Modelling of radiation damage in tungsten including He production
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1 Modelling of radiation damage in tungsten including He production C.S. Becquart 1, C. Domain 2 A. De Backer 1 M.F. Barthe 3 M. Hou 4, C. Ortiz 5 1 Unité Matériaux Et Techniques, UMET, UMR 8207, Villeneuve d Ascq, France 2 EDF R&D, MMC Centre des Renardières, Moret sur Loing, France 3 CEMHTI, UPR 3079, Orléans, France 4 Physique des Solides Irradiés et des Nanostructures CP234, Université Libre de Bruxelles, Bd du Triomphe, B-1050 Brussels, Belgium 5 Laboratorio Nacional de Fusión por Confinamiento Magnético, CIEMAT, E Madrid, Spain EUROPEAN FUSION TECHNOLOGY PROGRAMME: CEA Contrat V PROGRAMME INTERDISCIPLINAIRE ENERGIE DU CNRS PFMC-13, Rosenheim, may 2011 C. S. Becquart 1
2 Object Kinetic Monte Carlo: LAKIMOCA Microstructure = objects defined by: type centre-of-mass position reaction radius possible reactions PBC or surface 200nm Recombination Emission + Traps Interstitial loop Emission dislocation Vacancy cluster Interstitial cluster Annihilation + Mixed He vacancy cluster He cluster Migration PFMC-13, Rosenheim, may 2011 C. S. Becquart 2
3 Object Kinetic Monte Carlo: LAKIMOCA Microstructure = objects defined by: type centre-of-mass position reaction radius possible reactions PBC or surface Recombination Emission + Traps Interstitial loop Emission dislocation Vacancy cluster Interstitial cluster Annihilation + 200nm He cluster Mixed He vacancy cluster Migration Properties of He (and H), interactions with vacancy and vacancy clusters, with SIAs and impurities (binding and migration energies): ab initio calculations. ===> Use He desorption experiments to check. PFMC-13, Rosenheim, may 2011 C. S. Becquart 3
4 Object Kinetic Monte Carlo: LAKIMOCA Microstructure = objects defined by: type centre-of-mass position reaction radius possible reactions PBC or surface 200nm Recombination Emission + Traps Interstitial loop Emission dislocation Vacancy cluster Interstitial cluster Annihilation + Mixed He vacancy cluster He cluster Migration He, H atoms Frenkel pairs + Neutrons, ions cascade PFMC-13, Rosenheim, may 2011 C. S. Becquart 4
5 Object Kinetic Monte Carlo: LAKIMOCA Microstructure = objects defined by: type centre-of-mass position reaction radius possible reactions PBC or surface Recombination Emission + Traps Interstitial loop Emission dislocation Vacancy cluster Interstitial cluster Annihilation + He, H atoms Frenkel pairs + Neutrons, ions 200nm Mixed He vacancy cluster He cluster cascade Migration Properties External events: of He He (and implantation, H), interactions damage with vacancy and vacancy clusters, with SIAs and impurities (binding and migration energies): ab initio calculations. ==> BCA code Marlowe adjusted on exp. results ===> Use He desorption experiments to check. PFMC-13, Rosenheim, may 2011 C. S. Becquart 5
6 DFT ab initio method PAW VASP (Vienna Ab initio Simulation Package) Exchange and correlation: GGA (PW91) All atomic positions relaxed Constant volume calculations Supercells with PBC. Cut off W: 350 ev. G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993); ibid. 49, (1994) G. Kresse and J. Furthmüller, Comput. Mat. Sci. 6, 15 (1996) G. Kresse and J. Furthmüller, Phys. Rev. B 55, (1996) Formation, binding and migration energies 54 atoms + 5x5x5 kpoints, 128 atoms + 3x3x3 kpoints, 250 atoms + 3x3x3 kpoints Ab initio BO MD: NVT ensemble, time step 1 fs, cutoff 350 ev and 1 kpt PFMC-13, Rosenheim, may 2011 C. S. Becquart 6
