2. Point Defects. R. Krause-Rehberg
|
|
- Basil Arnold
- 5 years ago
- Views:
Transcription
1 R. Krause-Rehberg 2. Point Defects (F-center in acl) 2.1 Introduction 2.2 Classification 2.3 otation 2.4 Examples 2.5 Peculiarities in Semiconductors 2.6 Determination of Structure and Concentration 2.7 acancies in thermodynamic Equilibrium 2.8 Irradiation-induced Point Defects 2.9 Aspects of Defect Chemistry
2 2.7 acancies in thermodynamic equilibrium statistical considerations change of free enthalpy during formation of Schotty-type vacancies (.. number of atoms; W vacancy formation energy) F W T S (positive energy term can be compensated by gain of entropy) S is complete entropy gain; is calculated in the following probability to form vacancies in atoms is equal to probability to choose atoms out of atoms (numerator): G ( 1) (! + 1) (! )! The factor! in the denominator excludes those cases which differ only by the different order of pic-out of atoms. using the Boltzmann-Equation and the Stirling approximation:! S B lng B ln (! )!! ln x! xln x x RKR 2001 Structure of imperfect solids - Defect chemistry 2
3 RKR 2001 Structure of imperfect solids - Defect chemistry acancies in thermodynamic equilibrium T W B ln ] ln ) )ln( ( ln [ B S ln 0 B T T W F it follows: in thermal equilibrium: F is extreme value in the lattice: << (in real crystal / > 10 3 ) T W B exp thus: vacancies must exist in an ideal crystal at T>0! [1]
4 2.7 acancies in thermodynamic equilibrium example: T1000K and W 1 e / 10-5 T1000K and W 3 e / not detectable real example: vacancies in Au W 0.98 e, but in Si W > 3.6 e vacancy concentration is slightly larger compared to Eq. [1] further factors to be taen into account: - interaction of vacancies - influence of point defects to S - volume wor for dilatation of lattice defect density often much larger: crystal far from thermal equilibrium excess vacancies due to e.g. irradiation by fast particles also: vacancies can be quenched-in by very fast quenching quenching rate must be about 10 4 s -1, then a large fraction of thermal vacancies remain during slow warming-up: vacancies become mobile (migration energy required) RKR 2001 Structure of imperfect solids - Defect chemistry 4
5 experimental results positron annihilation detects vacancies in thermal equilibrium increase of pea height H/H 0 of angular correlation is due to increasing number of vacancies slope of Arrhenius plot gives vacancy formation enthalpy H (HU+p) only possible in metals in semiconductors: H is too large, so number of thermal vacancies is too small to be detected RKR 2001 Structure of imperfect solids - Defect chemistry 5
6 2.8 Irradiation-induced point defects Generation of defects generation often done by electron irradiation displacement energy in metals and semiconductors is about e electron threshold energy still about 500 e reason: only a small fraction of electron energy can be transferred to atom (collision law) maximum transfer during central collision: T m 4m1m ( m + m ) 2 E incident [2] computer-simulated impact of an electron (1 Me) in Cu (T m 40 e); generated vacancy is only stable when outside of spontaneous recombination volume example: m 1 m e g; m 2 m Cu g T m 4m e /m Cu E incident E incident (some relativistic corrections are required) using electrons up to several Me, mostly Frenel pairs are generated RKR 2001 Structure of imperfect solids - Defect chemistry 6
7 2.8.1 Generation of defects Ion implantation is most important doping method in semiconductor technology mass m 1 and m 2 in Eq. 2 are comparable (situation lie billiard balls) however: penetration depth for ions of 100 e is about 1 µm (1 Me electrons > 0.5mm) ions produce extended defect cascades; energy large enough for 10 4 displacement events however: only a few defects survive (stationary state reached after 1 ps) also larger point defect clusters are generated computer-simulated defect cascade in {100} plane of Cu. T250 e, t a 0.06 ps, t b 0.35 ps, t c 1.5 ps stationary result after 1.5 ps: 5 vacancies and 5 interstitials RKR 2001 Structure of imperfect solids - Defect chemistry 7
8 ion implantation important dopant species in Si are As and B in order to obtain homogenous doping depth profiles: multiple implantation steps with different energy depth distribution of implanted B (As) atoms in silicon depth distribution of displaced atoms in B-implanted Si when implantation dose large enough: lattice becomes amorphous amorphisation dose is function of ion mass, target species, and temperature RKR 2001 Structure of imperfect solids - Defect chemistry 8
9 2.8 Irradiation-induced point defects temperature dependence of amorphisation dose is strong at elevated temperature: defects anneal during irradiation at room temperature: boron implantation will not lead to amorphisation in technology: defects must be annealed often: rapid thermal annealing (RTA) in Si: 30s at 950 C done by light illumination by strong halogen lamps (few W) temperature dependence of amorphisation dose for different ions in Si RKR 2001 Structure of imperfect solids - Defect chemistry 9
10 Rutherford Bacscattering classical method to investigate ion implantation defects: Rutherford Bacscattering probe atoms (H, He) penetrate into the sample into lowindex directions (channels) defects which are present scatter the probe atoms and raise the bacscattered intensity defect depth profiles can be determined RKR 2001 Structure of imperfect solids - Defect chemistry 10
