SURFACE TENSION POWERED SELF-ASSEMBLY OF 3D MOEMS DEVICES USING DRIE OF BONDED SILICON-ON-INSULATOR WAFERS INTRODUCTION
|
|
- Jocelin Francis
- 5 years ago
- Views:
Transcription
1 SURFACE TENSION POWERED SELF-ASSEMBLY OF 3D MOEMS DEVICES USING DRIE OF BONDED SILICON-ON-INSULATOR WAFERS R.R.A Syms, C. Gormley and S. Blackstone Dept. of Electrical and Electronic Engineering, Imperial College, Exhibition Road, London, SW7 2BT BCO Technologies (NI) Ltd., 5 Hannahstown Hill, Belfast, BT17 OLT INTRODUCTION Surface tension powered self-assembly is a technique for mass parallel fabrication of 3D microelectro-mechanical systems (MEMS) from surface micromachined parts, which are rotated outof-plane by the surface tension of pads of a meltable material 1. Recently, we have demonstrated a simple two-mask process based on mechanical parts formed from 4 industry-standard bonded silicon-on-insulator (BSOI) wafers and meltable pads of thick photoresist, Hoechst AZ4562 2,3. Here, we describe enhancements obtained by deep reactive ion etching (DRIE) of the parts using an inductively coupled plasma (ICP), introduce improved hinge designs, and demonstrate a new range of self-assembling mechanisms. The process is first described, and the influence of critical fabrication steps such as lithography and etching on uniformity, yield and accuracy are discussed. Applications in micro-opto-electro-mechanical systems (MOEMS 4 ) are then demonstrated. FABRICATION PROCESS Figure 1 shows the process, which is based BSOI material fabricated at BCO and consisting of 4 (100) Si substrates carrying 5 µm thick bonded Si layers on 2 µm oxide. In previous work, parts have been formed in the bonded layer by conventional RIE using a Cr hard mask. Replacing this process with DRIE allows feature sizes to be reduced from ca 5 µm to 2 µm. This improvement in dimensional control increases the accuracy of the assembled structure. The use of a stop-onoxide etch increases uniformity and reduces the likelihood of failure by resist adhesion to the substrate.
2 To define the parts, the wafers were patterned by photolithography, using a Quintel Q4000-IR aligner. The surface pattern was then transferred to the bonded layer by deep reactive ion etching in a Surface Technology Systems Single-Chamber Multiplex ICP Etcher, using the BCO/STS Advanced Silicon Etch, a stop-on-oxide DRIE process. The resist mask was then stripped. The ASE process uses alternating cycles of ICP etching and passivation at ca 25 mtorr pressure to etch silicon to depths > 200 µm at high rates and with excellent sidewall verticality. In the etch step, sulphur hexafluoride is used to remove silicon by dissociating SF 6 into fluorine radicals. Although the etch process is isotropic, lateral erosion is prevented by a short polymer deposition step after each etch. This forms a layer of passivation (C x F y ) on the surface of the feature by ionisation and dissociation of octafluorocylcobutane (C 4 F 8 ). To re-initiate etching, fluorine radicals first etch the base of the passivation, and then the silicon itself. Although cyclic processing leads to sidewall scallops, these can be minimised by careful adjustment of the etch parameters. To form the meltable pads, the etched wafers were cleaned in fuming nitric acid to promote adhesion, spin-coated with Hoechst AZ4562 photoresist, pre-baked at 90 C, exposed using the Quintel aligner, and developed in Hoechst AZ400K developer (1 : 4 in DI water) for 6 minutes. A spin speed of 1400 rpm gave hinge driver pad thicknesses of 11.8 µm. To free the mechanical parts, the buried oxide was then removed by etching for 10 hours in 7 : 1 buffered HF, which penetrated through 4 µm square holes in the movable parts. To ensure adhesion of the resist pads during such a long etch, they were premelted at 100 C for 30 mins. Previous demonstrations have used freeze-drying in a water/methanol mixture to dry the structures without surface tension collapse. However, it has been found that most organic liquids (including cyclohexane, methanol, propan-1-ol, propan-2-ol, propylene carbonate etc.) either dissolve the resist pads or weaken their adhesion. The following alternative procedure was therefore employed. Samples were simply placed faced-down in open dishes containing ultrapure distilled water, frozen solid, and then freeze-dried in an Edwards Modulyo freeze-drier. The
3 dryer was then vented to dry N 2 while warming the substrates to avoid surface tension collapse caused by condensate. Assembly of the structure into its final three-dimensional configuration was carried out by melting in a convection oven for 6 minutes at 145 C. To improve reflectivity and provide electrical connection across the insulating resist pads, devices were then sputter-coated with Au metal. PROCESS AND DESIGN IMPROVEMENTS Previous demonstrations of resist-powered self-assembly have suffered from low yield, caused by a) detachment of the movable parts, b) stick-down, and c) poorly-controlled rotation rates. We have found that the former problem may be substantially eliminated by perforating the silicon lands on either side of the hinge, so that the resist is effectively pinned to the surface of both parts as shown in Figure 2a. Stick-down of structures with component sizes of order 1 mm may be prevented by careful control of the release step, as discussed. Rotation rates may be controlled by improving pad-to-pad uniformity. This is achieved by ensuring that the etched Si surface contains few open areas, so that the resist spin-coating process may accurately planarize the surface. 