SUNSTR 传感与控制 General Description (continued) The results of the infrared sensor measurements are stored in RM: 16-bit result

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1 SUNSTR 传感与控制 Features and Benefits Small size, low cost 16x4 pixels IR array Easy to integrate Industry standard four lead TO-39 package Factory calibrated infrared temperature measurement. Calibration parameters stored in EEPROM. Noise Equivalent Temperature Difference (NETD) 0.5 refresh rate I C compatible digital interface Programmable frame rate 0,5Hz 51Hz.6V supply voltage Current consumption less than 9m Measurement start trigger for synchronization with external control unit FOV options, 40 and 60 Ta -40 to 85 C To -50 to 300 C Complies with RoHS regulations pplications Examples High precision non-contact temperature measurements; Temperature sensing element for residential, commercial and industrial building air conditioning; Microwave ovens Home appliances with temperature control; Thermal Comfort sensor in automotive ir Conditioning control system; Passenger classification utomotive blind angle detection; Industrial temperature control of moving parts; Identifying thermal leaks in homes Thermal scanners Security / safety gates Intrusion / Movement detection; Presence detection/ Person localization Ordering Information Part No. Temperature Code E (-40 C to 85 C) Package Code SF (TO-39) Option Code - X X X (1) () (3) Standard part -000 Packing form -TU Example: ESF-BB-000-TU (1) Supply Voltage B = 3V () Number of thermopiles: = 16X4 (3) Package options: = reserved B = 60 FOV C = reserved D = 40 FOV Functional diagram Digital ctive Thermopile rray Digital filtering RM memory EEPROM IC interface CL SD VDD VSS General Description The is a fully calibrated 16x4 pixels IR array in an industry standard 4-lead TO-39 package. It contains chips in one package: the Mlx90670 (IR array with signal conditioning electronics) and the 40 (56x8 EEPROM) chip. The MlX9060 contains 64 IR pixels with dedicated low noise chopper stabilized amplifier and fast DC integrated. PTT (Proportional To bsolute Temperature) sensor is integrated to measure the ambient temperature of the chip. The outputs of both IR and PTT sensors are stored in internal RM and are accessible through I C Page 1 of 40 Datasheet IR16x4 SUNSTR 自动化

2 SUNSTR 传感与控制 General Description (continued) The results of the infrared sensor measurements are stored in RM: 16-bit result of IR measurement for each individual sensor (64 words) 16-bit result of PTT sensor Depending on the application, the external microcontroller can read the different RM data and, based on the calibration data stored in the EEPROM memory, compensate for difference between sensors to build up a thermal image, or calculate the temperature at each spot of the imaged scene. These constants are accessible by the user microcontroller through the IC bus and have to be used for external post processing of the thermal data. This post processing includes: Ta calculation Pixel offset cancelling Pixel to pixel sensitivity difference compensation Object emissivity compensation Object temperature calculation The result is an image with NETD better than 0.08 rms at 1Hz refresh rate. The refresh rate of the array is programmable by means of register settings or directly via IC command. Changes of the refresh rate have a direct impact on the integration time and noise bandwidth (faster refresh rate means higher noise level). The frame rate is programmable in the range 0,5Hz 51Hz and can be changed to achieve the desired trade off between speed and accuracy. The requires a single 3V supply (±0,6V) although the device is calibrated and performs best at VDD=.6V. The is factory calibrated in wide temperature ranges: C for the ambient temperature sensor C for the object temperature. Each pixel of the array measures the average temperature of all objects in its own Field Of View (called nfov). It is very important for the application designer to understand that the accuracy of the temperature measurement is very sensitive to the thermal equilibrium isothermal conditions (there are no temperature differences across the sensor package). The accuracy of the thermometer can be influenced by temperature differences in the package induced by causes like (among others): Hot electronics behind the sensor, heaters/coolers behind or beside the sensor or by a hot/cold object very close to the sensor that not only heats the sensing element in the thermometer but also the thermometer package. This effect is especially relevant for thermometers with a small FOV as the energy received by the sensor from the object is reduced Page of 40 Datasheet IR16x4 SUNSTR 自动化

3 SUNSTR 传感与控制 1 Table of contents 1 Table of contents...3 Glossary of terms bsolute Maximum ratings Pin definition and description Electrical characteristics Block diagram Principle of operation Initialization Reading configuration Read measurement data PTT data read IR data read Calculation Calculation of absolute chip temperature Ta (sensor temperature) Example for Ta calculations Calculation of To Example for To calculations Detailed description, Block description Pixel position address map RM Internal registers Configuration register (0x9) Trimming register (0x93) EEPROM POR ESD Communication protocol Communication pins Low level communication protocol Start / Stop condition Device addressing cknowledge Low level communication operation Device modes Normal mode Communication to IR array Read command Write configuration register command Write trimming command Communication to EEPROM Performance Graphs Temperature accuracy of the Field Of View (FOV) pplications Information Use of the thermometer in SMBus configuration pplication Comments Standard information regarding manufacturability of Melexis products with different soldering processes ESD Precautions FQ Mechanical specification Package outline Page 3 of 40 Datasheet IR16x4 SUNSTR 自动化

4 SUNSTR 传感与控制 Part marking References Disclaimer Page 4 of 40 Datasheet IR16x4 SUNSTR 自动化

5 SUNSTR 传感与控制 Glossary of terms POR PTT IR IR_data DC Ta To TGC FOV ESD EMC I C SD SCL DSP HFO FpS MD SD TBD N Power On Reset Proportional To bsolute Temperature sensor (package temperature) Infra Red Infrared data (raw data from DC proportional to IR energy received by the sensor) nalog To Digital Converter mbient Temperature measured from the chip (the package temperature) Object Temperature, seen from IR sensor Temperature Gradient Coefficient Field Of View Electro-Static Discharge Electro-Magnetic Compatibility Inter-Integrated Circuit communication protocol Serial Data Serial Clock Digital Signal Processing High Frequency Oscillator (RC type) Frames per Second data refresh rate Master Device Slave Device To Be Defined Not pplicable Table 1 Glossary of terms 3 bsolute Maximum ratings Parameter Supply Voltage, V DD (over voltage) 5V Supply Voltage, V DD (operating max) 3.6V Reverse Voltage (each pin) -0.3 V Operating Temperature Range, T C Storage Temperature Range, T S C ESD Sensitivity (EC Q100 00) kv DC sink current, SD 5 m DC source current, SD N DC clamp current, SD N DC source current, SCL N (input only) DC clamp current, SCL N Table bsolute maximum ratings for Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximumrated conditions for extended periods may affect device reliability Page 5 of 40 Datasheet IR16x4 SUNSTR 自动化