11 2.8.2 Annealing of excess point defects irradiation defects far from thermal equilibrium but still stable (frozen-in) increasing temperature: defects start migration exp E E m 0 m BT... migration energy annealing of irradiation defects in Cu electrical resistance electrical residual resistance at low temperature: sensitive for defects (electrons are scattered during movement in electric field) RKR 2001 Structure of imperfect solids - Defect chemistry 11
12 Annealing of excess point defects annealing starts at very low temperatures (in metals: interstitials have smallest migration energy) many annealing stages; during annealing: defect reaction (e.g. formation of vacancy clusters) often: several mechanisms lead to disappearance of same defect: vacancies vanish due to migration of interstitials and vacancies itself several stages (A-E) for interstitials: close Frenel pairs (A-C) and separated interstitials (D+E) curve b: electron irradiation curve : plastic deformation curve a: quenched sample stage I + II: interstitial annealing stage III: vacancy annealing isochronal annealing curve of Cu after 3- Me-electron irradiation (T irr 4.5 K) RKR 2001 Structure of imperfect solids - Defect chemistry 12
13 Annealing of excess point defects example: defects after electron irradiation in Ge (E e- 2 Me, T irr 4K) distinct annealing stage at 200K sample with highest dose: formation of divacancies during annealing (they anneal at about 400K) formation of divacancies prove: it is no movement of interstitial but vacancies this is supported by the fact that the vacancies disappear completely in this stage; interstitial stage always incomplete (Polity et al., 1997) RKR 2001 Structure of imperfect solids - Defect chemistry 13
14 Defect reactions defect reactions during annealing sequence is usual effect they could be rather complex typical example: defect annealing in Cz-Si after lowtemperature electron irradiation many different oxygen-vacancy complexes are formed most simple defect is the so-called A-center during annealing: sequence of different x O y complexes are formed defects stable up to 800 C, although a monovacancy anneals at about 200K oxygen stabilizes the defects -O complex (A-center) RKR 2001 Structure of imperfect solids - Defect chemistry 14
15 2.9 Aspects of defect chemistry chemical or defect reaction ν A A + ν B B ν reaction index : λ C C + ν ν C D + ν ν i D D ν...number of moles prior to reaction: λ 0 ; complete reaction λ 1 in thermodynamic equilibrium: 0 < λ < 1 equilibrium condition: G 0 λ, T p minimum of free entalphy reaction runs spontaneously only when: G < 0 λ, T p RKR 2001 Structure of imperfect solids - Defect chemistry 15
16 The mass action law chemical or defect reaction dc dt A dc dt 1 A + B C + 2 RKR 2001 Structure of imperfect solids - Defect chemistry 16 D i... reaction velocity coefficients c i... concentrations B C D 1 ca cb and for return reaction: 2 cc cd in case of thermodynamic equilibrium: velocity in both directions identical dc dc A C dt dt and thus: cc cd 1 c... concentration in equilibriu m i c c equation is called mass action law A not only for chemical reactions: intrinsic conductivity in semiconductors n p n + p mass action law : 0... number of all electrons and thus: n p ' B 2 dc dt dc dt
17 Defect chemistry in HgCdTe HgCdTe is used as infrared detector; dominating defect is 2- Hg (twofold ionized acceptor) vacancies are in equilibrium with vapour p Hg over crystal e + h + + 2h 0 + Hg( gas) 2 + Hg Hg Hg mass action law: electrical conductivity is sum of intrinsic conduction and ionization of Hg acceptors n h i 2 2 [ Hg ] h phg v (1) neutrality condition: intrinsic part n h (at high temperatures) n h + 2 [ 2 Hg ] 0 (2) 2 extrinsic part 2 [ Hg ] h (3) technical use at T < 100K (no intrinsic conduction); combination of (1) to (3) gives: 2 3 i phg 2 2v h77 K h77k + 2ih77K 2 p v Hg 0 (4) RKR 2001 Structure of imperfect solids - Defect chemistry 17
18 Defect chemistry in HgCdTe 2 3 i phg 2 2v h77 K h77k + 2ih77K 2 p v Hg 0 (4) is equation which defines connection between Hg partial pressure and concentration of Hg vacancies in crystal (because of h 77K 2 [ Hg ]) constants i and v were determined by electrical measurements (Hall effect) lines in figure: result of simulation by eq. (4); measured points: experimental data of Hg vacancy concentration obtained by positron annihilation RKR 2001 Structure of imperfect solids - Defect chemistry 18
19 Defect chemistry treatment of quasi-ternary compounds becomes rather difficult very large number of intrinsic defects but in special regions: only a few defects dominate calculation of the dominating defects requires the nowledge of thermodynamic constants which are usually only roughly nown diagram only valid for a constant temperature CuInSe 2 RKR 2001 Structure of imperfect solids - Defect chemistry 19
2. Point Defects. R. Krause-Rehberg
R. Krause-Rehberg 2. Point Defects (F-center in NaCl) 2.1 Introduction 2.2 Classification 2.3 Notation 2.4 Examples 2.5 Peculiarities in Semiconductors 2.6 Determination of Structure and Concentration
More informationIntroduction into Positron Annihilation
Introduction into Positron Annihilation Introduction (How to get positrons? What is special about positron annihilation?) The methods of positron annihilation (positron lifetime, Doppler broadening, ACAR...)
