CURRICULUM VITAE OF ALESSANDRO PECCHIA
|
|
- Ferdinand Nichols
- 5 years ago
- Views:
Transcription
1 CURRICULUM VITAE OF ALESSANDRO PECCHIA Academic Degrees 1/10/ /03/1998 Degree in Physics, Univ. of Trieste (110/110 cum laude). 1/11/ /11/2001 PhD in Leeds, UK (F.W. Carter Prize as Best 2002 Thesis) Professional Career 6/09/ now CNR-ISMN Researcher. 16/2/ /09/2010 CNR-INFM/CNISM Researcher with permanent position. 01/9/ /2/2009 CNR-INFM Researcher. 1/12/ /8/2003 Post-Doc in the group of Prof. P. Lugli at the Univ. of Roma Tor Vergata Professor of Nanoelettronics at Electronics Engineering, Univ. of Tor Vergata now Professor of Computational Physics at Physics, Univ. of Tor Vergata. Stipends and Awards 18/10/ /11/2015 Dresden Fellowship 25/09/ /11/2014 Dresden Fellowship 22/08/ /09/2013 Visiting Professor at the University of Bremen. 1/07/ /07/2012 Vielberth foundation grant for visiting scientist at University of Regensburg. 01/07/ /07/2011 Visiting Scientist at the University of Granada. 22/01/ /02/2007 Visiting Professor at the University of Bremen. 01/4/ /4/2005 Vielberth foundation grant for visiting scientist at University of Regensburg. 22/10/ /12/2003 Visiting scientist at the University of Paderborn. Scientific Board and consultant of Tiberlab S.r.l. since 2009 University of Leeds, F.W. Carter prize as 'best PhD thesis of 2002'. Dr. Alessandro Pecchia has a strong and world-recognized experience in quantum-transport at molecular and nanoscale. He received his PhD in Electronics Engineering, with honors, from the University of Leeds and was awarded the F.W. Carter prize as 'best PhD thesis of 2002'. The work was a multidisciplinary interaction between physicists, chemists and engineers working on the development of novel hybrid organic-inorganic interfaces. Dr. Pecchia was involved in the theoretical modeling of these systems. He spent 12 months as a PostDoc at the University of 'Tor Vergata' after which he won a long tenure contract of five years within INFM institute (CNR-INFM since 2005). In February 2009 he got a permanent position in CNR-INFM and in September 2010 he moved to CNR-ISMN. Since his PhD, his main research focuses on multidisciplinary fields studying organic and inorganic interactions and quantum transport in nanoscale devices and molecular electronics, as well as opto-electronic properties of quantumdots and nanowires. Since 2003 he has been developing the general purpose tool gdftb for transport in nano and molecular systems, based on an atomistic tight-binding description and the non-equilibrium Green s function method. The gdftb code is currently used by several groups through international collaborations. The code has been applied to compute device characteristics of CNT-FETs and SiNW FETs and more recently grapheme and MoS transistors. The principal current activity of research is on molecular transport, including electron-phonon scattering and thermal dissipation models. Since 2008 he has been strongly involved in the development of TiberCAD, an atomistic/fem multiscale simulation tool for transport in opto-electronic devices and hybrid organic-inorganic devices developed in the group of Prof. Aldo Di Carlo at Univ. of Tor Vergata. Main working topics: - Transport in metals and semiconductors and diffusive transport in organic materials - Hybrid organic/inorganic interfaces - Electronic transport in nanostructures CNT FETs and inorganic Si nanowire FETs - Electron-vibration scattering effects and heat dissipation at the nanoscale - Development of atomistic TB methods for optoelectronic devices - Optoelectronic properties of nanostructures and quantum dots - Multiscale transport 1
2 Invited and contributing talks Average of 2 invitations per year at national and international congresses since 2006 (most relevant: APS March Meeting, Baltimore 13-17/3/ 2006; COMP-DFTB session of ACS meeting, S. Francisco 10-15/9/2006; CECAM-HQ-EPFL, Lausanne, 2-5/06/2009, IEEE-NANO Hong Kong 1-3/08/2007, Optics and Photonic session of SPIE, San Diego 13-15/8/2006; Progress on Non Equilibrium Green s Function III, Kiel 20-23/8/2005; IWCE 13 Massachusetts 13-15/10/2007; Atmol workshop, Barcelona 2012, Workshop on inelastic transport, San Sebastian 2010, CECAM workshops) Referee activity Regular reviewer for several journals among which Physical Review B and Physical Review Letters, J Computational Electronics, Microelectronics Engineering, J Chem Phys Letters. Referee of international projects: European Research Council FET-Open, German DFG Individual Grant Applications, Cyprus Research Council Publications: 54 peer-reviewed papers with 1000 citations, h-index 18 (ISI), 21 (Google Scholar) Books: He has co-authored 4 book chapters in molecular and nano-electronics Publications M. Auf der Maur, A. PECCHIA, W. Rodrigues, G. Penazzi, A. Di Carlo, Efficiency drop in green InGaN/GaN light emitting diodes: The role of random alloy fluctuations, Accepted by Phys. Rev. Lett. (2015) A. PECCHIA, D. Gentilini, D. Rossi, M. Auf der Maur, A. Di Carlo, The Role of Ferroelectric Nanodomains in the Transport Properties of Perovskite Solar Cells, Accepted by Nano Letters (2015) Rodrigues Walter, PECCHIA A., Lopez M, Auf der Maur M, Di Carlo A. (2014). Accelerating atomistic calculations of quantum energy eigenstates on graphic cards. COMPUTER PHYSICS COMMUNICATIONS, vol. 185; p , ISSN: , doi: /j.cpc Barettin D, De Angelis R, Prosposito P, Auf der Maur M, Casalboni M, PECCHIA A. (2014). Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy results. ISRN NANOTECHNOLOGY, vol. 25; p , ISSN: , doi: / /25/19/ Lykkebo J, Gagliardi A, PECCHIA A., Solomon G (2014). IETS and quantum interference: Propensity rules in the presence of an interference feature. THE JOURNAL OF CHEMICAL PHYSICS, vol. 141; p , ISSN: , doi: IETS and quantum interference: Propensity rules in the presence of an interference feature Barettin D, Platonov A, PECCHIA A., Kats V, Cirlin G, Soshnikov I, Bouravleuv A, Besombes L, Mariette H, Auf der Maur M, Di Carlo A (2013). Model of a GaAs Quantum Dot Embedded in a Polymorph AlGaAs Nanowire. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, vol. 19; p. 1-2, ISSN: X, doi: /JSTQE Penazzi G, Carlsson JM, Diedrich C, Olf G, PECCHIA A., Frauenheim T (2013). Atomistic Modeling of Charge Transport across a Carbon Nanotube Polyethylene Junction. JOURNAL OF PHYSICAL CHEMISTRY. C., vol. 117; p , ISSN: , doi: /jp312381k Lykkebo J, Gagliardi A, PECCHIA A., Solomon G (2013). Strong Overtones Modes in Inelastic Electron Tunneling Spectroscopy with Cross-Conjugated Molecules: A Prediction from Theory. ACS NANO, vol. 7; p , ISSN: , doi: /nn Auf der Maur M, PECCHIA A., Penazzi G, Sacconi F, Di Carlo A (2013). Coupling atomistic and continuous media models for electronic device simulation. JOURNAL OF COMPUTATIONAL ELECTRONICS, vol. 12; p , ISSN: , doi: /s Sacconi F, Auf der Maur M, PECCHIA A., Lopez M, Di Carlo A (2012). Optoelectronic properties of nanocolumnar InGaN/GaN quantum disk LEDs. PHYSICA STATUS SOLIDI. C, CURRENT TOPICS IN SOLID STATE PHYSICS, vol. 9; p , ISSN: , doi: /pssc Lopez M, Sacconi F, Auf der Maur M, PECCHIA A., Di Carlo A (2012). Atomistic simulation of InGaN/GaN quantum disk LEDs. In: Proceedings of NUSOD conference, p. 1-6, doi: /s Lopez M, Sacconi F, Auf Der Maur M, PECCHIA A., Di Carlo A (2012). Atomistic simulation of InGaN/GaN quantum disk LEDs. OPTICAL AND QUANTUM ELECTRONICS, vol. 44; p , ISSN: , doi: /s Barettin D, PECCHIA A., Penazzi G, M auf Der Maur, Lassen B, Willatzen M, Di Carlo A (2011). Comparison of continuum and atomistic methods for the analysis of InAs/GaAs quantum dots. In: Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD. Roma, 5-8/9/2011, p , doi: /NUSOD
3 Auf der Maur M, Penazzi G, Romano G, Sacconi F, PECCHIA A., Di Carlo A (2011). The Multiscale Paradigm in Electronic Device Simulation. IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 58; p , ISSN: , doi: /TED G. PENAZZI, PECCHIA A., F. SACCONI, AND A. DI CARLO (2010). Calculation of optical properties of a quantum dot embedded in a gan/algan nanocolumn. In: Superlattices and Microstructures, vol. 47, p Gagliardi A, Romano G, PECCHIA A., Di Carlo A (2010). Simulation of Inelastic Scattering in Molecular Junctions: Application to Inelastic Electron Tunneling Spectroscopy and Dissipation Effects. JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, vol. 7; p , ISSN: , doi: Penazzi G, PECCHIA A., Sacconi F, Di Carlo A (2010). Calculation of optical properties of a quantum dot embedded in a GaN/AlGaN nanocolumn. SUPERLATTICES AND MICROSTRUCTURES, vol. 47; p , ISSN: , doi: /j.spmi G. ROMANO, A. GAGLIARDI, PECCHIA A. (2010). Heating and cooling mechanisms in single-molecule junctions. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, vol. 81; p , ISSN: , doi: /PhysRevB M. AUF DER MAUR, F. SACCONI, G. PENAZZI, M. POVOLOTSKYI, G. ROMANO, PECCHIA A. (2010). Coupling atomistic and finite element approaches for the simulation of optoelectronic devices. OPTICAL AND QUANTUM ELECTRONICS, vol. 41; p , ISSN: , doi: /s M Auf der Maur, F Sacconi, G Penazzi, G Romano, M Povolotskyi, PECCHIA A., Di Carlo A (2010). Concurrent multiscale simulation of electronic devices. JOURNAL OF COMPUTATIONAL ELECTRONICS, vol. 9; p , ISSN: , doi: /s x Romano G, Auf der Maur M, Di Carlo A, PECCHIA A. (2010). Handshaking multiscale thermal model of nanostructured devices. In: Computational Electronics (IWCE), th International Workshop on, p. 1-4, doi: /IWCE PECCHIA A., Penazzi G, Di Carlo A (2010). Point defect scattering in silicon nanowires. In: Computational Electronics (IWCE), th International Workshop on, p. 1-4, doi: /IWCE Auf Der Maur M, Sacconi F, Penazzi G, Povolotskyi M, Romano G, PECCHIA A., Di Carlo A (2009). Coupling atomistic and finite element approaches for the simulation of optoelectronic devices. OPTICAL AND QUANTUM ELECTRONICS, vol. 41; p , ISSN: , doi: /s MATTHIAS AUF DER MAUR, MICHAEL POVOLOTSKYI, FABIO SACCONI, PECCHIA A., GIUSEPPE ROMANO, GABRIELE PENAZZI, AND ALDO DI CARLO (2009). Tibercad: Towards multiscale simulation of optoelectronic devices. OPTICAL AND QUANTUM ELECTRONICS, vol. 40; p , ISSN: , doi: /s A GAGLIARDI, G ROMANO, PECCHIA A., T A NIEHAUS, TH FRAUENHEIM, A. DI CARLO (2008). Electron phonon scattering in molecular electronics: from inelastic electron tunnelling spectroscopy to heating effects. NEW JOURNAL OF PHYSICS, vol. 10; p , ISSN: A GAGLIARDI, G C SOLOMON, PECCHIA A. (2008). A priori method for propensity rules for inelastic electron tunneling spectroscopy of single-molecule conduction. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, vol. 75; p , ISSN: M. AUF DER MAUR, M. POVOLOTSKYI, F. SACCONI, PECCHIA A., G. ROMANO, G. PENAZZI, A. DI CARLO (2008). TiberCAD: Towards multiscale simulations of optoelectronic devices. In: Proceedings of NUSOD08, Numerical Simulations of Optoelectronic Devices. Nottingham, Sept I. POPOV, PECCHIA A., S.OKANO, N. RANJAN, A. DI CARLO AND G. SEIFERT (2008). Electronic and transport properties of contacts between molybdenum sulfide nanowires and gold electrodes. APPLIED PHYSICS LETTERS, vol. 93; p , ISSN: G. SCHULZE, K. J. FRANKE, A. GAGLIARDI, G. ROMANO, C. S. LIN, A. L. ROSA, T. A. NIEHAUS, AND TH. FRAUENHEIM, G. ROMANO, PECCHIA A., A. DI CARLO (2008). Resonant Electron Heating and Molecular Phonon Cooling in Single C60 Junctions. PHYSICAL REVIEW LETTERS, vol. 100; p , ISSN: PECCHIA A., L.SALVUCCI, G. PENAZZI, A. DI CARLO (2008). Non-equilibrium Green 's functions in density functional tight binding: method and applications. NEW JOURNAL OF PHYSICS, vol. 10; p , ISSN: Auf der Maur M, Povolotskyi M, Sacconi F, PECCHIA A., Di Carlo A (2008). Multiscale simulation of MOS systems based on high- oxides. JOURNAL OF COMPUTATIONAL ELECTRONICS, vol. 7; p , ISSN: , doi: /s F. SACCONI, M. P. PERSSON, M. POVOLOTSKYI, L. LATESSA, PECCHIA A., A. GAGLIARDI, A. BALINT, T. FRAUNHEIM AND A. DI CARLO (2007). Electronic and transport properties of silicon nanowires. JOURNAL OF COMPUTATIONAL ELECTRONICS, vol. 6; p. 329, ISSN:
4 P. LUGLI, C. ERLEN, PECCHIA A., F. BRUNETTI, L. LATESSA, A. BOLOGNESI, G. CSABA, G. SCARPA AND A. DI CARLO (2007). Quasiparticle correction for electronic transport in molecular wires, J. of Comp. Electronics. JOURNAL OF COMPUTATIONAL ELECTRONICS, vol. 6; p. 345, ISSN: G.ROMANO, PECCHIA A., A. DI CARLO (2007). Coupling molecular vibrons with contact phonons reservoirs. JOURNAL OF PHYSICS. CONDENSED MATTER, vol. 19; p , ISSN: PECCHIA A., L. SALAMANDRA, L. LATESSA, B. ARADI, T. FRAUENHEIM, A. DI CARLO (2007). Atomistic Modeling of Gate-All-Around Si-Nanowire Field Effect Transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 54; p. 3159, ISSN: C ERLEN, P LUGLI, PECCHIA A., A DI CARLO (2007). Simulation Tools in Molecular Electronics. CRC Handbooks in molecular and nano electronics. p. 19-1, CRC PECCHIA A., L. LATESSA, A. GAGLIARDI, TH. FRAUENHEIM, A. DI CARLO (2007). The gdftb tool for molecular electronics. Molecular and Nano Electronics: Analysis, Design and Simulation. Elsevier, ISBN/ISSN: , doi: /S (07) Reimers J R, Solomon GC, Gagliardi A, Bilic A, Hush NS, Frauenheim T, Di Carlo A, PECCHIA A. (2007). The green's function density functional tight (gdftb) method for molecular electronic conduction. JOURNAL OF PHYSICAL CHEMISTRY. A, MOLECULES, SPECTROSCOPY, KINETICS, ENVIRONMENT, & GENERAL THEORY, vol. 111; p , ISSN: , doi: /jp070598y PECCHIA A., Romano G, Gagliardi A, Frauenheim Th, Di Carlo A (2007). Heat dissipation and non-equilibrium phonon distributions in molecular devices. JOURNAL OF COMPUTATIONAL ELECTRONICS, vol. 6; p , ISSN: , doi: /s PECCHIA A., G.ROMANO, A. DI CARLO (2007). Theory of heat dissipation in molecular junctions. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, vol. 75; p , ISSN: Di Carlo A, PECCHIA A., Petrolati E, Paoloni C (2006). Modelling of carbon nano tube-based devices: From nanofets to THz emitters. In: Proceedings of SPIE - The International Society for Optical Engineering, vol. 6328, ISBN/ISSN: , doi: / L. LATESSA, PECCHIA A., A. DI CARLO (2006). DFT modeling of bulk-modulated carbon nanotube field-effect transistors. IEEE TRANSACTIONS ON NANOTECHNOLOGY, vol. 6; p , ISSN: X G. C. SOLOMON, A. GAGLIARDI, PECCHIA A., TH. FRAUENHEIM, A. DI CARLO, J.R. REIMERS, N.S. HUSH (2006). The symmetry of single-molecule conduction. THE JOURNAL OF CHEMICAL PHYSICS, vol. 125; p , ISSN: G. C. SOLOMON, A. GAGLIARDI, PECCHIA A., TH. FRAUENHEIM, A. DI CARLO, J.R. REIMERS, N.S. HUSH (2006). Understanding the inelastic electron tunnelling spectra of alkanedithiols on gold. THE JOURNAL OF CHEMICAL PHYSICS, vol. 124; p , ISSN: A. DI CARLO, PECCHIA A., E. PETROLATI, C. PAOLONI (2006). Modelling of carbon nano tube-based devices: From nanofets to THz emitters. In: Proceedings of SPIE. San Diego, 2006, p G C SOLOMON, A. GAGLIARDI, PECCHIA A. (2006). Molecular origins of conduction channels observed in shot-noise measurements. NANO LETTERS, vol. 6; p. 2431, ISSN: PECCHIA A., Di Carlo A, Gagliardi A, Niehaus T, Frauenheim T (2005). Atomistic simulation of the electronic transport in organic nanostructures: Electron-phonon and electron-electron interactions. JOURNAL OF COMPUTATIONAL ELECTRONICS, vol. 4; p , ISSN: , doi: /s y Latessa L, PECCHIA A., Di Carlo A, Lugli P (2005). Quantum capacitance effects in carbon nanotube field-effect devices. JOURNAL OF COMPUTATIONAL ELECTRONICS, vol. 4; p , ISSN: , doi: /s M. GHEORGHE, R. GUTIERREZ, N. RANJAN, PECCHIA A., A. DI CARLO, G. CUNIBERTI (2005). Vibrational effects in the linear conductance of carbon nanotubes. EUROPHYSICS LETTERS, vol. 71; p. 438, ISSN: A. DI CARLO, PECCHIA A., L. LATESSA, T. FRAUENHEIM, G. SEIFERT (2005). Tight-binding DFT for molecular electronics (gdftb). Introducing molecular electronics. p ,, doi: / _6 A. DI CARLO, PECCHIA A. (2005). Microscopic description of molecular devices. In: A. D'AMICO E A. PAOLETTI. From Nanostructures to Nanosensing Applications, Proceedings of the International School of Physics. p , IOS Press PECCHIA A., L.LATESSA, A. DI CARLO, P. LUGLI (2005). Negative quantum capacitance of gated carbon nanotubes. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, vol. 72; p , ISSN: PECCHIA A., A. DI CARLO, A. GAGLIARDI, TH. FRAUENHEIM, R. GUTIERREZ (2004). Incoherent electron-phonon scattering in octanethiols. NANO LETTERS, vol. 4; p. 2109, ISSN: PECCHIA A., A. DI CARLO (2004). Atomistic theory of transport in organic and inorganic nanostructures. REPORTS ON PROGRESS IN PHYSICS, vol. 67; p. 1497, ISSN:
5 P. LUGLI, PECCHIA A., M.GHEORGHE, L. LATESSA, A. DI CARLO (2004). Electronic transport in molecular devices: the role of coherent and incoherent electron-phonon scattering. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 19 s; p. S357-S361, ISSN: , doi: / /19/4/118 PECCHIA A., M. GHEORGHE, L. LATESSA, A. DI CARLO, P. LUGLI (2004). The influence of thermal flactuations on the electronic transport of alkeno-thiolates. IEEE TRANSACTIONS ON NANOTECHNOLOGY, vol. 3; p. 353, ISSN: X R.H. XIE, G.W. BRYANT, J. ZHAO, V.H. SMITH, A. DI CARLO, PECCHIA A. (2003). Tailorable acceptor C60(1-m)B(m) and C60(1- m)n(m) pairs for molecular electronics. PHYSICAL REVIEW LETTERS, vol. 90; p , ISSN: PECCHIA A., M.GHEORGHE, A. DI CARLO, P. LUGLI, R. SHOLZ (2003). role of thermal vibrations in molecular wire conduction. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, vol. 68; p , ISSN: PECCHIA A., M.GHEORGHE, A. DI CARLO, P. LUGLI (2003). Transport properties of carbon nanotubes with adsorbed benzyne molecules. SYNTHETIC METALS, vol. 138; p. 89, ISSN: S. PICOZZI, PECCHIA A., M.GHEORGHE, A. DI CARLO, P. LUGLI (2003). Shottky barrier height at organic-metal junction: a first principles study of PTCDA/x (x=al, Ag). PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, vol. 68; p , ISSN: B. R. WEGEWIJS, L. D. A. SIEBBELES, N. BODEN, R. J. BUSHBY, B. MOVAGHAR, O. R. LOZMAN, Q. LIU, PECCHIA A., AND L. A. MASON (2002). Charge-carrier Mobilities in binary mixtures of discotic triphenylene derivatives as a function of temperature. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, vol. 65; p. 5112, ISSN: PECCHIA A., RW KELSALL, B.MOVAGHAR, A.BOURLANGE, S.EVANS, B.HICKEY, N.BODEN (2002). Electronic Bandstructure and transport properties of self-organised organic-inorganic Heterostructures. JOURNAL OF COMPUTATIONAL ELECTRONICS, vol. 1-5, ISSN: PECCHIA A., O.R.LOZMANN, B.MOVAGHAR, N.BODEN, R.J.BUSHBY, K.J. DONOVAN, R.J.BUSHBY (2002). Photoconductive transients and one dimensional charge carrier dynamics in discotic lyquid crystals. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, vol. 65; p. 4204, ISSN: PECCHIA A., M.LAURITO, P.APAI, M.B.DANAILOV (1999). Studies of two-wave-mixing of very broad-band spectrum laser light in BaTiO3. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA. B, OPTICAL PHYSICS, vol. 16; p , ISSN: M.B.DANAILOV, M.LAURITO, PECCHIA A. (1998). FANNING NOISE REDUCTION WITH MIXED PUMP AND SIGNAL POLARIZATION. JOURNAL OF MODERN OPTICS, vol. 45; p , ISSN:
MULTISCALE THERMAL MODELS OF NANOSTRUCTURED DEVICES. Giuseppe Romano
MULTISCALE THERMAL MODELS OF NANOSTRUCTURED DEVICES Giuseppe Romano PhD dissertation XXII CICLO TUTOR: Prof. Aldo Di Carlo COORDINATOR: Prof. Giuseppe Bianchi INTRODUCTION Goodson et al. IEEE Elect. Lett.
More informationThe gdftb tool for quantum transport calculations. Alessandro Pecchia CNR - ISMN. University of Roma Tor Vergata
The gdftb tool for quantum transport calculations Alessandro Pecchia CNR - ISMN Institute for Nanostractured Materials University of Roma Tor Vergata A Gagliardi, G. Romano, G. Penazzi, M. Auf der Maur,
More informationDaniele Barettin. Classical high school Diploma at Liceo Classico Socrate, Rome, Italy. Maximum grade: 60 / 60
Daniele Barettin Via Fiume Bianco 47a 00144, Rome Italy + 39-338 - 4114108 (mobile) Daniele.Barettin@uniroma2. it danybaret@gmail.com Italian citizen Date and place of birth: Rome, 11/06/1970 Compulsory
More informationMultiscale-Multiphysics modeling of nanostructured devices: The TiberCAD project.
Multiscale-Multiphysics modeling of nanostructured devices: The TiberCAD project. M. Auf der Maur, M. Povolotskyi, F. Sacconi, G. Romano, G. Penazzi, A Gagliardi, A. Pecchia, Aldo Di Carlo, Department
More informationElectronic and Optoelectronic Properties of Semiconductor Structures
Electronic and Optoelectronic Properties of Semiconductor Structures Jasprit Singh University of Michigan, Ann Arbor CAMBRIDGE UNIVERSITY PRESS CONTENTS PREFACE INTRODUCTION xiii xiv 1.1 SURVEY OF ADVANCES
More informationSemiconductor Physical Electronics
Semiconductor Physical Electronics Sheng S. Li Semiconductor Physical Electronics Second Edition With 230 Figures Sheng S. Li Department of Electrical and Computer Engineering University of Florida Gainesville,
More informationSheng S. Li. Semiconductor Physical Electronics. Second Edition. With 230 Figures. 4) Springer
Sheng S. Li Semiconductor Physical Electronics Second Edition With 230 Figures 4) Springer Contents Preface 1. Classification of Solids and Crystal Structure 1 1.1 Introduction 1 1.2 The Bravais Lattice
More informationCURRICULUM VITAE HUAMIN LI UPDATED: DECEMBER 1, 2015 MAIN RESEARCH INTERESTS EDUCATION
CURRICULUM VITAE HUAMIN LI UPDATED: DECEMBER 1, 2015 Postdoctoral Research Associate Center for Low Energy Systems Technology (LEAST), Department of Electrical Engineering University of Notre Dame, B20
More informationSYLLABUS FINDING NANO Syllabus NanoSCI DISCOVERING NANOTECHNOLOGY AND CULTURE IN GERMANY
1. Syllabus NanoSCI Course title: NanoSCI - Electronic Properties of Nanoengineered Materials Catalog description: Physics and technology of nanoengineered materials and devices. Semiconductor nanostructures.
