****** bjt model parameters tnom= temp= *****

Size: px
Start display at page:

Download "****** bjt model parameters tnom= temp= *****"

Transcription

1 ****** HSPICE H BIT (Feb ) RHEL64 ****** Copyright (C) 2013 Synopsys, Inc. All Rights Reserved. Unpublished rights reserved under US copyright laws. This program is protected by law and is subject to the terms and conditions of the license agreement from Synopsys. Use of this program is your acceptance to be bound by the license agreement. HSPICE is the trademark of Synopsys, Inc. Input File: ProjectBJTCascodeResBiased2001.sp Command line options: ProjectBJTCascodeResBiased2001.sp lic: lic: FLEXlm: v lic: USER: davis HOSTNAME: boomhauer lic: HOSTID: 00248c5a712b PID: lic: Using FLEXlm license file: lic: 27001@nautilus lic: Checkout 1 hspice lic: License/Maintenance for hspice will expire on 07 mar 2014/ lic: 1(in_use)/50(total) FLOATING license(s) on SERVER nautilus lic: 1****** HSPICE H BIT (Feb ) RHEL64 ****** ****** *design example 1 ****** bjt model parameters tnom= temp= ***** ************************************************************************ *** bjt model parameters model name: 0:t2n5089 model type:npn *** ************************************************************************ names values units names values units names values units

2 1*** basic dc parameters *** level= 1.00 bf= 1.43k br= 1.26 brs= 0. bulk= gnd is= 5.91f amps iss= 0. amps nf= 1.00 nr= 1.00 ns= 1.00 ibe= 0. amps ibc= 0. amps subs= 1.00 expli= 0. amps 2*** low current beta degradation effect parameters *** isc= 0. amps ise= 5.91f amps nc= 2.00 ne= *** base width modulation parameters *** vaf= volts var= 0. volts 4*** high current beta degradation effect parameters *** ikf= 15.40m amps nkf= m ikr= 0. amps 5*** parasitic resistor parameters *** irb= 0. amps rb= ohms rbm= ohms re= 0. ohms rc= 1.61 ohms rcc= 0. ohms vo= 0. volts gamma= 0. 6*** junction capacitor parameters *** cbcp= 0. farad cbep= 0. farad ccsp= 0. farad cjc= 4.02p farad cje= 4.97p farad cjs= 0. farad fc= m mjc= m mje= m mjs= m vjc= m volts vje= m volts vjs= m volts xcjc= 1.00 qco= 0. coul 7*** transit time parameters *** itf= m amps ptf= 0. deg k tf= p secs tr= 4.67n secs vtf= 4.00 xtf= 7.00

3 8*** temperature compensation parameters *** tlev= 0. tlevc= 0. tre1= 0. /deg tre2= 0. /deg2 trb1= 0. /deg trc1= 0. /deg trb2= 0. /deg2 trm1= 0. /deg xtb= 1.50 trm2= 0. /deg2 xti= 3.00 cte= 0. /deg ctc= 0. /deg cts= 0. /deg trc2= 0. /deg2 tref= deg c bex= 2.42 bexv= *** noise parameters *** kf= 0. af= 1.00 **warning** (ProjectBJTCascodeResBiased2001.sp:44) Could not find branch eleme nt re ;branch output ignored ***************************************************************** ****** option summary ****** runlvl = 3 bypass = 2 1****** HSPICE H BIT (Feb ) RHEL64 ****** ****** *design example 1 ****** operating point information tnom= temp= ***** ***** operating point status is all simulation time is 0. node =voltage node =voltage node =voltage +0:2 = :3 = :5 = :6 = 0. 0:7 = 0. 0:8 = 0. +0:22 = :33 = :vcc =

4 **** voltage sources element 0:vcc 0:vin volts current u 0. power u 0. total voltage source power dissipation= u watts **** resistors element 0:rs 0:r11 0:r12 0:re1 0:r21 0:r22 r value x x x x x v drop current n n u n n power u u u u u element 0:rc2 0:rl r value x x v drop current u 0. power u 0. **** bipolar junction transistors

5 element 0:q1 0:q2 model 0:t2n5089 0:t2n5089 ib n n ic u u vbe m m vce vbc vs power u u betad gm u u rpi x x rx ro x x cpi p p cmu p p cbx ccs betaac ft k k **warning** zero value is used for the non existance output variable in the expression. you may have output variables with a long path name.

6 **** the results of the sqrt of integral (v**2 / freq) using more points from fstart to fstop results in more accurate total noise values. **** total output noise voltage = u volts **** total equivalent input noise = m 1****** HSPICE H BIT (Feb ) RHEL64 ****** ****** *design example 1 ****** operating point information tnom= temp= ***** ***** operating point status is all simulation time is u node =voltage node =voltage node =voltage +0:2 = :3 = :5 = :6 = m 0:7 = u 0:8 = a +0:22 = :33 = :vcc = **** voltage sources element 0:vcc 0:vin volts a current u n power u 8.059e 24 total voltage source power dissipation= u watts **** resistors

7 element 0:rs 0:r11 0:r12 0:re1 0:r21 0:r22 r value x x x x x v drop u current n n n u n n power p u u u u u element 0:rc2 0:rl r value x x v drop m current u n power u n **** bipolar junction transistors element 0:q1 0:q2 model 0:t2n5089 0:t2n5089 ib n n ic u u vbe m m vce vbc vs power u u betad gm u u rpi x x

8 rx ro x x cpi p p cmu p p cbx ccs betaac ft k k **** the results of the sqrt of integral (v**2 / freq) using more points from fstart to fstop results in more accurate total noise values. **** total output noise voltage = u volts **** total equivalent input noise = m 1****** HSPICE H BIT (Feb ) RHEL64 ****** ****** *design example 1 ****** operating point information tnom= temp= ***** ***** operating point status is all simulation time is u node =voltage node =voltage node =voltage +0:2 = :3 = :5 = :6 = m 0:7 = u 0:8 = a +0:22 = :33 = :vcc =

9 **** voltage sources element 0:vcc 0:vin volts a current u n power u 1.639e 23 total voltage source power dissipation= u watts **** resistors element 0:rs 0:r11 0:r12 0:re1 0:r21 0:r22 r value x x x x x v drop u current n n n u n n power p u u u u u element 0:rc2 0:rl r value x x v drop m current u n power u p **** bipolar junction transistors

10 element 0:q1 0:q2 model 0:t2n5089 0:t2n5089 ib n n ic u n vbe m m vce vbc vs power u u betad gm u u rpi x x rx ro x x cpi p p cmu p p cbx ccs betaac ft k k **** the results of the sqrt of integral (v**2 / freq) using more points from fstart to fstop results in more accurate total noise values.

11 **** total output noise voltage = u volts **** total equivalent input noise = m 1****** HSPICE H BIT (Feb ) RHEL64 ****** ****** *design example 1 ****** operating point information tnom= temp= ***** ***** operating point status is all simulation time is u node =voltage node =voltage node =voltage +0:2 = :3 = :5 = :6 = m 0:7 = u 0:8 = a +0:22 = :33 = :vcc = **** voltage sources element 0:vcc 0:vin volts a current u n power u 4.216e 23 total voltage source power dissipation= u watts **** resistors element 0:rs 0:r11 0:r12 0:re1 0:r21 0:r22 r value x x x x x

12 v drop u current n n n u n n power p u u u u u element 0:rc2 0:rl r value x x v drop m current u n power u n **** bipolar junction transistors element 0:q1 0:q2 model 0:t2n5089 0:t2n5089 ib n n ic u u vbe m m vce vbc vs power u u betad gm u u rpi x x rx ro x x cpi p p cmu p p

13 cbx ccs betaac ft k k **** the results of the sqrt of integral (v**2 / freq) using more points from fstart to fstop results in more accurate total noise values. **** total output noise voltage = u volts **** total equivalent input noise = m ***** job concluded 1****** HSPICE H BIT (Feb ) RHEL64 ****** ****** *design example 1 ****** job statistics summary tnom= temp= ***** ****** Machine Information ****** CPU: model name : Intel(R) Core(TM) i7 CPU 2.67GHz cpu MHz : OS: Linux version URI_Build_AMD64 (root@boomhauer) (gcc version (Gen

14 too p1.0, pie 0.4.7) ) #2 SMP PREEMPT Mon Apr 29 19:32:51 EDT 2013 ****** HSPICE Threads Information ****** Command Line Threads Count : 1 Available CPU Count : 8 Actual Threads Count : 1 ****** Circuit Statistics ****** # nodes = 14 # elements = 16 # resistors = 8 # capacitors = 4 # inductors = 0 # mutual_inds = 0 # vccs = 0 # vcvs = 0 # cccs = 0 # ccvs = 0 # volt_srcs = 2 # curr_srcs = 0 # diodes = 0 # bjts = 2 # jfets = 0 # mosfets = 0 # U elements = 0 # T elements = 0 # W elements = 0 # B elements = 0 # S elements = 0 # P elements = 0 # va device = 0 # vector_srcs = 0 # N elements = 0 ****** Runtime Statistics (seconds) ****** analysis time # points tot. iter conv.iter op point ac analysis transient rev= 0 readin 0.00 errchk 0.00 setup 0.00 output 0.00

15 peak memory used megabytes total cpu time 0.92 seconds total elapsed time 1.13 seconds job started at 17:03:13 07/09/2013 job ended at 17:03:14 07/09/2013 lic: Release hspice token(s) lic: total license checkout elapse time: 0.21(s)

Bipolar Junction Transistor (BJT) Model. Model Kind. Model Sub-Kind. SPICE Prefix. SPICE Netlist Template Format

Bipolar Junction Transistor (BJT) Model. Model Kind. Model Sub-Kind. SPICE Prefix. SPICE Netlist Template Format Bipolar Junction Transistor (BJT) Model Old Content - visit altiumcom/documentation Modified by Admin on Sep 13, 2017 Model Kind Transistor Model Sub-Kind BJT SPICE Prefix Q SPICE Netlist Template Format

More information

Symbolic SPICE TM Circuit Analyzer and Approximator

Symbolic SPICE TM Circuit Analyzer and Approximator Symbolic SPICE Symbolic SPICE TM Circuit Analyzer and Approximator Application Note AN-006: Magnetic Microphone Amplifier by Gregory M. Wierzba Rev 072010 A) Introduction The schematic shown below in Fig.

More information

BIPOLAR JUNCTION TRANSISTOR MODELING

BIPOLAR JUNCTION TRANSISTOR MODELING BIPOLAR JUNCTION TRANSISTOR MODELING Introduction Operating Modes of the Bipolar Transistor The Equivalent Schematic and the Formulas of the SPICE Gummel-Poon Model A Listing of the Gummel-Poon Parameters

More information

Type Marking Pin Configuration Package BGA427 BMs 1, IN 2, GND 3, +V 4, Out SOT343. Maximum Ratings Parameter Symbol Value Unit Device current I D

Type Marking Pin Configuration Package BGA427 BMs 1, IN 2, GND 3, +V 4, Out SOT343. Maximum Ratings Parameter Symbol Value Unit Device current I D BGA7 SiMMICAmplifier in SIEGET Technologie Cascadable 0 Ωgain block Unconditionally stable Gain S = 8. db at.8 GHz (Appl.) gain S = db at.8 GHz (Appl.) IP out = +7 dbm at.8 GHz (V D =V, I D =9.mA) Noise

More information

BFR93A. NPN Silicon RF Transistor. For low-noise, high-gain broadband amplifiers at collector currents from 2 ma to 30 ma

BFR93A. NPN Silicon RF Transistor. For low-noise, high-gain broadband amplifiers at collector currents from 2 ma to 30 ma NPN Silicon RF Transistor For lownoise, highgain broadband amplifiers at collector currents from ma to ma VPS5 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin

More information

Type Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23 NPN Silicon RF Transistor* For broadband amplifiers up to GHz and fast nonsaturated switches at collector currents from 0.5 ma to 0 ma Complementary type: BFT9 (PNP) * Short term description ESD (Electrostatic

More information

BFP193. NPN Silicon RF Transistor*

BFP193. NPN Silicon RF Transistor* NPN Silicon RF Transistor* For low noise, highgain amplifiers up to GHz For linear broadband amplifiers f T = 8 GHz, F = db at 900 MHz * Short term description ESD (Electrostatic discharge) sensitive device,

More information

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR183W RHs 1=B 2=E 3=C SOT323

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR183W RHs 1=B 2=E 3=C SOT323 NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 8 GHz, F = 0.9 db at 900 MHz Pbfree (RoHS compliant) package ) Qualified according AEC

More information

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR181 RFs 1=B 2=E 3=C SOT23

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR181 RFs 1=B 2=E 3=C SOT23 NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from 0.5 ma to ma f T = 8 GHz, F = 0.9 db at 900 MHz Pbfree (RoHS compliant) package ) Qualified according

More information

BFP196W. NPN Silicon RF Transistor*

BFP196W. NPN Silicon RF Transistor* NPN Silicon RF Transistor* For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 ma to 80 ma Power amplifier for DECT

More information

DATA SHEET. PRF957 UHF wideband transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Mar 01.

DATA SHEET. PRF957 UHF wideband transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Mar 01. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D1 Supersedes data of 1999 Mar 1 1999 Jul 3 FEATURES PINNING Small size Low noise Low distortion High gain Gold metallization ensures excellent reliability.

More information

BFP193. NPN Silicon RF Transistor* For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers f T = 8 GHz, F = 1 db at 900 MHz

BFP193. NPN Silicon RF Transistor* For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers f T = 8 GHz, F = 1 db at 900 MHz NPN Silicon RF Transistor* For low noise, highgain amplifiers up to GHz For linear broadband amplifiers f T = 8 GHz, F = db at 900 MHz Pbfree (RoHS compliant) package ) Qualified according AEC Q * Short

More information

BFP196W. NPN Silicon RF Transistor*

BFP196W. NPN Silicon RF Transistor* NPN Silicon RF Transistor* For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 ma to 80 ma Power amplifier for DECT

More information

Berkeley. Two-Port Noise. Prof. Ali M. Niknejad. U.C. Berkeley Copyright c 2014 by Ali M. Niknejad. September 13, 2014

Berkeley. Two-Port Noise. Prof. Ali M. Niknejad. U.C. Berkeley Copyright c 2014 by Ali M. Niknejad. September 13, 2014 Berkeley Two-Port Noise Prof. Ali M. U.C. Berkeley Copyright c 2014 by Ali M. September 13, 2014 Noise Figure Review Recall that the noise figure of a two-port is defined by F = P N s + P Na P Ns = 1 +

More information

Charge-Storage Elements: Base-Charging Capacitance C b

Charge-Storage Elements: Base-Charging Capacitance C b Charge-Storage Elements: Base-Charging Capacitance C b * Minority electrons are stored in the base -- this charge q NB is a function of the base-emitter voltage * base is still neutral... majority carriers

More information

Semiconductor Device Modeling and Characterization EE5342, Lecture 15 -Sp 2002

Semiconductor Device Modeling and Characterization EE5342, Lecture 15 -Sp 2002 Semiconductor Device Modeling and Characterization EE5342, Lecture 15 -Sp 2002 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/ L15 05Mar02 1 Charge components in the BJT From Getreau,

More information

PSpice components for CAD

PSpice components for CAD PSpice components for CAD POLITEHNICA University of Bucharest, UPB-CETTI, Spl. Independentei 313, 060042-Bucharest, Romania, Phone: +40 21 3169633, Fax: +40 21 3169634, email: norocel.codreanu@cetti.ro

More information

Realization of Tunable Pole-Q Current-Mode OTA-C Universal Filter

Realization of Tunable Pole-Q Current-Mode OTA-C Universal Filter Circuits Syst Signal Process (2010) 29: 913 924 DOI 10.1007/s00034-010-9189-1 Realization of Tunable Pole-Q Current-Mode OTA-C Universal Filter Pipat Prommee Thanate Pattanatadapong Received: 23 February

More information

Semiconductor Device Modeling and Characterization EE5342, Lecture 16 -Sp 2002

Semiconductor Device Modeling and Characterization EE5342, Lecture 16 -Sp 2002 Semiconductor Device Modeling and Characterization EE5342, Lecture 16 -Sp 2002 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/ L16 07Mar02 1 Gummel-Poon Static npn Circuit Model C RC Intrinsic

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BFT93W PNP 4 GHz wideband transistor. Product specification Supersedes data of November 1992

DISCRETE SEMICONDUCTORS DATA SHEET. BFT93W PNP 4 GHz wideband transistor. Product specification Supersedes data of November 1992 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data o November 199 March 1994 FEATURES High power gain Gold metallization ensures excellent reliability SOT33 (S-mini) package. APPLICATIONS It is intended

More information

4-Bit ALU Circuit Glitch Reduction for Power Optimization

4-Bit ALU Circuit Glitch Reduction for Power Optimization 4-Bit ALU Circuit Glitch Reduction for Power Optimization For ELEC 6270 Dr. Vishwani D. Agrawal By Hunter Thorington Fall 2015 Abstract ELEC 6270 is an elective offered by Auburn University s Dr. Vishwani

More information

Lecture Notes for ECE 215: Digital Integrated Circuits

Lecture Notes for ECE 215: Digital Integrated Circuits Lecture Notes for ECE 215: Digital Integrated Circuits J. E. Ayers Electrical and Computer Engineering Department University of Connecticut 2002 All rights reserved University of Connecticut 1 Introduction

More information

University of Pittsburgh

University of Pittsburgh University of Pittsburgh Experiment #8 Lab Report The Bipolar Junction Transistor: Characteristics and Models Submission Date: 11/6/2017 Instructors: Dr. Minhee Yun John Erickson Yanhao Du Submitted By:

More information

ELEC3106 Electronics: lecture 7 summary. SPICE simulations. Torsten Lehmann

ELEC3106 Electronics: lecture 7 summary. SPICE simulations. Torsten Lehmann ELEC3106, Electronics SPICE simulations 1 ELEC3106 Electronics: lecture 7 summary SPICE simulations Torsten Lehmann School of Electrical Engineering and Telecommunication The University of New South Wales

More information

Diode Model (PN-Junction Diode Model)

Diode Model (PN-Junction Diode Model) Diode Model (PN-Junction Diode Model) Diode_Model (PN-Junction Diode Model) Symbol Parameters Model parameters must be specified in SI units. Name Description Units Default Level Model level selector (1=standard,

More information

SPICE Differentiation Mike Engelhardt

SPICE Differentiation Mike Engelhardt SPICE Differentiation Mike Engelhardt Analog design engineers lean heavily on simulation to predict circuit performance. The value of a simulator hangs on how well it can predict physical reality, and

More information

Analog Simulation. Digital simulation. Analog simulation. discrete values. discrete timing. continuous values. continuous timing

Analog Simulation. Digital simulation. Analog simulation. discrete values. discrete timing. continuous values. continuous timing Analog Simulation Digital simulation discrete values bit, boolean, enumerated, integer exception - floating point discrete timing cycle based - uniform time intervals event based - nonuniform time intervals

More information

ATS177. General Description. Features. Applications. Ordering Information SINGLE OUTPUT HALL EFFECT LATCH ATS177 - P L - X - X

ATS177. General Description. Features. Applications. Ordering Information SINGLE OUTPUT HALL EFFECT LATCH ATS177 - P L - X - X Features General Description 3.5V to 20V DC operation voltage Temperature compensation Wide operating voltage range Open-Collector pre-driver 25mA maximum sinking output current Reverse polarity protection

More information

ECE251. VLSI System Design

ECE251. VLSI System Design ECE251. VLSI System Design Project 4 SRAM Cell and Memory Array Operation Area Memory core 4661 mm 2 (256bit) Row Decoder 204.7 mm 2 Collumn Decoder Overall Design Predecoder 156.1 mm 2 Mux 629.2 mm 2

More information

Block Diagram 1 REG. VCC 2 Hall Plate Amp B 3 GND 4 Pin Assignment 277 (276) Front View 1 : VCC 2 : 3 : B :GND Name P/I/O Pin # Desc

Block Diagram 1 REG. VCC 2 Hall Plate Amp B 3 GND 4 Pin Assignment 277 (276) Front View 1 : VCC 2 : 3 : B :GND Name P/I/O Pin # Desc E-MAIL: Features - On-chip Hall sensor with two different sensitivity and hysteresis settings for - 3.5V to 2V operating voltage - 4mA (avg) output sink current - Build-in protecting diode only for chip

More information

Status of HICUM/L2 Model

Status of HICUM/L2 Model Status of HICUM/L2 Model A. Pawlak 1), M. Schröter 1),2), A. Mukherjee 1) 1) CEDIC, University of Technology Dresden, Germany 2) Dept. of Electrical and Computer Engin., University of Calif. at San Diego,

More information

Review of Band Energy Diagrams MIS & MOS Capacitor MOS TRANSISTORS MOSFET Capacitances MOSFET Static Model

Review of Band Energy Diagrams MIS & MOS Capacitor MOS TRANSISTORS MOSFET Capacitances MOSFET Static Model Content- MOS Devices and Switching Circuits Review of Band Energy Diagrams MIS & MOS Capacitor MOS TRANSISTORS MOSFET Capacitances MOSFET Static Model A Cantoni 2009-2013 Digital Switching 1 Content- MOS

More information

E40M Review - Part 1

E40M Review - Part 1 E40M Review Part 1 Topics in Part 1 (Today): KCL, KVL, Power Devices: V and I sources, R Nodal Analysis. Superposition Devices: Diodes, C, L Time Domain Diode, C, L Circuits Topics in Part 2 (Wed): MOSFETs,

More information

ATS276 X - P X - B - X. Lead Free L : Lead Free G : Green

ATS276 X - P X - B - X. Lead Free L : Lead Free G : Green Features General Description On-Chip Hall Sensor with Two Different Sensitivity and Hysteresis Settings for ATS276 3.5V to 2V Operating Voltage 4mA (avg.) Output Sink Current Built-in Protecting Diode

More information

Chapter 13 Small-Signal Modeling and Linear Amplification

Chapter 13 Small-Signal Modeling and Linear Amplification Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 13-1 Chapter Goals Understanding of concepts related to: Transistors

More information

ECE 304: Bipolar Capacitances E B C. r b β I b r O

ECE 304: Bipolar Capacitances E B C. r b β I b r O ECE 34: Bipolar Capacitances The Bipolar Transistor: S&S pp. 485497 Let s apply the diode capacitance results to the bipolar transistor. There are two junctions in the bipolar transistor. The BC (basecollector)

More information

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS DESCRIPTION The / optocouplers consist of an AlGaAS LED, optically coupled to a very high speed integrated photo-detector logic gate with a strobable output. The devices are housed in a compact small-outline

More information

(213) N E W S L E T T E R. Hidden within based computers is a full 32 bit architecture that breaks 640 Kbyte program

(213) N E W S L E T T E R. Hidden within based computers is a full 32 bit architecture that breaks 640 Kbyte program (213) 833-0710 Personal Computer Circuit Design Tools N E W S L E T T E R Copyright intusoft, July 1988 Introducing IS_SPICE/386 Faster than a VAX 11/780 Hidden within 80386 based computers is a full 32

More information

Chapter 5. BJT AC Analysis

Chapter 5. BJT AC Analysis Chapter 5. Outline: The r e transistor model CB, CE & CC AC analysis through r e model common-emitter fixed-bias voltage-divider bias emitter-bias & emitter-follower common-base configuration Transistor

More information

E2.2 Analogue Electronics

E2.2 Analogue Electronics E2.2 Analogue Electronics Instructor : Christos Papavassiliou Office, email : EE 915, c.papavas@imperial.ac.uk Lectures : Monday 2pm, room 408 (weeks 2-11) Thursday 3pm, room 509 (weeks 4-11) Problem,

More information

Section 1: Common Emitter CE Amplifier Design

Section 1: Common Emitter CE Amplifier Design ECE 3274 BJT amplifier design CE, CE with Ref, and CC. Richard Cooper Section 1: CE amp Re completely bypassed (open Loop) Section 2: CE amp Re partially bypassed (gain controlled). Section 3: CC amp (open

More information

1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp)

1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) HW 3 1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) a) Obtain in Spice the transistor curves given on the course web page except do in separate plots, one for the npn

More information

EE100Su08 Lecture #9 (July 16 th 2008)

EE100Su08 Lecture #9 (July 16 th 2008) EE100Su08 Lecture #9 (July 16 th 2008) Outline HW #1s and Midterm #1 returned today Midterm #1 notes HW #1 and Midterm #1 regrade deadline: Wednesday, July 23 rd 2008, 5:00 pm PST. Procedure: HW #1: Bart

More information

ECE 497 JS Lecture - 11 Modeling Devices for SI

ECE 497 JS Lecture - 11 Modeling Devices for SI ECE 497 JS Lecture 11 Modeling Devices for SI Spring 2004 Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jose@emlab.uiuc.edu 1 Announcements Thursday Feb 26 th NO CLASS Tuesday

More information

CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE

CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE To understand Decibels, log scale, general frequency considerations of an amplifier. low frequency analysis - Bode plot low frequency response BJT amplifier Miller

More information

Chapter 9 Frequency Response. PART C: High Frequency Response

Chapter 9 Frequency Response. PART C: High Frequency Response Chapter 9 Frequency Response PART C: High Frequency Response Discrete Common Source (CS) Amplifier Goal: find high cut-off frequency, f H 2 f H is dependent on internal capacitances V o Load Resistance

More information

ECE 546 Lecture 16 MNA and SPICE

ECE 546 Lecture 16 MNA and SPICE ECE 546 Lecture 16 MNA and SPICE Spring 2018 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 546 Jose Schutt Aine 1 Nodal Analysis The Node oltage method

More information

ESE319 Introduction to Microelectronics Common Emitter BJT Amplifier

ESE319 Introduction to Microelectronics Common Emitter BJT Amplifier Common Emitter BJT Amplifier 1 Adding a signal source to the single power supply bias amplifier R C R 1 R C V CC V CC V B R E R 2 R E Desired effect addition of bias and signal sources Starting point -

More information

Physical resistor model n subtype

Physical resistor model n subtype Physical resistor model n subtype ResistorPhyN Terminal0 Terminal1 Terminal2 Description: This element implements a semiconductor resistor based on the n subtype of the Cadence physical resistor model.

More information

Tutorial #4: Bias Point Analysis in Multisim

Tutorial #4: Bias Point Analysis in Multisim SCHOOL OF ENGINEERING AND APPLIED SCIENCE DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ECE 2115: ENGINEERING ELECTRONICS LABORATORY Tutorial #4: Bias Point Analysis in Multisim INTRODUCTION When BJTs

More information

1.2 kv 16 mω 1.8 mj. Package. Symbol Parameter Value Unit Test Conditions Notes 117 V GS = 20V, T C

1.2 kv 16 mω 1.8 mj. Package. Symbol Parameter Value Unit Test Conditions Notes 117 V GS = 20V, T C CAS1H12AM1 1.2 kv, 1A Silicon Carbide Half-Bridge Module Z-FET TM MOSFET and Z-Rec TM Diode Not recommended for new designs. Replacement part: CAS12M12BM2 Features Ultra Low Loss Zero Turn-off Tail Current

More information

Advanced Design System Circuit Components Nonlinear Devices

Advanced Design System Circuit Components Nonlinear Devices Advanced Design System 2002 Circuit Components Nonlinear Devices February 2002 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty

More information

CHAPTER.4: Transistor at low frequencies

CHAPTER.4: Transistor at low frequencies CHAPTER.4: Transistor at low frequencies Introduction Amplification in the AC domain BJT transistor modeling The re Transistor Model The Hybrid equivalent Model Introduction There are three models commonly

More information

DESIGN MICROELECTRONICS ELCT 703 (W17) LECTURE 3: OP-AMP CMOS CIRCUIT. Dr. Eman Azab Assistant Professor Office: C

DESIGN MICROELECTRONICS ELCT 703 (W17) LECTURE 3: OP-AMP CMOS CIRCUIT. Dr. Eman Azab Assistant Professor Office: C MICROELECTRONICS ELCT 703 (W17) LECTURE 3: OP-AMP CMOS CIRCUIT DESIGN Dr. Eman Azab Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 TWO STAGE CMOS OP-AMP It consists of two stages: First

More information

KH600. 1GHz, Differential Input/Output Amplifier. Features. Description. Applications. Typical Application

KH600. 1GHz, Differential Input/Output Amplifier. Features. Description. Applications. Typical Application KH 1GHz, Differential Input/Output Amplifier www.cadeka.com Features DC - 1GHz bandwidth Fixed 1dB (V/V) gain 1Ω (differential) inputs and outputs -7/-dBc nd/3rd HD at MHz ma output current 9V pp into

More information

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION ECE-343 Test 2: Mar 21, 2012 6:00-8:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may

More information

Over Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C

Over Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C Description United Silicon Carbide, Inc offers the xj series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing

More information

PURPOSE: See suggested breadboard configuration on following page!

PURPOSE: See suggested breadboard configuration on following page! ECE4902 Lab 1 C2011 PURPOSE: Determining Capacitance with Risetime Measurement Reverse Biased Diode Junction Capacitance MOSFET Gate Capacitance Simulation: SPICE Parameter Extraction, Transient Analysis

More information

EE 330. Lecture 35. Parasitic Capacitances in MOS Devices

EE 330. Lecture 35. Parasitic Capacitances in MOS Devices EE 330 Lecture 35 Parasitic Capacitances in MOS Devices Exam 2 Wed Oct 24 Exam 3 Friday Nov 16 Review from Last Lecture Cascode Configuration Discuss V CC gm1 gm1 I B VCC V OUT g02 g01 A - β β VXX Q 2

More information

Examination paper for TFY4185 Measurement Technique/ Måleteknikk

Examination paper for TFY4185 Measurement Technique/ Måleteknikk Page 1 of 14 Department of Physics Examination paper for TFY4185 Measurement Technique/ Måleteknikk Academic contact during examination: Patrick Espy Phone: +47 41 38 65 78 Examination date: 15 August

More information

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low

More information

Lecture 19 - p-n Junction (cont.) October 18, Ideal p-n junction out of equilibrium (cont.) 2. pn junction diode: parasitics, dynamics

Lecture 19 - p-n Junction (cont.) October 18, Ideal p-n junction out of equilibrium (cont.) 2. pn junction diode: parasitics, dynamics 6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 19-1 Lecture 19 - p-n Junction (cont.) October 18, 2002 Contents: 1. Ideal p-n junction out of equilibrium (cont.) 2. pn junction diode:

More information

Scilab Textbook Companion for Microelectronic Circuits by A. S. Sedra And K. C. Smith 1

Scilab Textbook Companion for Microelectronic Circuits by A. S. Sedra And K. C. Smith 1 Scilab Textbook Companion for Microelectronic Circuits by A. S. Sedra And K. C. Smith 1 Created by Shruthi S.H B.Tech (pursuing) Electronics Engineering NIT, Surathkal College Teacher Mrs Rekha S, NIT

More information

CIRCUIT MODELING IN DYMOLA. Daryl Ralph Hild

CIRCUIT MODELING IN DYMOLA. Daryl Ralph Hild CIRCUIT MODELING IN DYMOLA by Daryl Ralph Hild A Thesis Submitted to the Faculty of the DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING In Partial Fulfillment of the Requirements For the Degree of MASTER

More information

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low

More information

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low

More information

Homework Assignment 08

Homework Assignment 08 Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance

More information

EE 321 Analog Electronics, Fall 2013 Homework #8 solution

EE 321 Analog Electronics, Fall 2013 Homework #8 solution EE 321 Analog Electronics, Fall 2013 Homework #8 solution 5.110. The following table summarizes some of the basic attributes of a number of BJTs of different types, operating as amplifiers under various

More information

Silicon Carbide Power Schottky Diode

Silicon Carbide Power Schottky Diode Silicon Carbide Power Schottky Diode Features 1200 V Schottky rectifier 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive temperature

More information

SOT-23 Mark: 1A. = 25 C unless otherwise noted T A. Symbol Parameter Value Units

SOT-23 Mark: 1A. = 25 C unless otherwise noted T A. Symbol Parameter Value Units B E N39 TO-9 MMBT39 SOT-3 Mark: A B E PZT39 B SOT-3 E N39 / MMBT39 / PZT39 This device is designed as a general purpse amplifier and switch. The useful dynamic range extends t ma as a switch and t MHz

More information

Homework Assignment 09

Homework Assignment 09 Homework Assignment 09 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =

More information

CCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode

CCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode CCS5M2CM2.2kV, 5A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation

More information

EE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits

EE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits EE 330 Lecture 22 Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits Exam 2 Friday March 9 Exam 3 Friday April 13 Review Session for Exam 2: 6:00

More information

CCS050M12CM2 1.2kV, 25mΩ All-Silicon Carbide Six-Pack (Three Phase) Module C2M MOSFET and Z-Rec TM Diode

CCS050M12CM2 1.2kV, 25mΩ All-Silicon Carbide Six-Pack (Three Phase) Module C2M MOSFET and Z-Rec TM Diode CCS5M2CM2.2kV, 25mΩ All-Silicon Carbide Six-Pack (Three Phase) Module C2M MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation

More information

Class E Design Formulas V DD

Class E Design Formulas V DD Class E Design Formulas V DD RFC C L+X/ω V s (θ) I s (θ) Cd R useful functions and identities Units Constants Table of Contents I. Introduction II. Process Parameters III. Inputs IV. Standard Class E Design

More information

Insulated Gate Bipolar Transistor (IGBT)

Insulated Gate Bipolar Transistor (IGBT) BUK856-8A GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated SYMBOL PARAMETER MAX. UNIT gate bipolar power transistor in a plastic envelope. V CE Collector-emitter voltage 8 V

More information

Exercise 1: RC Time Constants

Exercise 1: RC Time Constants Exercise 1: RC EXERCISE OBJECTIVE When you have completed this exercise, you will be able to determine the time constant of an RC circuit by using calculated and measured values. You will verify your results

More information

I F = 1 A, T j = 25 C I F = 1 A, T j = 175 C V R = 650 V, T j = 25 C 1 10 V R = 650 V, T j = 175 C di F /dt = 200 A/μs

I F = 1 A, T j = 25 C I F = 1 A, T j = 175 C V R = 650 V, T j = 25 C 1 10 V R = 650 V, T j = 175 C di F /dt = 200 A/μs Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive

More information

Figure (13-1) Single Thermoelectric Couple where Th > Tc

Figure (13-1) Single Thermoelectric Couple where Th > Tc Technical Brief Basics on TEG Power Generation 13.0 Power Generation 13.1 Bismuth Telluride-based thermoelectric power modules are designed primarily for cooling or combined cooling and heating applications

More information

Final Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013.

Final Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013. Final Exam Name: Max: 130 Points Question 1 In the circuit shown, the op-amp is ideal, except for an input bias current I b = 1 na. Further, R F = 10K, R 1 = 100 Ω and C = 1 μf. The switch is opened at

More information

Basic Electronics. Introductory Lecture Course for. Technology and Instrumentation in Particle Physics Chicago, Illinois June 9-14, 2011

Basic Electronics. Introductory Lecture Course for. Technology and Instrumentation in Particle Physics Chicago, Illinois June 9-14, 2011 Basic Electronics Introductory Lecture Course for Technology and Instrumentation in Particle Physics 2011 Chicago, Illinois June 9-14, 2011 Presented By Gary Drake Argonne National Laboratory drake@anl.gov

More information

CCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode

CCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode CCS5M12CM2 1.2kV, 5A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation

More information

Chapter 2. Engr228 Circuit Analysis. Dr Curtis Nelson

Chapter 2. Engr228 Circuit Analysis. Dr Curtis Nelson Chapter 2 Engr228 Circuit Analysis Dr Curtis Nelson Chapter 2 Objectives Understand symbols and behavior of the following circuit elements: Independent voltage and current sources; Dependent voltage and

More information

EE247 Analog-Digital Interface Integrated Circuits

EE247 Analog-Digital Interface Integrated Circuits EE247 Analog-Digital Interface Integrated Circuits Fall 200 Name: Zhaoyi Kang SID: 22074 ******************************************************************************* EE247 Analog-Digital Interface Integrated

More information

Electronic Circuits Summary

Electronic Circuits Summary Electronic Circuits Summary Andreas Biri, D-ITET 6.06.4 Constants (@300K) ε 0 = 8.854 0 F m m 0 = 9. 0 3 kg k =.38 0 3 J K = 8.67 0 5 ev/k kt q = 0.059 V, q kt = 38.6, kt = 5.9 mev V Small Signal Equivalent

More information

CHAPTER 3: TRANSISTOR MOSFET DR. PHAM NGUYEN THANH LOAN. Hà Nội, 9/24/2012

CHAPTER 3: TRANSISTOR MOSFET DR. PHAM NGUYEN THANH LOAN. Hà Nội, 9/24/2012 1 CHAPTER 3: TRANSISTOR MOSFET DR. PHAM NGUYEN THANH LOAN Hà Nội, 9/24/2012 Chapter 3: MOSFET 2 Introduction Classifications JFET D-FET (Depletion MOS) MOSFET (Enhancement E-FET) DC biasing Small signal

More information

case TO 252 T C = 25 C, t P = 10 ms 18

case TO 252 T C = 25 C, t P = 10 ms 18 Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive

More information

ENGR 2405 Class No Electric Circuits I

ENGR 2405 Class No Electric Circuits I ENGR 2405 Class No. 48056 Electric Circuits I Dr. R. Williams Ph.D. rube.williams@hccs.edu Electric Circuit An electric circuit is an interconnec9on of electrical elements Charge Charge is an electrical

More information

Tolerances for Electrical Design

Tolerances for Electrical Design Tolerances for Electrical Design Dr. Charles R. Tolle Department of Electrical and Computer Engineering South Dakota School of Mines and Technology April 3, 5 Tolle (SDSMT ECE) Sophomore Design 4/3/5 /

More information

Coulomb s constant k = 9x10 9 N m 2 /C 2

Coulomb s constant k = 9x10 9 N m 2 /C 2 1 Part 2: Electric Potential 2.1: Potential (Voltage) & Potential Energy q 2 Potential Energy of Point Charges Symbol U mks units [Joules = J] q 1 r Two point charges share an electric potential energy

More information

VBIC MODELING HANDBOOK

VBIC MODELING HANDBOOK -- VBIC MODELING HANDBOOK --------------------------------------------------------------- Keysight Technologies and F.Sischka www.keysight.com www.sisconsult.de VBIC Modeling Handbook /3/27 -2- Foreword

More information

.. Use of non-programmable scientific calculator is permitted.

.. Use of non-programmable scientific calculator is permitted. This question paper contains 8+3 printed pages] Roll No. S. No. of Question Paper 7981 Cnique Paper Code 1\;ame of the Paper ~ame of the Course Semester Duration : 3 Hours 2511102 Circuit Analysis [DC-1.1]

More information

Problem info Geometry model Labelled Objects Results Nonlinear dependencies

Problem info Geometry model Labelled Objects Results Nonlinear dependencies Problem info Problem type: Transient Magnetics (integration time: 9.99999993922529E-09 s.) Geometry model class: Plane-Parallel Problem database file names: Problem: circuit.pbm Geometry: Circuit.mod Material

More information

Engineering 1620 Spring 2011 Answers to Homework # 4 Biasing and Small Signal Properties

Engineering 1620 Spring 2011 Answers to Homework # 4 Biasing and Small Signal Properties Engineering 60 Spring 0 Answers to Homework # 4 Biasing and Small Signal Properties.).) The in-band Thevenin equivalent source impedance is the parallel combination of R, R, and R3. ( In-band implies the

More information

EMC Considerations for DC Power Design

EMC Considerations for DC Power Design EMC Considerations for DC Power Design Tzong-Lin Wu, Ph.D. Department of Electrical Engineering National Sun Yat-sen University Power Bus Noise below 5MHz 1 Power Bus Noise below 5MHz (Solution) Add Bulk

More information

Isolated Current Sensor with Common Mode Field Rejection

Isolated Current Sensor with Common Mode Field Rejection Fully Integrated Current Sensor IC Isolated Current Sensor with Common Mode Field Rejection Description The SENKO SC820 provides economical and precise solutions for AC or DC current sensing in industrial,

More information

Automatic Formulation of Circuit Equations

Automatic Formulation of Circuit Equations ECE 570 Session 3 IC 752-E Computer Aided Engineering for Integrated Circuits Automatic Formulation of Circuit Equations Objective: Basics of computer aided analysis/simulation Outline:. Discussion of

More information

case T C = 25 C, t P = 10 ms 32 A Non-repetitive peak forward current I F,max T C = 25 C, t P = 10 µs 120 A I 2 t value i 2 T C = 25 C, t P = 10 ms 5

case T C = 25 C, t P = 10 ms 32 A Non-repetitive peak forward current I F,max T C = 25 C, t P = 10 µs 120 A I 2 t value i 2 T C = 25 C, t P = 10 ms 5 Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive

More information

ID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom

ID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom ID # NAME EE-255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.

More information

Integrating Circuit Simulation with EIT FEM Models

Integrating Circuit Simulation with EIT FEM Models Integrating Circuit Simulation with EIT FEM Models Alistair Boyle and Andy Adler University of Ottawa Carleton University Ottawa, Canada EIT2018, June 11 13, 2018 Circuits and FEM + Step 1: forward solution

More information