Influence of Amorphous Carbon Deposition on the Probability for Recombination of Neutral Oxygen Atoms on Aluminium Surfaces

Size: px
Start display at page:

Download "Influence of Amorphous Carbon Deposition on the Probability for Recombination of Neutral Oxygen Atoms on Aluminium Surfaces"

Transcription

1 Influence of Amorphous Carbon Deposition on the Probability for Recombination of Neutral Oxygen Atoms on Aluminium Surfaces A. Drenik, A. Vesel Center of Excellence for Polymer Materials and Technologies Tehnološki park 4, 1000 Ljubljana, Slovenia P. Panjan, M. Mozetič Jožef Stefan Institute Jamova 39, SI-1000 Ljubljana, Slovenia ABSTRACT In fusion devices with carbon-based plasma facing components, the accumulation of amorphous carbon deposits on various in-vessel surfaces is unavoidable. As it has been identified as a major contribution to fuel retention, the carbon deposits should be regularly removed. One of the suggested cleaning techniques is removal by neutral oxygen atoms. Efficiency of this cleaning method will in a great way depend on the density of atoms in the vicinity of carbon-covered surfaces. The atom density will, in turn, greatly depend on the recombination coefficient of the surfaces. In this work, we study the impact that amorphous carbon contamination has on the recombination coefficient of a solid surface. The influence of surface coverage by an amorphous carbon deposit on the recombination coefficient of aluminium for neutral oxygen atoms was investigated by measuring the recombination coefficient of a pristine aluminium surface and a surface covered by an amorphous carbon deposit. The recombination coefficient was determined by measuring the spatial distribution of oxygen atoms in a side-arm lined with aluminium/amorphous carbon surface. Oxygen densities were measured by means of Fiber Optic Catalytic Probes. An inductively coupled radiofrequency discharge created in pure oxygen was used as a source of neutral oxygen atoms at room temperature. The probability of recombination of a carbon-covered surface was found to increase by a factor of four in regard to the pristine aluminium surface. 1 Introduction In the effort to solve the problem of future energy supplies, ITER will no doubt play a very important role. Among the many scientific and technological problems that are occupying the research teams working on development of ITER is the question of the material out of which plasma facing components will be constructed. Due to the low Z and excellent 607.1

2 607. thermal characteristics, carbon-based materials such as carbon fibre composites are very attractive candidates for the plasma facing components[1, ]. However, they are strongly susceptible to chemical erosion by hydrogen atoms from the fusion plasma[3]. Hydrogen atoms interact with carbon atoms from the plasma facing components, forming carbohydrate complexes which are subsequently re-deposited on the inner walls of the reactor. Thus, thin films of hydrogenated amorphous carbon deposits (a-c:h) are being formed. Depending on the position in the reactor, the hydrogen content in the deposits can reach up to 40 %. In the case of operation with D-T fuel mixtures, this leads to retention of tritium inside the reactor, which is a very undesired effect[4]. In order to ensure the undisturbed operation of ITER, the a-c:h deposits must be regularly removed. A very promising method of removing such deposits is by oxidation[5-10]. While standard forms of oxidation (baking in O atmosphere, oxygen/helium glow discharges) have also proved successful in removing of a-c:h deposits, they are not applicable within the limitations set by the ITER environment. The solution lies in oxidation by neutral oxygen atoms. Neutral atoms on the other hand have been shown to achieve suitable rates of erosion even within the temperature limits in ITER[11]. Namely, at the temperature of 575 K the achieved erosion rate was 10 nm/s. One of the key influences on the efficiency of the cleaning method will be the density of oxygen atoms within the reactor[1]. In confined spaces, one of the main mechanisms of loss of atoms is recombination on solid surfaces. Recombination is the event in which two neutral oxygen atoms join to form an O molecule. Because recombination is an exothermic process and due to laws of conservation of energy and momentum, a third body must be present to absorb the excess energy. Since a three-body collision in the gas phase is an extremely unlikely event at pressures below 100 Pa, recombination takes place almost exclusively on solid surfaces. In brief, the recombination process starts when neutral oxygen atoms are adsorbed on chemisorption sites on the surface. The surface is filled with both chemisorption and physisorption sites. The bond which binds atoms onto the physisorption sites is not as strong and allows them to either desorb into the gas phase or diffuse along the surface. The bond on the chemisorption sites, on the other hand, is strong enough to keep the atoms localized until they take part in the recombination reaction: O O O Wdis + +, (1) where W dis is the dissociation energy (5.1 ev), released at the reaction. The second atom in the reaction can either come directly from the gas phase[13], which is known as the Eley- Rideal process, or from a neighbouring physisorption site, by surface diffusion, which is known as the Langmuir-Hinshelwood process[14]. Except at very low neutral atom densities, the surface chemisorption sites are fully occupied. Therefore, recombination becomes a 1 st order reaction, meaning that its rate is proportional to the rate of atoms colliding with the surface from the gas phase: r = γ j, () where r is the rate of recombination per surface area, j is the flux density of impinging neutral oxygen atoms and γ is the recombination coefficient. The recombination coefficient is defined as the probability that an atom, colliding with the wall, will find a partner and form a molecule. The probability depends on many microscopic parameters such as binding energy of the chemisorption sites, mobility of atoms across the surface, desorption frequency, etc, as well as

3 607.3 not-so microscopic ones, such as surface roughness[15]. In general, the recombination coefficient is difficult to predict and empirical determination of its value can in some cases be more accurate. Moreover, the recombination coefficient can be highly susceptible to the contamination of the surface with foreign species. In the case of the ITER environment, the inner walls of the reactor will be eventually covered with amorphous carbon. It is reasonable to expect that this will be the dominant influence on the probability of recombination on the walls. Therefore, when predicting the propagation of neutral oxygen atoms throughout the reactor, one should pay attention to the possible changes in the recombination coefficient of the relevant solid surfaces. In this paper, we present our experiments in which we experimentally determined the influence of amorphous carbon contamination on the recombination coefficient of an aluminium surface. Experimental The experimental set-up used in our experiments is presented in Fig. (1). The main part of the experimental reactor is a cylindrical borosilicate glass tube with the inner diameter of 36 mm. The system was pumped with a two stage rotary pump with which we were able to achieve the base pressure of around 5 Pa. A stream of partially dissociated oxygen at room temperature was fed into the experimental chamber. The oxygen was dissociated in a weakly ionized inductively coupled discharge, created by means of a 7.1 MHz generator coupled to the reactor with a 1 turn coil. Oxygen of commercially available purity was leaked into the discharge region at pressures between 40 Pa and 180 Pa. The degree of dissociation of oxygen in the experimental chamber reached up to 11 % Figure 1: The experimental set-up. 1 oxygen bottle, reduction valve, 3 needle valve, 4 discharge chamber, 5 experimental chamber, 6 pressure gauge, 7 zeolyte trap, 8 high vacuum linear valve, 9 pump.

