Local changes of work function near rough features on Cu surfaces operated under high external electric field
|
|
- Samson Cobb
- 5 years ago
- Views:
Transcription
1 Local changes of work function near rough features on Cu surfaces operated under high external electric field Flyura Djurabekova, 1, a) Avaz Ruzibaev, 1 Eero Holmström, 2, 3 Stefan Parviainen, 1 and Mikko Hakala 2 1) Helsinki Institute of Physics and Department of Physics, P.O. Box 43, FI University of Helsinki, Finland 2) Department of Physics, University of Helsinki, P.O. Box 64, FIN University of Helsinki, Finland 3) Department of Earth Sciences Faculty of Maths&Physical Sciences, UCL Earth Sciences, Gower Street London WC1E 6BT, UK (Dated: 10 January 2014) Metal surfaces operated under high electric fields produce sparks even if they are held in ultra high vacuum. In spite of extensive research on the topic of vacuum arcs, the mystery of vacuum arc origin still remains unresolved. The indications that the sparking rates depend on the material motivate the research on surface response to extremely high external electric fields. In the present work by means of density-functional theory calculations we analyze the redistribution of electron density on {100} Cu surfaces due to self-adatoms and in presence of high electric fields from -1 V/nm up to -2 V/nm (-1 to -2 GV/m, respectively). We also calculate the partial charge induced by the external field on a single adatom and a cluster of two adatoms in order to obtain reliable information on charge redistribution on surface atoms, which can serve as a benchmarking quantity for the assessment of the electric field effects on metal surfaces by means of molecular dynamics simulations. Furthermore, we investigate the modifications of work function around rough surface features, such as step edges and self-adatoms. PACS numbers: Mg,52.80.Vp,79.20.Rf,61.80.Jh Keywords: work function, Cu surface, high electric fields, DFT. I. INTRODUCTION The performance of accelerating radio-frequency (rf) cavities in linear colliders (for instance, the Compact Linear Collider (CLIC) under development at CERN 1 ) is limited by a critical value of the accelerating gradient of the applied rf field. If the applied field is higher than the critical value, the frequency of sparking events near metal surfaces of accelerating structures becomes intolerable because of the surface damage and the loss of particle bunches. This field limit, however, was found to have strong a surface material dependence, which shifts this problem from the domain of plasma physics to the real of materials science. If the surface is operated at an electrostatic (direct current dc) field, it also starts producing sparks even in the deep vacuum, when the value of the field is of order of hundreds of MV/m 2. In the present work we focus on understanding the mechanisms underlying the electric breakdowns believing that the insight gained in our studies will also be a significant step towards the understanding of mechanisms of more complex breakdown phenomenon observed near conductive surfaces in presence of rf fields. In practice, metal surfaces remain fairly rough even after thorough polishing, at least, on a nanoscale. Such rough features cause uneven redistribution of electron a) Electronic mail: flyura.djurabekova@helsinki.fi density shaping the potential energy wells and barriers near the surface defects even in the absence of an external field. Switching on the field affects the potential landscape, deepening or shallowing the potential minima and barriers. This will affect the surface diffusion of atoms, which might lead among the others to the formation of sharp tips on the surface. This is why, a clear understanding of charge redistribution on surface rough features is one of the most important steps to enable the prediction of surface evolution in the presence of high electric fields. On the other hand, there is a strong assumption of field emitters surface protrusions formed and destroyed under an external electric field 3. The magnitude of measured field emission current densities escaping from such protrusions as a function of the applied field j F E (E) presumes that the protrusions must be of extremely high aspect ratio (at least, β 100) 4. The credibility of such assumptions has been long debated 5, since no significantly elongated protrusions were experimentally observed so far. Since the dependence j F E (E) is conventionally considered within the classical Fowler-Nordheim theory 6, a strong effect of work function modification on the value of j F E (E) can also be expected. In the present work we aim to estimate the effect of local modification of the work function near point defects and step edges, which can be extrapolated to the larger surface defects. Conventional techniques to measure work functions, such as photon spectroscopy and thermionic emission 7,8, can give the work function value of a metal surface over
2 2 relatively large areas, which can contain the surface of different crystallites and number of different surface imperfections. In many cases this level of accuracy suffices the demands of industrial applications, however, the present-day miniaturization of electric devices up to the nanoscale embosses the need for higher precision of definition for the work function values. If the metal surface is operated in extreme conditions (for example, very high electric fields as in CLIC-related experiments), even slight local changes in the work function can be critical for the quality of machine performance. Recently, thanks to the latest developments of scanning tunneling microscopy (STM) 9,10, accurate experimental observations of local changes in work functions of solid surfaces caused by surface roughness and high electric fields became possible 11,12. These observations encourage us to investigate the local changes of electron density on rough features, which define the local changes of work function. The latter in turn can be strongly connected to the formation of individual field emitters expected to form on cathode surfaces at high electric fields 2,13. In this study we used the density functional theory (DFT) approach, which was successfully employed previously by other authors to calculate the work function modification due to molecules of surface contaminants However, in some demanding applications it is of great importance to know how the work function is modified due to intrinsic surface defects like self-adatoms and step edges, which will contribute in the re-arrangement of the surface topology under the electric field as well as contribute in explanation of a sudden rise of field emission currents on seemingly flat metal surfaces. Moreover, in ultra high vacuum (UHV) and in the presence of high electric fields the contaminant layer becomes insignificant after a short operation time. In spite of the fact that DFT methods are highly accurate and allow for account of effects of external electric fields, the simulation of an evolving extended surface with the number of different defects by using these methods is not yet feasible. However, it is essential to investigate the surface evolution in the presence of external electric fields, in order to pin the process, explaining the existence of individual field emitters. The most suitable contemporary technique for such study is molecular dynamics (MD). This technique, however, does not include electric field effects implicitly, since the electronic structure of atoms is not taken into consideration directly. We have recently attempted to introduce the electric field effect on a metal surface in MD simulations based on laws of classical electrodynamics (ED&MD code). The algorithm and the detailed description of the employed approach can be found in 22. This code assigns the partial charges to surface atoms estimated from the Gauss law in the limit of a small pillbox-shaped conductive surface with the surface charge density defined by an applied external field. Electric forces acting on the charged atoms, hence, are introduced into the classical MD algorithm. In this manner we can follow the dynamic evolution of the surface held under high electric fields. Since the verification of this approach against experiment is difficult, the calculations, which can take into account the electronic structure of atoms, can serve as a compromising benchmarking routine. In present work we report the values of the charges on the surface atoms for three cases: (i) flat surface, (ii) adatoms, and (iii) step edges. We also calculate the change of the work function of the surface in the corresponding cases, both in the absence of an external electric field and in its presence. In the Sect. II A and II B we discuss at first the features of the DFT method used in the present work, and then, we report and discuss the modification of surface properties (work function) due to single self-adatoms and step edges for Cu {100} obtained in the absence and in the presence of external electric field. II. COMPUTATIONAL METHODS In the present work we investigate properties of the surfaces with geometric imperfections using the Spanish Initiative for Electronic Structure with Thousands of Atoms (SIESTA) ab initio simulation package with the linear combination of atomic orbitals (LCAO) type basis functions and norm conserving pseudopotentials. For the exchange and correlation functionals we use the Perdew, Burke & Ernzerhof (PBE) scheme of Generalized gradient approximation (GGA) 26. In our study we favor SIESTA over the plane-wave DFT codes, since the LCAO basis sets allow the electron density to decrease naturally to zero in the vacuum; it is also featured by the well implemented models concerning the band offsets theory As do the majority of DFT codes SIESTA also uses the concept of nonlocal pseudopotentials developed by Kleinman and Bylander 30 and optimal mesh theories for integrals in real- and reciprocal-space as in 31. We model a Cu {100} surface by constructing supercells with 64, 192 and 256 atoms (all organized in eight atomic layer slabs according to the geometry along the <100> direction of the fcc structure z axis in our calculations) and a corresponding vacuum gap of the same size as the slab above the {100} surface. In the lateral directions (x and y axes) the slab is infinitely replicated via periodic boundaries. The periodic boundaries in the direction normal to the surface (z axis) leads to the infinite alternating of the slab and the vacuum gap. The atom positions in the entire slab are relaxed by using the conjugate gradient technique. Before performing the actual calculations we carried out convergence tests for the total energy and the lattice constant for bulk Cu. We found that the choices of energy cutoff of 265 Ry for all supercells and k-grid cutoff 2, 2 and 0.8 nm for the supercells 64, 192 and 256, respectively, were sufficient. The lattice constant and cohesive energy, were found to be in a good agreement (within 1% precision) with the
