à FIELD EFFECT TRANSISTORS

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1 Prof.M.G.Guvench à FIELD EFFECT TRANSISTORS ü FET: CONTENTS Principles of Operation Models: DC, S.S.A.C. and SPICE Applications: AC coupled S.S. Amplifiers ü FET: NAMES JFET Junction Field Effect Transistor (Silicon) MOSFET Metal - Oxide - Semiconductor FET (Silicon) MESFET Metal - Semiconductor FET (GaAs, III-V Semiconductor Alloys) HEMT High - Electron Mobility Transistor (GaAs, III-V Semiconductor Alloys) Univ. of Southern Maine 1 ELE342/343 Electronics 1999/2000

2 Prof. M. G. Guvench ü PRINCIPLES OF OPERATION AND CHARACTERISTICS of JFETs r= 1 ÄÄÄÄÄÄ s and s=enm n + epm p where r - Resistivity (Ohms) s - Conductivity (Siemens) e = 1.6 * Coulomb n electron density Hcm -3 L p hole density Hcm -3 L m mobility I ÄÄÄÄÄÄÄÄ cm2 V. S M Current For N - Type enm en D m n Current Density J =s Intrinsic Ohm' s Law I = G.V Ohms Law I D = J.dA = J.A area Electric Field =- dv ÄÄÄÄÄÄÄÄÄÄÄ dx H or, = - F in 3 - Dimensions L V DS =-.dx =.L or I D = J.A =s.a =s V DS ÄÄÄÄÄÄÄÄÄÄÄÄÄ L.A = G.V DS Univ. of Southern Maine 2 ELE342/343 Electronics 1999/2000

3 Prof.M.G.Guvench V DS = 1 ÄÄÄÄÄÄ G I D = R.I D Ohm' s Law where G = s A ÄÄÄÄÄÄÄ L or R = s -1 L ÄÄÄÄÄ A Note that, for the N - type slab resistor shown above, majority carriers, i.e. electrons, dominate the current, therefore, I HeN D m n L.A ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ L V DS How can I make I D be controlled by a variable other than V DS? Options: A, L and N D Which one of these can be controlled by a voltage or current? How? Answer: A, through depletion around a PN junction => JFET Obviously the smaller the cross sectional area the smaller the current flow becomes. Univ. of Southern Maine 3 ELE342/343 Electronics 1999/2000

4 Prof. M. G. Guvench ü JFET STRUCTURE and PRINCIPLE OF OPERATION JFETs have been invented using this idea that current can be cotrolled by varying the cross section of a resistor made from an N -type semiconductor. In JFETs the cross sectional area of a conducting channel is controlled by employing PN junctions. The facts that (1) a PN junction creates a space charge layer around it which is depleted of carriers, (2) the thickness of this layer increases with the reverse bias applied to it, and (3) if the junction is made "one-sided" by heavily doping one side of the junction (P+) this depletion layer extends predominantly into the lowly doped side, are used. When the two P+/N junctions in a P+/N/P+ sandwich structure are reverse biased their depletion layers take away thickness from the cross sectional area of the conducting N-type semiconductor channel in the middle, constricting electron flow and reducing (controlling/modulating) the current, I D. p + heavily doped so voltage throughout these regions will be same in everywhere. Total junction potential DV = V Bi - V where V = V GS I G > 0 since gate is reverse biased. Power Controlled : P D = I D.V DS Univ. of Southern Maine 4 ELE342/343 Electronics 1999/2000

5 Prof.M.G.Guvench Controlling Power : P G = I G.V GS > 0 ï Power Gain = P D ÄÄÄÄÄÄÄÄÄÄÄ > Infinite HpotentiallyL P G 1. What if V GS <-» V PO»? I D remains to be zero. G remains to be zero. R remains to be infinite. 2. What if V GS > 0, forward biasing? Do not forward bias it. It will diminish the power gain. Keep V GS < V to prevent turning on of the gate junction Hfor Silicon made JFETsL. 3. What if V GS < -Gate Breakdown Voltage? Univ. of Southern Maine 5 ELE342/343 Electronics 1999/2000

