Thermal and electronic analysis of GaInAs/AlInAs mid-ir
|
|
- Basil Wilkerson
- 5 years ago
- Views:
Transcription
1 Thermal and electronic analysis of GaInAs/AlInAs mid-ir QCLs Gaetano Scamarcio Miriam S. Vitiello, Vincenzo Spagnolo, Antonia Lops oratory LIT 3, CNR - INFM Physics Dept.,University of Bari, Italy T. Gresch, J. Faist University of Neuchatel TU Zurich Acknowledgements: Q. Yang, J. Wagner Fraunhofer Inst. Freiburg
2 Motivation > 1 years progress in the quantum design of active regions high performance QCLs (CW, RT, single mode, high power, at selected mid-ir λ s) Real-world applications wants improved performance: e.g. ppb/ppt QCL-based sensor systems compact/portable, affordable, batteryoperated, Typical QCLs have: Large electrical power ( 1 W) Low wall-plug efficiencies at room temperature (single-digit %) Heat generated in the active not efficiently extracted from the device Physical limits (thermal boundary resistance) (# interfaces)
3 RT CW mid-ir QCLs fabrication technologies Electroplated QCLs InP-buried QCLs Epilayer-down QCLs Buffer Solder Copper Solder Au Heat extraction in all in-plane directions Au top contact layer width > 4 µm Lateral heat extraction enhanced Require additional growing steps May suffer from current leakage Better coupling w/ heat sink High quality wafer bonding required State-of of-art [Evans, Slivken, Razeghi et al. APL, Aug.27] Narrow-ridge buried heterostructure waveguides + Electroplating + Thermally optimized packaging 9.3% wall-plug efficiency at RT at 4.7 µm (!)
4 Outline Review on thermal properties of mid-ir QCLs focus on devices operating in the 3-5 µm window GaInAs/AlInAs GaInAs/AlGaAsSb Strategies to improve thermal performance of mid-ir QCLs InAs/InGaAs AlAs/AlInAs smoothed interfaces Improved processing using high-k dielectrics Assessment of the electronic and thermal properties of mid- IR QCLs via µ-probe photoluminescence Electron lattice coupling vs conduction band offset Thermal boundary resistance
5 Experimental approach Photoluminescence spectroscopy on the laser front facets Exploit µ-probe spatial resolution (diffraction limit) No hot-spots or surface e-h recombination (unipolarity) Facet temperatures close to bulk temperature in QCLs Photoluminescence analysis local lattice and electronic temperatures
6 Anisotropic thermal conductivity 2D thermal modeling [Lops, Spagnolo, Scamarcio, JAP 26] GaInAs/AlInAs mid-ir 8.1 µm Z (µm) X (µm) + Au SiO 2 AlInAs active InP W Temperature (K) W 1.5W 1.W.5W Temperature (K) W 1.W.5W Z (µm) X (µm) T L > T H ; Temperature overshoot in the active region k T across the active different heat fluxes towards AlInAs cladding and InP substrate Modeling k =.6 W/K m one order of magnitude smaller than bulk (!?!?!) k // bulk
7 Thermal conductivity extraction ( k T ) = Q 2D-heat transport eq. solved and fitted to the exp data Boundary conds.: T=T H ; no heat escapes through the sides or top of the laser Known conductivities for all bulk-like layers considered Temperature influence and doping influence included Only fitting parameters: k and k // in the active region Thermal conductivity (W/K m) InP GaAs Ga.47 In.53 As Al.48 In.52 As Temperature (K) Thermal conductivity (W/K.m) Cu Au SiO 2 x1 In Solder Temperature (K)
8 Thermal resistivity in heterostructures R a, b: well, barrier thickness # interfaces a = R a + b a b + R a + b weigthed average of bulk resistivities b N + TBR a + b Thermal boundary or Kapitza resistance interface thermal resistivity If N small interface contribution to R is negligible Our experiments in THz and mid-ir QCLs: bulk contribution never accounts for the measured values Interface thermal resistivity dominant Comparing experimental R with calculated bulk contributions TBR
9 Can we improve the thermal conductivity of mid-ir QCLs? Design active regions with reduced TBR material choice reduce interface sharpness Improve device fabrication - use of high-k dielectrics
10 Influence of material: the case of InGaAs/AlGaAsSb active regions [calculations by C. Zhu et al. JAP (26)] K (AlGaAsSb) ¼ K(InGaAs), K(InAlAs) however Better matching of phonon properties in InGaAs/AlGaAsSb phonon dispersion; acoustic impedance (mass density x sound velocity); phonon DOS; Debye temperature TBR (InGaAs/AlGaAsSb) < TBR (InGaAs/AlInAs)
