DRF RELIABILITY DATA

Size: px
Start display at page:

Download "DRF RELIABILITY DATA"

Transcription

1 Y K-ambda 9--0

2 X alculated values of - omponent derating -~ ain components temperature rise list -~ lectrolytic capacitor lifetime -9 Vibration test -0 bnormal est -~ hermal shock test - est results are typical data evertheless the following results are considered to be actual capability data because all units have nearly the same characteristics K-ambda

3 alculated values for alculating ethod alculated based on part count reliability projection of J (-90) ndividual failure rates λ is given to each part and is calculated by the count of each part ormula = X 0 lequip lequip = X 0 () n i ( l pq ) i i= where lequip = otal quipment ailure ate ( ailure / 0 ours ) l = eneric ailure ate or he ith eneric art ( ailure / 0 ours ) i = Quantity of ith eneric art n = umber of ifferent eneric art ategories pq = eneric Quality actor for the ith eneric art ( pq = ) Values (, X) =,9 (ours) K-ambda -

4 omponent derating () alculating method (a) easuring onditions nput V, 0V mbient temperature 0 utput V, 0 (00%) ounting method tandard ounting (b) emiconductors ompared with maximum junction temperature and actual one which is calculated based on case temperature, power dissipation and thermal impedance (c), esistors, apacitors, etc mbient temperature, operating condition, power dissipation and so on are within derating criteria (d) alculating ethod of hermal mpedance j-c = j(max) - c c(max) j-a = j(max) - a c(max) j-l = j(max) - l c(max) c ase temperature at start point of derating ; in general a mbient temperature at start point of derating ; in general l ead temperature at start point of derating ; in general c(max) aximum collector(channel) dissipation (ch(max)) j(max) aximum junction(channel) temperature (ch(max)) ( j - c) ( ch - c) hermal impedance between junction(channel) and case j-a hermal impedance between junction and air j-l hermal impedance between junction and lead K-ambda -

5 () omponent erating ist ocation o Q 00 Q 00 Q Q Q0 00 Q0 00 Q0-00, X Q0-00, X 0-0(,Q) 0(,Q) Vin = V oad = 00% a = 0 j-c = /W jmax = 0, d = W, c = j = c + (( j-c) d) = 9 = 0% c = 9 j-c = /W jmax = 0, d = W, c =, j = c + (( j-c) d) = 9 = % c = 9 jmax = 0, d = 00W, j = c + (( j-c) d) = 9 = 9% jmax = 0, d = 00W, j = c + (( j-c) d) = 0 = % jmax = 0, j-c = 0 /W, c = 9, d(max) = 0W c = 99 j-c = 0 /W, c = 9, d(max) = 0W c = 99 d = 0W, c =, c = 9 j-c = /W c =, c = 9 j-c = 0 /W, c =, d(max) = W c = j-c = 0 /W c = d(max) = W c = j-c = /W j = c + (( j-c) d) = 9 = % jmax = 0, d = 0W, j = c + (( j-c) = 09% jmax =, d = 0W, j = c + (( j-c) = 9% jmax =, d = 0W, j = c + (( j-c) = % jmax = 0, d = W, j = c + (( j-c) = % jmax = 0, d = 0000W, j = c + (( j-c) = 9% jmax = 0, d = 0000W, j = c + (( j-c) = 9% d) = 9 d) = d) = 9 j-c = /W c = d) = 09 c = 0 j-c = 0 /W c = 9 c = 99 j-c = 0 /W c = 9 c = 99 d) = 99 d) = 99 K-ambda -

6 () omponent erating ist ocation o Vin = V jmax =, 0 d = W, c = j = c + (( j-c) d) = 990 = 9% jmax = 0, j-l = 0 /W, d = 00W, l =, j = l + (( j-l) d) = 00 = 9% jmax = 0, j-a = /W c = 9 d = 09W, c = j = a + (( j-a) d) = 0 = 9% c = 9 0 0(,Q) 0 0(,Q) 0 -Y--() 0 -Y--() 0 -Y--() /, X 0 9/, X 0 0J oad = 00% j-c = 9 /W jmax =, j-c = 0 /W d = 000W, c = 9, j = c + (( j-c) d) = 9 = % jmax =, j-c = 0 /W d = 0W, c = j = c + (( j-c) d) = 9 = 9% jmax =, j-c = 0 /W d = 000W, c = j = c + (( j-c) d) = 9 = % jmax = 0, j-a = /W, d = 00W, c = 9, j = c + (( j-c) d) = 0 = % jmax = 0, j-c = 0 /W, d = 00W, c = 9, j = c + (( j-c) d) = = % jmax = 0, j-c = 9 /W, d = 0W, c =, j = c + (( j-c) d) = 9 = 9% jmax = 0, j-c = 9 /W, d = 0W, c =, j = c + (( j-c) d) = = % jmax = 0, j-c = /W d = 0W, c = j = c + (( j-c) d) = 0 = 99% K-ambda a = 0 l = 9 c = 99 c = 9 c = 9 c = 99 c = 99 c = 9 c = 0 c = 9 -

7 () omponent erating ist ocation o Q 00 Q 00 Q Q Q0 00 Q0 00 Q0-00, X Q0-00, X 0-0(,Q) 0(,Q) Vin = 0V oad = 00% a = 0 j-c = /W jmax = 0, d = 09W, c = j = c + (( j-c) d) = = % c = j-c = /W jmax = 0, d = 09W, c =, j = c + (( j-c) d) = = % c = jmax = 0, j-c = 0 /W, d = 00W, c =, j = c + (( j-c) d) = 0 = 0% jmax = 0, j-c = 0 /W, d = 00W, c =, j = c + (( j-c) d) = = % jmax = 0, j-c = /W d(max) = 0W c = d = 0W, d(max) = 0W c = c =, c = j-c = /W c =, c = j-c = 0 /W, c =, d(max) = W c = 0 j-c = 0 /W c = 0 d(max) = W c = 00 j-c = /W c = c = j-c = 0 /W c = c = j-c = 0 /W c = c = j = c + (( j-c) d) = = % jmax = 0, d = 0W, j = c + (( j-c) = % jmax =, d = 0W, j = c + (( j-c) = % jmax =, d = 0W, j = c + (( j-c) = % jmax = 0, d = W, j = c + (( j-c) = 9% jmax = 0, d = 0000W, j = c + (( j-c) = % jmax = 0, d = 0000W, j = c + (( j-c) = % d) = d) = 0 d) = 009 d) = 9 d) = d) = K-ambda -

