DISCRETE SEMICONDUCTORS DATA SHEET. BLT92/SL UHF power transistor

Size: px
Start display at page:

Download "DISCRETE SEMICONDUCTORS DATA SHEET. BLT92/SL UHF power transistor"

Transcription

1 DISCRETE SEMICONDUCTORS DATA SHEET May 1989

2 DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 9 MHz communications band. This device has been designed specifically for class-b operation. QUICK REFERENCE DATA RF performance at T mb =5 C in a common-emitter class-b circuit MODE OF OPERATION PIN CONFIGURATION V CE (V) f (MHz) P L (W) (db) η C (%) CW (class-b) > 7. > 5 FEATURES internal input matching capacitor for a high power gain gold metallization ensures excellent reliability The transistor has a -lead studless envelope with a ceramic cap (SOT1D). All leads are isolated from the mounting base. 1 3 PINNING 1 = collector = emitter 3 = base = emitter Fig.1 Simplified outline, SOT1D. MSB55 PRODUCT SAFETY This device incorporates beryllium oxide (BeO), the dust of which is toxic. The device is entirely safe provided that the internal BeO disc is not damaged. May 1989

3 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 13) Collector-base voltage (open emitter) V CBO max. V Collector-emitter voltage (open base) V CEO max. 1 V Emitter-base voltage (open collector) V EBO max. 3. V Collector current DC or average I C ; I C(AV) max. 1. A (peak value); f > 8 MHz I CM max. 3.6 A Total power dissipation at T amb < 1 C; f > 8 MHz P tot max. 1 W Storage temperature range T stg 65 to +15 C Operating junction temperature T j max. C THERMAL RESISTANCE Dissipation = 1 W; T mb =5 C From junction to mounting base (f > 8 MHz) R th j-mb(rf) max. 6. K/W P tot (W) 16 (1) MDA () T mb ( C) (1) Short-time RF operation during mismatch (f > 8 MHz). () Continuous RF operation (f > 8 MHz). Fig. Total power dissipation as a function of temperature. May

4 CHARACTERISTICS T j =5 C unless otherwise specified Collector-base breakdown voltage open emitter; I C = 1 ma V (BR)CBO > V Collector-emitter breakdown voltage open base; I C = ma V (BR)CEO > 1 V Emitter-base breakdown voltage open collector; I E = ma V (BR)EBO > 3. V Collector cut-off current V BE = ; V CE = 1 V I CES < 5. ma Second breakdown energy L = 5 mh; f = 5 Hz; R BE =1Ω E SBR > 1. mj DC current gain I C = 6 ma; V CE = 5 V h FE > 5 Collector capacitance at f = 1 MHz I E =i e = ; V CB = 7.5 V C c typ. 11 pf Feedback capacitance at f = 1 MHz I C = ; V CE = 7.5 V C re typ. 6. pf Collector-mounting base capacitance C c-mb typ. 1. pf MDA98 C c (pf) V CB (V) Fig.3 Collector capacitance as a function of collector-base voltage; f = 1 MHz; I E =i e = ; typical values. May 1989

5 APPLICATION INFORMATION RF performance in CW operation (common-emitter circuit; class-b); f = 9 MHz; T mb =5 C MODE OF OPERATION V CE (V) P L (W) (db) η C (%) Class-B; CW > typ > typ handbook, full pagewidth 5 Ω L1 C L C5 D.U.T.,,,,, L L5 C6 C9 L3 L6 C11 5 Ω C1 C C3 C7 C8 C1 L7 L8 L1 R1 L9 C1 R C13 +V CC C1 MDA99 Fig. Class-B test circuit at f = 9 MHz. List of components: C1 = C = C8 = C1 = 1. to 5.5 pf film dielectric trimmer (cat. no ) C3 = C6 = C7 = 3.3 pf multilayer ceramic chip capacitor (1) C = C5 = C9 = 5.6 pf multilayer ceramic chip capacitor (1) C11 = C1 = C13 = 18 pf multilayer ceramic chip capacitor C1 = 1 µf (35 V) tantalum capacitor L1 = 5 Ω stripline (5 mm. mm) L = 5 Ω stripline (11 mm. mm) L3 = L=5Ωstripline (11.5 mm 6. mm) L5 = 5 Ω stripline (7. mm. mm) L6 = 5 Ω stripline (7. mm. mm) L7 = turns closely wound enamelled Cu wire (. mm), int. dia;. 3 mm, with ferrite beat (cat. no ) over the coldside lead L8 = 1 turn Cu wire (1. mm); int. dia. 5.5 mm; length mm; leads 5 mm L9 = L1 = Ferroxcube wideband HF choke, grade 3B (cat. no ) R1 = R = 1 Ω±5%;.5 W metal film resistor The striplines on a double Cu-clad printed circuit board with PTFE fibreglass dielectric (ε r =.); thickness 1/3 inch; thickness of copper-sheet 35 µm. Note 1. American Technical Ceramics capacitor type 1 A or capacitor of same quality. May

