Recent progress on single-mode quantum cascade lasers
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1 Recent progress on single-mode quantum cascade lasers B. Hinkov 1,*, P. Jouy 1, A. Hugi 1, A. Bismuto 1,2, M. Beck 1, S. Blaser 2 and J. Faist 1 * bhinkov@phys.ethz.ch 1 Institute of Quantum Electronics, Swiss Federal Institute of Technology (ETH), Zürich, Switzerland 2 Alpes Lasers SA, Neuchâtel, Switzerland
2 1. Introduction 2. Recent developments a. Low electrical dissipation b. Master-oscillator power-amplifier (MOPA) c. Dual color DFBs 3. Conclusion InP:Fe insulator Active InP region cladding 2
3 1. Introduction 2. Recent developments a. Low electrical dissipation b. Master-oscillator power-amplifier (MOPA) c. Dual color DFBs 3. Conclusion InP:Fe insulator Active InP region cladding 3
4 1.1 Interband vs. intersubband Interband (IB) Intersubband (ISB) Absorption above E = h Absorption at E = h Broad absorption features Narrow absorption features Long lifetime (>1 ns) Short lifetime (<1 ps) Very high radiative efficency Very low radiative efficiency Transition energy <->gap Transition energy <->QW thickness 4
5 1.1 What is a Quantum Cascade Laser * Mid-IR/THz emitting semiconductor laser (3 300 µm) Based on intersubband transitions l: tailorable by bandstructure engineering Cascade of optical transition regions * Faist et al., Science 264, 553 (1994) 5
6 1.2 Motivation Spectroscopy of different molecules: 6
7 transmittance 1.2 Motivation Spectroscopy of different molecules: 10% N 2 O, 0.5 cm, 296 K, 1013 mbar 7
8 transmittance 1.2 Motivation Spectroscopy of different molecules: 10% N 2 O, 0.5 cm, 296 K, 1013 mbar asymetric (2335 cm -1 ) bending (670 cm -1 ) 100 ppm CO 2, 35 cm, 296 K, 1013 mbar 8
9 1.3 Properties Key properties for detection systems: i. 9
10 1.3 Properties Key properties for detection systems: i. 10
11 1.3 Properties Key properties for detection systems: i. single-mode device mode-selection 11
12 1.3 Properties Key properties for detection systems: i. single-mode device mode-selection ii.a tunability 12
13 1.3 Properties Key properties for detection systems: i. single-mode device mode-selection ii.a tunability ii.b low el. dissipation 13
14 1.3 Properties Key properties for detection systems: i. single-mode device mode-selection ii.a tunability ii.b low el. dissipation ii.c high power 14
15 1.3 Properties Key properties for detection systems: i. single-mode device mode-selection ii.a tunability ii.b low el. dissipation ii.c high power ii.d multicolor 15
16 1.3 Properties Key properties for detection systems: i. single-mode device mode-selection ii.a tunability ii.b low el. dissipation ii.c high power ii.d multicolor 16
17 1.4 Mode control in semiconductor-based lasers Fabry-Pérot devices broad spectral emission wavelength (µm) 4,75 4,70 4,65 4,60 1,0 0,9 FP - 1% dc norm. intensity (arb. units) 0,8 0,7 0,6 0,5 0,4 0,3 0,2 0,1 0, wavenumbers (cm -1 ) 17
18 1.4 Mode control in semiconductor-based lasers Fabry-Pérot devices broad spectral emission 1,1 1,0 wavelength (µm) 4,6825 4,6800 4,6775 4,6750 4,6725 4,6700 FP - 1% dc 0,9 norm. intensity (arb. units) 0,8 0,7 0,6 0,5 0,4 0,3 0,2 0,1 0, wavenumbers (cm -1 ) 18
