Octob er 10, Quiz #1
|
|
|
- Edgar Allen
- 5 years ago
- Views:
Transcription
1 Fall J/3.43J Integrated Microelectronic Devices Prof. J. A. del Alamo Octob er 10, Quiz #1 Name: General guidelines (please read carefully b efore starting): Make sure to write your name on the space designated ab ove. Open book: you can use any material you wish. All answers should b e given in the space provided. Please do not turn in any extra material. You have 120 minutes to complete your quiz. Make reasonable approximations and state them, i.e. low-level injection, extrinsic semiconductor, quasi-neutrality, etc. Partial credit will b e given for setting up problems without calculations. NO credit will b e given for answers without reasons. Use the symb ols utilized in class for the various physical parameters, i.e. N, τ, E, etc. c Pay attention to problems in which numerical answers are exp ected. An algebraic answer will not accrue full p oints. Every numerical answer must have the prop er units next to it. Points will b e subtracted for answers without units or with wrong units. In situations with a defined axis, the sign of the result is also part of the answer. If needed, use the doping-dep endent Si parameters graphed throughout del Alamo s notes. If needed, use physical parameters for silicon at ro om temp erature listed in App endix B of del Alamo s notes. If needed, use the values of fundamental constants listed in App endix A of del Alamo s notes.
2 1. (10 points) Describ e a semiconductor in which Maxwell-Boltzmann statistics cannot b e used in thermal equilibrium for neither electrons nor holes at ro om temp erature. Explain.
3 2. (10 points) Do es the threshold photon energy for carrier generation in a semiconductor dep end on doping? Explain.
4 3. (10 points) Consider a Si sample at ro om temp erature whith a dominant trap with a concentration 16 3 N t =10 cm lo cated at E i. The electron and hole capture rates for this trap are c e = c h = cm /s. This sample is placed under intense light illumination that causes the carrier concentrations to b ecome n =2 10 cm and p =10 cm, uniformly in space. Calculate the net recombination rate by as many generation/recombination pro cesses as you can.
5 [this page left intentionally blank]
6 4. (40 points) Consider a piece of n-typ e Si in thermal equilibrium at ro om temp erature. In a region defined by 0 x (µm) 10, there is a spatially varying electron concentration as sketched b elow. n o (cm -3 ) n o x 3 (x) = cm with x in cm x (µm) a) [10 points] Derive an analytical equation for the minority carrier concentration in space. Quantitatively sketch the result in a suitable diagram.
7 b) [10 points] Derive an analytical equation for the electrostatic p otential in space. Quantitatively sketch the result in a suitable diagram.
8 c) [10 points] Derive an analytical equation for the electric field in space. Quantitatively sketch the result in a suitable diagram.
9 d) [10 points] Derive an analytical expression for the charge distribution that supp orts this electric field. Quantitatively sketch the result in a suitable diagram. Can this sample b e considered quasineutral?
10 5. (30 points) The energy band diagram b elow corresp onds to a region of a Si bar at ro om temp erature next to a surface (E c E fe E c E F ) under static conditions. The actual semiconductor surface is lo cated at x =0. In answering the questions b elow, make whatever assumptions you need to make. State them and justify them clearly. a) (5 points) Circle all the terms that apply to the situation: - thermal equilibrium/out of equilibrium - uniformly dop ed/non-uniformly dop ed - n-typ e/p-typ e - low-level injection/high-level injection/extraction - intrinsic/extrinsic b) (5 points) Estimate the hole current density at x =0 (numerical answer and appropriate sign expected).
11 [this page left intentionally blank]
12 c) (5 points) Estimate the net recombination rate at x = 0 (numerical answer and appropriate sign expected). d) (5 points) Estimate the surface recombination velo city (numerical answer and appropriate sign expected).
13 e) (5 points) Estimate the electron diffusion current density at x = 0 (numerical answer and appro priate sign expected). f) (5 points) Estimate the electron drift current density at x = 0 (numerical answer and appropriate sign expected).