7 He desorption experiments He implantation at 5K Below threshold R R R R 1 o o ev, 2.3 ppm 250 ev, 39 ppm 400 ev, 13 ppm 400 ev, 17 ppm 400 ev, 350 ppm 1.69 kev, 4.7 ppm 3 kev, 0.28 ppm 3 kev, 3 ppm 3 kev, 12 ppm Above threshold T (K) A.S. Soltan, R. Vassen and P. Jung, J. Appl. Phys. 70(2) (1991) 793 PFMC-13, Rosenheim, may 2011 C. S. Becquart 7
8 He Ab initio Exp. (ev) Empirical potentials (ev) Octahedral [HENR04] 5.47 [WILS72] Tetrahedral [WILS72] Substitutional 4.70 Migration mig energy E He ( 3 He [AMA84]) ( 4 He [WAG79]) 0.29 [HENR04] 0.24 [WILS72] E mig (He) very low: discrepancy with exp. results. Consistent with tendency to form clusters [BEC06], agreement with Soltan [SOLT91] J. Amano and D. Seidman, J. Appl. Phys. 56 (1984) 983 A. Wagner and D.N.Seidman, Phys. Rev. Lett. 42 (1979) 515 C.S. Becquart & C. Domain, Phys. Rev. Lett. 97 (2006) A.S. Soltan, R. Vassen and P. Jung, J. Appl. Phys. 70(2) (1991) 793 PFMC-13, Rosenheim, may 2011 C. S. Becquart 8
9 He clusters Binding energy (ev) Ab initio capillary approx n (total number of He in the resulting cluster) E = for for for. ( n ( n 1) + 1) = E ( n 1) + E ( 1) E ( n) b for 3 ( E ( 2) E ( 1) )( n) 2 3 ( n 1) 2 3 / E b [ ( )] for ( 1) PFMC-13, Rosenheim, may 2011 C. S. Becquart 9
10 He clusters Small clusters are mobile Ab initio MD at 1000 K, center of mass (CM) trajectories 44 ps 82 ps 5He 10He PFMC-13, Rosenheim, may 2011 C. S. Becquart 10
11 2He 150 K : 103 ps 300 K : 105 ps 300 K 1000 K : 103 ps 600 K : 107 ps PFMC-13, Rosenheim, may 2011 C. S. Becquart 11
12 8 MSD ( 2 ) K 150 K 2He He MSD ( 2 ) K 300 K 2He He t (ps) 10 3He t (ps) 10 Center of Mass MSD MSD ( 2 ) t (ps) 600 K 2He He 3He 0 5 t (ps) 10 Emig He ~ 0.04 ev Emig 2He (1D) ~ ev Emig 3He ~ 0.07 ev PFMC-13, Rosenheim, may 2011 C. S. Becquart 12
13 External events: MARLOWE parameterized on exp. results Number of pairs W -> W Poly 29/9/08 PAPA1:/home/mhou/W PSIPC6:mhou-FP7-He-Frenkel_pairs_and_ranges-WW-WNEW Seidman 1.18 a Separation distance (lu) 5 KeV 10 KeV 20 KeV 30 KeV 40 KeV 50 KeV 60 KeV 70 KeV D. Pramanik and D. N. Seidman, Jour. Appl. Phys. 54 (1983) 6352; D. N. Seidman, R. S. Averback, and R. Benedek, Phys. Stat. Solidi (b) 144 (1987) 85. M. Hou, C. J. Ortiz, C.S. Becquart, C. Domain, U. Sarkar, A. Debacker, J. Nucl. Mater. 403 (2010) 89. PFMC-13, Rosenheim, may 2011 C. S. Becquart 13
14 Check parameterization: OKMC simulations of He desorption Two steps: -implantation in l.u. box Exp. rate = s -1 m -2 ==> 16 He per s PBC in two directions: thin foil nm thick. Surface perpendicular to 001 direction -isochronal annealing T increase of 2K every 60 s Monitor the total number of defects (not objects) in the box C.S. Becquart, C. Domain, U. Sarkar, A. DeBacker, M. Hou, accepted in J. Nucl. Mater. 403 (2010) 75. PFMC-13, Rosenheim, may 2011 C. S. Becquart 14