19 1.4 Mode control in semiconductor-based lasers Fabry-Pérot devices broad spectral emission 1,1 1,0 0,9 wavelength (µm) 4,6825 4,6800 4,6775 4,6750 4,6725 4,6700 FP - 1% dc DFB - CW norm. intensity (arb. units) 0,8 0,7 0,6 0,5 0,4 0,3 0,2 0,1 0, wavenumbers (cm -1 ) 19
20 1.4 Mode control in semiconductor-based lasers 1,1 1,0 0,9 Fabry-Pérot devices broad spectral emission wavelength (µm) 4,6825 4,6800 4,6775 4,6750 4,6725 4,6700 FP - 1% dc DFB - CW DFB devices single-mode emission Sideview (SEM) norm. intensity (arb. units) 0,8 0,7 0,6 0,5 0,4 0,3 0,2 0,1 0, wavenumbers (cm -1 ) 20
21 1.4 Mode control in semiconductor-based lasers 1,1 1,0 0,9 Fabry-Pérot devices broad spectral emission wavelength (µm) 4,6825 4,6800 4,6775 4,6750 4,6725 4,6700 FP - 1% dc DFB - CW DFB devices single-mode emission Sideview (SEM) norm. intensity (arb. units) 0,8 0,7 0,6 0,5 0,4 0,3 0,2 0,1 0, wavenumbers (cm -1 ) 21
22 1.5 Distributed feedback gratings DFB-QCL: different orders N, N λ 2 = n eff Λ 1st order 2nd order 3rd order J. Faist et al., APL 70 (1997) D. Hofstetter et al., PTL 12 (2000) Q. Lu et al., APL 98 (2011) B. Hinkov et al., El. Lett. 48 (2012) D. Hofstetter et al., APL 75 (1999) S. Kumar et al., Opt. Express (2007) E. Mujagic et al., APL 93 (2008) M. I. Amanti et al., Nature Photon. 3 (2009) J. P. Commin et al., APL 97 (2010) 22
23 1.6 External cavity systems Main components QCL Collimating lens Diffraction grating Littrow configuration Bragg condition tuning Front/back extraction 23
24 1.7 Singlemode emission Key properties for detection systems: i. single-mode device mode-selection ii.a ii.b ii.c ii.d low el. dissipation high power multicolor tunability 24
25 1.3 Properties Key properties for detection systems: i. single-mode device mode-selection ii.a tunability ii.b low el. dissipation ii.c high power ii.d multicolor 25
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33 1.8 Performance-discussion of QC lasers As expected for a layered semiconductor media: G th, > G th,, growth direction G th, G th, Typically G th, / G th, = 3.3* *A. Lops et al., J. Appl. Phys. 100 (2006) 33
34 1.8 Performance-discussion of QC lasers As expected for a layered semiconductor media: G th, > G th,, T max = 385K T max = 362K growth direction G th, T max = 358K T max = 341K G th, Typically G th, / G th, = 3.3* *A. Lops et al., J. Appl. Phys. 100 (2006) A. Wittman, PhD thesis 18363, ETHZ (2009) 34
35 1. Introduction 2. Recent developments a. Low electrical dissipation b. Master-oscillator power-amplifier (MOPA) c. Dual color DFBs 3. Conclusion InP:Fe insulator Active InP region cladding 35
36 2. Recent developments: Widely tunable devices (ext. cavity): A. Hugi et al., Semicond. Sci. Technol. 25, (2010) 36
37 2. Recent developments: Widely tunable devices (ext. cavity): Pulsed operation: 432 cm -1 tuning (7.5mm 11.4mm) 1 W peak power A. Hugi et al., Appl. Phys. Lett. 95, (2009) A. Hugi et al., Semicond. Sci. Technol. 25, (2010) 37
38 2. Recent developments: Widely tunable DFBs Sampled DFB gratings Two different grating periods l ~ 4.8 µm 50 cm -1 gap-free tuning 100 mw CW power S. Slivken et al., Appl. Phys. Lett. 100 (2012) 38
39 2. Recent developments: Widely tunable DFBs Sampled DFB gratings Two different grating periods l ~ 4.8 µm 50 cm -1 gap-free tuning 100 mw CW power S. Slivken et al., Appl. Phys. Lett. 100 (2012) l ~ 8.5 µm 63 cm -1 tuning mw peak power T. Mansuripur et al., Opt. Express 20 (2012) 39