6 SUNSTR 传感与控制 4 Pin definition and description 4 - VSS 1 - SCL 3 - VDD - SD Bottom view Figure 1 Pin description Pin Name SCL SD VDD VSS Function Serial clock input for wire communications protocol Digital input / output wire communications protocol. External supply voltage Ground (case) Table 3 Pin description for Page 6 of 40 Datasheet IR16x4 SUNSTR 自动化

7 SUNSTR 传感与控制 5 Electrical characteristics ll parameters are valid for T = 5 C, V DD =.6V (unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Units Supplies External supply 1 V DD V Supply current I DD No load 5 7 m Power On Reset POR level V POR_up Power-up (full temp range)..4 V POR level V POR_down Power down (full temp range) V POR hysteresis V POR_hys Full temp range 0.1 V V DD rise time (10% to 90% of specified supply voltage) T POR Ensure POR signal 100 s I C compatible -wire interface Sensor chip Slave address S Factory default 60 hex Input high voltage V IH (Ta, V) Over temperature and supply 0.7VDD V Input low voltage V IL (Ta, V) Over temperature and supply 0.3VDD V Output low voltage Output low voltage V OL V OL SD over temperature and supply, Isink = 6m (FM mode) SD over temperature and supply, Isink = 0m (FM+ mode) 0.6 V 0.4 V SCL leakage I SCL, leak V SCL=4V, Ta=+85 C SD leakage I SD, leak V SD=4V, Ta=+85 C SCL capacitance C SCL Two dies MLX EEPROM 0 pf I C clock frequency SCL IR 1 MHz cknowledge setup time Tsuac(MD) 8-th SCL falling edge, Master 0.45 s cknowledge hold time Thdac(MD) 9-th SCL falling edge, Master 0.45 s cknowledge setup time Tsuac(SD) 8-th SCL falling edge, Slave 0.45 s cknowledge hold time Thdac(SD) 9-th SCL falling edge, Slave 0.45 s EEPROM Slave address S Factory default 50 hex I C clock frequency SCL EEPROM EEPROM 400 khz Data retention Ta = +85 C 00 years Erase/write cycles Ta = +5 C 1M Times Erase/write cycles Ta = +15 C 100 Times Erase cell time T_erase 5 ms Write cell time T_write 5 ms Table 4 Electrical specification parameters of 1) The device can be supplied with VDD =.6 3.3V but the best performance is at VDD=.6V Page 7 of 40 Datasheet IR16x4 SUNSTR 自动化

8 SUNSTR 传感与控制 6 Block diagram Digital ctive Thermopile rray Digital filtering EEPROM RM memory IC interface Voltage regulator CL SD VSS VDD Figure Block diagram The device consists of chips packed in single TO-39 package IR array and processing electronics EEPROM chip Page 8 of 40 Datasheet IR16x4 SUNSTR 自动化

9 SUNSTR 传感与控制 7 Principle of operation The output of all IR sensors and absolute temperature sensors is scanned according to the programmed refresh rate. Using their output data as well as calibration constants written in EEPROM the absolute chip temperature and object temperature, seen by each pixel can be calculated. For this goal several sequential calculations must be done according to the Figure 3 Operation block diagram POR (see 8.3) Wait 5ms Read the EEPROM table (see 8..3, 9.5) Store the calibration coefficients in the MCU RM for fast access Write the oscillator trim value into the IO at address 0x93 (see 7.1, 8..., 9.4.4) Write the configuration value (IO address 0x9) (see 8...1, 9.4.3) The value is either read from the EEPROM or hard coded externally Set the POR/ Brown Out flag to 1 (bit 10 at address 0x9) Yes POR/Brown Out flag cleared? (see 8...1) No Read measurement data (PTT + desired IR data) (see 7..1, 7.., 8..1, 9.4.) Calcullations (see 7.3) Tambient calculation Pixel offset cancelling Pixel to pixel normalization Object emissivity compensation Object temperature calculation Image processing and correction Figure 3 Operation block diagram Page 9 of 40 Datasheet IR16x4 SUNSTR 自动化

10 SUNSTR 传感与控制 Initialization fter the POR is released the external MCU must execute an initialization procedure. This procedure must start at least 5ms after POR release. - Read the whole EEPROM (see Figure 4). For maximum speed performance MELEXIS recommends that the whole calibration data is stored into the client MCU RM. However it is possible to read the calibration data from the EEPROM only when needed. This will result in increased time for temperature calculation i.e. low refresh rate. Slave address Command Slave address SD Initial address - 0x00 DT(0x00) S W S R DT(0x01) DT(0xFF) NC P SCL Figure 4 Whole EEPROM dump (S = 0x50, command = 0x00) - Store the EEPROM content into customer MCU RM This step could be omitted resulting in more data processing time because calibration data needs to be reread for each calculation - Write the oscillator trimming value (extracted from EEPROM content at address 0xF7) into the corresponding register (0x93). Slave address Command SD LSByte check (LSByte - 0x) LSByte data S W MSByte check (MSByte - 0x) MSByte data P SCL sent: Figure 5 Write oscillator trimming (S = 0x60, command = 0x04) Example: If the value that has to be uploaded is 0x005 the following sequence must be 1. Start condition (Falling edge of SD while SCL is high). Slave address (S=0x60) plus write bit = 0xC0 3. Command = 0x04 4. LSByte check = LSByte 0x = 0x5 0x = 0x8 5. LSbyte = 0x5 6. MSByte check = MSByte 0x = 0x00 0x = 0x56 7. MSbyte = 0x00 8. Stop condition (Rising edge of SD while SCL is high) - Write device configuration value. In EEPROM addresses (0xF5 and 0xF6) MELEXIS provides a typical value of the configuration register (0x740E). So it is up to the user to copy that value or hardcode a new value to be loaded into the configuration register. If the EEPROM value is to be used the 16 bits are combined as follows: For example: if EEPROM 0xF5 = 0x0E and 0xF6 = 0x74, the Configuration register value is: Configuration _ register _ value {0 xf6 : 0xF5} 0x740E Slave address Command SD LSByte check (LSByte - 0x55) LSByte data S W MSByte check (MSByte - 0x55) MSByte data (15:11) 1 (9:8) P SCL Figure 6 Write configuration register (S = 0x60, command = 0x03) Page 10 of 40 Datasheet IR16x4 SUNSTR 自动化