3D MOEMS components have previously been based on parts rotated 45 out-of-plane. Rotation is powered by melting the resist pads, and the geometry of the assembly is fixed by a mechanical limiter. Figure 2b shows the mechanism used, which involves simultaneous rotation of two parts in opposite directions. Catches on the parts engage to prevent further rotation when each has rotated through 45. The accuracy of the mechanism is high, because it involves a long lever arm, and because the construction is determined by the geometric layout of the parts. However, it is relatively bulky, and is therefore suitable mainly for assembly of major component frames. Simpler mechanisms can be used to set the final angles of smaller components. Figure 2c shows a limiter based on two cranks attached to the moving part close to the hinge. The cranks prevent
4 further motion after they have reached the substrate. The accuracy of this mechanism is low, because the lever arm is now very short, and because the construction is determined by layer thicknesses in addition to geometric layout. However, it is sufficient for subcomponent assembly. 3D MOEMS COMPONENTS The improvements described above have increased the yield of self-assembled 3D structures from ca 5% to ca 70%, and allowed the construction of more sophisticated MOEMS devices. In particular, improved adhesion of mechanical parts has allowed the span of 45 micromirrors to be increased to 1 mm (Figure 3). Similarly, improvements in the definition of the parts has allowed the angular error of 45 rotated structures to be reduced to ca ± 4 and the finger gap in comb drive electrodes to be reduced 2 µm. Torsion mirror scannners have previously been demonstrated by polysilicon surface micromachining, using electrostatic 5,6 and electrothermal 7 drives. In each case, an indirect drive was used, in which the mirror was driven by an actuator on the substrate via a hinged link. Direct actuation, which allows high-q operation, has been demonstrated by surface tension selfassembly, using a skewed electrostatic drive 3. However, the skewed electrode layout resulted in a high drive voltage, because of the weak electrostatic field. Furthermore, because the fixed electrodes lay between the moving electrodes and the substrate, there was a trade-off between the drive voltage and maximum scan angle; reducing the drive voltage by extending the moving electrodes restricts the angle through which the mirror can rotate before it strikes the substrate. These limitations have been overcome by rotating the fixed drive electrodes out-of-plane by an additional self-assembly operation, using the below-substrate limiter of Figure 2c to set their final angle. Repositioning the fixed electrodes also allows the construction of electrostaticallydriven mirror scanners with different rotation axes, as shown in Figure 4. These may be driven directly through a wide angle without the electrodes clashing, and also have high Q-factors.
5 Time-sequential surface tension self-assembly allows the demonstration of 90 rotated structures. The limiter mechanism of Figure 2b is first used to construct a stop in mid air above the substrate, which then prevents further rotation of an additional component when it has rotated through 90. These structures may act as fixed mirrors; however, they may also carry other optical components. For example, Figure 5 shows arrays of 80 µm diameter refractive microlenses, which have been formed by reflow molding of photoresist 8 without introducing any additional process complexity. CONCLUSIONS We have shown that the use of deep reactive ion etching and improved design allows a substantial increase in the yield and complexity of surface tension self-assembled 3D MOEMS components. REFERENCES 1. Syms R.R.A., Yeatman E.M. "Self-assembly of fully three-dimensional microstructures using rotation by surface tension forces" Elect. Lett. 29, (1993) 2. Syms R.R.A., Blackstone S. 3-D self-assembly of optomechanical structures using bonded SOI 1999 Annual Meeting of the Electrochemical Society, Honolulu, Hawaii, Oct , paper 1026 (1999) 3. Syms R.R.A. Surface tension powered self-assembly of 3-D micro-optomechanical structures IEEE/ASME J. Microelectromech. Syst. 8, (1999) 4. Wu M.C., Lin L.-Y., Lee S.-S., Pister K.S.J. "Micromachined free-space integrated micro-optics" Sensors and Actuators A50, (1995) 5. Tien N.C., Solgaard O., Kiang M.H., Daneman M., Lau K.Y., Muller R.S. "Surface micromachined mirrors for laser-beam positioning" Sensors and Actuators A52, (1996) 6. Kiang M.-H., Solgaard O., Muller R.S., Lau K.Y. Micromachined polysilicon microscanners for barcode readers IEEE Photon. Tech. Lett. 8, (1996) 7. Butler J.T., Bright V.M., Reid J.R. Scanning and rotating micromirrors using thermal actuators Proc. SPIE 3131, (1997) 8. King C.R., Lin L.Y., Wu M.C. Out-of-plane refractive microlens fabricated by surface micromachining IEEE Photon. Tech. Lett. 8, (1996)
6 BSOI wafer Etch oxide Pattern; DRIE bonded layer Freeze dry Spin-coat resist Pattern resist Silicon Thermal oxide Photoresist Premelt resist Figure 1. Melt resist Fabrication process for surface tension powered 3D microstructure self-assembly. Fixed land Hinge driver Moving part Fixed land Latch #1 Fixed land Crank Moving part Hinge driver Latch #2 Keying Buried oxide Resist Bonded layer Latch #1 Latch #2 Substrate Figure 2. a) Keyed hinges; b) above and c) below substrate latches for 45 rotated structures.