8 () omponent erating ist ocation o Vin = 0V jmax =, 0 d = 9W, c = j = c + (( j-c) d) = = 9% jmax = 0, j-l = 0 /W, d = 00W, l = 0, j = l + (( j-l) d) = 90 = % jmax = 0, j-a = /W c = d = 09W, c = j = a + (( j-a) d) = 000 = 9% c = 0 0(,Q) 0 0(,Q) 0 -Y--() 0 -Y--() 0 -Y--() /, X 0 9/, X 0 0J oad = 00% j-c = 9 /W a = 0 l = 90 j-c = jmax =, j-c = 0 /W 0 / d = 000W, c =, c = j = c + (( j-c) d) = = % j-c = jmax =, j-c = 0 /W 0 / d = 0W, c = c = j = c + (( j-c) d) = = % jmax =, j-c = 0 /W j-c = d = 000W, c = c = j = c + (( j-c) d) = = % jmax = 0, j-a = /W, d = 00W, c =, c = j = c + (( j-c) d) = 9 = % jmax = 0, j-c = 0 /W, d = 00W, c =, c = j = c + (( j-c) d) = 99 = % jmax = 0, j-c = 9 /W, d = 0W, c = 9, c = 9 j = c + (( j-c) d) = 0 = % jmax = 0, j-c = 9 /W, d = 0W, c =, c = 9 j = c + (( j-c) d) = 9 = % jmax = 0, j-c = /W d = 0W, c = 0 c = 90 j = c + (( j-c) d) = 00 = 99% K-ambda -

9 ain components temperature rise list ondition tandard ounting ethod nput Voltage (V) utput Voltage (V) utput urrent () 0 emperature rise ( ) utput erating ocation o 0 Q Q Q0 Q0 Q0 Q arts ame K o = 00% o = % (a = 0 ) (a = 0 ) tandard ounting K-ambda -

10 ain components temperature rise list ondition tandard ounting ethod nput Voltage (V) 0 utput Voltage (V) utput urrent () 0 emperature rise ( ) utput erating o = 00% o = % (a = 0 ) (a = 0 ) ocation o arts ame tandard ounting 9 9 K 9 0 Q Q Q0 Q0 Q0 Q K-ambda -

11 lectrolytic capacitor lifetime a = 0 = 0 tandard ounting = 0 Vin = V ife ime (years) a = a = a = ife imes (years) oad (%) 0 Vin = 0V 0 utput urrent (%) 0 utput urrent (%) 00 0 oad (%) a = a = a = ife imes (years) ife ime (years) 0 K-ambda 00-9

12 Vibration est () Vibration est lass requency Variable ndurance est () quipment sed ontroller Vibrator ccelerometer aser () V-0 (ing ynamics) (ytran) () he umber f (evice nder est) nit () est onditions weep requency weep ime cceleration ounting 0 - z minute tandard ounting irection est ime on-operation X, Y, Z hour each axis () est ethod ix the on the mounting rail with stopper on each corner tandard mounting position as per picture above () est results - K K-ambda -0

13 bnormal test () est ondition and ircuit nput Voltage 0Vac utput V, 0 a, 0% () est esults (a amaged) o est osition Q Q Q0 Q0 Q est ode est esults K W 9 0 V a Q,Z, iccup a Q in increase in increase a Q,Z, iccup a Q in increase in increase a Q0,Q0,0, a Q0, a,q0,q0 a Q0,Q0,0, a Q0, a,q0,q0 Q,Q Vgs decrease K-ambda a Q,Q, ower actor decrease ower actor decrease ower actor decrease -

14 o est osition Q Q0 Q est ode K -K -K -K -K -K -K -K -K -K - - est esults K W V 9 0 Q,Q Vgs decrease iccup ower actor decrease a Q a Q a Q in increase in increase in increase in increase a ower actor ecrease a ower actor ecrease a Q a Q V ncrease K-ambda -

15 o est osition est ode est esults K W V 9 0 on/off cant operate aq,q aq,q ower actor ecrease Vbulk ncrease a aq,q aq in increase aq aq in increase ower actor ecrease iccup aq0,q0, K-ambda -

16 o est osition est ode est esults K W V 9 0 iccup Vo decrease Vds increase a,q0,q0 a,q0,q0 Vo hiccup in ncrease in ncrease in ncrease in ncrease in ncrease in ncrease in ncrease in ncrease in ncrease K-ambda -

17 o est osition est ode est esults K W V 9 0 in ncrease a0,09 iccup K-ambda -

18 hermal shock test () quipment used hermal shock chamber ( ) () he number of (ower upply nder est) unit () est onditions mbient temperature -0 est time 0min each temp est cycle 00 cycles perating o operating + cycle + 0mins -0 () est ethod 0mins efore the test, check if there is no abnormal output and put the in the testing chamber hen test it in above cycles fter the test is completed, leave it for hour at the room temperature and check to make sure that there is no abnormal output () est esults K K-ambda -

LS35 RELIABILITY DATA

LS35 RELIABILITY DATA L35 LIABILIY DAA DWG. o A581-57-01 AD CHK DWG DK-Lambda L35 I D X AG 1. Calculated Values of MBF - 1 2. Component Derating..... - 2 3. Main Components emperature ise Δ List - 5 4. lectrolytic Capacitor

More information

GWS500 RELIABLITY DATA

GWS500 RELIABLITY DATA RLIABLIY DAA DWG. o. PA590-57-01 APPD CHK DWG DK-Lambda IDX GWS500 PAG 1. Calculated values of MBF... R-1 2. Component derating... R-2~6 3. Main components temperature rise list. R-7~8 4. lectrolytic capacitor

More information

CUS100ME RELIABILITY DATA

CUS100ME RELIABILITY DATA RELIABILITY DATA DWG. No. APPD CHK DWG I N D E X 1. Calculated Values for MTBF... R-1 2. Components Derating List... R-2 3. Main components temperature rise ΔT list... R-4 4. Electrolytic capacitor lifetime...