6 handbook, full pagewidth 135 mm 7 mm +V CC L5 L8 C8 R1 C6 R C7 C1 L1 C C L L L3 L7 L6 C1 C11 L9 L1 C13 C1 C3 C5 C9 C1 MDA3 Fig.5 Printed circuit board and component layout for 9 MHz class-b test circuit. Note: The circuit and the components are on one side of the PTFE fibreglass board; the other side is un-etched copper serving as groundplane. Earth connections are made by hollow rivets and also by fixing-screws and copper straps around the board and under the emitters to provide a direct contact between the copper on the component side and the groundplane. May

7 5 P L (W) MDA31 1 (db) 8 MDA3 1 η C (%) η C η C P S (W) P L (W) f = 9 MHz; T mb =5 C; class-b operation; typical values. V CE = 7.5 V V CE = 5. V f = 9 MHz; T mb =5 C; class-b operation; typical values. V CE = 7.5 V V CE = 5. V Fig.6 Load power as a function of source power. Fig.7 Power gain and efficiency as a function of load power. RUGGEDNESS The device is capable of withstanding a full load mismatch (VSWR = 5; all phases) at rated load power up to a supply voltage of 9. V at T mb =5 C. May

8 1 Z i (Ω) 8 x i MDA33 5 Z L (Ω) R L MDA3 6 r i 3 X L f (MHz) V CE = 7,5 V; P L = 3 W; f = 8-96 MHz; T mb =5 C; class-b operation; typical values f (MHz) V CE = 7,5 V; P L = 3 W; f = 8-96 MHz; T mb =5 C; class-b operation; typical values. Fig.8 Input impedance as a function of frequency (series components). Fig.9 Load impedance as a function of frequency (series components). 1 (db) 8 MDA f (MHz) V CE = 7,5 V; P L = 3 W; f = 8-96 MHz; T mb =5 C; class-b operation; typical values. Fig.1 Power gain as a function of frequency. May

9 PACKAGE OUTLINE Studless ceramic package; leads SOT1D D A Q D c H b L α 3 H mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D H L Q α mm OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT1D May

10 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 13). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May

DISCRETE SEMICONDUCTORS DATA SHEET. BLU99 BLU99/SL UHF power transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLU99 BLU99/SL UHF power transistor DISCRETE SEMICONDUCTORS DATA SHEET /SL March 1993 /SL DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is

More information

FEATURES PIN CONFIGURATION Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. h

FEATURES PIN CONFIGURATION Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. h E-MAIL: DISCRETE SEMICONDUCTORS DATA SHEET September 1991 E-MAIL: FEATURES PIN CONFIGURATION Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability.