11 InGaAs/AlGaAsSb QCLs [Vitiello, Scamarcio, Spagnolo, Yang, Wagner et al. APL, 27] 9 Emission wavelength λ= 4.9 µm # interfaces = 55 T L (K) 8 7 k = 1.8 W/K m Interface contribution to thermal resistivity = 63 % z (µm) TBR =.75 x 1-9 K/W m 2 Comparable with GaAs/AlGaAs ~ 5 times better than GaInAs/AlInAs
12 Influence of interface structure [Vitiello, Gresch, Spagnolo, Scamarcio,Faist et al., submitted APL, 27] AlAs strained In.61 Ga.39 As/In.45 Al.55 As QCLs Energy (ev) InAs or AlAs δ-layers (.2 nm) to increase the conduction band discontinuity in the active layers 1ML broadening at IFs included in the design InAs Emission wavelength λ= 4.78 µm Peak optical power: K; T MAX (CW) = 243 K
13 Temperature mapping InGaAs InGaAs InGaAs 5µm Au InP AR SiO P=4W centre InP T L (K) 8 side k = 2. W/K m # interfaces = 6 / 1325 TBR = x 1-9 K/W m 2 Comparable with GaAs/AlGaAs z (µm)
14 Mid-ir ir InGaAs-based and GaAs-based QCLs QCL active region λ (µm) T H (K) k (W/(K m)) TBR (1-9 K/W m 2 ) InGaAs/AlInAs InGaAs/InGaAsSb Epilayer down InGaAs/InGaAsSb Epilayer up InGaAs/AlInAs InAs, AlAs δ-layers GaAs/Al.33 Ga.67 As Developing new design strategies of QCLs including smoothed interfaces and/or phonon matched materials will pay off TBR reduction improved thermal management
15 Electronic properties / wall plug efficiency [strained In.61 Ga.39 As/In.45 Al.55 As QCLs + InAs, AlAs δ-layers] T e -T H (K) η w (%) T H =6K Power (W) T L -T H (K) (T e -T L -T off ) (K) α = 34.3 Kcm 2 /ka J(kA/cm 2 ) R E = T E / P = 22. K/W R L = T L / P = 11.5 K/W η w = 1- T/(P in R L ) η Wmax = (8.4 ±.7) %
16 Electron-lattice lattice coupling Heterostructure λ (µm) E C (ev) α (Kcm 2 /ka) GaAs/Al.45 Ga.55 As GaAs/AlAs Ga.47 In.53 As/Al.62 Ga.38 As 1-x Sb x epilayer-side Ga.47 In.53 As/Al.62 Ga.38 As 1-x Sb x substrate side InGaAs/AlInAs InAs, AlAs δ-layers Comparable active region mean doping in the range cm -3 The electron-lattice coupling increases with the conduction band offset
17 Planarization w/dielectrics Z (µm) µm 52% 14% (a) 17% 17% T max =412K X (µm) Temperature (K) Core structure as in Yu, Razeghi et al., APL (23), T H =298 K, P=7W Thermal performance comparable with InP-buried devices Z (µm) InP-buried 18.5% 18.5% 49.6% (d) 13.4% T max =397 K X (µm) Temperature (K) Z (µm) Si 3 N 4 -buried 16.6% (b) 14.8% 16.6% 52% T max =43K X (µm) Temperature (K)
18 Thermal conductivity of Si 3 N 4 :Y 2 O 3 InP (3K) Si 3 N 4 (3K) SiO 2 (3K) [K. Watari et al. JMS Lett. (1999)]
19 Planarization of QCLs using Y 2 O 3 :Si [Spagnolo, Lops, Scamarcio, Vitiello, Di Franco, submitted JAP, 27] :Si 3 N 4 Z (µm) µm 52% 14% (a) 17% 17% T max =412K X (µm) Temperature (K) Z (µm) % -5 (c) 19.2% 17.7% 45.4% T max =39K X (µm) Temperature (K) Z (µm) InP-Buried 18.5% 18.5% 49.6% (d) 13.4% T max =397 K X (µm) Temperature (K) Improved thermal management No lateral current leakage Significant reduction in the device thermal resistance
20 Thermal resistance R L =(T max -T H )/P Mounting and processing configuration Top contact thickness Insulating material Planarizing material R L (K/W) Conventional Ridge waveguide.4 µm SiO Conventional Ridge waveguide.4 µm Si 3 N InP-Buried.4 µm Si 3 N Au Electroplated 5 µm SiO Planarization.4µm SiO 2 SiO Planarization.4µm Si 3 N 4 Si 3 N Planarization.4µm Si 3 N 4 Y 2 O 3 : Si 3 N Planarization + Au Electroplated 5 µm Si 3 N 4 Y 2 O 3 : Si 3 N Planarization with suitable dielectrics: Thermal performance comparable with conventional buried or electroplated structures 13% reduction of R L with respect to reference device [Yu, Razeghi et al. APL 83]
21 Summary Comparison of the electronic and thermal properties of mid- IR QCLs via µ-probe PL Strategies for the improvement of the thermal performance of mid-ir QCLs operating in the 3-5 µm range: Reduction of the thermal boundary resistance InGaAs/AlGaAsSb InGaAs/AlInAs + (AlAs, InAs) δ-layers Planarization using high-k dielectrics running: Simultaneous thermal and electrical modeling Design of QCLs w/improved thermal performance
THz QCL sources based on intracavity difference-frequency mixing
THz QCL sources based on intracavity difference-frequency mixing Mikhail Belkin Department of Electrical and Computer Engineering The University of Texas at Austin IQCLSW, Sept. 3, 218 Problems with traditional
More informationShort wavelength and strain compensated InGaAs-AlAsSb. AlAsSb quantum cascade lasers. D.Revin, S.Zhang, J.Cockburn, L.Wilson, S.