7 Figure 3. 1 mm x 1 mm self-assembled 45 mirror, showing detail of mechanical limiter. Figure 4. Self-assembled torsion mirror scanner with self-assembled drive electrodes. Figure 5. Self assembled 90 rotated structure carrying reflow molded collimating lenses.
MICROSTRUCTURE self-assembly is becoming known
448 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 8, NO. 4, DECEMBER 1999 Surface Tension Powered Self-Assembly of 3-D Micro-Optomechanical Structures Richard R. A. Syms, Member, IEEE Abstract A new
More informationStability of surface tension self-assembled 3D MOEMS
Sensors and Actuators A 127 (2006) 381 391 Stability of surface tension self-assembled 3D MOEMS Y.K. Hong, R.R.A. Syms Optical and Semiconductor Devices Group, Electrical and Electronic Engineering Department,
More informationDesign of Electrostatic Actuators for MOEMS Applications
Design of Electrostatic Actuators for MOEMS Applications Dooyoung Hah 1,, Hiroshi Toshiyoshi 1,3, and Ming C. Wu 1 1 Department of Electrical Engineering, University of California, Los Angeles Box 951594,
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2007
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 12: Mechanics
More informationRegents of the University of California
Deep Reactive-Ion Etching (DRIE) DRIE Issues: Etch Rate Variance The Bosch process: Inductively-coupled plasma Etch Rate: 1.5-4 μm/min Two main cycles in the etch: Etch cycle (5-15 s): SF 6 (SF x+ ) etches
More informationEtching Issues - Anisotropy. Dry Etching. Dry Etching Overview. Etching Issues - Selectivity
Etching Issues - Anisotropy Dry Etching Dr. Bruce K. Gale Fundamentals of Micromachining BIOEN 6421 EL EN 5221 and 6221 ME EN 5960 and 6960 Isotropic etchants etch at the same rate in every direction mask
More informationSolder Self-assembly for MEMS
Solder Self-assembly for MEMS Kevin F. Harsh, Ronda S. Irwin and Y. C. Lee NSF Center for Advanced Manufacturing and Packaging of Microwave, Optical and Digital Electronics, Department of Mechanical Engineering
More informationEtching: Basic Terminology
Lecture 7 Etching Etching: Basic Terminology Introduction : Etching of thin films and sometimes the silicon substrate are very common process steps. Usually selectivity, and directionality are the first
More informationELECTROSTATIC combdrives have been widely used for
472 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 25, NO. 2, FEBRUARY 2007 Dynamic Response Modeling of MEMS Micromirror Corner Cube Reflectors With Angular Vertical Combdrives Young Ki Hong and Richard R. A.
More informationUNIT 3. By: Ajay Kumar Gautam Asst. Prof. Dev Bhoomi Institute of Technology & Engineering, Dehradun
UNIT 3 By: Ajay Kumar Gautam Asst. Prof. Dev Bhoomi Institute of Technology & Engineering, Dehradun 1 Syllabus Lithography: photolithography and pattern transfer, Optical and non optical lithography, electron,
More informationETCHING Chapter 10. Mask. Photoresist
ETCHING Chapter 10 Mask Light Deposited Substrate Photoresist Etch mask deposition Photoresist application Exposure Development Etching Resist removal Etching of thin films and sometimes the silicon substrate
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2007
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 11: Bulk
More informationSUPPLEMENTARY INFORMATION
In the format provided by the authors and unedited. DOI: 10.1038/NPHOTON.2016.254 Measurement of non-monotonic Casimir forces between silicon nanostructures Supplementary information L. Tang 1, M. Wang
More informationFree-Space MEMS Tunable Optical Filter in (110) Silicon
Free-Space MEMS Tunable Optical Filter in (110) Silicon Ariel Lipson & Eric M. Yeatman Optical & Semiconductor Group Outline Device - Optical Filter Optical analysis Fabrication Schematic Fabricated 2
More informationDeformable MEMS grating for wide tunability and high operating speed
Deformable MEMS grating for wide tunability and high operating speed Maurizio Tormen (1), Yves-Alain Peter (2), Philippe Niedermann (1), Arno Hoogerwerf (1), Herbert Shea (3) and Ross Stanley (1) 1 Centre
More informationDry Etching Zheng Yang ERF 3017, MW 5:15-6:00 pm
Dry Etching Zheng Yang ERF 3017, email: yangzhen@uic.edu, MW 5:15-6:00 pm Page 1 Page 2 Dry Etching Why dry etching? - WE is limited to pattern sizes above 3mm - WE is isotropic causing underetching -
More informationY. C. Lee. Micro-Scale Engineering I Microelectromechanical Systems (MEMS)
Micro-Scale Engineering I Microelectromechanical Systems (MEMS) Y. C. Lee Department of Mechanical Engineering University of Colorado Boulder, CO 80309-0427 leeyc@colorado.edu January 15, 2014 1 Contents
More informationOptical MEMS in Bonded Silicon on Insulator