More information

DRL10-1 RELIABILITY DATA

DRL10-1 RELIABILITY DATA RELIABILITY DATA TDK-Lambda CA816-57-01 INDEX PAGE 1. Calculated Values of MTBF R-1 2. Component Derating R-2 6 3. Main Components Temperature Rise T List R-7 8 4. Electrolytic Capacitor Lifetime R-9 10

More information

Top View Bottom View Internal Schematic (Top View)

Top View Bottom View Internal Schematic (Top View) W P M3415FY4Q P-H HM M MF Product ummary B) -16 ) max 39mΩ @ = -4.5 52mΩ @ = -2.5 65mΩ @ = -1.8 escription and pplications max = +25-2.5-2.1-1.8 his MF is designed to minimize the on-state resistance ))

More information

Bore size: 4, 6, 8, 10. Double acting. Double acting Compressed air Withstanding pressure Ambient temperature Port size

Bore size: 4, 6, 8, 10. Double acting. Double acting Compressed air Withstanding pressure Ambient temperature Port size *2 2 2 G 2 V2 /V2 V 2 * * U U G U2 2 U 2 G pecifications troke length ore size ylinder switch specifications escriptions pplications utput method ower voltage oad voltage oad current urrent consumption

More information

Cal-Chip Electronics, Incorporated TC Series Tantalum Solid Electrolytic Capacitors - Resin Molded Chip Type, Standard Type

Cal-Chip Electronics, Incorporated TC Series Tantalum Solid Electrolytic Capacitors - Resin Molded Chip Type, Standard Type : The T Series is designed for hybrid circuit and low profile printed circuit board applications where inductance is to be minimized, or where substrate space is at a premium. They can be attached to substrates

More information

KHB9D5N20P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description

KHB9D5N20P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description SIUTR TI T 952P1/1/2 S I T TRSISTR eneral escription 952P1 This planar stripe ST has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

More information

I D max T A = +25 C (Note 6)

I D max T A = +25 C (Note 6) YM M27MQ 2 MPMY PI HM M MF Product ummary evice B ) max I max = +25 ote 6) Q1 2 Ω @ = 4.5 1.34.5Ω @ = 2.5 1.65 Q2-2.7Ω @ = -4.5-1.14.9Ω @ = -2.5 -.94 escription and pplications his MF has been designed

More information

KHB2D0N60P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description

KHB2D0N60P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description SIUTR TI T 26P//2 S I T TRSISTR eneral escription 26P This planar stripe ST has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

More information

VDSS RDS(on) max (m -12V Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Symbol Parameter Typ. Max.

VDSS RDS(on) max (m -12V Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Symbol Parameter Typ. Max. D- 909A IRF7329 HXF ower MOSF l rench echnology l Ultra Low On-Resistance l Dual -hannel MOSF l Low rofile (

More information

Karad-Dhebewadi Road Karad INDIA

Karad-Dhebewadi Road Karad INDIA MRR MDL K372LG-BXXX BLL MRL B230, B231, B130 Karad-Dhebewadi Road Karad - 415 110 D ote ales compressor drawing number and compressor model name are the same. 25-1206- 1 0591urrent Last Model ame K372LG-BXXX

More information

3R3K SPECIFICATION FOR APPROVAL. Wound Chip Inductor. Ⅰ. Configuration and dimensions: Ⅲ. General specification: REF. : WL (Series) PROD.

3R3K SPECIFICATION FOR APPROVAL. Wound Chip Inductor. Ⅰ. Configuration and dimensions: Ⅲ. General specification: REF. : WL (Series) PROD. SPEIFIIO FOR PPROVL Ⅰ. onfiguration and dimensions: ME REV. 201715-L PE 1/8 Marking Inductance code H F F E I I ( P Pattern ) 4. ±0.3 3.20 ±0.2 3.20 ±0.2 4.20 ±0.2 E 1.20 F +0.3-0.0 2.20 H 1.60 Unit:m/m

More information

STS3401. P -C hannel E nhancement Mode MOS FE T. ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) THE R MAL C HAR AC TE R IS TIC S

STS3401. P -C hannel E nhancement Mode MOS FE T. ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) THE R MAL C HAR AC TE R IS TIC S T341 P - hannel E nhancement Mode MO FE T P R ODU T UMMR Y V D ID -3V -3 F E T UR E ( m W ) Max R D (ON) 7 @ V = -1V 1 @ V = -4.V uper high dee cell design for low R D (ON ). R ugged and reliable. OT-23

More information

STM8309. Dual Enhancement Mode Field Effect Transistor ( N and P Channel) ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)

STM8309. Dual Enhancement Mode Field Effect Transistor ( N and P Channel) ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) SamHop Microelectronics Corp. STM39 Green Product Oct.3, 26 Dual Enhancement Mode Field Effect Traistor ( N and P Channel) PRODUCT SUMMRY (N-Channel) PRODUCT SUMMRY (P-Channel) VDSS ID RDS(ON) ( mω ) Max

More information

Lecture 21. Resonance and power in AC circuits. Physics 212 Lecture 21, Slide 1

Lecture 21. Resonance and power in AC circuits. Physics 212 Lecture 21, Slide 1 Physics 1 ecture 1 esonance and power in A circuits Physics 1 ecture 1, Slide 1 I max X X = w I max X w e max I max X X = 1/w I max I max I max X e max = I max Z I max I max (X -X ) f X -X Physics 1 ecture

More information

Mark 55, SPA55 & PA55 Series

Mark 55, SPA55 & PA55 Series single solenoid open center single solenoid pilot closed center pilot 5 orted, 2 and 3 position, 4-way, Spool & Sleeve v: 5.5 Direct solenoid, solenoid pilot, or air pilot actuated lug-in solenoid with

More information

Size Inch (mm) 0603 (1608) / (2012) 2.00± ± ± ± (3216) 3.20± ±0.

Size Inch (mm) 0603 (1608) / (2012) 2.00± ± ± ± (3216) 3.20± ±0. 02M557-09_Rev B - age 1 of 9 roduct Family: art umber Series: Multilayer eramic apacitors General urpose GL Middle/High Voltage Series onstruction: 0, X7R, Y5V dielectric material Wrap around electrodes

More information

SMPS MOSFET. V DSS R DS(on) typ. I D A I DM. 27 P C = 25 C Power Dissipation 45 Linear Derating Factor. V/ns T J

SMPS MOSFET. V DSS R DS(on) typ. I D A I DM. 27 P C = 25 C Power Dissipation 45 Linear Derating Factor. V/ns T J M MOFE D - 4444 Applications l witch Mode ower upply M) l ninterruptible ower upply l igh peed ower witching EXFE ower MOFE V D R Don) typ. I D 500V 20mΩ.A Benefits l Low ate Charge Qg results in imple

More information

Emerson Climate Technologies (India) Private Limited Karad Dhebewadi Road Karad INDIA

Emerson Climate Technologies (India) Private Limited Karad Dhebewadi Road Karad INDIA merson limate echnologies (ndia) rivate Limited MRR MDL merson limate echnologies (ndia) rivate Limited Karad Dhebewadi Road Karad - 415 110 D ote: ales compressor drawing number and compressor model name

More information

N-C hannel E nhancement Mode Field E ffect Transistor. T O-251(l-P AK ) (T A=25 C unles s otherwis e noted) 25 C 70 C IDM P D.