4 607.4 The recombination coefficient of the sample surface was determined by measuring the spatial distribution of the density of neutral oxygen atoms in the presence of the sample. The measurement was performed in a side-chamber, perpendicular to the main part of the experimental chamber. The inner wall of the side-chamber was lined with the observed sample surface. The neutral oxygen atom density profile was measured by means of a movable nickel-tipped fiber optic catalytic probe (FOCP)[16, 17]. The side-chamber set-up is presented in Fig. (). A Teflon disc is mounted approximately 10 mm below the probe tip. The disc effectively prevents further diffusion of neutral oxygen atoms further along the sidechamber, which makes subsequent calculations considerably easier as the well-defined disc makes for an easily describable boundary condition. γ 1 z L 3 γ + d 1 Figure : The side-arm of the reactor. 1 FOCP, holder, 3 Teflon endplate. z distance from the beginning of the side-arm to the probe tip, d distance from the probe tip to the Teflon endplate, L effective length of the side-arm, γ 1 recombination coefficient of the side-chamber wall, γ recombination coefficient of the Teflon endplate. Beside the movable FOCP in the side-chamber another nickel-tipped FOCP was mounted in the main part of the experimental chamber to monitor the neutral oxygen atom density during the course of the experiment. The first set of measurements was performed with a cylinder of pristine aluminium foil, inserted in the side-chamber. The second set was performed after the aluminium foil was deposited with a 500 nm thick layer of amorphous carbon. The deposition was done in a thermionic arc sputtering system, by sputtering a graphite target in an argon atmosphere. 3 Results and Discussion The measured density profiles in an aluminium-lined side-chamber are presented in Fig. (3). Depending on the source gas pressure, the densities could be measured up to the distance from the opening of the side-chamber of about 40 mm. After that point, the density falls below the threshold of detection of the FOCP.

5 607.5 Figure 3: Neutral atom densities vs. position, in the side-chamber lined with an aluminium surface, recorded at various source gas pressures. In order to evaluate the recombination coefficient, we used Smith s diffusion model[18]. The main assumption of the model is that the net mass flow through the sidechamber is zero and the only way of propagation of neutral atoms through the side-chamber is diffusion. Since our side-chamber is placed perpendicularly to the gas flow, the assumption is justified. Let us thus consider the side-chamber of the length L and a circular cross-section with the diameter of R. The recombination coefficient of the walls, at r = R, is γ 1 and the recombination coefficient of the endplate, at z = L, is γ. The equation that describes the density of atoms is the diffusion equation: n D n=, (3) t where n is the density of atoms. Since we are interested in the stationary case, it simplifies to the Laplace equation: ( ) n r, z = 0. (4) The boundary condition at the wall of the side-arm is: C nr ( R, z) = n( R, z), (5) R where the coefficient C is: n n + nm C = Rvγ1, (6) γ1 8D1 1 where v is the mean thermal velocity of oxygen atoms, γ 1 is the recombination coefficient of the wall of the side-arm, D 1 is the interdiffusion coefficient of O atoms in the gaseous mixture and n M is the density of oxygen molecules.

6 607.6 Analogously the boundary condition at the end-plate of the side-arm is: Q nz ( r, L) = n( r, L), (7) R and the coefficient is: n n + nm Q= Rvγ, (8) γ 8D1 1 where γ is the recombination coefficient of the end-plate. Taking into account that the density at the opening of the side-arm is constant and equal to the density of atoms in the main part of the experimental chamber, n 0, and assuming the radial symmetry of the solution, we get: (, ) n r z Q L z L z r sinh αm + cosh αm J0 αm J1( αm) αn R R R = n 0, (9) m Q L L sinh αm + cosh αm R ( J0( αm) + J1 ( αm) ) αn R R where α m are coefficients determined by the boundary condition expressed in Eq. (6): ( ) C J ( ) α J α = α. (10) m 1 m 0 m It should be noted that in our experimental configuration, the length of the side-chamber changes when the FOCP is moved. Thus, taking into account that the length of the sidechamber is L = x+ d, Eq. (9) becomes: (, ) n r x = n 0 m Q d d r sinh αm + cosh αm J0 αm J1( αm) αn R R R Q x+ d x+ d sinh α + cosh α R J α + J α αn R R ( 0( ) 1 ( )) m m m m. (11) When fitting the model to the experimentally obtained results, the diffusion coefficients were calculated from the measurements of the degree of dissociation in the main part of the experimental chamber, and the source gas pressure. The value of the recombination for Teflon we used was γ = The average value of the aluminium foil was found to be γ 1 = ± The density profiles measured in the second part of the experiment, when the aluminium foil, inserted in the side-chamber, was covered by a 500 nm thick film of amorphous carbon, are presented in Fig. (4). From the first glance one can see that the depth range in which the profiles could be measured is much shorter. The neutral oxygen atom density drops below the level of detection at the depth of 7 mm in contrast to 43 mm in the

7 607.7 case of pristine aluminium. Fitting these results to the model, we obtained the average value of recombination coefficient of γ 1 = ± Figure 4: Neutral atom densities vs. position, in the side-chamber lined with a surface, contaminated with amorphous carbon, recorded at various source gas pressures. 4 Conclusion Contamination of surfaces with amorphous carbon deposits will present a significant problem in fusion devices with carbon-based plasma facing components. Among other effects, the contamination could impact the recombination coefficient for neutral oxygen atoms of the inner walls of the reactor and therefore change the efficiency of fuel removal methods that are based on oxidation by neutral oxygen atoms. We have studied the impact of coverage by amorphous carbon by measuring the recombination coefficient of an aluminium surface, and an aluminium surface covered by an amorphous carbon deposit. The recombination coefficient was observed by measuring the density profile of neutral oxygen atoms in a closed side-chamber of a plasma reactor, where the wall was lined with the sample material. The value of the recombination coefficient was determined by using Smith s diffusion model. We noticed that while the recombination coefficient of the contaminated surface was still relatively low, it was nonetheless greater than that of the pristine surface by a factor of 4. Even in our experimental system with relatively small dimensions, this had a drastic impact on the decay length of atom densities in the side-chamber. This illustrates the fact that even at relatively low values of the recombination coefficient, the recombination can have a profound effect on neutral atom densities in confined spaces. 5 Acknowledgement The author acknowledges the financial support from the Ministry of Higher Education, Science and Technology of the Republic of Slovenia through the contract No (Center of Excellence Polymer Materials and Technologies).