Decemb er 20, Final Exam
Fall 2002 6.720J/3.43J Integrated Microelectronic Devices Prof. J. A. del Alamo Decemb er 20, 2002 - Final Exam Name: General guidelines (please read carefully b efore starting): Make sure to write your
6.012 Electronic Devices and Circuits
Page 1 of 1 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.12 Electronic Devices and Circuits Exam No. 1 Wednesday, October 7, 29 7:3 to 9:3
Lecture 7 - Carrier Drift and Diffusion (cont.) February 20, Non-uniformly doped semiconductor in thermal equilibrium
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 7-1 Lecture 7 - Carrier Drift and Diffusion (cont.) February 20, 2007 Contents: 1. Non-uniformly doped semiconductor in thermal equilibrium
Lecture 8 - Carrier Drift and Diffusion (cont.) September 21, 2001
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2001 Lecture 8-1 Lecture 8 - Carrier Drift and Diffusion (cont.) September 21, 2001 Contents: 1. Non-uniformly doped semiconductor in thermal equilibrium
Lecture 10 - Carrier Flow (cont.) February 28, 2007
6.720J/3.43J Integrated Microelectronic Devices - Spring 2007 Lecture 10-1 Lecture 10 - Carrier Flow (cont.) February 28, 2007 Contents: 1. Minority-carrier type situations Reading assignment: del Alamo,
Lecture 9 - Carrier Drift and Diffusion (cont.), Carrier Flow. September 24, 2001
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2001 Lecture 9-1 Lecture 9 - Carrier Drift and Diffusion (cont.), Carrier Flow September 24, 2001 Contents: 1. Quasi-Fermi levels 2. Continuity
Lecture 8 - Carrier Drift and Diffusion (cont.), Carrier Flow. February 21, 2007
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 8-1 Lecture 8 - Carrier Drift and Diffusion (cont.), Carrier Flow February 21, 2007 Contents: 1. Quasi-Fermi levels 2. Continuity
ECE 606 Homework Week 7 Mark Lundstrom Purdue University (revised 2/25/13) e E i! E T
ECE 606 Homework Week 7 Mark Lundstrom Purdue University (revised 2/25/13) 1) Consider an n- type semiconductor for which the only states in the bandgap are donor levels (i.e. ( E T = E D ). Begin with
Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr.
Semiconductor Devices and Circuits Fall 2003 Midterm Exam Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering Name: Mat. -Nr.: Guidelines: Duration of the Midterm: 1 hour The exam is a closed
Lecture 13 - Carrier Flow (cont.), Metal-Semiconductor Junction. October 2, 2002
6.72J/3.43J - Integrated Microelectronic Devices - Fall 22 Lecture 13-1 Contents: Lecture 13 - Carrier Flow (cont.), Metal-Semiconductor Junction October 2, 22 1. Transport in space-charge and high-resistivity
n N D n p = n i p N A
Summary of electron and hole concentration in semiconductors Intrinsic semiconductor: E G n kt i = pi = N e 2 0 Donor-doped semiconductor: n N D where N D is the concentration of donor impurity Acceptor-doped
Lecture 5 - Carrier generation and recombination (cont.) September 12, 2001
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2001 Lecture 5-1 Contents: Lecture 5 - Carrier generation and recombination (cont.) September 12, 2001 1. G&R rates outside thermal equilibrium
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm I Name: Closed book. One sheet of notes is allowed.
