Analogna elektronska vezja. Uvodna vaja

Transcription

1 Analogna elektronska vezja Uvodna vaja Povzetek Namen uvodne vaje je, da študenti spoznajo orodja, ki jih bojo uporabljali pri laboratorijskih vajah predmeta Analogna elektronska vezja in sicer: podatkovne liste, prototipne plošče, simulacijsko okolje LTspice in merilne inštrumente. Podatkovni list (angl. datasheet) Tehnične lastnosti elektronskih komponent so zbrane v podatkovnih listih. podatkovnih listih so opisane lastnosti elementa (angl. features), področja uporabe (angl. aplications), mehanski podatki (angl. mechanical data), največje dovoljene vrednosti (angl. absolute maximum ratings), toplotne lastnosti (angl. thermal characteristics), električne lastnosti (angl. electrical characteristics), ipd. nadaljevanju so prikazani izseki iz podatkovnih listov treh komponent: hitre malosignalne diode N448, tranzistorja BC546 in operacijskega ojačevalnika LM74.

2 N448 ishay Semiconductors Small Signal Fast Switching Diodes Features Silicon epitaxial planar diodes Electrically equivalent diodes: N448 - N94 Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Halogen-free according to IEC definition Applications Extreme fast switches Mechanical Data Case: DO-35 Weight: approx. 05 mg Cathode band color: black Packaging codes/options: TR/0K per 3" reel (52 mm tape), 50K/box TAP/0K per ammopack (52 mm tape), 50K/box Parts Table Part Ordering code Type marking Remarks N448 N448-TAP or N448-TR 448 Ammopack/tape and reel Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Symbol alue Unit Repetitive peak reverse voltage RRM Reverse voltage R 75 Peak forward surge current t p = µs I FSM 2 A Repetitive peak forward current I FRM 500 ma Forward continuous current I F 300 ma Average forward current R = 0 I FA 50 ma Power dissipation Thermal Characteristics T amb = 25 C, unless otherwise specified l = 4 mm, T L = 45 C P tot 440 mw l = 4 mm, T L 25 C P tot 500 mw Parameter Test condition Symbol alue Unit Thermal resistance junction to ambient air l = 4 mm, T L = constant R thja 350 K/W Junction temperature T j 75 C Storage temperature range T stg - 65 to + 50 C Document Number 8857 For technical questions within your region, please contact one of the following: Rev..3, 29-Oct-0 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

3 N448 ishay Semiconductors Electrical Characteristics T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Min. Typ. Max. Unit Forward voltage I F = 0 ma F 0 m Reverse current Typical Characteristics T amb = 25 C, unless otherwise specified R = 20 I R 25 na R = 20, T j = 50 C I R 50 µa R = 75 I R 5 µa I R = µa, t p /T = 0.0, Breakdown voltage t p = 0.3 ms (BR) Diode capacitance R = 0, f = MHz, HF = 50 m C D 4 pf Rectification efficiency HF = 2, f = MHz r 45 % Reverse recovery time I F = I R = 0 ma, i R = ma t rr 8 ns I F = 0 ma, R = 6, i R = 0. x I R, R L = t rr 4 ns.2 0 Forward oltage () - F.0 I F = ma ma ma m A I R - Reverse Current (na) 0 T j = 25 C Scattering Limit T j - Junction Temperature ( C) Figure. Forward oltage vs. Junction Temperature R - Reverse oltage () Figure 3. Reverse Current vs. Reverse oltage 0 N448 I F - Forward Current (ma) 0 Scattering Limit T J = 25 C F - Forward oltage () 2.0 Figure 2. Forward Current vs. Forward oltage 2 For technical questions within your region, please contact one of the following: Document Number 8857 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev..3, 29-Oct-0

4 Switching and Amplifier High oltage: BC546, CEO =65 Low Noise: BC549, BC550 Complement to BC BC560 BC546/547/548/549/550 BC546/547/548/549/550 NPN Epitaxial Silicon Transistor TO-92. Collector 2. Base 3. Emitter Absolute Maximum Ratings T a =25 C unless otherwise noted Symbol Parameter alue Units CBO Collector-Base oltage : BC546 : BC547/550 : BC548/549 CEO Collector-Emitter oltage : BC546 : BC547/550 : BC548/549 EBO Emitter-Base oltage : BC546/547 : BC548/549/550 I C Collector Current (DC) ma P C Collector Dissipation 500 mw T J Junction Temperature 50 C T STG Storage Temperature -65 ~ 50 C Electrical Characteristics T a =25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units I CBO Collector Cut-off Current CB =30, I E =0 5 na h FE DC Current Gain CE =5, I C =2mA CE (sat) Collector-Emitter Saturation oltage I C =0mA, I B =0.5mA I C =ma, I B =5mA BE (sat) Base-Emitter Saturation oltage I C =0mA, I B =0.5mA I C =ma, I B =5mA BE (on) Base-Emitter On oltage CE =5, I C =2mA CE =5, I C =0mA h FE Classification f T Current Gain Bandwidth Product CE =5, I C =0mA, f=mhz 300 MHz C ob Output Capacitance CB =0, I E =0, f=mhz pf C ib Input Capacitance EB =0.5, I C =0, f=mhz 9 pf NF Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 CE =5, I C =200µA f=khz, R G =2KΩ CE =5, I C =200µA R G =2KΩ, f=30~5000mhz Classification A B C h FE 0 ~ ~ ~ m m m m m m db db db db 2000 Fairchild Semiconductor International Rev. A, February 2000