8 References 1. J. Linke, "High heat flux performance of plasma facing materials and components under service conditions in future fusion reactors", Fusion Sci. Technol. 53, 008, T, pp U. Samm, "Plasma-wall interaction in magnetically confined fusion plasmas", Fusion Sci. Technol. 53, 008, T, pp A. Kirschner, D. Borodin, et al., "Modelling of tritium retention and target lifetime of the ITER divertor using the ERO code", J. Nucl. Mater. 363, 007, G. Counsell, P. Coad, et al., "Tritium retention in next step devices and the requirements for mitigation and removal techniques", Plasma Phys. Control. Fusion 48, 006, 1B, pp. B189-B J.A. Ferreira, F.L. Tabares, et al., "Removal of carbon deposits in narrow gaps by oxygen plasmas at low pressure", Journal of Vacuum Science & Technology A 5, 007, 4, pp J.S. Hu, J.G. Li, et al., "Oxygen removal with D--ICR cleanings after oxidation experiment in HT-7", Fusion Engineering and Design 8, 007,, pp C. Stancu, M. Teodorescu, et al., "Carbon layers cleaning from inside of narrow gaps by a RF glow discharge", Surface & Coatings Technology 05, 011, S435-S I. Tanarro, J.A. Ferreira, et al., "Removal of carbon films by oxidation in narrow gaps: Thermo-oxidation and plasma-assisted studies", J. Nucl. Mater , 009, A. Vesel, M. Mozetic, et al., "Etching of carbon-tungsten composite with oxygen plasma", Surface & Coatings Technology 04, 010, 9-10, pp R. Zaplotnik, A. Vesel, et al. "Interaction of Air Plasma with Graphite at Elevated Temperature", International Conference Nuclear Energy for New Europe A. Drenik, A. Vesel, et al., "Controlled carbon deposit removal by oxygen radicals", J. Nucl. Mater. 386, 009, A. Drenik, A. Tomeljak, et al., "Behaviour of neutral hydrogen atom density in the presence of a sample holder in a plasma reactor", Vacuum 84, 009, 1, pp A. Gelb and S.K. Kim, "Theory of Atomic Recombination on Surfaces", The Journal of Chemical Physics 55, 1971, 10, pp Y.C. Kim and M. Boudart, "Recombination of O,N, and H-Atoms on silica - kinetics and mechanism", Langmuir 7, 1991, 1, pp V. Guerra, "Analytical model of heterogeneous atomic recombination on silicalike surfaces", IEEE Trans. Plasma Sci. 35, 007, 5, pp I. Poberaj, M. Mozetic, et al., "Comparison of fiber optics and standard nickel catalytic probes for determination of neutral oxygen atoms concentration", J. Vac. Sci. Technol. A-Vac. Surf. Films 0, 00, 1, pp D. Babic, I. Poberaj, et al., "Fiber optic catalytic probe for weakly ionized oxygen plasma characterization", Review of Scientific Instruments 7, 001, 11, pp W.V. Smith, "The Surface Recombination of H Atoms and OH Radicals", The Journal of Chemical Physics 11, 1943, 3, pp

1 EX/P4-8. Hydrogen Concentration of Co-deposited Carbon Films Produced in the Vicinity of Local Island Divertor in Large Helical Device

1 EX/P4-8. Hydrogen Concentration of Co-deposited Carbon Films Produced in the Vicinity of Local Island Divertor in Large Helical Device 1 EX/P4-8 Hydrogen Concentration of Co-deposited Carbon Films Produced in the Vicinity of Local Island Divertor in Large Helical Device T. Hino 1,2), T. Hirata 1), N. Ashikawa 2), S. Masuzaki 2), Y. Yamauchi

More information

Electrical Discharges Characterization of Planar Sputtering System

Electrical Discharges Characterization of Planar Sputtering System International Journal of Recent Research and Review, Vol. V, March 213 ISSN 2277 8322 Electrical Discharges Characterization of Planar Sputtering System Bahaa T. Chaid 1, Nathera Abass Ali Al-Tememee 2,

More information

Effect of Spiral Microwave Antenna Configuration on the Production of Nano-crystalline Film by Chemical Sputtering in ECR Plasma

Effect of Spiral Microwave Antenna Configuration on the Production of Nano-crystalline Film by Chemical Sputtering in ECR Plasma THE HARRIS SCIENCE REVIEW OF DOSHISHA UNIVERSITY, VOL. 56, No. 1 April 2015 Effect of Spiral Microwave Antenna Configuration on the Production of Nano-crystalline Film by Chemical Sputtering in ECR Plasma

More information

A Catalytic Sensor for Measurement of Radical Density in CO 2 Plasmas

A Catalytic Sensor for Measurement of Radical Density in CO 2 Plasmas Sensors 01, 1, 16168-16181; doi:10.3390/s1116168 Article OPEN ACCESS sensors ISSN 144-80 www.mdpi.com/journal/sensors A Catalytic Sensor for Measurement of Radical Density in CO Plasmas Alenka Vesel 1,

More information

Surface processes during thin-film growth

Surface processes during thin-film growth Plasma Sources Sci. Technol. 9 (2000) 455 467. Printed in the UK PII: S0963-0252(00)15187-4 Surface processes during thin-film growth Achim von Keudell Max-Planck-Institut für Plasmaphysik, Boltzmannstrasse

More information

In-vessel Tritium Inventory in ITER Evaluated by Deuterium Retention of Carbon Dust

In-vessel Tritium Inventory in ITER Evaluated by Deuterium Retention of Carbon Dust FT/P1-19 In-vessel Tritium Inventory in ITER Evaluated by Deuterium Retention of Carbon Dust T. Hino 1), H. Yoshida 1), M. Akiba 2), S. Suzuki 2), Y. Hirohata 1) and Y. Yamauchi 1) 1) Laboratory of Plasma

More information

A Fiber Optic Catalytic Sensor for Neutral Atom Measurements in Oxygen Plasma

A Fiber Optic Catalytic Sensor for Neutral Atom Measurements in Oxygen Plasma Sensors 2012, 12, 3857-3867; doi:10.3390/s120403857 Article OPEN ACCESS sensors ISSN 1424-8220 www.mdpi.com/journal/sensors A Fiber Optic Catalytic Sensor for Neutral Atom Measurements in Oxygen Plasma

More information

Study of DC Cylindrical Magnetron by Langmuir Probe

Study of DC Cylindrical Magnetron by Langmuir Probe WDS'2 Proceedings of Contributed Papers, Part II, 76 8, 22. ISBN 978-737825 MATFYZPRESS Study of DC Cylindrical Magnetron by Langmuir Probe A. Kolpaková, P. Kudrna, and M. Tichý Charles University Prague,

More information

1. INTRODUCTION 2. EXPERIMENTAL SET-UP CHARACTERIZATION OF A TUBULAR PLASMA REACTOR WITH EXTERNAL ANNULAR ELECTRODES

1. INTRODUCTION 2. EXPERIMENTAL SET-UP CHARACTERIZATION OF A TUBULAR PLASMA REACTOR WITH EXTERNAL ANNULAR ELECTRODES Romanian Reports in Physics, Vol. 57, No. 3, P. 390-395, 2005 CHARACTERIZATION OF A TUBULAR PLASMA REACTOR WITH EXTERNAL ANNULAR ELECTRODES C. PETCU, B. MITU, G. DINESCU National Institute for Lasers,

More information

Plasma Deposition (Overview) Lecture 1

Plasma Deposition (Overview) Lecture 1 Plasma Deposition (Overview) Lecture 1 Material Processes Plasma Processing Plasma-assisted Deposition Implantation Surface Modification Development of Plasma-based processing Microelectronics needs (fabrication

More information

Neutral beam plasma heating

Neutral beam plasma heating Seminar I b 1 st year, 2 nd cycle program Neutral beam plasma heating Author: Gabrijela Ikovic Advisor: prof.dr. Tomaž Gyergyek Ljubljana, May 2014 Abstract For plasma to be ignited, external heating is

More information

DEPOSITION OF THIN TiO 2 FILMS BY DC MAGNETRON SPUTTERING METHOD

DEPOSITION OF THIN TiO 2 FILMS BY DC MAGNETRON SPUTTERING METHOD Chapter 4 DEPOSITION OF THIN TiO 2 FILMS BY DC MAGNETRON SPUTTERING METHOD 4.1 INTRODUCTION Sputter deposition process is another old technique being used in modern semiconductor industries. Sputtering

More information

EROSION AND DEPOSITION MECHANISMS IN FUSION PLASMAS. A. Kirschner

EROSION AND DEPOSITION MECHANISMS IN FUSION PLASMAS. A. Kirschner EROSION AND DEPOSITION MECHANISMS IN FUSION PLASMAS A. Kirschner Institut für Energieforschung (Plasmaphysik), Forschungszentrum Jülich GmbH, Association EURATOM-FZJ, Trilateral Euregio Cluster, 52425

More information

Estimation of the contribution of gaps to tritium retention in the divertor of ITER

Estimation of the contribution of gaps to tritium retention in the divertor of ITER Estimation of contribution of gaps to tritium retention in the divertor of ITER 1 Estimation of the contribution of gaps to tritium retention in the divertor of ITER 1. Introduction D. Matveev 1,2, A.