Short wavelength and strain compensated InGaAs-AlAsSb AlAsSb quantum cascade lasers D.Revin, S.Zhang, J.Cockburn, L.Wilson, S.Menzel, Department of Physics and Astronomy, University of Sheffield, United
More informationInGaAs-AlAsSb quantum cascade lasers
InGaAs-AlAsSb quantum cascade lasers D.G.Revin, L.R.Wilson, E.A.Zibik, R.P.Green, J.W.Cockburn Department of Physics and Astronomy, University of Sheffield, UK M.J.Steer, R.J.Airey EPSRC National Centre
More informationQuantum-cascade lasers without injector regions
Invited Paper Quantum-cascade lasers without injector regions A. Friedrich* and M.-C. Amann Walter Schottky Institute, Technical University of Munich, D-878 Garching, Germany ABSTRACT We present the status
More informationTHERMAL CONDUCTIVITY OF III-V SEMICONDUCTOR SUPERLATTICES
THERMAL CONDUCTIVITY OF III-V SEMICONDUCTOR SUPERLATTICES Song Mei, Zlatan Aksamija, and Irena Knezevic Electrical and Computer Engineering Department University of Wisconsin-Madison This work was supported
More informationQuantum Dot Lasers. Jose Mayen ECE 355
Quantum Dot Lasers Jose Mayen ECE 355 Overview of Presentation Quantum Dots Operation Principles Fabrication of Q-dot lasers Advantages over other lasers Characteristics of Q-dot laser Types of Q-dot lasers
More informationHigh Power Diode Lasers
Lecture 10/1 High Power Diode Lasers Low Power Lasers (below tenth of mw) - Laser as a telecom transmitter; - Laser as a spectroscopic sensor; - Laser as a medical diagnostic tool; - Laser as a write-read
More informationHigh performance THz quantum cascade lasers
High performance THz quantum cascade lasers Karl Unterrainer M. Kainz, S. Schönhuber, C. Deutsch, D. Bachmann, J. Darmo, H. Detz, A.M. Andrews, W. Schrenk, G. Strasser THz QCL performance High output power
More informationIntroduction to Optoelectronic Device Simulation by Joachim Piprek
NUSOD 5 Tutorial MA Introduction to Optoelectronic Device Simulation by Joachim Piprek Outline:. Introduction: VCSEL Example. Electron Energy Bands 3. Drift-Diffusion Model 4. Thermal Model 5. Gain/Absorption
More informationIII-V nanostructured materials synthesized by MBE droplet epitaxy
III-V nanostructured materials synthesized by MBE droplet epitaxy E.A. Anyebe 1, C. C. Yu 1, Q. Zhuang 1,*, B. Robinson 1, O Kolosov 1, V. Fal ko 1, R. Young 1, M Hayne 1, A. Sanchez 2, D. Hynes 2, and
More informationNovel materials and nanostructures for advanced optoelectronics
Novel materials and nanostructures for advanced optoelectronics Q. Zhuang, P. Carrington, M. Hayne, A Krier Physics Department, Lancaster University, UK u Brief introduction to Outline Lancaster University
More informationRecent progress on single-mode quantum cascade lasers
Recent progress on single-mode quantum cascade lasers B. Hinkov 1,*, P. Jouy 1, A. Hugi 1, A. Bismuto 1,2, M. Beck 1, S. Blaser 2 and J. Faist 1 * bhinkov@phys.ethz.ch 1 Institute of Quantum Electronics,
More information3-1-2 GaSb Quantum Cascade Laser
3-1-2 GaSb Quantum Cascade Laser A terahertz quantum cascade laser (THz-QCL) using a resonant longitudinal optical (LO) phonon depopulation scheme was successfully demonstrated from a GaSb/AlSb material
More informationSpectroscopic study of transparency current in mid-infrared quantum cascade lasers
Spectroscopic study of transparency current in mid-infrared quantum cascade lasers Dmitry G. Revin, 1,* Randa S. Hassan, 1,4 Andrey B. Krysa, 2 Yongrui Wang, 3 Alexey Belyanin, 3 Kenneth Kennedy, 2 Chris
More informationLecture 2. Electron states and optical properties of semiconductor nanostructures
Lecture Electron states and optical properties of semiconductor nanostructures Bulk semiconductors Band gap E g Band-gap slavery: only light with photon energy equal to band gap can be generated. Very
More informationMONTE CARLO SIMULATION OF ELECTRON DYNAMICS IN QUANTUM CASCADE LASERS. Xujiao Gao
MONTE CARLO SIMULATION OF ELECTRON DYNAMICS IN QUANTUM CASCADE LASERS by Xujiao Gao A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy (Electrical
More informationR. MacKenzie, J.J. Lim, S. Bull, S. Sujecki and E.C. Larkins
The impact of thermal boundary resistance in opto-electronic devices R. MacKenzie1, J.J. Lim, S. Bull, S. Sujecki and E.C. Larkins School of Electrical and Electronic Engineering, University of Nottingham,
More informationFabrication and Evaluation of In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/InP Quantum Cascade Lasers
