For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.
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1 Current Transducer GO-SMS/SP3 series I P N = A Ref: GO 10-SMS/SP3, GO 20-SMS/SP3, GO 30-SMS/SP3 For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit. Provisional Features Hall effect measuring principle Galvanic separation between primary and secondary circuit Insulated test voltage 3000 V RMS Low power consumption Extremely low profile Double overcurrent detection Fixed offset & sensitivity Response time 2 µs. Special feature Single power supply +3.3 V. Advantages Small size and space saving High immunity to external interference High insulation capability Low electrical resistance (0.75 mω) No magnetic hysteresis Robust against external fields and cross-talk. Applications Small drives HVAC Appliances E-Bikes Solar. Standards EN IEC IEC/UL (pending). Application Domains Industrial. N G ; N G ; N G Page 1/10
2 Absolute maximum ratings Parameter Symbol Unit Min Typ Max Conditions Maximum supply voltage (not destructive) Maximum supply voltage (not entering nonstandard modes) U C max Maximum overload capability Î P max A ±200, 1 ms pulse Maximum electrostatic discharge voltage (HMB-Human Body Model) Maximum electrostatic discharge voltage (CDM-Charged Device Model) V U ESD HBM V 2000 AEC-Q REV D U ESD CDM V 500 AEC-Q REV B Maximum output current source I out max ma 25 Maximum output current sink I out max ma 50 Maximum junction temperature T J max C Insulation coordination Parameter Symbol Unit Value Comment RMS voltage for AC insulation test, 50 Hz, 1 min U d V 3000 Impulse withstand voltage 1.2/50 μs Û W V 4000 Partial discharge RMS test voltage (q m < 5 pc) U t V 850 Clearance (pri. - sec.) d CI mm 7 According to IEC , IEC , UL Primary/secondary Corresponds to a recurring peak voltage of 728 V peakto-peak According to IEC , IEC Shortest distance through air Creepage distance (pri. - sec.) d Cp Shortest path along body Comparative tracking index CTI < 600 Material group II Application example V 300 V RMS CAT III, PD2 Basic insulation according to IEC , IEC , UL Application example V 515 V RMS/ 728 V peakto peak CAT II, PD2 Basic insulation according to IEC IEC , UL Environmental and mechanical characteristics Parameter Symbol Unit Min Typ Max Conditions Ambient operating temperature C Ambient storage temperature T S C Resistance of the primary R P mω 0.75 Thermal resistance, junction to board 1) R th JB K/W 9 Time constant t s 1 To reach steady state Note: 1) Done on LEM evaluation board PCB2325. Page 2/10
3 Block diagram I P U C Clock Voltage Regulator Reference V ref Amplification and filters Driver and filter X Chopping X De-chopping V out Calibration stored in EEPROM U E OCD I P Connection diagram Pin# Name Function From 1 to 4 I P+ Input of the primary current From 5 to 8 I P Output of the primary current 9 Ground 10 V ref Reference voltage (output) 11 NC No connected pin, leave floating 12 V out Output voltage 13 OCD_EXT Output of the external over current detection 14 U C Supply voltage 15 U E OCD External OCD voltage 16 OCD_INT Output of the internal over current detection, factory setting +U c +U c 10kΩ 10kΩ OCD_INT GO-SMS R E R E REF 1 OCD-INT U E OCD +U c U c +U c 4 5 OCD-EXT nF OCD_EXT 6 7 V out NC V ref nF V out V ref nF Page 3/10
4 Electrical data GO 10-SMS/SP3 At = 40 C 125 C, U C = +3.3 V, R L = 10 kω unless otherwise noted. GO-SMS/SP3 series Parameter Symbol Unit Min Typ Max Conditions Primary nominal RMS current I P N A 10 Primary current, measuring range I P M A Supply voltage U C V Current consumption I C ma Reference voltage (output) V ref V C Reference voltage (input) V ref V U C = V Output voltage I P M V out V ref V Output internal resistance R out Ω 5 Up to 10 khz Reference internal resistance R ref Ω Load resistance R L kω Capacitive loading C L nf 0 6 Theoretical sensitivity G th mv/a 50 Electrical offset I P N = 0 V O E mv 5 5, V out V V ref Electrical offset current referred to I P N I O E ma Temperature coefficient of V ref TCV ref ppm/k V ref Temperature coefficient of V O E TCV O E mv/k Temperature coefficient of I O E TCI O E ma/k Temperature coefficient of G TCG ppm/k Step response time to 90 % of I P N t r µs 2 Reaction 10 % of I P N t ra µs 1.5 Frequency bandwidth 3 db, BW KHz 300 Output noise voltage spectral density e no µv/hz 1/2 8 NBW = 1 khz 100 khz Internal overcurrent detection (OCD) threshold I I OCD A 2.69 I P N Factory setting EEPROM Internal OCD threshold error ε I OCD % 8 8 of peak value Internal OCD output on resistance R on I OCD Ω Internal OCD output hold time t hold I OCD µs Internal OCD response time t r I OCD µs open drain output, active low Sensitivity error ε G % 1 1 Factory adjustment Linearity error 0 I P N % Linearity error 0 I P M % ε % = 85 C 1) ε % = 105 C = 125 C ε % ε % Page 4/10