More information

Chemical Sputtering of Carbon Materials due to Combined Bombardment by Ions and Atomic Hydrogen

Chemical Sputtering of Carbon Materials due to Combined Bombardment by Ions and Atomic Hydrogen Chemical Sputtering of Carbon Materials due to Combined Bombardment by Ions and Atomic Hydrogen W. Jacob, C. Hopf, and M. Schlüter Max-Planck-Institut für Plasmaphysik, EURATOM Association, Boltzmannstr.

More information

Chapter 6. Summary and Conclusions

Chapter 6. Summary and Conclusions Chapter 6 Summary and Conclusions Plasma deposited amorphous hydrogenated carbon films (a-c:h) still attract a lot of interest due to their extraordinary properties. Depending on the deposition conditions

More information

The Computational Simulation of the Positive Ion Propagation to Uneven Substrates

The Computational Simulation of the Positive Ion Propagation to Uneven Substrates WDS' Proceedings of Contributed Papers, Part II, 5 9,. ISBN 978-8-778-85-9 MATFYZPRESS The Computational Simulation of the Positive Ion Propagation to Uneven Substrates V. Hrubý and R. Hrach Charles University,

More information

6.5 Optical-Coating-Deposition Technologies

6.5 Optical-Coating-Deposition Technologies 92 Chapter 6 6.5 Optical-Coating-Deposition Technologies The coating process takes place in an evaporation chamber with a fully controlled system for the specified requirements. Typical systems are depicted

More information

Etching Issues - Anisotropy. Dry Etching. Dry Etching Overview. Etching Issues - Selectivity

Etching Issues - Anisotropy. Dry Etching. Dry Etching Overview. Etching Issues - Selectivity Etching Issues - Anisotropy Dry Etching Dr. Bruce K. Gale Fundamentals of Micromachining BIOEN 6421 EL EN 5221 and 6221 ME EN 5960 and 6960 Isotropic etchants etch at the same rate in every direction mask

More information

CHAPTER 6: Etching. Chapter 6 1

CHAPTER 6: Etching. Chapter 6 1 Chapter 6 1 CHAPTER 6: Etching Different etching processes are selected depending upon the particular material to be removed. As shown in Figure 6.1, wet chemical processes result in isotropic etching

More information

Molecular Dynamics Simulation of Chemical Sputtering of Hydrogen Atom on Layer Structured Graphite

Molecular Dynamics Simulation of Chemical Sputtering of Hydrogen Atom on Layer Structured Graphite 1 TH/7-1 Molecular Dynamics Simulation of Chemical Sputtering of Hydrogen Atom on Layer Structured Graphite A. Ito 1,2), Y. Wang 1), S. Irle 1), K. Morokuma 3), and H. Nakamura 2) 1) Nagoya University,

More information

NSTX Plasma-Material Interface (PMI) Probe and supporting experiments

NSTX Plasma-Material Interface (PMI) Probe and supporting experiments NSTX Plasma-Material Interface (PMI) Probe and supporting experiments J.P. Allain 1,2, C.N. Taylor 1, B. Heim 1,3 PPPL Collaborators: C.H. Skinner, H.W. Kugel, R. Kaita, A.L. Roquemore 1 Purdue University,

More information

Electron Density and Ion Flux in Diffusion Chamber of Low Pressure RF Helicon Reactor

Electron Density and Ion Flux in Diffusion Chamber of Low Pressure RF Helicon Reactor WDS'06 Proceedings of Contributed Papers, Part II, 150 155, 2006. ISBN 80-86732-85-1 MATFYZPRESS Electron Density and Ion Flux in Diffusion Chamber of Low Pressure RF Helicon Reactor R. Šmíd Masaryk University,

More information

Repetition: Practical Aspects

Repetition: Practical Aspects Repetition: Practical Aspects Reduction of the Cathode Dark Space! E x 0 Geometric limit of the extension of a sputter plant. Lowest distance between target and substrate V Cathode (Target/Source) - +

More information

LECTURE 5 SUMMARY OF KEY IDEAS

LECTURE 5 SUMMARY OF KEY IDEAS LECTURE 5 SUMMARY OF KEY IDEAS Etching is a processing step following lithography: it transfers a circuit image from the photoresist to materials form which devices are made or to hard masking or sacrificial

More information

Numerical Simulation: Effects of Gas Flow and Rf Current Direction on Plasma Uniformity in an ICP Dry Etcher

Numerical Simulation: Effects of Gas Flow and Rf Current Direction on Plasma Uniformity in an ICP Dry Etcher Appl. Sci. Converg. Technol. 26(6): 189-194 (2017) http://dx.doi.org/10.5757/asct.2017.26.6.189 Research Paper Numerical Simulation: Effects of Gas Flow and Rf Current Direction on Plasma Uniformity in

More information

Introduction to Thin Film Processing

Introduction to Thin Film Processing Introduction to Thin Film Processing Deposition Methods Many diverse techniques available Typically based on three different methods for providing a flux of atomic or molecular material Evaporation Sputtering

More information

Energy fluxes in plasmas for fabrication of nanostructured materials

Energy fluxes in plasmas for fabrication of nanostructured materials Energy fluxes in plasmas for fabrication of nanostructured materials IEAP, Universität Kiel 2nd Graduate Summer Institute "Complex Plasmas" August 5-13, 2010 in Greifswald (Germany) AG 1 Outline Motivation

More information

M. Rutigliano a, D. Santoro a, and M. Balat-Pichelin b

M. Rutigliano a, D. Santoro a, and M. Balat-Pichelin b M. Rutigliano a, D. Santoro a, and M. Balat-Pichelin b a CNR IMIP, Istituto di Metodologie Inorganiche e dei Plasmi, Via G. Amendola 122/D, 70126 Bari, Italy b Laboratoire Procédés, Matériaux et Energie

More information

Molecular Dynamics Study of Plasma Surface Interactions for Mixed Materials

Molecular Dynamics Study of Plasma Surface Interactions for Mixed Materials J. Plasma Fusion Res. SERIES, Vol. 9 () Molecular Dynamics Study of Plasma Surface Interactions for Mixed Materials Kaoru OHYA, Naohide MOHARA, Kensuke INAI, Atsushi ITO, Hiroaki NAKAMURA, Yoshio UEDA

More information

Effect of negative ions on the characteristics of plasma in a cylindrical discharge

Effect of negative ions on the characteristics of plasma in a cylindrical discharge Araghi and Dorranian Journal of Theoritical and Applied Physics 2013, 7:41 RESEARCH Open Access Effect of negative ions on the characteristics of plasma in a cylindrical discharge Farnaz Araghi and Davoud

More information

The low-field density peak in helicon discharges

The low-field density peak in helicon discharges PHYSICS OF PLASMAS VOLUME 10, NUMBER 6 JUNE 2003 Francis F. Chen a) Electrical Engineering Department, University of California, Los Angeles, Los Angeles, California 90095-1597 Received 10 December 2002;