Fabrication and Evaluation of In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/InP Quantum Cascade Lasers Submitted for the degree of Doctor of Philosophy to the Faculty of Engineering, University of Glasgow by Corrie
More informationGeSi Quantum Dot Superlattices
GeSi Quantum Dot Superlattices ECE440 Nanoelectronics Zheng Yang Department of Electrical & Computer Engineering University of Illinois at Chicago Nanostructures & Dimensionality Bulk Quantum Walls Quantum
More informationMetal Vapour Lasers Use vapoured metal as a gain medium Developed by W. Silfvast (1966) Two types: Ionized Metal vapour (He-Cd) Neutral Metal vapour
Metal Vapour Lasers Use vapoured metal as a gain medium Developed by W. Silfvast (1966) Two types: Ionized Metal vapour (He-Cd) Neutral Metal vapour (Cu) All operate by vaporizing metal in container Helium
More informationIntraband emission of GaN quantum dots at λ =1.5 μm via resonant Raman scattering
Intraband emission of GaN quantum dots at λ =1.5 μm via resonant Raman scattering L. Nevou, F. H. Julien, M. Tchernycheva, J. Mangeney Institut d Electronique Fondamentale, UMR CNRS 8622, University Paris-Sud
More informationNonlinear optics with quantum-engineered intersubband metamaterials
Nonlinear optics with quantum-engineered intersubband metamaterials Mikhail Belkin Department of Electrical and Computer Engineering The University of Texas at Austin 1 Mid-infrared and THz photonics Electronics
More informationLuminescence basics. Slide # 1
Luminescence basics Types of luminescence Cathodoluminescence: Luminescence due to recombination of EHPs created by energetic electrons. Example: CL mapping system Photoluminescence: Luminescence due to
More informationMicro-coolers fabricated as a component in an integrated circuit
Micro-coolers fabricated as a component in an integrated circuit James Glover 1, Ata Khalid 2, Alex Stephen 3, Geoff Dunn 3, David Cumming 2 & Chris H Oxley 1 1Electronic Engineering Dept., Faculty of
More informationPressure and Temperature Dependence of Threshold Current in Semiconductor Lasers Based on InGaAs/GaAs Quantum-Well Systems
Vol. 112 (2007) ACTA PHYSICA POLONICA A No. 2 Proceedings of the XXXVI International School of Semiconducting Compounds, Jaszowiec 2007 Pressure and Temperature Dependence of Threshold Current in Semiconductor
More information1300nm-Range GaInNAs-Based Quantum Well Lasers with High Characteristic Temperature
3nm-Range GaInNAs-Based Quantum Well Lasers with High Characteristic Temperature by Hitoshi Shimizu *, Kouji Kumada *, Seiji Uchiyama * and Akihiko Kasukawa * Long wavelength- SQW lasers that include a
More informationMetal Vapour Lasers Use vapourized metal as a gain medium Developed by W. Silfvast (1966) Put metal in a cavity with a heater Vapourize metal, then
Metal Vapour Lasers Use vapourized metal as a gain medium Developed by W. Silfvast (1966) Put metal in a cavity with a heater Vapourize metal, then pump metal vapour with current Walter at TRG (1966) then
More informationEmission Spectra of the typical DH laser
Emission Spectra of the typical DH laser Emission spectra of a perfect laser above the threshold, the laser may approach near-perfect monochromatic emission with a spectra width in the order of 1 to 10
More informationOscillateur paramétrique optique en
C. Ozanam 1, X. Lafosse 2, I. Favero 1, S. Ducci 1, G. Leo 1 1 Université Paris Diderot, Sorbonne Paris Cité, Laboratoire MPQ, CNRS-UMR 7162, Paris, France, 2 Laboratoire de Photonique et Nanostructures,
More informationSample Grating Distributed Feedback Quantum Cascade Laser Array
Yan et al. Nanoscale Research Letters (2015) 10:406 DOI 10.1186/s11671-015-1115-9 NANO EXPRESS Open Access Sample Grating Distributed Feedback Quantum Cascade Laser Array FL Yan, JC Zhang *, CW Liu, N.
More informationQuantum cascade lasers with an integrated polarization mode converter
Quantum cascade lasers with an integrated polarization mode converter D. Dhirhe, 1,* T. J. Slight, 2 B. M. Holmes, 1 D. C. Hutchings, 1 and C. N. Ironside 1 1 School of Engineering, University of Glasgow,
More informationTemperature Dependent Optical Band Gap Measurements of III-V films by Low Temperature Photoluminescence Spectroscopy
Temperature Dependent Optical Band Gap Measurements of III-V films by Low Temperature Photoluminescence Spectroscopy Linda M. Casson, Francis Ndi and Eric Teboul HORIBA Scientific, 3880 Park Avenue, Edison,
More informationSegmented 1.55um Laser with 400% Differential Quantum Efficiency J. Getty, E. Skogen, L. Coldren, University of California, Santa Barbara, CA.
