Effect of phonon confinement on the heat dissipation in ridges
|
|
- Claire Snow
- 6 years ago
- Views:
Transcription
1 Effect of phonon confinement on the heat dissipation in ridges P.-O. Chapuis 1*, A. Shchepetov 2*, M. Prunnila 2, L. Schneider 1, S. Lasko 2, J. Ahopelto 2, C.M. Sotomayor Torres 1,3 1 Institut Catala de Nanotecnologia (ICN), Centre d'investigacio en Nanociencia e Nanotecnologia (CIN2=ICN+CSIC), Bellaterra (Barcelona), Spain 2 VTT Microelectronics, Espoo, Finland 3 Institució Catalana de Recerca e Estudis Avaçats (ICREA), Barcelona, Spain *Contributed equally Eurotherm 91, Poitiers, August 2011
2 Outline Phonon transport confinement effects Measuring the temperature in ridge samples Thermal conductances of silicon ridges Conclusion/Perspectives
3 Phonon transport confinement effects Phonon lengthscales Acoustic phonons are the main heat carriers in nonmetals Thermal wavelengths Approximate mean free path by inversion of λ T 1 ( ) = ρc v Λ p s 3 [~0-20] Mean free path (MFP) [10 500] nm =f(ω) Modifying the temperature is a way to change the average MFP Kn=Λ avg /D 2
4 Phonon transport confinement effects Si Example in suspended structures D 30nm Bulk~150 D= 500μm Li,, Majumdar, Appl. Phys. Lett. 83, 2934 (2003) etc. 3
5 Phonon transport confinement effects Supported nanostructures? e d w Heater L e Cross section ~ 100 nm w ~ 100 nm-1 μm Heater = phonon generator d ~ 100 nm-1 μm Ridge Confinement (phonon constriction) Heat flux propagation? 1 μ Substrate Si SAMPLE 4
6 Outline Phonon transport confinement effects Measuring the temperature in ridge samples Thermal conductances of silicon ridges Conclusion/Perspectives
7 Fabrication of the sample Different ways of sample fabrication Implanted heater Highly resistive silicon Ion implantation ρ e (Si doped, 100 nm) = 10 4 Ωm ρ e (Si doped, 200 nm) = Ωm Doped silicon Highly resistive silicon 100 nm ICP etching Expitaxial heater Doped Si epitaxy Doped silicon Metal heater Highly resistive silicon Highly resistive silicon ρ e (Si, 100 nm) = Ωm Al 90 nm TiW 10 nm 800 nm Silicon Silicon Mask Maximum roughness: Period~50nm, height~10% 5
8 Fabrication of the sample Different ways of sample fabrication Implanted heater Highly resistive silicon Ion implantation ρ e (Si doped, 100 nm) = 10 4 Ωm ρ e (Si doped, 200 nm) = Ωm Doped silicon Highly resistive silicon 100 nm ICP etching Expitaxial heater Doped Si epitaxy Doped silicon Metal heater Highly resistive silicon Highly resistive silicon ρ e (Si, 100 nm) = Ωm Al 90 nm TiW 10 nm 800 nm Silicon Silicon Mask Maximum roughness: Period~50nm, height~10% 5
9 Measuring the ridge temperature Wire temperature measurement 3ω method, Cahill, RSI (1990) R(T) = R 0 (1 + α ΔT) Electrical resistance depends on temperature I = I ω cos(ωt) P(t) = R I(t) 2 = ½R 0 (1 + cos(2ωt)) Joule heating of the electric T(t) = T 0 + T DC + T 2ω cos(2ωt+φ 2ω ) wire U = RI = R 0 [1 + α(t DC + T 2ω cos(2ωt+φ 2ω ))] I ω cos(ωt) = R 0 I ω [(1+ αt DC )cos(ωt) + ½ αt 2ω cos(ωt-φ 2ω ) + ½ αt 2ω cos(3ωtt+φ 2ω ) ] = U 1ω + ½ αr 0 I ω T 2ω cos(3ωt+φ 2 ω ) Lock-in detection Other possibility: Combining DC and AC current input I = I 0 + I ω cos(ωt) U ω = R 0 I ω (1+ αt DC )cos(ωt) Wire temperature = f(heat flux to the sample) 6
10 Measuring the ridge temperature Calculation of the conductance G th The conductance is determined from G th = P/ΔT = F geometry RI 2 / ΔT F geometry? Pads are heat baths. T wire is not always constant along its length. Temperature distribution T Temperature profile wire FEM simulation I 0 = A g =10 8 WK -1 m -2 (f =12 Hz) Analytical calculation 7
11 Outline Phonon transport confinement effects Measuring the temperature in ridge samples Thermal conductances of silicon ridges Conclusion/Perspectives
12 Thermal conductances of Si ridges Measured thermal conductances e d Heater Epitaxial heater, Superimposed AC-DC w Cross section 450 nm 200 nm 100 nm 400 nm 1600 nm G appears to follow a w/d trend (Fourier?) 8
13 Thermal conductances of Si ridges Deviation to ballistic theory Ratio S(cavity)/ S(contact) 400 nm 450 nm nm 100 nm Thermal conductance normalized by theoretical Fourier s prediction Ballistic prediction w=d 1600 nm Temperature [K] Far from the Fourier prediction (<10%) Also different from a pure ballistic prediction (<50%) Impact of roughness on the violet curve 9
