TEMPLATE AFFINITY ROLE IN CONTACT SHRINK BY DSA PLANARIZATION
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1 TEMPLATE AFFINITY ROLE IN CONTACT SHRINK BY DSA PLANARIZATION A. Gharbi, R. Tiron, M. Argoud, P. Pimenta Barros, S. Bos, G. Chamiotmaitral, I. Servin, A. Fouquet, J. Hazart (CEA-LETI) X. Chevalier, C. Navarro, C. Nicolet (ARKEMA) S. Bouanani, C. Lapeyre (STMicroelectronics) 1ST DSA SYMPOSIUM OCTOBER
2 OUTLINE Introduction DSA planarization approach BCP molecular weight commensurability Pre-pattern affinity control Conclusion 2
3 OUTLINE Introduction DSA planarization approach BCP molecular weight commensurability Pre-pattern affinity control Conclusion 3
4 INTRODUCTION - Molecular weight - Composition - CDU Material DSA performances Placement error Pre-pattern - Pre-pattern CD - Density - cavity height Process - Affinity control - Annealing conditions - Defectivity 4
5 DSA CD UNIFORMITY (CDU) Spec. ±8% In-spec. out-of-spec. (nm) DSA CDU mapping Guiding pattern DSA pattern Mean CD CDU (3σ) CD DSA = 24.7nm CD DSA = 22.4nm DSA CD in-spec DSA CD out-spec DSA CD/CDU measured from top-down SEM images 5
6 Placement error Y (nm) PLACEMENT ERROR (PE) Guiding contact DSA contact CH shrink ΔY Δ X CH doubling PE- Y PE- X PE = DSA contact to pre-pattern centers distance PE = Placement dispersion to mean position contacts Mean position Mean ±3σ y ±3σ x Placement error X (nm) Mean (nm) σ (nm) Mean (nm) 3σ (nm) PE-X PE-Y Pitch PE-X -1E PE-Y -9E
7 DEFECTIVITY: HOLE OPEN YIELD (HOY) CH shrink CH doubling HOY = 100% HOY < 100% Defect = missing contact HOY based on statistical measurements over the wafer (~6000 contacts) 7
8 INTRODUCTION: MATERIALS & TOOLS Materials Tools BCPs and neutral layers from PS-b-PMMA cylindrical morphology L 0 = 23nm to 50nm SOKUDO DUO track for self-assembly process Dry etching tools for planarization and DSA transfer CD-SEM, AFM, ellipsometry for characterizations Fully integrated 300mm DSA pilot line at Leti Guiding pattern DSA pattern DSA transfer Brush and BCP auto-coating High temp. hot plates In-line PMMA removal And other DSA R&D modules CD guiding = 55 nm CD DSA = 20 nm M.Argoud et al. Proc of SPIE
9 OUTLINE Introduction DSA planarization approach BCP molecular weight commensurability Pre-pattern affinity control Conclusion 9
10 Litho DSA process flow (contact/via graphoepitaxy) Guiding pattern (193i litho) Guiding pattern (SOC/SiARC etching) Surface preparation BCP coating Self-assembly annealing PMMA removal 10
11 DSA INTEGRATION CHALLENGE: DENSITY DEPENDENCY COMMONLY-USED PROCESS: A SHOWSTOPPER FOR DSA INTEGRATION BCP self-assembly BCP pattern transfer «Old process» CD ~ 15nm BCP pattern transfer CD ~ 15nm 100nm CD ~ 15nm P. Pimenta Barros et al. Proc of SPIE 2014, DSA performances 100nm depending on guiding patterns density 11
12 Normalized BCP thickness Hole Open Yield (%) BCP THICKNESS VARIATION DEPENDENCE ON PRE- PATTERN DENSITY BCP thickness = f (pitch) (a) (b) pitch guiding (nm) (c) old process Hole Open Yield = f (pitch) (a) (b) pitch guiding (nm) (c) old process (a) pitch = 110nm (b) pitch = 250nm (c) pitch = 450nm old process old process old process Defectivity over pre-pattern density induced by BCP film thickness variation 12
13 Litho DSA process flow PS PMMA Guiding pattern (193i litho) Guiding pattern (SOC/SiARC etching) Surface preparation BCP coating Self-assembly annealing PMMA removal DSA planarization BCP over-thickness filling Self-assembly annealing Etch-back & PMMA removal 13
14 Normalized BCP thickness Hole Open Yield (%) «DSA PLANARIZATION» VS. «OLD PROCESS» BCP thickness = f (pitch) 1.8 (c) (b) (a) pitch guiding (nm) old process Hole Open Yield = f (pitch) (a) old process (b) (c) pitch guiding (nm) (a) pitch = 110nm (b) pitch = 250nm (c) pitch = 450nm old process old process old process Defectivity over template density induced by BCP film thickness variation 14
15 Normalized BCP thickness Hole Open Yield (%) «DSA PLANARIZATION» VS. «OLD PROCESS» BCP thickness = f (pitch) (a) (b) pitch guiding (nm) (c) old process new process Hole Open Yield = f (pitch) old process (a) new process (b) (c) pitch guiding (nm) (a) pitch = 110nm (b) pitch = 250nm (c) pitch = 450nm old process new process old process new process old process new process Red: Old process filling guiding patterns with thin BCP film thickness Green: DSA planarization process 15