11 SUNSTR 传感与控制 NOTE: The user must ensure that the bit 10 (POR or Brown-out flag) in Configuration register is set to 1 by the MD. Further more this bit must be checked regularly and if it is cleared that would mean that the device has been reset and the initialisation procedure must be redone. sent: Example: If the value that has to be uploaded is 0x740E the following sequence must be 1. Start condition (Falling edge of SD while SCL is high). Slave address (S=0x60) plus write bit = 0xC0 3. Command = 0x03 4. LSByte check = LSByte 0x55 = 0x0E 0x55 = 0xB9 5. LSbyte = 0x0E 6. MSByte check = MSByte 0x55 = 0x74 0x55 = 0x1F 7. MSbyte = 0x74 8. Stop condition (Rising edge of SD while SCL is high) The default configuration is: - IR refresh rate = 1Hz; - Ta refresh rate = Hz; - Normal mode (no sleep); - I C FM+ mode enabled (maximum bit transfer up to 1000 bit/s); - DC low reference enabled; Reading configuration Reading configuration register Slave address Command Start address ddress step Number of reads Slave address SD Configuration value Configuration value LSByte MSByte S W S R P SCL Figure 7 Reading configuration register (S = 0x60, command = 0x0, Start address = 0x9, ddress step = 0x00, Number of reads = 0x01) Reading oscillator trimming register Slave address Command Start address ddress step Number of reads Slave address SD Oscillator trim value Oscillator trim value LSByte MSByte S W S R P SCL Figure 8 Reading configuration register (S = 0x60, command = 0x0, Start address = 0x93, ddress step = 0x00, Number of reads = 0x01) Page 11 of 40 Datasheet IR16x4 SUNSTR 自动化

12 SUNSTR 传感与控制 7. Read measurement data 7..1 PTT data read bsolute ambient temperature data of the device it self (package temperature) can be read by using following command: Slave address Command Start address ddress step Number of reads Slave address SD PTT data PTT data LSByte MSByte S W S R P SCL Figure 9 PTT (S = 0x60, command = 0x0, Start address = 0x90, ddress step = 0x00, Number of reads = 0x01) measurement result read PTT _ data { PTT _ data _ MSbyte: PTT _ data _ LSbyte} 7.. IR data read There are four options available for reading IR data: (See section 8..1 for an overview of the RM addresses). - Whole frame read (MELEXIS recommends the whole frame read for maximum refresh rate) Slave address Command Start address ddress step Number of reads Slave address SD S W S R SCL IR pixel(0, 0) LSByte IR pixel(0, 0) MSByte IR pixel(1, 0) LSByte IR pixel(1, 0) MSByte IR pixel(3, 15) LSByte IR pixel(3, 15) MSByte P Figure 10 Whole frame (S = 0x60, command = 0x0, Start address = 0x00, ddress step = 0x01, Number of reads = 0x40) measurement result read - Single column read Slave address Command ddress step Number of reads Slave address SD S W Start address S R SCL IR pixel(0, column) LSByte IR pixel(0, column) MSByte IR pixel(1, column) LSByte IR pixel(1, column) MSByte IR pixel(3, column) LSByte IR pixel(3, column) MSByte P Figure 11 Single column (S = 0x60, command = 0x0, Start address = 0x00 0x3C (step 0x04), ddress step = 0x01, Number of reads = 0x04) measurement result read Page 1 of 40 Datasheet IR16x4 SUNSTR 自动化

13 SUNSTR 传感与控制 - Single line read Slave address Command ddress step Number of reads Slave address SD S W Start address S R SCL IR pixel(line, 0) LSByte IR pixel(line, 0) MSByte IR pixel(line, 1) LSByte IR pixel(line, 1) MSByte IR pixel(line, 15) LSByte IR pixel(line, 15) MSByte P Figure 1 Single line (S = 0x60, command = 0x0, Start address = 0x00 0x03 (step 0x01), ddress step = 0x04, Number of reads = 0x10) measurement result read - Single pixel read Slave address Command ddress step Number of reads Slave address SD IR pixel data IR pixel data Start address LSByte MSByte 1 0 W S R S 0 P SCL Figure 13 Single pixel (S = 0x60, command = 0x0, Start address = 0x00 0x3F, ddress step = 0x00, Number of reads = 0x01) measurement result read - Compensation pixel read Slave address Command Start address ddress step Number of reads Slave address SD PTT data PTT data LSByte MSByte S W S R P SCL Figure 14 Compensation pixel (S = 0x60, command = 0x0, Start address = 0x91, ddress step = 0x00, Number of reads = 0x01) measurement result read The 16bit data for each pixel is: IR( i, _ data { IR( i, _ data _ MSbyte: IR( i, _ data _ LSbyte} Page 13 of 40 Datasheet IR16x4 SUNSTR 自动化