3 3 experimental values from32. However, the equilibrium lattice constant was found to increase by about nm upon the increase of the number of atoms from 64 to 256 in the slab. For all atoms we used the split type basis set with double ξ size for the wave functions. In the vacuum gap we also applied the surface dipole correction33 option, available in SIESTA23. The problem of fast decay of localized atomic orbitals from surface to vacuum is usually handled by either expanding the basis wave functions of surface atoms or by adding floating orbitals above the surface atoms in the vacuum region. It was shown in34 that addition of a shell of diffuse orbitals with cutoff radius 7-9 bohr in surface layer for Cu provides the best computational efficiency and sufficient accuracy for calculation of the work function value compared to the method of additional floating orbitals. This motivated our choice of adding the diffuse 5s orbitals with cutoff 9 bohr to all the surface atoms. We have calculated the local electronic charge distribution using the Mulliken charge density distribution analysis available in SIESTA35. Since SIESTA is based on the pseudopotential method, the electron density in the code includes information only on valence electrons. Moreover, constructing the surface with the finite vacuum gap results in some modification of electron density of the surface atoms as well. This is why in our simulations we follow only the relative change in charges per atom on the surface by comparing the calculated electron density on the corresponding atoms before and after the modification on the surface was made. The geometry applied in our calculations is illustrated in Fig.1a. The direction of the z axis is from the bottom of the slab to the vacuum, perpendicular to the surface. The value z = 0 is the coordinate of the atoms at the bottom layer of the slab before the surface was opened and relaxed. The slab (8 atomic layers) is terminated by the surface atoms, where the study was focused. The thickness of the vacuum gap equals to the four lattice parameters of the bulk Cu. While studying surfaces with adatoms, we have at first evaluated the values of surface and surface binding energies for the four-fold hollow adatom site (C1 ) and the bridging site C2, which are two possible adatom positions on the otherwise perfect {100} Cu surface (Fig. 1b). The obtained value of surface energy for the flat surface 2.13 J 36 m2 compares well to the value reported in. The slight difference can be explained by relaxation effects37. The surface binding energy for the adatom in C1 site has resulted in the value 2.68 ev, while in the site C2 it was only ev. The notably lower binding energy of an adatom in the C2 site allows for the focus of the study only on the C1 site as a stable site for an adatom on {100} Cu surface. The step edge defect on the surface was modelled as follows. We have used the 192 atoms slab with the surface consisting of 12 atoms: two rows of 6 atoms each (See Fig. 1c). We chose an elongated geometry of the slab to reduce the effect of periodic boundaries on the FIG. 1. Geometry used in the present calculations. a) A supercell of 64 atoms consists of a metal slab and a vacuum gap, equally thick. The z axis starts at the bottom of the metal slab. z = 0 is the z-coordinate of the bottom layer of the Cu slab before the surface was opened and relaxed. b) Positions of adatoms: C1 refers to the four-fold hollow fcc site; C2 is a bridging site. c) Step edge defect on the Cu (100) surface. For computational efficiency the slab is two layers thick in the x direction. surface in the direction perpendicular to the step edges. Six extra atom on the surface filled in the half of a surface layer forming a desired step edge defect in the < 100 > direction. For the calculations of work function and band offsets we use the method of profiling average electrostatic potential. This method was earlier developed in Refs.27,38 40 and further implemented for DFT calculations in Ref.29. Conventionally, the calculation of work functions of different materials had been done by using codes with plane wave basis functions such as VASP due to their straightforward output for electrostatic potential in all regions, while the calculations with local basis sets have dependence on the atomic basis functions41 and demand correct definition of potential in vacuum region. However, the latter can be useful for a more clear insight on intermediate macroscopic physical quantities involved in calculations, such as work function and charge density, assisting the interpretation of experimental results and bridging the phenomenological and fundamental descriptions of physical processes.
4 4 Averaged potential [ev] <V H > (flat surface) <V NA > (flat surface) <V H > (adatom) <V H > * (adatom) z [Bohr] FIG. 2. Distributions of the mean electrostatic V H (z) and neutral atom V NA (z) potentials for the supercells consisting of 64 Cu atoms for both cases of the flat surface and the surface with one adatom. V H indicates that the result is obtained with the surface dipole correction. The V H and V NA for flat surface are given after averaging by using the macroscopic averaging utility 42 in SIESTA code to indicate the potential mean values in the middle of the slab and in the vacuum region. Both curves V H for the adatom are given only after planar averaging to emphasize the potential difference due to the adatom added on the surface. Hartree potential in the undistorted bulk and, hence, all the eigenvalues of the one-particle Hamiltonian, as well as the Fermi level, are referred to it. In Fig. 2 we plot the distributions of the Hartree electrostatic and the neutral atom potentials, for the supercell comprising 64 atoms and the vacuum gap along the z axis. As it can be seen, the mean value of the Hartree potential in the middle of the slab differs significantly from that of the neutral atom potential due to the presence of the surface. When there is no surface both potentials coincide precisely. Since the formation of the surface does not affect the neutral atom potential inside of the slab, the mean value of this potential can be adopted as the reference level in SIESTA calculations 29. The mean Hartree potential Vi+e H can be re-written in two parts, separating the potential generated by the distorted electron density δve H. V H i+e = V NA i+e + δv H e (1) Since we have two well distinguished regions the slab and the vacuum the lineup term for all energy levels can be found as the difference between δve H in the vacuum and inside the slab, similarly to the case of an interface. Having in mind that Vi+e NA = 0 in vacuum, we write, A. Definition of vacuum level in SIESTA in the presence of surface The detailed description of the computational model realized in the SIESTA code is available elsewhere (see, e.g., 24,29 ). In this article we will revise, however, some of the considerations, which are of importance for our present calculations. The work function of any metal surface is calculated as the difference of the Fermi level and the vacuum level 7. These energy levels can be found by using a DFT code. In SIESTA, however, special attention must be paid to the definition of vacuum level, which is output in the SIESTA code with respect to the specific SIESTA zero-energy reference 29. The Hartree electrostatic potential V H ( r) a standard output of SIESTA is generated by electron density. The latter, in turn, consists of two independent parts ρ e ( r) = ρ atom e ( r) + δρ( r), where ρ atom e ( r) is the sum of the valence electron density localized on atoms in the undistorted bulk ρ atom e ( r) = N at k=1 ρatom e,k and δρ( r) is the distorted electron density due to the formation of surface. SIESTA combines the potential V H ( r) generated by the localized electron density with the local part of the pseudopotential V loc ( r) and outputs the so-called neutral atom potential, N at Vi+e NA = (Vi,k loc k=1 + V H,loc e,k ) which is needed to define the zero-energy reference. In SIESTA the latter is attributed to the mean value of the δve H = Vi+e NA slab + Vi+e H (2) where, Vi+e H = V i+e H vac Vi+e H slab. Since the lineup term is found as the difference of the distorted part of the mean Hartree potential in the vacuum and in the slab due to the flow out of electrons from the surface, it is, in fact, the surface barrier, which also defines the vacuum level. Assuming that the energy level inside the slab is zero, we can define the vacuum level as E vac = E 0 + δv H e (3) For the consistency we have to shift the Fermi level outputted in SIESTA, Ef SIEST A, also to the zero-energy level, from the reference level used in SIESTA at the mean total Hartree potential calculated for the bulk V H bulk or the V NA slab. We calculated the Fermi level for three different supercells with 64, 256 and 192 atoms. Again, for consistency, to avoid the dependence on the geometry of supercells, we define the Fermi level for all three cases with respect to E 0 = 0 ev. E f = E SIEST A f V NA slab (4) In this manner we obtain the consistent value of the Fermi level for all the three different supercells with 64, 256 and 192 atoms used in the present calculations, which is E f = 1.97 ± 0.01 ev.