16 «DSA PLANARIZATION» VS. «OLD PROCESS» P. Pimenta Barros et al. Proc of SPIE 2015, 94280D DSA planarization approach enables to accommodate different template densities on the same processed wafer 16
17 CH doubling CH shrink ISO/DENSE BIAS CONTROL FOR SINGLE & MULTIPLE CONTACTS Dense Semi-Dense Isolated Contact multiplication All images are taken on the same processed wafer Full control of BCP self-assembly through pitch R. Tiron et al. Proc of SPIE 2015,
18 OUTLINE Introduction DSA planarization approach BCP molecular weight commensurability Pre-pattern affinity control Conclusion 18
19 CD DSA (nm) CH SHRINK COMMENSURABILITY CH shrink PW = f (CD guide L 0 = 35nm Process Window (PW) = CD guiding range for 100% HOY 25 Region 1 Region 2 Region 3 BCP: C35 (L 0 = 35nm) 100 Deformed contacts CD guiding =63.3nm CD DSA =22.2nm 100nm ΔCD DSA = 2nm PW HOY (%) CD guiding =53.1nm CD DSA =20.3nm missing contacts 100nm 10 ΔCD guiding = 10nm CDguiding (nm) 20 0 CD guiding =35.7nm CD DSA =17.1nm 100nm CH shrink achieved over 10 nm CD guiding range: 20% CD guiding latitude Slight DSA CD variation of 2nm : BCP absorbs CD guiding variation 19
20 CD DSA (nm) CH SHRINK COMMENSURABILITY CH shrink PW = f (CD guide ; L 0 ) n m 100n m C23 PW ΔCD guiding 45 nm C35 PW 100n m C46 PW C46 L 0 = 46nm C41 L 0 = 41nm C35 L 0 = 35nm C27 L 0 = 27nm C23 L 0 = 23nm ΔL 0 23 nm CD guiding (nm) L 0 : BCP intrinsic period CD guiding (nm) L 0 (nm) BCP molecular weight can be adapted to shrink a needed CD guide 20
21 CH MULTIPLICATION COMMENSURABILITY CH multiplication PW = f (CD guide L 0 = 35nm BCP: C35 (L 0 = 35nm) Pitch can be also sized by pre-pattern dimensions p40nm p80nm 100nm Scale bar = 100nm CH multiplication is depending on (BCP ; Pre-pattern) commensurability 21
22 L guiding (nm) CH MULTIPLICATION COMMENSURABILITY L 0 = 46nm CH doubling PW = f (CD guide ; L 0 ) W guiding L guiding C46 PW (L 0 = 46nm) C35 PW (L 0 = 35nm) C46 C35 L 0 = 35nm C23 PW (L 0 = 23m) C23 70 L 0 = 23nm W guiding (nm) 100nm DSA pitch is siezd by BCP molecular weight Pre-pattern commensurability should be respected 22
23 OUTLINE Introduction DSA planarization approach BCP molecular weight commensurability Pre-pattern affinity control Conclusion 23
24 Litho DSA process flow PS PMMA Guiding pattern (193i litho) Guiding pattern (SOC/SiARC etching) Surface preparation BCP over-thickness filling Self-assembly annealing Etch-back & PMMA removal Pre-pattern surface affinity control Flavor #1: PS affine Flavor #2: PMMA affine (2 BCP chains) (4 BCP chains) 24
25 Hole Open Yield (%) CH SHRINK PW DETERMINATION: HOY BCP: C35 (L 0 = 35nm) Hole Open Yield = f(cd guiding ) 120 (b) PS affine 100 PMMA affine 80 (a) (c) PS affine CD guide = 40nm PS affine PW PMMA affine 20 0 PMMA affine PW CD guiding (nm) CD guide = 55nm PW = CD guiding range for 100% HOY CH shrink PW is modified depending on pre-pattern affinity 25
26 Misalignment (nm) CDU (%) CH SHRINK PW DETERMINATION: CDU & PE BCP: C35 Placement error = f(cd guiding ) 3.5 PS affine 3 PMMA affine 2.5 neutral DSA CD Uniformity = f(cd guiding ) PW PW PW CD guiding (nm) CD guiding (nm) PE & CDU measurements confirm PW definition: PW Better PE and CDU with PS affine process: brushes allowing to better control the surface affinity 26
27 PS affine flavor C46 BCP (L 0 = 46nm) BRUSH M W : A SUPPLEMENTARY PARAMETER TO TUNE PW A/ Low-M w brush CD guiding 60nm B/ High-M w brush CD guiding 85nm CD DSA 20nm CD DSA 20nm For a same BCP, CH shrink PW can be changed by tuning the brush molecular weight 27
28 OUTLINE Introduction DSA planarization approach BCP molecular weight commensurability Pre-pattern affinity control Conclusion 28
29 DSA planarization approach enables to accommodate different template densities on the same wafer PW methodology is available to monitor and benchmark different process flavors CDU, HOY, PE Different ways can be used to shrink a targeted CD by tunning: CONCLUSION BCP molecular weight Brush molecular weight Surface affinity Template surface affinity control is crucial in DSA process to improve CDU, PE and defectivity to tune CH PW 29
30 ACKNOWLEDGMENTS Raluca Tiron Patricia Pimenta-Barros Sandra Bos Shayma Bouanani Gaelle Chamiot-Maitral Maxime Argoud Antoine Fouquet Jerome Hazart Sebastien Berard-Bergery Celine Lapeyre Sebastie Barnola Loic Perraud Xavier Chevalier Christophe Navarro Celia Nicolet Cedric Mongez Vincent Farys Guillaume Fleury Georges Hadziioannou PLACYD 30
31 Thank you for your attention 31
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