14 Thermal conductances of Si ridges Explanations of deviation to ballistic theory 1) Surface thermal resistance R th s - Until now not seen with 3ω - Si vs epitaxially-doped Si? 10
15 Thermal conductances of Si ridges Explanations of deviation to ballistic theory 2) Correction to theory of constrictions between macrobodies Standard ballistic theory simple particle approach Assumption : two heat baths All phonons are supposed to be transmitted through the constriction 11
16 Thermal conductances of Si ridges Explanations of deviation to ballistic theory 2) Correction to theory of constrictions between macrobodies Standard ballistic theory simple particle approach Assumption : two heat baths All phonons are supposed to be transmitted through the constriction Theory applied to a nanostructure ( Nano correction) Phonon backscattering? No thermalization in the nanostructure? R th = Ballistic Fourier deviation prediction(sharvin-like) R Fourier 1 ( 1+ βkn). C( W / BTE) 1 γ called Wexler s formula BTE correction to Wexler (heat source case) «Nano» correction to Wexler/BTE Related to the backscattering probability Volz, JAP (2008) 11
17 Conclusion/Perspectives The thermal conductance of silicon ridges has been measured for nm thick ridges Its temperature dependence (i.e. Knudsen number) was observed A two orders of magnitude decrease vs Fourier law was measured due to confinement As high as one order of magnitude difference with the ballistic prediction Relative contribution of the two effects : R th s and 1/(1-γ) Lower temperatures interplay with strong wave effect Higher temperatures larger range of Knudsen number Roughness consequences (violet curve)? 12
18 Conclusion/Perspectives Si D DIFFUSIVE D ~ MFP BALLISTIC D Particle Channels =modes Wave? Change of the relation dispersion Balandin, J. Super. Micro 26, 181 (1999) Refining the associated theory? Wave (freq.) dependence! 13
19 Thank you for your attention! Questions?
Resistance Thermometry based Picowatt-Resolution Heat-Flow Calorimeter
Resistance Thermometry based Picowatt-Resolution Heat-Flow Calorimeter S. Sadat 1, E. Meyhofer 1 and P. Reddy 1, 1 Department of Mechanical Engineering, University of Michigan, Ann Arbor, 48109 Department
More informationThermal characterization of Au-Si multilayer using 3- omega method
Thermal characterization of Au-Si multilayer using 3- omega method Sunmi Shin Materials Science and Engineering Program Abstract As thermal management becomes a serious issue in applications of thermoelectrics,
More informationElectro-Thermal Transport in Silicon and Carbon Nanotube Devices E. Pop, D. Mann, J. Rowlette, K. Goodson and H. Dai
Electro-Thermal Transport in Silicon and Carbon Nanotube Devices E. Pop, D. Mann, J. Rowlette, K. Goodson and H. Dai E. Pop, 1,2 D. Mann, 1 J. Rowlette, 2 K. Goodson 2 and H. Dai 1 Dept. of 1 Chemistry
More informationSupplementary Information Interfacial Engineering of Semiconductor Superconductor Junctions for High Performance Micro-Coolers
Supplementary Information Interfacial Engineering of Semiconductor Superconductor Junctions for High Performance Micro-Coolers D. Gunnarsson 1, J.S. Richardson-Bullock 2, M.J. Prest 2, H. Q. Nguyen 3,
More informationSimulation and Optimization of an In-plane Thermal Conductivity Measurement Structure for Silicon Nanostructures
32nd International Thermal Conductivity Conference 20th International Thermal Expansion Symposium April 27 May 1, 2014 Purdue University, West Lafayette, Indiana, USA Simulation and Optimization of an
More informationA Variational Approach to Extracting the Phonon Mean Free Path Distribution from the Spectral Boltzmann Transport Equation
A Variational Approach to Extracting the Phonon Mean Free Path Distribution from the Spectral Boltzmann Transport Equation Vazrik Chiloyan a, Lingping Zeng a, Samuel Huberman a, Alexei A. Maznev b, Keith
More informationThermal Transport in Graphene and other Two-Dimensional Systems. Li Shi. Department of Mechanical Engineering & Texas Materials Institute
Thermal Transport in Graphene and other Two-Dimensional Systems Li Shi Department of Mechanical Engineering & Texas Materials Institute Outline Thermal Transport Theories and Simulations of Graphene Raman
More informationComparison of the 3ω method and time-domain