More informationDefect chemistry in GaAs studied by two-zone annealings under defined As vapor pressure. Outlook:
Defect chemistry in studied by two-zone annealings under defined vapor pressure V. Bondarenko 1, R. Krause-Rehberg 1, J. Gebauer 2, F. Redmann 1 1 Martin-Luther-University Halle-Wittenberg, Halle, Germany
More informationcharacterization in solids
Electrical methods for the defect characterization in solids 1. Electrical residual resistivity in metals 2. Hall effect in semiconductors 3. Deep Level Transient Spectroscopy - DLTS Electrical conductivity
More informationSemiconductor physics I. The Crystal Structure of Solids
Lecture 3 Semiconductor physics I The Crystal Structure of Solids 1 Semiconductor materials Types of solids Space lattices Atomic Bonding Imperfection and doping in SOLIDS 2 Semiconductor Semiconductors
More informationLecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations
Lecture 1 OUTLINE Basic Semiconductor Physics Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Reading: Chapter 2.1 EE105 Fall 2007 Lecture 1, Slide 1 What is a Semiconductor? Low
More informationcollisions of electrons. In semiconductor, in certain temperature ranges the conductivity increases rapidly by increasing temperature
1.9. Temperature Dependence of Semiconductor Conductivity Such dependence is one most important in semiconductor. In metals, Conductivity decreases by increasing temperature due to greater frequency of
More informationJoint ICTP-IAEA Workshop on Physics of Radiation Effect and its Simulation for Non-Metallic Condensed Matter.
2359-3 Joint ICTP-IAEA Workshop on Physics of Radiation Effect and its Simulation for Non-Metallic Condensed Matter 13-24 August 2012 Electrically active defects in semiconductors induced by radiation
More informationPositron Annihilation in Materials Science
Positron Annihilation in Materials Science R. Krause-Rehberg Universität Halle, Inst. für Physik History Techniques of Positron Annihilation Defects in Semiconductors User-dedicated Positron Facilities
More informationPositron Annihilation Spectroscopy on Defects in Semiconductors
Positron Annihilation Spectroscopy on Defects in Semiconductors R. Krause-Rehberg Universität Halle, Inst. für Physik Some historical remarks Techniques of Positron Annihilation Study of Defects in Semiconductors
More informationBasics and Means of Positron Annihilation
Basics and Means of Positron Annihilation Positron history Means of positron annihilation positron lifetime spectroscopy angular correlation Doppler-broadening spectroscopy Near-surface positron experiments:
More informationOutlook: Application of Positron Annihilation for defects investigations in thin films. Introduction to Positron Annihilation Methods
Application of Positron Annihilation for defects investigations in thin films V. Bondarenko, R. Krause-Rehberg Martin-Luther-University Halle-Wittenberg, Halle, Germany Outlook: Introduction to Positron
More informationVacancy generation during Cu diffusion in GaAs M. Elsayed PhD. Student
Vacancy generation during Cu diffusion in GaAs M. Elsayed PhD. Student Martin Luther University-FB Physik IV Halle-Wittenberg Outlines Principles of PAS vacancy in Semiconductors and shallow positron traps
More informationStudy of semiconductors with positrons. Outlook:
Study of semiconductors with positrons V. Bondarenko, R. Krause-Rehberg Martin-Luther-University Halle-Wittenberg, Halle, Germany Introduction Positron trapping into defects Methods of positron annihilation
More informationVLSI Technology Dr. Nandita Dasgupta Department of Electrical Engineering Indian Institute of Technology, Madras
VLSI Technology Dr. Nandita Dasgupta Department of Electrical Engineering Indian Institute of Technology, Madras Lecture - 20 Ion-implantation systems and damages during implantation So, in our discussion
More informationUnmanageable Defects in Proton- Irradiated Silicon: a Factual Outlook for Positron Probing N. Yu. Arutyunov 1,2, M. Elsayed 1, R.