Semiconductor Device Physics
1 Semiconductor Device Physics Lecture 3 http://zitompul.wordpress.com 2 0 1 3 Semiconductor Device Physics 2 Three primary types of carrier action occur inside a semiconductor: Drift: charged particle
Lecture 4 - Carrier generation and recombination. February 12, 2007
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 4-1 Contents: Lecture 4 - Carrier generation and recombination 1. G&R mechanisms February 12, 2007 2. Thermal equilibrium: principle
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm 2 Name: SID: Closed book. Two sheets of notes are
The 5 basic equations of semiconductor device physics: We will in general be faced with finding 5 quantities:
6.012 - Electronic Devices and Circuits Solving the 5 basic equations - 2/12/08 Version The 5 basic equations of semiconductor device physics: We will in general be faced with finding 5 quantities: n(x,t),
Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium September 20, 2005
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 4-1 Contents: Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium September 20, 2005
EE3901 A2001. Semiconductor Devices. Exam 1
Name ECE Box # Problem Score Points 1 10 2 30 3 35 4 25 EE3901 A2001 Semiconductor Devices Exam 1 This is a closed book test! You are allowed one sheet (both sides) of notes. Note: Potentially useful reference
Spring Semester 2012 Final Exam
Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters
ESE 372 / Spring 2013 / Lecture 5 Metal Oxide Semiconductor Field Effect Transistor
Metal Oxide Semiconductor Field Effect Transistor V G V G 1 Metal Oxide Semiconductor Field Effect Transistor We will need to understand how this current flows through Si What is electric current? 2 Back
Session 6: Solid State Physics. Diode
Session 6: Solid State Physics Diode 1 Outline A B C D E F G H I J 2 Definitions / Assumptions Homojunction: the junction is between two regions of the same material Heterojunction: the junction is between
Electronic Devices and Circuits Lecture 5 - p-n Junction Injection and Flow - Outline
6.012 - Electronic Devices and Circuits Lecture 5 - p-n Junction Injection and Flow - Outline Review Depletion approimation for an abrupt p-n junction Depletion charge storage and depletion capacitance
Session 5: Solid State Physics. Charge Mobility Drift Diffusion Recombination-Generation
Session 5: Solid State Physics Charge Mobility Drift Diffusion Recombination-Generation 1 Outline A B C D E F G H I J 2 Mobile Charge Carriers in Semiconductors Three primary types of carrier action occur
Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes
Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2
The German University in Cairo. Faculty of Information Engineering & Technology Semiconductors (Elct 503) Electronics Department Fall 2014
The German University in Cairo th Electronics 5 Semester Faculty of Information Engineering & Technology Semiconductors (Elct 503) Electronics Department Fall 2014 Problem Set 3 1- a) Find the resistivity
Lecture 15 - The pn Junction Diode (I) I-V Characteristics. November 1, 2005
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 15-1 Lecture 15 - The pn Junction Diode (I) I-V Characteristics November 1, 2005 Contents: 1. pn junction under bias 2. I-V characteristics
Recombination: Depletion. Auger, and Tunnelling
Recombination: Depletion Region, Bulk, Radiative, Auger, and Tunnelling Ch 140 Lecture Notes #13 Prepared by David Gleason We assume: Review of Depletion Region Recombination Flat Quantum Fermi Levels
PN Junction
P Junction 2017-05-04 Definition Power Electronics = semiconductor switches are used Analogue amplifier = high power loss 250 200 u x 150 100 u Udc i 50 0 0 50 100 150 200 250 300 350 400 i,u dc i,u u
For the following statements, mark ( ) for true statement and (X) for wrong statement and correct it.
Benha University Faculty of Engineering Shoubra Electrical Engineering Department First Year communications. Answer all the following questions Illustrate your answers with sketches when necessary. The
ECE-305: Fall 2016 Minority Carrier Diffusion Equation (MCDE)
ECE-305: Fall 2016 Minority Carrier Diffusion Equation (MCDE) Professor Peter Bermel Electrical and Computer Engineering Purdue University, West Lafayette, IN USA pbermel@purdue.edu Pierret, Semiconductor
This is the 15th lecture of this course in which we begin a new topic, Excess Carriers. This topic will be covered in two lectures.