14 SUNSTR 传感与控制 Calculation Calculation of absolute chip temperature Ta (sensor temperature) The output signal of the IR sensors is relative to the cold junction temperature. That is why we need to know the temperature of the die in order to be able to calculate the object temperature seen by each pixel. The Ta can be calculated using the formula: Ta T1 T1 4 T V TH T 5 PTT _ data 5,[ C] Constants V TH (5), Error! Objects cannot be created from editing field codes.and T are stored in EEPROM at following addresses as two s complement values: EEPROM address Cell name Stored as Parameter 0xD V TH _L 0xDB V TH _H s complement V TH0 of absolute temperature sensor 0xDC T1 _L 0xDD T1 _H s complement T1 of absolute temperature sensor 0xDE T _L 0xDF T _H s complement T of absolute temperature sensor Table 5 EEPROM parameters for Ta calculations V TH T V V TH _ H 56. T1_ H T1_ L 10 TH _ L T 56. T _ H T _ L Example for Ta calculations Let s assume that the values in EEPROM are as follows: EEPROM address Cell name Cell values (hex) 0xD V TH _L 0x78 0xDB V TH _H 0x1 0xDC T1 _L 0x33 0xDD T1 _H 0x5B 0xDE T _L 0xCC 0xDF T _H 0xED Table 6 EXMPLE for Ta calibration values Page 14 of 40 Datasheet IR16x4 SUNSTR 自动化

15 SUNSTR 传感与控制 V TH 56. V V TH _ H TH _ Sign check L 6776 V TH T1_ H T1_ L T , decimal value 3347 Sign check T T _ H T _ L T Sign check T Let s assume that the input data is: PTT _ data 0x1C0 = 6848 dec Thus the ambient temperature is: Ta T1 T1 4 T V TH T (5) PTT _ data Ta ( ) Ta Ta Ta 8. 16C Page 15 of 40 Datasheet IR16x4 SUNSTR 自动化

16 SUNSTR 传感与控制 Calculation of To Following formula is used to calculate the temperature seen by specific pixel in the matrix: VIR( i, _ COMPENSTED 4 T 4 T ,[ Where: ] O( i, a C ( i, V IR( i, j ) _ COMPENSTED is the parasitic free IR compensated signal as calculated in is a individual pixel sensitivity coefficient stored in EEPROM as calculated in ( i, T a is the ambient temperature calculated in Calculating V IR(I,_COMPENSTED 1. Offset compensation Bi( i, V IR( i, _ OFF _ COMP VIR( i, i ( i, T B a Ta _ 0 i _ scale Where: V is a individual pixel IR_data readout (RM read) value IR( i, is a individual pixel offset stored in EEPROM as two s complement value i( i, B is a individual pixel offset slope coefficient stored in EEPROM as two s complements i( i, B _ is a scaling coefficient for slope of IR pixels offset and is stored in the EEPROM as i SCLE unsigned value T is ambient temperature calculated in 7.3. a T a _ 0 5C is a constant NOTE: This applies to the compensation pixel as well ( CP and B CP while B i _ SCLE is the same). Thermal Gradient Compensation (TGC) TGC V IR( i, _ TGC _ COMP VIR( i, _ OFF _ COMP. V 3 Where: V IR IR _ CP _ OFF _ COMP _ CP _ OFF _ COMP is offset compensated IR signal of the thermal gradient compensation pixel TGC is a coefficient stored at EEPROM address 0xD8 as two s complement value 3. Emissivity compensation VIR( i, V IR( i, _ COMPENSTED _ TGC _ COMP Where: is emissivity coefficient. The scaled value is stored into EEPROM as unsigned value 56. _ H _ L Page 16 of 40 Datasheet IR16x4 SUNSTR 自动化

17 Calculating (I, Where: SUNSTR 传感与控制 _ L ( i, 0 _ H ( i, 0 _ SCLERE 0 _ H, SCLERE 0 _ L, ( i,, 0 _ SCLE and SCLE are stored in the EEPROM as unsigned values ll parameters necessary to calculate To are stored into EEPROM at following addresses: EEPROM address Cell name Stored as Parameter 0x00 0x3F i( i, s complement IR pixel individual offset coefficient 0x40 0x7F B i( i, s complement Individual Ta dependence (slope) of IR pixels offset i 0x80 0xBF (, unsigned Individual sensitivity coefficient 0xD4 s complement Compensation pixel individual offset coefficients 0xD5 0xD6 0xD7 CP B CP s complement CP _ L CP _ H unsigned Individual Ta dependence (slope) of the compensation pixel offset Sensitivity coefficient of the compensation pixel 0xD8 TGC s complement Thermal gradient coefficient 0xD9 B _ unsigned Scaling coefficient for slope of IR pixels offset 0xE0 0xE1 0xE 0xE3 0xE4 0xE5 i SCLE 0 _ L 0 _ H unsigned Common sensitivity coefficient of IR pixels 0 _ SCLE unsigned Scaling coefficient for common sensitivity SCLE unsigned Scaling coefficient for individual sensitivity _ L _ H unsigned Emissivity Table 7 EEPROM parameters for To calculations Page 17 of 40 Datasheet IR16x4 SUNSTR 自动化

18 SUNSTR 传感与控制 Example for To calculations Let s assume that we have following EEPROM data for pixel i=, j=8: EEPROM address Cell name Stored as Cell values (hex) 0x i(,8) s complement 0xD6 0x6 B i(,8) s complement 0xC1 0x (,8 ) unsigned 0x8F 0xD4 0xD5 0xD6 0xD7 CP s complement 0xD0 B s complement 0xC CP unsigned 0x00 CP _ L CP _ H unsigned 0x00 0xD8 TGC s complement 0x3 0xD9 0xE0 0xE1 0xE 0xE3 0xE4 0xE5 B _ unsigned 0x08 i SCLE 0 _ L unsigned 0xE4 0 _ H unsigned 0xD5 0 _ SCLE unsigned 0x SCLE unsigned 0x1 _ L unsigned 0x99 _ H unsigned 0x79 Table 8 Let s assume that we have the following input data: 0xFFD , decimal value (compensation pixel readings) V CP V IR Sign check V (,8) 0x , decimal value Sign check V 144 Ta 8. 16C (as calculated in 7.3.) Reference routine for To computation: CP IR(,8) CP 0xD0 08, decimal value Sign check B CP 0xC 0, decimal value Sign check 0 17 B CP CP Page 18 of 40 Datasheet IR16x4 SUNSTR 自动化