More information

FEATURES Internal matching for an optimum wideband capability and high gain Emitter-ballasting resistors for optimum temperature profile Gold

FEATURES Internal matching for an optimum wideband capability and high gain Emitter-ballasting resistors for optimum temperature profile Gold E-MAIL: DISCRETE SEMICONDUCTORS DATA SHEET March 1993 E-MAIL: FEATURES Internal matching for an optimum wideband capability and high gain Emitter-ballasting resistors for optimum temperature profile Gold

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLU86 UHF power transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLU86 UHF power transistor DISCRETE SEMICONDUCTORS DATA SHEET September 1991 FEATURES SMD encapsulation Emitter-ballasting resistors for optimum temperature profile Gold metallization ensures excellent reliability. DESCRIPTION NPN

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLW90 UHF power transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLW90 UHF power transistor DISCRETE SEMICONDUCTORS DATA SHEET August 1986 DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-a, B or C in the u.h.f. and v.h.f. range for a nominal

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLW80 UHF power transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLW80 UHF power transistor DISCRETE SEMICONDUCTORS DATA SHEET BLW8 March 1993 BLW8 DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-a, B or C in the u.h.f. and v.h.f. range for

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLY87C VHF power transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLY87C VHF power transistor DISCRETE SEMICONDUCTORS DATA SHEET August 1986 DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-a, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLW33 UHF linear power transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLW33 UHF linear power transistor DISCRETE SEMICONDUCTORS DATA SHEET August 1986 DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers.

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLW96 HF/VHF power transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLW96 HF/VHF power transistor DISCRETE SEMICONDUCTORS DATA SHEET August 1986 DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-a, AB and B operated high power industrial and military transmitting equipment

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLF521 UHF power MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLF521 UHF power MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET November 1992 FEATURES PIN CONFIGURATION High power gain Easy power control ook, halfpage 1 Gold metallization Good thermal stability Withstands full load mismatch Designed

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLF543 UHF power MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLF543 UHF power MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET October 1992 FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability Designed for broadband operation. DESCRIPTION

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLF245 VHF power MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLF245 VHF power MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET September 1992 FEATURES High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLF145 HF power MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLF145 HF power MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET September 1992 FEATURES High power gain Low noise figure Good thermal stability Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement mode vertical

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLF246 VHF power MOS transistor Oct 21. Product specification Supersedes data of September 1992

DISCRETE SEMICONDUCTORS DATA SHEET. BLF246 VHF power MOS transistor Oct 21. Product specification Supersedes data of September 1992 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of September 1992 1996 Oct 21 FEATURES High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch. PINNING

More information

DATA SHEET. BFG31 PNP 5 GHz wideband transistor DISCRETE SEMICONDUCTORS Sep 12

DATA SHEET. BFG31 PNP 5 GHz wideband transistor DISCRETE SEMICONDUCTORS Sep 12 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November 199 File under Discrete Semiconductors, SC14 1995 Sep 1 FEATURES High output voltage capability High gain bandwidth product Good thermal stability

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BFR106 NPN 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DISCRETE SEMICONDUCTORS DATA SHEET. BFR106 NPN 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14 DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION PINNING NPN silicon planar epitaxial transistor in a plastic SOT3 envelope. It is primarily intended

More information

DATA SHEET. BFQ225 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04

DATA SHEET. BFQ225 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1996 July 18 File under Discrete Semiconductors, SC5 1996 Sep 4 APPLICATIONS Primarily intended for cascode output and buffer stages in high resolution

More information

DATA SHEET. BGY116D; BGY116E UHF amplifier modules DISCRETE SEMICONDUCTORS May 08

DATA SHEET. BGY116D; BGY116E UHF amplifier modules DISCRETE SEMICONDUCTORS May 08 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of April 199 File under Discrete Semiconductors, SC9 199 May FEATURES.5 V nominal supply voltage W output power Easy control of output power by DC voltage.

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ19 NPN 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ19 NPN 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14 DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film

More information

DATA SHEET. BFQ226 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04

DATA SHEET. BFQ226 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1996 July 18 File under Discrete Semiconductors, SC5 1996 Sep 4 APPLICATIONS Primarily intended for cascode output and buffer stages in high resolution

More information

DATA SHEET. BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules DISCRETE SEMICONDUCTORS May 13

DATA SHEET. BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules DISCRETE SEMICONDUCTORS May 13 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of May 994 File under Discrete Semiconductors, SC9 996 May 3 FEATURES 6 V nominal supply voltage996 May 3. W output power (BGY5A, BGY5B and BGY5D).4 W

More information

UHF power MOS transistor IMPORTANT NOTICE. use

UHF power MOS transistor IMPORTANT NOTICE.   use Rev. 6 1 September 215 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 215 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon,

More information

DISCRETE SEMICONDUCTORS DATA SHEET M3D065. BLF244 VHF power MOS transistor. Product specification Supersedes data of 1997 Dec 17.