5 Typical Characteristics IC[mA], COLLECTOR CURRENT IB = 400 μa 80 IB = 350 μa IB = 300 μa IB = 250 μa 60 IB = 200 μa 40 IB = 50 μa IB = μa 20 IC[mA], COLLECTOR CURRENT 0 CE = 5 BC546/547/548/549/550 IB = 50 μa CE[], COLLECTOR-EMITTER OLTAGE BE[], BASE-EMITTER OLTAGE Figure. Static Characteristic Figure 2. Transfer Characteristic hfe, DC CURRENT GAIN 0 0 CE = BE(sat), CE(sat)[m], SATURATION OLTAGE 00 0 IC = 0 IB BE(sat) CE(sat) IC[mA], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation oltage Collector-Emitter Saturation oltage Cob[pF], CAPACITANCE 0 f=mhz IE = ft, CURRENT GAIN-BANDWIDTH PRODUCT 0 0 CE = CB[], COLLECTOR-BASE OLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product 2000 Fairchild Semiconductor International Rev. A, February 2000

6 LM74 Operational Amplifier General Description The LM74 series are general purpose operational amplifiers which feature improved performance over industry standards like the LM709. They are direct, plug-in replacements for the 709C, LM20, MC439 and 748 in most applications. The amplifiers offer many features which make their application nearly foolproof: overload protection on the input and Connection Diagrams Metal Can Package output, no latch-up when the common mode range is exceeded, as well as freedom from oscillations. The LM74C is identical to the LM74/LM74A except that the LM74C has their performance guaranteed over a 0 C to +70 C temperature range, instead of 55 C to +25 C. Features Dual-In-Line or S.O. Package August 2000 LM74 Operational Amplifier Note : LM74H is available per JM3850/ Order Number LM74H, LM74H/883 (Note ), LM74AH/883 or LM74CH See NS Package Number H08C Ceramic Flatpak Order Number LM74J, LM74J/883, LM74CN See NS Package Number J08A, M08A or N08E Order Number LM74W/883 See NS Package Number W0A Typical Application Offset Nulling Circuit National Semiconductor Corporation DS

7 LM74 Absolute Maximum Ratings (Note 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. (Note 7) LM74A LM74 LM74C Supply oltage ±22 ±22 ±8 Power Dissipation (Note 3) 500 mw 500 mw 500 mw Differential Input oltage ±30 ±30 ±30 Input oltage (Note 4) ±5 ±5 ±5 Output Short Circuit Duration Continuous Continuous Continuous Operating Temperature Range 55 C to +25 C 55 C to +25 C 0 C to +70 C Storage Temperature Range 65 C to +50 C 65 C to +50 C 65 C to +50 C Junction Temperature 50 C 50 C C Soldering Information N-Package (0 seconds) 260 C 260 C 260 C J- or H-Package (0 seconds) 300 C 300 C 300 C M-Package apor Phase (60 seconds) 25 C 25 C 25 C Infrared (5 seconds) 25 C 25 C 25 C See AN-450 Surface Mounting Methods and Their Effect on Product Reliability for other methods of soldering surface mount devices. ESD Tolerance (Note 8) Electrical Characteristics (Note 5) Parameter Conditions LM74A LM74 LM74C Units Min Typ Max Min Typ Max Min Typ Max Input Offset oltage T A = 25 C R S 0 kω m R S 50Ω m T AMIN T A T AMAX R S 50Ω 4.0 m R S 0 kω m Average Input Offset 5 µ/ C oltage Drift Input Offset oltage T A = 25 C, S = ±20 ±0 ±5 ±5 m Adjustment Range Input Offset Current T A = 25 C na T AMIN T A T AMAX na Average Input Offset 0.5 na/ C Current Drift Input Bias Current T A = 25 C na T AMIN T A T AMAX µa Input Resistance T A = 25 C, S = ± MΩ T AMIN T A T AMAX, 0.5 MΩ S = ±20 Input oltage Range T A = 25 C ±2 ±3 T AMIN T A T AMAX ±2 ±3 2

