V V V V V V 2L DS I μc V V V V V V V V D OX GS T DS GS T DS GS T OX GS T DS GS T DS GS T V T V T0 V BS Model Parameters : {μ,c OX,V T0,φ,γ,λ} Design Parameters : {W,L} but only one degree of freedom W/L
25 Short-Channel Model 0 V V GS T W I μc V V V V V V V D OX GS T DS GS T DS 1 GS L 1 W μc V V V V V V 2 OX GS T GS T DS 1 GS L V V T T 2 α is the velocity saturation index, 2 α 1 Channel length modulation (λ) and bulk effects can be added to the velocity Saturation as well
26 BSIM model Note this model has 95 model parameters!
27 BSIM Binning Model - Bin on device sizes - multiple BSIM models! With 32 bins, this model has 3040 model parameters!
28 BSIM Corner Models - Often 4 corners in addition to nominal TT, FF, FS, SF, and SS - five different BSIM models! TT: typical-typical FF: fast n, fast p FS: fast n, slow p SF: slow n, fast p SS: slow n, slow p With 4 corners, this model has 475 model parameters!
29 Accuracy Complexity Hierarchical Model Comparisons BSIM Binning Models Analytical Numerical (for simulation only) L Number of Model Parameters BSIM Models Number of Model Parameters Square-Law Models Number of Model Parameters Switch-Level Models Approx 3000 (for 30 bins) Approx to 6 W Number of Model Parameters 0 to 2
30 Corner Models Basic Model FF (Fast n, Fast p) FS (Fast n, Slow p) TT Typical-Typical SF (Slow n, Fast p) SS (Slow n, Slow p) Corner Model Applicable at any level in model hierarchy (same model, different parameters) Often 4 corners (FF, FS, SF, SS) used but sometimes many more Designers must provide enough robustness so good yield at all corners
31 n-channel. p-channel modeling Source Gate Drain Bulk I D 3 V GS4 2.5 D n-channel MOSFET D V GS3 V GS2 G S G D S VDS GS4 GS3 GS2 GS1 V GS1 V V V V > 0 V DS G B (for enhancement devices) G I G V GS I D D S I B B S V BS V DS 0 VGS VTn W V L 2 W 2L I =I =0 DS I μ C V V V V V V V V D n OX GS Tn DS GS Tn DS GS Tn G B 2 μ C V V V V V V V n OX GS Tn GS Tn DS GS Tn Positive V DS and V GS cause a positive I D
32 Bulk Source n-channel. p-channel modeling Gate Drain (for enhancement devices) VTp 0 p-channel MOSFET S S G G D S D V GS G I G G I D B S D I B D V BS B V DS 0 V V GS Tp W V L 2 W 2L I =I =0 DS I -μ C V V V V V V V V D p OX GS Tp DS GS Tp DS GS Tp G B 2 -μ C V V V V V V V p OX GS Tp GS Tp DS GS Tp Negative V DS and V GS cause a negative I D Functional form of models are the same, just sign differences and some parameter differences (usually mobility is the most important)
33 Bulk Source n-channel. p-channel modeling Gate Drain (for enhancement devices) VTp 0 p-channel MOSFET S S G G S D G D S D B 0 V V GS Tp W V L 2 W 2L I =I =0 DS I -μ C V V V V V V V V D p OX GS Tp DS GS Tp DS GS Tp G B 2 -μ C V V V V V V V p OX GS Tp GS Tp DS GS Tp V GS G I G I D B D I B V BS V DS V GS G I G S B I B -I D D V BS V DS Actually should use C OXp and C OXn but they are usually almost identical in most processes μ n 3μ p May choose to model I D which will be nonnegative
34 n-channel. p-channel modeling Bulk Source Gate Drain V GS G I G I D S B D I B V BS V DS p-channel MOSFET (for enhancement devices) 0 V V GS Tp W V L 2 W 2L I =I =0 DS I -μ C V V V V V V V V D p OX GS Tp DS GS Tp DS GS Tp G B 2 -μ C V V V V V V V p OX GS Tp GS Tp DS GS Tp 0 V V GS Tp W V L 2 W 2L I =I =0 DS I μ C V V V V V V V V D p OX GS Tp DS GS Tp DS GS Tp G Alternate equivalent representation B 2 μ C V V V V V V V p OX GS Tp GS Tp DS GS Tp These look like those for the n-channel device but with
35 D n-channel. p-channel modeling D S S G G G G S D S D D D G B G B S S G I G V GS I D D I B B V BS V DS V GS G I G S B I B V BS V DS S I D D I D V GS4 V GS3 Models essentially the same with different signs and model parameters 1 V GS V GS V DS VDS VGS4 VGS3 VGS2 V GS1> 0 0 VGS VTn W V L 2 W 2 μ C V V V V V V V 2L I =I =0 DS I μ C V V V V V V V V D n OX GS Tn DS GS Tn DS GS Tn G B n OX GS Tn GS Tn DS GS Tn 0 V V GS Tp W V L 2 W 2L I =I =0 DS I -μ C V V V V V V V V D p OX GS Tp DS GS Tp DS GS Tp G B 2 -μ C p OX VGS VTp VGS VTp VDS VGS VTp