Comparison of the 3ω method and time-domain thermoreflectance David G. Cahill, Shawn Putnam, Yee Kan Koh Materials Research Lab and Department of Materials Science and Engineering, U. of Illinois, Urbana,
More informationRecap (so far) Low-Dimensional & Boundary Effects
Recap (so far) Ohm s & Fourier s Laws Mobility & Thermal Conductivity Heat Capacity Wiedemann-Franz Relationship Size Effects and Breakdown of Classical Laws 1 Low-Dimensional & Boundary Effects Energy
More informationPrototype 16: 3-omega thermal characterization chip (Device C )
Prototype 16: 3-omega thermal characterization chip (Device C ) Lead Partners: Berliner Nanotest und Design GmbH, Germany and VTT-Technical research Centre of Finland This measurement system is suitable
More informationAdvanced Workshop on Energy Transport in Low-Dimensional Systems: Achievements and Mysteries October 2012
2371-2 Advanced Workshop on Energy Transport in Low-Dimensional Systems: Achievements and Mysteries 15-24 October 2012 Atomistic Simulations of Thermal Transport in Nanostructured Semiconductors (Thermal
More informationThermoelectric bolometers based on ultra-thin heavily doped single-crystal silicon membranes
Thermoelectric bolometers based on ultra-thin heavily doped single-crystal silicon membranes Andrey V. Timofeev a), Aapo Varpula a), Andrey Shchepetov, Kestutis Grigoras, Juha Hassel, Jouni Ahopelto, Markku
More informationThermal Management at Nanoscale: Problems and Opportunities
Thermal Management at Nanoscale: Problems and Opportunities Alexander A. Balandin Nano-Device Laboratory Department of Electrical Engineering and Materials Science and Engineering Program University of
More informationarrays for mid-infrared plasmonics
Scalable and tunable periodic graphene nano-hole arrays for mid-infrared plasmonics Kavitha K. Gopalan*, Bruno Paulillo*, David M.A. Mackenzie +, Daniel Rodrigo*, Nestor Bareza*, Patrick R. Whelan +, Abhay
More informationDisparate Quasiballistic Heat Conduction Regimes from Periodic Heat Sources on a Substrate
Disparate Quasiballistic Heat Conduction Regimes from Periodic Heat Sources on a Substrate Lingping Zeng 1 and Gang Chen 1,a) 1 Department of Mechanical Engineering, Massachusetts Institute of Technology,
More informationFinite Element Analysis of Transient Ballistic-Diffusive Heat Transfer in Two-Dimensional Structures
014 COMSOL Conference, Boston, MA October 7-9, 014 Finite Element Analysis of Transient Ballistic-Diffusive Heat Transfer in Two-Dimensional Structures Sina Hamian 1, Toru Yamada, Mohammad Faghri 3, and
More informationHeterogeneous vortex dynamics in high temperature superconductors
Heterogeneous vortex dynamics in high temperature superconductors Feng YANG Laboratoire des Solides Irradiés, Ecole Polytechnique, 91128 Palaiseau, France. June 18, 2009/PhD thesis defense Outline 1 Introduction
More informationThermal measurements using Scanning Thermal Microscopy (SThM) Micro and Nanoscale measurements
Lecture 2: Measurements with contact in heat transfer: principles, implementation and pitfalls PART 2 Thermal measurements using Scanning Thermal Microscopy (SThM) Micro and Nanoscale measurements Séverine
More informationR. MacKenzie, J.J. Lim, S. Bull, S. Sujecki and E.C. Larkins
The impact of thermal boundary resistance in opto-electronic devices R. MacKenzie1, J.J. Lim, S. Bull, S. Sujecki and E.C. Larkins School of Electrical and Electronic Engineering, University of Nottingham,
More informationMonte Carlo Study of Thermal Transport of Direction and Frequency Dependent Boundaries in High Kn Systems
Monte Carlo Study of Thermal Transport of Direction and Frequency Dependent Boundaries in High Kn Systems N.A. Roberts and D.G. Walker Department of Mechanical Engineering Vanderbilt University May 30,
More informationOlivier Bourgeois Institut Néel
Olivier Bourgeois Institut Néel Outline Introduction: necessary concepts: phonons in low dimension, characteristic length Part 1: Transport and heat storage via phonons Specific heat and kinetic equation
More informationSupplementary Material to Native-oxide limited cross-plane thermal transport in suspended silicon membranes revealed by scanning thermal microscopy
Supplementary Material to Native-oxide limited cross-plane thermal transport in suspended silicon membranes revealed by scanning thermal microscopy A.M. Massoud a,b, J.-M. Bluet a, V. Lacatena c,d, M.