5 5 Φ GGA (our calc.) 3.51 (4.898 ) Values obtained with different vacuum model parameters. The value was obtained for the surface with 8 atoms. A minor variation of this Φ LDA 41 Φ exp 46 parameter was observed due to relaxation of the lattice (the values 4.72 and 4.71 ev were obtained for surfaces with 32 atoms and 24 atoms, respectively.) TABLE I. Comparison of the work function values of Cu (100) surface (Φ, [ev]), calculated in the current work with SIESTA using GGA exchange and correlation term, LDA from 41 and experimental data 46. B. Calculation of work function near rough surface features Previous DFT calculations have shown that the work function is strongly related to the exchange part of total energy 43,44. In particular, the modification of work function relates to changes in the surface dipole barrier 44,45, whose value in metals is defined by the surface structure and by the presence of surface imperfections such as adatoms or step edges. Since the work function is understood as the minimal energy needed for an electron to be released into vacuum from the surface, it is found as the difference between the Fermi level and the value of electrostatic potential in the vacuum region 7. Using Eqs. (3) and (4) we find Φ = E vac E f = E 0 + δve H Ef SIEST A + V H bulk (5) Note that V H bulk is a Hartree potential calculated for the undistorted bulk, which, in practise, coincides with the neutral atom potential in the middle of the slab if the surface is present. When the system includes a surface irregularity such as an adatom or a step edge, the definition of vacuum level becomes less obvious. The potential difference on both sides of the slab due to the periodic boundaries gives a rise to an artificial electric field in the vacuum region. The surface dipole correction 33 available in SIESTA 23 allows to cancel out this field (Cf. Fig. 2, where both graphs with and without surface dipole correction are shown) and define clearly the vacuum level Vi+e H vac, which is used to determine δve H in Eq. 5 in case of the non-flat surfaces. III. RESULTS AND DISCUSSION A. Modification of work function due to adatoms and step edges The work function calculated for the flat {100} Cu surface is compared in Table I to the previous calculations from other theoretical studies 41 and the experimental value 46. Applying on surface atoms the additional diffuse orbitals for better description of long decay of the wave functions in vacuum, we obtained a value of the work function, which compares well with the experimental one 46. The same value is obtained consistently for all the calculated supercells within a small error bar (±0.03 ev, see text in the footnote of Table I. This gives us confidence that the obtained value of the work function of Cu {100} surface is sufficiently accurate to carry out the study of different effects, which can modify the value of work function. We perform such analysis in relative quantities. We analyze the modification of the work function due to adatoms and step edges on a Cu {100} surface. To estimate the local drop of the work function on an adatom compared to the value calculated for the flat surface, we calculate the work functions for the two supercells, which contain 64 and 256 atoms (8 and 32 atoms on the surface, respectively). The supercells are constructed in such a way that the only difference between them is the ratio of the surface areas (1:4). A single adatom on each surface is always positioned in the hollow fcc site C 1 (Fig. 1b). The results are presented in Table II in terms of relative drop of the work function (in %) compared to the value for the flat surface: Φ = (Φ flat Φ def ) Φ flat 100%, where Φ def stands for the work function of the surface with a defect (an adatom or a step edge) and Φ flat stands for the work function of the corresponding flat surface. The comparison of Φ found for the surfaces with an adatom (Table II) shows that the relative drop of the work function calculated for the bigger surface is about 4 times smaller than the one calculated for the surface with the smaller area. Since the work function is obtained as the averaged quantity over the entire surface of the slab as described in Section II B, the Φ parameter is expected to be 4 times smaller (following the surface area ratio) if the local change of the electrostatic potential near the adatom on the small surface is not affected by the periodic boundaries. The consistency of our result with this expectation confirms that the supercell with a surface layer comprising eight atoms is just sufficient for the calculation of the local drop Φ on an isolated adatom, since any smaller size of the supercell surface area will lead to the interaction of the adatoms via the periodic boundaries. This is why we can conclude that the found reduction of the work function calculated on the small (8 atoms) surface is very close to the local drop of the work function near the isolated adatom on the bigger (32 atoms) surface. In fact, the surface can be arbitrarily big. We also investigate the drop of the work function near the step edge (last column in Table II). For a better interpretation of the results we increase the dimension of the supercell perpendicular to the line of the step edge two times, making the calculations of this value for the supercell with 192 atoms. It is interesting to note that the drop of the work function on the step edge is also significant, however, it is apparent that the short-range bonding affects the value of the work function (6 nearest neighbors for the step edge atom versus 4 neighbors for
6 6 adatom (A small ) adatom (A large ) edge Φ 5.9% 1.5% 2.3% TABLE II. Modification of work function on the adatom in the hollow fcc lattice site and a step edge. A small/large indicate the small and large surfaces (A large /A small =4), respectively. By large surface we understand the surface less densely populated with adatoms. The numbers are relative change of the work function in per cent of the value of the work function calculated for the flat surface of the corresponding supercell. Averaged potential [ev] Flat surface (F ext =0) Flat surface Adatom on a small surface Adatom on a big surface the adatom), but does not define it entirely. B. Cu surface under high electric field In order to demonstrate the effect of electric field on the work function, which can be obtained from SIESTA calculations, we plot in Fig. 3 the combination of the four different cases: the flat surface without the external electric field (1) and three curves corresponding to the cases with the electric field F ext =-1 V/nm applied to the flat surface, the small surface with an adatom and the four times greater surface with one adatom. As can be clearly seen, there is a drop in the barrier (about 12% of the value of the work function without the field) near the surface due to the electric field (curves 1 and 2). The slope of the potential drop and hence, the thickness of the barrier, depends on the magnitude of the applied field. It is interesting to note that the presence of an adatom does not affect the height of the barrier, while it is affecting slightly the thickness of the barrier. This is important while interpreting the Fowler-Nordheim dependence of the current density on the value of the applied field, since in the derivation of the Fowler-Nordheim equation the geometric effects are taken into account only via the field enhancement. If the electric field is applied to the surface, the electron density is redistributed accordingly. Using the Mulliken analysis tool we calculate the partial charge induced on each surface atom based on the redistribution of electron density due to the external field. Employing the pillbox technique, we can apply the Gauss law 47 to estimate the surface charge density due to the external electric field in order to verify the current result. σ Gauss = ɛ 0 F n = qe /nm 2 (6) σ SIEST A = (q SA N SA )/A S = 0.12 q e /nm 2 (7) Here, F is the external electric field and n the normal unit vector directed outwards from the slab surface. q SA is the partial charge on surface atoms as calculated from SIESTA and N SA is the amount of atoms on the surface. A S refers to the surface area. The charges are measured in elementary charges q e z [Bohr] FIG. 3. Distribution of the electrostatic Hartree potential V H (z) in the presence of the electric field ( F ext = 1 V/nm) for the flat surface and two surfaces with one adatom. For comparison we also show the same distribution at the flat surface without an external electric field. The circle shows the slight decrease in the thickness of the barrier (a correspondence to the phenomenological Schottky-Nordheim barrier for flat surface) for electrons near the surface with an adatom. The smaller the area (a localized effect) the stronger the change in the barrier thickness. We see the good agreement between (6) and (7) only if we use in Eq.(6) the value of electric field, which corresponds to the resulting field in the SIESTA calculations and amounts to -2.1 V/nm (see the caption to Fig. 4, the first case). This feature of SIESTA code must be taken into account while studying the external electric field effects. The user-defined field is used in SIESTA to define the potential difference corresponding to the drop of potential over the entire size of the supercell at the beginning of calculations. This potential difference is introduced in the vacuum layer similarly to the use of the surface dipole correction mode and remains intact during the calculations. As a result of self-consistent calculations of electron density distribution in the presence of the external electric field, the internal field inside the slab due to the surface charges compensates the external field stabilizing the value of electrostatic potential within the slab. The fixed potential difference in the vacuum layer naturally leads to the increase of the field out of the slab, in the region above the surface, thus defining high value of the surface charge density. To verify this explanation we have performed similar calculations, but with different sizes of the vacuum region. The result presented in Fig. 4 reveals a slight decrease (see the caption to Fig. 4) of the high value of the field above the surface obtained for the supercell with the increasing vacuum region. The smallest vacuum gap is equal to the size of the metal slab. In the figure we used nanometers as dimensional units to facilitate the estimation of the magnitude of the slope of potential curve in the vacuum region. In the limit of infinitely large vac-