Optical MEMS in Bonded Silicon on Insulator Richard R. A. Syms OSD Group, EEE Dept., Imperial College London, Exhibition Road, London, SW7 2BT, UK Email r.syms@ic.ac.uk; phone +44 207 594 6203; fax +44
More information4FNJDPOEVDUPS 'BCSJDBUJPO &UDI
2010.5.4 1 Major Fabrication Steps in CMOS Process Flow UV light oxygen Silicon dioxide Silicon substrate Oxidation (Field oxide) photoresist Photoresist Coating Mask exposed photoresist Mask-Wafer Exposed
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 21: Gyros
More information2.76/2.760 Multiscale Systems Design & Manufacturing
2.76/2.760 Multiscale Systems Design & Manufacturing Fall 2004 MOEMS Devices for Optical communications system Switches and micromirror for Add/drops Diagrams removed for copyright reasons. MOEMS MEMS
More informationMicro Capacitive Tilt Sensor for Human Body Movement Detection
Micro Capacitive Tilt Sensor for Human Body Movement Detection L. Zhao, E. M. Yeatman Optical and Semiconductor Devices Group, Department of Electrical & Electronic Engineering Imperial College London,
More informationPlatform Isolation Using Out-of-plane Compliant Mechanism
Platform Isolation Using Out-of-plane Compliant Mechanism by Arpys Arevalo PhD Candidate in Electrical Engineering Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) King Abdullah University
More informationSimulation of a Micro-Scale Out-of-plane Compliant Mechanism
Simulation of a Micro-Scale Out-of-plane Compliant Mechanism by Arpys Arevalo PhD Candidate in Electrical Engineering Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) King Abdullah
More informationA THERMAL ACTUATOR DESIGN USING TORSIONAL LOADING TO ACHIEVE OUT-OF-PLANE MOTION AND FORCE TRANSMISSION
A THERMAL ACTUATOR DESIGN USING TORSIONAL LOADING TO ACHIEVE OUT-OF-PLANE MOTION AND FORCE TRANSMISSION Anargyros Panayotopoulos MEMS Division, Mechanical Engineering Dept. University of California, Berkeley,
More informationSURFACE TENSION SELF-ASSEMBLY FOR THREE DIMENSIONAL MICRO-OPTO-ELECTRO-MECHANICAL SYSTEMS
SURFACE TENSION SELF-ASSEMBLY FOR THREE DIMENSIONAL MICRO-OPTO-ELECTRO-MECHANICAL SYSTEMS Researcher: Young Ki Hong Supervisor: Richard R. A. Syms Optical and Semiconductor Device Group Department of Electrical
More informationEE C245 / ME C218 INTRODUCTION TO MEMS DESIGN FALL 2009 PROBLEM SET #7. Due (at 7 p.m.): Thursday, Dec. 10, 2009, in the EE C245 HW box in 240 Cory.
Issued: Thursday, Nov. 24, 2009 PROBLEM SET #7 Due (at 7 p.m.): Thursday, Dec. 10, 2009, in the EE C245 HW box in 240 Cory. 1. Gyroscopes are inertial sensors that measure rotation rate, which is an extremely
More informationSupplementary Information Our InGaN/GaN multiple quantum wells (MQWs) based one-dimensional (1D) grating structures
Polarized white light from hybrid organic/iii-nitrides grating structures M. Athanasiou, R. M. Smith, S. Ghataora and T. Wang* Department of Electronic and Electrical Engineering, University of Sheffield,
More information1. Narrative Overview Questions
Homework 4 Due Nov. 16, 010 Required Reading: Text and Lecture Slides on Downloadable from Course WEB site: http://courses.washington.edu/overney/nme498.html 1. Narrative Overview Questions Question 1
More informationCarrier Transport by Diffusion
Carrier Transport by Diffusion Holes diffuse ÒdownÓ the concentration gradient and carry a positive charge --> hole diffusion current has the opposite sign to the gradient in hole concentration dp/dx p(x)
More informationEE 527 MICROFABRICATION. Lecture 24 Tai-Chang Chen University of Washington
EE 527 MICROFABRICATION Lecture 24 Tai-Chang Chen University of Washington EDP ETCHING OF SILICON - 1 Ethylene Diamine Pyrocatechol Anisotropy: (100):(111) ~ 35:1 EDP is very corrosive, very carcinogenic,
More informationFigure 1: Graphene release, transfer and stacking processes. The graphene stacking began with CVD
Supplementary figure 1 Graphene Growth and Transfer Graphene PMMA FeCl 3 DI water Copper foil CVD growth Back side etch PMMA coating Copper etch in 0.25M FeCl 3 DI water rinse 1 st transfer DI water 1:10
More informationEE 527 MICROFABRICATION. Lecture 25 Tai-Chang Chen University of Washington
EE 527 MICROFABRICATION Lecture 25 Tai-Chang Chen University of Washington ION MILLING SYSTEM Kaufmann source Use e-beam to strike plasma A magnetic field applied to increase ion density Drawback Low etch
More informationUNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Fall Exam 1
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 143 Fall 2008 Exam 1 Professor Ali Javey Answer Key Name: SID: 1337 Closed book. One sheet
More informationTop down and bottom up fabrication
