Lecture 2 Thin Film Transistors

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1 Lecture 2 Thin Film Transistors 1/60 Announcements Homework 1/4: Will be online after the Lecture on Tuesday October 2 nd. Total of 25 marks. Each homework contributes an equal weight. All homework contributes to 40% of overall grade. Each homework contributes 10% of overall grade. ue Tuesday October 9 th at the start of the lecture (10:00am). I will return it one week later (October 16 th ). Homework 1 will consist of content covered in Lectures 1, 2, 3 and 4. 2/60 1

2 Lecture 2 Operating Principles of FETs. TFT-riven LE isplays. Mobility. 3/60 Operating Principles of TFTs 4/60 2

3 What is a Transistor? A transistor is 3-terminal electronic switch. Used to control flow of current between two terminals via a third terminal. Primarily they are used to either: Amplify a signal. Process information (when combined). Intel 5/60 What is a Transistor? Broadly there are two types of transistors. Bipolar Junction Transistor Collector Field-Effect Transistor (FET) rain Base Emitter ource Their behavior is (basically) the same. Their operation mechanisms are significantly different however. 6/60 3

4 ource-rain Flow ource-rain Flow Water Analogy Consider an analogy of water flowing in pipes. rain Flow Meter ource Pressure 7/60 Water Analogy Consider an analogy of water flowing in pipes. rain Flow Meter ource Pressure 8/60 4

5 ource-rain Flow ource-rain Flow Water Analogy Consider an analogy of water flowing in pipes. rain Flow Meter ource Pressure 9/60 Water Analogy Consider an analogy of water flowing in pipes. rain Flow Meter ource Pressure 10/60 5

6 ource-rain Flow ource-rain Current Water Analogy Consider an analogy of water flowing in pipes. rain Flow Meter ource Pressure 11/60 Electrical Behavior A transistor can be considered to behave in a similar way: Voltage rain Voltage Ammeter Voltage 12/60 6

7 ource-rain Current ource-rain Current Electrical Behavior A transistor can be considered to behave in a similar way: rain Voltage Voltage Ammeter Voltage 13/60 Electrical Behavior A transistor can be considered to behave in a similar way: Voltage rain Voltage Ammeter Voltage 14/60 7

8 ource-rain Current Electrical Behavior A transistor can be considered to behave in a similar way: rain Voltage Voltage Ammeter Voltage 15/60 Electrical Behavior Real transistors do not show this ideal behavior in reality: rain Voltage 10-3 V = 100 V 10-4 Voltage V = 10 V I (A) Ammeter (V) 16/60 8

9 tructure of FETs A field effect transistor (FET) consists of three metal terminals, a semiconducting channel and a insulating dielectric. ource () and drain () electrodes are (normally) symmetric and in direct contact with the semiconducting channel. Insulating dielectric separates semiconductor from 3rd (gate) terminal. emiconductor ielectric () ource rain 17/60 tructure of FETs A wide range of FET structures exist. Bottom-, Top-Contact emiconductor ielectric () Bottom-, Bottom-Contact emiconductor ielectric () Top-, Bottom-Contact ielectric emiconductor ubstrate (Insulator) 18/60 9

10 tructure of FETs A wide range of FET structures exist. Notice no dielectric MEFET Inversion mode FETs Fin-FETs emiconductor ubstrate (Insulator) ielectric emiconductor ubstrate (Insulator) 19/60 Operating Principles of FETs For our purposes we will consider a Bottom-, Top-Contact FET. emiconductor ielectric () The principles discussed are general. As are the models we discuss next lecture. 20/60 10

11 Operating Principles of FETs Typically source electrode is grounded, voltages are applied to the drain and gate electrodes. emiconductor ielectric () V 21/60 Operating Principles of FETs First, let s consider structure under source electrode. emiconductor ielectric () V ource emiconductor ielectric 22/60 11

12 Valence Band Conduction Band Valence Band Conduction Band Operating Principles of FETs First, let s consider structure under source electrode. emiconductor ource ource emiconductor ielectric 23/60 Operating Principles of FETs First, let s consider structure under source electrode. emiconductor ource ource e - E emiconductor ielectric + e 24/60 12