Unmanageable Defects in Proton- Irradiated Silicon: a Factual Outlook for Positron Probing N. Yu. Arutyunov 1,2, M. Elsayed 1, R. Krause-Rehberg 1 1 Department of Physics, Martin Luther University, 06120
More informationMaterial Science using Positron Annihilation
Material Science using Positron Annihilation R. Krause-Rehberg Universität Halle, Inst. für Physik 9.3.2018 Some historical remarks Techniques of Positron Annihilation Study of Defects in Semiconductors
More informationSession 5: Solid State Physics. Charge Mobility Drift Diffusion Recombination-Generation
Session 5: Solid State Physics Charge Mobility Drift Diffusion Recombination-Generation 1 Outline A B C D E F G H I J 2 Mobile Charge Carriers in Semiconductors Three primary types of carrier action occur
More informationIon Implantation ECE723
Ion Implantation Topic covered: Process and Advantages of Ion Implantation Ion Distribution and Removal of Lattice Damage Simulation of Ion Implantation Range of Implanted Ions Ion Implantation is the
More informationLecture 7: Extrinsic semiconductors - Fermi level
Lecture 7: Extrinsic semiconductors - Fermi level Contents 1 Dopant materials 1 2 E F in extrinsic semiconductors 5 3 Temperature dependence of carrier concentration 6 3.1 Low temperature regime (T < T
More informationin Si by means of Positron Annihilation
Investigation of the Rp/2 /2-effect in Si by means of Positron Annihilation R. Krause-Rehberg, F. Börner, F. Redmann Universität Halle Martin-Luther-Universität R. Kögler, W. Skorupa Forschungszentrum
More informationIdentification of Getter Defects in high-energy self-implanted Silicon at Rp/2
Identification of Getter Defects in high-energy self-implanted Silicon at Rp R. Krause-Rehberg 1, F. Börner 1, F. Redmann 1, J. Gebauer 1, R. Kögler 2, R. Kliemann 2, W. Skorupa 2, W. Egger 3, G. Kögel
More informationIntroduction to Engineering Materials ENGR2000. Dr.Coates
Introduction to Engineering Materials ENGR2000 Chapter 18: Electrical Properties Dr.Coates 18.2 Ohm s Law V = IR where R is the resistance of the material, V is the voltage and I is the current. l R A
More informationExtrinsic Point Defects: Impurities
Extrinsic Point Defects: Impurities Substitutional and interstitial impurities Sol solutions, solubility limit Entropy of ing, eal solution model Enthalpy of ing, quasi-chemical model Ideal and regular
More information2. Thermodynamics of native point defects in GaAs
2. Thermodynamics o native point deects in The totality o point deects in a crystal comprise those existing in a perectly chemically pure crystal, so called intrinsic deects, and those associated with
More informationThe photovoltaic effect occurs in semiconductors where there are distinct valence and
How a Photovoltaic Cell Works The photovoltaic effect occurs in semiconductors where there are distinct valence and conduction bands. (There are energies at which electrons can not exist within the solid)
More informationSection 7: Diffusion. Jaeger Chapter 4. EE143 Ali Javey
Section 7: Diffusion Jaeger Chapter 4 Surface Diffusion: Dopant Sources (a) Gas Source: AsH 3, PH 3, B 2 H 6 (b) Solid Source BN Si BN Si (c) Spin-on-glass SiO 2 +dopant oxide (d) Liquid Source. Fick s
More informationKinetics. Rate of change in response to thermodynamic forces
Kinetics Rate of change in response to thermodynamic forces Deviation from local equilibrium continuous change T heat flow temperature changes µ atom flow composition changes Deviation from global equilibrium
More informationImprovement of depth resolution of VEPAS by a sputtering technique
Martin Luther University Halle Improvement of depth resolution of VEPAS by a sputtering technique R. Krause Rehberg, M. John, R. Böttger, W. Anwand and A. Wagner Martin Luther University Halle & HZDR Dresden
More informationPN Junction
P Junction 2017-05-04 Definition Power Electronics = semiconductor switches are used Analogue amplifier = high power loss 250 200 u x 150 100 u Udc i 50 0 0 50 100 150 200 250 300 350 400 i,u dc i,u u
More informationIon Implantation. alternative to diffusion for the introduction of dopants essentially a physical process, rather than chemical advantages:
Ion Implantation alternative to diffusion for the introduction of dopants essentially a physical process, rather than chemical advantages: mass separation allows wide varies of dopants dose control: diffusion
More informationElectrically active defects in semiconductors induced by radiation
Electrically active defects in semiconductors induced by radiation Ivana Capan Rudjer Boskovic Institute, Croatia http://www.irb.hr/users/capan Outline Radiation damage Capacitance transient techniques
More informationA semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced.