7 7 uum region, this slope will be very close to the input field, since the size of the metal slab, where the drop of potential is zero due to the surface charges, will be negligibly small compared to the size of the vacuum. Hence the metal slab will not affect the value of the field above the surface. In this limit the charges obtained on the metal surface will precisely correspond to the input electric field as expected from classical laws of electrodynamics. Averaged potential [ev] Vacuum region:1.46 nm Vacuum region: 1.83 nm Vacuum region: 2.19 nm z [nm] FIG. 4. Electrostatic potential V H (z) obtained for 3 different suppercells in the presence of input electric field F ext = 1 V/nm. These supercells comprise the same metal slab of four atomic layers and 8, 10 and 12 layers of vacuum region. The z-coordinate is given in nanometers for clarity to estimate the value of the field (the slopes in the vacuum region) in all cases. We obtain the slopes as -2.1±0.4, -1.9±0.4 and -1.7±0.4 ev/nm (divided by q e, the slope gives the value of the field) for all three cases, correspondingly. The value of the slope (thus actual resulting electric field defining the charges on the surfaces) strongly depends on the size of the vacuum region. The fluctuations in the vacuum region are left for eye guidance to indicate the size of the vacuum in each case. Previously we have attempted to estimate the partial charge induced on the surface atoms by the external electric field by developing the hybrid electrodynamicmolecular dynamic (ED&MD) approach 22. The atomic charges of order of fractions of an electron are dynamically modified following the change of the shape of the external electric field around the surface. This approach allows for the extension of MD algorithm and can be a valuable tool to simulate the evolution of metal surfaces held under high electric fields. However, the calculation of the charges is made based on the crude assumption of validity of the Gauss law on atomic level, while the shape of atoms is approximated as cuboids with the diagonal as large as the interatomic distance. In the present work we aim to validate our former approach by calculating the charges on adatoms due to the external field by applying the Mulliken charge distribution analysis tool on the calculated electron density and compare these results to the charges calculated by ED&MD code for the identical adatoms. This comparison is also summarized in Table III. We note that the feature of DFT calculations discussed in Single adatom Two adatoms DFT ED-MD DFT ED-MD Partial Charge,q e TABLE III. Comparison of fractions of unit charge on adatoms obtained by DFT and ED&MD 22 calculations for two cases of a single adatom and a cluster of two adatoms. Since the resulting electric field in SIESTA calculations near the conducting surface is twice as high as the input field (see the caption to Fig. 4 and the corresponding body text), we compare this value to the ED&MD results obtained by using the corresponding value of electric field ( F ED&MD =-2.1 V/nm). the previous paragraph is taken here into account by increasing the input field in ED&MD simulations to the corresponding value of the resulting field in SIESTA. As it is seen from the comparison, the obtained results are in satisfactory agreement. Some discrepancy is expected due to the nature of the approximations adopted in the ED&MD technique. IV. CONCLUSIONS In conclusion, we have studied the effect of electric field on the Cu surface by the DFT-GGA technique. To assess the behavior of the conducting surface under high electric field, we calculated the electron density from where we derived the change of work function due to the presence of an adatom as well as the charges accumulated on the adatoms due to the electron density transfer under high electric field. The satisfactory agreement with the estimation of the surface charge from the Gauss law for flat surfaces confirms the validity of the chosen technique. The change in the value of the work function indicates the strong influence of intrinsic defects on this parameter, which requires further investigation. Moreover, we were able to validate the approach which we developed previously for the dynamic simulation of the effect of electric field on extended metal surfaces. The calculation of the partial charge on the single adatom and the cluster of two adatoms agreed well with the ED&MD results, although the approaches applied in both calculations were fully independent. ACKNOWLEDGEMENTS We acknowledge financial support from the Academy of Finland MECBETH project. M.H. has been supported by the Research Funds of the University of Helsinki (No ). Grants of computer time from the Center for Scientific Computing in Espoo, Finland, are gratefully acknowledged. The authors acknowledge the useful discussions with Kai Nordlund on calculations of electric field effects by DFT methods.
8 8 1 The Compact Linear Collider Study, 2 S. Calatroni et al., Proceedings of 2010 LINAC conference (Joint Accelerator Conference Website, ). 3 A. Descoeudres, F. Djurabekova, and K. Nordlund, CLIC-Note 875, 1 (2010). 4 H. Timko et al., Contrib. Plasma Physics 51, 5 (2011). 5 A. Pohjonen et al., Jour. Appl. Phys. 110, (2011). 6 R. G. Forbes, Surface and Interface Analysis. 36, 395 (2004). 7 N. W. Ashcroft and N. D. Mermin, Solid State Physics, 2nd ed. (Saunders College, Philadelphia, 1976), p C. Kittel, Introduction to Solid State Physics, 4th ed. (John Wiley and Sons, The Edinburgh Building, Cambridge CB2 8RU, UK, 71). 9 S.-W. Hla, L. Bartels, G. Meyer, and K.-H. Rieder, Phys. Rev. Lett. 85, 2777 (2000). 10 J. R. Hahn and W. Ho, Phys. Rev. Letters 87, (2001). 11 S. Paavilainen and M. Persson, Phys. Rev. B 74, (2006). 12 J. A. Nieminen and S. Paavilainen, Surf. Sci. Lett. 405, L573 (1998). 13 M. Kildemo, S. Calatroni, and M. Taborelli, Phys. Rev. ST Accel. Beams 7, (2004). 14 A. Puisto et al., Catalysis Today 100, 403 (2005). 15 J. A. Lewis, V. M. Vinokur, J. Wagner, and D. Hinks, Phys. Rev. B. 52, R3852 (1995). 16 G. Pourtois et al., Microelectronic Engineering. 80, 272 (2005). 17 Y. He, X. Y. Wei, C. T. Chan, and J. G. Che, Phys. Rev. B 71, (2005). 18 M.-L. Bocquet, A. M. Rappe, and H.-L. Dai, Molec. Phys. 103, 883 (2005). 19 K. Doll, Phys. Rev. B 66, (2002). 20 L. R. C. Fonseca and A. A. Knizhnik, Phys. Rev. B 74, (2006). 21 E. Rauls, S. Blankenburg, and W. G. Schmidt, Surf. Sci. 602, 2170 (2008). 22 F. Djurabekova, S. Parviainen, A. Pohjonen, and K. Nordlund, Phys. Rev. E 83, (2011). 23 E. Artacho et al., SIESTA 3.1, User s guide, (ICMAB, Institut de Ciéncia de materials de Barcelona), J. M. Sole et al., Journal of Physics: Condens. Matter. 14, 2745 (2002). 25 P. Ordejón, E. Artacho, and J. M. Soler, Phys. Rev. B 53, R10441 (1996). 26 J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996). 27 A. Baldereschi, S. Baroni, and R. Resta, Phys. Rev. Lett. 61, 734 (1988). 28 L. Colombo, R. Resta, and S. Baroni, Phys. Rev. B 44, 5572 (1991). 29 J. Junquera, M. Zimmer, P. Ordejón, and P. Ghosez, Phys. Rev. B 67, (2003). 30 L. Kleinman and D. M. Bylander, Phys. Rev. Lett. 48, 1425 (1982). 31 J. Moreno and J. M. Soler, Phys. Rev. B. 45, (1992). 32 D. R. Lide, CRC Handbook of Chemistry and Physics, 82 ed. (CRC Press LLC, Boca Raton, FL, USA, 2001). 33 L. Bengtsson, Phys. Pev B 59, (1999). 34 S. García-Gil, A. García, N. Lorente, and P. Ordejón, Phys. Rev. B 79, (2009). 35 R. Mulliken, Journal of Chemical Physics 23, 1833 (1955). 36 L. Vitos, A. V. Ruban, H. L. Skriver, and J. Kollar, Surf. Sci. 411, 186 (1998). 37 P. J. Feibelman, Phys. Rev. B 46, 2532 (1992). 38 J. P. Perdew and V. Sahni, Solid State Commun. 30, 87 (1979). 39 L. Kleinman, Phys. Rev. B 24, 7412 (1981). 40 C. G. V. de Walle and R. M. Martin, Phys. Rev. B. 35, 8154 (1987). 41 K. Doll, Surface Science Letters. 600, L321 (2006). 42 J. Junquera, M. H. Cohen, and K. M. Rabe, J. Phys. Cond. Matt. 19, 1 (2007). 43 J. R. Smith, Phys. Rev. 181, 522 (1969). 44 N. D. Lang and W. Kohn, Phys. Rev. B. 3, 1215 (1971). 45 T. C. Leung et al., Phys. Rev. B 68, (2003). 46 H. B. Michaelson, Jour. Appl. Phys. 48, 4729 (1977). 47 J. D. Jackson, Classical electrodynamics, 2nd ed. (John Wiley & Sons, New York Chichester Brisbane Toronto Singapore, 1975).