Segmented 1.55um Laser with 400% Differential Quantum Efficiency J. Getty, E. Skogen, L. Coldren, University of California, Santa Barbara, CA. Abstract: By electrically segmenting, and series-connecting
More informationTerahertz Lasers Based on Intersubband Transitions
Terahertz Lasers Based on Intersubband Transitions Personnel B. Williams, H. Callebaut, S. Kumar, and Q. Hu, in collaboration with J. Reno Sponsorship NSF, ARO, AFOSR,and NASA Semiconductor quantum wells
More informationInfrared Quantum Cascade Laser
Infrared Quantum Cascade Laser W. Schrenk, N. Finger, S. Gianordoli, L. Hvozdara, E. Gornik, and G. Strasser Institut für Festkörperelektronik, Technische Universität Wien Floragasse 7, 1040 Wien, Austria
More informationExternal cavity terahertz quantum cascade laser sources based on intra-cavity frequency
Home Search Collections Journals About Contact us My IOPscience External cavity terahertz quantum cascade laser sources based on intra-cavity frequency mixing with 1.2 5.9 THz tuning range This content
More informationDesign and simulation of deep-well GaAs-based quantum cascade lasers for 6.7 m room-temperature operation
JOURNAL OF APPLIED PHYSICS 102, 113107 2007 Design and simulation of deep-well GaAs-based quantum cascade lasers for 6.7 m room-temperature operation X. Gao, M. D Souza, D. Botez, and I. Knezevic a Department
More informationHow to measure packaging-induced strain in high-brightness diode lasers?
How to measure packaging-induced strain in high-brightness diode lasers? Jens W. Tomm Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie Berlin Max-Born-Str. 2 A, D-12489 Berlin, Germany
More informationOptical Investigation of the Localization Effect in the Quantum Well Structures
Department of Physics Shahrood University of Technology Optical Investigation of the Localization Effect in the Quantum Well Structures Hamid Haratizadeh hamid.haratizadeh@gmail.com IPM, SCHOOL OF PHYSICS,
More informationHigh characteristic temperature of 1.3 #m crescent buried heterostructure laser diodes
Bull. Mater. Sci., Vol. 11, No. 4, December 1988, pp. 291 295. Printed in India. High characteristic temperature of 1.3 #m crescent buried heterostructure laser diodes Y K SU and T L CHEN Institute of
More informationStructural and Optical Properties of III-III-V-N Type
i Structural and Optical Properties of III-III-V-N Type Alloy Films and Their Quantum Wells ( III-III-V- N 型混晶薄膜および量子井戸の構造的および光学的性質 ) This dissertation is submitted as a partial fulfillment of the requirements
More informationChapter 5. Semiconductor Laser
Chapter 5 Semiconductor Laser 5.0 Introduction Laser is an acronym for light amplification by stimulated emission of radiation. Albert Einstein in 1917 showed that the process of stimulated emission must
More informationGaN-based Devices: Physics and Simulation
GaN-based Devices: Physics and Simulation Joachim Piprek NUSOD Institute Collaborators Prof. Shuji Nakamura, UCSB Prof. Steve DenBaars, UCSB Dr. Stacia Keller, UCSB Dr. Tom Katona, now at S-ET Inc. Dr.
More informationSelf-Assembled InAs Quantum Dots
Self-Assembled InAs Quantum Dots Steve Lyon Department of Electrical Engineering What are semiconductors What are semiconductor quantum dots How do we make (grow) InAs dots What are some of the properties
More informationTerahertz sensing and imaging based on carbon nanotubes:
Terahertz sensing and imaging based on carbon nanotubes: Frequency-selective detection and near-field imaging Yukio Kawano RIKEN, JST PRESTO ykawano@riken.jp http://www.riken.jp/lab-www/adv_device/kawano/index.html
More informationBallistic Electron Spectroscopy of Quantum Mechanical Anti-reflection Coatings for GaAs/AlGaAs Superlattices
Ballistic Electron Spectroscopy of Quantum Mechanical Anti-reflection Coatings for GaAs/AlGaAs Superlattices C. Pacher, M. Kast, C. Coquelin, G. Fasching, G. Strasser, E. Gornik Institut für Festkörperelektronik,
More informationElectronic thermal transport in nanoscale metal layers
Electronic thermal transport in nanoscale metal layers David Cahill, Richard Wilson, Wei Wang, Joseph Feser Department of Materials Science and Engineering Materials Research Laboratory University of Illinois
More informationWavelength Stabilized High-Power Quantum Dot Lasers
Wavelength Stabilized High-Power Quantum Dot Lasers Johann Peter Reithmaier Technische Physik, Institute of Nanostructure Technologies & Analytics () Universität Kassel, Germany W. Kaiser, R. Debusmann,
More informationBroadly tunable terahertz differencefrequency generation in quantum cascade lasers on silicon
Broadly tunable terahertz differencefrequency generation in quantum cascade lasers on silicon Seungyong Jung Jae Hyun Kim Yifan Jiang Karun Vijayraghavan Mikhail A. Belkin Seungyong Jung, Jae Hyun Kim,
More informationWidely Tunable and Intense Mid-Infrared PL Emission from Epitaxial Pb(Sr)Te Quantum Dots in a CdTe Matrix