DISCRETE SEMICONDUCTORS DATA SHEET M3D065. BLF244 VHF power MOS transistor. Product specification Supersedes data of 1997 Dec 17. DISCRETE SEMICONDUCTORS DATA SHEET M3D65 Supersedes data of 1997 Dec 17 23 Oct 13 FEATURES PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability Withstands full load

More information

DISCRETE SEMICONDUCTORS DATA SHEET M3D065. BLF242 HF-VHF power MOS transistor. Product specification Supersedes data of 1997 Dec 17.

DISCRETE SEMICONDUCTORS DATA SHEET M3D065. BLF242 HF-VHF power MOS transistor. Product specification Supersedes data of 1997 Dec 17. DISCRETE SEMICONDUCTORS DATA SHEET M3D65 Supersedes data of 1997 Dec 17 23 Oct 13 FEATURES PIN CONFIGURATION High power gain Low noise Easy power control Good thermal stability 1 4 Withstands full load

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ67W NPN 8 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ67W NPN 8 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14 DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC4 September 99 FEATURES PINNING High power gain Low noise figure High transition frequency Gold metallization ensures excellent

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ149 PNP 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ149 PNP 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14 DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION PINNING PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband

More information

Island Labs. UHF push-pull power MOS transistor. Island Labs PIN CONFIGURATION

Island Labs. UHF push-pull power MOS transistor. Island Labs PIN CONFIGURATION Philips Semiconductors FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability Designed for broadband operation. DESCRIPTION Dual push-pull silicon

More information

IMPORTANT NOTICE. use

IMPORTANT NOTICE.   use Rev. 4 1 September 215 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 215 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon,

More information

DISCRETE SEMICONDUCTORS DATA SHEET M3D175. BLF202 HF/VHF power MOS transistor. Product specification Supersedes data of 1999 Oct 20.

DISCRETE SEMICONDUCTORS DATA SHEET M3D175. BLF202 HF/VHF power MOS transistor. Product specification Supersedes data of 1999 Oct 20. DISCRETE SEMICONDUCTORS DATA SHEET M3D175 Supersedes data of 1999 Oct 2 23 Sep 19 FEATURES High power gain Easy power control Gold metallization Good thermal stability Withstands full load mismatch. PINNING

More information

DATA SHEET. BLF246B VHF push-pull power MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct 10.

DATA SHEET. BLF246B VHF push-pull power MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct 10. DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D75 VHF push-pull power MOS transistor Supersedes data of 21 Oct 1 23 Aug 4 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal

More information

DISCRETE SEMICONDUCTORS DATA SHEET M3D091. BLF548 UHF push-pull power MOS transistor. Product specification Supersedes data of Oct 1992.

DISCRETE SEMICONDUCTORS DATA SHEET M3D091. BLF548 UHF push-pull power MOS transistor. Product specification Supersedes data of Oct 1992. DISCRETE SEMICONDUCTORS DATA SHEET M3D91 UHF push-pull power MOS transistor Supersedes data of Oct 1992 23 Sep 26 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold

More information

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BFG541 NPN 9 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DISCRETE SEMICONDUCTORS DATA SHEET. BFG541 NPN 9 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14 DISCRETE SEMICONDUCTORS DATA SHEET BFG4 File under Discrete Semiconductors, SC4 September 99 BFG4 FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent

More information

DISCRETE SEMICONDUCTORS DATA SHEET M3D076. BLF542 UHF power MOS transistor. Product specification Supersedes data of 1998 Jan 08.