40 1. Introduction 2. Recent developments a. Low electrical dissipation b. Master-oscillator power-amplifier (MOPA) c. Dual color DFBs 3. Conclusion InP:Fe insulator Active InP region cladding 40
41 2. Recent developments: a. Low electrical dissipation 1.5 cm g 41
42 2. Recent developments: a. Low electrical dissipation P th,diss ~ 1.5 W, P diss,max ~ 5 W 1.5 cm g Wittmann et al., Photon. Technol. Lett. 21 (2009) 42
43 2. Recent developments: a. Low electrical dissipation P th,diss ~ 1.5 W, P diss,max ~ 5 W 1.5 cm g Wittmann et al., Photon. Technol. Lett. 21 (2009) P th,diss ~ 1.1 W, P diss,max > 1.6 W R. Cendejas et al., Photon. J. 3 (2011) 43
44 2. Recent developments: a. Low electrical dissipation P th,diss ~ 1.5 W, P diss,max ~ 5 W 1.5 cm g Wittmann et al., Photon. Technol. Lett. 21 (2009) P th,diss ~ 1.1 W, P diss,max > 1.6 W P th,diss ~ 0.7 W, P diss,max ~ 2.4 W R. Cendejas et al., Photon. J. 3 (2011) F. Xie et al., J. selected topics in Quantum. Electron. 18 (2012) 44
45 2. Recent developments: a. Low electrical dissipation P th,diss ~ 1.5 W, P diss,max ~ 5 W 1.5 cm g Wittmann et al., Photon. Technol. Lett. 21 (2009) P th,diss ~ 1.1 W, P diss,max > 1.6 W P th,diss ~ 0.7 W, P diss,max ~ 2.4 W P th,diss ~ 0.7 W, P diss,max ~ 1.4 W R. Cendejas et al., Photon. J. 3 (2011) F. Xie et al., J. selected topics in Quantum. Electron. 18 (2012) B. Hinkov et al., El. Lett. 48 (2012) 45
46 2a. Low dissipation AR design MBE: 35 x In Ga As / Al In As on InP substrate ~ 6 µm 46
47 2a. Low dissipation AR design MBE: 35 x In Ga As / Al In As on InP substrate Genetic algorithm for optimized AR-design ~ 6 µm 47
48 2a. Low dissipation AR design MBE: 35 x In Ga As / Al In As on InP substrate Genetic algorithm for optimized AR-design Wallplug efficiency as merit function ~ 6 µm 48
49 2a. Low dissipation AR design MBE: 35 x In Ga As / Al In As on InP substrate Genetic algorithm for optimized AR-design Wallplug efficiency as merit function ~ 6 µm A. Bismuto et al., Appl. Phys. Lett. 101 (2012) 49
50 2a. Low dissipation AR design MBE: 35 x In Ga As / Al In As on InP substrate Genetic algorithm for optimized AR-design Wallplug efficiency as merit function ~ 6 µm A. Bismuto et al., Appl. Phys. Lett. 101 (2012) 50
51 2a. Reduce the electrical dissipation: Buried heterostructure: better thermal management reduced laser threshold Frontview (SEM) Insulating InP Insulating InP ~ 3 µm ~ 3 µm 51
52 2a. Reduce the electrical dissipation: Buried heterostructure: better thermal management reduced laser threshold Small devices: (2.5-5 µm x < 2 mm) short : less current consumption strong gratings Frontview (SEM) Insulating InP Insulating InP ~ 3 µm ~ 3 µm A 0nLpl(2g 32) Ith tot q0n q z eff 0 32 therm 52
53 2a. Reduce the electrical dissipation: Buried heterostructure: better thermal management reduced laser threshold Small devices: (2.5-5 µm x < 2 mm) short : less current consumption strong gratings narrow: lat. mode suppression heat-extraction Frontview (SEM) Insulating InP ~ 3 µm ~ 3 µm Insulating InP A 0nLpl(2g 32) Ith tot q0n q z eff 0 32 therm 53