19 SUNSTR 传感与控制 V CP _ OFF _ COMP V CP CP B Bi CP _ scale 54 T T a a _ 0 8 i B i (,8) 0xD6 14, decimal value Sign check i(,8) (,8) 0xC1 193, decimal value Sign check B i(,8) V IR(,8) _ OFF _ COMP V IR(,8) i(,8) Bi bi (,8) _ scale 63 T T a a _ 0 8 TGC 0x3 35, decimal value Sign check TGC 35 V TGC. V IR( i, _ TGC _ COMP VIR( i, _ OFF _ COMP IR _ CP _ OFF _ COMP 56. _ H _ L V V IR( i, _ TGC _ COMP IR( i, _ COMPENSTED _ H 0 _ L (,8) 0_ SCLERE TGC CP _ H CP _ L (,8) SCLERE (,8) T O(,8) 4 V IR(,8) _ COMPENSTED (,8) 4 T a T O (,8) C Page 19 of 40 Datasheet IR16x4 SUNSTR 自动化

20 SUNSTR 传感与控制 8 Detailed description, Block description 8.1 Pixel position The array consists of 64 IR sensors (also called pixels). Each pixel is identified with its row and column position as Pix(i, where i is its row number (from 0 to 3) and j is its column number (from 0 to 15) Reference pin Row 0 Row 1 Row Row 3 Col 0 Col 1 Col Col 3 Col 4 Col 5 Col 6 Col 7 Col 8 Col 9 Col 10 Col 11 Col 1 Col 13 Col 14 Col 15 Figure 15 Pixel position in the whole FOV Page 0 of 40 Datasheet IR16x4 SUNSTR 自动化

21 SUNSTR 传感与控制 8. address map The address map is shown below: 0x00 RM 0x91 0x9 0x93 0x93 Configuration registers Not used 0xFF Figure 16 ddress map 8..1 RM The on chip 146x16 RM is accessible for reading via I C. The RM is used for storing the results of measurements of pixels and Ta sensor and is distributes as follows: 64 words for IR sensors. The data is in s complement format (see 7..) 1 word for measurement result of PTT sensor. The data is 16 bit without sign. (see 7..1) The memory map of the RM is shown below: RM ddress 0x00 0x01 0x0 0x03 0x04 0x05 0x3B 0x3C 0x3D 0x3E 0x3F 0X40 0X8F 0x90 0x91 RM variable description IR sensor (0,0) result IR sensor (1,0) result IR sensor (,0) result IR sensor (3,0) result IR sensor (0,1) result IR sensor (1,1) result IR sensor (3,14) result IR sensor (0,15) result IR sensor (1,15) result IR sensor (,15) result IR sensor (3,15) result N N PTT sensor result TGC sensor result Table 9: Result address map For IR sensors results, the addressing can be summarized: IR(x,y) is on address: IR ( x, y) address x 4. y Page 1 of 40 Datasheet IR16x4 SUNSTR 自动化

22 SUNSTR 传感与控制 Internal registers Configuration register (0x9) The configuration register defines the chip operating modes. It can be read and written by the I C MD Configuration register bit meaning (0x9) x IR Refresh rate = 51Hz IR Refresh rate = 51Hz IR Refresh rate = 51Hz IR Refresh rate = 51Hz IR Refresh rate = 51Hz IR Refresh rate = 51Hz IR Refresh rate = 56Hz IR Refresh rate = 18Hz IR Refresh rate = 64Hz IR Refresh rate = 3Hz IR Refresh rate = 16Hz IR Refresh rate = 8Hz IR Refresh rate = 4Hz IR Refresh rate = Hz IR Refresh rate = 1Hz (default) IR Refresh rate = 0.5Hz x x N 0 - Continuous measurement mode (default) 1 - Melexis reserved 0 - Normal operation mode (default) 1 - Sleep mode 0 - No Ta measurement running (flag only can not be written) 1 - Ta measurement running (flag only can not be written) 0 - No IR measurement running (flag only can not be written) 1 - IR measurement running (flag only can not be written) 0 - POR or Brown-out occurred - Need to reload Configuration register 1 - MD must write "1" during uploading Confuguration register (default) 0 - I C FM+ mode eneabled (max bit transfer rates up to 1000 kbit/s) (default) 1 - I C FM+ mode disabled (max bit transfer rates up to 400 kbit/s) Ta Refresh rate = 16Hz Ta Refresh rate = 8Hz Ta Refresh rate = 4Hz Ta Refresh rate = Hz (default) 0 - DC high reference enabled 1 - DC low reference enabled (default) N Table 10: Configuration register bit meaning 8... Trimming register (0x93) It can be read and written by the I C MD Trimming register bit meaning (0x93) x x x x x x x x x N 7 bit value - Oscillator trim value Table 11: Oscillator trimming bit meaning Page of 40 Datasheet IR16x4 SUNSTR 自动化