DISCRETE SEMICONDUCTORS DATA SHEET M3D076. BLF542 UHF power MOS transistor. Product specification Supersedes data of 1998 Jan 08. DISCRETE SEMICONDUCTORS DATA SHEET M3D76 Supersedes data of 1998 Jan 8 23 Sep 18 FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability Withstands

More information

DISCRETE SEMICONDUCTORS DATA SHEET M3D065. BLF245 VHF power MOS transistor. Product specification Supersedes data of 1997 Dec 17.

DISCRETE SEMICONDUCTORS DATA SHEET M3D065. BLF245 VHF power MOS transistor. Product specification Supersedes data of 1997 Dec 17. DISCRETE SEMICONDUCTORS DATA SHEET M3D65 Supersedes data of 1997 Dec 17 23 Sep 2 FEATURES High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch. DESCRIPTION

More information

PNP power transistor

PNP power transistor FEATURES High current (max. 3 A) Low voltage (max. 45 V). APPLICATIONS General purpose power applications. PINNING PIN DESCRIPTION 1 emitter 2 collector, connected to metal part of mounting surface 3 base

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BFS17 NPN 1 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DISCRETE SEMICONDUCTORS DATA SHEET. BFS17 NPN 1 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14 DISCRETE SEMICONDUCTORS DT SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION NPN transistor in a plastic SOT23 package. PPLICTIONS wide range of RF applications such as: Mixers

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BFS520 NPN 9 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DISCRETE SEMICONDUCTORS DATA SHEET. BFS520 NPN 9 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14 DISCRETE SEMICONDUCTORS DATA SHEET BFS File under Discrete Semiconductors, SC4 September 99 BFS FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent

More information

DISCRETE SEMICONDUCTORS DATA SHEET M3D060. BLF177 HF/VHF power MOS transistor. Product specification Supersedes data of 2003 Jul 21.

DISCRETE SEMICONDUCTORS DATA SHEET M3D060. BLF177 HF/VHF power MOS transistor. Product specification Supersedes data of 2003 Jul 21. DISCRETE SEMICONDUCTORS DATA SHEET M3D6 Supersedes data of 23 Jul 21 24 Dec 17 FEATURES High power gain Low intermodulation distortion Easy power control Good thermal stability Withstands full load mismatch.

More information

UHF power MOS transistor IMPORTANT NOTICE. use

UHF power MOS transistor IMPORTANT NOTICE.   use Rev. 5 1 September 215 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 215 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon,

More information

DATA SHEET. BLF248 VHF push-pull power MOS transistor DISCRETE SEMICONDUCTORS Sep 02. Product specification Supersedes data of 1997 Dec 17

DATA SHEET. BLF248 VHF push-pull power MOS transistor DISCRETE SEMICONDUCTORS Sep 02. Product specification Supersedes data of 1997 Dec 17 DISCRETE SEMICONDUCTORS DATA SHEET M3D91 VHF push-pull power MOS transistor Supersedes data of 1997 Dec 17 23 Sep 2 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability

More information

IMPORTANT NOTICE. use

IMPORTANT NOTICE.   use Rev. 4 5 January 27 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets

More information

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27.

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27. DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1999 Apr 27 2004 Jan 21 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS General amplification

More information

IMPORTANT NOTICE. use

IMPORTANT NOTICE.   use Rev. 6 5 December 26 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets

More information

DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.

DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D86 Supersedes data of 2003 Dec 0 2004 Nov 05 FEATURES High current. APPLICATIONS Linear voltage regulators Low side switch Supply line switch for negative

More information

DATA SHEET. PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

DATA SHEET. PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 File under Discrete Semiconductors, SC7 996 Sep FEATURES Low noise Interchangeability of drain

More information

DATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20.

DATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 23 Nov 2 24 Nov 5 FEATURES High current Two current gain selections. APPLICATIONS Linear voltage regulators High side switches

More information

DATA SHEET. BCP69 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Nov 15.

DATA SHEET. BCP69 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Nov 15. DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 Supersedes data of 2002 Nov 15 2003 Nov 25 FEATURES High current Three current gain selections 1.4 W total power dissipation. APPLICATIONS Linear

More information

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN

More information

CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. Rev. 01 11 December 2008 Objective data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.