Solid State Devices Dr. S. Karmalkar Department of Electronics and Communication Engineering Indian Institute of Technology, Madras Lecture - 15 Excess Carriers This is the 15th lecture of this course
L03: pn Junctions, Diodes
8/30/2012 Page 1 of 5 Reference:C:\Users\Bernhard Boser\Documents\Files\Lib\MathCAD\Default\defaults.mcd L03: pn Junctions, Diodes Intrinsic Si Q: What are n, p? Q: Is the Si charged? Q: How could we make
collisions of electrons. In semiconductor, in certain temperature ranges the conductivity increases rapidly by increasing temperature
1.9. Temperature Dependence of Semiconductor Conductivity Such dependence is one most important in semiconductor. In metals, Conductivity decreases by increasing temperature due to greater frequency of
Lecture 2. Semiconductor Physics. Sunday 4/10/2015 Semiconductor Physics 1-1
Lecture 2 Semiconductor Physics Sunday 4/10/2015 Semiconductor Physics 1-1 Outline Intrinsic bond model: electrons and holes Charge carrier generation and recombination Intrinsic semiconductor Doping:
Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium. February 13, 2003
6.012 - Microelectronic Devices and Circuits - Spring 2003 Lecture 4-1 Contents: Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium February 13, 2003
Solid State Physics SEMICONDUCTORS - IV. Lecture 25. A.H. Harker. Physics and Astronomy UCL
Solid State Physics SEMICONDUCTORS - IV Lecture 25 A.H. Harker Physics and Astronomy UCL 9.9 Carrier diffusion and recombination Suppose we have a p-type semiconductor, i.e. n h >> n e. (1) Create a local
Semiconductor Junctions
8 Semiconductor Junctions Almost all solar cells contain junctions between different materials of different doping. Since these junctions are crucial to the operation of the solar cell, we will discuss
Semiconductor Physics Problems 2015
Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible
ECE 305 Exam 2: Spring 2017 March 10, 2017 Muhammad Alam Purdue University
NAME: PUID: : ECE 305 Exam 2: Spring 2017 March 10, 2017 Muhammad Alam Purdue University This is a closed book exam You may use a calculator and the formula sheet Following the ECE policy, the calculator
Minority Carrier Diffusion Equation (MCDE)
ECE-305: Spring 2015 Minority Carrier Diffusion Equation (MCDE) Professor Mark undstrom Electrical and Computer Engineering Purdue University, West afayette, IN USA lundstro@purdue.edu Pierret, Semiconductor
6.012 Electronic Devices and Circuits Spring 2005
6.012 Electronic Devices and Circuits Spring 2005 May 16, 2005 Final Exam (200 points) -OPEN BOOK- Problem NAME RECITATION TIME 1 2 3 4 5 Total General guidelines (please read carefully before starting):
Quiz #1 Practice Problem Set
Name: Student Number: ELEC 3908 Physical Electronics Quiz #1 Practice Problem Set? Minutes January 22, 2016 - No aids except a non-programmable calculator - All questions must be answered - All questions
Peak Electric Field. Junction breakdown occurs when the peak electric field in the PN junction reaches a critical value. For the N + P junction,
Peak Electric Field Junction breakdown occurs when the peak electric field in the P junction reaches a critical value. For the + P junction, qa E ( x) ( xp x), s W dep 2 s ( bi Vr ) 2 s potential barrier
1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00
1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.
Lecture 19 - p-n Junction (cont.) October 18, Ideal p-n junction out of equilibrium (cont.) 2. pn junction diode: parasitics, dynamics
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 19-1 Lecture 19 - p-n Junction (cont.) October 18, 2002 Contents: 1. Ideal p-n junction out of equilibrium (cont.) 2. pn junction diode:
Lecture 35 - Bipolar Junction Transistor (cont.) November 27, Current-voltage characteristics of ideal BJT (cont.)
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 35-1 Lecture 35 - Bipolar Junction Transistor (cont.) November 27, 2002 Contents: 1. Current-voltage characteristics of ideal BJT (cont.)
Recitation 2: Equilibrium Electron and Hole Concentration from Doping
Recitation : Equilibrium Electron and Hole Concentration from Doping Here is a list of new things we learned yesterday: 1. Electrons and Holes. Generation and Recombination 3. Thermal Equilibrium 4. Law
Electronic Circuits for Mechatronics ELCT 609 Lecture 2: PN Junctions (1)
Electronic Circuits for Mechatronics ELCT 609 Lecture 2: PN Junctions (1) Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Electronic (Semiconductor) Devices P-N Junctions (Diodes): Physical
EE 3329 Electronic Devices Syllabus ( Extended Play )
EE 3329 - Electronic Devices Syllabus EE 3329 Electronic Devices Syllabus ( Extended Play ) The University of Texas at El Paso The following concepts can be part of the syllabus for the Electronic Devices
ECE 250 Electronic Devices 1. Electronic Device Modeling
ECE 250 Electronic Devices 1 ECE 250 Electronic Device Modeling ECE 250 Electronic Devices 2 Introduction to Semiconductor Physics You should really take a semiconductor device physics course. We can only
pn JUNCTION THE SHOCKLEY MODEL
The pn Junction: The Shockley Model ( S. O. Kasap, 1990-001) 1 pn JUNCTION THE SHOCKLEY MODEL Safa Kasap Department of Electrical Engineering University of Saskatchewan Canada Although the hole and its
3 Minority carrier profiles (the hyperbolic functions) Consider a
Microelectronic Devices and Circuits October 9, 013 - Homework #3 Due Nov 9, 013 1 Te pn junction Consider an abrupt Si pn + junction tat as 10 15 acceptors cm -3 on te p-side and 10 19 donors on te n-side.