More information

TMT4320 Nanomaterials November 10 th, Thin films by physical/chemical methods (From chapter 24 and 25)

TMT4320 Nanomaterials November 10 th, Thin films by physical/chemical methods (From chapter 24 and 25) 1 TMT4320 Nanomaterials November 10 th, 2015 Thin films by physical/chemical methods (From chapter 24 and 25) 2 Thin films by physical/chemical methods Vapor-phase growth (compared to liquid-phase growth)

More information

STRONG DOUBLE LAYER STRUCTURE IN THERMIONIC VACUUM ARC PLASMA *

STRONG DOUBLE LAYER STRUCTURE IN THERMIONIC VACUUM ARC PLASMA * STRONG DOUBLE LAYER STRUCTURE IN THERMIONIC VACUUM ARC PLASMA * V. TIRON 1, L. MIHAESCU 1, C.P. LUNGU 2 and G. POPA 1 1 Faculty of Physics, Al. I. Cuza University, 700506, Iasi, Romania 2 National Institute

More information

Trends in plasma applications

Trends in plasma applications 3 International Conference on Frontiers of Plasma Physics and Technology Trends in plasma applications R. Barni Centro PlasmaPrometeo Bangkok 5 March 27 Plasma processing Trends towards atmospheric pressure:

More information

CARBON NANOSTRUCTURES SYNTHESIZED THROUGH GRAPHITE ETCHING

CARBON NANOSTRUCTURES SYNTHESIZED THROUGH GRAPHITE ETCHING CARBON NANOSTRUCTURES SYNTHESIZED THROUGH GRAPHITE ETCHING Q. Yang 1, C. Xiao 1, R. Sammynaiken 2 and A. Hirose 1 1 Plasma Physics Laboratory, University of Saskatchewan, 116 Science Place Saskatoon, SK

More information

Ion beam analysis methods in the studies of plasma facing materials in controlled fusion devices

Ion beam analysis methods in the studies of plasma facing materials in controlled fusion devices Vacuum 70 (2003) 423 428 Ion beam analysis methods in the studies of plasma facing materials in controlled fusion devices M. Rubel a, *, P. Wienhold b, D. Hildebrandt c a Alfv!en Laboratory, Royal Institute

More information

Effects of cross field diffusion in a low pressure high density oxygen/silane plasma

Effects of cross field diffusion in a low pressure high density oxygen/silane plasma Effects of cross field diffusion in a low pressure high density oxygen/silane plasma C. Charles Citation: Journal of Vacuum Science & Technology A 20, 1275 (2002); doi: 10.1116/1.1481042 View online: http://dx.doi.org/10.1116/1.1481042

More information

Tokamak Divertor System Concept and the Design for ITER. Chris Stoafer April 14, 2011

Tokamak Divertor System Concept and the Design for ITER. Chris Stoafer April 14, 2011 Tokamak Divertor System Concept and the Design for ITER Chris Stoafer April 14, 2011 Presentation Overview Divertor concept and purpose Divertor physics General design considerations Overview of ITER divertor

More information

Physics and Modelling of a Negative Ion Source Prototype for the ITER Neutral Beam Injection

Physics and Modelling of a Negative Ion Source Prototype for the ITER Neutral Beam Injection 1 ITR/P1-37 Physics and Modelling of a Negative Ion Source Prototype for the ITER Neutral Beam Injection J.P. Boeuf a, G. Fubiani a, G. Hagelaar a, N. Kohen a, L. Pitchford a, P. Sarrailh a, and A. Simonin

More information

A novel sputtering technique: Inductively Coupled Impulse Sputtering (ICIS)

A novel sputtering technique: Inductively Coupled Impulse Sputtering (ICIS) IOP Conference Series: Materials Science and Engineering A novel sputtering technique: Inductively Coupled Impulse Sputtering (ICIS) To cite this article: D A L Loch and A P Ehiasarian 2012 IOP Conf. Ser.:

More information

Vacuum Pumps. Two general classes exist: Gas transfer physical removal of matter. Mechanical, diffusion, turbomolecular

Vacuum Pumps. Two general classes exist: Gas transfer physical removal of matter. Mechanical, diffusion, turbomolecular Vacuum Technology Vacuum Pumps Two general classes exist: Gas transfer physical removal of matter Mechanical, diffusion, turbomolecular Adsorption entrapment of matter Cryo, sublimation, ion Mechanical

More information

Dynamical Monte-Carlo Simulation of Surface Kinetics

Dynamical Monte-Carlo Simulation of Surface Kinetics Dynamical Monte-Carlo Simulation of Surface Kinetics V. Guerra and J. Loureiro Centro de Física dos Plasmas, Instituto Superior Técnico, 1049-001 Lisboa, Portugal Abstract. This wor presents a theoretical

More information

AMS MEASUREMENTS OF DEUTERIUM CAPTURED IN TUNGSTEN LAYERS DEPOSITED BY MAGNETRON SPUTTERING

AMS MEASUREMENTS OF DEUTERIUM CAPTURED IN TUNGSTEN LAYERS DEPOSITED BY MAGNETRON SPUTTERING Romanian Reports in Physics, Vol. 65, No. 4, P. 1258 1264, 2013 AMS MEASUREMENTS OF DEUTERIUM CAPTURED IN TUNGSTEN LAYERS DEPOSITED BY MAGNETRON SPUTTERING A.R. PETRE 1,3, T. ACSENTE 2, M. ENACHESCU 1,

More information

31704 Dynamic Monte Carlo modeling of hydrogen isotope. reactive-diffusive transport in porous graphite

31704 Dynamic Monte Carlo modeling of hydrogen isotope. reactive-diffusive transport in porous graphite 31704 Dynamic Monte Carlo modeling of hydrogen isotope reactive-diffusive transport in porous graphite * R. Schneider a, A. Rai a, A. Mutzke a, M. Warrier b,e. Salonen c, K. Nordlund d a Max-Planck-Institut

More information

FINAL REPORT. DOE Grant DE-FG03-87ER13727

FINAL REPORT. DOE Grant DE-FG03-87ER13727 FINAL REPORT DOE Grant DE-FG03-87ER13727 Dynamics of Electronegative Plasmas for Materials Processing Allan J. Lichtenberg and Michael A. Lieberman Department of Electrical Engineering and Computer Sciences

More information

ARGON RF PLASMA TREATMENT OF PET FILMS FOR SILICON FILMS ADHESION IMPROVEMENT

ARGON RF PLASMA TREATMENT OF PET FILMS FOR SILICON FILMS ADHESION IMPROVEMENT Journal of Optoelectronics and Advanced Materials Vol. 7, No. 5, October 2005, p. 2529-2534 ARGON RF PLASMA TREATMENT OF FILMS FOR SILICON FILMS ADHESION IMPROVEMENT I. A. Rusu *, G. Popa, S. O. Saied

More information

Discovered by German scientist Johann Hittorf in 1869 and in 1876 named by Eugen Goldstein.