8 Electrical Characteristics (Note 5) (Continued) Parameter Conditions LM74A LM74 LM74C Units Min Typ Max Min Typ Max Min Typ Max Large Signal oltage Gain T A = 25 C, R L 2kΩ S = ±20, O = ±5 50 /m S = ±5, O = ± /m T AMIN T A T AMAX, R L 2kΩ, S = ±20, O = ±5 32 /m S = ±5, O = ± /m S = ±5, O = ±2 0 /m Output oltage Swing S = ±20 R L 0 kω ±6 R L 2kΩ ±5 S = ±5 R L 0 kω ±2 ±4 ±2 ±4 R L 2kΩ ±0 ±3 ±0 ±3 Output Short Circuit T A = 25 C ma Current T AMIN T A T AMAX 0 40 ma Common-Mode T AMIN T A T AMAX Rejection Ratio R S 0 kω, CM = ± db R S 50Ω, CM = ± db Supply oltage Rejection T AMIN T A T AMAX, Ratio S = ±20 to S = ±5 R S 50Ω db R S 0 kω db Transient Response T A = 25 C, Unity Gain Rise Time µs Overshoot % Bandwidth (Note 6) T A = 25 C MHz Slew Rate T A = 25 C, Unity Gain /µs Supply Current T A = 25 C ma Power Consumption T A = 25 C S = ± mw S = ± mw LM74A S = ±20 T A =T AMIN 65 mw T A =T AMAX 35 mw LM74 S = ±5 T A =T AMIN 60 mw T A =T AMAX mw LM74 Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. 3

9 LM74 Electrical Characteristics (Note 5) (Continued) Note 3: For operation at elevated temperatures, these devices must be derated based on thermal resistance, and T j max. (listed under Absolute Maximum Ratings ). T j =T A +(θ ja P D ). Thermal Resistance Cerdip (J) DIP (N) HO8 (H) SO-8 (M) θ ja (Junction to Ambient) C/W C/W 70 C/W 95 C/W θ jc (Junction to Case) N/A N/A 25 C/W N/A Note 4: For supply voltages less than ±5, the absolute maximum input voltage is equal to the supply voltage. Note 5: Unless otherwise specified, these specifications apply for S = ±5, 55 C T A +25 C (LM74/LM74A). For the LM74C/LM74E, these specifications are limited to 0 C T A +70 C. Note 6: Calculated value from: BW (MHz) = 0.35/Rise Time(µs). Note 7: For military specifications see RETS74X for LM74 and RETS74AX for LM74A. Note 8: Human body model,.5 kω in series with pf. Schematic Diagram

10 2 Prototipna plošča (angl. protoboard) Elemente bomo sestavljali v vezja s pomočjo prototipnih plošč, ki se uporabljajo za enostavno spajanje elementov brez uporabe dodatnega orodja. Slika Skica povezav na prototipni plošči. 3 Simulacijsko okolje LTspice Za simulacijo elektronskih vezij bomo uporabili simulacijsko okolje LTspice, ki je na voljo na internetnem naslovu: Dodatne informacije glede LTspicea in razni primeri simulacij elektronskih vezij so dostopni na domači strani predmeta Elektronska vezja: elektronska-vezja-ev/lt-spice/ 4 Merilni inštrumenti Poleg klasičnih merilnih inštrumentov bomo na vajah uporabljali tudi računalniško krmiljeni spektralni analizator, ki je izveden z DAQ (angl. data acquisition) kartico. Ker ima DAQ kartica vhodno območje 0 0 ni zmožna meriti negativnih vrednosti. Če želimo meriti tudi izmenične signale negativnih vrednosti, moramo na njen vhod priklopiti prilagoditveno vezje (slika 2). 2

11 # 8 9, ) 3 = H J E? = , 8 8 0, / ) Slika 2 ezava DAQ kartice za merjenje izmeničnih signalov proti masi. 5 aja za ogrevanje Konstruirajte vezje, ki bo imelo naslednjo prenosno funkcijo (slika 3): A u0 = 0.25 f sp = 20 Hz f zg = 2 khz Izračunajte vrednosti elementov in preverite delovanje vezja s simulacijo v LTspiceu. ezje sestavite na prototipni plošči in izmerite njegovo prenosno karakteristiko. Rezultate vpišite v tabelo. Prenosno karakteristiko izrazite v decibelih in jo narišite v graf na sliki 4. ) K ) A B I F B C B 0 Slika 3 Prenosna funkcija. 3

12 5. Shema 5.2 Izračun 4

13 f / Hz u vh / u izh / A u A u / db Hz 0 Hz Hz khz 0 khz khz MHz Tabela Izmerjena prenosna funkcija. B 0 Slika 4 Izmerjena prenosna funkcija. 5