Lecture 8 PN Junction and MOS Electrostatics (V) Electrostatics of Metal Oxide Semiconductor Structure (cont.) October 4, 2005
6.12 Microelectronic Devices and Circuits Fall 25 Lecture 8 1 Lecture 8 PN Junction and MOS Electrostatics (V) Electrostatics of Metal Oide Semiconductor Structure (cont.) Contents: October 4, 25 1. Overview
MTLE-6120: Advanced Electronic Properties of Materials. Intrinsic and extrinsic semiconductors. Reading: Kasap:
MTLE-6120: Advanced Electronic Properties of Materials 1 Intrinsic and extrinsic semiconductors Reading: Kasap: 5.1-5.6 Band structure and conduction 2 Metals: partially filled band(s) i.e. bands cross
ECE 335: Electronic Engineering Lecture 2: Semiconductors
Faculty of Engineering ECE 335: Electronic Engineering Lecture 2: Semiconductors Agenda Intrinsic Semiconductors Extrinsic Semiconductors N-type P-type Carrier Transport Drift Diffusion Semiconductors
PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS
PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS Tennessee Technological University Wednesday, October 30, 013 1 Introduction Chapter 4: we considered the
ECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed)
ECE-342 Test 2 Solutions, Nov 4, 2008 6:00-8:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free
3.1 Introduction to Semiconductors. Y. Baghzouz ECE Department UNLV
3.1 Introduction to Semiconductors Y. Baghzouz ECE Department UNLV Introduction In this lecture, we will cover the basic aspects of semiconductor materials, and the physical mechanisms which are at the
6.012 Electronic Devices and Circuits
Page 1 of 12 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits FINAL EXAMINATION Open book. Notes: 1. Unless
Semiconductor Physics fall 2012 problems
Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each
Engineering 2000 Chapter 8 Semiconductors. ENG2000: R.I. Hornsey Semi: 1
Engineering 2000 Chapter 8 Semiconductors ENG2000: R.I. Hornsey Semi: 1 Overview We need to know the electrical properties of Si To do this, we must also draw on some of the physical properties and we
Quiz #1 Due 9:30am Session #10. Quiz Instructions
2.626/2.627 Fall 2011 Fundamentals of Photovoltaics Quiz #1 Due 9:30am Session #10 Quiz Instructions The undergraduate version of this quiz (2.627) consists of four (4) multipart questions for a point
Carriers Concentration and Current in Semiconductors
Carriers Concentration and Current in Semiconductors Carrier Transport Two driving forces for carrier transport: electric field and spatial variation of the carrier concentration. Both driving forces lead
Lecture 22 - The Si surface and the Metal-Oxide-Semiconductor Structure (cont.) April 2, 2007
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 22-1 Lecture 22 - The Si surface and the Metal-Oxide-Semiconductor Structure (cont.) April 2, 2007 Contents: 1. Ideal MOS structure
Chapter 7. The pn Junction
Chapter 7 The pn Junction Chapter 7 PN Junction PN junction can be fabricated by implanting or diffusing donors into a P-type substrate such that a layer of semiconductor is converted into N type. Converting
ECE 305 Fall Final Exam (Exam 5) Wednesday, December 13, 2017
NAME: PUID: ECE 305 Fall 017 Final Exam (Exam 5) Wednesday, December 13, 017 This is a closed book exam. You may use a calculator and the formula sheet at the end of this exam. Following the ECE policy,
Semiconductor Physics and Devices
The pn Junction 1) Charge carriers crossing the junction. 3) Barrier potential Semiconductor Physics and Devices Chapter 8. The pn Junction Diode 2) Formation of positive and negative ions. 4) Formation
Lecture 20 - p-n Junction (cont.) October 21, Non-ideal and second-order effects
6.70J/3.43J - Integrated Microelectronic Devices - Fall 00 Lecture 0-1 Lecture 0 - p-n Junction (cont.) October 1, 00 Contents: 1. Non-ideal and second-order effects Reading assignment: del Alamo, Ch.