Discovered by German scientist Johann Hittorf in 1869 and in 1876 named by Eugen Goldstein. DO PHYSICS ONLINE CATHODE RAYS CATHODE RAYS (electron beams) Streams of electrons (negatively charged particles) observed in vacuum tubes - evacuated glass tubes that are equipped with at least two metal

More information

Extrel Application Note

Extrel Application Note Extrel Application Note Real-Time Plasma Monitoring and Detection of Trace H 2 O and HF Species in an Argon Based Plasma Jian Wei, 575 Epsilon Drive, Pittsburgh, PA 15238. (Presented at the 191st Electrochemical

More information

Modelling of JT-60U Detached Divertor Plasma using SONIC code

Modelling of JT-60U Detached Divertor Plasma using SONIC code J. Plasma Fusion Res. SERIES, Vol. 9 (2010) Modelling of JT-60U Detached Divertor Plasma using SONIC code Kazuo HOSHINO, Katsuhiro SHIMIZU, Tomonori TAKIZUKA, Nobuyuki ASAKURA and Tomohide NAKANO Japan

More information

Molecular dynamics simulations of C 2,C 2 H, C 2 H 2,C 2 H 3,C 2 H 4, C 2 H 5, and C 2 H 6 bombardment of diamond (111) surfaces

Molecular dynamics simulations of C 2,C 2 H, C 2 H 2,C 2 H 3,C 2 H 4, C 2 H 5, and C 2 H 6 bombardment of diamond (111) surfaces Available online at www.sciencedirect.com Journal of Nuclear Materials 375 (2008) 270 274 www.elsevier.com/locate/jnucmat Molecular dynamics simulations of C 2,C 2 H, C 2 H 2,C 2 H 3,C 2 H 4, C 2 H 5,

More information

Studies on bi-directional hydrogen isotopes permeation through the first wall of a magnetic fusion power reactor

Studies on bi-directional hydrogen isotopes permeation through the first wall of a magnetic fusion power reactor Studies on bi-directional hydrogen isotopes permeation through the first wall of a magnetic fusion power reactor IAEA-CRP Plasma-Wall Interaction with Reduced Activation Steel Surfaces in Fusion Devices

More information

Implantation Energy Dependence on Deuterium Retention Behaviors for the Carbon Implanted Tungsten

Implantation Energy Dependence on Deuterium Retention Behaviors for the Carbon Implanted Tungsten J. Plasma Fusion Res. SERIES, Vol. 10 (2013) Implantation Energy Dependence on Deuterium Retention Behaviors for the Carbon Implanted Tungsten Yasuhisa Oya 1) *, Makoto Kobayashi 1), Naoaki Yoshida 2),

More information

Air exposure and sample storage time influence on hydrogen release from tungsten

Air exposure and sample storage time influence on hydrogen release from tungsten Air exposure and sample storage time influence on hydrogen release from tungsten K.A. Moshkunov a, K. Schmid b, M. Mayer b, V.A. Kurnaev a, Yu.M. Gasparyan a a National research nuclear university MEPhI,

More information

High Beta Discharges with Hydrogen Storage Electrode Biasing in the Tohoku University Heliac

High Beta Discharges with Hydrogen Storage Electrode Biasing in the Tohoku University Heliac J. Plasma Fusion Res. SERIES, Vol. 8 (2009) High Beta Discharges with Hydrogen Storage Electrode Biasing in the Tohoku University Heliac Hiroyasu UTOH, Kiyohiko NISHIMURA 1), Hajime UMETSU, Keiichi ISHII,

More information

Multi-fluid Simulation Models for Inductively Coupled Plasma Sources

Multi-fluid Simulation Models for Inductively Coupled Plasma Sources Multi-fluid Simulation Models for Inductively Coupled Plasma Sources Madhusudhan Kundrapu, Seth A. Veitzer, Peter H. Stoltz, Kristian R.C. Beckwith Tech-X Corporation, Boulder, CO, USA and Jonathan Smith

More information

Repetition: Physical Deposition Processes

Repetition: Physical Deposition Processes Repetition: Physical Deposition Processes PVD (Physical Vapour Deposition) Evaporation Sputtering Diode-system Triode-system Magnetron-system ("balanced/unbalanced") Ion beam-system Ionplating DC-glow-discharge

More information

Chemistry Instrumental Analysis Lecture 34. Chem 4631

Chemistry Instrumental Analysis Lecture 34. Chem 4631 Chemistry 4631 Instrumental Analysis Lecture 34 From molecular to elemental analysis there are three major techniques used for elemental analysis: Optical spectrometry Mass spectrometry X-ray spectrometry

More information

PHYSICAL VAPOR DEPOSITION OF THIN FILMS

PHYSICAL VAPOR DEPOSITION OF THIN FILMS PHYSICAL VAPOR DEPOSITION OF THIN FILMS JOHN E. MAHAN Colorado State University A Wiley-Interscience Publication JOHN WILEY & SONS, INC. New York Chichester Weinheim Brisbane Singapore Toronto CONTENTS

More information

Hong Young Chang Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Republic of Korea

Hong Young Chang Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Republic of Korea Hong Young Chang Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Republic of Korea Index 1. Introduction 2. Some plasma sources 3. Related issues 4. Summary -2 Why is

More information

In search for the limits of

In search for the limits of In search for the limits of rotating cylindrical magnetron sputtering W. P. Leroy, S. Mahieu, R. De Gryse, D. Depla DRAFT Dept. Solid State Sciences Ghent University Belgium www.draft.ugent.be Planar Magnetron

More information

Simulation of the cathode surface damages in a HOPFED during ion bombardment

Simulation of the cathode surface damages in a HOPFED during ion bombardment Simulation of the cathode surface damages in a HOPFED during ion bombardment Hongping Zhao, Wei Lei, a Xiaobing Zhang, Xiaohua Li, and Qilong Wang Department of Electronic Engineering, Southeast University,

More information

DOE WEB SEMINAR,

DOE WEB SEMINAR, DOE WEB SEMINAR, 2013.03.29 Electron energy distribution function of the plasma in the presence of both capacitive field and inductive field : from electron heating to plasma processing control 1 mm PR

More information

PRINCIPLES OF PLASMA DISCHARGES AND MATERIALS PROCESSING

PRINCIPLES OF PLASMA DISCHARGES AND MATERIALS PROCESSING PRINCIPLES OF PLASMA DISCHARGES AND MATERIALS PROCESSING Second Edition MICHAEL A. LIEBERMAN ALLAN J, LICHTENBERG WILEY- INTERSCIENCE A JOHN WILEY & SONS, INC PUBLICATION CONTENTS PREFACE xrrii PREFACE

More information

Metal Deposition. Filament Evaporation E-beam Evaporation Sputter Deposition

Metal Deposition. Filament Evaporation E-beam Evaporation Sputter Deposition Metal Deposition Filament Evaporation E-beam Evaporation Sputter Deposition 1 Filament evaporation metals are raised to their melting point by resistive heating under vacuum metal pellets are placed on

More information

X-Ray Photoelectron Spectroscopy (XPS) Prof. Paul K. Chu

X-Ray Photoelectron Spectroscopy (XPS) Prof. Paul K. Chu X-Ray Photoelectron Spectroscopy (XPS) Prof. Paul K. Chu X-ray Photoelectron Spectroscopy Introduction Qualitative analysis Quantitative analysis Charging compensation Small area analysis and XPS imaging

More information

Modelling of the Target Voltage Behaviour in Reactive Sputtering R. De Gryse*, D. Depla University Ghent, Krijgslaan 281/S1, B-9000 GENT, Belgium