More information

DATA SHEET. PMBFJ174 to 177 P-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

DATA SHEET. PMBFJ174 to 177 P-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DT SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors File under Discrete Semiconductors, SC07 pril 1995 DESCRIPTION Silicon symmetrical p-channel junction FETs in

More information

DATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04

DATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 22 Feb 4 24 Feb 6 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN 1

More information

DATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14.

DATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14. DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 PBSS4540Z 40 V low V CEsat NPN transistor Supersedes data of 2001 Jul 24 2001 Nov 14 FEATURES Low collector-emitter saturation voltage High current capabilities

More information

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 1999 Apr 12 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.

More information

DATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS

DATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω Supersedes data of 2004 Jun 02 2004 Jun 24 FEATURES Built-in bias resistors

More information

DATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13.

DATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13. DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PBSS5350D 50 V low V CEsat PNP transistor Supersedes data of 2001 Jul 13 2001 Nov 13 FEATURES Low collector-emitter saturation voltage High current capability

More information

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability

More information

DATA SHEET. BYG70 series Fast soft-recovery controlled avalanche rectifiers DISCRETE SEMICONDUCTORS Jun 05

DATA SHEET. BYG70 series Fast soft-recovery controlled avalanche rectifiers DISCRETE SEMICONDUCTORS Jun 05 DISCRETE SEMICONDUCTORS DATA SHEET, halfpage M3D168 BYG7 series File under Discrete Semiconductors, SC1 1996 Jun 5 BYG7 series FEATURES Glass passivated High maximum operating temperature Low leakage current

More information

DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11.

DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 27 2004 Oct 11 FEATURES Low current (max. 200 ma) Low voltage (max. 15 V). APPLICATIONS High-speed switching. PINNING

More information

DATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23

DATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D12 Supersedes data of 1999 Apr 23 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.

More information

DATA SHEET. BF908WR N-channel dual-gate MOS-FET. Philips Semiconductors DISCRETE SEMICONDUCTORS Apr 25

DATA SHEET. BF908WR N-channel dual-gate MOS-FET. Philips Semiconductors DISCRETE SEMICONDUCTORS Apr 25 DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC7 1995 Apr 25 Philips Semiconductors FEATURES High forward transfer admittance Short channel transistor with high forward transfer

More information

DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 File under Discrete Semiconductors, SC7 996 Jul FEATURES Interchangeability of drain and source

More information

DATA SHEET. BYV2100 Fast soft-recovery controlled avalanche rectifier DISCRETE SEMICONDUCTORS. Product specification 1996 Oct 07. handbook, 2 columns

DATA SHEET. BYV2100 Fast soft-recovery controlled avalanche rectifier DISCRETE SEMICONDUCTORS. Product specification 1996 Oct 07. handbook, 2 columns DISCRETE SEMICONDUCTORS DATA SHEET handbook, columns M3D6 BYV 996 Oct 7 BYV FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy

More information

DATA SHEET. PBSS4250X 50 V, 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 17

DATA SHEET. PBSS4250X 50 V, 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 17 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D9 Supersedes data of 2003 Jun 17 2004 Nov 08 FEATURES SOT89 (SC-62) package Low collector-emitter saturation voltage V CEsat High collector current

More information

DATA SHEET. 1N4001G to 1N4007G Rectifiers DISCRETE SEMICONDUCTORS May 24. Product specification Supersedes data of April 1992

DATA SHEET. 1N4001G to 1N4007G Rectifiers DISCRETE SEMICONDUCTORS May 24. Product specification Supersedes data of April 1992 DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D6 Supersedes data of April 992 996 May 24 FEATURES Glass passivated High imum operating temperature Low leakage current Excellent stability Available

More information

DATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5

DATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5 DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D09 Supersedes data of 2004 Aug 5 2004 Oct 25 FEATURES High h FE and low V CEsat at high current operation High collector current capability: I C maximum

More information

DATA SHEET. BAV100 to BAV103 General purpose diodes DISCRETE SEMICONDUCTORS Sep 17. Product specification Supersedes data of April 1996