ECE 440 Lecture 28 : P-N Junction II Class Outline:
ECE 440 Lecture 28 : P-N Junction II Class Outline: Contact Potential Equilibrium Fermi Levels Things you should know when you leave Key Questions What is the contact potential? Where does the transition
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EECS 40 Spring 2000 Introduction to Microelectronic Devices Prof. King MIDTERM EXAMINATION
ECE 340 Lecture 21 : P-N Junction II Class Outline:
ECE 340 Lecture 21 : P-N Junction II Class Outline: Contact Potential Equilibrium Fermi Levels Things you should know when you leave Key Questions What is the contact potential? Where does the transition
Solution 11:00 AM, Wednesday February 10, 2010, 108 Nedderman Hall 80 minutes allowed (last four digits of your student #) ( if new)
MidTerm - EE 5342 (print last name) (print first name) Solution 11:00 AM, Wednesday February 10, 2010, 108 Nedderman Hall 80 minutes allowed (last four digits of your student #) (e-mail if new) Instructions:
The pn junction. [Fonstad, Ghione]
![The pn junction. [Fonstad, Ghione]](/thumbs/93/112370833.jpg "The pn junction. [Fonstad, Ghione]")
The pn junction [Fonstad, Ghione] Band diagram On the vertical axis: potential energy of the electrons On the horizontal axis: now there is nothing: later we ll put the position qf s : work function (F
V BI. H. Föll: kiel.de/matwis/amat/semi_en/kap_2/backbone/r2_2_4.html. different electrochemical potentials (i.e.
Consider the the band diagram for a homojunction, formed when two bits of the same type of semicondutor (e.g. Si) are doped p and ntype and then brought into contact. Electrons in the two bits have different
Schottky Rectifiers Zheng Yang (ERF 3017,
ECE442 Power Semiconductor Devices and Integrated Circuits Schottky Rectifiers Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Schottky Rectifier Structure 2 Metal-Semiconductor Contact The work function
Midterm I - Solutions
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Spring 2008 Professor Chenming Hu Midterm I - Solutions Name: SID: Grad/Undergrad: Closed
Today we begin the first technical topic related directly to the course that is: Equilibrium Carrier Concentration.
Solid State Devices Dr. S. Karmalkar Department of Electronics and Communication Engineering Indian Institute of Technology, Madras Lecture - 3 Equilibrium and Carrier Concentration Today we begin the
Stanford University MatSci 152: Principles of Electronic Materials and Devices Spring Quarter, Final Exam, June 8, 2010
Stanford University MatSci 152: Principles of Electronic Materials and Devices Spring Quarter, 2009-2010 Final Exam, June 8, 2010 This is a closed book, closed notes exam. You are allowed two double-sided
( )! N D ( x) ) and equilibrium
ECE 66: SOLUTIONS: ECE 66 Homework Week 8 Mark Lundstrom March 7, 13 1) The doping profile for an n- type silicon wafer ( N D = 1 15 cm - 3 ) with a heavily doped thin layer at the surface (surface concentration,
Semiconductor Optoelectronics Prof. M. R. Shenoy Department of physics Indian Institute of Technology, Delhi
Semiconductor Optoelectronics Prof. M. R. Shenoy Department of physics Indian Institute of Technology, Delhi Lecture - 18 Optical Joint Density of States So, today we will discuss the concept of optical
Lecture 17 - p-n Junction. October 11, Ideal p-n junction in equilibrium 2. Ideal p-n junction out of equilibrium
6.72J/3.43J - Integrated Microelectronic Devices - Fall 22 Lecture 17-1 Lecture 17 - p-n Junction October 11, 22 Contents: 1. Ideal p-n junction in equilibrium 2. Ideal p-n junction out of equilibrium
1st Year-Computer Communication Engineering-RUC. 4- P-N Junction
4- P-N Junction We begin our study of semiconductor devices with the junction for three reasons. (1) The device finds application in many electronic systems, e.g., in adapters that charge the batteries
Chapter 1 Semiconductor basics
Chapter 1 Semiconductor basics ELEC-H402/CH1: Semiconductor basics 1 Basic semiconductor concepts Semiconductor basics Semiconductors, silicon and hole-electron pair Intrinsic silicon properties Doped