6 Prof. M. G. Guvench Breakdown! large currents flow with no control.the device stops working properly.possibly damaged by high current. ü JFET I-V CHARACTERISTICS HAssumption : Uniform channel dopingl en D m n I D = ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ Z H2 a - 2 dl V DS where the depletion layer thickness, L d = d HV Bi - V applied L = $%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%% 2 e H V Bi - V applied %%%%%%%% L ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ en V applied = HGate - to - ChannelL bias = i k j V GS at source side of the channel, V GS < 0 y z V GS - V DS at drain side of the channel, V GS < 0 { Therefore, HdL source side < HdL drain side HNonuniform Cross Sectional AreaL and HI D = constant, independent of positionl Univ. of Southern Maine 6 ELE342/343 Electronics 1999/2000

7 Prof.M.G.Guvench Therefore, current density increases from Source to Drain, making the horizontal gradient of channel potential, i.e., channel electric field nonuniform along the channel. Solutions to the mathematical problem is found in Streetman's or other textbooks (ELE 262) I D = Zm n e2 N 2 a 3 V DS ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ 9 ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ e L» V PO» - i j ÄÄÄÄÄ 2 k 3 A V DS + V GS + V Bi ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ E y z V PO { 3 ÄÄÄÄ 2 + ÄÄÄÄÄ 2 3 A V GS + V Bi ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ This nonlinear equation for I D is applicable to JFETs with uniform channel doping, only. It is nonlinear and too complicated to use in the analysis and design of JFET circuits. For nonuniformly doped JFETs (and for uniformly doped channel JFETs as well) a simpler square law empirical model (which is best fitted to measured I-V data) described by the equations below is used for hand calculations and in design. I D = i j k 0 Cut - off V GS <-» V PO» I DSS ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ H»VL PO» HV GS - V PO L V DS - V DS 2 D Linear I DSS A1 - V GS ÄÄÄÄÄÄÄÄ E 2 V PO Saturation Note that if the reverse potential across the depletion layer at the drain side becomes equal to a value, HV GS - V DS L =-» V PO», the drain end of the channel gets "pinched-off", the shape of the conducting channel becomes same as a bullet with a sharp tip. If VDS is increased beyond this point, the shape remains the same, resulting in the saturation of drain current. V PO E 3 ÄÄÄÄ 2 = Univ. of Southern Maine 7 ELE342/343 Electronics 1999/2000

8 Prof. M. G. Guvench The above I-V relationship applies to uniformly doped channel JFETs as well as nonuniformly doped channel JFETSs. Its modified forms are also used for other FETs, namely, MESFETs, HEMPTs and MOSFETs. Linear ñ HV GS - V DS L >-» V PO» Saturation ñ HV GS - V DS L <-» V PO» HDrain side of the channel is pinched offl Proof of I D HV GS L in saturation : At the transition point : V GS - V DS = V PO or, V DS = V GS - V PO Substitute this in I D HV GS,V DS L I D = I DSS ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ»V PO» HV GS - V PO L HV GS - V PO L - HV GS - V PO L 2 D I DSS I D = ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ ÄÄÄÄÄÄÄÄÄÄÄ» V PO» HV 2 GS - V PO L 2 Univ. of Southern Maine 8 ELE342/343 Electronics 1999/2000

9 Prof.M.G.Guvench 2 z I D = I i DSS j V GS ÄÄÄÄÄÄÄÄÄÄÄÄ - 1 y k V PO { 2 z = I i DSS j1 - V GS y ÄÄÄÄÄÄÄÄÄÄÄÄ k V PO { H In saturation L ü SYMBOLS ü MODELS As long as V GS reverse biases the gate junction with negligible leakage current the JFET can be represented with an open circuit at the Gate-Source and a dependent current source at the Drain-Source terminal as shown in Figure 10. where I G > 0 and Univ. of Southern Maine 9 ELE342/343 Electronics 1999/2000

10 Prof. M. G. Guvench I D = i j k 0 Cut - off V GS <-» V PO» I DSS ÄÄÄÄÄÄÄÄÄÄÄÄÄÄ»V PO» HV GS - V PO L V DS - V DS 2 D Linear V GS >-» V PO» and V DS < V GS - V PO I DSS A1 - V GS ÄÄÄÄÄÄÄÄ E 2 V PO Saturation V GS >-» V PO» and V DS > V GS - V PO ü SMALL SIGNAL AC : The small signal variations in drain and gate currents around an operating point of I DQ HV DSQ,V GSQ ) and I GQ > 0 are, Di D = i j i D y ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ z GS + k v GS { Q.Dv i j i D y ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ z k v DS { Q.Dv DS and Di G = 0 where, g m = i j i D y ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ z k v GS { Q g ds = i j i D y ÄÄÄÄÄÄÄÄÄÄÄÄÄÄ z k v DS { Q Drain Transconductance: Gate Voltage Æ Drain Current Drain Conductance : Drain Voltage Æ Drain Current This implies a simple small signal AC equivalent circuit shown in Figure 11. below. ü IN SATURATION: In most amplifier applications JFETs are operated in their saturation region. In saturation, i j i D y ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ z k v DS { Q = 0 î g ds = 0 and, Univ. of Southern Maine 10 ELE342/343 Electronics 1999/2000