DATA SHEET. BAV100 to BAV103 General purpose diodes DISCRETE SEMICONDUCTORS Sep 17. Product specification Supersedes data of April 1996 DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 Supersedes data of April 1996 1996 Sep 17 FEATURES Small hermetically sealed glass SMD package Switching speed: max. 50 ns General application

More information

Silicon Diffused Darlington Power Transistor

Silicon Diffused Darlington Power Transistor GENERAL DESCRIPTION Highvoltage, monolithic npn power Darlington transistor in a SOT93 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc. QUICK REFERENCE

More information

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)

More information

DATA SHEET. BSD22 MOSFET N-channel depletion switching transistor DISCRETE SEMICONDUCTORS

DATA SHEET. BSD22 MOSFET N-channel depletion switching transistor DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DT SHEET MOSFET N-channel depletion switching transistor File under Discrete Semiconductors, SC07 December 1997 DESCRIPTION Marking code: M32 Symmetrical insulated-gate silicon

More information

DATA SHEET. BAT54W series Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS Mar 19. Product specification Supersedes data of October 1993

DATA SHEET. BAT54W series Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS Mar 19. Product specification Supersedes data of October 1993 DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MD088 Supersedes data of October 199 1996 Mar 19 FEATURES Low forward voltage Guard ring protected Very small SMD package. APPLICATIONS Ultra high-speed

More information

DATA SHEET. BYD63 Ripple blocking diode DISCRETE SEMICONDUCTORS Jun 10

DATA SHEET. BYD63 Ripple blocking diode DISCRETE SEMICONDUCTORS Jun 10 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D9 Supersedes data of November 995 File under Discrete Semiconductors, SC 996 Jun FEATURES Glass passivated High maximum operating temperature Low leakage

More information

DATA SHEET. BYG90-40 series Schottky barrier rectifier diodes DISCRETE SEMICONDUCTORS May 06

DATA SHEET. BYG90-40 series Schottky barrier rectifier diodes DISCRETE SEMICONDUCTORS May 06 DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D113 File under Discrete Semiconductors, SC01 1996 May 06 FEATURES Low switching losses Capability of absorbing very high surge current Fast recovery

More information

Insulated Gate Bipolar Transistor (IGBT)

Insulated Gate Bipolar Transistor (IGBT) BUK856-8A GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated SYMBOL PARAMETER MAX. UNIT gate bipolar power transistor in a plastic envelope. V CE Collector-emitter voltage 8 V

More information

DATA SHEET. BYD77 series Ultra fast low-loss controlled avalanche rectifiers DISCRETE SEMICONDUCTORS May 24

DATA SHEET. BYD77 series Ultra fast low-loss controlled avalanche rectifiers DISCRETE SEMICONDUCTORS May 24 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D Supersedes data of December 99 File under Discrete Semiconductors, SC 996 May 4 FEATURES Glass passivated High maximum operating temperature Low leakage

More information

DATA SHEET. BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors DISCRETE SEMICONDUCTORS

DATA SHEET. BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 FEATURES Interchangeability of drain and source connections High I DSS range Frequency

More information

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT99 envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE

More information

DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10

DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10 DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 NPN transistor/schottky-diode module 2003 Nov 0 FEATURES 600 mw total power dissipation High current capability Reduces required PCB area Reduced

More information

DATA SHEET. TDA3601Q TDA3601AQ Multiple output voltage regulators INTEGRATED CIRCUITS Dec 13

DATA SHEET. TDA3601Q TDA3601AQ Multiple output voltage regulators INTEGRATED CIRCUITS Dec 13 INTEGRATED CIRCUITS DATA SHEET Supersedes data of September 1994 File under Integrated Circuits, IC01 1995 Dec 13 FEATURES Six fixed voltage regulators Three microprocessor-controlled regulators Two V

More information

DISCRETE SEMICONDUCTORS DATA SHEET. PMMT591A PNP BISS transistor. Product specification Supersedes data of 2001 Jun 11.