Widely Tunable and Intense Mid-Infrared PL Emission from Epitaxial Pb(Sr)Te Quantum Dots in a Matrix S. Kriechbaumer 1, T. Schwarzl 1, H. Groiss 1, W. Heiss 1, F. Schäffler 1,T. Wojtowicz 2, K. Koike 3,
More informationLaser Diodes. Revised: 3/14/14 14: , Henry Zmuda Set 6a Laser Diodes 1
Laser Diodes Revised: 3/14/14 14:03 2014, Henry Zmuda Set 6a Laser Diodes 1 Semiconductor Lasers The simplest laser of all. 2014, Henry Zmuda Set 6a Laser Diodes 2 Semiconductor Lasers 1. Homojunction
More informationEpitaxial Growth of InGaAs and InAlAs
High Growth Temperature Studies of InGaAs/InAlAs Superlattices for High-Quality QCL and QWIP Applications Jiun-Yun Li (a) Fow-Sen Choa, Xiaoming Ji, and Liwei Cheng Department of CSEE University of Maryland
More informationABSTRACT 1. INTRODUCTION 2. EXPERIMENT
Fabrication of Nanostructured Heterojunction LEDs Using Self-Forming Moth-Eye Type Arrays of n-zno Nanocones Grown on p-si (111) Substrates by Pulsed Laser Deposition D. J. Rogers 1, V. E. Sandana 1,2,3,
More informationinterband transitions in semiconductors M. Fox, Optical Properties of Solids, Oxford Master Series in Condensed Matter Physics
interband transitions in semiconductors M. Fox, Optical Properties of Solids, Oxford Master Series in Condensed Matter Physics interband transitions in quantum wells Atomic wavefunction of carriers in
More informationSurface compositional gradients of InAs/GaAs quantum dots
Surface compositional gradients of InAs/GaAs quantum dots S. Heun, G. Biasiol, V. Grillo, E. Carlino, and L. Sorba Laboratorio Nazionale TASC INFM-CNR, I-34012 Trieste, Italy G. B. Golinelli University
More informationTransient Harman Measurement of the Cross-plane ZT of InGaAs/InGaAlAs Superlattices with Embedded ErAs Nanoparticles
Transient Harman Measurement of the Cross-plane ZT of InGaAs/InGaAlAs Superlattices with Embedded ErAs Nanoparticles Rajeev Singh, Zhixi Bian, Gehong Zeng, Joshua Zide, James Christofferson, Hsu-Feng Chou,
More informationNon-equilibrium Green s functions: Rough interfaces in THz quantum cascade lasers
Non-equilibrium Green s functions: Rough interfaces in THz quantum cascade lasers Tillmann Kubis, Gerhard Klimeck Department of Electrical and Computer Engineering Purdue University, West Lafayette, Indiana
More informationCrystal Properties. MS415 Lec. 2. High performance, high current. ZnO. GaN
Crystal Properties Crystal Lattices: Periodic arrangement of atoms Repeated unit cells (solid-state) Stuffing atoms into unit cells Determine mechanical & electrical properties High performance, high current
More information1.5 μm InAs/InGaAsP/InP quantum dot laser with improved temperature stability
Journal of Physics: Conference Series PAPER OPEN ACCESS 1.5 μm InAs/InGaAsP/InP quantum dot laser with improved temperature stability To cite this article: F I Zubov et al 2016 J. Phys.: Conf. Ser. 741
More informationTransient lattice dynamics in fs-laser-excited semiconductors probed by ultrafast x-ray diffraction
Transient lattice dynamics in fs-laser-excited semiconductors probed by ultrafast x-ray diffraction K. Sokolowski-Tinten, M. Horn von Hoegen, D. von der Linde Inst. for Laser- and Plasmaphysics, University
More informationPhotoluminescence characterization of AlGaAs/GaAs test superlattices used for optimization of quantum cascade laser technology
Optica Applicata, Vol. XXXIX, No. 4, 2009 Photoluminescence characterization of AlGaAs/GaAs test superlattices used for optimization of quantum cascade laser technology ANNA WÓJCIK-JEDLIŃSKA 1*, MICHAŁ
More informationBroadband Quantum-Dot/Dash Lasers
Broadband Quantum-Dot/Dash Lasers Boon S. Ooi, Electrical & Computer Eng. Lehigh University Tel: 610-758 2606, email:bsooi@lehigh.edu ACKNOWDLEDGEMENT Students and Postdoc: Hery S. Djie, Yang Wang, Clara
More informationOPTI510R: Photonics. Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626
OPTI510R: Photonics Khanh Kieu College of Optical Sciences, University of Arizona kkieu@optics.arizona.edu Meinel building R.626 Announcements HW#3 is assigned due Feb. 20 st Mid-term exam Feb 27, 2PM
More informationELECTRONIC STRUCTURE OF InAs/GaAs/GaAsSb QUANTUM DOTS
ELECTRONIC STRUCTURE OF InAs/GaAs/GaAsSb QUANTUM DOTS Josef HUMLÍČEK a,b, Petr KLENOVSKÝ a,b, Dominik MUNZAR a,b a DEPT. COND. MAT. PHYS., FACULTY OF SCIENCE, Kotlářská 2, 611 37 Brno, Czech Republic b
More informationTHz experiments at the UCSB FELs and the THz Science and Technology Network.
THz experiments at the UCSB FELs and the THz Science and Technology Network. Mark Sherwin UCSB Physics Department and Institute for Quantum and Complex Dynamics UCSB Center for Terahertz Science and Technology
More informationElectron Energy, E E = 0. Free electron. 3s Band 2p Band Overlapping energy bands. 3p 3s 2p 2s. 2s Band. Electrons. 1s ATOM SOLID.
Electron Energy, E Free electron Vacuum level 3p 3s 2p 2s 2s Band 3s Band 2p Band Overlapping energy bands Electrons E = 0 1s ATOM 1s SOLID In a metal the various energy bands overlap to give a single
More informationTowards Si-based Light Sources. Greg Sun University of Massachusetts Boston
Towards Si-based Light Sources Greg Sun University of Massachusetts Boston UMass System Amherst, Boston, Lowell, Dartmouth Worcester (Medical school) UMass Boston UMass Boston Established in 1964 Only
More informationOptical Characterization of Self-Assembled Si/SiGe Nano-Structures
Optical Characterization of Self-Assembled Si/SiGe Nano-Structures T. Fromherz, W. Mac, G. Bauer Institut für Festkörper- u. Halbleiterphysik, Johannes Kepler Universität Linz, Altenbergerstraße 69, A-
More informationWavelength extension of GaInAs/GaIn(N)As quantum dot structures grown on GaAs
PUBLICATION V Journal of Crystal Growth 248 (2003) 339 342 Wavelength extension of GaInAs/GaIn(N)As quantum dot structures grown on GaAs T. Hakkarainen*, J. Toivonen, M. Sopanen, H. Lipsanen Optoelectronics
More information3.46 PHOTONIC MATERIALS AND DEVICES Lecture 15: III-V Processing
3.46 PHOTONIC MATERIALS AND DEVICES 15: III-V Processing Double Hetero structure laser (band structure engineering) AlGaAs GaAs AlGaAs e - E n hν P h + X n x I d < 1 μm 1. Large refractive index active
More informationOne-dimensional excitons in GaAs quantum wires
J. Phys.: Condens. Matter 10 (1998) 3095 3139. Printed in the UK PII: S0953-8984(98)82817-8 REVIEW ARTICLE One-dimensional excitons in GaAs quantum wires Hidefumi Akiyama Institute for Solid State Physics
More informationComparison of the 3ω method and time-domain
Comparison of the 3ω method and time-domain thermoreflectance David G. Cahill, Shawn Putnam, Yee Kan Koh Materials Research Lab and Department of Materials Science and Engineering, U. of Illinois, Urbana,
More informationLEC E T C U T R U E R E 17 -Photodetectors
LECTURE 17 -Photodetectors Topics to be covered Photodetectors PIN photodiode Avalanche Photodiode Photodetectors Principle of the p-n junction Photodiode A generic photodiode. Photodetectors Principle
More informationThermal Transport in Graphene and other Two-Dimensional Systems. Li Shi. Department of Mechanical Engineering & Texas Materials Institute
Thermal Transport in Graphene and other Two-Dimensional Systems Li Shi Department of Mechanical Engineering & Texas Materials Institute Outline Thermal Transport Theories and Simulations of Graphene Raman
More informationBarrier Photodetectors for High Sensitivity and High Operating Temperature Infrared Sensors
Barrier Photodetectors for High Sensitivity and High Operating Temperature Infrared Sensors Philip Klipstein General Review of Barrier Detectors 1) Higher operating temperature, T OP 2) Higher signal to
More informationρ ρ LED access resistances d A W d s n s p p p W the output window size p-layer d p series access resistance d n n-layer series access resistance
LED access resistances W the output window size p-layer series access resistance d p n-layer series access resistance d n The n-layer series access resistance R = ρ s n where the resistivity of the n-layer
More informationSpectromicroscopic investigations of semiconductor quantum dots. Stefan Heun, Laboratorio TASC INFM-CNR, Trieste, Italy.
Spectromicroscopic investigations of semiconductor quantum dots Stefan Heun, Laboratorio TASC INFM-CNR, Trieste, Italy. Motivation Quantum Dot Applications based on their particular electronic properties
More information3-1-1 GaAs-based Quantum Cascade Lasers
3 Devices 3-1 Oscillator 3-1-1 GaAs-based Quantum Cascade Lasers Quantum cascade lasers (QCLs) have different structures and characteristics from those of conventional semiconductor lasers commonly used
More informationDr. Maria-Alexandra PAUN
Performance comparison of Hall Effect Sensors obtained by regular bulk or SOI CMOS technology Dr. Maria-Alexandra PAUN Visiting Researcher High Voltage Microelectronics and Sensors (HVMS) Group, Department
More informationCarrier Dynamics in Quantum Cascade Lasers
Vol. 107 (2005) ACTA PHYSICA POLONICA A No. 1 Proceedings of the 12th International Symposium UFPS, Vilnius, Lithuania 2004 Carrier Dynamics in Quantum Cascade Lasers P. Harrison a, D. Indjin a, V.D. Jovanović
More informationELECTRONIC DEVICES AND CIRCUITS SUMMARY
ELECTRONIC DEVICES AND CIRCUITS SUMMARY Classification of Materials: Insulator: An insulator is a material that offers a very low level (or negligible) of conductivity when voltage is applied. Eg: Paper,
More informationSUPPLEMENTARY INFORMATION
DOI: 1.138/NPHOTON.214.8 Supplementary Information Tunable hot-carrier photodetection beyond the band-gap spectral limit Yan-Feng Lao 1, A. G. Unil Perera 1, L. H. Li 2, S. P. Khanna 2, E. H. Linfield