15 OKMC simulations of He desorption implanted «under threshold» Normalized number of He Random He Experimental data Marlowe polycrystal Temperature (K) Normalized number of He Exp: 400 ev He, 13 ppm He and 350 ppm He Random He Marlowe polycrystal Experimental data Temperature (K) - Relevance of He distribution PFMC-13, Rosenheim, may 2011 C. S. Becquart 15
16 Mean spatial distribution of He at the end of implantation Number of He Marlowe polycrystal Random He Number of He Marlowe polycrystal Random He Distance from the surface in lattice units Number of He in the cluster Exp: 350 ppm 400 ev He PFMC-13, Rosenheim, may 2011 C. S. Becquart 16
17 Normalized number of He Marlowe poly, previous Marlowe poly, new Experimental data Temperature (K) Migration of small He clusters Role of impurities Exp: 350 ppm 400 ev He PFMC-13, Rosenheim, may 2011 C. S. Becquart 17
18 Role of impurities (ab initio) E binding (ev H He C Mo Re Fe Ni 2He 3He He v SIA Most impurities trap He and small He clusters ===> potential bubble nucleation centers 128 atoms 3x3x3 kpoints PFMC-13, Rosenheim, may 2011 C. S. Becquart 18
19 Role of impurities (ab initio) E binding (ev H He C Mo Re Fe Ni 2He 3He He v SIA Most impurities trap He and small He clusters ===> potential bubble nucleation centers 128 atoms 3x3x3 kpoints PFMC-13, Rosenheim, may 2011 C. S. Becquart 19
20 Vacancy and voids VASP: divacancy unstable; not predicted by empirical potentials; agreement (now) between DFT calculations Exp: vacancy loops [BUSW70; HAUS72; RAU70] (TEM) and voids (FIM) [SEID78] formed under heavy particle irradiation. -2v stabilised by C and O [VASP] or H [Kato, ICFRM-15] -Cascade condition: all vacancies in narrow volume J.T. Buswell, Phil. Mag. 22 (1970) 391 and 787; F. Häussermann, Phil. Mag. 25 (1972) 561 and 583 ; R.C. Rau, Phil. Mag. 18 (1970) D. N. Seidman, Surf.Science 70 (1978) 532. BUT PFMC-13, Rosenheim, may 2011 C. S. Becquart 20 Binding energy (ev) Ab initio capillary approx m (total number of vacancies in the resulting cluster)
21 He. 2v + He 2He. 2v Binding energy (ev) He.6v + He 9He. 6v Stability of nhe.mv clusters He + He 16He Nbr of He nhe.mv clusters are very stable S1 S S5 Not mobile 6 S7 Nbr of v Binding energy (ev) Binding energy (ev) He + v 5He. v Nbr of He He.6v + 19He He.3v9 + He v. 6 v19 He. 4v S5 7 S Nbr of v PFMC-13, Rosenheim, may 2011 C. S. Becquart 21
22 SIA and SIA clusters SIA very mobile: ev ; 1D motion with Erot = 0.38 ev [DERL07] Binding energy (ev) Ab initio capillary approx Number of SIAs in resulting cluster SIA clusters very stable and also very mobile [DUDA08] P.M. Derlet, D. Nguyen-Manh and S.L. Dudarev, Phys. Rev. B 76 (2007) S. L. Dudarev, C.R. Physique 9 (2008) 409. PFMC-13, Rosenheim, may 2011 C. S. Becquart 22
23 1 M-Polycrystal Normalized number of defects and He M-Amorphous Experiment better reproduced when W is considered as a polycrystal 12 ppm 3 kev He 0.6 Experimental data Temperature (K) - Relevance of the choice of matrix structure on He and primary damage distribution and on longer term evolution. PFMC-13, Rosenheim, may 2011 C. S. Becquart 23
24 Influence of He atoms in the void formation of 800 kev 3 He implanted in tungsten Exp. results of P.E. Lhuilier PhD thesis CEMHTI Orléans: the higher the fluence, the smaller the voids in the track region 1/ Implantationstage done at 300 K with experimental flux and fluences (10 14, 10 15, and ions per cm 2 ). 2/ Isochronal annealing stage : T = 10 K every 3600 s up to 900 K.. PFMC-13, Rosenheim, may 2011 C. S. Becquart 24