More informationSupplementary Figures
Supplementary Figures Supplementary Figure S1. The effect of window size. The phonon MFP spectrum of intrinsic c-si (T=300 K) is shown for 7-point, 13-point, and 19-point windows. Increasing the window
More informationMeasurement of the thermal conductance of silicon nanowires at low temperature
Measurement of the thermal conductance of silicon nanowires at low temperature Olivier Bourgeois a), Thierry Fournier and Jacques Chaussy Centre de Recherches sur les Très Basses Températures, CNRS, laboratoire
More informationChapter 3 Engineering Science for Microsystems Design and Fabrication
Lectures on MEMS and MICROSYSTEMS DESIGN and MANUFACTURE Chapter 3 Engineering Science for Microsystems Design and Fabrication In this Chapter, we will present overviews of the principles of physical and
More informationReport on 7th US-Japan Joint Seminar on Nanoscale Transport Phenomena Science and Engineering
Report on 7th US-Japan Joint Seminar on Nanoscale Transport Phenomena Science and Engineering December 11-14, 2011, Shima, Japan co-chairs: Shigeo Maruyama, Kazuyoshi Fushinobu, Jennifer Lukes, Li Shi
More informationAnderson localization of photons and phonons for optomechanics Guillermo Arregui
Anderson localization of photons and phonons for optomechanics Catalan Institute of Nanoscience and Nanotechnology (ICN2), Bellaterra, Spain Dept. de Física, Universitat Autonoma de Barcelona, Bellaterra,
More informationSUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION I. Experimental Thermal Conductivity Data Extraction Mechanically exfoliated graphene flakes come in different shape and sizes. In order to measure thermal conductivity of the
More informationMagnon-drag thermopile
Magnon-drag thermopile I. DEVICE FABRICATION AND CHARACTERIZATION Our devices consist of a large number of pairs of permalloy (NiFe) wires (30 nm wide, 20 nm thick and 5 µm long) connected in a zigzag
More informationCONFINED ACOUSTIC PHONONS IN SILICON MEMBRANES. Clivia M Sotomayor Torres
CONFINED ACOUSTIC PHONONS IN SILICON MEMBRANES Clivia M Sotomayor Torres COLLABORATORS J Cuffe, E Chavez, P-O. Chapuis, F Alzina, N Kehagias, L Schneider, T Kehoe, C Ribéreau-Gayon, L Schneider A Shchepetov,
More informationK. Termentzidis 1, S. Merabia 2, and P. Chantrenne 1. Konstantinos TERMENTZIDIS
EUROTHERM SEMINAR 91 Microscale Heat Transfer III Poitiers France, August 2011 Kapitza resistance of rough superlattice interfaces, a molecular dynamics study K. Termentzidis 1, S. Merabia 2, and P. Chantrenne
More informationMODELING, DESIGN AND EXPERIMENTAL CARACHTERIZATION OF MICRO-ELECTRO ELECTRO-MECHANICAL- SYSTEMS FOR GAS- CHROMATOGRAPHIC APPLICATIONS
MODELING, DESIGN AND EXPERIMENTAL CARACHTERIZATION OF MICRO-ELECTRO ELECTRO-MECHANICAL- SYSTEMS FOR GAS- CHROMATOGRAPHIC APPLICATIONS ENRICO COZZANI DEIS DOCTORATE CYCLE XXIII 18/01/2011 Enrico Cozzani
More informationTemperature dependence of spin diffusion length in silicon by Hanle-type spin. precession
Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession T. Sasaki 1,a), T. Oikawa 1, T. Suzuki 2, M. Shiraishi 3, Y. Suzuki 3, and K. Noguchi 1 SQ Research Center, TDK
More informationThe Vacancy Effect on Thermal Interface Resistance between Aluminum and Silicon by Molecular Dynamics
The Vacancy Effect on Thermal Interface Resistance between Aluminum and Silicon by Molecular Dynamics Journal: 2014 MRS Fall Meeting Manuscript ID: 2035346.R1 Manuscript Type: Symposium NN Date Submitted
More informationClean Energy: Thermoelectrics and Photovoltaics. Akram Boukai Ph.D.
Clean Energy: Thermoelectrics and Photovoltaics Akram Boukai Ph.D. Solar Energy Use Hydrocarbons vs. Photons Arabian Oil: 600 years Sun: 1.5 billion years The Sun can Power both Solar Cells and Thermoelectrics
More informationSelf-study problems and questions Processing and Device Technology, FFF110/FYSD13
Self-study problems and questions Processing and Device Technology, FFF110/FYSD13 Version 2016_01 In addition to the problems discussed at the seminars and at the lectures, you can use this set of problems
More information2D Simulations and Electro-Thermal Analysis of Micro-Heater Designs Using COMSOL TM for Gas Sensor Applications
Presented at the COMSOL Conference 2010 India 2D Simulations and Electro-Thermal Analysis of Micro-Heater Designs Using COMSOL TM for Gas Sensor Applications Presented By Velmathi.G, Ramshanker.N and Mohan.S
More informationSupplementary Information for On-chip cooling by superlattice based thin-film thermoelectrics
Supplementary Information for On-chip cooling by superlattice based thin-film thermoelectrics Table S1 Comparison of cooling performance of various thermoelectric (TE) materials and device architectures
More informationThermal conductivity of symmetrically strained Si/Ge superlattices
Superlattices and Microstructures, Vol. 28, No. 3, 2000 doi:10.1006/spmi.2000.0900 Available online at http://www.idealibrary.com on Thermal conductivity of symmetrically strained Si/Ge superlattices THEODORIAN
More informationAC Electrothermal Characterization of Doped-Si Heated Microcantilevers Using Frequency-Domain Finite Element Analysis
AC Electrothermal Characterization of Doped-Si Heated Microcantilevers Using Frequency-Domain Finite Element Analysis K. Park 1, S. Hamian 1, A. M. Gauffreau 2, T. Walsh 2 1 University of Utah, Salt Lake
More informationEE-612: Lecture 22: CMOS Process Steps
EE-612: Lecture 22: CMOS Process Steps Mark Lundstrom Electrical and Computer Engineering Purdue University West Lafayette, IN USA Fall 2006 NCN www.nanohub.org Lundstrom EE-612 F06 1 outline 1) Unit Process
More informationSupplementary Figure 1 Characterization of the synthesized BP crystal (a) Optical microscopic image of bulk BP (scale bar: 100 μm).