Semiconductor A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced. Page 2 Semiconductor materials Page 3 Energy levels
More informationElectrical Resistance
Electrical Resistance I + V _ W Material with resistivity ρ t L Resistance R V I = L ρ Wt (Unit: ohms) where ρ is the electrical resistivity 1 Adding parts/billion to parts/thousand of dopants to pure
More informationCarriers Concentration and Current in Semiconductors
Carriers Concentration and Current in Semiconductors Carrier Transport Two driving forces for carrier transport: electric field and spatial variation of the carrier concentration. Both driving forces lead
More informationEE 212 FALL ION IMPLANTATION - Chapter 8 Basic Concepts
EE 212 FALL 1999-00 ION IMPLANTATION - Chapter 8 Basic Concepts Ion implantation is the dominant method of doping used today. In spite of creating enormous lattice damage it is favored because: Large range
More informationAtomistic simulations on the mobility of di- and tri-interstitials in Si
Atomistic simulations on the mobility of di- and tri-interstitials in Si related publications (since 2001): Posselt, M., Gao, F., Zwicker, D., Atomistic study of the migration of di- and tri-interstitials
More informationXing Sheng, 微纳光电子材料与器件工艺原理. Doping 掺杂. Xing Sheng 盛兴. Department of Electronic Engineering Tsinghua University
微纳光电子材料与器件工艺原理 Doping 掺杂 Xing Sheng 盛兴 Department of Electronic Engineering Tsinghua University xingsheng@tsinghua.edu.cn 1 Semiconductor PN Junctions Xing Sheng, EE@Tsinghua LEDs lasers detectors solar
More informationVacancy-like defects in SI GaAs: post-growth treatment
Vacancy-like defects in SI : post-growth treatment V. Bondarenko, R. Krause-Rehberg Martin-Luther-University Halle-Wittenberg, Halle, Germany B. Gruendig-Wendrock, J.R. Niklas TU Bergakademie Freiberg,
More informationSemiconductors 1. Explain different types of semiconductors in detail with necessary bond diagrams. Intrinsic semiconductors:
Semiconductors 1. Explain different types of semiconductors in detail with necessary bond diagrams. There are two types of semi conductors. 1. Intrinsic semiconductors 2. Extrinsic semiconductors Intrinsic
More informationProcessing of Semiconducting Materials Prof. Pallab Banerji Department of Metallurgy and Material Science Indian Institute of Technology, Kharagpur
Processing of Semiconducting Materials Prof. Pallab Banerji Department of Metallurgy and Material Science Indian Institute of Technology, Kharagpur Lecture - 9 Diffusion and Ion Implantation III In my
More informationSeptember 21, 2005, Wednesday
, Wednesday Doping and diffusion I Faster MOSFET requires shorter channel P + Poly Al Al Motivation Requires shallower source, drain Al P + Poly Al source drain Shorter channel length; yes, but same source
More informationNumerical Example: Carrier Concentrations
2 Numerical ample: Carrier Concentrations Donor concentration: N d = 10 15 cm -3 Thermal equilibrium electron concentration: n o N d = 10 15 cm 3 Thermal equilibrium hole concentration: 2 2 p o = n i no
More informationEECS130 Integrated Circuit Devices
EECS130 Integrated Circuit Devices Professor Ali Javey 8/30/2007 Semiconductor Fundamentals Lecture 2 Read: Chapters 1 and 2 Last Lecture: Energy Band Diagram Conduction band E c E g Band gap E v Valence
More informationn i exp E g 2kT lnn i E g 2kT
HOMEWORK #10 12.19 For intrinsic semiconductors, the intrinsic carrier concentration n i depends on temperature as follows: n i exp E g 2kT (28.35a) or taking natural logarithms, lnn i E g 2kT (12.35b)
More informationEE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors
EE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors 5. Radiation Microsensors Radiation µ-sensors convert incident radiant signals into standard electrical out put signals. Radiant Signals Classification
More informationNon-traditional methods of material properties and defect parameters measurement
Non-traditional methods of material properties and defect parameters measurement Juozas Vaitkus on behalf of a few Vilnius groups Vilnius University, Lithuania Outline: Definition of aims Photoconductivity
More informationSemiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr.