54 2a. Reduce the electrical dissipation: Buried heterostructure: better thermal management reduced laser threshold Small devices: (2.5-5 µm x < 2 mm) short : less current consumption strong gratings narrow: lat. mode suppression heat-extraction Frontview (SEM) Insulating InP ~ 3 µm ~ 3 µm Insulating InP A 0nLpl(2g 32) Ith tot q0n q z eff 0 32 therm 54
55 2a. Reduce the electrical dissipation: Buried heterostructure: better thermal management reduced laser threshold Small devices: (2.5-5 µm x < 2 mm) short : less current consumption strong gratings narrow: lat. mode suppression heat-extraction Frontview (SEM) Insulating InP ~ 3 µm ~ 3 µm Insulating InP A 0nLpl(2g 32) Ith tot q0n q z eff 0 32 therm 55
56 2a. Reduce the electrical dissipation: Low AR-doping: 6.7x10 10 cm -2 Target values: P opt > 5 mw, el. power < 1.5 W, (CW, RT) 56
57 2a. Reduce the electrical dissipation: Low AR-doping: 6.7x10 10 cm -2 Target values: P opt > 5 mw, el. power < 1.5 W, (CW, RT) P th, diss = mw P opt > 5 mw up to ~313 K B. Hinkov et al., El. Lett. 48 (2012) 57
58 2a. Reduce the electrical dissipation: Low AR-doping: 6.7x10 10 cm -2 Target values: P opt > 5 mw, el. power < 1.5 W, (CW, RT) P th, diss = mw P opt > 5 mw up to ~313 K B. Hinkov et al., El. Lett. 48 (2012) High T 0 = 245 K (interband lasers typically ~ 55K * ) * W. W. Bewley et al., Opt. Express 20 (2012) 58
59 2a. Reduce the electrical dissipation: Low AR-doping: 6.7x10 10 cm -2 Target values: P opt > 5 mw, el. power < 1.5 W, (CW, RT) P th, diss = mw P opt > 5 mw up to ~313 K P opt > 25 mw (323 K) h wallplug ~ 4% B. Hinkov et al., El. Lett. 48 (2012) 59
60 2a. Results II: spectra and tunability Temp.: F I X E D P O W E R B. Hinkov et al., El. Lett. 48 (2012) 60
61 2a. Results II: spectra and tunability Temp.: Power: Freitag, 9. August F I X E D P O W E R F I X E D T E M P E R A T U R E B. Hinkov et al., El. Lett. 48 (2012) B. Hinkov / IQE Faist / TDLS Moscow (2013)
62 2a. Results II: spectra and tunability Temp.: Power: Single-mode + mode hop free tuning (SMSR >27 db) Freitag, 9. August F I X E D P O W E R F I X E D T E M P E R A T U R E B. Hinkov / IQE Faist / TDLS Moscow (2013)
63 2a. Results III: Thermal conductivity * W 1 1 Gth T A *Beck et al., Science 295, 301 (2002) A T P W T Temp 1 Power 1 G th ~ 1200 W/K cm 2 therm. conduction: ratio of direct heating & current-heating very high G th (junction-up!) junction-down (G th ~ 50% higher) lower power-tuning! 63
64 1. Introduction 2. Recent developments a. Low electrical dissipation b. Master-oscillator power-amplifier (MOPA) c. Dual color DFBs 3. Conclusion InP:Fe insulator Active InP region cladding 64
65 2. Recent developments: b. High optical output power 65
66 2. Recent developments: b. High optical output power CW: P opt = 2.4 W h max = 10% P diss = 20 W Q. Y. Lu et al., Appl. Phys. Lett. 98 (2011) 66
67 2. Recent developments: b. High optical output power CW: Pulsed: P opt = 2.4 W h max = 10% P diss = 20 W P opt = 2.7 W 10 W array of tapered DFBs duty cycle: 0.025% Q. Y. Lu et al., Appl. Phys. Lett. 98 (2011) P. Rauter et al., Opt. Express 21 (2013) 67
68 2. Recent developments: b. High optical output power CW: Pulsed: P opt = 2.4 W h max = 10% P diss = 20 W P opt = 2.7 W 10 W array of tapered DFBs duty cycle: 0.025% P opt = 1 W Narrow (~4 µm) single-emitters duty cycle: 1% Q. Y. Lu et al., Appl. Phys. Lett. 98 (2011) P. Rauter et al., Opt. Express 21 (2013) B. Hinkov et al., unpublished 68