N-C hannel E nhancement Mode Field E ffect Transistor. T O-251(l-P AK ) (T A=25 C unles s otherwis e noted) 25 C 70 C IDM P D. amhop Microelectronics C orp. T U/1955NL N-C hannel E nhancement Mode Field E ffect Transistor rp,12 25 ver1.2 P R OUC T UMMR Y V I R (ON) ( m Ω ) Max 55V 55 @ V G = V 8 @ VG = 4.5V F E T UR E uper high

More information

First Order RC and RL Transient Circuits

First Order RC and RL Transient Circuits First Order R and RL Transient ircuits Objectives To introduce the transients phenomena. To analyze step and natural responses of first order R circuits. To analyze step and natural responses of first

More information

LOW NOISE, JFET INPUT OPERATIONAL AMPLIFIERS

LOW NOISE, JFET INPUT OPERATIONAL AMPLIFIERS These low noise T input operational amplifiers combine two state of the art analog technologies on a single monolithic integrated circuit. ach internally compensated operational amplifier has well matched

More information

KF80N08P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description TO-220IS (1)

KF80N08P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description TO-220IS (1) SINUTR TNI T N NN S I T TRNSISTR eneral escription 80N08P It s mainly suitable for low voltage applications such as automotive, / converters and a load switch in battery powered applications TURS V SS

More information

OPERATIONAL AMPLIFIER

OPERATIONAL AMPLIFIER The 74 was designed for use as a summing amplifier, integrator, or amplifier with operating characteristics as a function of the external feedback components. o requency ompensation Required hort ircuit

More information

CE-R14 SERIES 1. PRODUCT APPEARANCE 2. OUTLINE DRAWING SPECIFICATION. Part Number Chip Material Color of Emission Lens Type Viewing Angle

CE-R14 SERIES 1. PRODUCT APPEARANCE 2. OUTLINE DRAWING SPECIFICATION. Part Number Chip Material Color of Emission Lens Type Viewing Angle 1 SPECIFICATION CE-R14 SERIES 1. PRODUCT APPEARANCE 2. OUTLINE DRAWING Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ± 0.25mm (0.01 ) unless otherwised noted. 3. Specifi cations

More information

istributed by: www.jameco.com 1-00-31-22 The content and copyrights of the attached material are the property of its owner. Surface Mount Type K Series: Type : ountry of Origin K High temperature Lead-ree

More information

ATC 800 C Series NPO Ceramic High RF Power Multilayer Capacitors

ATC 800 C Series NPO Ceramic High RF Power Multilayer Capacitors A 800 Series NPO eramic High RF Power Multilayer apacitors ase Size apacitance Range: (.250 x.250 ) 2.2 pf to 3000 pf High Q Ultra-Stable Performance ow ESR/ES High RF urrent/voltage High RF Power High

More information

ALTERNATING CURRENT

ALTERNATING CURRENT ATENATING UENT Important oints:. The alternating current (A) is generally expressed as ( ) I I sin ω t + φ Where i peak value of alternating current.. emf of an alternating current source is generally

More information

Solid Tantalum Chip Capacitors TANTAMOUNT, Commercial, Surface Mount

Solid Tantalum Chip Capacitors TANTAMOUNT, Commercial, Surface Mount Solid Tantalum hip apacitors TNTMOUNT, ommercial, Surface Mount Model 293 RFORMN/LTRIL HRTRISTIS Operating Temperature: - 55 to + 5. (to + 125 with voltage derating.) apacitance Range: 0.µF to 0µF. apacitance

More information

Applications. Size. Alternative model 6SL33M. Applicable model 10SL33M 6SL47M 10SL47M 16SH1M 16SH10M 6SVP15M 10SVP15M 4SVP22M 6SVP22M 10SVP22M

Applications. Size. Alternative model 6SL33M. Applicable model 10SL33M 6SL47M 10SL47M 16SH1M 16SH10M 6SVP15M 10SVP15M 4SVP22M 6SVP22M 10SVP22M OS-ON is an aluminum solid capacitor with high conductive polymer or organic semiconductor electrolyte material. OS-ON acquires low quivalent Resistance (SR), excellent noise reduction capability and frequency

More information

Specifications J series Part Number Rated urrent Resistivity Working J03 (0201 Type) J05 (0402 Type) 0.5(70 ) 1(70 ) How to alculate Rated Voltage Pow

Specifications J series Part Number Rated urrent Resistivity Working J03 (0201 Type) J05 (0402 Type) 0.5(70 ) 1(70 ) How to alculate Rated Voltage Pow Structure and material imensions c d Specifications L c d W T Features Low Noise Nickel arrier Terminations pplication General Purpose ode Structure Material oating Glass or Resin Resistor Type(I Size)

More information

PRECISION OPERATIONAL AMPLIFIERS

PRECISION OPERATIONAL AMPLIFIERS The is a precision, low drift operational amplifier providing the best features of existing T and ipolar op amps. Implementation of super gain transistors allows reduction of input bias currents by an

More information

A01 REVISIONS DWG-CONV, DC-DC, 24VI, 5.1VO RELEASE RLS 7/18/01. Supplier Change Restrictions

A01 REVISIONS DWG-CONV, DC-DC, 24VI, 5.1VO RELEASE RLS 7/18/01. Supplier Change Restrictions REVISIONS WG REV EN NO ESRIPTION PP 0 9398 RELESE RLS 7/8/0 Supplier hange Restrictions FTER NOTIFITION PPROVL Y INTRONIS, IN. THE SUPPLIER S PRT, THE SUPPLIER SHLL NOTIFY INTRONIS OMPONENT ENGINEERING

More information

DMN2400UFB4. Features. Mechanical Data. Ordering Information (Note 4) 20V N-CHANNEL ENHANCEMENT MODE MOSFET DMN2400UFB4

DMN2400UFB4. Features. Mechanical Data. Ordering Information (Note 4) 20V N-CHANNEL ENHANCEMENT MODE MOSFET DMN2400UFB4 2V N-HNNL NHMN MO MOF Features Mechanical ata Low On-esistance Low ate hreshold Voltage Low nput apacitance Fast witching peed Low nput/output Leakage ltra-mall urface Mount Package ltra-low Package Profile,.4mm