Semiconductor Devices and Circuits Fall 2003 Midterm Exam Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering Name: Mat. -Nr.: Guidelines: Duration of the Midterm: 1 hour The exam is a closed
More informationIntroduction to Semiconductor Physics. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India
Introduction to Semiconductor Physics 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India http://folk.uio.no/ravi/cmp2013 Review of Semiconductor Physics Semiconductor fundamentals
More informationECE 335: Electronic Engineering Lecture 2: Semiconductors
Faculty of Engineering ECE 335: Electronic Engineering Lecture 2: Semiconductors Agenda Intrinsic Semiconductors Extrinsic Semiconductors N-type P-type Carrier Transport Drift Diffusion Semiconductors
More informationPhotoionization of the silicon divacancy studied by positron-annihilation spectroscopy
PHYSICAL REVIEW B VOLUME 57, NUMBER 20 15 MAY 1998-II Photoionization of the silicon divacancy studied by positron-annihilation spectroscopy H. Kauppinen* and C. Corbel Institut National des Sciences et
More informationSemiconductor Physics Problems 2015
Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible
More informationION IMPLANTATION - Chapter 8 Basic Concepts
ION IMPLANTATION - Chapter 8 Basic Concepts Ion implantation is the dominant method of doping used today. In spite of creating enormous lattice damage it is favored because: Large range of doses - 1 11
More informationInteraction of ion beams with matter
Interaction of ion beams with matter Introduction Nuclear and electronic energy loss Radiation damage process Displacements by nuclear stopping Defects by electronic energy loss Defect-free irradiation
More informationarxiv:cond-mat/ v2 [cond-mat.mtrl-sci] 21 Nov 2006
Mechanisms of arsenic clustering in silicon arxiv:cond-mat/0512653v2 [cond-mat.mtrl-sci] 21 Nov 2006 F. F. Komarov Department of Physical Electronics, Belarusian State University, 1 Kurchatov Str., Minsk
More informationIon Implant Part 1. Saroj Kumar Patra, TFE4180 Semiconductor Manufacturing Technology. Norwegian University of Science and Technology ( NTNU )
1 Ion Implant Part 1 Chapter 17: Semiconductor Manufacturing Technology by M. Quirk & J. Serda Spring Semester 2014 Saroj Kumar Patra,, Norwegian University of Science and Technology ( NTNU ) 2 Objectives
More informationIntroduction into defect studies. in ceramic materials(iii) Structure, Defects and Defect Chemistry. Z. Wang. January 18, 2002
Introduction into defect studies in ceramic materials(iii) Structure, Defects and Defect Chemistry Z. Wang January 18, 2002 1. Mass, Charge and Site Balance The Schottky reactions for NaCl and MgO, respectively,
More informationSEMICONDUCTOR PHYSICS
SEMICONDUCTOR PHYSICS by Dibyendu Chowdhury Semiconductors The materials whose electrical conductivity lies between those of conductors and insulators, are known as semiconductors. Silicon Germanium Cadmium
More informationLecture 3b. Bonding Model and Dopants. Reading: (Cont d) Notes and Anderson 2 sections
Lecture 3b Bonding Model and Dopants Reading: (Cont d) Notes and Anderson 2 sections 2.3-2.7 The need for more control over carrier concentration Without help the total number of carriers (electrons and
More informationPositron Annihilation Spectroscopy - A non-destructive method for material testing -
Maik Butterling Institute of Radiation Physics http://www.hzdr.de Positron Annihilation Spectroscopy - A non-destructive method for material testing - Maik Butterling Positron Annihilation Spectroscopy
More informationLN 3 IDLE MIND SOLUTIONS
IDLE MIND SOLUTIONS 1. Let us first look in most general terms at the optical properties of solids with band gaps (E g ) of less than 4 ev, semiconductors by definition. The band gap energy (E g ) can
More informationChemistry Instrumental Analysis Lecture 8. Chem 4631
Chemistry 4631 Instrumental Analysis Lecture 8 UV to IR Components of Optical Basic components of spectroscopic instruments: stable source of radiant energy transparent container to hold sample device
More informationLecture 2. Semiconductor Physics. Sunday 4/10/2015 Semiconductor Physics 1-1
Lecture 2 Semiconductor Physics Sunday 4/10/2015 Semiconductor Physics 1-1 Outline Intrinsic bond model: electrons and holes Charge carrier generation and recombination Intrinsic semiconductor Doping:
More informationEE143 Fall 2016 Microfabrication Technologies. Evolution of Devices
EE143 Fall 2016 Microfabrication Technologies Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1-1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) 1-2 1 Why
More informationCharacterization of Irradiated Doping Profiles. Wolfgang Treberspurg, Thomas Bergauer, Marko Dragicevic, Manfred Krammer, Manfred Valentan
Characterization of Irradiated Doping Profiles, Thomas Bergauer, Marko Dragicevic, Manfred Krammer, Manfred Valentan Vienna Conference on Instrumentation (VCI) 14.02.2013 14.02.2013 2 Content: Experimental
More informationThe Semiconductor in Equilibrium