36 Model Relationships Determine R SW and C GS for an n-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u (Assume μc OX =100μAV -2, C OX =2.5fFu -2,V T0 =1V, V DD =3.5V, V SS =0) 0 V V GS T W V L 2 W 2L DS I μc V V V V V V V V D OX GS T DS GS T DS GS T 2 μc V V V V V V V OX GS T GS T DS GS T when SW is on, operation is deep triode
37 Model Relationships Determine R SW and C GS for an n-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u (Assume μc OX =100μAV -2, C OX =2.5fFu -2,V T0 =1V, V DD =3.5V, V SS =0) When on operating in deep triode W V W L 2 L DS I μc V V V μc V V V D OX GS T DS OX GS T DS V 1 1 DS R = 4K SQ I W 1 D V GS =VDD μc V V ( E 4) OX GS T L V GS =3.5V 1 C GS = C OX WL = (2.5fFµ -2 )(1µ 2 ) = 2.5fF
38 Model Relationships Determine R SW and C GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u ( C OX =2.5fFu -2,V T0 =1V, V DD =3.5V, V SS =0) Observe µ n \ µ p 3 0 V V GS T W V L 2 W 2L DS -I μc V V V V V V V V D OX GS T DS GS T DS GS T 2 μc V V V V V V V OX GS T GS T DS GS T When SW is on, operation is deep triode
39 Model Relationships Determine R SW and C GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u ( C OX =2.5fFu -2,V T0 =1V, V DD =3.5V, V SS =0) Observe µ n \ µ p 3 W V W L 2 L DS -I μ C V V V μ C V V V D p OX GS T DS p OX GS T DS -V 1 1 DS R = 12K SQ -I W 1 1 D V GS =VDD μ C V V ( 4) p OX GS T L E V GS =3.5V 3 1 C GS = C OX WL = (2.5fFµ -2 )(1µ 2 ) = 2.5fF Observe the resistance of the p-channel device is approximately 3 times larger than that of the n-channel device for same bias and dimensions!
40 Modeling of the MOSFET Goal: Obtain a mathematical relationship between the port variables of a device. I f V,V,V I I D G B 1 f f 2 3 GS DS BS VGS,V DS,VBS V GS,V DS,VBS Drain V DS I D I B Gate Bulk I D Simple dc Model V GS V BS Small Signal Better Analytical dc Model Sophisticated Model for Computer Simulations Frequency Dependent Small Signal Simpler dc Model
41 Small-Signal Model Goal with small signal model is to predict performance of circuit or device in the vicinity of an operating point Operating point is often termed Q-point
42 Small-Signal Model y Y Q Q-point X Q x Analytical expressions for small signal model will be developed later
43 Design Rules Technology Files Process Flow (Fabrication Technology) Model Parameters
44 n-well n-well n- p-
45
46
47 Bulk CMOS Process Description n-well process Single Metal Only Depicted Double Poly This type of process dominates what is used for high-volume lowcost processing of integrated circuits today Many process variants and specialized processes are used for lowervolume or niche applications Emphasis in this course will be on the electronics associated with the design of integrated electronic circuits in processes targeting highvolume low-cost products where competition based upon price differentiation may be acute Basic electronics concepts, however, are applicable for lower-volume or niche applicaitons
48 Components Shown n-channel MOSFET p-channel MOSFET Poly Resistor Doubly Poly Capacitor
49 C D A A B B C D
50 Consider Basic Components Only Well Contacts and Guard Rings Will be Discussed Later
51 A A B B
52 A A B B
53 Metal details hidden to reduce clutter A A D G S B D B S B n-channel MOSFET G
54 A A D G S B B B W L
55 A A Capacitor Resistor p-channel MOSFET B B n-channel MOSFET
56 n-well n-well n- p-
57 N-well Mask A A B B
58 N-well Mask A A B B
59 Detailed Description of First Photolithographic Steps Only Top View Cross-Section View
60 ~ Blank Wafer Implant n-well Photoresist Mask p-doped Substrate Will use positive photoresist (exposed region soluble in developer) A A B Develop Expose B
61 Develop N-well Exposure Photoresist Mask A-A Section B-B Section
62 Implant A-A Section B-B Section
63 N-well Mask A-A Section B-B Section
64 n-well n-well n- p-
65 Active Mask A A B B
66 Active Mask A A B B
67 Active Mask Field Oxide A-A Section Field Oxide Field Oxide Field Oxide B-B Section
68 n-well n-well n- p-
69 Poly1 Mask A A B B
70 Poly1 Mask A A B B
71 Poly plays a key role in all four types of devices! A A Capacitor Resistor P-channel MOSFET B B n-channel MOSFET
72 Poly 1 Mask A-A Section Gate Oxide Gate Oxide B-B Section
73 n-well n-well n- p-
74
75 Poly 2 Mask A A B B
76 Poly 2 Mask A A B B