Lecture 24 Top down and bottom up fabrication Lithography ( lithos stone / graphein to write) City of words lithograph h (Vito Acconci, 1999) 1930 s lithography press Photolithography d 2( NA) NA=numerical
More informationIC Fabrication Technology
IC Fabrication Technology * History: 1958-59: J. Kilby, Texas Instruments and R. Noyce, Fairchild * Key Idea: batch fabrication of electronic circuits n entire circuit, say 10 7 transistors and 5 levels
More informationIntroduction to Photolithography
http://www.ichaus.de/news/72 Introduction to Photolithography Photolithography The following slides present an outline of the process by which integrated circuits are made, of which photolithography is
More informationLecture 0: Introduction
Lecture 0: Introduction Introduction q Integrated circuits: many transistors on one chip q Very Large Scale Integration (VLSI): bucketloads! q Complementary Metal Oxide Semiconductor Fast, cheap, low power
More informationDESIGN, FABRICATION, AND CHARACTERIZATION OF ELECTROSTATICALLY- ACTUATED SILICON MICRO-MIRRORS
DESIGN, FABRICATION, AND CHARACTERIZATION OF ELECTROSTATICALLY- ACTUATED SILICON MICRO-MIRRORS A Thesis presented to the Faculty of California Polytechnic State University, San Luis Obispo In Partial Fulfillment
More informationSINGLE-STEP ASSEMBLY OF COMPLEX 3-D MICROSTRUCTURES
SINGLE-STEP ASSEMBLY OF COMPLEX 3-D MICROSTRUCTURES Elliot E. Hui, Roger T. Howe, and M. Steven Rodgers* Berkeley Sensor & Actuator Center, University of California, Berkeley, CA 94720-1774, USA *Intelligent
More informationLithography and Etching
Lithography and Etching Victor Ovchinnikov Chapters 8.1, 8.4, 9, 11 Previous lecture Microdevices Main processes: Thin film deposition Patterning (lithography) Doping Materials: Single crystal (monocrystal)
More informationIntegrating MEMS Electro-Static Driven Micro-Probe and Laser Doppler Vibrometer for Non-Contact Vibration Mode SPM System Design
Tamkang Journal of Science and Engineering, Vol. 12, No. 4, pp. 399 407 (2009) 399 Integrating MEMS Electro-Static Driven Micro-Probe and Laser Doppler Vibrometer for Non-Contact Vibration Mode SPM System
More informationWet and Dry Etching. Theory
Wet and Dry Etching Theory 1. Introduction Etching techniques are commonly used in the fabrication processes of semiconductor devices to remove selected layers for the purposes of pattern transfer, wafer
More informationEECS C245 ME C218 Midterm Exam
University of California at Berkeley College of Engineering EECS C245 ME C218 Midterm Eam Fall 2003 Prof. Roger T. Howe October 15, 2003 Dr. Thara Srinivasan Guidelines Your name: SOLUTIONS Circle your
More informationLecture 18: Microfluidic MEMS, Applications
MECH 466 Microelectromechanical Systems University of Victoria Dept. of Mechanical Engineering Lecture 18: Microfluidic MEMS, Applications 1 Overview Microfluidic Electrokinetic Flow Basic Microfluidic
More informationEE 143 MICROFABRICATION TECHNOLOGY FALL 2014 C. Nguyen PROBLEM SET #7. Due: Friday, Oct. 24, 2014, 8:00 a.m. in the EE 143 homework box near 140 Cory
Issued: Tuesday, Oct. 14, 2014 PROBLEM SET #7 Due: Friday, Oct. 24, 2014, 8:00 a.m. in the EE 143 homework box near 140 Cory Electroplating 1. Suppose you want to fabricate MEMS clamped-clamped beam structures
More informationb. The displacement of the mass due to a constant acceleration a is x=
EE147/247A Final, Fall 2013 Page 1 /35 2 /55 NO CALCULATORS, CELL PHONES, or other electronics allowed. Show your work, and put final answers in the boxes provided. Use proper units in all answers. 1.
More informationPattern Transfer- photolithography
Pattern Transfer- photolithography DUV : EUV : 13 nm 248 (KrF), 193 (ArF), 157 (F 2 )nm H line: 400 nm I line: 365 nm G line: 436 nm Wavelength (nm) High pressure Hg arc lamp emission Ref: Campbell: 7
More informationProceedings Silicon Sacrificial Layer Technology for the Production of 3D MEMS (EPyC Process)
Proceedings Silicon Sacrificial Layer Technology for the Production of 3D MEMS (EPyC Process) Latifa Louriki 1, *, Peter Staffeld 1, Arnd Kaelberer 1 and Thomas Otto 2 1 Robert Bosch GmbH, Reutlingen D-72762,
More informationE SC 412 Nanotechnology: Materials, Infrastructure, and Safety Wook Jun Nam
E SC 412 Nanotechnology: Materials, Infrastructure, and Safety Wook Jun Nam Lecture 10 Outline 1. Wet Etching/Vapor Phase Etching 2. Dry Etching DC/RF Plasma Plasma Reactors Materials/Gases Etching Parameters
More informationSupplementary information for
Supplementary information for Transverse electric field dragging of DNA in a nanochannel Makusu Tsutsui, Yuhui He, Masayuki Furuhashi, Rahong Sakon, Masateru Taniguchi & Tomoji Kawai The Supplementary
More information2D BEAM STEERING USING ELECTROSTATIC AND THERMAL ACTUATION FOR NETWORKED CONTROL ABSTRACT
D BEAM STEERING USING ELECTROSTATIC AND THERMAL ACTUATION FOR NETWORKED CONTROL Jitendra Makwana 1, Stephen Phillips 1, Lifeng Wang 1, Nathan Wedge, and Vincenzo Liberatore 1 Department of Electrical Engineering,
More informationLECTURE 5 SUMMARY OF KEY IDEAS
LECTURE 5 SUMMARY OF KEY IDEAS Etching is a processing step following lithography: it transfers a circuit image from the photoresist to materials form which devices are made or to hard masking or sacrificial
More informationEtching Capabilities at Harvard CNS. March 2008
Etching Capabilities at Harvard CNS March 2008 CNS: A shared use facility for the Harvard Community and New England CNS Provides technical support, equipment and staff. Explicitly multi-disciplinary w/
More informationA Pendulous Oscillating Gyroscopic Accelerometer Fabricated Using Deep-Reactive Ion Etching
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 1, FEBRUARY 2003 21 A Pendulous Oscillating Gyroscopic Accelerometer Fabricated Using Deep-Reactive Ion Etching Todd J. Kaiser, Member, IEEE, and
More informationMEMS Tuning-Fork Gyroscope Mid-Term Report Amanda Bristow Travis Barton Stephen Nary
MEMS Tuning-Fork Gyroscope Mid-Term Report Amanda Bristow Travis Barton Stephen Nary Abstract MEMS based gyroscopes have gained in popularity for use as rotation rate sensors in commercial products like
More informationThe Stanford Nanofabrication Facility. Etch Area Overview. May 21, 2013
The Stanford Nanofabrication Facility Etch Area Overview May 21, 2013 High Density Plasma Systems Etcher Materials Etched Gases available Wafer Size Applied Materials P5000 MRIE ChA Applied Materials P5000
More informationNanostructures Fabrication Methods
Nanostructures Fabrication Methods bottom-up methods ( atom by atom ) In the bottom-up approach, atoms, molecules and even nanoparticles themselves can be used as the building blocks for the creation of
More informationEFFECT OF OXYGEN ADDITION ON SIDEWALLS OF SILICON SQUARE MICRO-PIT ARRAYS USING SF 6 BASED REACTIVE ION ETCHING
EFFECT OF OXYGEN ADDITION ON SIDEWALLS OF SILICON SQUARE MICRO-PIT ARRAYS USING SF 6 BASED REACTIVE ION ETCHING Maryam Alsadat Rad* and Kamarulazizi Ibrahim Nano Optoelectronics Research & Technology Lab,
More informationRECENTLY, there has been increasing interest in vertical
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 10, NO. 3, MAY/JUNE 2004 505 Theory and Experiments of Angular Vertical Comb-Drive Actuators for Scanning Micromirrors Dooyoung Hah, Pamela
More informationSupplementary Figure 1 Detailed illustration on the fabrication process of templatestripped
Supplementary Figure 1 Detailed illustration on the fabrication process of templatestripped gold substrate. (a) Spin coating of hydrogen silsesquioxane (HSQ) resist onto the silicon substrate with a thickness
More informationIN RECENT years, microelectromechanical systems
406 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 13, NO. 3, JUNE 2004 Angular Vertical Comb-Driven Tunable Capacitor With High-Tuning Capabilities Hung D. Nguyen, Student Member, IEEE, Dooyoung Hah,
More informationIntroduction to Microeletromechanical Systems (MEMS) Lecture 9 Topics. MEMS Overview
Introduction to Microeletromechanical Systems (MEMS) Lecture 9 Topics MicroOptoElectroMechanical Systems (MOEMS) Grating Light Valves Corner Cube Reflector (CCR) MEMS Light Modulator Optical Switch Micromirrors
More informationInstitute for Electron Microscopy and Nanoanalysis Graz Centre for Electron Microscopy
Institute for Electron Microscopy and Nanoanalysis Graz Centre for Electron Microscopy Micromechanics Ass.Prof. Priv.-Doz. DI Dr. Harald Plank a,b a Institute of Electron Microscopy and Nanoanalysis, Graz
More informationPhotolithography 光刻 Part II: Photoresists
微纳光电子材料与器件工艺原理 Photolithography 光刻 Part II: Photoresists Xing Sheng 盛兴 Department of Electronic Engineering Tsinghua University xingsheng@tsinghua.edu.cn 1 Photolithography 光刻胶 负胶 正胶 4 Photolithography
More informationCHAPTER 6: Etching. Chapter 6 1
Chapter 6 1 CHAPTER 6: Etching Different etching processes are selected depending upon the particular material to be removed. As shown in Figure 6.1, wet chemical processes result in isotropic etching
More informationMODELING OF T-SHAPED MICROCANTILEVER RESONATORS. Margarita Narducci, Eduard Figueras, Isabel Gràcia, Luis Fonseca, Joaquin Santander, Carles Cané
Stresa, Italy, 5-7 April 007 MODELING OF T-SHAPED MICROCANTILEVER RESONATORS Margarita Narducci, Eduard Figueras, Isabel Gràcia, Luis Fonseca, Joaquin Santander, Carles Centro Nacional de Microelectrónica
More informationCHARACTERIZATION OF DEEP REACTIVE ION ETCHING (DRIE) PROCESS FOR ELECTRICAL THROUGH-WAFER INTERCONNECTS FOR PIEZORESISTIVE INERTIAL SENSORS
CHARACTERIZATION OF DEEP REACTIVE ION ETCHING (DRIE) PROCESS FOR ELECTRICAL THROUGH-WAFER INTERCONNECTS FOR PIEZORESISTIVE INERTIAL SENSORS Maria Suggs, Physics Major, Southern Polytechnic State University
More informationDevice Fabrication: Etch
Device Fabrication: Etch 1 Objectives Upon finishing this course, you should able to: Familiar with etch terminology Compare wet and dry etch processes processing and list the main dry etch etchants Become
More informationIntroduction. Photoresist : Type: Structure:
Photoresist SEM images of the morphologies of meso structures and nanopatterns on (a) a positively nanopatterned silicon mold, and (b) a negatively nanopatterned silicon mold. Introduction Photoresist
More informationTool- and pattern-dependent spatial variations in silicon deep reactive ion etching
Tool- and pattern-dependent spatial variations in silicon deep reactive ion etching Hayden Taylor Microsystems Technology Laboratories Massachusetts Institute of Technology 12 May 2006 Coping with spatial
More informationLecture 14 Advanced Photolithography
Lecture 14 Advanced Photolithography Chapter 14 Wolf and Tauber 1/74 Announcements Term Paper: You are expected to produce a 4-5 page term paper on a selected topic (from a list). Term paper contributes
More informationDesign and Optimization of Piezoelectric Dual-Mode Micro-Mirror
Design and Optimization of Piezoelectric Dual-Mode Micro-Mirror Jichao Zhong, Xingguo Xiong, Zheng Yao, Junling Hu*, Prabir Patra* Department of Electrical and Computer Engineering, *Department of Mechanical
More informationTolerance analysis for comb-drive actuator using DRIE fabrication
Sensors and Actuators A 125 2006) 494 503 Tolerance analysis for comb-drive actuator using DRIE fabrication J. Li a,1, A.Q. Liu a,, Q.X. Zhang b a School of Electrical & Electronic Engineering, Nanyang
More informationFabrication and performance of d 33 -mode lead-zirconate-titanate (PZT) MEMS accelerometers
Fabrication and performance of d 33 -mode lead-zirconate-titanate (PZT) MEMS accelerometers H. G. Yu, R. Wolf*,K. Deng +,L.Zou +, S. Tadigadapa and S. Trolier-McKinstry* Department of Electrical Engineering,
More informationSUPPLEMENTARY FIGURES
SUPPLEMENTARY FIGURES a b c Supplementary Figure 1 Fabrication of the near-field radiative heat transfer device. a, Main fabrication steps for the bottom Si substrate. b, Main fabrication steps for the
More informationSUPPLEMENTARY NOTES Supplementary Note 1: Fabrication of Scanning Thermal Microscopy Probes
SUPPLEMENTARY NOTES Supplementary Note 1: Fabrication of Scanning Thermal Microscopy Probes Fabrication of the scanning thermal microscopy (SThM) probes is summarized in Supplementary Fig. 1 and proceeds
More informationEE C247B / ME C218 INTRODUCTION TO MEMS DESIGN SPRING 2016 C. NGUYEN PROBLEM SET #4
Issued: Wednesday, March 4, 2016 PROBLEM SET #4 Due: Monday, March 14, 2016, 8:00 a.m. in the EE C247B homework box near 125 Cory. 1. This problem considers bending of a simple cantilever and several methods
More informationAdvances in Back-side Via Etching of SiC for GaN Device Applications
Advances in Back-side Via Etching of SiC for GaN Device Applications Anthony Barker, Kevin Riddell, Huma Ashraf & Dave Thomas SPTS Technologies, Ringland Way, Newport NP18 2TA, UK, dave.thomas@spts.com,
More information10 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 6, NO. 1, MARCH 1997
10 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 6, NO. 1, MARCH 1997 Scratch Drive Actuator with Mechanical Links for Self-Assembly of Three-Dimensional MEMS Terunobu Akiyama, Dominique Collard, and
More informationMSN551 LITHOGRAPHY II
MSN551 Introduction to Micro and Nano Fabrication LITHOGRAPHY II E-Beam, Focused Ion Beam and Soft Lithography Why need electron beam lithography? Smaller features are required By electronics industry:
More informationLecture 6 Plasmas. Chapters 10 &16 Wolf and Tauber. ECE611 / CHE611 Electronic Materials Processing Fall John Labram 1/68
Lecture 6 Plasmas Chapters 10 &16 Wolf and Tauber 1/68 Announcements Homework: Homework will be returned to you on Thursday (12 th October). Solutions will be also posted online on Thursday (12 th October)
More informationMater. Res. Soc. Symp. Proc. Vol Materials Research Society
Mater. Res. Soc. Symp. Proc. Vol. 1258 2010 Materials Research Society 1258-Q14-02 Realization of silicon nanopillar arrays with controllable sidewall profiles by holography lithography and a novel single-step
More informationDQN Positive Photoresist
UNIVESITY OF CALIFONIA, BEKELEY BEKELEY DAVIS IVINE LOS ANGELES IVESIDE SAN DIEGO SAN FANCISCO SANTA BABAA SANTA CUZ DEPATMENT OF BIOENGINEEING 94720-1762 BioE 121 Midterm #1 Solutions BEKELEY, CALIFONIA