Lecture 6 Semiconductor physics IV The Semiconductor in Equilibrium Equilibrium, or thermal equilibrium No external forces such as voltages, electric fields. Magnetic fields, or temperature gradients are
More informationSemiconductor Physics fall 2012 problems
Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each
More informationSemiconductor-Detectors
Semiconductor-Detectors 1 Motivation ~ 195: Discovery that pn-- junctions can be used to detect particles. Semiconductor detectors used for energy measurements ( Germanium) Since ~ 3 years: Semiconductor
More informationECE 142: Electronic Circuits Lecture 3: Semiconductors
Faculty of Engineering ECE 142: Electronic Circuits Lecture 3: Semiconductors Agenda Intrinsic Semiconductors Extrinsic Semiconductors N-type P-type Carrier Transport Drift Diffusion Semiconductors A semiconductor
More informationChap. 11 Semiconductor Diodes
Chap. 11 Semiconductor Diodes Semiconductor diodes provide the best resolution for energy measurements, silicon based devices are generally used for charged-particles, germanium for photons. Scintillators
More informationSemiconductor Detectors
Semiconductor Detectors Summary of Last Lecture Band structure in Solids: Conduction band Conduction band thermal conductivity: E g > 5 ev Valence band Insulator Charge carrier in conductor: e - Charge
More informationDoping of Semiconductors Using Radiation Defects Produced by Irradiation with Protons and Alpha Particles
Semiconductors, Vol. 35, No. 7, 1, pp. 735 761. Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 7, 1, pp. 769 795. Original Russian Text Copyright 1 by Kozlov, Kozlovski. REVIEWS Doping
More informationChapter 1 Overview of Semiconductor Materials and Physics
Chapter 1 Overview of Semiconductor Materials and Physics Professor Paul K. Chu Conductivity / Resistivity of Insulators, Semiconductors, and Conductors Semiconductor Elements Period II III IV V VI 2 B
More information4. STRUCTURES AND DEFECTS IN CRYSTALS
53 4. STRUCTURES AND DEFECTS IN CRYSTALS 4.1 Review and Introduction In the last three introductory chapters, we discussed the difference between variability and reliability and three types reliability
More informationThe peculiarities of formation of implanted atom concentration beyond the ion range. V.I. Sugakov Institute for Nuclear Research, Kyiv, Ukraine
The peculiarities of formation of implanted atom concentration beyond the ion range V.I. Sugakov Institute for Nuclear Research, Kyiv, Ukraine Range He in Si, 10 kev Defects E z p (10 100) kev (0.01 0.1)
More informationISSUES TO ADDRESS...
Chapter 12: Electrical Properties School of Mechanical Engineering Choi, Hae-Jin Materials Science - Prof. Choi, Hae-Jin Chapter 12-1 ISSUES TO ADDRESS... How are electrical conductance and resistance
More informationSemiconductor Physics. Lecture 3
Semiconductor Physics Lecture 3 Intrinsic carrier density Intrinsic carrier density Law of mass action Valid also if we add an impurity which either donates extra electrons or holes the number of carriers
More informationEECS143 Microfabrication Technology
EECS143 Microfabrication Technology Professor Ali Javey Introduction to Materials Lecture 1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) Why Semiconductors? Conductors e.g
More informationUnit IV Semiconductors Engineering Physics
Introduction A semiconductor is a material that has a resistivity lies between that of a conductor and an insulator. The conductivity of a semiconductor material can be varied under an external electrical
More informationChapter 2. Electronics I - Semiconductors
Chapter 2 Electronics I - Semiconductors Fall 2017 talarico@gonzaga.edu 1 Charged Particles The operation of all electronic devices is based on controlling the flow of charged particles There are two type
More informationESE 372 / Spring 2013 / Lecture 5 Metal Oxide Semiconductor Field Effect Transistor
Metal Oxide Semiconductor Field Effect Transistor V G V G 1 Metal Oxide Semiconductor Field Effect Transistor We will need to understand how this current flows through Si What is electric current? 2 Back
More informationReview of Semiconductor Fundamentals
ECE 541/ME 541 Microelectronic Fabrication Techniques Review of Semiconductor Fundamentals Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Page 1 Semiconductor A semiconductor is an almost insulating material,
More informationLecture 15: Optoelectronic devices: Introduction
Lecture 15: Optoelectronic devices: Introduction Contents 1 Optical absorption 1 1.1 Absorption coefficient....................... 2 2 Optical recombination 5 3 Recombination and carrier lifetime 6 3.1
More informationApplication of positrons in materials research
Application of positrons in materials research Trapping of positrons at vacancy defects Using positrons, one can get defect information. R. Krause-Rehberg and H. S. Leipner, Positron annihilation in Semiconductors,
More informationINCREASING OF RADIATION HARDNESS OF SILICON FOR DETECTORS BY PRELIMINARY IRRADIATION.