13 ource-rain Current (I ) Operating Principles of FETs Typically source electrode is grounded, voltages are applied to the drain and gate electrodes. ielectric () 25/60 Operating Principles of FETs Application of gate voltage leads to injection of electrons into semiconductor, increasing conductivity. E ielectric () rain Voltage (V ) 26/60 13

14 ource-rain Current (I ) ource-rain Current (I ) Operating Principles of FETs Application of drain voltage then leads to a flow of electrons between the source and drain electrodes. E ielectric () V rain Voltage (V ) 27/60 Operating Principles of FETs As V increases relative to, the field rotates and the distribution of accumulated charges changes. E ielectric () V rain Voltage (V ) 28/60 14

15 ource-rain Current (I ) ource-rain Current (I ) Operating Principles of FETs As the distribution becomes inhomogeneous, relationship between I and V becomes non-linear. E ielectric () V rain Voltage (V ) 29/60 Operating Principles of FETs Eventually channel becomes pinched off and no carriers are present adjacent to drain electrode. E ielectric This region has very high resistance () V rain Voltage (V ) 30/60 15

16 ource-rain Current (I ) ource-rain Current (I ) Operating Principles of FETs Pinched-off point moves towards center of channel. E ielectric () V rain Voltage (V ) 31/60 Operating Principles of FETs Further increasing V will not substantially increase I but leads to an expansion of the depletion region. E ielectric aturation regime () V Linear Regime rain Voltage (V ) 32/60 16

17 Output Characteristics Holding gate voltage constant and sweeping drain voltage. 300 = 5V to 80V emiconductor ielectric () V I ( A) V (V) 33/60 Transfer Characteristics Holding drain voltage constant and sweeping gate voltage. emiconductor ielectric () V I (A) 10-3 V = 100V (V) V = 10V 34/60 17

18 Conduction Band Valence Band Polarity of Transistors The type of transistor is determined by the relative position of conduction and valence bands relative to work function of electrodes. N-Type P-Type I I Voltage Voltage 35/60 N-Type Transistors N-type transistors transport electrons but not holes. emiconductor Electrodes emiconductor ielectric e - φ () e - h + 36/60 18

19 Conduction Band Valence Band Conduction Band Valence Band P-Type Transistors P-type transistors transport holes but not electrons. emiconductor Electrodes emiconductor ielectric e - () h + e - φ 37/60 Ambipolar Transistors Ambipolar (sometimes called bipolar) transistors are unique in that they can inject and transport both holes and electrons, under the correct biasing conditions. emiconductor Electrodes ee Lecture 13 emiconductor ielectric () Requires narrow band gap e - h + φ 38/60 19

20 TFT-riven LE isplays 39/60 TFT-Backplanes Currently, the main application for TFTs is large area-displays. We want to change this ome new displays employ OLEs rather than LEs. These devices use The O is for organic. organic molecules as semiconductors. More on this in Lecture 6 40/60 20

21 Pixel Circuits Below is a typical circuit used to drive an LE. It consists of 2 transistors and 1 capacitor: 2T-1C. Each unique LE is addressed via a signal (V sig ) and scan (V scan ) voltage. V cc These voltages should be C s refreshed at a rate of 60Hz. V sig V scan witch TFT rive TFT LE There are also two C biases: V cc and V cath. Typically V cc V cath 20V. For battery-operated products this would have to be lower. V cath 41/60 Pixel Circuits This is a prototype all-organic LE and TFT circuit. Yagi. et. al., I igest., 38 (2007), /60 21

22 Gradual Channel Approximation There is a widely-used equation for describing the current as a function of voltage in transistors. It is called the gradual channel approximation, and we will derive next lecture. rain Current Channel Width Voltage I = W L μc ox V T V V 2 2 ource-rain Voltage rain V Channel Length Mobility Threshold Voltage Capacitance of oxide / dielectric ource 43/60 Gradual Channel Approximation ay we apply voltages = V ~20V, and the threshold voltage (V T ) is zero. I = W L μc ox V T V V 2 2 I = W L μc ox 200 The dielectric capacitance depends on a number of factors (see Lecture 10), but we will approximate it to be C ox = 200 nf/cm 2. I = W L μ I = W μ L 44/60 22