25 a 800 kev 3 He atom produces on average 33 FP (Marlowe) Track region Box size: a 0 = nm; track region: 3.75 % of the He atoms and 25.4 % of the point defects: 221 FP per He atom PFMC-13, Rosenheim, may 2011 C. S. Becquart 25
26 RT implantation ==> SIA and nhe clusters are mobile: annihilation, desorption... surface Fluence increases surface Defect population after implantation stage: v, mv, nhe.psia, He.v, nhe.v PFMC-13, Rosenheim, may 2011 C. S. Becquart 26
27 RT implantation ==> SIA and nhe clusters are mobile: annihilation, desorption... surface Fluence increases surface non mobile Defect population after implantation stage: v, mv, nhe.psia, He.v, nhe.v PFMC-13, Rosenheim, may 2011 C. S. Becquart 27
28 End of implantation sequence (PAS) Good agreement with exp. data PFMC-13, Rosenheim, may 2011 C. S. Becquart 28
29 During the isochronal annealing, v start moving, small mv clusters emit ion/cm -2 concentration cm -3 SIA He v v clusters (mv, nhe.mv) PFMC-13, Rosenheim, may 2011 C. S. Becquart 29
30 During the isochronal annealing, v start moving, small mv clusters emit Clustering phase ion/cm -2 concentration cm -3 SIA He v v clusters (mv, nhe.mv) PFMC-13, Rosenheim, may 2011 C. S. Becquart 30
31 Clustering T range depends on fluence. Amount of desorption, annihilation and clustering also At 900K PFMC-13, Rosenheim, may 2011 C. S. Becquart 31
32 Vacancy cluster distribution at 900 K Nbr of clusters ion/cm Nbr of v in cluster The higher the fluence, the smaller the v clusters as observed experimentally PFMC-13, Rosenheim, may 2011 C. S. Becquart 32
33 Cluster distribution at the end of the implantation PFMC-13, Rosenheim, may 2011 C. S. Becquart 33
34 Cluster distribution at the end of the implantation Free vacancies PFMC-13, Rosenheim, may 2011 C. S. Becquart 34
35 Cluster distribution at the end of the implantation Germs nhe.psia Free vacancies PFMC-13, Rosenheim, may 2011 C. S. Becquart 35
36 At high fluence, it is easier to form clusters because the vacancies have less distance to cover. Furthermore, there are more germs and less desorption. Free vacancies / «germs» At the end of implantation sequence Fluence (ions cm -2 ) «germs» = non mobile clusters = nv.mhe + nsia.mhe Without He, not the same trends anymore PFMC-13, Rosenheim, may 2011 C. S. Becquart 36
37 Conclusions ==> Ab initio calculations: - He is very mobile - small He clusters are mobile, 2He clusters perform 1D motion at low T. - He and He clusters bind to almost everything - di-vacancy is unstable - vacancies stabilise He clusters ==> OKMC model parameterized on ab initio data and exp.: - relevance of implantation model - need more information on mobility of He clusters; trap mutation OKMC model can help interpret experimental results and vice versa PFMC-13, Rosenheim, may 2011 C. S. Becquart 37
J. Boisse 1,2, A. De Backer 1,3, C. Domain 4,5, C.S. Becquart 1,4
MODELLING SELF TRAPPING AND TRAP MUTATION IN TUNGSTEN USING DFT AND MOLECULAR DYNAMICS WITH AN EMPIRICAL POTENTIAL BASED ON DFT J. Boisse 1,2, A. De Backer 1,3, C. Domain 4,5, C.S. Becquart 1,4 1 Unité
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