More information

TE-R23 SERiES. SPECiFiCATiON 1. PRODUCT APPEARANCE 2. OUTLINE DRAWING. Part Number Chip Material Color of Emission lens Type Viewing Angle

TE-R23 SERiES. SPECiFiCATiON 1. PRODUCT APPEARANCE 2. OUTLINE DRAWING. Part Number Chip Material Color of Emission lens Type Viewing Angle 1 SPECiFiCATiON TE-R23 SERiES 1. PRODUCT APPEARANCE 2. OUTLINE DRAWING LED+ LED- Notes: Unit:mm 1. All dimensions are in millimeters (inches). 2. Tolerance Tolerance:±0.25 is ± 0.25mm (0.01 ) unless otherwised

More information

-6.0A -5.2A TSOT26 1. Top View Pin-Out. Part Number Case Packaging DMP2035UVT-7 TSOT26 3,000/Tape & Reel DMP2035UVT-13 TSOT26 10,000/Tape & Reel

-6.0A -5.2A TSOT26 1. Top View Pin-Out. Part Number Case Packaging DMP2035UVT-7 TSOT26 3,000/Tape & Reel DMP2035UVT-13 TSOT26 10,000/Tape & Reel YM -2V P-HL HM MO MOSF Product Summary Features and Benefits BV SS -2V S(O) Max 35mΩ @ V S = -4.5V 45mΩ @ V S = -2.5V I = +25-6. -5.2 Low Input apacitance Low On-esistance Fast Switching Speed S Protected

More information

Thick Film Chip Resistors (CR, CJ Series)

Thick Film Chip Resistors (CR, CJ Series) Thick Film hip Resistors (R, J Series) Structure and material D E Features Low Noise Nickel arrier Terminations pplication General Purpose ode Structure Material oating Glass or Epoxy Resistor RuO2 Resistor

More information

Amplifiers JFET INPUT OPERATIONAL AMPLIFIERS

Amplifiers JFET INPUT OPERATIONAL AMPLIFIERS These low cost T input operational amplifiers combine two state of the art linear technologies on a single monolithic integrated circuit. ach internally compensated operational amplifier has well matched

More information

AN019. A Better Approach of Dealing with Ripple Noise of LDO. Introduction. The influence of inductor effect over LDO

AN019. A Better Approach of Dealing with Ripple Noise of LDO. Introduction. The influence of inductor effect over LDO Better pproach of Dealing with ipple Noise of Introduction It has been a trend that cellular phones, audio systems, cordless phones and portable appliances have a requirement for low noise power supplies.

More information

Emerson Climate Technologies (India) Limited Karad Dhebewadi Road Karad INDIA

Emerson Climate Technologies (India) Limited Karad Dhebewadi Road Karad INDIA merson limate echnologies (ndia) Limited MRR MDL R53KQM-D-XXX (@ 50 Hz) BLL MRL 101, 102, 103, 201, 202, 203 ote : ales compressor drawing number and compressor model name are the same. 1 01 urrent merson

More information

NOT RECOMMENDED FOR NEW DESIGN USE DMC2053UVT. Features -3.1A -2.0A. Pin Configuration

NOT RECOMMENDED FOR NEW DESIGN USE DMC2053UVT. Features -3.1A -2.0A. Pin Configuration YM O OMMDD FO W DSIG US DM253UV OMPLMY PI HM MOD MOSF Product Summary Device BV DSS DS(O) Q 2V Q2-2V Description = +25 35mΩ @ V GS = 4.5V 4.5 56mΩ @ V GS =.8V 3.5 74mΩ @ V GS = -4.5V 68mΩ @ V GS = -.8V

More information

Green. TO251 Bottom View. Part Number Case Packaging MBR2045CTI TO Pieces/Tube

Green. TO251 Bottom View. Part Number Case Packaging MBR2045CTI TO Pieces/Tube FMT Green 20 SHTTKY B TF Product Summary (Per Leg) escription This Schottky Barrier ectifier has been designed to meet requirements of onsumer grade pplications. pplications M () Polarity Protection iode

More information

Specifications. Stroke length. Small direct mounting cylinder MDC2 Series. Port size: M3 (For 4, 6, 8 mm bore) M5 (For 10 mm bore) Descriptions

Specifications. Stroke length. Small direct mounting cylinder MDC2 Series. Port size: M3 (For 4, 6, 8 mm bore) M5 (For 10 mm bore) Descriptions mall direct mounting cylinder 2 eries ort size: (or,, mm bore) (or mm bore) I symbol ingle acting spring return type ingle acting spring extend type ouble acting VI. pecifications escriptions ore size

More information

KF12N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description

KF12N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description SINUTR TNI T N60P/ N NN S I T TRNSISTR eneral escription N60P This planar stripe ST has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

More information

Physics 2112 Unit 20. Outline: Driven AC Circuits Phase of V and I Conceputally Mathematically With phasors

Physics 2112 Unit 20. Outline: Driven AC Circuits Phase of V and I Conceputally Mathematically With phasors Physics 2112 Unit 20 Outline: Driven A ircuits Phase of V and I onceputally Mathematically With phasors Electricity & Magnetism ecture 20, Slide 1 Your omments it just got real this stuff is confusing

More information

Your Comments. If the dialectic capacitor has less potential energy, why do we use dielectrics in capacitors??? Isn't the point to store energy?

Your Comments. If the dialectic capacitor has less potential energy, why do we use dielectrics in capacitors??? Isn't the point to store energy? Your omments I thin this was easier than normal. I felt really good about the capacitance characteristics, although not quite as much about charge and other factors. The most confusing part was the different

More information

Physics 212. Lecture 8. Today's Concept: Capacitors. Capacitors in a circuits, Dielectrics, Energy in capacitors. Physics 212 Lecture 8, Slide 1

Physics 212. Lecture 8. Today's Concept: Capacitors. Capacitors in a circuits, Dielectrics, Energy in capacitors. Physics 212 Lecture 8, Slide 1 Physics 212 Lecture 8 Today's oncept: apacitors apacitors in a circuits, Dielectrics, Energy in capacitors Physics 212 Lecture 8, Slide 1 Simple apacitor ircuit Q +Q -Q Q= Q Battery has moved charge Q

More information

Excellent Integrated System Limited

Excellent Integrated System Limited Distributor of omchip Technology: Excellent Integrated System Limited Datasheet of DSQR400-HF - DIDE GEN PURP 80 M 0402 ontact us: sales@integrated-circuit.com Website: www.integrated-circuit.com Excellent