DISCRETE SEMICONDUCTORS DATA SHEET. PMMT591A PNP BISS transistor. Product specification Supersedes data of 2001 Jun 11. DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 2001 Jun 11 2004 Jan 13 FETURES High current (max. 1 ) Low collector-emitter saturation voltage ensures reduced power consumption. PPLICTIONS Battery

More information

DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.

DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN transistor/schottky diode module Supersedes data of 2002 Oct 28 2003 Jul 04 FEATURES 600 mw total power dissipation High current capability

More information

DATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09.

DATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN/PNP general purpose transistor Supersedes data of 2002 Aug 09 2002 Nov 22 FEATURES High current (500 ma) 600 mw total power dissipation Replaces

More information

DATA SHEET. BYD11 series Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS Sep 26

DATA SHEET. BYD11 series Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS Sep 26 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D Supersedes data of April 996 File under Discrete Semiconductors, SC 996 Sep 6 FEATURES Glass passivated High maximum operating temperature Low leakage

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT FEATURES Six fixed voltage regulators Three microprocessor-controlled regulators Two V P -state controlled regulators One fixed voltage regulator (can operate during load dump or thermal shutdown) V P1

More information

DATA SHEET. BYD31 series Fast soft-recovery controlled avalanche rectifiers DISCRETE SEMICONDUCTORS Sep 18

DATA SHEET. BYD31 series Fast soft-recovery controlled avalanche rectifiers DISCRETE SEMICONDUCTORS Sep 18 DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D Supersedes data of 996 Jun 5 File under Discrete Semiconductors, SC 996 Sep 8 FEATURES Glass passivated High maximum operating temperature Low leakage

More information

DATA SHEET. PRF957 UHF wideband transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Mar 01.

DATA SHEET. PRF957 UHF wideband transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Mar 01. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D1 Supersedes data of 1999 Mar 1 1999 Jul 3 FEATURES PINNING Small size Low noise Low distortion High gain Gold metallization ensures excellent reliability.

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

Parameter Test condition Symbol Value Unit Junction ambient 1) R thja 300 K/W

Parameter Test condition Symbol Value Unit Junction ambient 1) R thja 300 K/W Silicon NPN Planar RF Transistor Features High power gain Low noise figure Lead (Pb)-free component Component in accordance to RoHS 00/95/EC and WEEE 00/96/EC e E B C Applications RF amplifier up to GHz

More information

DATA SHEET. BSP304; BSP304A P-channel enhancement mode vertical D-MOS transistors. Philips Semiconductors DISCRETE SEMICONDUCTORS.

DATA SHEET. BSP304; BSP304A P-channel enhancement mode vertical D-MOS transistors. Philips Semiconductors DISCRETE SEMICONDUCTORS. DISCREE SEMICONDUCORS DAA SHEE BSP34; BSP34A File under Discrete Semiconductors, SC7 995 Apr 7 Philips Semiconductors BSP34; BSP34A FEAURES Direct interface to C-MOS, L etc. High speed switching No secondary

More information

DATA SHEET. BSS192 P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 20

DATA SHEET. BSS192 P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 20 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D19 Supersedes data of 1997 Jun 2 22 May 22 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS Line

More information

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Rev. 0 26 September 2006 Product data sheet. Product profile. General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package..2

More information

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device

More information

COMPLEMENTARY NPN/PNP TRANSISTOR

COMPLEMENTARY NPN/PNP TRANSISTOR SEMICONDUCTOR DATA SHEET COMPLEMENTARY NPN/PNP TRANSISTOR FEATURES Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching

More information

P-channel enhancement mode MOS transistor

P-channel enhancement mode MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage s V DS = 2 V Fast switching Logic level compatible I D =.2 A Subminiature surface mount g package R DS(ON). Ω (V GS =. V) GENERAL DESCRIPTION

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

DATA SHEET. BSN304 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 17

DATA SHEET. BSN304 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 17 DISCRETE SEMICONDUCTORS DATA SHEET age M3D6 Supersedes data of 997 Jun 7 2 Dec FEATURES PINNING - TO-92 variant Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS

More information