Supplementary Figure 1 Characterization of the synthesized BP crystal (a) Optical microscopic image of bulk BP (scale bar: 100 μm). Inset shows as-grown bulk BP specimen (scale bar: 5 mm). (b) Unit cell
More informationLecture 11: Coupled Current Equations: and thermoelectric devices
ECE-656: Fall 011 Lecture 11: Coupled Current Euations: and thermoelectric devices Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA 9/15/11 1 basic
More informationQuantum transport in nanoscale solids
Quantum transport in nanoscale solids The Landauer approach Dietmar Weinmann Institut de Physique et Chimie des Matériaux de Strasbourg Strasbourg, ESC 2012 p. 1 Quantum effects in electron transport R.
More informationPhonons in Slow Motion: Dispersion Relations in Ultra- Thin Si Membranes
Phonons in Slow Motion: Dispersion Relations in Ultra- Thin Si Membranes John Cuffe a,b, Emigdio Chavez a,c, Andrey Shchepetov d, P-Olivier Chapuis a, El Houssaine El Boudouti e, f, Francesc Alzina a,
More informationThermal Resistance (measurements & simulations) In Electronic Devices
Thermal Resistance (measurements & simulations) In Electronic Devices A short online course PART 3 Eric Pop Electrical Engineering, Stanford University 1 Topics 1) Basics of Joule Heating 2) Heating in
More informationNanoscale Heat Transfer and Information Technology
Response to K.E. Goodson Nanoscale Heat Transfer and Information Technology Gang Chen Mechanical Engineering Department Massachusetts Institute of Technology Cambridge, MA 02139 Rohsenow Symposium on Future
More informationThermal and electronic analysis of GaInAs/AlInAs mid-ir
Thermal and electronic analysis of GaInAs/AlInAs mid-ir QCLs Gaetano Scamarcio Miriam S. Vitiello, Vincenzo Spagnolo, Antonia Lops oratory LIT 3, CNR - INFM Physics Dept.,University of Bari, Italy T. Gresch,
More informationTHERMAL CHARACTERIZATION OF MULTI-WALL CARBON NANOTUBE BUNDLES BASED ON PULSED LASER-ASSISTED THERMAL RELAXATION
Functional Materials Letters Vol. 1, No. 1 (2008) 71 76 c World Scientific Publishing Company THERMAL CHARACTERIZATION OF MULTI-WALL CARBON NANOTUBE BUNDLES BASED ON PULSED LASER-ASSISTED THERMAL RELAXATION
More informationSUPPLEMENTARY MATERIALS FOR PHONON TRANSMISSION COEFFICIENTS AT SOLID INTERFACES
148 A p p e n d i x D SUPPLEMENTARY MATERIALS FOR PHONON TRANSMISSION COEFFICIENTS AT SOLID INTERFACES D.1 Overview The supplementary information contains additional information on our computational approach
More informationTransient Harman Measurement of the Cross-plane ZT of InGaAs/InGaAlAs Superlattices with Embedded ErAs Nanoparticles
Transient Harman Measurement of the Cross-plane ZT of InGaAs/InGaAlAs Superlattices with Embedded ErAs Nanoparticles Rajeev Singh, Zhixi Bian, Gehong Zeng, Joshua Zide, James Christofferson, Hsu-Feng Chou,
More informationThermal Conductivity in Superlattices
006, November Thermal Conductivity in Superlattices S. Tamura Department of pplied Physics Hokkaido University Collaborators and references Principal Contributors: K. Imamura Y. Tanaka H. J. Maris B. Daly
More informationThermoelectricity: From Atoms to Systems
Thermoelectricity: From Atoms to Systems Week 3: Thermoelectric Characterization Lecture 3.6: Summary of Week 3 By Ali Shakouri Professor of Electrical and Computer Engineering Birck Nanotechnology Center
More informationProject Periodic Report
Project Periodic Report Publishable Summary Grant Agreement n. 256959 Project title Nanoscale energy management for powering ICT devices Project acronym NANOPOWER Call identifier FP7-ICT-2009-5 Funding
More informationNanoscale Heat Transfer at Contact Between a Hot Tip and a Substrate
Nanoscale Heat Transfer at Contact Between a Hot Tip and a Substrate Stéphane Lefèvre Laboratoire d Etude Thermiques, UMR CNRS 6608 Ecole Nationale Supérieure de Mécanique et d Aérotechnique, 86960 Futuroscope
More informationChapter 3 Properties of Nanostructures
Chapter 3 Properties of Nanostructures In Chapter 2, the reduction of the extent of a solid in one or more dimensions was shown to lead to a dramatic alteration of the overall behavior of the solids. Generally,
More informationLecture 150 Basic IC Processes (10/10/01) Page ECE Analog Integrated Circuits and Systems P.E. Allen
Lecture 150 Basic IC Processes (10/10/01) Page 1501 LECTURE 150 BASIC IC PROCESSES (READING: TextSec. 2.2) INTRODUCTION Objective The objective of this presentation is: 1.) Introduce the fabrication of
More informationSUPPLEMENTARY NOTES Supplementary Note 1: Fabrication of Scanning Thermal Microscopy Probes
SUPPLEMENTARY NOTES Supplementary Note 1: Fabrication of Scanning Thermal Microscopy Probes Fabrication of the scanning thermal microscopy (SThM) probes is summarized in Supplementary Fig. 1 and proceeds