23 SUNSTR 传感与控制 EEPROM kbit, organized as 56x8 EEPROM is built in the Mlx9060. The EEPROM has a separate IC address S = 0x50 and is used to store the calibration constants and the configuration of the device. ddress i (0,0) i (1,0) i (,0) i (3,0) i (0,1) i (1,1) i (,1) i (3,1) i - IR pixels individual offset coefficients i (0,14) i (1,14) i (,14) i (3,14) i (0,15) i (1,15) i (,15) i (3,15) 40 Bi (0,0) Bi (1,0) Bi (,0) Bi (3,0) Bi (0,1) Bi (1,1) Bi (,1) Bi (3,1) Bi - Individual Ta dependence (slope) of IR pixels offset Bi (0,14) Bi (1,14) Bi (,14) Bi (3,14) Bi (0,15) Bi (1,15) Bi (,15) Bi (3,15) 80 (0,0) (1,0) (,0) (3,0) (0,1) (1,1) (,1) (3,1) Individual sensitivity coefficients 8 B0 B8 (0,14) (1,14) (,14) (3,14) (0,15) (1,15) (,15) (3,15) C0 C8 MELEXIS reserved D0 D8 TGC MELEXIS reserved Scale offset Compensation pixel coefficients PTT E0 Common sensitivity coefficients Emissivity sta E8 MELEXIS reserved F0 MELEXIS reserved Config register OSC trim F8 Chip ID Table 1: EEPROM map Detailed descriptions of some of the EEPROM addresses are described here after: D7 D6 D5 D4 D3 D D1 D0 EEPROM cell meaning MELEXIS reserved - MELEXIS reserved CP - Compensation pixel individial offset B CP - Individual Ta dependence (slope) of the compensation pixel offset CP _H CP _L - Sensitivity coefficient of the compensation pixel Table 13: D0 D7 EEPROM cell meaning DF DE DD DC DB D D9 D8 EEPROM cell meaning TGC - Thermal Gradien Coefficient Bi scale - Scaling coeficient of slope of IR pixels offset V th _H V th _L - Vth0 of absolute temperatire sensor T1 _H T1 _L - T1 of absolute temperatire sensor T _H T _L - t of absolute temperatire sensor Table 14: DF D8 EEPROM cell meaning Page 3 of 40 Datasheet IR16x4 SUNSTR 自动化

24 SUNSTR 传感与控制 E7 E6 E5 E4 E3 E E1 E0 EEPROM cell meaning MELEXIS reserved 0_scale 0 _H 0 _L - Common sensitivity coefficient - Common sensitivity scaling coefficient scale - Individual sensitivity scaling coefficient _H _L - Emissivity coefficient - MELEXIS reserved Table 15: E7 E0 EEPROM cell meaning F7 F6 F5 F4 F3 F F1 F0 EEPROM cell meaning MELEXIS reserved CFG_H CFG_L - Config register value OSC_trim - Oscillator trimming value 8.3 POR Table 16: F7 F0 EEPROM cell meaning - MELEXIS reserved The Power On Reset (POR) is connected to the Vdd supply. The on-chip POR circuit provides an active level of the POR signal when the Vdd voltage rises above approximately 0.5V and holds the entire Mlx9060 in reset until the Vdd is higher than.4v. The device will start approximately 5 ms after the POR release. 8.4 ESD ESD, V Human Body Model Page 4 of 40 Datasheet IR16x4 SUNSTR 自动化

25 SUNSTR 传感与控制 9 Communication protocol The device supports Fast Mode Plus I C FM+ (IR array only up to 1Mbps) and will work in slave mode only. The master device is providing the clock signal (SCL) for the communication. The data line SD is bidirectional and is driven by the master or the slave depending on the command. The selection of the SD occupant is done according to the I C specification. s the SD is an open-drain IO, 0 is transmitted by forcing the line LOW and a 1 just by releasing it. During data transfer, the data line could be changed only while SCL is low. Other wise, it would be interpreted as a start/stop condition 9.1 Communication pins There are two communication pins SCL and SD. SCL is an input only for the while the SD pin is a bidirectional one. The SD line should be wired in an open-drain configuration scl_in sda_out +VDD external Digital Block Rp Rp sda_in SCL SD External IC Master SCL (Serial Clock Line ) SD (Serial data Line ) SCL SD 40 Figure 17 Communication pin diagram Page 5 of 40 Datasheet IR16x4 SUNSTR 自动化

26 SUNSTR 传感与控制 9. Low level communication protocol 9..1 Start / Stop condition Each communication session is initiated by a STRT condition and ends with a STOP condition. STRT condition is initiated by a HIGH to LOW transition of the SD while a STOP is generated by a LOW to HIGH transition. Both changes must be done while the SCL is HIGH (see the figure) SCL SD STRT Figure 18: Start / Stop conditions of I C STOP 9.. Device addressing The master is addressing the slave device by sending an 7-bit slave address after the STRT condition. The first seven bits are dedicated for the address and the 8 th is Read/Write (R/W) bit. This bit indicates the direction of the transfer: Read (HIGH) means that the master will read the data from the slave Write (LOW) means that the master will send data to the slave Mlx9060 is responding to different slave addresses: R/W R/W 9..3 cknowledge Figure 19: I C addresses for access to internal EEPROM For access to IR array data During the 9 th lock following every byte transfer the transmitter releases the SD line. The receiver acknowledges (C) receiving the byte by pulling SD line to low or does not acknowledge (NoC) by letting the SD HIGH Low level communication operation The low level operation communication is based on 8bits (1byte) transmissions. This includes start/stop event, acknowledgement and errors detection. Figure 0: I C communication Page 6 of 40 Datasheet IR16x4 SUNSTR 自动化

27 SUNSTR 传感与控制 Device modes The device can operate in following modes: Normal mode Normal mode In this mode the measurements are constantly running. Depending on the selected frame rate Fps in ConfReg, the data for IR pixels and Ta will be updated in the RM each 1/Fps seconds. In this mode the external microcontroller has full access to the internal registers and memories of the device (both for and EEPROM chip) Page 7 of 40 Datasheet IR16x4 SUNSTR 自动化