Multiscale modelling of electrical breakdown at high electric field
CMS HIP Multiscale modelling of electrical breakdown at high electric field Flyura Djurabekova, Helga Timkó, Aarne Pohjonen, Stefan Parviainen, Leila Costelle and Kai Nordlund Helsinki Institute of Physics
More informationStructural, electronic and magnetic properties of vacancies in single-walled carbon nanotubes
Structural, electronic and magnetic properties of vacancies in single-walled carbon nanotubes W. Orellana and P. Fuentealba Departamento de Física, Facultad de Ciencias, Universidad de Chile, Casilla 653,
More informationDensity-functional calculations of defect formation energies using the supercell method: Brillouin-zone sampling
Density-functional calculations of defect formation energies using the supercell method: Brillouin-zone sampling Jihye Shim and Eok-Kyun Lee Department of Chemistry and School of Molecular Science (BK21),
More informationComparisons of DFT-MD, TB- MD and classical MD calculations of radiation damage and plasmawallinteractions
CMS Comparisons of DFT-MD, TB- MD and classical MD calculations of radiation damage and plasmawallinteractions Kai Nordlund Department of Physics and Helsinki Institute of Physics University of Helsinki,
More informationDependence of the tip surface interaction on the surface electronic structure
Applied Surface Science 210 (2003) 146 152 Dependence of the tip surface interaction on the surface electronic structure A.S. Foster a,*, A.Y. Gal b, Y.J. Lee a, A.L. Shluger b, R.M. Nieminen a a Laboratory
More informationDensity Functional Theory (DFT) modelling of C60 and
ISPUB.COM The Internet Journal of Nanotechnology Volume 3 Number 1 Density Functional Theory (DFT) modelling of C60 and N@C60 N Kuganathan Citation N Kuganathan. Density Functional Theory (DFT) modelling
More informationAdsorption of Iodine on Pt(111) surface. Alexandre Tkachenko Marcelo Galván Nikola Batina
Adsorption of Iodine on Pt(111) surface Alexandre Tkachenko Marcelo Galván Nikola Batina Outline Motivation Experimental results Geometry Ab initio study Conclusions Motivation Unusual structural richness
More informationCITY UNIVERSITY OF HONG KONG. Theoretical Study of Electronic and Electrical Properties of Silicon Nanowires
CITY UNIVERSITY OF HONG KONG Ë Theoretical Study of Electronic and Electrical Properties of Silicon Nanowires u Ä öä ªqk u{ Submitted to Department of Physics and Materials Science gkö y in Partial Fulfillment
More informationWorkshops on X-band and high gradients: collaboration and resource
Workshops on X-band and high gradients: collaboration and resource 25 October 2012 International workshop on breakdown science and high gradient technology 18-20 April 2012 in KEK 25 October 2012 International
More informationDFT / SIESTA algorithms
DFT / SIESTA algorithms Javier Junquera José M. Soler References http://siesta.icmab.es Documentation Tutorials Atomic units e = m e = =1 atomic mass unit = m e atomic length unit = 1 Bohr = 0.5292 Ang
More informationChromium Cluster on Defected Graphene
Chromium Cluster on Defected Graphene Yuhang Liu June 29, 2017 Abstract In this work, diffusion process of Cr atoms on two types of defected graphene and structure and magnetic properties of Cr cluster
More informationGraphene Annealing: How Clean Can It Be?
Supporting Information for Graphene Annealing: How Clean Can It Be? Yung-Chang Lin, 1 Chun-Chieh Lu, 1 Chao-Huei Yeh, 1 Chuanhong Jin, 2 Kazu Suenaga, 2 Po-Wen Chiu 1 * 1 Department of Electrical Engineering,
More information2. TranSIESTA 1. SIESTA. DFT In a Nutshell. Introduction to SIESTA. Boundary Conditions: Open systems. Greens functions and charge density
1. SIESTA DFT In a Nutshell Introduction to SIESTA Atomic Orbitals Capabilities Resources 2. TranSIESTA Transport in the Nanoscale - motivation Boundary Conditions: Open systems Greens functions and charge
More informationON ELECTRON FIELD EMISSION FROM NANOCARBONS
ON ELECTRON FIELD EMISSION FROM NANOCARBONS Igor S. Altman, Peter V. Pikhitsa, Mansoo Choi National CRI Center for Nano Particle Control, Institute of Advanced Machinery and Design, School of Mechanical
More informationChapter 3. The (L)APW+lo Method. 3.1 Choosing A Basis Set
Chapter 3 The (L)APW+lo Method 3.1 Choosing A Basis Set The Kohn-Sham equations (Eq. (2.17)) provide a formulation of how to practically find a solution to the Hohenberg-Kohn functional (Eq. (2.15)). Nevertheless
More informationExplaining the apparent arbitrariness of the LDA-1/2 self-energy. correction method applied to purely covalent systems
Explaining the apparent arbitrariness of the LDA-1/2 self-energy correction method applied to purely covalent systems Kan-Hao Xue, 1,2 Leonardo R. C. Fonseca, 3 and Xiang-Shui Miao 1,2 1 School of Optical
More informationDefects in TiO 2 Crystals
, March 13-15, 2013, Hong Kong Defects in TiO 2 Crystals Richard Rivera, Arvids Stashans 1 Abstract-TiO 2 crystals, anatase and rutile, have been studied using Density Functional Theory (DFT) and the Generalized
More informationHow to run SIESTA. Introduction to input & output files
How to run SIESTA Introduction to input & output files Linear-scaling DFT based on Numerical Atomic Orbitals (NAOs) Born-Oppenheimer DFT Pseudopotentials Numerical atomic orbitals relaxations, MD, phonons.
More informationPrerequisites for reliable modeling with first-principles methods. P. Kratzer Fritz-Haber-Institut der MPG D Berlin-Dahlem, Germany
Prerequisites for reliable modeling with first-principles methods P. Kratzer Fritz-Haber-Institut der MPG D-14195 Berlin-Dahlem, Germany Prerequisites for modeling (I) Issues to consider when applying
More informationFrom 180º stripe domains to more exotic patterns of polarization in ferroelectric nanostructures. A first principles view
From 180º stripe domains to more exotic patterns of polarization in ferroelectric nanostructures. A first principles view Pablo Aguado-Puente Javier Junquera Ferroelectricity: Basic definitions Existence
More informationSupplementary Information:
Supplementary Figures Supplementary Information: a b 1 2 3 0 ΔZ (pm) 66 Supplementary Figure 1. Xe adsorbed on a Cu(111) surface. (a) Scanning tunnelling microscopy (STM) topography of Xe layer adsorbed
More informationElectronic Structure Theory for Periodic Systems: The Concepts. Christian Ratsch
Electronic Structure Theory for Periodic Systems: The Concepts Christian Ratsch Institute for Pure and Applied Mathematics and Department of Mathematics, UCLA Motivation There are 10 20 atoms in 1 mm 3
More informationTunable Band Gap of Silicene on Monolayer Gallium Phosphide Substrate
2017 International Conference on Energy Development and Environmental Protection (EDEP 2017) ISBN: 978-1-60595-482-0 Tunable Band Gap of Silicene on Monolayer Gallium Phosphide Substrate Miao-Juan REN
More informationSupplementary Information
Supplementary Information a b Supplementary Figure 1. Morphological characterization of synthesized graphene. (a) Optical microscopy image of graphene after transfer on Si/SiO 2 substrate showing the array
More informationSupporting Online Material (1)
Supporting Online Material The density functional theory (DFT) calculations were carried out using the dacapo code (http://www.fysik.dtu.dk/campos), and the RPBE (1) generalized gradient correction (GGA)
More informationRealistic model tips in simulations of nc-afm
INSTITUTE OF PHYSICS PUBLISHING Nanotechnology 15 (24) S6 S64 Realistic model tips in simulations of nc-afm NANOTECHNOLOGY PII: S957-4484(4)68562-X ASFoster 1,ALShluger 1,2 and R M Nieminen 1 1 Laboratory
More informationarxiv: v1 [cond-mat.mes-hall] 15 Aug 2014
The potential applications of phosphorene as anode arxiv:1408.3488v1 [cond-mat.mes-hall] 15 Aug 2014 materials in Li-ion batteries Shijun Zhao,, and Wei Kang, HEDPS, Center for Applied Physics and Technology,
More informationCZ České Budějovice, Czech Republic b Technical University of Liberec, Department of Materials Science, Hálkova 6, D Dresden, Germany
INVESTIGATION OF ELECTRIC CONDITIONS IN THE VICINITY OF CARBON NANOTUBES GROWN IN A DC PLASMA SHEATH J. Blažek a, P. Špatenka b, Ch. Taeschner c, A. Leonhardt c a University of South Bohemia, Department
More informationDevelopment of an empirical interatomic potential for the AgTi system
Loughborough University Institutional Repository Development of an empirical interatomic potential for the AgTi system This item was submitted to Loughborough University's Institutional Repository by the/an
More informationSpatially resolving density-dependent screening around a single charged atom in graphene
Supplementary Information for Spatially resolving density-dependent screening around a single charged atom in graphene Dillon Wong, Fabiano Corsetti, Yang Wang, Victor W. Brar, Hsin-Zon Tsai, Qiong Wu,
More informationSupporting Information: Selective Electrochemical Generation of. Hydrogen Peroxide from Water Oxidation
Supporting Information: Selective Electrochemical Generation of Hydrogen Peroxide from Water Oxidation Venkatasubramanian Viswanathan,,, Heine A. Hansen,, and Jens K. Nørskov,, Department of Mechanical
More informationDithiocarbamate Self-Assembled Monolayers as Efficient Surface Modifiers for Low Work Function Noble Metals
Dithiocarbamate Self-Assembled Monolayers as Efficient Surface Modifiers for Low Work Function Noble Metals Dominik Meyer*,1, Tobias Schäfer 1, Philip Schulz 1,2,3, Sebastian Jung 1, Daniel Mokros 1, Ingolf
More informationAB INITIO STUDY OF NANO STRUCTURED FUNCTIONALIZED GRAPHENE WITH 30C ATOMS
International Journal of Science, Environment and Technology, Vol. 1, No 3, 2012, 108-112 AB INITIO STUDY OF NANO STRUCTURED FUNCTIONALIZED GRAPHENE WITH 30C ATOMS Naveen Kumar* and Jyoti Dhar Sharma Deptt.
More informationSUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION Method: Epitaxial graphene was prepared by heating an Ir(111) crystal to 550 K for 100 s under 2 x 10-5 Pa partial pressure of ethylene, followed by a flash anneal to 1420 K 1.
More informationPractical Guide to Density Functional Theory (DFT)
Practical Guide to Density Functional Theory (DFT) Brad Malone, Sadas Shankar Quick recap of where we left off last time BD Malone, S Shankar Therefore there is a direct one-to-one correspondence between
More informationApplication of single crystalline tungsten for fabrication of high resolution STM probes with controlled structure 1
Application of single crystalline tungsten for fabrication of high resolution STM probes with controlled structure 1 A. N. Chaika a, S. S. Nazin a, V. N. Semenov a, V. G. Glebovskiy a, S. I. Bozhko a,b,
More informationSupporting Information
Supporting Information Controlled Growth of Ceria Nanoarrays on Anatase Titania Powder: A Bottom-up Physical Picture Hyun You Kim 1, Mark S. Hybertsen 2*, and Ping Liu 2* 1 Department of Materials Science
More informationEnergy band of manipulated atomic structures on an insulator substrate
Energy band of manipulated atomic structures on an insulator substrate Toshishige Yamada and Yoshihisa Yamamoto ERATO Quantum Fluctuation Project, Edward L. Ginzton Laboratory, Stanford University, Stanford,
More informationStructure of CoO(001) surface from DFT+U calculations
Structure of CoO(001) surface from DFT+U calculations B. Sitamtze Youmbi and F. Calvayrac Institut des Molécules et Matériaux du Mans (IMMM), UMR CNRS 6283 16 septembre 2013 Introduction Motivation Motivation
More informationDefects in Semiconductors
Defects in Semiconductors Mater. Res. Soc. Symp. Proc. Vol. 1370 2011 Materials Research Society DOI: 10.1557/opl.2011. 771 Electronic Structure of O-vacancy in High-k Dielectrics and Oxide Semiconductors
More informationReferences. Documentation Manuals Tutorials Publications
References http://siesta.icmab.es Documentation Manuals Tutorials Publications Atomic units e = m e = =1 atomic mass unit = m e atomic length unit = 1 Bohr = 0.5292 Ang atomic energy unit = 1 Hartree =
More informationSTRUCTURAL AND MECHANICAL PROPERTIES OF AMORPHOUS SILICON: AB-INITIO AND CLASSICAL MOLECULAR DYNAMICS STUDY
STRUCTURAL AND MECHANICAL PROPERTIES OF AMORPHOUS SILICON: AB-INITIO AND CLASSICAL MOLECULAR DYNAMICS STUDY S. Hara, T. Kumagai, S. Izumi and S. Sakai Department of mechanical engineering, University of
More informationSupplementary Figures
Supplementary Figures Supplementary Figure S1: Calculated band structure for slabs of (a) 14 blocks EuRh2Si2/Eu, (b) 10 blocks SrRh2Si2/Sr, (c) 8 blocks YbRh2Si2/Si, and (d) 14 blocks EuRh2Si2/Si slab;
More informationPBS: FROM SOLIDS TO CLUSTERS
PBS: FROM SOLIDS TO CLUSTERS E. HOFFMANN AND P. ENTEL Theoretische Tieftemperaturphysik Gerhard-Mercator-Universität Duisburg, Lotharstraße 1 47048 Duisburg, Germany Semiconducting nanocrystallites like
More informationSUPPLEMENTARY INFORMATION
Supplementary Methods Materials Synthesis The In 4 Se 3-δ crystal ingots were grown by the Bridgeman method. The In and Se elements were placed in an evacuated quartz ampoule with an excess of In (5-10
More informationMomentum filtering effect in molecular wires
PHYSICAL REVIEW B 70, 195309 (2004) Momentum filtering effect in molecular wires Chao-Cheng Kaun, 1, * Hong Guo, 1 Peter Grütter, 1 and R. Bruce Lennox 1,2 1 Center for the Physics of Materials and Department
More informationCanadian Journal of Chemistry. Spin-dependent electron transport through a Mnphthalocyanine. Draft
Spin-dependent electron transport through a Mnphthalocyanine molecule: an SS-DFT study Journal: Manuscript ID cjc-216-28 Manuscript Type: Article Date Submitted by the Author: 6-Jun-216 Complete List of
More informationHigh resolution STM imaging with oriented single crystalline tips
High resolution STM imaging with oriented single crystalline tips A. N. Chaika a, *, S. S. Nazin a, V. N. Semenov a, N. N Orlova a, S. I. Bozhko a,b, O. Lübben b, S. A. Krasnikov b, K. Radican b, and I.
More informationLecture 4: Band theory
Lecture 4: Band theory Very short introduction to modern computational solid state chemistry Band theory of solids Molecules vs. solids Band structures Analysis of chemical bonding in Reciprocal space
More informationFirst Principles Calculation of Defect and Magnetic Structures in FeCo
Materials Transactions, Vol. 47, No. 11 (26) pp. 2646 to 26 Special Issue on Advances in Computational Materials Science and Engineering IV #26 The Japan Institute of Metals First Principles Calculation
More informationScanning Tunneling Microscopy. how does STM work? the quantum mechanical picture example of images how can we understand what we see?
Scanning Tunneling Microscopy how does STM work? the quantum mechanical picture example of images how can we understand what we see? Observation of adatom diffusion with a field ion microscope Scanning
More informationCO Adsorption Site Preference on Platinum: Charge Is the Essence
Supporting Information CO Adsorption Site Preference on Platinum: Charge Is the Essence G.T. Kasun Kalhara Gunasooriya, and Mark Saeys *, Laboratory for Chemical Technology, Ghent University, Technologiepark
More informationMagnetic properties of spherical fcc clusters with radial surface anisotropy
Magnetic properties of spherical fcc clusters with radial surface anisotropy D. A. Dimitrov and G. M. Wysin Department of Physics Kansas State University Manhattan, KS 66506-2601 (December 6, 1994) We
More informationDFT EXERCISES. FELIPE CERVANTES SODI January 2006
DFT EXERCISES FELIPE CERVANTES SODI January 2006 http://www.csanyi.net/wiki/space/dftexercises Dr. Gábor Csányi 1 Hydrogen atom Place a single H atom in the middle of a largish unit cell (start with a
More informationExperiment Section Fig. S1 Fig. S2
Electronic Supplementary Material (ESI) for ChemComm. This journal is The Royal Society of Chemistry 2018 Supplementary Materials Experiment Section The STM experiments were carried out in an ultrahigh
More informationCorrelations in coverage-dependent atomic adsorption energies on Pd(111)
Correlations in coverage-dependent atomic adsorption energies on Pd(111) John R. Kitchin* Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA Received 23
More informationDoped Quantum Sized Gold Nanoclusters
Doped Quantum Sized Gold Nanoclusters Sumali Bansal 1*, Priyanka 2, Rajiv Bhandari 3, Keya Dharamvir 4 1 DAV College, Sector 10, Chandigarh, India 2 Guru Gobind Singh College for Women, Sector 26, Chandigarh,
More informationTheoretical Calculations of Cohesive and Electronic Properties of Quaternary AlGaInN Alloys
Vol. 112 (2007) ACTA PHYSICA POLONICA A No. 2 Proceedings of the XXXVI International School of Semiconducting Compounds, Jaszowiec 2007 Theoretical Calculations of Cohesive and Electronic Properties of
More informationCo-existing honeycomb and Kagome characteristics. in the electronic band structure of molecular. graphene: Supporting Information
Co-existing honeycomb and Kagome characteristics in the electronic band structure of molecular graphene: Supporting Information Sami Paavilainen,, Matti Ropo,, Jouko Nieminen, Jaakko Akola,, and Esa Räsänen
More informationEnergy-Level Alignment at the Interface of Graphene Fluoride and Boron Nitride Monolayers: An Investigation by Many-Body Perturbation Theory
Supporting Information Energy-Level Alignment at the Interface of Graphene Fluoride and Boron Nitride Monolayers: An Investigation by Many-Body Perturbation Theory Qiang Fu, Dmitrii Nabok, and Claudia
More informationSupporting Information for Interfacial Effects on. the Band Edges of Functionalized Si Surfaces in. Liquid Water
Supporting Information for Interfacial Effects on the Band Edges of Functionalized Si Surfaces in Liquid Water Tuan Anh Pham,,, Donghwa Lee, Eric Schwegler, and Giulia Galli, Department of Chemistry, University
More informationAb initio Molecular Dynamics and Elastic Properties of TiC and TiN Nanoparticles
Mat. Res. Soc. Symp. Proc. Vol. 704 2002 Materials Research Society Ab initio Molecular Dynamics and Elastic Properties of TiC and TiN Nanoparticles A. V. Postnikov and P. Entel Theoretical Low-Temperature
More informationComputational discovery of p-type transparent oxide semiconductors using
Computational discovery of p-type transparent oxide semiconductors using hydrogen descriptor Kanghoon Yim 1,*,, Yong Youn 1,*, Miso Lee 1, Dongsun Yoo 1, Joohee Lee 1, Sung Haeng Cho 2 & Seungwu Han 1
More informationDetermination of the Electric Dipole Moment of a Molecule from. Density Functional Theory Calculations
Determination of the Electric Dipole Moment of a Molecule from Density Functional Theory Calculations Byeong June Min Department of Physics, Daegu University, Kyungsan 712-714, Korea Density functional
More informationDipole formation at metal/ptcda interfaces: Role of the Charge Neutrality Level
EUROPHYSICS LETTERS 15 March 2004 Europhys. Lett., 65 (6), pp. 802 808 (2004) DOI: 10.1209/epl/i2003-10131-2 Dipole formation at metal/ptcda interfaces: Role of the Charge Neutrality Level H. Vázquez 1,
More informationSnO 2 Physical and Chemical Properties due to the Impurity Doping
, March 13-15, 2013, Hong Kong SnO 2 Physical and Chemical Properties due to the Impurity Doping Richard Rivera, Freddy Marcillo, Washington Chamba, Patricio Puchaicela, Arvids Stashans Abstract First-principles
More information(a) (b) Supplementary Figure 1. (a) (b) (a) Supplementary Figure 2. (a) (b) (c) (d) (e)
(a) (b) Supplementary Figure 1. (a) An AFM image of the device after the formation of the contact electrodes and the top gate dielectric Al 2 O 3. (b) A line scan performed along the white dashed line
More informationElectronic Supplementary Information
Electronic Supplementary Material (ESI) for Physical Chemistry Chemical Physics. This journal is the Owner Societies 2014 Electronic Supplementary Information Rational modifications on champion porphyrin
More informationdoi: /PhysRevLett
doi:.3/physrevlett.86.3835 VOLUME 86, NUMBER 7 P H Y S I C A L R E V I E W L E T T E R S 3 APRIL Energetics and Electronic Structures of Encapsulated C 6 in a Carbon Nanotube Susumu Okada, Susumu Saito,
More informationBayesian Error Estimation in Density Functional Theory
Bayesian Error Estimation in Density Functional Theory Karsten W. Jacobsen Jens Jørgen Mortensen Kristen Kaasbjerg Søren L. Frederiksen Jens K. Nørskov CAMP, Dept. of Physics, DTU James P. Sethna LASSP,
More informationSelectivity in the initial C-H bond cleavage of n-butane on PdO(101)
Supporting Information for Selectivity in the initial C-H bond cleavage of n-butane on PdO(101) Can Hakanoglu (a), Feng Zhang (a), Abbin Antony (a), Aravind Asthagiri (b) and Jason F. Weaver (a) * (a)
More informationA Momentum Space View of the Surface Chemical Bond - Supplementary Information
A Momentum Space View of the Surface Chemical Bond - Supplementary Information Stephen Berkebile, a Thomas Ules, a Peter Puschnig, b Lorenz Romaner, b Georg Koller, a Alexander J. Fleming, a Konstantin
More informationPotentials, periodicity
Potentials, periodicity Lecture 2 1/23/18 1 Survey responses 2 Topic requests DFT (10), Molecular dynamics (7), Monte Carlo (5) Machine Learning (4), High-throughput, Databases (4) NEB, phonons, Non-equilibrium
More informationarxiv:cond-mat/ v1 17 May 1995
Projection of plane-wave calculations into atomic orbitals Daniel Sanchez-Portal, Emilio Artacho, and Jose M. Soler Instituto de Ciencia de Materiales Nicolás Cabrera and Departamento de Física de la Materia
More informationAdsorption of Atomic H and O on the (111) Surface of Pt 3 Ni Alloys
J. Phys. Chem. B 2004, 108, 8311-8323 8311 Adsorption of Atomic H and O on the (111) Surface of Pt 3 Ni Alloys Timo Jacob and William A. Goddard, III* Materials and Process Simulation Center, Beckman Institute
More informationSupporting information. The Unusual and the Expected in the Si/C Phase Diagram. Guoying Gao, N. W. Ashcroft and Roald Hoffmann.