77 Poly 2 Mask A-A Section B-B Section
78 n-well n-well n- p-
79
80 P-Select A A B B
81 P-Select A A B B
82 P-Select Mask p-diffusion p-diffusion A-A Section Note the gate is self aligned!! B-B Section
83 n-select Mask n-diffusion A-A Section n-diffusion B-B Section
84 n-well n-well n- p-
85
86
87 Contact Mask A A B B
88 Contact Mask A A B B
89 Contact Mask A-A Section B-B Section
90 n-well n-well n- p-
91
92
93 Metal 1 Mask A A B B
94 Metal 1 Mask A A B B
95 Metal Mask A-A Section B-B Section
96 A A B B
97 A A Capacitor Resistor P-channel MOSFET B B n-channel MOSFET
98 End of Lecture 16
EE 330 Lecture 17. MOSFET Modeling CMOS Process Flow
EE 330 Lecture 17 MOSFET Modeling CMOS Process Flow Review from Last Lecture Limitations of Existing Models V DD V OUT V OUT V DD?? V IN V OUT V IN V IN V DD Switch-Level Models V DD Simple square-law
More informationEE 330 Lecture 16. MOS Device Modeling p-channel n-channel comparisons Model consistency and relationships CMOS Process Flow
EE 330 Lecture 16 MOS Device Modeling p-channel n-channel comparisons Model consistency and relationships CMOS Process Flow Review from Last Time Operation Regions by Applications Id I D 300 250 200 150
More informationEE 330 Lecture 18. Small-signal Model (very preliminary) Bulk CMOS Process Flow
EE 330 Lecture 18 Small-signal Model (very preliminary) Bulk CMOS Process Flow Review from Last Lecture How many models of the MOSFET do we have? Switch-level model (2) Square-law model Square-law model
More informationEE 330 Lecture 16. Devices in Semiconductor Processes. MOS Transistors
EE 330 Lecture 16 Devices in Semiconductor Processes MOS Transistors Review from Last Time Model Summary I D I V DS V S I B V BS = 0 0 VS VT W VDS ID = μcox VS VT VDS VS V VDS VS VT L T < W μc ( V V )
More informationEE 330 Class Seating
1 2 3 4 5 6 EE 330 Class Seating 1 2 3 4 5 6 7 8 Zechariah Daniel Liuchang Andrew Brian Difeng Aimee Julien Di Pettit Borgerding Li Mun Crist Liu Salt Tria Erik Nick Bijan Wing Yi Pangzhou Travis Wentai
More informationEE 330 Lecture 16. MOSFET Modeling CMOS Process Flow
EE 330 Lecture 16 MOFET Modeling CMO Process Flow Review from Last Lecture Limitations of Existing Models V V OUT V OUT V?? V IN V OUT V IN V IN V witch-level Models V imple square-law Model Logic ate
More informationEE 230 Lecture 31. THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR
EE 23 Lecture 3 THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR Quiz 3 Determine I X. Assume W=u, L=2u, V T =V, uc OX = - 4 A/V 2, λ= And the number is? 3 8 5 2? 6 4 9 7 Quiz 3
More informationMOS Transistor Theory
MOS Transistor Theory So far, we have viewed a MOS transistor as an ideal switch (digital operation) Reality: less than ideal EE 261 Krish Chakrabarty 1 Introduction So far, we have treated transistors
More informationEE105 - Fall 2006 Microelectronic Devices and Circuits
EE105 - Fall 2006 Microelectronic Devices and Circuits Prof. Jan M. Rabaey (jan@eecs) Lecture 7: MOS Transistor Some Administrative Issues Lab 2 this week Hw 2 due on We Hw 3 will be posted same day MIDTERM
More informationLecture 4: CMOS Transistor Theory
Introduction to CMOS VLSI Design Lecture 4: CMOS Transistor Theory David Harris, Harvey Mudd College Kartik Mohanram and Steven Levitan University of Pittsburgh Outline q Introduction q MOS Capacitor q
More informationEE 330 Lecture 37. Digital Circuits. Other Logic Families. Propagation Delay basic characterization Device Sizing (Inverter and multiple-input gates)
EE 330 Lecture 37 Digital Circuits Other Logic Families Static Power Dissipation Propagation Delay basic characterization Device Sizing (Inverter and multiple-input gates) Review from Last Time Inverter
More informationEE105 - Fall 2005 Microelectronic Devices and Circuits
EE105 - Fall 005 Microelectronic Devices and Circuits ecture 7 MOS Transistor Announcements Homework 3, due today Homework 4 due next week ab this week Reading: Chapter 4 1 ecture Material ast lecture
More informationQuantitative MOSFET. Step 1. Connect the MOS capacitor results for the electron charge in the inversion layer Q N to the drain current.