23 LE LEs require a reasonable amount of current to operate. Typically ~10mA. Capelli. et. al., Nature. Mater., 9 (2010), /60 Gradual Channel Approximation I = W L μ We want currents ~10mA = W L μ μ = 250 L W cm2 /Vs o, if we made the TFT length and width equal, we would need a mobility of μ = 250 cm 2 /Vs. This is very high for thin-film materials. We could however reduce required mobility by increasing width / length ratio. 46/60 23

24 TFT imensions What sort of size TFT are we talking about? There will be 3 copies of this circuit for each pixel; one for each color (red, green, blue). Hence, for each pixel there will be 6 TFTs. V cc ome example resolutions: V sig V scan witch TFT C s rive TFT LE Name Horizontal Pixels Horizontal Pixels TFTs (millions) 720p p K K V cath 47/60 8K Example Let s consider an 8K monitor / television. We will just say the monitor is 1m wide. For 8K, this is 7,680 pixels m -1. Or 23,040 TFTs m -1. This gives us ~20 μm per TFT, including interconnects and other components. o we should target 5 μm channel length TFTs. 48/60 24

25 TFT imensions If L = 5 μm, then with a W = 50 μm, we would only need a mobility of: μ = cm2 /Vs μ = 25 cm 2 /Vs Which is a lot more achievable. Is this possible for such a high-density display? Possibly, with interdigitated electrodes. 49/60 Mobility Requirements o what do we need for large-area electronics? There is no short answer. For higher-density, it is harder to make W L. Mobility needs to improve for higher-density displays. For portable displays V 2V. I = W L μc ox V T V V 2 For now, μ ~ 10 cm 2 /Vs is a good target. 2 Higher mobility If μ > 100 cm 2 /Vs, a lot more applications would be possible. 50/60 25

26 Mobility 51/60 Mobility Mobility is the main figure of merit for transistors. It is basically the velocity at which a carrier moves in a semiconductor, normalized for electric field: μ = v E e- E ince carriers reach terminal velocity very quickly (in most systems) we are do not consider acceleration in our formulism. 52/60 26

27 Mobility Normally the mobilities for electrons and holes are dissimilar: μ e μ h. ome compounds are very anisotropic: Temperature is also very important. Nanoscale, 2016, 8, chlom et. al. Nature Materials 9, (2010) J. Mater. Chem. C, 2017, 5, /60 Why is it Important? The speed at which transistors can switch states circuits process information is highly dependent upon mobility. The mobility also quantifies the amplification properties of a transistor. We will cover the gradual channel approximation in the next lecture: Mobility I = W L μc ox V T V V 2 ubstrate Electrode 2 I (A) ielectric ource / rain Electrodes emiconductor (V) 54/60 27

28 Effective Mass Effective mass (m ) comes up often in the discussion of mobility. μ 1 m Basically it is a formalism which allows us use Newtonian laws of motion when describing a particle (electron or hole) in a solid. We just describe the mass of the electron (or hole) as having a different mass to what it would have in a vacuum. m m 55/60 Effective Mass A note about this: This approximation is derived [1] using the following relationship between band energy and momentum: m = Momentum ħ2 d 2 E dk 2 Energy m ij = ħ 2 2 E k i k j This assumes that bands are parabolic. This is, at best, normally only locally true near maxima / minima. [1] olid tate Physics, Hook and Hall, Wiley 56/60 28

29 Long-Range Mobility Traditional (crystalline) semiconductor models, describe mobility as a fundamental property of the material. i i i i i i i i i i i i i i i Mobility in ilicon i i i i i 57/60 Long-Range Mobility We will see in Lecture 4, that we cannot describe our materials in the same way. This is because our systems generally lack long-range order. 58/60 29

30 Long-Range Mobility o we need to consider the long-range microstructure, not just the elemental / molecular orbital properties. For example, we may have to describe carriers as quantum-mechanically tunneling between sites: E e e e e e e 59/60 Next Time We will derive the gradual channel approximation. L L L W W V V x x V 0 = 0 We will use it to evaluate carrier mobility. μ lin = I = W L μc ox V T V V 2 V L = V L WC ox V di d μ sat = 2L WC ox d I d /60 30

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