More informationNanoscience galore: hybrid and nanoscale photonics
Nanoscience galore: hybrid and nanoscale photonics Pavlos Lagoudakis SOLAB, 11 June 2013 Hybrid nanophotonics Nanostructures: light harvesting and light emitting devices 2 Hybrid nanophotonics Nanostructures:
More informationSemiconductor Physical Electronics
Semiconductor Physical Electronics Sheng S. Li Department of Electrical Engineering University of Florida Gainesville, Florida Plenum Press New York and London Contents CHAPTER 1. Classification of Solids
More informationName; Kazuyuki Sakamoto Birth; December 5, 1966 (Kyoto, Japan) Sex; male Family; wife and 2 children Citizenship; Japan
April 1, 2015 Curriculum Vitae Name; Kazuyuki Sakamoto Birth; December 5, 1966 (Kyoto, Japan) Sex; male Family; wife and 2 children Citizenship; Japan Job Status; Professor, Department of Nanomaterials
More informationИмпакт-факторы зарубежных научных журналов по физике
Импакт-факторы зарубежных научных журналов по физике Импактфактор Название журнала п/п 1. REVIEWS OF MODERN 30.254 2. ASTROPHYSICAL JOURNAL SUPPLEMENT SER 14.428 3. MATERIALS SCIENCE & ENGINEERING R-REPORTS
More information3-month progress Report
3-month progress Report Graphene Devices and Circuits Supervisor Dr. P.A Childs Table of Content Abstract... 1 1. Introduction... 1 1.1 Graphene gold rush... 1 1.2 Properties of graphene... 3 1.3 Semiconductor
More informationME 4875/MTE C16. Introduction to Nanomaterials and Nanotechnology. Lecture 2 - Applications of Nanomaterials + Projects
ME 4875/MTE 575 - C16 Introduction to Nanomaterials and Nanotechnology Lecture 2 - Applications of Nanomaterials + Projects 1 Project Teams of 4 students each Literature review of one application of nanotechnology
More informationChapter 3 Properties of Nanostructures
Chapter 3 Properties of Nanostructures In Chapter 2, the reduction of the extent of a solid in one or more dimensions was shown to lead to a dramatic alteration of the overall behavior of the solids. Generally,
More informationImpact Factor Journals of Physics
Impact Journals of Physics Indexed in ISI Web of Science (JCR SCI, 2016) Compiled By: Arslan Sheikh In Charge Reference & Research Section Library Information Services COMSATS Institute of Information
More informationCURRICULUM VITAE. 1. Senior Lecturer, Jan to date: Dept. of Physics, University of Nairobi (UoN)
CURRICULUM VITAE NAME: TITLE: ADDRESS: Kenneth Amiga Kaduki, Ph.D. (Kaduki, K.A.) Dr. Nairobi 00100, KENYA DATE OF BIRTH: 19th August 1963 PLACE OF BIRTH: NATIONALITY: Thika, KENYA. Kenyan MARITAL STATUS:
More informationMolybdenum Sulfide based electronics. Gotthard Seifert Physikalische Chemie,Technische Universität Dresden, Germany
start Molybdenum Sulfide based electronics Gotthard Seifert Physikalische Chemie,Technische Universität Dresden, Germany Early studies 1960-ies R. Fivaz, E. Mooser Mobility of Charge Carriers in semiconducting
More informationIII. Address Department of Physics, Iran University of Science & Technology, Tehran, P.O.Box: 16345, IRAN.
Curriculum Vitae I. Personal Last Name: Namiranian First Name: Afshin Date of Birth: 04.10.1969 (12/Mehr/1348) Place of birth: Tehran, IRAN Nationality: Iranian Marital status: Married, having two children
More informationGrégory Schehr. Citizenship : French Date of birth : March 29, First class Junior Scientist (CR1) at CNRS in Theoretical Physics.
Curriculum Vitae Grégory Schehr Citizenship : French Date of birth : March 29, 1977 Current position First class Junior Scientist (CR1) at CNRS in Theoretical Physics. Professional address Laboratoire
More informationNanoelectronics. Topics
Nanoelectronics Topics Moore s Law Inorganic nanoelectronic devices Resonant tunneling Quantum dots Single electron transistors Motivation for molecular electronics The review article Overview of Nanoelectronic
More informationProgress Report to AOARD
Progress Report to AOARD C. C. (Chih-Chung) Yang The Graduate Institute of Electro-Optical Engineering National Taiwan University No. 1, Roosevelt Road, Section 4, Taipei, Taiwan (phone) 886-2-23657624
More informationSüdliche Stadtmauerstr. 15a Tel: D Erlangen Fax:
Curriculum Vitae Lionel Santinacci 19.10.1974 Nationality: French Südliche Stadtmauerstr. 15a Tel: + 49 9131 852 7587 D-91054 Erlangen Fax: + 49 9131 852 7582 Germany e-mail: lionel@ww.uni-erlangen.de
More informationElectroluminescence from Silicon and Germanium Nanostructures
Electroluminescence from silicon Silicon Getnet M. and Ghoshal S.K 35 ORIGINAL ARTICLE Electroluminescence from Silicon and Germanium Nanostructures Getnet Melese* and Ghoshal S. K.** Abstract Silicon
More informationElectro-Thermal Transport in Silicon and Carbon Nanotube Devices E. Pop, D. Mann, J. Rowlette, K. Goodson and H. Dai
Electro-Thermal Transport in Silicon and Carbon Nanotube Devices E. Pop, D. Mann, J. Rowlette, K. Goodson and H. Dai E. Pop, 1,2 D. Mann, 1 J. Rowlette, 2 K. Goodson 2 and H. Dai 1 Dept. of 1 Chemistry
More informationNon-equilibrium Green s functions: Rough interfaces in THz quantum cascade lasers
Non-equilibrium Green s functions: Rough interfaces in THz quantum cascade lasers Tillmann Kubis, Gerhard Klimeck Department of Electrical and Computer Engineering Purdue University, West Lafayette, Indiana
More informationGeSi Quantum Dot Superlattices
GeSi Quantum Dot Superlattices ECE440 Nanoelectronics Zheng Yang Department of Electrical & Computer Engineering University of Illinois at Chicago Nanostructures & Dimensionality Bulk Quantum Walls Quantum
More informationQUANTUM WELLS, WIRES AND DOTS
QUANTUM WELLS, WIRES AND DOTS Theoretical and Computational Physics of Semiconductor Nanostructures Second Edition Paul Harrison The University of Leeds, UK /Cf}\WILEY~ ^INTERSCIENCE JOHN WILEY & SONS,
More informationDevelopment and application for X-ray excited optical luminescence (XEOL) technology at STXM beamline of SSRF
Development and application for X-ray excited optical luminescence (XEOL) technology at STXM beamline of SSRF Content Introduction to XEOL Application of XEOL Development and Application of XEOL in STXM
More informationPhysics and Material Science of Semiconductor Nanostructures
Physics and Material Science of Semiconductor Nanostructures PHYS 570P Prof. Oana Malis Email: omalis@purdue.edu Course website: http://www.physics.purdue.edu/academic_programs/courses/phys570p/ 1 Course
More informationCurriculum Vitae. Shkolnykov Vladyslav, MPhys.