Modelling of the Target Voltage Behaviour in Reactive Sputtering R. De Gryse*, D. Depla University Ghent, Krijgslaan 281/S1, B-9000 GENT, Belgium Modelling of the Target Voltage Behaviour in Reactive Sputtering R. De Gryse*, D. Depla University Ghent, Krijgslaan 28/S, B-9 GENT, Belgium Abstract It has been shown that at least two mechanisms are

More information

Lecture 10. Vacuum Technology and Plasmas Reading: Chapter 10. ECE Dr. Alan Doolittle

Lecture 10. Vacuum Technology and Plasmas Reading: Chapter 10. ECE Dr. Alan Doolittle Lecture 10 Vacuum Technology and Plasmas Reading: Chapter 10 Vacuum Science and Plasmas In order to understand deposition techniques such as evaporation, sputtering,, plasma processing, chemical vapor

More information

The Vacuum Case for KATRIN

The Vacuum Case for KATRIN The Vacuum Case for KATRIN Institute of Nuclear Physics, Forschungszentrum Karlsruhe,Germany, for the KATRIN Collaboration Lutz.Bornschein@ik.fzk.de The vacuum requirements of the KATRIN experiment have

More information

STEADY-STATE EXHAUST OF HELIUM ASH IN THE W-SHAPED DIVERTOR OF JT-60U

STEADY-STATE EXHAUST OF HELIUM ASH IN THE W-SHAPED DIVERTOR OF JT-60U Abstract STEADY-STATE EXHAUST OF HELIUM ASH IN THE W-SHAPED DIVERTOR OF JT-6U A. SAKASAI, H. TAKENAGA, N. HOSOGANE, H. KUBO, S. SAKURAI, N. AKINO, T. FUJITA, S. HIGASHIJIMA, H. TAMAI, N. ASAKURA, K. ITAMI,

More information

k T m 8 B P m k T M T

k T m 8 B P m k T M T I. INTRODUCTION AND OBJECTIVE OF THE EXPERIENT The techniques for evaporation of chemicals in a vacuum are widely used for thin film deposition on rigid substrates, leading to multiple applications: production

More information

The Q Machine. 60 cm 198 cm Oven. Plasma. 6 cm 30 cm. 50 cm. Axial. Probe. PUMP End Plate Magnet Coil. Filament Cathode. Radial. Hot Plate.

The Q Machine. 60 cm 198 cm Oven. Plasma. 6 cm 30 cm. 50 cm. Axial. Probe. PUMP End Plate Magnet Coil. Filament Cathode. Radial. Hot Plate. 1 The Q Machine 60 cm 198 cm Oven 50 cm Axial Probe Plasma 6 cm 30 cm PUMP End Plate Magnet Coil Radial Probe Hot Plate Filament Cathode 2 THE Q MACHINE 1. GENERAL CHARACTERISTICS OF A Q MACHINE A Q machine

More information

Plasma based modification of thin films and nanoparticles. Johannes Berndt, GREMI,Orléans

Plasma based modification of thin films and nanoparticles. Johannes Berndt, GREMI,Orléans Plasma based modification of thin films and nanoparticles Johannes Berndt, GREMI,Orléans What is a plasma? A plasma is a ionized quasineutral gas! + electron electrons Neon bottle Ne atom Ne ion: Ne +

More information

DEPOSITION AND COMPOSITION OF POLYMER FILMS IN FLUOROCARBON PLASMAS*

DEPOSITION AND COMPOSITION OF POLYMER FILMS IN FLUOROCARBON PLASMAS* DEPOSITION AND COMPOSITION OF POLYMER FILMS IN FLUOROCARBON PLASMAS* Kapil Rajaraman and Mark J. Kushner 1406 W. Green St. Urbana, IL 61801 rajaramn@uiuc.edu mjk@uiuc.edu http://uigelz.ece.uiuc.edu November

More information

DPP06 Meeting of The American Physical Society. Production of negative ion plasmas using perfluoromethylcyclohexane (C 7 F 14 )

DPP06 Meeting of The American Physical Society. Production of negative ion plasmas using perfluoromethylcyclohexane (C 7 F 14 ) 1 POSTER JP1.00100 [Bull. APS 51, 165 (2006)] DPP06 Meeting of The American Physical Society Production of negative ion plasmas using perfluoromethylcyclohexane (C 7 F 14 ) Su-Hyun Kim, Robert Merlino,

More information

ETCHING Chapter 10. Mask. Photoresist

ETCHING Chapter 10. Mask. Photoresist ETCHING Chapter 10 Mask Light Deposited Substrate Photoresist Etch mask deposition Photoresist application Exposure Development Etching Resist removal Etching of thin films and sometimes the silicon substrate

More information

FLASH CHAMBER OF A QUASI-CONTINUOUS VOLUME SOURCE OF NEGATIVE IONS

FLASH CHAMBER OF A QUASI-CONTINUOUS VOLUME SOURCE OF NEGATIVE IONS FLASH CHAMBER OF A QUASI-CONTINUOUS VOLUME SOURCE OF NEGATIVE IONS P.A. Litvinov, V.A. Baturin * Institute of Applied Physics, National Academy of Science of Ukraine, 58 Petropavlovskaya St. Sumy, 40030

More information

Flow measurements in the Scrape-Off Layer of Alcator C-Mod using Impurity Plumes

Flow measurements in the Scrape-Off Layer of Alcator C-Mod using Impurity Plumes Flow measurements in the Scrape-Off Layer of Alcator C-Mod using Impurity Plumes S. Gangadhara,. Laombard M.I.T. Plasma Science and Fusion Center, 175 Albany St., Cambridge, MA 2139 USA Abstract Accurate

More information

Table of Content. Mechanical Removing Techniques. Ultrasonic Machining (USM) Sputtering and Focused Ion Beam Milling (FIB)

Table of Content. Mechanical Removing Techniques. Ultrasonic Machining (USM) Sputtering and Focused Ion Beam Milling (FIB) Table of Content Mechanical Removing Techniques Ultrasonic Machining (USM) Sputtering and Focused Ion Beam Milling (FIB) Ultrasonic Machining In ultrasonic machining (USM), also called ultrasonic grinding,

More information

Chapter 5: Nanoparticle Production from Cathode Sputtering. in High-Pressure Microhollow Cathode and Arc Discharges

Chapter 5: Nanoparticle Production from Cathode Sputtering. in High-Pressure Microhollow Cathode and Arc Discharges 96 Chapter 5: Nanoparticle Production from Cathode Sputtering in High-Pressure Microhollow Cathode and Arc Discharges 5.1. Introduction Sputtering is a fundamental aspect of plasma operation and has been

More information

Lecture 6 Plasmas. Chapters 10 &16 Wolf and Tauber. ECE611 / CHE611 Electronic Materials Processing Fall John Labram 1/68

Lecture 6 Plasmas. Chapters 10 &16 Wolf and Tauber. ECE611 / CHE611 Electronic Materials Processing Fall John Labram 1/68 Lecture 6 Plasmas Chapters 10 &16 Wolf and Tauber 1/68 Announcements Homework: Homework will be returned to you on Thursday (12 th October). Solutions will be also posted online on Thursday (12 th October)

More information

Low Temperature Plasma Technology Laboratory

Low Temperature Plasma Technology Laboratory Low Temperature Plasma Technology Laboratory CENTRAL PEAKING OF MAGNETIZED GAS DISCHARGES Francis F. Chen and Davide Curreli LTP-1210 Oct. 2012 Electrical Engineering Department Los Angeles, California

More information

Comparison of the B field dependency of plasma parameters of a weakly magnetized inductive and Helicon hydrogen discharge

Comparison of the B field dependency of plasma parameters of a weakly magnetized inductive and Helicon hydrogen discharge Comparison of the B field dependency of plasma parameters of a weakly magnetized inductive and Helicon hydrogen discharge S Briefi 1, P Gutmann 1, D Rauner 1,2 and U Fantz 1,2 1 AG Experimentelle Plasmaphysik,

More information

Earlier Lecture. In the earlier lecture, we have seen non metallic sensors like Silicon diode, Cernox and Ruthenium Oxide.