Quantitative MOSFET Step 1. Connect the MOS capacitor results for the electron charge in the inversion layer Q N to the drain current. V DS _ n source polysilicon gate y = y * 0 x metal interconnect to
More informationMOSFET: Introduction
E&CE 437 Integrated VLSI Systems MOS Transistor 1 of 30 MOSFET: Introduction Metal oxide semiconductor field effect transistor (MOSFET) or MOS is widely used for implementing digital designs Its major
More informationEE 434 Lecture 33. Logic Design
EE 434 Lecture 33 Logic Design Review from last time: Ask the inverter how it will interpret logic levels V IN V OUT V H =? V L =? V LARGE V H V L V H Review from last time: The two-inverter loop X Y X
More informationEE 230 Lecture 33. Nonlinear Circuits and Nonlinear Devices. Diode BJT MOSFET
EE 230 Lecture 33 Nonlinear Circuits and Nonlinear Devices Diode BJT MOSFET Review from Last Time: n-channel MOSFET Source Gate L Drain W L EFF Poly Gate oxide n-active p-sub depletion region (electrically
More informationEE105 Fall 2014 Microelectronic Devices and Circuits. NMOS Transistor Capacitances: Saturation Region
EE105 Fall 014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 NMOS Transistor Capacitances: Saturation Region Drain no longer connected to channel
More informationLecture 5: CMOS Transistor Theory
Lecture 5: CMOS Transistor Theory Slides courtesy of Deming Chen Slides based on the initial set from David Harris CMOS VLSI Design Outline q q q q q q q Introduction MOS Capacitor nmos I-V Characteristics
More informationECE 342 Electronic Circuits. 3. MOS Transistors
ECE 342 Electronic Circuits 3. MOS Transistors Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu 1 NMOS Transistor Typically L = 0.1 to 3 m, W = 0.2 to
More informationChapter 2 CMOS Transistor Theory. Jin-Fu Li Department of Electrical Engineering National Central University Jungli, Taiwan
Chapter 2 CMOS Transistor Theory Jin-Fu Li Department of Electrical Engineering National Central University Jungli, Taiwan Outline Introduction MOS Device Design Equation Pass Transistor Jin-Fu Li, EE,
More informationMOS Transistor Properties Review
MOS Transistor Properties Review 1 VLSI Chip Manufacturing Process Photolithography: transfer of mask patterns to the chip Diffusion or ion implantation: selective doping of Si substrate Oxidation: SiO
More informationELEC 3908, Physical Electronics, Lecture 26. MOSFET Small Signal Modelling
ELEC 3908, Physical Electronics, Lecture 26 MOSFET Small Signal Modelling Lecture Outline MOSFET small signal behavior will be considered in the same way as for the diode and BJT Capacitances will be considered
More informationLecture 210 Physical Aspects of ICs (12/15/01) Page 210-1
Lecture 210 Physical Aspects of ICs (12/15/01) Page 210-1 LECTURE 210 PHYSICAL ASPECTS OF ICs (READING: Text-Sec. 2.5, 2.6, 2.8) INTRODUCTION Objective Illustrate the physical aspects of integrated circuits
More informationPractice 3: Semiconductors
Practice 3: Semiconductors Digital Electronic Circuits Semester A 2012 VLSI Fabrication Process VLSI Very Large Scale Integration The ability to fabricate many devices on a single substrate within a given
More informationLecture 13 MOSFET as an amplifier with an introduction to MOSFET small-signal model and small-signal schematics. Lena Peterson
Lecture 13 MOSFET as an amplifier with an introduction to MOSFET small-signal model and small-signal schematics Lena Peterson 2015-10-13 Outline (1) Why is the CMOS inverter gain not infinite? Large-signal
More informationFig. 1 CMOS Transistor Circuits (a) Inverter Out = NOT In, (b) NOR-gate C = NOT (A or B)
1 Introduction to Transistor-Level Logic Circuits 1 By Prawat Nagvajara At the transistor level of logic circuits, transistors operate as switches with the logic variables controlling the open or closed
More informationChapter 4 Field-Effect Transistors
Chapter 4 Field-Effect Transistors Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 5/5/11 Chap 4-1 Chapter Goals Describe operation of MOSFETs. Define FET characteristics in operation
More informationEE 330 Lecture 36. Digital Circuits. Transfer Characteristics of the Inverter Pair One device sizing strategy Multiple-input gates
EE 330 Lecture 36 Digital Circuits Transfer Characteristics of the Inverter Pair One device sizing strategy Multiple-input gates Review from Last Time The basic logic gates It suffices to characterize
More informationEE115C Winter 2017 Digital Electronic Circuits. Lecture 3: MOS RC Model, CMOS Manufacturing
EE115C Winter 2017 Digital Electronic Circuits Lecture 3: MOS RC Model, CMOS Manufacturing Agenda MOS Transistor: RC Model (pp. 104-113) S R on D CMOS Manufacturing Process (pp. 36-46) S S C GS G G C GD
More informationECE 342 Electronic Circuits. Lecture 6 MOS Transistors
ECE 342 Electronic Circuits Lecture 6 MOS Transistors Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu 1 NMOS Transistor Typically L = 0.1 to 3 m, W = 0.2
More informationMOS Transistor Theory