More informationsolidi current topics in solid state physics InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates
solidi status physica pss c current topics in solid state physics InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates M. Zervos1, C. Xenogianni1,2, G. Deligeorgis1, M. Androulidaki1,
More informationThermal performance investigation of DQW GaInNAs laser diodes
Thermal performance investigation of DQW GaInNAs laser diodes Jun Jun Lim, Roderick MacKenzie, Slawomir Sujecki, Eric Larkins Photonic and Radio Frequency Engineering Group, School of Electrical and Electronic
More informationIntroduction to optical waveguide modes
Chap. Introduction to optical waveguide modes PHILIPPE LALANNE (IOGS nd année) Chapter Introduction to optical waveguide modes The optical waveguide is the fundamental element that interconnects the various
More informationPseudomorphic HEMT quantum well AlGaAs/InGaAs/GaAs with AlAs:δ-Si donor layer
IOP Conference Series: Materials Science and Engineering PAPER OPEN ACCESS Pseudomorphic HEMT quantum well AlGaAs/InGaAs/GaAs with AlAs:δ-Si donor layer Related content - Pseudomorphic HEMT with Sn nanowires
More informationTHE terahertz (THz) region ( THz) of the electromagnetic
952 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 15, NO. 3, MAY/JUNE 2009 High-Temperature Operation of Terahertz Quantum Cascade Laser Sources Mikhail A. Belkin, Member, IEEE, Qi Jie Wang,
More informationGISAXS, GID and X-Ray Reflectivity in Materials Science
united nations educational, scientific and cultural organization the abdus salam international centre for theoretical physics international atomic energy agency SCHOOL ON SYNCHROTRON RADIATION AND APPLICATIONS
More informationSelf-study problems and questions Processing and Device Technology, FFF110/FYSD13
Self-study problems and questions Processing and Device Technology, FFF110/FYSD13 Version 2016_01 In addition to the problems discussed at the seminars and at the lectures, you can use this set of problems
More informationDesign and Characterization of InGaAsP/InP and In(Al)GaAsSb/GaSb Laser Diode Arrays
Design and Characterization of InGaAsP/InP and In(Al)GaAsSb/GaSb Laser Diode Arrays A Dissertation Presented by Alexandre Gourevitch to The Graduate School in Partial fulfillment of the Requirements for
More informationLocal Anodic Oxidation of GaAs: A Nanometer-Scale Spectroscopic Study with PEEM
Local Anodic Oxidation of GaAs: A Nanometer-Scale Spectroscopic Study with PEEM S. Heun, G. Mori, M. Lazzarino, D. Ercolani, G. Biasiol, and L. Sorba Laboratorio TASC-INFM, 34012 Basovizza, Trieste A.
More informationTHz QCL sources for operation above cryogenic temperatures Mikhail Belkin
THz QCL sources for operation above cryogenic temperatures Mikhail Belkin Department of Electrical and Computer Engineering University of Texas at Austin IQCLSW, Monte Verita, Switzerland 008 Need for
More informationGain competition in dual wavelength quantum cascade lasers
Gain competition in dual wavelength quantum cascade lasers Markus Geiser, 1, 4 Christian Pflügl, 1,* Alexey Belyanin, 2 Qi Jie Wang, 1 Nanfang Yu, 1 Tadanaka Edamura, 3 Masamichi Yamanishi, 3 Hirofumi
More informationGCEP Symposium 5 October 2011 HOT CARRIER SOLAR CELLS
GCEP Symposium 5 October 2011 HOT CARRIER SOLAR CELLS Gavin Conibeer - Photovoltaics Centre of Excellence, UNSW Robert Patterson, Pasquale Aliberti, Shujuan Huang, Yukiko Kamakawa, Hongze Xia, Dirk König,
More informationOptical and Terahertz Characterization of Be-Doped GaAs/AlAs Multiple Quantum Wells
Vol. 107 (2005) ACTA PHYSICA POLONICA A No. 2 Proceedings of the 12th International Symposium UFPS, Vilnius, Lithuania 2004 Optical and Terahertz Characterization of Be-Doped GaAs/AlAs Multiple Quantum
More informationGaN based transistors
GaN based transistors S FP FP dielectric G SiO 2 Al x Ga 1-x N barrier i-gan Buffer i-sic D Transistors "The Transistor was probably the most important invention of the 20th Century The American Institute
More informationClassification of Solids
Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples
More informationSimple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n-type GaAs epitaxial layer structures
Presented at ISCS21 June 4, 21 Session # FrP3 Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n-type GaAs epitaxial layer structures Hideo
More informationVertically Emitting Microdisk Lasers
Excerpt from the Proceedings of the COMSOL Conference 008 Hannover Vertically Emitting Microdisk Lasers Lukas Mahler *,1, Alessandro Tredicucci 1 and Fabio Beltram 1 1 NEST-INFM and Scuola Normale Superiore,
More informationUniversity of California Postprints
University of California Postprints Year 2007 Paper 2192 Cross-plane Seebeck coefficient of ErAs : InGaAs/InGaAlAs superlattices G H. Zeng, JMO Zide, W Kim, J E. Bowers, A C. Gossard, Z X. Bian, Y Zhang,
More information