Curriculum Vitae Personal Data Shkolnykov Vladyslav, MPhys. Date of birth 8 November, 1991 Residence Reutestrasse 104, 78467 Konstanz, Germany Citizenship Ukraine Marital status single Tel. +49 (162) 544-20-98
More informationHow a single defect can affect silicon nano-devices. Ted Thorbeck
How a single defect can affect silicon nano-devices Ted Thorbeck tedt@nist.gov The Big Idea As MOS-FETs continue to shrink, single atomic scale defects are beginning to affect device performance Gate Source
More informationElectronic structure and transport in silicon nanostructures with non-ideal bonding environments
Purdue University Purdue e-pubs Other Nanotechnology Publications Birck Nanotechnology Center 9-15-2008 Electronic structure and transport in silicon nanostructures with non-ideal bonding environments
More informationElectrostatics of Nanowire Transistors
Electrostatics of Nanowire Transistors Jing Guo, Jing Wang, Eric Polizzi, Supriyo Datta and Mark Lundstrom School of Electrical and Computer Engineering Purdue University, West Lafayette, IN, 47907 ABSTRACTS
More informationCurrent-Driven Phenomena in NANOELECTRONICS. Edited by Tamar Seideman Northwestern University
Current-Driven Phenomena in NANOELECTRONICS Edited by Tamar Seideman Northwestern University Published by Pan Stanford Publishing Pte. Ltd. Penthouse Level, Suntec Tower 3 8 Temasek Boulevard Singapore
More informationNanoscale Heat Transfer and Information Technology
Response to K.E. Goodson Nanoscale Heat Transfer and Information Technology Gang Chen Mechanical Engineering Department Massachusetts Institute of Technology Cambridge, MA 02139 Rohsenow Symposium on Future
More informationQuantum and Non-local Transport Models in Crosslight Device Simulators. Copyright 2008 Crosslight Software Inc.
Quantum and Non-local Transport Models in Crosslight Device Simulators Copyright 2008 Crosslight Software Inc. 1 Introduction Quantization effects Content Self-consistent charge-potential profile. Space
More informationNicholas Sedlmayr Curriculum Vitae
Nicholas Sedlmayr Curriculum Vitae Personal Details nsedlmayr@hotmail.com http://nick.sedlmayr.co.uk Institute for Mathematical and Theoretical Physics Michigan State University East Lansing, MI 48824
More informationLinn Leppert September 7, 2018
Linn Leppert September 7, 2018 Polymer Nanostructures Building Phone: +49-921-55-4461 Universität Bayreuth E-mail: linn.leppert@uni-bayreuth.de 95440 Bayreuth Web: www.leppert.physik.uni-bayreuth.de Research
More informationSYLLABUS ELEC 261: ELECTRONIC MATERIALS AND QUANTUM DEVICES SUMMER 2018
SYLLABUS ELEC 261: ELECTRONIC MATERIALS AND QUANTUM DEVICES SUMMER 2018 Credit Hours: 3 Time and Place: Online Course Summer Session II: May 29 June 29, 2018 Instructors: Junichiro Kono, Professor of Electrical
More informationASSOC. PROF. DR. ISMAIL KARAKURT Işık University Head of Department of Physics Faculty of Arts and Sciences
ASSOC. PROF. DR. ISMAIL KARAKURT Head of Department of Faculty of Arts and Sciences ikarakurt@isikun.edu.tr 1. Name : Ismail Karakurt 2. Birth Date : 1970 3. Academic Title : Associate Professor 4. Education
More informationGaN based transistors
GaN based transistors S FP FP dielectric G SiO 2 Al x Ga 1-x N barrier i-gan Buffer i-sic D Transistors "The Transistor was probably the most important invention of the 20th Century The American Institute
More informationM. Celebrano 28/11/2011. Curriculum Vitae. Michele Celebrano
Curriculum Vitae Michele Celebrano PERSONAL DATA Born March 5 th, 1979 in Piacenza, Italy. CONTACT INFORMATION Private address Farmanstrasse 49 8152, Opfikon, Switzerland mobile: +41 76 217 16 72 +39 347
More informationThe Physics of Nanoelectronics
The Physics of Nanoelectronics Transport and Fluctuation Phenomena at Low Temperatures Tero T. Heikkilä Low Temperature Laboratory, Aalto University, Finland OXFORD UNIVERSITY PRESS Contents List of symbols
More informationElectrostatics of nanowire transistors
Purdue University Purdue e-pubs Other Nanotechnology Publications Birck Nanotechnology Center 12-1-2003 Electrostatics of nanowire transistors Jing Guo Jing Wang E. Polizzi Supriyo Datta Birck Nanotechnology
More informationHeat/phonons Transport in Nanostructures and Phononics
ELTE, Budapest 14 May, 2009 Heat/phonons Transport in Nanostructures and Phononics LI Baowen ( 李保文 ) Centre for Computational Science and Engineering, FOS, & Department of Physics NUS Graduate School for
More informationFrom nanophysics research labs to cell phones. Dr. András Halbritter Department of Physics associate professor
From nanophysics research labs to cell phones Dr. András Halbritter Department of Physics associate professor Curriculum Vitae Birth: 1976. High-school graduation: 1994. Master degree: 1999. PhD: 2003.
More information2D Materials for Gas Sensing
2D Materials for Gas Sensing S. Guo, A. Rani, and M.E. Zaghloul Department of Electrical and Computer Engineering The George Washington University, Washington DC 20052 Outline Background Structures of
More informationAbout OMICS Group Conferences
About OMICS Group OMICS Group International is an amalgamation of Open Access publications and worldwide international science conferences and events. Established in the year 2007 with the sole aim of
More information2016 to date Associate Professor İzmir Institute of Technology, Department of Physics, İzmir, Turkey
Cem ÇELEBİ İzmir Institute of Technology (IZTECH) Department of Physics, 35430 Urla İzmir, TURKEY Work: +90 (0232) 750 7711 E-mail: cemcelebi@iyte.edu.tr Home page: http://qdl.iyte.edu.tr/ Employment 2016
More informationMARCO BERNARDI CONTACT INFORMATION MAIN RESEARCH INTERESTS EMPLOYMENT EDUCATION FELLOWSHIPS AND AWARDS GRADUATE STUDENT ADVISEES POSTDOCTORAL ADVISEES
MARCO BERNARDI CONTACT INFORMATION E-mail: bmarco@caltech.edu Phone: 626-395-2515 http://bernardi.caltech.edu ADDRESS California Institute of Technology 1200 E California Blvd. MC 107-81 Pasadena CA, 91125
More informationMolecular Electronics
Molecular Electronics An Introduction to Theory and Experiment Juan Carlos Cuevas Universidad Autönoma de Madrid, Spain Elke Scheer Universität Konstanz, Germany 1>World Scientific NEW JERSEY LONDON SINGAPORE
More informationDr Petridis Konstantinos (PhD, St-Andrews) Assistant Professor Short CV
Dr Petridis Konstantinos (PhD, St-Andrews) Assistant Professor Short CV Dr Konstantinos Petridis received his Bachelor in 1996 from the Department of Physics of the University of Crete, Greece. He received
More informationGraphene Canada Montreal Oct. 16, 2015 (International Year of Light)
Luminescence Properties of Graphene A. Beltaos 1,2,3, A. Bergren 1, K. Bosnick 1, N. Pekas 1, A. Matković 4, A. Meldrum 2 1 National Institute for Nanotechnology (NINT), 11421 Saskatchewan Drive, Edmonton,
More informationThe Graphene Flagship: Status and Next Steps -Greek Participation-
The Graphene Flagship: Status and Next Steps -Greek Participation- Future and Emerging Technologies Flagships are Ambitious large-scale, science-driven, research initiatives. Visionary goal. Scientific
More informationCURRICULUM VITAE Roman V. Krems
CURRICULUM VITAE Roman V. Krems POSTAL ADDRESS: Department of Chemistry, University of British Columbia 2036 Main Mall, Vancouver, B.C. Canada V6T 1Z1 Telephone: +1 (604) 827 3151 Telefax: +1 (604) 822
More informationAchieving a higher performance in bilayer graphene FET Strain Engineering
SISPAD 2015, September 9-11, 2015, Washington, DC, USA Achieving a higher performance in bilayer graphene FET Strain Engineering Fan W. Chen, Hesameddin Ilatikhameneh, Gerhard Klimeck and Rajib Rahman
More informationare microscopically large but macroscopically small contacts which may be connected to a battery to provide the bias voltage across the junction.