More informationSemiclassical Phonon Transport in the Presence of Rough Boundaries
Semiclassical Phonon Transport in the Presence of Rough Boundaries Irena Knezevic University of Wisconsin - Madison DOE BES, Award No. DE-SC0008712 NSF ECCS, Award No. 1201311 Phonons in Nanostructures
More informationSolar Thermoelectric Energy Conversion
Solar Thermoelectric Energy Conversion Gang Chen Massachusetts Institute of Technology Cambridge, MA 02139 Email: gchen2@mit.edu http://web.mit.edu/nanoengineering NSF Nanoscale Science and Engineering
More informationLow Temperature Thermal Transport in Partially Perforated Silicon Nitride. Membranes
Low Temperature Thermal Transport in Partially Perforated Silicon Nitride Membranes V. Yefremenko, G. Wang, V. Novosad ( * ), A. Datesman, and J. Pearson Materials Science Division, Argonne National Laboratory,
More informationLow-dimensional electron transport properties in InAs/AlGaSb mesoscopic structures
Superlattices and Microstructures, Vol 21, No 1, 1997 Low-dimensional electron transport properties in InAs/AlGaSb mesoscopic structures M Inoue, T Sugihara, T Maemoto, S Sasa, H Dobashi, S Izumiya Department
More informationNano-Electro-Mechanical Systems (NEMS) in the Quantum Limit
Nano-Electro-Mechanical Systems (NEMS) in the Quantum Limit Eva Weig, now postdoc at University of California at Santa Barbara. Robert H. Blick, University of Wisconsin-Madison, Electrical & Computer Engineering,
More informationFundamentals of Nanoelectronics: Basic Concepts
Fundamentals of Nanoelectronics: Basic Concepts Sławomir Prucnal FWIM Page 1 Introduction Outline Electronics in nanoscale Transport Ohms law Optoelectronic properties of semiconductors Optics in nanoscale
More informationQuantised Thermal Conductance
B B Quantised Thermal Conductance In 1983 J Pendry published a paper on the quantum limits to the flow of information and entropy [Pendry'83]. In it he showed that there is an inequality that limits the
More informationT hermal transport in nanostructures has been a topic of intense interest in recent years1 3. When the characteristic
OPEN SUBJECT AREAS: CHARACTERIZATION AND ANALYTICAL TECHNIQUES NANOWIRES Length Dependent Thermal Conductivity Measurements Yield Phonon Mean Free Path Spectra in Nanostructures Hang Zhang, Chengyun Hua,
More informationSUPPLEMENTARY INFORMATION
Silicon Nanowires as ighly Efficient Thermoelectric Materials Supplementary Information (Experiment) Akram I. Boukai#, Yuri Bunimovich#, Jamil Tahir-Kheli, Jen-Kan Yu, William A. Goddard III, and James
More informationSupporting Information. by Hexagonal Boron Nitride
Supporting Information High Velocity Saturation in Graphene Encapsulated by Hexagonal Boron Nitride Megan A. Yamoah 1,2,, Wenmin Yang 1,3, Eric Pop 4,5,6, David Goldhaber-Gordon 1 * 1 Department of Physics,
More informationTopic 5.2 Heating Effect of Electric Currents
Topic 5.2 Heating Effect of Electric Currents Kari Eloranta 2017 Jyväskylän Lyseon lukio International Baccalaureate February 14, 2017 Topic 5.2 Heating Effect of Electric Currents In subtopic 5.2 we study
More informationSupplementary Information. Characterization of nanoscale temperature fields during electromigration of nanowires
Supplementary Information Characterization of nanoscale temperature fields during electromigration of nanowires Wonho Jeong,, Kyeongtae Kim,, *, Youngsang Kim,, Woochul Lee,, *, Pramod Reddy Department
More informationCarrier concentration effect and other structure-related parameters on lattice thermal conductivity of Si nanowires
Bull. Mater. Sci., Vol. 4, No. 3, June 217, pp. 599 67 DOI 1.17/s1234-17-1393-1 Indian Academy of Sciences Carrier concentration effect and other structure-related parameters on lattice thermal conductivity
More informationSupplementary Table 1. Parameters for estimating minimum thermal conductivity in MoS2
Supplementary Table 1. Parameters for estimating minimum thermal conductivity in MoS2 crystal. The three polarizations (TL1 TL2 and TA) are named following the isoenergydecomposition process described
More informationNanoscopic thermometry with 30 mk precision: a quantitative study of cathodoluminescence in lanthanide-doped nanomaterials
Nanoscopic thermometry with 30 mk precision: a quantitative study of cathodoluminescence in lanthanide-doped nanomaterials Clarice D. Aiello Inorganic Nanostructures Seminar @ Molecular Foundry, 03/16/17
More informationCorrelated 2D Electron Aspects of the Quantum Hall Effect
Correlated 2D Electron Aspects of the Quantum Hall Effect Magnetic field spectrum of the correlated 2D electron system: Electron interactions lead to a range of manifestations 10? = 4? = 2 Resistance (arb.