Earlier Lecture. In the earlier lecture, we have seen non metallic sensors like Silicon diode, Cernox and Ruthenium Oxide. 41 1 Earlier Lecture In the earlier lecture, we have seen non metallic sensors like Silicon diode, Cernox and Ruthenium Oxide. Silicon diodes have negligible i 2 R losses. Cernox RTDs offer high response

More information

SPECTRAL INVESTIGATION OF A COMPLEX SPACE CHARGE STRUCTURE IN PLASMA

SPECTRAL INVESTIGATION OF A COMPLEX SPACE CHARGE STRUCTURE IN PLASMA SPECTRAL INVESTIGATION OF A COMPLEX SPACE CHARGE STRUCTURE IN PLASMA S. GURLUI 1, D. G. DIMITRIU 1, C. IONITA 2, R. W. SCHRITTWIESER 2 1 Faculty of Physics, Al. I. Cuza University, 11 Carol I Blvd., RO-700506

More information

Introduction to Plasma

Introduction to Plasma What is a plasma? The fourth state of matter A partially ionized gas How is a plasma created? Energy must be added to a gas in the form of: Heat: Temperatures must be in excess of 4000 O C Radiation Electric

More information

Lecture 1: Vapour Growth Techniques

Lecture 1: Vapour Growth Techniques PH3EC2 Vapour Growth and Epitaxial Growth Lecturer: Dr. Shinoj V K Lecture 1: Vapour Growth Techniques 1.1 Vapour growth The growth of single crystal materials from the vapour phase. Deposition from the

More information

Dust collected in MAST and in Tore Supra. Nanoparticle growth in laboratory plasmas

Dust collected in MAST and in Tore Supra. Nanoparticle growth in laboratory plasmas FDR-FM Association EURATOM-EA Dust collected in MAST and in Tore Supra. Pardanaud 1,. Martin 1, P. Roubin 1,. Arnas 1 and G. De Temmerman 2 1 Lab. PIIM, NRS-Université de Provence, UMR 6633, 13397 Marseille,

More information

Nova 600 NanoLab Dual beam Focused Ion Beam IITKanpur

Nova 600 NanoLab Dual beam Focused Ion Beam IITKanpur Nova 600 NanoLab Dual beam Focused Ion Beam system @ IITKanpur Dual Beam Nova 600 Nano Lab From FEI company (Dual Beam = SEM + FIB) SEM: The Electron Beam for SEM Field Emission Electron Gun Energy : 500

More information

Carbon Deposition and Deuterium Inventory in ASDEX Upgrade

Carbon Deposition and Deuterium Inventory in ASDEX Upgrade 1 IAEA-CN-116 / EX / 5-24 Carbon Deposition and Deuterium Inventory in ASDEX Upgrade M. Mayer 1, V. Rohde 1, J. Likonen 2, E. Vainonen-Ahlgren 2, J. Chen 1, X. Gong 1, K. Krieger 1, ASDEX Upgrade Team

More information

Effect of Gas Flow Rate and Gas Composition in Ar/CH 4 Inductively Coupled Plasmas

Effect of Gas Flow Rate and Gas Composition in Ar/CH 4 Inductively Coupled Plasmas COMSOL CONFERENCE BOSTON 2011 Effect of Gas Flow Rate and Gas Composition in Ar/CH 4 Inductively Coupled Plasmas Keisoku Engineering System Co., Ltd., JAPAN Dr. Lizhu Tong October 14, 2011 1 Contents 1.

More information

ITER A/M/PMI Data Requirements and Management Strategy

ITER A/M/PMI Data Requirements and Management Strategy ITER A/M/PMI Data Requirements and Management Strategy Steven Lisgo, R. Barnsley, D. Campbell, A. Kukushkin, M. Hosokawa, R. A. Pitts, M. Shimada, J. Snipes, A. Winter ITER Organisation with contributions

More information

Table 1: Residence time (τ) in seconds for adsorbed molecules

Table 1: Residence time (τ) in seconds for adsorbed molecules 1 Surfaces We got our first hint of the importance of surface processes in the mass spectrum of a high vacuum environment. The spectrum was dominated by water and carbon monoxide, species that represent

More information

Multiscale modelling of D trapping in W

Multiscale modelling of D trapping in W CMS Multiscale modelling of D trapping in W Kalle Heinola, Tommy Ahlgren and Kai Nordlund Department of Physics and Helsinki Institute of Physics University of Helsinki, Finland Contents Background Plasma-wall

More information

Deuterium and fluorine radical reaction kinetics on photoresist*

Deuterium and fluorine radical reaction kinetics on photoresist* Deuterium and fluorine radical reaction kinetics on photoresist* Frank Greer, J. W. Coburn, and David B. Graves a) Department of Chemical Engineering, University of California, Berkeley, California 94720

More information

Chapter 7 Plasma Basic

Chapter 7 Plasma Basic Chapter 7 Plasma Basic Hong Xiao, Ph. D. hxiao89@hotmail.com www2.austin.cc.tx.us/hongxiao/book.htm Hong Xiao, Ph. D. www2.austin.cc.tx.us/hongxiao/book.htm 1 Objectives List at least three IC processes

More information

Sputter Ion Pump (Ion Pump) By Biswajit

Sputter Ion Pump (Ion Pump) By Biswajit Sputter Ion Pump (Ion Pump) By Biswajit 08-07-17 Sputter Ion Pump (Ion Pump) An ion pump is a type of vacuum pump capable of reaching pressures as low as 10 11 mbar under ideal conditions. An ion pump

More information

Thermal Treatment of Stainless Steel towards the Zero Outgassing Rate

Thermal Treatment of Stainless Steel towards the Zero Outgassing Rate Thermal Treatment of Stainless Steel towards the Zero Outgassing Rate Vincenc Nemanic, Institute of Surface Engineering and Optoelectronics, Teslova 30, 1000 Ljubljana, Slovenia vincenc.nemanic@guest.arnes.si

More information

Is plasma important? Influence molecule formation?

Is plasma important? Influence molecule formation? Is plasma important? Influence molecule formation? Plasma Structure (space & time) Influence? Daan Schram Eindhoven University of Technology d.c.schram@tue.nl http://www.tue.nl/en/employee/ep/e/d/ep-uid/19780797/?no_cache=1&chash=e23e831cf0c6bebeac6023f04dd3c4b6

More information

Film Deposition Part 1

Film Deposition Part 1 1 Film Deposition Part 1 Chapter 11 : Semiconductor Manufacturing Technology by M. Quirk & J. Serda Spring Semester 2013 Saroj Kumar Patra Semidonductor Manufacturing Technology, Norwegian University of

More information