More informationDielectric Meta-Reflectarray for Broadband Linear Polarization Conversion and Optical Vortex Generation
Supporting Information Dielectric Meta-Reflectarray for Broadband Linear Polarization Conversion and Optical Vortex Generation Yuanmu Yang, Wenyi Wang, Parikshit Moitra, Ivan I. Kravchenko, Dayrl P. Briggs,
More informationFabrication Technology, Part I
EEL5225: Principles of MEMS Transducers (Fall 2004) Fabrication Technology, Part I Agenda: Microfabrication Overview Basic semiconductor devices Materials Key processes Oxidation Thin-film Deposition Reading:
More informationPlasma Chemistry Study in an Inductively Coupled Dielectric Etcher
Plasma Chemistry Study in an Inductively Coupled Dielectric Etcher Chunshi Cui, John Trow, Ken Collins, Betty Tang, Luke Zhang, Steve Shannon, and Yan Ye Applied Materials, Inc. October 26, 2000 10/28/2008
More informationCitation Bram Lips, Robert Puers, (2016), Three step deep reactive ion etch for high density trench etching Journal of Physics: Conference Series, 757, 012005. Archived version Author manuscript: the content
More informationTemporary Wafer Bonding - Key Technology for 3D-MEMS Integration
Temporary Wafer Bonding - Key Technology for 3D-MEMS Integration 2016-06-15, Chemnitz Chemnitz University of Technology Basic Research Fraunhofer ENAS System-Packaging (SP) Back-End of Line (BEOL) Applied
More informationAnalyses of LiNbO 3 wafer surface etched by ECR plasma of CHF 3 & CF 4
1998 DRY PROCESS SYMPOSIUM VI - 3 Analyses of LiNbO 3 wafer surface etched by ECR plasma of CHF 3 & CF 4 Naoki Mitsugi, Kaori Shima, Masumi Ishizuka and Hirotoshi Nagata New Technology Research Laboratories,
More informationFast Bonding of Substrates for the Formation of Microfluidic Channels at Room Temperature
Supplementary Material (ESI) for Lab on a Chip This journal is The Royal Society of Chemistry 2005 Supporting Information Fast Bonding of Substrates for the Formation of Microfluidic Channels at Room Temperature
More informationDevelopment and Characterization of High Frequency Bulk Mode Resonators
Excerpt from the Proceedings of the COMSOL Conference 008 Hannover Development and Characterization of High Frequency Bulk Mode Resonators Hossein Pakdast 1*, Zachary James Davis 1 1 DTU Nanotech, Technical
More informationWafer Charging in Process Equipment and its Relationship to GMR Heads Charging Damage
Wafer Charging in Process Equipment and its Relationship to GMR Heads Charging Damage Wes Lukaszek Wafer Charging Monitors, Inc. 127 Marine Road, Woodside, CA 94062 tel.: (650) 851-9313, fax.: (650) 851-2252,
More informationOptimization of Process Parameters for Micropart Capillary Assembly with Precision Positioning
Optimization of Process Parameters for Micropart Capillary Assembly with Precision Positioning Andrew X. Zhou, 1 Shaghayegh Abbasi, 2 Rajashree Baskaran, 2 Karl F. Böhringer 2 1 Department of Bioengineering,
More informationSection 3: Etching. Jaeger Chapter 2 Reader
Section 3: Etching Jaeger Chapter 2 Reader Etch rate Etch Process - Figures of Merit Etch rate uniformity Selectivity Anisotropy d m Bias and anisotropy etching mask h f substrate d f d m substrate d f
More informationNova 600 NanoLab Dual beam Focused Ion Beam IITKanpur
Nova 600 NanoLab Dual beam Focused Ion Beam system @ IITKanpur Dual Beam Nova 600 Nano Lab From FEI company (Dual Beam = SEM + FIB) SEM: The Electron Beam for SEM Field Emission Electron Gun Energy : 500
More informationLecture 15 Etching. Chapters 15 & 16 Wolf and Tauber. ECE611 / CHE611 Electronic Materials Processing Fall John Labram 1/76
Lecture 15 Etching Chapters 15 & 16 Wolf and Tauber 1/76 Announcements Term Paper: You are expected to produce a 4-5 page term paper on a selected topic (from a list). Term paper contributes 25% of course
More informationHSG-IMIT Application AG
B4.1 Acceleration Sensors IP-Blocks for MEMS Foundry Surface Micromachining Process R. Knechtel, S. Dempwolf S. Hering X-FAB Semiconductor Foundries AG Haarberstraße 67 99097 Erfurt / Germany T. Link J.
More informationA Novel Self-aligned and Maskless Process for Formation of Highly Uniform Arrays of Nanoholes and Nanopillars
Nanoscale Res Lett (2008) 3: 127 DOI 10.1007/s11671-008-9124-6 NANO EXPRESS A Novel Self-aligned and Maskless Process for Formation of Highly Uniform Arrays of Nanoholes and Nanopillars Wei Wu Æ Dibyendu
More informationA Novel Approach to the Layer Number-Controlled and Grain Size- Controlled Growth of High Quality Graphene for Nanoelectronics
Supporting Information A Novel Approach to the Layer Number-Controlled and Grain Size- Controlled Growth of High Quality Graphene for Nanoelectronics Tej B. Limbu 1,2, Jean C. Hernández 3, Frank Mendoza
More information