More informationCONFINED ACOUSTIC PHONONS IN SILICON
PHONON ENGINERING & CONFINED ACOUSTIC PHONONS IN SILICON MEMBRANES Clivia M Sotomayor Torres COLLABORATORS J Cuffe (UCC-IRCSET, IE), E Chavez (CONICYT, Chile), P-O. Chapuis, F Alzina, N Kehagias, L Schneider,
More informationMeasuring Thermal and Thermoelectric Properties of One-Dimensional Nanostructures Using a Microfabricated Device
Li Shi e-mail: lishi@mail.utexas.edu Center for Nano and Molecular Science and Technology, University of Texas at Austin, TX 78712 Deyu Li University of California, Berkeley, CA 94720 Choongho Yu Center
More informationLecture 18. New gas detectors Solid state trackers
Lecture 18 New gas detectors Solid state trackers Time projection Chamber Full 3-D track reconstruction x-y from wires and segmented cathode of MWPC z from drift time de/dx information (extra) Drift over
More informationHeat Capacity Measurements. Scott Hannahs NHMFL Summer School 2016
Heat Capacity Measurements Scott Hannahs NHMFL Summer School 2016 1 Why Heat Capacity Fundamental Quantity C = @ @T R Ef(E)g(E)dE Capacity to hold energy Equipartition in states Thermodynamic, bulk measurement
More informationHeat Conduction by Molecular Dynamics Technique
Heat Conduction by Molecular Dynamics Technique Sebastian Volz National Engineering School of Mechanics and Aerotechnics Laboratory of Thermal Studies UMR CNRS 668 Poitiers, France Denis Lemonnier - Lab.
More informationTerahertz acoustics with multilayers and superlattices Bernard Perrin Institut des NanoSciences de Paris
Terahertz acoustics with multilayers and superlattices Bernard Perrin Institut des NanoSciences de Paris Daniel Lanzillotti-Kimura CNEA Bariloche & INSP Paris Florencia Pascual-Winter CNEA Bariloche &
More informationPhonon Conduction in Silicon Nanobeam Labyrinths
www.nature.com/scientificreports Received: 3 March 207 Accepted: 3 June 207 Published online: 24 July 207 OPEN Phonon Conduction in Silicon Nanobeam Labyrinths Woosung Park, Giuseppe Romano 2, Ethan C.
More informationSpin electronics at the nanoscale. Michel Viret Service de Physique de l Etat Condensé CEA Saclay France
Spin electronics at the nanoscale Michel Viret Service de Physique de l Etat Condensé CEA Saclay France Principles of spin electronics: ferromagnetic metals spin accumulation Resistivity of homogeneous
More informationGold Nanoparticles Floating Gate MISFET for Non-Volatile Memory Applications
Gold Nanoparticles Floating Gate MISFET for Non-Volatile Memory Applications D. Tsoukalas, S. Kolliopoulou, P. Dimitrakis, P. Normand Institute of Microelectronics, NCSR Demokritos, Athens, Greece S. Paul,
More informationSegmented Power Generator Modules of Bi 2 Te 3 and ErAs:InGaAlAs Embedded with ErAs Nanoparticles
Mater. Res. Soc. Symp. Proc. Vol. 1044 2008 Materials Research Society 1044-U10-06 Segmented Power Generator Modules of Bi 2 Te 3 and ErAs:InGaAlAs Embedded with ErAs Nanoparticles Gehong Zeng 1, Je-Hyeong
More informationNew thermal mechanisms in sub-10nm structures
New thermal mechanisms in sub-10nm structures Sebastian Volz Laboratoire d Energétique Moléculaire et Macroscopique, Combustion CNRS - Ecole Centrale Paris - France Seminar at Mechanical Engineering Dpt,
More informationFUNDAMENTAL ISSUES IN NANOSCALE HEAT TRANSFER: FROM COHERENCE TO INTERFACIAL RESISTANCE IN HEAT CONDUCTION
HEFAT2014 10 th International Conference on Heat Transfer, Fluid Mechanics and Thermodynamics 14 16 July 2014 Orlando, Florida FUNDAMENTAL ISSUES IN NANOSCALE HEAT TRANSFER: FROM COHERENCE TO INTERFACIAL
More informationQuasi-periodic nanostructures grown by oblique angle deposition
JOURNAL OF APPLIED PHYSICS VOLUME 94, NUMBER 12 15 DECEMBER 2003 Quasi-periodic nanostructures grown by oblique angle deposition T. Karabacak, a) G.-C. Wang, and T.-M. Lu Department of Physics, Applied