28 SUNSTR 传感与控制 Communication to IR array Read command Opcode 0x0. The read command is used to read measurement, configuration and other data from the chip to the external master. The read command has the following parameters: - Start address 8bits. ddress in the chip address space (0 to 55). It is the address of the first word read. - ddress step 8bits. On every read word the next address is formed by adding the address step to the current address. - Number of reads 8bits. Number of the words to be read. Different combinations are possible in order to read all, one line, one column, one exact pixel of the IR or Ta sensors. They are summarized in the table below: Sensors read Start address ddress step Number of reads ll IR 0x00 0x01 0x40 One line IR(i) i 0x04 0x10 One column IR( j*0x04 0x01 0x04 One pixel IR(i, I + j*0x04 0x00 0x01 Table 17 RM readout options S T R T Slave address 0 C Read Opcode C Start address parameter C ddress step parameter C Number reads parameter C S T R T Slave address 1 C Read Word0 LSByte C Read Word0 MSByte C Read WordN LSByte C Read WordN MSByte C S T O P Read N 16bit words Figure 1: RM readout command structure Page 8 of 40 Datasheet IR16x4 SUNSTR 自动化

29 SUNSTR 传感与控制 Opcode 0x Write configuration register command This command is used to set the configuration register (16bits) value all configuration settings. Each data byte is transmitted in two stages: - First stage Data byte - 0x55 - Second stage Data byte This way of transmitting the data is done in order to have a simple error check. The chip adds 0x55 to the first byte and compares the result with the second one. If both match the configuration register is updated. Opcode 0x04. Figure : Configuration register update command structure Write trimming command This command is used to set the oscillator trimming oscillator trimming value. This command is used to set the oscillator trimming register (16bits) value. Each data byte is transmitted in two stages: - First stage Data byte - 0x - Second stage Data byte This way of transmitting the data is done in order to have a simple error check. The chip adds 0x to the first byte and compares the result with the second one. If both match the oscillator trimming register is updated. S T R T Slave address 0 C Write trimming opcode Trimming data check LSByte C C Trimming data LSByte Trimming data check MSByte C C Trimming data MSByte C S T O P Figure 3: Oscillator trimming register update command structure Page 9 of 40 Datasheet IR16x4 SUNSTR 自动化

30 SUNSTR 传感与控制 Communication to EEPROM See datasheet of 40. This can be found at Page 30 of 40 Datasheet IR16x4 SUNSTR 自动化

31 SUNSTR 传感与控制 10 Performance Graphs 10.1 Temperature accuracy of the ll accuracy specifications apply under settled isothermal conditions only. Furthermore, the accuracy is only valid if the object fills the FOV of the sensor completely. 300 C To, C 00 C 100 C ±4 C ±3% * To-Ta (Uniformity ±1 C ±1.5%* To-Ta ) ±1 C ±3% * To-Ta (Uniformity ±1 C ±1.5%* To-Ta ) ±.5 C ±3%* To-Ta (Uniformity ±1 C ±1.5%* To-Ta ) 0 C -0 C ±5.5 C ±3 C ±5% * To-Ta ±4 C ±5% * To-Ta -0 C 0 C 50 C 85 C Figure 4: bsolute temperature accuracy for the central four pixels Ta, C NOTE: The accuracy is specified for the four central pixels. The accuracy of the rest of the pixels is according to the uniformity statement NOTE: For certain combinations of Tambient and Tobject, there can be an additional measurement deviation of ± 3 C for object temperatures around room temperature, lowering to 1 C for object temperatures around 00 C. This higher deviation occurs in limited, localised temperature regions. ll accuracy specifications apply under settled isothermal conditions only Page 31 of 40 Datasheet IR16x4 SUNSTR 自动化

32 SUNSTR 传感与控制 Field Of View (FOV) Point heat source Sensitivity 100% 50% Field Of View Rotated sensor ngle of incidence Figure 5: Field Of View measurement The specified FOV is calculated for the wider direction, in this case for the 16 pixels. ngular alignment must be 5% of specified FOV and will be valid for both directions. For example for the 60 deg FOV in wider direction will come with 16.4 deg in shorter direction. FOV X direction Y direction Typ Typ Wide Medium Table 18 vailable FOV options Page 3 of 40 Datasheet IR16x4 SUNSTR 自动化

33 SUNSTR 传感与控制 11 pplications Information 11.1 Use of the thermometer in SMBus configuration MCU VDD =.5...5V VDD SENSOR VDD =.6V VDD1 - SD 3 - VDD MCU 1 - SCL 4 - VSS Figure 6: SMBus connection Figure 6 shows the connection of a to a SMBus with 3.3V power supply. The has diode clamps SD/SCL to Vdd so it is necessary to provide with power in order not to load the SMBus lines. 1 pplication Comments Significant contamination at the optical input side (sensor filter) might cause unknown additional filtering/distortion of the optical signal and therefore result in unspecified errors. IR sensors are inherently susceptible to errors caused by thermal gradients. There are physical reasons for these phenomena and, in spite of the careful design of the xxx, it is recommended not to subject the to heat transfer and especially transient conditions. The is designed and calibrated to operate as a non contact thermometer in settled conditions. Using the thermometer in a very different way will result in unknown results. Capacitive loading on a I C can degrade the communication. Some improvement is possible with use of current sources compared to resistors in pull-up circuitry. Further improvement is possible with specialized commercially available bus accelerators. With the additional improvement is possible by increasing the pull-up current (decreasing the pull-up resistor values). Input levels for I C compatible mode have higher overall tolerance than the I C specification, but the output low level is rather low even with the high-power I C specification for pull-up currents. nother option might be to go for a slower communication (clock speed), as the implements Schmidt triggers on its inputs in I C compatible mode and is therefore not really sensitive to rise time of the bus (it is more likely the rise time to be an issue than the fall time, as far as the I C systems are open drain with pull-up). Power dissipation within the package may affect performance in two ways: by heating the ambient sensitive element significantly beyond the actual ambient temperature, as well as by causing gradients over the package that will inherently cause thermal gradient over the cap Page 33 of 40 Datasheet IR16x4 SUNSTR 自动化

34 SUNSTR 传感与控制 Power supply decoupling capacitor is needed as with most integrated circuits. is a mixed-signal device with sensors, small signal analog part, digital part and I/O circuitry. In order to keep the noise low power supply switching noise needs to be decoupled. High noise from external circuitry can also affect noise performance of the device. In many applications a 100nF SMD ceramic capacitor close to the Vdd and Vss pins would be a good choice. It should be noted that not only the trace to the Vdd pin needs to be short, but also the one to the Vss pin. Using with short pins improves the effect of the power supply decoupling. Check for most recent application notes about Page 34 of 40 Datasheet IR16x4 SUNSTR 自动化

35 SUNSTR 传感与控制 13 Standard information regarding manufacturability of Melexis products with different soldering processes Our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity level according to following test methods: Wave Soldering THD s (Through Hole Devices) EI/JEDEC JESD-B106 and EN Resistance to soldering temperature for through-hole mounted devices Iron Soldering THD s (Through Hole Devices) EN Resistance to soldering temperature for through-hole mounted devices Solderability THD s (Through Hole Devices) EI/JEDEC JESD-B10 and EN Solderability For all soldering technologies deviating from above mentioned standard conditions (regarding peak temperature, temperature gradient, temperature profile etc) additional classification and qualification tests have to be agreed upon with Melexis. Melexis is contributing to global environmental conservation by promoting lead free solutions. For more information on qualifications of RoHS compliant products (RoHS = European directive on the Restriction Of the use of certain Hazardous Substances) please visit the quality page on our website: The is RoHS compliant 14 ESD Precautions Electronic semiconductor products are sensitive to Electro Static Discharge (ESD). lways observe Electro Static Discharge control procedures whenever handling semiconductor products Page 35 of 40 Datasheet IR16x4 SUNSTR 自动化

36 SUNSTR 传感与控制 15 FQ When I measure aluminum and plastic parts settled at the same conditions I get significant rrors on aluminum. Why? Different materials have different emissivity. typical value for aluminum (roughly polished) is 0.18 and for plastics values of are typical. IR thermometers use the radiation flux between the sensitive element in the sensor and the object of interest, given by the equation 4 4 T Fa b. T. q., Where: 1 and are the emissivities of the two objects, 1 is the absorptivity of the sensor (in this case), is the Stefan-Boltzmann constant, 1 and are the surface areas involved in the radiation heat transfer, F a-b is the shape factor, T 1 and T are known temperature of the sensor die (measured with specially integrated and calibrated element) and the object temperature that we need. Note that these are all in elvin, heat exchange knows only physics. When a body with low emissivity (such as aluminum) is involved in this heat transfer, the portion of the radiation incident to the sensor element that really comes from the object of interest decreases and the reflected environmental IR emissions take place. (This is all for bodies with zero transparency in the IR band.) The IR thermometer is calibrated to stay within specified accuracy but it has no way to separate the incoming IR radiation into real object and reflected environmental part. Therefore, measuring objects with low emissivity is a very sophisticated issue and infra-red measurements of such materials are a specialized field. What can be done to solve that problem? Look at paintings for example, oil paints are likely to have emissivity of but keep in mind that the stability of the paint emissivity has inevitable impact on measurements. It is also a good point to keep in mind that not everything that looks black is black also for IR. For example, even heavily oxidized aluminum has still emissivity as low as How high is enough? Not an easy question but, in all cases the closer you need to get to the real object temperature the higher the needed emissivity will be, of course. With the real life emissivity values the environmental IR comes into play via the reflectivity of the object (the sum of Emissivity, Reflectivity and bsorptivity gives 1.00 for any material). The larger the difference between environmental and object temperature is at given reflectivity (with an opaque for IR material reflectivity equals 1.00 minus emissivity) the bigger errors it produces. fter I put the in the dashboard I start getting errors larger than specified in spite that the module was working properly before that. Why? ny object present in the FOV of the module provides IR signal. It is actually possible to introduce error in the measurements if the module is attached to the dashboard with an opening that enters the FOV. In that case portion of the dashboard opening will introduce IR signal in conjunction with constraining the effective FOV and thus compromising specified accuracy. Relevant opening that takes in account the FOV is a must for accurate measurements. Note that the basic FOV specification takes 50% of IR signal as threshold (in order to define the area, where the measurements are relevant), while the entire FOV at lower level is capable of introducing lateral IR signal under many conditions. When a hot (cold) air stream hits my some error adds to the measured temperature I read. What is it? IR sensors are inherently sensitive to difference in temperatures between the sensitive element and everything incident to that element. s a matter of fact, this element is not the sensor package, but the sensor die inside. Therefore, a thermal gradient over the sensor package will inevitably result in additional IR flux Page 36 of 40 Datasheet IR16x4 SUNSTR 自动化

37 SUNSTR 传感与控制 between the sensor package and the sensor die. This is real optical signal that can not be segregated from the target IR signal and will add errors to the measured temperature. Thermal gradients with impact of that kind are likely to appear during transient conditions. The sensor used is developed with care about sensitivity to this kind of lateral phenomena, but their nature demands some care when choosing place to use the in order to make them negligible. I measure human body temperature and I often get measurements that significantly differ from the +37 C I expect. IR measurements are true surface temperature measurements. In many applications this means that the actual temperature measured by an IR thermometer will be temperature of the clothing and not the skin temperature. Emissivity (explained first in this section) is another issue with clothes that has to be considered. There is also the simple chance that the measured temperature is adequate for example, in a cold winter human hand can appear at temperatures not too close to the well known +37 C. I consider using to measure temperature within car compartment, but I am embarrassed about the Sun light that may hit the module. Is it a significant issue? Special care is taken to cut off the visible light spectra as well as the NIR (near IR) before it reaches the sensitive sensor die. Even more, the glass (in most cases) is not transparent to the IR radiation used by the. Glass has temperature and really high emissivity in most cases it is black for IR of interest. Overall, Sun behind a window is most likely to introduce relatively small errors. Why it is not completely eliminated after all? Even visible light partially absorbed in the filter of the sensor has some heating potential and there is no way that the sensor die will be blind for that heating right in front of it Page 37 of 40 Datasheet IR16x4 SUNSTR 自动化