CHAPTER 3 MOS Transistor Theory Outline 2 1. Introduction 2. Ideal I-V Characteristics 3. Nonideal I-V Effects 4. C-V Characteristics 5. DC Transfer Characteristics 6. Switch-level RC Delay Models MOS
More informationLecture 15: MOS Transistor models: Body effects, SPICE models. Context. In the last lecture, we discussed the modes of operation of a MOS FET:
Lecture 15: MOS Transistor models: Body effects, SPICE models Context In the last lecture, we discussed the modes of operation of a MOS FET: oltage controlled resistor model I- curve (Square-Law Model)
More informationECE 546 Lecture 10 MOS Transistors
ECE 546 Lecture 10 MOS Transistors Spring 2018 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu NMOS Transistor NMOS Transistor N-Channel MOSFET Built on p-type
More informationLecture 11: MOS Transistor
Lecture 11: MOS Transistor Prof. Niknejad Lecture Outline Review: MOS Capacitors Regions MOS Capacitors (3.8 3.9) CV Curve Threshold Voltage MOS Transistors (4.1 4.3): Overview Cross-section and layout
More informationLecture 3: CMOS Transistor Theory
Lecture 3: CMOS Transistor Theory Outline Introduction MOS Capacitor nmos I-V Characteristics pmos I-V Characteristics Gate and Diffusion Capacitance 2 Introduction So far, we have treated transistors
More informationDevice Models (PN Diode, MOSFET )
Device Models (PN Diode, MOSFET ) Instructor: Steven P. Levitan steve@ece.pitt.edu TA: Gayatri Mehta, José Martínez Book: Digital Integrated Circuits: A Design Perspective; Jan Rabaey Lab Notes: Handed
More informationEE 434 Lecture 34. Logic Design
EE 434 ecture 34 ogic Design Review from last time: Transfer characteristics of the static CMOS inverter (Neglect λ effects) Case 5 M cutoff, M triode V -V > V -V -V Tp V < V Tn V V V Tp Transfer characteristics
More informationNanoscale CMOS Design Issues
Nanoscale CMOS Design Issues Jaydeep P. Kulkarni Assistant Professor, ECE Department The University of Texas at Austin jaydeep@austin.utexas.edu Fall, 2017, VLSI-1 Class Transistor I-V Review Agenda Non-ideal
More informationP. R. Nelson 1 ECE418 - VLSI. Midterm Exam. Solutions
P. R. Nelson 1 ECE418 - VLSI Midterm Exam Solutions 1. (8 points) Draw the cross-section view for A-A. The cross-section view is as shown below.. ( points) Can you tell which of the metal1 regions is the
More informationToday s lecture. EE141- Spring 2003 Lecture 4. Design Rules CMOS Inverter MOS Transistor Model
- Spring 003 Lecture 4 Design Rules CMOS Inverter MOS Transistor Model Today s lecture Design Rules The CMOS inverter at a glance An MOS transistor model for manual analysis Important! Labs start next
More informationMOS Transistor I-V Characteristics and Parasitics
ECEN454 Digital Integrated Circuit Design MOS Transistor I-V Characteristics and Parasitics ECEN 454 Facts about Transistors So far, we have treated transistors as ideal switches An ON transistor passes
More informationFundamentals of the Metal Oxide Semiconductor Field-Effect Transistor
Triode Working FET Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor The characteristics of energy bands as a function of applied voltage. Surface inversion. The expression for the
More informationThe Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The Devices July 30, 2002 Goal of this chapter Present intuitive understanding of device operation Introduction
More informationIntroduction to CMOS VLSI. Chapter 2: CMOS Transistor Theory. Harris, 2004 Updated by Li Chen, Outline
Introduction to MOS VLSI Design hapter : MOS Transistor Theory copyright@david Harris, 004 Updated by Li hen, 010 Outline Introduction MOS apacitor nmos IV haracteristics pmos IV haracteristics Gate and
More information6.012 Electronic Devices and Circuits Spring 2005
6.012 Electronic Devices and Circuits Spring 2005 May 16, 2005 Final Exam (200 points) -OPEN BOOK- Problem NAME RECITATION TIME 1 2 3 4 5 Total General guidelines (please read carefully before starting):
More informationEEC 118 Lecture #2: MOSFET Structure and Basic Operation. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation
EEC 118 Lecture #2: MOSFET Structure and Basic Operation Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation Announcements Lab 1 this week, report due next week Bring
More informationECE315 / ECE515 Lecture-2 Date:
Lecture-2 Date: 04.08.2016 NMOS I/V Characteristics Discussion on I/V Characteristics MOSFET Second Order Effect NMOS I-V Characteristics ECE315 / ECE515 Gradual Channel Approximation: Cut-off Linear/Triode
More informationIntegrated Circuits & Systems
Federal University of Santa Catarina Center for Technology Computer Science & Electronics Engineering Integrated Circuits & Systems INE 5442 Lecture 10 MOSFET part 1 guntzel@inf.ufsc.br ual-well Trench-Isolated
More informationLecture 12: MOSFET Devices
Lecture 12: MOSFET Devices Gu-Yeon Wei Division of Engineering and Applied Sciences Harvard University guyeon@eecs.harvard.edu Wei 1 Overview Reading S&S: Chapter 5.1~5.4 Supplemental Reading Background
More informationELEC 3908, Physical Electronics, Lecture 23. The MOSFET Square Law Model
ELEC 3908, Physical Electronics, Lecture 23 The MOSFET Square Law Model Lecture Outline As with the diode and bipolar, have looked at basic structure of the MOSFET and now turn to derivation of a current
More informationChapter 20. Current Mirrors. Basics. Cascoding. Biasing Circuits. Baker Ch. 20 Current Mirrors. Introduction to VLSI
Chapter 20 Current Mirrors Basics Long Channel Matching Biasing Short Channel Temperature Subthreshold Cascoding Simple Low Voltage, Wide Swing Wide Swing, Short Channel Regulated Drain Biasing Circuits
More informationThe Devices: MOS Transistors
The Devices: MOS Transistors References: Semiconductor Device Fundamentals, R. F. Pierret, Addison-Wesley Digital Integrated Circuits: A Design Perspective, J. Rabaey et.al. Prentice Hall NMOS Transistor
More informationEE 435. Lecture 37. Parasitic Capacitances in MOS Devices. String DAC Parasitic Capacitances
EE 435 Lecture 37 Parasitic Capacitances in MOS Devices String DAC Parasitic Capacitances Parasitic Capacitors in MOSFET (will initially consider two) Parasitic Capacitors in MOSFET C GCH Parasitic Capacitors
More informationEE5311- Digital IC Design
EE5311- Digital IC Design Module 1 - The Transistor Janakiraman V Assistant Professor Department of Electrical Engineering Indian Institute of Technology Madras Chennai October 28, 2017 Janakiraman, IITM
More informationChapter 13 Small-Signal Modeling and Linear Amplification
Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 13-1 Chapter Goals Understanding of concepts related to: Transistors
More informationDevice Models (PN Diode, MOSFET )
Device Models (PN Diode, MOSFET ) Instructor: Steven P. Levitan steve@ece.pitt.edu TA: Gayatri Mehta, José Martínez Book: Digital Integrated Circuits: A Design Perspective; Jan Rabaey Lab Notes: Handed
More informationEE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits
EE 330 Lecture 22 Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits Exam 2 Friday March 9 Exam 3 Friday April 13 Review Session for Exam 2: 6:00
More informationCMOS Inverter (static view)
Review: Design Abstraction Levels SYSTEM CMOS Inverter (static view) + MODULE GATE [Adapted from Chapter 5. 5.3 CIRCUIT of G DEVICE Rabaey s Digital Integrated Circuits,, J. Rabaey et al.] S D Review:
More informationHigh-to-Low Propagation Delay t PHL
High-to-Low Propagation Delay t PHL V IN switches instantly from low to high. Driver transistor (n-channel) immediately switches from cutoff to saturation; the p-channel pull-up switches from triode to
More informationECE 438: Digital Integrated Circuits Assignment #4 Solution The Inverter
ECE 438: Digital Integrated Circuits Assignment #4 The Inverter Text: Chapter 5, Digital Integrated Circuits 2 nd Ed, Rabaey 1) Consider the CMOS inverter circuit in Figure P1 with the following parameters.
More informationEE 466/586 VLSI Design. Partha Pande School of EECS Washington State University
EE 466/586 VLSI Design Partha Pande School of EECS Washington State University pande@eecs.wsu.edu Lecture 8 Power Dissipation in CMOS Gates Power in CMOS gates Dynamic Power Capacitance switching Crowbar
More information6.012 Electronic Devices and Circuits
Page 1 of 10 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits Exam No. 2 Thursday, November 5, 2009 7:30 to
More informationENGR890 Digital VLSI Design Fall Lecture 4: CMOS Inverter (static view)
ENGR89 Digital VLSI Design Fall 5 Lecture 4: CMOS Inverter (static view) [Adapted from Chapter 5 of Digital Integrated Circuits, 3, J. Rabaey et al.] [Also borrowed from Vijay Narayanan and Mary Jane Irwin]
More informationElectronics Fets and Mosfets Prof D C Dube Department of Physics Indian Institute of Technology, Delhi
Electronics Fets and Mosfets Prof D C Dube Department of Physics Indian Institute of Technology, Delhi Module No. #05 Lecture No. #02 FETS and MOSFETS (contd.) In the previous lecture, we studied the working
More informationECE 497 JS Lecture - 12 Device Technologies
ECE 497 JS Lecture - 12 Device Technologies Spring 2004 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jose@emlab.uiuc.edu 1 NMOS Transistor 2 ρ Source channel charge density
More informationEE105 - Fall 2006 Microelectronic Devices and Circuits. Some Administrative Issues
EE105 - Fall 006 Microelectronic evices and Circuits Prof. Jan M. Rabaey (jan@eecs Lecture 8: MOS Small Signal Model Some Administrative Issues REIEW Session Next Week Tu Sept 6 6:00-7:30pm; 060 alley
More informationVLSI Design The MOS Transistor
VLSI Design The MOS Transistor Frank Sill Torres Universidade Federal de Minas Gerais (UFMG), Brazil VLSI Design: CMOS Technology 1 Outline Introduction MOS Capacitor nmos I-V Characteristics pmos I-V
More informationThe Devices. Jan M. Rabaey
The Devices Jan M. Rabaey Goal of this chapter Present intuitive understanding of device operation Introduction of basic device equations Introduction of models for manual analysis Introduction of models
More informationDigital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. The Devices. July 30, Devices.
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The July 30, 2002 1 Goal of this chapter Present intuitive understanding of device operation Introduction
More informationECE-305: Fall 2017 MOS Capacitors and Transistors
ECE-305: Fall 2017 MOS Capacitors and Transistors Pierret, Semiconductor Device Fundamentals (SDF) Chapters 15+16 (pp. 525-530, 563-599) Professor Peter Bermel Electrical and Computer Engineering Purdue
More informationECE 523/421 - Analog Electronics University of New Mexico Solutions Homework 3
ECE 523/42 - Analog Electronics University of New Mexico Solutions Homework 3 Problem 7.90 Show that when ro is taken into account, the voltage gain of the source follower becomes G v v o v sig R L r o
More informationELEC 3908, Physical Electronics, Lecture 27. MOSFET Scaling and Velocity Saturation
ELEC 3908, Physical Electronics, Lecture 27 MOSFET Scaling and Velocity Saturation Lecture Outline Industry push is always to pack more devices on a chip to increase functionality, which requires making
More informationEE 560 MOS TRANSISTOR THEORY PART 2. Kenneth R. Laker, University of Pennsylvania
1 EE 560 MOS TRANSISTOR THEORY PART nmos TRANSISTOR IN LINEAR REGION V S = 0 V G > V T0 channel SiO V D = small 4 C GC C BC substrate depletion region or bulk B p nmos TRANSISTOR AT EDGE OF SATURATION
More informationECE 415/515 ANALOG INTEGRATED CIRCUIT DESIGN
ECE 415/515 ANALOG INTEGRATED CIRCUIT DESIGN CMOS PROCESS CHARACTERIZATION VISHAL SAXENA VSAXENA@UIDAHO.EDU Vishal Saxena DESIGN PARAMETERS Analog circuit designers care about: Open-loop Gain: g m r o
More informationThe Devices. Devices
The The MOS Transistor Gate Oxyde Gate Source n+ Polysilicon Drain n+ Field-Oxyde (SiO 2 ) p-substrate p+ stopper Bulk Contact CROSS-SECTION of NMOS Transistor Cross-Section of CMOS Technology MOS transistors
More informationThe Physical Structure (NMOS)
The Physical Structure (NMOS) Al SiO2 Field Oxide Gate oxide S n+ Polysilicon Gate Al SiO2 SiO2 D n+ L channel P Substrate Field Oxide contact Metal (S) n+ (G) L W n+ (D) Poly 1 Transistor Resistance Two
More informationEECS 141: FALL 05 MIDTERM 1
University of California College of Engineering Department of Electrical Engineering and Computer Sciences D. Markovic TuTh 11-1:3 Thursday, October 6, 6:3-8:pm EECS 141: FALL 5 MIDTERM 1 NAME Last SOLUTION
More informationCMPEN 411 VLSI Digital Circuits. Lecture 03: MOS Transistor
CMPEN 411 VLSI Digital Circuits Lecture 03: MOS Transistor Kyusun Choi [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] CMPEN 411 L03 S.1
More informationLecture 04 Review of MOSFET
ECE 541/ME 541 Microelectronic Fabrication Techniques Lecture 04 Review of MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) What is a Transistor? A Switch! An MOS Transistor V GS V T V GS S Ron D
More informationHW 5 posted due in two weeks Lab this week Midterm graded Project to be launched in week 7
HW 5 posted due in two weeks Lab this week Midterm graded Project to be launched in week 7 2 What do digital IC designers need to know? 5 EE4 EECS4 6 3 0< V GS - V T < V DS Pinch-off 7 For (V GS V T )
More informationPower Dissipation. Where Does Power Go in CMOS?
Power Dissipation [Adapted from Chapter 5 of Digital Integrated Circuits, 2003, J. Rabaey et al.] Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit
More information3. Design a stick diagram for the PMOS logic shown below [16] Y = (A + B).C. 4. Design a layout diagram for the CMOS logic shown below [16]
Code No: RR420203 Set No. 1 1. (a) Find g m and r ds for an n-channel transistor with V GS = 1.2V; V tn = 0.8V; W/L = 10; µncox = 92 µa/v 2 and V DS = Veff + 0.5V The out put impedance constant. λ = 95.3
More informationLecture 28 Field-Effect Transistors
Lecture 8 Field-Effect Transistors Field-Effect Transistors 1. Understand MOSFET operation.. Analyze basic FET amplifiers using the loadline technique. 3. Analyze bias circuits. 4. Use small-signal equialent
More informationCMPEN 411 VLSI Digital Circuits. Lecture 04: CMOS Inverter (static view)
CMPEN 411 VLSI Digital Circuits Lecture 04: CMOS Inverter (static view) Kyusun Choi [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] CMPEN
More informationContent. MIS Capacitor. Accumulation Depletion Inversion MOS CAPACITOR. A Cantoni Digital Switching
Content MIS Capacitor Accumulation Depletion Inversion MOS CAPACITOR 1 MIS Capacitor Metal Oxide C ox p-si C s Components of a capacitance model for the MIS structure 2 MIS Capacitor- Accumulation ρ( x)
More informationLecture 9 MOSFET(II) MOSFET I V CHARACTERISTICS(contd.)