More information

Module 4. Single-phase AC circuits. Version 2 EE IIT, Kharagpur

Module 4. Single-phase AC circuits. Version 2 EE IIT, Kharagpur Module 4 Single-phase circuits ersion EE T, Kharagpur esson 6 Solution of urrent in Parallel and Seriesparallel ircuits ersion EE T, Kharagpur n the last lesson, the following points were described:. How

More information

MC33076P2 DUAL HIGH OUTPUT CURRENT OPERATIONAL AMPLIFIER

MC33076P2 DUAL HIGH OUTPUT CURRENT OPERATIONAL AMPLIFIER The 33076 operational amplifier employs bipolar technology with innovative high performance concepts for audio and industrial applications. This device uses high frequency PP input transistors to improve

More information

ELECTRICAL STRESS DE-RATING ANALYSIS INTRODUCTION

ELECTRICAL STRESS DE-RATING ANALYSIS INTRODUCTION ELECTRICAL TRE E-RATING ANALYI INTRUCTIN The purpose of this document is to familiarize the user with the basic concepts of a de-rating analysis, starting with circuit analysis and proceeding through documentation.

More information

I 1 - I 2 - I 3+ I 5- I 6 = 0

I 1 - I 2 - I 3+ I 5- I 6 = 0 S IR C.R.REDDY COLLEGE OF ENGINEERING ELURU 534 007 (A.P) N etworks Lab (ECE7) SIR C.R.REDDY COLLEGE OF ENGINEERING: : ELURU7 D EPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING E CE 7 NETWROKS L ABORATORY

More information

Concept Question: Capacitors

Concept Question: Capacitors oncept Question: apacitors Three identical capacitors are connected to a battery. The battery is then disconnected. A How do the charge on A, B & compare before and after the battery B is removed? BEFOE;

More information

Chapter 31: RLC Circuits. PHY2049: Chapter 31 1

Chapter 31: RLC Circuits. PHY2049: Chapter 31 1 hapter 31: RL ircuits PHY049: hapter 31 1 L Oscillations onservation of energy Topics Damped oscillations in RL circuits Energy loss A current RMS quantities Forced oscillations Resistance, reactance,

More information

Time - timing relays 1 Industrial relays, solid state output, width 22.5 mm

Time - timing relays 1 Industrial relays, solid state output, width 22.5 mm haracteristics Zelio ime - timing relays Industrial relays, solid state output, width. mm Presentation 08 he E9 range of relays is designed for simple, repetitive applications with short and intensive

More information

TB2. Data Sheet. Torque reference transducer. Special features. B en

TB2. Data Sheet. Torque reference transducer. Special features. B en T2 Torque reference transducer Data heet pecial features tandard version ptional: rotection I67 - ccuracy class 0.03 - s 100 m, 200 m, 500 m, 1 k m, 2 k m, 3 k m, 5 k m and 10 k m - High permissible oscillation

More information

Chopper-Stabilized, Two-Wire Hall-Effect Switches

Chopper-Stabilized, Two-Wire Hall-Effect Switches FETURES N ENEFITS E-Q100 automotive qualified High-speed, 4-phase chopper stabilization Low switchpoint drift throughout temperature range Low sensitivity to thermal and mechanical stresses On-chip protection

More information

MR certified. iq Series, Ultra Low ESR, NP0. RF & Microwave Capacitors, RoHS Compliant DESCRIPTION APPLICATIONS CIRCUIT APPLICATIONS

MR certified. iq Series, Ultra Low ESR, NP0. RF & Microwave Capacitors, RoHS Compliant DESCRIPTION APPLICATIONS CIRCUIT APPLICATIONS R & Microwave Capacitors, Ro Compliant DECRIPIO owest ER in class ighest working voltage in class - 500V tandard EI sizes aser Marked (optional) igh elf Resonance requencies PPICIO Cellular ase tation

More information

RC & RL Transient Response

RC & RL Transient Response EE 2006 University of Minnesota Duluth ab 8 1. Introduction R & R Transient Response The student will analyze series R and R circuits. A step input will excite these respective circuits, producing a transient

More information

MC1723C VOLTAGE REGULATOR

MC1723C VOLTAGE REGULATOR The 723 is a positive or negative voltage regulator designed to deliver load current to 50 mdc. Output current capability can be increased to several amperes through use of one or more external pass transistors.

More information

IRGPC50F Fast Speed IGBT

IRGPC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR PD - 9.695A Fast Speed IGBT Features Switching-loss rating includes all "tail" losses Optimized for medium operating frequency ( to khz) See Fig. for urrent vs. Frequency

More information

ECSE-1010 Formula Sheet Quiz 1 R C I C. C T = C 1 + C C n. 2 Laws and Rules V = IR

ECSE-1010 Formula Sheet Quiz 1 R C I C. C T = C 1 + C C n. 2 Laws and Rules V = IR ESE- Formula Sheet Quiz O NOT WTE ON THS SHEET ETUN SHEET FTE QU components esistors apacitors nductors symbol general equation combg series combg parallel impedance d d dt dt T = + +... + n T = + +...

More information

Void Induced Thermal Impedance in Power Semiconductor Modules: Some Transient Temperature Effects

Void Induced Thermal Impedance in Power Semiconductor Modules: Some Transient Temperature Effects Void nduced Thermal mpedance in Power Semiconductor Modules: Some Transient Effects.. Katsis and.. van Wyk enter for Power Electronics Systems The radley epartment of Electrical and omputer Engineering

More information

TE-R11-3 SERIES 1. PRODUCT APPEARANCE 2. OUTLINE DRAWING SPECIFICATION. Part Number Chip Material Color of Emission Lens Type Viewing Angle

TE-R11-3 SERIES 1. PRODUCT APPEARANCE 2. OUTLINE DRAWING SPECIFICATION. Part Number Chip Material Color of Emission Lens Type Viewing Angle 1 SPECIFICATION TE-R11-3 SERIES 1. PRODUCT APPEARANCE 2. OUTLINE DRAWING Notes: 1. All dimensions are in millimeters (inches). : 2. Tolerance is ± 0.25mm (0.01 ) unless otherwised noted. 3. Specifi cations

More information

DACO SEMICONDUCTOR CO., LTD.

DACO SEMICONDUCTOR CO., LTD. Nhannel Enhancement Mode MOSFET Features V SS = 9V Preliminary SOT227 S R S(ON) < 2 S Fully valanche Rated Pb Free & RoHS ompliant S solation Type Package Electrically solation base plate pplications P

More information

SHENZHEN MOTTO TECHNOLOGY CO., LTD

SHENZHEN MOTTO TECHNOLOGY CO., LTD -V2 20.11.26 Page : 1 Features & pplication: Product Structure * SMD Drum he for power line / signal line of various size SMD DIP Shield Unshield * ow Profile even 3x3x1.4 mm and low cost * To help you

More information

Lecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Restore Output. Pass Transistor Logic. How compare.

Lecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Restore Output. Pass Transistor Logic. How compare. ESE 570: igital Integrated ircuits and VLSI undamentals Lec 16: March 19, 2019 Euler Paths and Energy asics & Optimization Lecture Outline! Pass Transistor Logic! Logic omparison! Transmission Gates! Euler

More information

12 Chapter Driven RLC Circuits

12 Chapter Driven RLC Circuits hapter Driven ircuits. A Sources... -. A ircuits with a Source and One ircuit Element... -3.. Purely esistive oad... -3.. Purely Inductive oad... -6..3 Purely apacitive oad... -8.3 The Series ircuit...

More information

Representative Schematic Diagram. Standard Application ORDERING INFORMATION DEVICE TYPE/NOMINAL VOLTAGE MOTOROLA ANALOG IC DEVICE DATA

Representative Schematic Diagram. Standard Application ORDERING INFORMATION DEVICE TYPE/NOMINAL VOLTAGE MOTOROLA ANALOG IC DEVICE DATA The 7800, eries of positive voltage regulators are inexpensive, easytouse devices suitable for a multitude of applications that require a regulated supply of up to 00 m. ike their higher powered 7800 and

More information

Output Voltage (Vfan) C onvec tion-c ooled (6,7) F orc ed-c ooled (8) & C urrent

Output Voltage (Vfan) C onvec tion-c ooled (6,7) F orc ed-c ooled (8) & C urrent 5/ 8/ 25/ 35 W atts Convection/ Forced cooled Ratings Universal 85 264 VC Input IT & Medical Safety pprovals (Class I & II)

More information

LM148 Low Power Quad 741 Operational Amplifier

LM148 Low Power Quad 741 Operational Amplifier Low Power Quad 4 Operational mplifier www.fairchildsemi.com Features 4 op amp operating characteristics Low supply current drain. m/amplifier lass output stage no crossover distortion Pin compatible with

More information

Characteristic Symbol Value Unit Output Current I out 150 ma

Characteristic Symbol Value Unit Output Current I out 150 ma LBNB ma LOAD SWITH FEATURING OMPLEMENTARY BIPOLAR TRANSISTORS NEW PRODUT General Description LMNB is best suited for applications where the load needs to be turned on and off using control circuits like

More information

Dual 4-Input AND Gate

Dual 4-Input AND Gate TENIAL DATA Dual 4-Input AND ate The is high-speed Si-gate MOS device and is pin compatible with low power Schottky TTL (LSTTL). The device provide the Dual 4-input AND function. Outputs Directly Interface

More information

Course Updates. Reminders: 1) Assignment #10 due Today. 2) Quiz # 5 Friday (Chap 29, 30) 3) Start AC Circuits

Course Updates. Reminders: 1) Assignment #10 due Today. 2) Quiz # 5 Friday (Chap 29, 30) 3) Start AC Circuits ourse Updates http://www.phys.hawaii.edu/~varner/phys272-spr10/physics272.html eminders: 1) Assignment #10 due Today 2) Quiz # 5 Friday (hap 29, 30) 3) Start A ircuits Alternating urrents (hap 31) In this

More information

FEATURES 004 DC VOLTAGE RATING AT + 85 C S CASE CODE

FEATURES 004 DC VOLTAGE RATING AT + 85 C S CASE CODE 195 ishay prague olid Tantalum hip apacitors TNTMOUNT onformal oated TU Qualified, 3001/00/00 - T2 mm, 12mm Tape Packaging to I-1-1 reeling per I 2-3. 7 (17mm) standard 13 (0mm) available U and uropean

More information

6 5 /10 0 /13 0 W a t t s E C S S e r ie s A C D C. S p e c if ic a t io n. G e n e r a l. In p u t. E n v ir o n m e n t a l.

6 5 /10 0 /13 0 W a t t s E C S S e r ie s A C D C. S p e c if ic a t io n. G e n e r a l. In p u t. E n v ir o n m e n t a l. 6 5 /0 0 /3 0 W a t t s E C S S e r ie s IT & M e d ic a l S a fe ty A p p ro va ls 6 5 /8 0 /0 0 W C o nve c tio n c o o le d R a ting s C la s s I & C la s s II C o ns truc tio n Ind us try S ta nd a

More information

PART TOP VIEW. Maxim Integrated Products 1

PART TOP VIEW. Maxim Integrated Products 1 9-96; Rev ; 2/ 45, SPDT Analog Switch in SOT23-8 General Description The is a dual-supply, single-pole/doublethrow (SPDT) analog switch. On-resistance is 45 max and flat (7 max) over the specified signal

More information

IRGB4055PbF IRGS4055PbF

IRGB4055PbF IRGS4055PbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V E(on) and Energy per Pulse (E PULSE TM ) for improved panel efficiency l High

More information

Triple 3-Input NOR Gate

Triple 3-Input NOR Gate TENIAL DATA IN4T2A Triple 3-Input NOR ate The IN4T2A is high-speed Si-gate MOS device and is pin compatible with low power Schottky TTL (LSTTL). The device provide the Triple 3-input NOR function. Outputs

More information

ATC 900 C Series X7R Ceramic RF Power Multilayer Capacitors

ATC 900 C Series X7R Ceramic RF Power Multilayer Capacitors A 900 Series X7R eramic RF Power Multilayer apacitors ase Size apacitance Range (.250" x.250") 0.01 µf to 1 µf ow ESR/ES Mid-K Rugged onstruction High Reliability Available with Encapsulation Option* A,

More information

8.1 Alternating Voltage and Alternating Current ( A. C. )

8.1 Alternating Voltage and Alternating Current ( A. C. ) 8 - ALTENATING UENT Page 8. Alternating Voltage and Alternating urrent ( A.. ) The following figure shows N turns of a coil of conducting wire PQS rotating with a uniform angular speed ω with respect to

More information

User Manual. 1000BASE-T1 SFP Module

User Manual. 1000BASE-T1 SFP Module User anual 1000-1 odule Version 0.3 05. June 2017 echnica ngineering Gmb eopoldstraße 236 80807 ünchen Germany ax: +49-89-200-072430 mail: nfo@technica-engineering.de www.technica-engineering.de ndex 1

More information

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 MUN534W, NSB4YPXV6, NSB4YPP6 omplementary Bias Resistor Transistors R = 0 k, R2 = 47 k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace

More information

Towards Fully Integrated Power Management

Towards Fully Integrated Power Management Towards Fully Integrated Power Management Jeffrey Morroni General Manager Kilby Power &D Texas Instruments The Power Management EndGame Invisible 100% Efficiency, 0 Volume EasytoUse omplete power management

More information

Multilayer Ceramic Chip Trimmer Capacitors

Multilayer Ceramic Chip Trimmer Capacitors Series Four asic Types: -P - -1-1 S-P -P S- - S-P1.5 -P1.5 S-P -P Philips djust. Setting drift 1% w/ Philips djust. Low profile w/ Philips djust. everse ultra thin w/ Philips djust. How To Order: 03 1

More information

PLASTIC FILM CAPACITORS

PLASTIC FILM CAPACITORS PLASIC FILM CAPACIORS APPLICAION GUIDELINES FOR PLASIC FILM CAPACIORS 1.Circuit Design (1) Please make sure that the environmental and mounting conditions in which the capacitor will be exposed are within

More information

MF-MSMF Series - PTC Resettable Fuses

MF-MSMF Series - PTC Resettable Fuses *RoHS & E OMPLINT Features n ompliant with E-Q00 Rev-- Stress Test Qualification for Passive omponents in utomotive pplications n 00 % electrically compatible with all previous generations of 8 SMT devices

More information

ILX485 Low-Power, Slew-Rate-Limited RS-485/RS-422 Transceivers

ILX485 Low-Power, Slew-Rate-Limited RS-485/RS-422 Transceivers Low-Power, Slew-Rate-Limited RS-485/RS-422 Transceivers General Description The ILX485 is low-power transceivers for RS-485 and RS- 422 communication. I contains one driver and one receiver. The driver

More information

Low-Power, High-Speed CMOS Analog Switches

Low-Power, High-Speed CMOS Analog Switches New Product G1B/3B/5B Low-Power, High-peed MO Analog witches FEATURE BENEFIT APPLIATION 44-V upply Max Rating 15-V Analog ignal Range On-Resistance r (on) : 23 Low Leakage I (on) : pa Fast witching t ON

More information

Schedule. ECEN 301 Discussion #20 Exam 2 Review 1. Lab Due date. Title Chapters HW Due date. Date Day Class No. 10 Nov Mon 20 Exam Review.

Schedule. ECEN 301 Discussion #20 Exam 2 Review 1. Lab Due date. Title Chapters HW Due date. Date Day Class No. 10 Nov Mon 20 Exam Review. Schedule Date Day lass No. 0 Nov Mon 0 Exam Review Nov Tue Title hapters HW Due date Nov Wed Boolean Algebra 3. 3.3 ab Due date AB 7 Exam EXAM 3 Nov Thu 4 Nov Fri Recitation 5 Nov Sat 6 Nov Sun 7 Nov Mon

More information

METAL OXIDE VARISTORS TNR

METAL OXIDE VARISTORS TNR MEA OXIE VARISORS NR?FEAURES @arge surge capability (the surge current ratings of NR V series, by / M Sec., are about two times larger than NR G series). @arge energy capability (1. time larger than NR

More information

ON OFF PART. Pin Configurations/Functional Diagrams/Truth Tables 5 V+ LOGIC

ON OFF PART. Pin Configurations/Functional Diagrams/Truth Tables 5 V+ LOGIC 9-88; Rev ; /7 25Ω SPST Analog Switches in SOT23-6 General Description The are dual-supply single-pole/single-throw (SPST) switches. On-resistance is 25Ω max and flat (2Ω max) over the specified signal

More information

METAL OXIDE VARISTORS TNR TM

METAL OXIDE VARISTORS TNR TM MEA OXIE VARISORS NR M?FEAURES @arge surge capability (the surge current ratings of NR V series, by / Ms, are about two times larger than NR G series). @arge energy capability (1. time larger than NR G

More information

mywbut.com Lesson 16 Solution of Current in AC Parallel and Seriesparallel

mywbut.com Lesson 16 Solution of Current in AC Parallel and Seriesparallel esson 6 Solution of urrent in Parallel and Seriesparallel ircuits n the last lesson, the following points were described:. How to compute the total impedance/admittance in series/parallel circuits?. How

More information

10W DC-DC Regulated Single Output

10W DC-DC Regulated Single Output Jameco SKU Number: 2102001 10W DC-DC Regulated Single Outut NSD10-S s e ries SECIFICATION MODEL OUTUT INUT OTHERS NOTE DC VOLTAGE RATED CURRENT CURRENT RANGE RATED OWER RILE & NOISE (max.) Note.2 75mV-

More information

CHEM*3440. Current Convention. Charge. Potential Energy. Chemical Instrumentation. Rudimentary Electronics. Topic 3

CHEM*3440. Current Convention. Charge. Potential Energy. Chemical Instrumentation. Rudimentary Electronics. Topic 3 urrent onvention HEM*3440 hemical nstrumentation Topic 3 udimentary Electronics ONENTON: Electrical current flows from a region of positive potential energy to a region of more negative (or less positive)

More information

KEMET. KEMET Electronics Corporation P.O. Box 5928 Greenville, SC Tel: FAX: CAPACITORS

KEMET. KEMET Electronics Corporation P.O. Box 5928 Greenville, SC Tel: FAX: CAPACITORS KEMET PITORS Parts shown are actual size Due to ever changing technology, all series may not be depicted. KEMET Electronics orporation P.O. Box 5928 Greenville, S 29606 Tel: 864-963-6300 : 864-963-6521

More information

MAX6325/MAX6341/MAX6350

MAX6325/MAX6341/MAX6350 VILLE 19-123; Rev 1; 1/1 Pin onfiguration 8V TO 36V INPUT TOP VIEW 2.2µF * NR IN TRI REFERENE 2.2µF * I.. IN NR 1 2 3 4 DIP/SO 8 7 6 5 I.. I.. TRI *OPTIONL I.. = INTERNLLY ONNETED; DO NOT USE For pricing,

More information

ITTC Recommended Procedures and Guidelines Performance, Propulsion 1978 ITTC Performance Prediction Method

ITTC Recommended Procedures and Guidelines Performance, Propulsion 1978 ITTC Performance Prediction Method I ecommended 1978 I erformance rediction ethod 7.5 0 age 1 of 9 008 evision able of ontents 1978 I erformance rediction ethod... 1. UOE OF OEUE.... EIION OF OEUE....1 Introduction.... efinition of the

More information