More informationThermal Transport at the Nanoscale: A Fourier s Law vs. Phonon Boltzmann Equation Study
Thermal Transport at the Nanoscale: A Fourier s Law vs. Phonon Boltzmann Equation Study J. Kaiser, 1,a) T. Feng, 2 J. Maassen, 3 X. Wang, 4 X. Ruan, 2 and M. Lundstrom 4 1 Department of Electrical Engineering
More informationMidterm I - Solutions
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Spring 2008 Professor Chenming Hu Midterm I - Solutions Name: SID: Grad/Undergrad: Closed
More informationIII-V nanostructured materials synthesized by MBE droplet epitaxy
III-V nanostructured materials synthesized by MBE droplet epitaxy E.A. Anyebe 1, C. C. Yu 1, Q. Zhuang 1,*, B. Robinson 1, O Kolosov 1, V. Fal ko 1, R. Young 1, M Hayne 1, A. Sanchez 2, D. Hynes 2, and
More informationSupplementary Information. Directed flow of micromotors through alignment interactions with micropatterned ratchets
Supplementary Information Directed flow of micromotors through alignment interactions with micropatterned ratchets Jaideep Katuri 1,2, David Caballero 1,3,4, Raphael Voituriez 5,6, Josep Samitier 1,3,4,
More informationThe Pennsylvania State University. The Graduate School. Department of Mechanical and Nuclear Engineering MEASUREMENT OF ONE-DIMENSIONAL NANOSTRUCTURES
The Pennsylvania State University The Graduate School Department of Mechanical and Nuclear Engineering A MODIFIED 3! METHOD FOR THERMAL CONDUCTIVITY MEASUREMENT OF ONE-DIMENSIONAL NANOSTRUCTURES A Thesis
More informationMicro Chemical Vapor Deposition System: Design and Verification
Micro Chemical Vapor Deposition System: Design and Verification Q. Zhou and L. Lin Berkeley Sensor and Actuator Center, Department of Mechanical Engineering, University of California, Berkeley 2009 IEEE
More informationRayleigh surface waves propagating in (111) Si substrate decorated with Ni phononic nanostructure
Rayleigh surface waves propagating in (111) Si substrate decorated with Ni phononic nanostructure. Graczykowski 1, S. Mielcarek 1, A. Trzaskowska 1, P. Patoka 2, M. Giersig 2 1 Faculty of Physics, Adam
More informationViolation of Fourier s law and anomalous heat diffusion in silicon nanowires
Nano Today (2010) 5, 85 90 available at www.sciencedirect.com journal homepage: www.elsevier.com/locate/nanotoday RAPID COMMUNICATION Violation of Fourier s law and anomalous heat diffusion in silicon
More informationarxiv: v1 [cond-mat.mes-hall] 28 Nov 2015
Spectral energy analysis of locally resonant nanophononic metamaterials by molecular simulations Hossein Honarvar and Mahmoud I. Hussein Department of Aerospace Engineering Sciences, University of Colorado
More informationAtomistic Green s Function Method: Density of States and Multi-dimensionality
Atomistic Green s Function Method: Density of States and Multi-dimensionality Timothy S. Fisher Purdue University School of Mechanical Engineering, and Birck Nanotechnology Center tsfisher@purdue.edu Based
More informationMonte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes
Journal of ELECTRONIC MATERIALS, Vol. 43, No. 10, 2014 DOI: 10.1007/s11664-014-3324-x Ó 2014 The Minerals, Metals & Materials Society Monte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes
More informationMODELING OF JOULE HEATING AND THERMOELECTRIC TRANSPORT IN THIN FILM SILICON FOR SJEM MEASUREMENT YOUNGJOON KOH THESIS
MODELING OF JOULE HEATING AND THERMOELECTRIC TRANSPORT IN THIN FILM SILICON FOR SJEM MEASUREMENT BY YOUNGJOON KOH THESIS Submitted in partial fulfillment of the requirements for the degree of Master of
More informationNANOFABRICATION RESEARCH INTHE RESEARCH CENTRE IN NANOSCIENCE AND NANOTECHNOLOGY (CIN2)
NANOFABRICATION RESEARCH INTHE RESEARCH CENTRE IN NANOSCIENCE AND NANOTECHNOLOGY (CIN2) Prof. Dr. Clivia M. Sotomayor Torres Catalan Institute of Nanotechnology & ICREA CENTRE D INVESTIGACIÓ EN NANOCIÈNCIA
More information