69 2b. How to increase the DFB output power 1 st approach: scale up the length of a DFB device Surface DFB grating (complex coupling) lifts degeneracy (0.4 cm -1 discrimination) κ = 1 Λ Δn n eff k ~ 1.37 cm -1 But weak coupling k needed, very susceptible to defects Q. Y. Lu et al., Appl. Phys. Lett. 98 (2011) 69
70 2b. MOPA * *M. Troccoli et al., APL 80 (2002) Alternative: two sectional device heatsink DFB DFB: singlemode seed FP: amplifier section FP AR-coating: AR-coating a. suppress FP-selflasing & additional FP-modes within stopband b. suppress spatial hole burning in the FP-section B. Hinkov et al., under review 70
71 2b. MOPA vs. DFB A. DFB: 5.25 mm, k ~ 1.4 cm -1 Mode-discrimination: bi-mode 0.14 cm -1 (FP-level) 0.1 cm -1 (non-stopband mode) B. MOPA: 5.25 mm (1.25 mm DFB), k ~ 35 cm -1 Mode-discrimination: 2.8 cm -1 (FP-level) 1.6 cm -1 (non-stopband mode) > 1 order of magnitude higher B. Hinkov et al., under review 71
72 2b. MOPA vs. DFB Spectral coverage depends on: g DFB (λ) α DFB > g(λ max) α FP DFB: g DFB (λ) g(λ max ) > 0.94 MOPA: g DFB (λ) g(λ max ) > 0.49 B. Hinkov et al., under review Courtesy of S. Riedi 72
73 2b. MOPA vs. DFB Spectral coverage depends on: g DFB (λ) α DFB > g(λ max) α FP DFB: g DFB (λ) g(λ max ) > 0.94 MOPA: g DFB (λ) g(λ max ) > 0.49 B. Hinkov et al., under review Courtesy of S. Riedi 73
74 2b. MOPA Non-tapered device, 4 µm x (1.25+4) mm + AR-coating P opt,peak = 1 W (1% duty cycle) Continuous tuning (263K - 313K) symm. farfield TM 00 : FWHM (25 / 27 ) B. Hinkov et al., under review 74
75 1. Introduction 2. Recent developments a. Low electrical dissipation b. Master-oscillator power-amplifier (MOPA) c. Dual color DFB 3. Conclusion InP:Fe insulator Active InP region cladding 75
76 2. Recent developments: c. Dual color l ~ 5.2 & 8 µm Simultaneous emission C. Gmachl et al., APL 79 (2001) 76
77 2. Recent developments: c. Dual color l ~ 5.2 & 8 µm Simultaneous emission C. Gmachl et al., APL 79 (2001) 2 electrically separated DFBs l can be adressed individually or in parallel P. Jouy et al., unpublished 77
78 5.1 Dual color DFBs - concept Dual single-wavelength emitting devices (l/4-shifted) Detection of two different species from one optical waveguide Species can be separated by very different wavelengths InP:Fe insulator Active InP region cladding 78
79 5.2 Dual color DFBs - results Two color active region: 1600 cm -1 (NO 2 ) & 1900 cm -1 (NO) 2 electrically separated sections Both wavelengths can be addressed individually or in parallel 300 cm -1 separation 79
80 1. Introduction 2. Recent developments a. Low electrical dissipation b. Master-oscillator power-amplifier (MOPA) c. Dual color DFBs 3. Conclusion InP:Fe insulator Active InP region cladding 80
81 6. Conclusion: Overview of recent developments in DFB QC lasers (tunability, el. dissipation, high output power, dual-wavelength) 3 examples in more detail: 1. low dissipation DFB QCL (< 1W, P opt,cw >> 10 mw) 2. MOPA QCL (new design, P opt,peak ~ 1W untapered) 3. Dual-color DFB QCL (selective dual-l, 300 cm -1 separation) 81
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