Supporting information The Unusual and the Expected in the Si/C Phase Diagram Guoying Gao, N. W. Ashcroft and Roald Hoffmann Table of Contents Computational Methods...S1 Hypothetical Structures for Si
More informationFirst-principles calculations of the formation and structures of point defects on GaN (0001) surface
American Journal of Physical Chemistry 2014; 3(4): 47-53 Published online September 30, 2014 (http://www.sciencepublishinggroup.com/j/ajpc) doi: 10.11648/j.ajpc.20140304.12 ISS: 2327-2430 (Print); ISS:
More informationLi ion migration in Li 3 PO 4 electrolytes: Effects of O vacancies and N substitutions. Winston-Salem, North Carolina 27106, USA
75 Downloaded 22 Dec 28 to 52.7.52.46. Redistribution subject to ECS license or copyright; see http://www.ecsdl.org/terms_use.jsp ECS Transactions, 3 (26) 75-82 (28).49/.35379 The Electrochemical Society
More informationSupporting Information for. Structural and Chemical Dynamics of Pyridinic Nitrogen. Defects in Graphene
Supporting Information for Structural and Chemical Dynamics of Pyridinic Nitrogen Defects in Graphene Yung-Chang Lin, 1* Po-Yuan Teng, 2 Chao-Hui Yeh, 2 Masanori Koshino, 1 Po-Wen Chiu, 2 Kazu Suenaga
More informationAb initio-based Approach to N pair Formation on GaAs(001)-(2 4) Surfaces
e-journal of Surface Science and Nanotechnology 31 January 2014 e-j. Surf. Sci. Nanotech. Vol. 12 (2014) 6-10 Conference - ACSIN-12&ICSPM21 - Ab initio-based Approach to N pair Formation on GaAs(001)-(2
More informationSUPPLEMENTARY INFORMATION
Simultaneous and coordinated rotational switching of all molecular rotors in a network Y. Zhang, H. Kersell, R. Stefak, J. Echeverria, V. Iancu, U. G. E. Perera, Y. Li, A. Deshpande, K.-F. Braun, C. Joachim,
More informationDependence of workfunction on the geometries of single-walled carbon nanotubes
INSTITUTE OF PHYSICS PUBLISHING Nanotechnology 15 () 8 8 Dependence of workfunction on the geometries of single-walled carbon nanotubes NANOTECHNOLOGY PII: S9578()77 Chun-Wei Chen 1 and Ming-Hsien Lee
More informationNote. Performance limitations of circular colliders: head-on collisions
2014-08-28 m.koratzinos@cern.ch Note Performance limitations of circular colliders: head-on collisions M. Koratzinos University of Geneva, Switzerland Keywords: luminosity, circular, collider, optimization,
More informationTeoría del Funcional de la Densidad (Density Functional Theory)
Teoría del Funcional de la Densidad (Density Functional Theory) Motivation: limitations of the standard approach based on the wave function. The electronic density n(r) as the key variable: Functionals
More informationModeling Electron Emission From Diamond-Amplified Cathodes
Modeling Electron Emission From Diamond-Amplified Cathodes D. A. Dimitrov Tech-X Corporation, Boulder, CO I. Ben-Zvi, T. Rao, J. Smedley, E. Wang, X. Chang Brookhaven National Lab, NY This work is funded
More informationYuan Ping 1,2,3*, Robert J. Nielsen 1,2, William A. Goddard III 1,2*
Supporting Information for the Reaction Mechanism with Free Energy Barriers at Constant Potentials for the Oxygen Evolution Reaction at the IrO2 (110) Surface Yuan Ping 1,2,3*, Robert J. Nielsen 1,2, William
More informationBasics of DFT applications to solids and surfaces
Basics of DFT applications to solids and surfaces Peter Kratzer Physics Department, University Duisburg-Essen, Duisburg, Germany E-mail: Peter.Kratzer@uni-duisburg-essen.de Periodicity in real space and
More informationSimulation of RF Cavity Dark Current in Presence of Helical Magnetic Field
Preprint FERMILAB-TM-2467-TP. Simulation of RF Cavity Dark Current in Presence of Helical Magnetic Field GennadyRomanov, Vladimir Kashikhin Abstract. In order to produce muon beam of high enough quality
More informationReduction of thermal emittance of rf guns *
SLAC-PUB-884 LCLS TN 99-8 October 1999 Reduction of thermal emittance of rf guns * J. E. Clendenin, T. Kotseroglou, G. A. Mulhollan, D. T. Palmer, and J. F. Schmerge Stanford Linear Accelerator Center,
More informationCrystallographic Dependence of CO Activation on Cobalt Catalysts: HCP versus FCC
Crystallographic Dependence of CO Activation on Cobalt Catalysts: HCP versus FCC Jin-Xun Liu, Hai-Yan Su, Da-Peng Sun, Bing-Yan Zhang, and Wei-Xue Li* State Key Laboratory of Catalysis, Dalian Institute
More informationThermal, electrical and mechanical simulations of field emitters using Finite Element Method
Thermal, electrical and mechanical simulations of field emitters using Finite Element Method V. Zadin, S. Parviainen, V. Jansson, S. Vigonski, M. Veske, K. Kuppart, K. Eimre, R. Aare, A. Aabloo, F. Djurabekova
More informationFermi level influence on the adsorption at semiconductor surfaces ab initio simulations
Fermi level influence on the adsorption at semiconductor surfaces ab initio simulations StanisławKrukowski* 1,2, Paweł Kempisty 1, Paweł Strąk 1 1 Institute of High Pressure Physics, Polish Academy of
More informationFoster, Adam; Lopez Gejo, F.; Shluger, A. L.; Nieminen, Risto Vacancy and interstitial defects in hafnia
Powered by TCPDF (www.tcpdf.org) This is an electronic reprint of the original article. This reprint may differ from the original in pagination and typographic detail. Foster, Adam; Lopez Gejo, F.; Shluger,
More informationOutline. Introduction: graphene. Adsorption on graphene: - Chemisorption - Physisorption. Summary
Outline Introduction: graphene Adsorption on graphene: - Chemisorption - Physisorption Summary 1 Electronic band structure: Electronic properties K Γ M v F = 10 6 ms -1 = c/300 massless Dirac particles!
More information2) Atom manipulation. Xe / Ni(110) Model: Experiment:
2) Atom manipulation D. Eigler & E. Schweizer, Nature 344, 524 (1990) Xe / Ni(110) Model: Experiment: G.Meyer, et al. Applied Physics A 68, 125 (1999) First the tip is approached close to the adsorbate
More informationSupporting Information
Supporting Information The Origin of Active Oxygen in a Ternary CuO x /Co 3 O 4 -CeO Catalyst for CO Oxidation Zhigang Liu, *, Zili Wu, *, Xihong Peng, ++ Andrew Binder, Songhai Chai, Sheng Dai *,, School
More information6. Computational Design of Energy-related Materials
6. Computational Design of Energy-related Materials Contents 6.1 Atomistic Simulation Methods for Energy Materials 6.2 ab initio design of photovoltaic materials 6.3 Solid Ion Conductors for Fuel Cells
More informationSystematic convergence for realistic projects Fast versus accurate
Systematic convergence for realistic projects Fast versus accurate Daniel Sánchez-Portal Centro de Física de Materiales, Centro Mixto CSIC- UPV/EHU,San Sebastián, Spain Email: sqbsapod@sc.ehu.es Thanks
More informationChemisorption VIII. NEVF 514 Surface Physics. Winter Term Troja, 16th December 2016
Chemisorption František Máca VIII. NEVF 514 Surface Physics Winter Term 2016-2017 Troja, 16th December 2016 Chemisorption The knowledge of chemisorption phenomena requires the determination of the geometrical
More informationDocument Version Publisher s PDF, also known as Version of Record (includes final page, issue and volume numbers)
Parametrization of modified embedded-atom-method potentials for Rh, Pd, Ir, and Pt based on density functional theory calculations, with applications to surface properties Beurden, van, P.; Kramer, G.J.
More information