At present, we observe a long-lasting process of miniaturization of electronic devices. The ultimate limit for the miniaturization of electronic components is set by the atomic scale. However, in the case
More informationECE 635. Advanced Semiconductor Devices
ECE 635 Advanced Semiconductor Devices Gong Gu Course website: http://web.eecs.utk.edu/~ggu1/files/gradhome.html Fall 2017 Why Semiconductors? Sometimes we say solid state Image, sound, temperature, pressure,
More informationSimulation of organic solar cell with graphene transparent electrode
Simulation of organic solar cell with graphene transparent electrode P. Paletti 1, R. Pawar 1, G. Ulisse 2, F. Brunetti 2, G. Iannaccone 1,3, G. Fiori 1,3 1, 2 University of Rome Tor Vergata, 3 Quantavis
More informationSolid State Device Fundamentals
Solid State Device Fundamentals ENS 345 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 Office 4N101b 1 Outline - Goals of the course. What is electronic device?
More informationDEPARTMENT OF PHYSICS
Department of Physics 1 DEPARTMENT OF PHYSICS Office in Engineering Building, Room 124 (970) 491-6206 physics.colostate.edu (http://www.physics.colostate.edu) Professor Jacob Roberts, Chair Undergraduate
More information(a) (b) Supplementary Figure 1. (a) (b) (a) Supplementary Figure 2. (a) (b) (c) (d) (e)
(a) (b) Supplementary Figure 1. (a) An AFM image of the device after the formation of the contact electrodes and the top gate dielectric Al 2 O 3. (b) A line scan performed along the white dashed line
More informationNANO/MICROSCALE HEAT TRANSFER
NANO/MICROSCALE HEAT TRANSFER Zhuomin M. Zhang Georgia Institute of Technology Atlanta, Georgia New York Chicago San Francisco Lisbon London Madrid Mexico City Milan New Delhi San Juan Seoul Singapore
More informationErik Lind
High-Speed Devices, 2011 Erik Lind (Erik.Lind@ftf.lth.se) Course consists of: 30 h Lectures (H322, and Fys B check schedule) 8h Excercises 2x2h+4h Lab Excercises (2 Computer simulations, 4 RF measurment
More informationMichael W. Ray Curriculum Vitae
Michael W. Ray Curriculum Vitae Department of Physics & Astronomy Office: (916)278-6501 California State University, Sacramento Fax: (916)278-7686 Sequoia Hall 430, MS 6041 Cell: (413) 687-4569 6000 J
More informationSolid Surfaces, Interfaces and Thin Films
Hans Lüth Solid Surfaces, Interfaces and Thin Films Fifth Edition With 427 Figures.2e Springer Contents 1 Surface and Interface Physics: Its Definition and Importance... 1 Panel I: Ultrahigh Vacuum (UHV)
More informationPhysics and Material Science of Semiconductor Nanostructures
Physics and Material Science of Semiconductor Nanostructures PHYS 570P Prof. Oana Malis Email: omalis@purdue.edu Course website: http://www.physics.purdue.edu/academic_programs/courses/phys570p/ 1 Introduction
More informationElectrical and Optical Properties. H.Hofmann
Introduction to Nanomaterials Electrical and Optical Properties H.Hofmann Electrical Properties Ohm: G= σw/l where is the length of the conductor, measured in meters [m], A is the cross-section area of
More information2D Materials Research Activities at the NEST lab in Pisa, Italy. Stefan Heun NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Pisa, Italy
2D Materials Research Activities at the NEST lab in Pisa, Italy Stefan Heun NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Pisa, Italy 2D Materials Research Activities at the NEST lab in
More informationRaman spectral study of silicon nanowires: High-order scattering and phonon confinement effects
PHYSICAL REVIEW B VOLUME 61, NUMBER 24 Raman spectral study of silicon nanowires: High-order scattering and phonon confinement effects 15 JUNE 2000-II Rong-ping Wang Laboratory of Optical Physics, Institute
More informationOMEN an atomistic and full-band quantum transport simulator for post-cmos nanodevices
Purdue University Purdue e-pubs Other Nanotechnology Publications Birck Nanotechnology Center 8-18-28 OMEN an atomistic and full-band quantum transport simulator for post-cmos nanodevices Mathieu Luisier
More informationOptical memory concepts with selforganized quantum dots material systems and energy-selective charging
10th Int. Symp. "Nanostructures: Physics and Technology" St Petersburg, Russia, June 17-21, 2002 2002 IOFFE Institute QWR/QD.06 Optical memory concepts with selforganized quantum dots material systems
More informationNovel materials and nanostructures for advanced optoelectronics
Novel materials and nanostructures for advanced optoelectronics Q. Zhuang, P. Carrington, M. Hayne, A Krier Physics Department, Lancaster University, UK u Brief introduction to Outline Lancaster University
More informationFrom exhaustive simulations to key principles in DNA nanoelectronics
From exhaustive simulations to key principles in DNA nanoelectronics Dvira Segal Department of Chemistry University of Toronto Roman Korol (undergrad) Hyehwang Kim (undergrad) Michael Kilgour (grad) Challenge:
More informationOlivier Bourgeois Institut Néel
Olivier Bourgeois Institut Néel Outline Introduction: necessary concepts: phonons in low dimension, characteristic length Part 1: Transport and heat storage via phonons Specific heat and kinetic equation
More informationCHAPTER 11 Semiconductor Theory and Devices
CHAPTER 11 Semiconductor Theory and Devices 11.1 Band Theory of Solids 11.2 Semiconductor Theory 11.3 Semiconductor Devices 11.4 Nanotechnology It is evident that many years of research by a great many
More informationProject Periodic Report
Project Periodic Report Publishable Summary Grant Agreement n. 256959 Project title Nanoscale energy management for powering ICT devices Project acronym NANOPOWER Call identifier FP7-ICT-2009-5 Funding
More informationSeminars in Nanosystems - I
Seminars in Nanosystems - I Winter Semester 2011/2012 Dr. Emanuela Margapoti Emanuela.Margapoti@wsi.tum.de Dr. Gregor Koblmüller Gregor.Koblmueller@wsi.tum.de Seminar Room at ZNN 1 floor Topics of the