EE 6313 Homework Assignments
EE 6313 Homework Assignments 1. Homework I: Chapter 1: 1.2, 1.5, 1.7, 1.10, 1.12 [Lattice constant only] (Due Sept. 1, 2009). 2. Homework II: Chapter 1, 2: 1.17, 2.1 (a, c) (k = π/a at zone edge), 2.3
Electrical Characteristics of MOS Devices
Electrical Characteristics of MOS Devices The MOS Capacitor Voltage components Accumulation, Depletion, Inversion Modes Effect of channel bias and substrate bias Effect of gate oide charges Threshold-voltage
Numerical Example: Carrier Concentrations
2 Numerical ample: Carrier Concentrations Donor concentration: N d = 10 15 cm -3 Thermal equilibrium electron concentration: n o N d = 10 15 cm 3 Thermal equilibrium hole concentration: 2 2 p o = n i no
Carriers Concentration, Current & Hall Effect in Semiconductors. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India
Carriers Concentration, Current & Hall Effect in Semiconductors 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India http://folk.uio.no/ravi/semi2013 Conductivity Charge
Lecture 3 Semiconductor Physics (II) Carrier Transport
Lecture 3 Semiconductor Physics (II) Carrier Transport Thermal Motion Carrier Drift Carrier Diffusion Outline Reading Assignment: Howe and Sodini; Chapter 2, Sect. 2.4-2.6 6.012 Spring 2009 Lecture 3 1
Section 12: Intro to Devices
Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals Bond Model of Electrons and Holes Si Si Si Si Si Si Si Si Si Silicon
A Simplified, Analytical, One-Dimensional Model for Saturation Operation of the Bipolar Transistor
82 A Simplified, Analytical, One-Dimensional Model for Saturation Operation of the Bipolar Transistor G.T. Wright and P.P. Frangos Electronic and Electrical Engineering Department, University of Birmingham,
Charge Carriers in Semiconductor
Charge Carriers in Semiconductor To understand PN junction s IV characteristics, it is important to understand charge carriers behavior in solids, how to modify carrier densities, and different mechanisms
Semiconductor Physics fall 2012 problems
Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each
Lecture 2. OUTLINE Basic Semiconductor Physics (cont d) PN Junction Diodes. Reading: Chapter Carrier drift and diffusion
Lecture 2 OUTLIE Basic Semiconductor Physics (cont d) Carrier drift and diffusion P unction Diodes Electrostatics Caacitance Reading: Chater 2.1 2.2 EE105 Sring 2008 Lecture 1, 2, Slide 1 Prof. Wu, UC
In this block the two transport mechanisms will be discussed: diffusion and drift.
ET3034TUx - 2.3.3 Transport of charge carriers What are the charge carrier transport principles? In this block the two transport mechanisms will be discussed: diffusion and drift. We will discuss that
MthSc 103 Test 3 Spring 2009 Version A UC , 3.1, 3.2. Student s Printed Name:
Student s Printed Name: Instructor: CUID: Section # : Read each question very carefully. You are NOT permitted to use a calculator on any portion of this test. You are not allowed to use any textbook,
Physics Exam II
Physics 208 - Exam II Spring 2018 (all sections) - March 5, 2018. Please fill out the information and read the instructions below, but do not open the exam until told to do so. Rules of the exam: 1. You
ECE 305 Exam 3: Spring 2015 March 6, 2015 Mark Lundstrom Purdue University
NAME: PUID: : ECE 305 Exam 3: March 6, 2015 Mark Lundstrom Purdue University This is a closed book exam You may use a calculator and the formula sheet at the end of this exam Following the ECE policy,
Electronics The basics of semiconductor physics
Electronics The basics of semiconductor physics Prof. Márta Rencz, Gergely Nagy BME DED September 16, 2013 The basic properties of semiconductors Semiconductors conductance is between that of conductors
2.626 Fundamentals of Photovoltaics
MIT OpenCourseWare http://ocw.mit.edu 2.626 Fundamentals of Photovoltaics Fall 2008 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms. Charge Separation: