Magnetic Sensor (3B) Magnetism Hall Effect AMR Effect GMR Effect. Young Won Lim 9/23/09
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1 Magnetic Sensor (3B) Magnetism Hall Effect AMR Effect GMR Effect
2 Copyright (c) 2009 Young W. Lim. Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation License, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts. A copy of the license is included in the section entitled "GNU Free Documentation License". Please send corrections (or suggestions) to youngwlim@hotmail.com. This document was produced by using OpenOffice and Octave.
3 Magnetism Ferro-magnetic material Permanent magnet Ferri-magnetic material Below Curie Temp: like ferromagnets Above Curie Temp: like paramagnets Para-magnetic material DC Josephson: I > I c then in the resistiv Optical Sensor 3
4 Hall Effect (1) Transient State I x v x F m Lorentz Force to charges E x Applied external magnetic field charges deflect charges are accumulated F ' m Lorentz Force to charges I x As E H increases, new (+) and ( ) charges are repelled by those previously accumulated charges. (balancing effect) electrical potential (E H ) are created Optical Sensor 4
5 Hall Effect (2) The force Fe counteracts Fm. Steady State F e : due to E H I x F m : due to external magnetic field Again charges travels straight, but with the Hall angle θ. E x E t E H E H v x F m Lorentz Force to charges F e F m : Lorentz Force Optical Sensor 5
6 Hall Effect (3) Transient State Steady State I x v x F m Lorentz Force to charges I x E x E t E x E H E H I x F ' m Lorentz Force to charges F e F m : Lorentz Force Optical Sensor 6
7 Hall Effect Geometric Factor (1) f H = function l w, l 1 w 1 l 2 w 2 l 3 w E H1 E H2 E H3 l 1 l 2 l 3 w 1 w 2 w 3 Optical Sensor 7
8 Hall Effect Geometric Factor (2) F e F m : Lorentz Force w l The force Fe counteracts Fm. F e : due to E H F m : due to external magnetic field More charges are accumulated at the both ends until they repel other new charges. w Optical Sensor 8
9 Physical Magneto-resistance Effect Ideal Case Real Case Semiconductor Different Lorentz Force to each charge Different charges travel different paths The total length of paths is increased The resistance increases slightly Optical Sensor 9
10 Geometrical Magneto-resistance Effect (1) Ideal Case Real Cases Metal Electrode Contact Optical Sensor 10
11 Geometrical Magneto-resistance Effect (2) Min R 1 : Max R 1 ratio R R o = max R 1 min R 1 Min R 2 : Max R 2 ratio R R o = max R 2 min R 2 Optical Sensor 11
12 Magnetic Anisotropy (1) Magneto-crystalline Anisotropy An intrinsic property of a ferri-magnet Magnetization curve along different crystal directions Easy direction Hard direction Intermediate direction Optical Sensor 12
13 Magnetic Anisotropy (2) Easy direction Magnetization Permalloy Resistor : NiFe (ferri-magnet) Optical Sensor 13
14 Permalloy Resistor (1) R max : small current Easy direction : parallel current direction R min : large current : perpendicular current direction Optical Sensor 14
15 Permalloy Resistor (2) Easy direction Fix the direction of current External Magnetic Field changes the magnetization direction of permalloy the resistance the current 45 θ H applied Optical Sensor 15
16 AMR Sensor (1) The current direction is fixed R max : small current : parallel current direction R min : large current : perpendicular current direction = 0 = 90 = 90 Optical Sensor 16
17 AMR Sensor (2) How the current direction is fixed? Shortening Bars Barber Pole Biasing : the shortest path Optical Sensor 17
18 Giant Magneto-resistance Effect Anti-parallel Magnetic Layers Parallel Magnetic Layers Current Magnetic Layer Non-magnetic Conductor Magnetic Layer Current High Interface Scattering : R max Low Interface Scattering : R min Optical Sensor 18
19 GMR Sensor Anti-parallel Magnetic Layers Parallel Magnetic Layers Current External Magnetic Field Change Current High Interface Scattering : R max Low Interface Scattering : R min Optical Sensor 19
20 References [1] [2] Nam Ki Min, Sensor Electronics, Dong-il Press [3] articles
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