Active Load. Reading S&S (5ed): Sec. 7.2 S&S (6ed): Sec. 8.2
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1 cte La ean S&S (5e: Sec. 7. S&S (6e: Sec. 8. In nteate ccuts, t s ffcult t fabcate essts. Instea, aplfe cnfuatns typcally use acte las (.e. las ae w acte eces. Ths can be ne usn a cuent suce cnfuatn,.e. han a cuent suce as a la (nstea f. Lae Snal (Bas Sall Snal s can be seen f e abe ccuts, e cuent euces t a cuent suce whch bases e tansst. F sall snals, cuent appeas as a esst, (See pae 5-,.e., Theefe (Nte G s left f cpleteness but es nt est n e abe ccut n G // ( // ne aantae f acte las s at ey allw f uch lae an. F a CS aplfe base w a, we hae V S V I (If base w tw ltaes suces, eplace V n abe w V V SS. Snce ECE0 Lectue Ntes (Wnte 00 7-
2 I V V ( // I V V V V V The alue f (V V s typcally lte t > 50 V (stn nesn assuptn. s a esult, e au an s 40 V. Oe e yeas w newe pcess eneatns, e supply ltae has been lwee t.v (easn: lwe pwe cnsuptn an neee t ensue elable peatn when ece szes shnk. W an acte la: ( // I V V V I V V V V I W V 5 V, e an can be up t aun 500 (typcally less uh. Ths can als be seen n e peatn space f Q (belw. KVL uh Q an Q pes e la cue f e ccut. Opeatn pnt f e aplfe s between pnts an B. The nese f e slpe f s lne s e effecte seen by e CS aplfe ( n s case. The fue shws at uch lae V wul be eque f we ty t achee e sae an w a scete esst (passe la. Clealy, a cuent can als be use as an acte la f e MOS aplfe cnfuatns. V λ 0 V ECE0 Lectue Ntes (Wnte 00 7-
3 Casce Casce aplfe s a cbnatn f a CS an CG aplfe Lettn L (t et e pen-lp an an usn ne-ltae e (nte s ( Thus, The utput peance f e aplfe can be fun by zen e nput ltae ( s 0 an fnn e effecte esstance between an e un. Snce s 0, e fst cntlle suce beces an pen ccut as s shwn belw. Because f e secn cuent suce, we nee t fn by attachn a ltae suce,, between an e un an calculatn. C C 0 0 s KVL: ( s ( ( ECE0 Lectue Ntes (Wnte
4 T bette unestan e pact f e CG pat f e Casce aplfe, we cnse an altenate appach t cputn. We nte at e utput staes f a ltae aplfe an a tanscnuctance aplfe (belw ae equalent: e ltae aplfe utput s n Theenn f an e tanscnuctance aplfe utput s n Ntn f, w ben e sae an e sht-ccut tanscnuctance, G s elate t pen-lp ltae an,. uh G Ths equalency leas t ane e t cpute uh cputn G whch ay be ease n se pbles an/ pes atnal nsht. F eaple, f e Casce aplfe abe, Inn an, ne fns (nte e ectn f G G s s s G G. Ths shws at G f e casce aplfe s e sae f e fst stae CS aplfe (see sall ccut el n pae 7-3, e CG aplfe acts as a cuent buffe nceasn e utput esstance an eall pen-lp an f e ccut. If we nt ne an, G G s (. s s G s s s.( s Whch wul leas e sae epessn f n pae 7-3. s s ECE0 Lectue Ntes (Wnte
5 Casce cuent steen ccuts Snce e cuent suce wll als nee t pleent w MOSFETs, t s ptant t als ncease ts sall snal esstance. Ths s pssble usn a casce tansst ee as well. ppate: 0 0 C C ffeental pa w acte la an ffeental utput If a ffeental utput s necessay (e.. e utput f e ffeence aplfe s attache t ane ffeence aplfe, e acte la s a ptn f cuent ccut (an-ate cnnecte tansst pat lea t a cnstant bas ltae f V G. s can be seen e ccut s syetc an behae as a ffeence aplfe w essts. s such, ( ( 3 CM 0 ECE0 Lectue Ntes (Wnte
6 ffeental pa w acte la an snle ene utput If a snle-ene utput s eque, a cuent pa can be utlze as e acte la (Q3 an Q4 ae entcal an Q an Q ae entcal. Nte at s ccut s NOT syetc anye. Bas: Snce V 3 V 4, I 3 I 4 I/ I I as s shwn (Bas wll be syetc ECE0 Lectue Ntes (Wnte
7 Sall snal analyss: Because e ccut s NOT syetc, we cannt use half ccut. Hwee, snce ate cuents ae ze, e an-ate cnnecte tansst wll act as a e-cnnecte tansst an e sall snal ccut beces: Ne s3.( 3 3. ( Ntn at, we et // ( 4 The cn e an can be fun n a sla anne (see Sea & S 6e, sec ECE0 Lectue Ntes (Wnte
8 Tw-stae CMOS aplfe ut ( // 4 6 ( 6 // 7 ut ( // 4 6 ( 6 // 7 (We wll scuss hh-fequency peatn an Mlle Thee n e net sectn Nw lets assue e nant ple s ceate by Mlle capact C C. eebe, e Mlle effect causes s capact t appea lae. C eq C C ( CC ( 6 ( 6 // 7 CC 6 ( 6 // 7 s // 4 ω 3B s C eq C C 6 ( 6 // 7 ( // 4 The GBW s: GBW ω3 B CC ECE0 Lectue Ntes (Wnte
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