11 Prof.M.G.Guvench i j i D y ÄÄÄÄÄÄÄÄÄÄÄÄÄÄ Ä z = i j ÄÄÄÄÄÄÄÄÄÄÄÄÄÄ Ä AI i DSS j1 - V GS ÄÄÄÄÄÄÄÄÄÄÄÄÄ k v GS { SAT k v GS k 2 z y V PO { E y z { Q î g m = i j 2I i DSS j- 1 y ÄÄÄÄÄÄÄÄÄÄÄÄÄ z i j1 - V GS y ÄÄÄÄÄÄÄÄÄÄÄÄ z y z k k V PO { k V PO { { g m = g mo i k j1 - V GSQ y ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ z { V PO Q Note that g m varies linearly with V GSQ. This property can be used to design amplifiers with electrically variable gains (voltage-controlled-amplification). ü A SIMPLE SSAC JFET AMPLIFIER : Univ. of Southern Maine 11 ELE342/343 Electronics 1999/2000

12 Prof. M. G. Guvench Dv out =-g m Dv GS.Hg ds -1 R D R L L Dv GS =Dv in = v gs Dv out = v out A V = Dv out ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ Dv in = -g m H g ds -1 R D R L L where g m is linearly dependent on V GSQ = V GG, as shown before. APPLICATION: Automatic Volume Control in AM / Short Wave Receivers, where loudspeaker voltage is rectified and used to push V GSQ toward V PO when the sound volume increases. Univ. of Southern Maine 12 ELE342/343 Electronics 1999/2000

13 Prof.M.G.Guvench ü IMPROVED JFET MODEL In a real JFET two major deviations from our previously developed model are found. 1. Breakdown V DG =» V DS» +» V GS» H V DS is positive, V GS is negativel» V DS» Breakdown =» V DG» Breakdown -» V GS»» V DS» Breakdown varies with» V GS» since» V DG» Breakdown is a constant junction breakdown voltage. 2. Channel Length Modulation l (Non-zero slope in saturation) I D = i j k 0 Cut - off V GS <-» V PO» I DSS ÄÄÄÄÄÄÄÄÄÄÄÄÄÄ»V PO» HV GS - V PO L V DS - V DS 2 D.H 1 + lv DS L Linear V GS >-» V PO» and V DS < V GS - V PO I DSS A1 - V GS ÄÄÄÄÄÄÄÄ E 2.H 1 + lv V DS L PO Saturation V GS >-» V PO» and V DS > V GS - V PO Univ. of Southern Maine 13 ELE342/343 Electronics 1999/2000

14 Prof. M. G. Guvench H I D L SATURATION : ü IMPROVED SMALL SIGNAL EQUIVALENT PARAMETERS IN SATURATION Univ. of Southern Maine 14 ELE342/343 Electronics 1999/2000

15 Prof.M.G.Guvench g m = i i D y j ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ k v GS { z VDS = V DSQ = constant g m = 2 I DSS i ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ ÄÄÄÄÄÄÄ j1 - V GSQ y ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ z.i 1 + lv DS M H-V PO L k { V PO g ds = i j i D y ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ z k v DS { Q I DSQ g ds = ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ ÄÄÄÄÄÄÄÄÄ IV DSQ +1 ë lm = l I DSS H1 - V GSQ ê V PO L 2 = l I DSQ ë 1 + l V DSQ Univ. of Southern Maine 15 ELE342/343 Electronics 1999/2000

16 Prof. M. G. Guvench ü TEMPERATURE EFFECTS 1. Thermally more stable than BJT : I DSS is proportinal to m which decreases as temperature increases. Therefore, I D can not run off at high temperatures. In BJTs, however, b H+1 % ê CL and I CEO Hdoubles every 7 CL increase with temperature, therefore, BJTs are vulnarable to thermal runaway of their operating point currents. 2. Pinch - Off Voltage decreases in magnitude when temperature increases. d» V PO» dt H 2mVto2.5 mv per 0 CL Univ. of Southern Maine 16 ELE342/343 Electronics 1999/2000

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