Lecture 9 MOSFET(II) MOSFET I V CHARACTERISTICS(contd.) Outline 1. The saturation region 2. Backgate characteristics Reading Assignment: Howe and Sodini, Chapter 4, Section 4.4 6.012 Spring 2009 Lecture
More informationMOS Transistors. Prof. Krishna Saraswat. Department of Electrical Engineering Stanford University Stanford, CA
MOS Transistors Prof. Krishna Saraswat Department of Electrical Engineering S Stanford, CA 94305 saraswat@stanford.edu 1 1930: Patent on the Field-Effect Transistor! Julius Lilienfeld filed a patent describing
More informationGEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering
NAME: GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering ECE 4430 First Exam Closed Book and Notes Fall 2002 September 27, 2002 General Instructions: 1. Write on one side of
More informationEE 434 Lecture 13. Basic Semiconductor Processes Devices in Semiconductor Processes
EE 434 Lecture 3 Basic Semiconductor Processes Devices in Semiconductor Processes Quiz 9 The top view of a device fabricated in a bulk CMOS process is shown in the figure below a) Identify the device b)
More informationCHAPTER 5 MOS FIELD-EFFECT TRANSISTORS
CHAPTER 5 MOS FIELD-EFFECT TRANSISTORS 5.1 The MOS capacitor 5.2 The enhancement-type N-MOS transistor 5.3 I-V characteristics of enhancement mode MOSFETS 5.4 The PMOS transistor and CMOS technology 5.5
More informationLecture 12 Digital Circuits (II) MOS INVERTER CIRCUITS
Lecture 12 Digital Circuits (II) MOS INVERTER CIRCUITS Outline NMOS inverter with resistor pull-up The inverter NMOS inverter with current-source pull-up Complementary MOS (CMOS) inverter Static analysis
More informationLecture 13 - Digital Circuits (II) MOS Inverter Circuits. March 20, 2003
6.012 Microelectronic Devices and Circuits Spring 2003 Lecture 131 Lecture 13 Digital Circuits (II) MOS Inverter Circuits March 20, 2003 Contents: 1. NMOS inverter with resistor pullup (cont.) 2. NMOS
More informationCircuits. L2: MOS Models-2 (1 st Aug. 2013) B. Mazhari Dept. of EE, IIT Kanpur. B. Mazhari, IITK. G-Number
EE610: CMOS Analog Circuits L: MOS Models- (1 st Aug. 013) B. Mazhari Dept. of EE, IIT Kanpur 3 NMOS Models MOS MODEL Above Threshold Subthreshold ( GS > TN ) ( GS < TN ) Saturation ti Ti Triode ( DS >
More informationLecture 5: DC & Transient Response
Lecture 5: DC & Transient Response Outline q Pass Transistors q DC Response q Logic Levels and Noise Margins q Transient Response q RC Delay Models q Delay Estimation 2 Activity 1) If the width of a transistor
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 5: January 25, 2018 MOS Operating Regions, pt. 1 Lecture Outline! 3 Regions of operation for MOSFET " Subthreshold " Linear " Saturation!
More informationECE321 Electronics I
ECE31 Electronics Lecture 1: CMOS nverter: Noise Margin & Delay Model Payman Zarkesh-Ha Office: ECE Bldg. 30B Office hours: Tuesday :00-3:00PM or by appointment E-mail: payman@ece.unm.edu Slide: 1 CMOS
More information3. Basic building blocks. Analog Design for CMOS VLSI Systems Franco Maloberti
Inverter with active load It is the simplest gain stage. The dc gain is given by the slope of the transfer characteristics. Small signal analysis C = C gs + C gs,ov C 2 = C gd + C gd,ov + C 3 = C db +
More informationExam 2 Fall How does the total propagation delay (T HL +T LH ) for an inverter sized for equal
EE 434 Exam 2 Fall 2006 Name Instructions. Students may bring 2 pages of notes to this exam. There are 10 questions and 5 problems. The questions are worth 2 points each and the problems are all worth
More informationBiasing the CE Amplifier
Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC base-emitter voltage (note: normally plot vs. base current, so we must return to Ebers-Moll): I C I S e V BE V th I S e V th
More informationS No. Questions Bloom s Taxonomy Level UNIT-I
GROUP-A (SHORT ANSWER QUESTIONS) S No. Questions Bloom s UNIT-I 1 Define oxidation & Classify different types of oxidation Remember 1 2 Explain about Ion implantation Understand 1 3 Describe lithography
More information