More informationPHYSICS-PH (PH) Courses. Physics-PH (PH) 1
Physics-PH (PH) 1 PHYSICS-PH (PH) Courses PH 110 Physics of Everyday Phenomena (GT-SC2) Credits: 3 (3-0-0) Fundamental concepts of physics and elementary quantitative reasoning applied to phenomena in
More informationReview of Semiconductor Physics
Solid-state physics Review of Semiconductor Physics The daunting task of solid state physics Quantum mechanics gives us the fundamental equation The equation is only analytically solvable for a handful
More informationSuriyanarayanan Vaikuntanathan
Suriyanarayanan Vaikuntanathan Postdoctoral Fellow svaikunt@berkeley.edu University of California, Berkeley 240-274-3192 Google Scholar citations: http://scholar.google.com/citations?user=qws4178aaaaj
More informationA -SiC MOSFET Monte Carlo Simulator Including
VLSI DESIGN 1998, Vol. 8, Nos. (1-4), pp. 257-260 Reprints available directly from the publisher Photocopying permitted by license only (C) 1998 OPA (Overseas Publishers Association) N.V. Published by
More informationLecture 20: Semiconductor Structures Kittel Ch 17, p , extra material in the class notes
Lecture 20: Semiconductor Structures Kittel Ch 17, p 494-503, 507-511 + extra material in the class notes MOS Structure Layer Structure metal Oxide insulator Semiconductor Semiconductor Large-gap Semiconductor
More informationTowards Atomistic Simulations of the Electro-Thermal Properties of Nanowire Transistors Mathieu Luisier and Reto Rhyner
Towards Atomistic Simulations of the Electro-Thermal Properties of Nanowire Transistors Mathieu Luisier and Reto Rhyner Integrated Systems Laboratory ETH Zurich, Switzerland Outline Motivation Electron
More informationGaAs and InGaAs Single Electron Hex. Title. Author(s) Kasai, Seiya; Hasegawa, Hideki. Citation 13(2-4): Issue Date DOI
Title GaAs and InGaAs Single Electron Hex Circuits Based on Binary Decision D Author(s) Kasai, Seiya; Hasegawa, Hideki Citation Physica E: Low-dimensional Systems 3(2-4): 925-929 Issue Date 2002-03 DOI
More informationMatt M. Coles. Curriculum Vitae: Matt M. Coles. Qualifications
Matt M. Coles Qualifications PhD in Theoretical Physics - Quantum Electrodynamics - Quantum Optics - Condensed Matter University of East Anglia Jan 14 Master of Mathematics (2.1 Hons) University of East
More informationSRIHARI KESHAVAMURTHY
SRIHARI 4067 Type IV Indian Institute of Technology Kanpur Uttar Pradesh 208 016 INDIA +91-512-2598721 srihari.keshava@gmail.com Department of Chemistry Indian Institute of Technology Kanpur Uttar Pradesh
More informationIndex. Index. More information. in this web service Cambridge University Press
absorption edge, 290 absorption of one photon, 285 acceptors, 118 active medium, 287 active region, 293 alkanethiol endgroups, 150 alligator clips, 147 alloy, 68 amino acids, 145 amorphous, 68 amphoteric,
More information1. Nanotechnology & nanomaterials -- Functional nanomaterials enabled by nanotechnologies.
Novel Nano-Engineered Semiconductors for Possible Photon Sources and Detectors NAI-CHANG YEH Department of Physics, California Institute of Technology 1. Nanotechnology & nanomaterials -- Functional nanomaterials
More informationDiameter Optimization for Highest Degree of Ballisticity of Carbon Nanotube Field Effect Transistors I. Khan, O. Morshed and S. M.
Diameter Optimization for Highest Degree of Ballisticity of Carbon Nanotube Field Effect Transistors I. Khan, O. Morshed and S. M. Mominuzzaman Department of Electrical and Electronic Engineering, Bangladesh
More informationConductivity and Semi-Conductors
Conductivity and Semi-Conductors J = current density = I/A E = Electric field intensity = V/l where l is the distance between two points Metals: Semiconductors: Many Polymers and Glasses 1 Electrical Conduction
More informationCall for Papers. 3 Steps to Contribute a Presentation. Submit. Submission Deadline: June 26 (Tue.), 2018 (17:00, JST)
Call for Papers 3 Steps to Contribute a Presentation Join JSAP Submit Register Regular Membership Admission Fee: 10,000 JPY Annual Due*: 10,000 JPY *Annual due will be waived for the first year. Graduate
More informationCurriculum Vitae of Sergio Ciliberto
Curriculum Vitae of Sergio Ciliberto Personal Born: 18 June 1953 Family status: Married, one son and two daughters Citizenship: Italian Email: sergio.ciliberto@ens-lyon.fr Phone: +33 4 72 72 81 43 Last
More informationMonte Carlo Based Calculation of Electron Transport Properties in Bulk InAs, AlAs and InAlAs
Bulg. J. Phys. 37 (2010) 215 222 Monte Carlo Based Calculation of Electron Transport Properties in Bulk InAs, AlAs and InAlAs H. Arabshahi 1, S. Golafrooz 2 1 Department of Physics, Ferdowsi University
More information3/10/2013. Lecture #1. How small is Nano? (A movie) What is Nanotechnology? What is Nanoelectronics? What are Emerging Devices?
EECS 498/598: Nanocircuits and Nanoarchitectures Lecture 1: Introduction to Nanotelectronic Devices (Sept. 5) Lectures 2: ITRS Nanoelectronics Road Map (Sept 7) Lecture 3: Nanodevices; Guest Lecture by
More informationOrnella Mattei. Curriculum vitae. Research interests. Education. Appointments
Ornella Mattei Curriculum vitae University of Utah Department of Mathematics 155 S 1400 E JWB 128 Salt Lake City, UT 84112 +1 8015816851 mattei@math.utah.edu https://www.math.utah.edu/ mattei Research
More informationSpectroscopies for Unoccupied States = Electrons
Spectroscopies for Unoccupied States = Electrons Photoemission 1 Hole Inverse Photoemission 1 Electron Tunneling Spectroscopy 1 Electron/Hole Emission 1 Hole Absorption Will be discussed with core levels
More informationSupplementary Figure 2 Photoluminescence in 1L- (black line) and 7L-MoS 2 (red line) of the Figure 1B with illuminated wavelength of 543 nm.
PL (normalized) Intensity (arb. u.) 1 1 8 7L-MoS 1L-MoS 6 4 37 38 39 4 41 4 Raman shift (cm -1 ) Supplementary Figure 1 Raman spectra of the Figure 1B at the 1L-MoS area (black line) and 7L-MoS area (red
More information