5 Electrical data GO 20-SMS/SP3 At = 40 C 125 C, U C = +3.3 V, R L = 10 kω unless otherwise noted. GO-SMS/SP3 series Parameter Symbol Unit Min Typ Max Conditions Primary nominal RMS current I P N A 20 Primary current, measuring range I P M A Supply voltage U C V Current consumption I C ma Reference voltage (output) V ref V C Reference voltage (input) V ref V U C = V Output voltage I P M V out V ref V Output internal resistance R out Ω 5 Up to 10 khz Reference internal resistance R ref Ω Load resistance R L kω Capacitive loading C L nf 0 6 Theoretical sensitivity G th mv/a 25 Electrical offset I P N = 0 V O E mv 5 5, V out V V ref Electrical offset current referred to I P N I O E ma Temperature coefficient of V ref TCV ref ppm/k V ref Temperature coefficient of V O E TCV O E mv/k Temperature coefficient of I O E TCI O E ma/k Temperature coefficient of G TCG ppm/k Step response time to 90 % of I P N t r µs 2 Reaction 10 % of I P N t ra µs 1.5 Frequency bandwidth 3 db, BW KHz 300 Output noise voltage spectral density e no µv/hz 1/2 4.5 Internal overcurrent detection (OCD) threshold NBW = 1 khz 100 khz I I OCD A 3.05 I P N Factory setting EEPROM Internal OCD threshold error ε I OCD % 8 8 of peak value Internal OCD output on resistance R on I OCD Ω Internal OCD output hold time t hold I OCD µs Internal OCD response time t r I OCD µs open drain output, active low Sensitivity error ε G % 1 1 Factory adjustment Linearity error 0 I P N % Linearity error 0 I P N % ε % = 85 C 1) ε % = 105 C = 125 C ε % ε % Page 5/10
6 Electrical data GO 30-SMS/SP3 At = 40 C 125 C, U C = +3.3 V, R L = 10 kω unless otherwise noted. GO-SMS/SP3 series Parameter Symbol Unit Min Typ Max Conditions Primary nominal RMS current I P N A 30 Primary current, measuring range I P M A Supply voltage U C V Current consumption I C ma Reference voltage (output) V ref V C Reference voltage (input) V ref V U C = V Output voltage I P M V out V ref V Output internal resistance R out Ω 5 Up to 10 khz Reference internal resistance R ref Ω Load resistance R L kω Capacitive loading C L nf 0 6 Theoretical sensitivity G th mv/a 16.7 Electrical offset I P N = 0 V O E mv 5 5, V out V V ref Electrical offset current referred to I P N I O E ma Temperature coefficient of V ref TCV ref ppm/k V ref Temperature coefficient of V O E TCV O E mv/k Temperature coefficient of I O E TCI O E ma/k Temperature coefficient of G TCG ppm/k Step response time to 90 % of I P N t r µs 2 Reaction 10 % of I P N t ra µs 1.5 Frequency bandwidth 3 db, BW KHz 300 Output noise voltage spectral density e no µv/hz 1/2 4.5 NBW = 1 khz 100 khz Internal overcurrent detection (OCD) I A 3.05 I I OCD threshold P N Factory setting EEPROM Internal OCD threshold error ε % 8 8 of peak value I OCD Internal OCD output on resistance R on I OCD Ω Internal OCD output hold time t hold I OCD µs Internal OCD response time t r I OCD µs open drain output, active low Sensitivity error ε G % 1 1 Factory adjustment Linearity error 0 I P N % Linearity error 0 I P N % ε % = 85 C 1) ε % = 105 C = 125 C ε % ε % Note: 1) Measurement error ε: ε TA TCV O E = ( + ε G ) + ( + TCG 10 ) -6 (T I P N G A 25) 100 Page 6/10
7 External overcurrent detection Parameter Symbol Unit Specification Min Typical Max External OCD voltage U E OCD V External OCD output on resistance to ground R on E OCD Ω External OCD response time t r E OCD µs 10 External OCD output hold time t hold E OCD µs 10 Internal OCD threshold error ε I OCD % ±5 Conditions To be added to the transducer response time Switch point error between V out and U E OCD Page 7/10
8 Dimensions (in mm) Page 8/10
9 Tape and reel dimensions (in mm) LOCK FEATURE 6 PLACES MATTE FINISH THESE AREAS REVISIONS NO. DESCRIPTION DATE BY LOKREEL MINNEAPOLIS, USA U.S. PAT REF REF SEE DETAIL "A" NOMINAL HUB WIDTH +.6 W W MAX W1 (MEASURED AT HUB) 8mm W2 (MEASURED AT HUB) Ø20.2 MIN 12mm 16mm U.S. PATENT mm mm All Dimensions in Millimeters - Ø ±0.5 44mm mm TOLERANCES (EXCEPS NOTED) DECIMAL ASSEMBLED 330mm LOKREEL, 4" HUB DETAIL "A" ± FRACTIONAL ± ANGULAR ± DRAWN BY CHK'D TRACED T.S. SCALE DATE APP'D NONE 9/11/96 MATERIAL DRAWING NO. N/A A Notes: 1) 10 Sprocket hole pitch cumulative tolerance ± 0.2 mm 2) Camber in compliance with EIA 481 3) Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole. Page 9/10
10 Soldering requirements MSL3, 260 C - IPC/JEDEC J-STD-020 Ordering information Item number Description Package type Package quantity G GO 10-SMS/SP3 Reel 1500 G GO 10-SMS/SP3 KIT 5P Blister 5 G GO 10-SMS/SP3 SET OF 50 PCS SMD Bag 50 G GO 20-SMS/SP3 Reel 1500 G GO 20-SMS/SP3 KIT 5P Blister 5 G GO 20-SMS/SP3 SET OF 50 PCS SMD Bag 50 G GO 30-SMS/SP3 Reel 1500 G GO 30-SMS/SP3 KIT 5P Blister 5 G GO 30-SMS/SP3 SET OF 50 PCS SMD Bag 50 Page 10/10
For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.
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