INCREASING OF RADIATION HARDNESS OF SILICON FOR DETECTORS BY PRELIMINARY IRRADIATION. P. G. Litovchenko 1, W. Wahl 2, M.Glaser 3, L.I.Barabash 1, A. A. Groza 1, A. P. Dolgolenko 1, A.Ya.Karpenko 1, V.
More informationThe German University in Cairo. Faculty of Information Engineering & Technology Semiconductors (Elct 503) Electronics Department Fall 2014
The German University in Cairo th Electronics 5 Semester Faculty of Information Engineering & Technology Semiconductors (Elct 503) Electronics Department Fall 2014 Problem Set 3 1- a) Find the resistivity
More informationFast Monte-Carlo Simulation of Ion Implantation. Binary Collision Approximation Implementation within ATHENA
Fast Monte-Carlo Simulation of Ion Implantation Binary Collision Approximation Implementation within ATHENA Contents Simulation Challenges for Future Technologies Monte-Carlo Concepts and Models Atomic
More informationDiffusion in Extrinsic Silicon and Silicon Germanium
1 Diffusion in Extrinsic Silicon and Silicon Germanium SFR Workshop & Review November 14, 2002 Hughes Silvestri, Ian Sharp, Hartmut Bracht, and Eugene Haller Berkeley, CA 2002 GOAL: Diffusion measurements
More informationECE 250 Electronic Devices 1. Electronic Device Modeling
ECE 250 Electronic Devices 1 ECE 250 Electronic Device Modeling ECE 250 Electronic Devices 2 Introduction to Semiconductor Physics You should really take a semiconductor device physics course. We can only
More informationAtoms? All matters on earth made of atoms (made up of elements or combination of elements).
Chapter 1 Atoms? All matters on earth made of atoms (made up of elements or combination of elements). Atomic Structure Atom is the smallest particle of an element that can exist in a stable or independent
More informationAppendix 4. Appendix 4A Heat Capacity of Ideal Gases
Appendix 4 W-143 Appendix 4A Heat Capacity of Ideal Gases We can determine the heat capacity from the energy content of materials as a function of temperature. The simplest material to model is an ideal
More information1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00
1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.
More informationEE 346: Semiconductor Devices. 02/08/2017 Tewodros A. Zewde 1
EE 346: Semiconductor Devices 02/08/2017 Tewodros A. Zewde 1 DOPANT ATOMS AND ENERGY LEVELS Without help the total number of carriers (electrons and holes) is limited to 2ni. For most materials, this is
More informationLecture 3: Semiconductors and recombination. Prof Ken Durose, University of Liverpool
Lecture 3: Semiconductors and recombination Prof Ken Durose, University of Liverpool Outline semiconductors and 1. Band gap representations 2. Types of semiconductors -Adamantine semiconductors (Hume -Rothery
More informationIntroduction. Neutron Effects NSEU. Neutron Testing Basics User Requirements Conclusions
Introduction Neutron Effects Displacement Damage NSEU Total Ionizing Dose Neutron Testing Basics User Requirements Conclusions 1 Neutron Effects: Displacement Damage Neutrons lose their energy in semiconducting
More informationEXTRINSIC SEMICONDUCTOR
EXTRINSIC SEMICONDUCTOR EXTRINSIC SEMICONDUCTOR A semiconductor in which the impurity atoms are added by doping process is called Extrinsic semiconductor. The addition of impurities increases the carrier
More informationEngineering 2000 Chapter 8 Semiconductors. ENG2000: R.I. Hornsey Semi: 1
Engineering 2000 Chapter 8 Semiconductors ENG2000: R.I. Hornsey Semi: 1 Overview We need to know the electrical properties of Si To do this, we must also draw on some of the physical properties and we
More informationSemiconductor Device Physics
1 Semiconductor Device Physics Lecture 3 http://zitompul.wordpress.com 2 0 1 3 Semiconductor Device Physics 2 Three primary types of carrier action occur inside a semiconductor: Drift: charged particle
More informationModule 16. Diffusion in solids II. Lecture 16. Diffusion in solids II
Module 16 Diffusion in solids II Lecture 16 Diffusion in solids II 1 NPTEL Phase II : IIT Kharagpur : Prof. R. N. Ghosh, Dept of Metallurgical and Materials Engineering Keywords: Micro mechanisms of diffusion,
More informationElectrical Transport. Ref. Ihn Ch. 10 YC, Ch 5; BW, Chs 4 & 8
Electrical Transport Ref. Ihn Ch. 10 YC, Ch 5; BW, Chs 4 & 8 Electrical Transport The study of the transport of electrons & holes (in semiconductors) under various conditions. A broad & somewhat specialized
More information